CN113382487A - Electrode structure for transparent semiconductor nano electrothermal film and preparation process - Google Patents
Electrode structure for transparent semiconductor nano electrothermal film and preparation process Download PDFInfo
- Publication number
- CN113382487A CN113382487A CN202110638268.8A CN202110638268A CN113382487A CN 113382487 A CN113382487 A CN 113382487A CN 202110638268 A CN202110638268 A CN 202110638268A CN 113382487 A CN113382487 A CN 113382487A
- Authority
- CN
- China
- Prior art keywords
- electrode
- electrothermal film
- silk
- semiconductor nano
- transparent semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/03—Electrodes
Abstract
The invention relates to a manufacturing process of an electrode structure for a transparent semiconductor nano electrothermal film. According to the invention, the electrode integrated with the matrix is obtained by using the conductive silver paste in a screen printing manner, the structure of the electrode can be manufactured by using a polyester screen or a stainless steel screen, so that a more stable electrode structure with a better working effect is formed, the better working effect can be achieved by arranging various electrodes and insulating areas, more use requirements are met, the whole manufacturing process passes through the stages of screen printing of the electrode, preheating and drying, high-temperature sintering and air-cooling, the operation is more convenient, the processing effect is better, and the electrode structure is more stable.
Description
Technical Field
The invention relates to the technical field of electrodes for electrothermal films, in particular to an electrode structure for a transparent semiconductor nano electrothermal film and a preparation process thereof.
Background
The transparent semiconductor nano electrothermal film is a new generation of heating material. The heating mode of the heating wire is different from that of the traditional metal resistance wire. The high-voltage direct current power supply has zero inductive reactance, generates heat by a pure resistor, can accept 1V-1000V voltage input, does not divide a power supply into positive and negative, and can be used by alternating current and direct current. And the traditional linear heating form is broken through by surface heating, the heat transfer effect is good, the electric heat conversion efficiency is high: 80% -97%, has better energy-saving advantage. The coating has the physicochemical properties of acid and alkali corrosion resistance, oxidation resistance, flame retardance, moisture resistance, high film hardness, no toxicity, no harmful radiation, no pollution and the like, and the film can be damaged only by polishing with hardness higher than that of carborundum.
The electrodes of the transparent semiconductor nano electrothermal film are divided into a high-temperature electrode and a low-temperature electrode according to the heating temperature of the coating matrix. The high-temperature electrode is also called a silver paste electrode, and the manufacturing process of the electrode is the crystallization process of silver paste and a matrix. The electrode electrifying condition is harsh, so the process for manufacturing the silver paste electrode also needs to be very accurate and fine. The silver paste electrode can resist the high temperature of more than 600 ℃, and has a series of excellent physicochemical properties of high temperature resistance, difficult oxidation, difficult abrasion, high conductivity, humidity resistance, certain acid and alkali resistance and the like.
Disclosure of Invention
In view of the problems in the prior art, the invention discloses an electrode structure for a transparent semiconductor nano electrothermal film, which adopts the technical scheme that a layer of electrothermal film is plated on the upper surface of a base body, electrodes are fixedly connected to the upper surface of the electrothermal film on the base body and are parallel to each other, a lead is electrically connected to each electrode, the edges of the electrothermal film are processed to expose out of the base body to form an insulating area, the insulating area is mainly used for cutting off the conduction of the electrothermal film, and the electrothermal film around the base body is prevented from contacting other electrical equipment to generate electric leakage.
As a preferable scheme of the present invention, the substrate is made of one of glass, ceramic and metal, the insulating region is processed by one of sand blasting, laser or chemical etching, and the electric heating film in a designated area on the substrate is removed by processing, so as to form the insulating region.
As a preferable scheme of the invention, two electrodes are arranged and are respectively positioned at two sides of the electric heating film, the insulating area surrounds the peripheral edge of the electric heating film, and the side connecting plate is positioned at the corresponding position of the insulating area.
According to a preferable scheme of the invention, two electrodes are arranged and are respectively positioned at two sides of the electric heating film, a side connecting plate extends from the edge of the middle part of each electrode, the side connecting plates and the electrodes are integrally formed, the conducting wire is fixedly connected to the side connecting plates, and the insulating area surrounds the peripheral edge of the electric heating film.
As a preferable scheme of the present invention, two of the electrodes are respectively located at two sides of the electric heating film, the insulating region is located at an edge of one side of the electric heating film, other edges of the electric heating film are flush with an edge of the base body, one end of the electrode extends to the insulating region, and the wire is fixedly connected to one end of the electrode located at the insulating region.
As a preferable scheme of the present invention, three electrodes are provided and are respectively located at two sides and a middle position of the electric heating film, the insulating region is located at an edge position of one side of the electric heating film, other edges of the electric heating film are flush with an edge of the base body, one end of the electrode extends to the insulating region, and the wire is fixedly connected to one end of the electrode located at the insulating region. The number of electrodes can be increased to four depending on the power requirements on the substrate, and the power can be increased.
A manufacturing process of an electrode structure for a transparent semiconductor nano electrothermal film is characterized by comprising the following steps: the method comprises the following steps:
the method comprises the following steps: stirring the conductive silver paste, fully stirring the conductive silver paste for 10-15 minutes until no bubbles emerge in the stirring process;
step two: silk-screen printing electrodes, namely, silk-screen printing conductive silver paste on the substrate coated with the electrothermal film by an automatic silk-screen printing machine to form the electrodes, wherein the silk-screen printing thickness is 10-13 mu m;
step three: preheating and drying, namely conveying the heated matrix after silk-screen printing to a preheating drying tunnel, wherein the temperature in the preheating drying tunnel is 130 ℃ and 250 ℃, and the preheating time is 7-10 minutes;
step four: high-temperature sintering, namely putting the preheated and dried substrate into a sintering furnace, wherein the temperature of the sintering furnace is 550-700 ℃, and performing high-temperature sintering for 7-10 minutes to crystallize the electrode and the substrate into a whole;
step five: and air cooling, namely conveying the substrate subjected to high-temperature sintering to an air cooling device, so that the substrate is rapidly cooled to about thirty ℃ in a short time, and hands can be directly contacted for carrying.
As a preferred scheme of the invention, the structure of the electrode in the second step is made by one of a polyester wire mesh or a stainless steel wire mesh, the polyester wire mesh and the stainless steel wire mesh are selected from 100 meshes and 250 meshes, the mesh number of the silk screen affects the thickness of the electrode, the thickness of the electrode affects the magnitude of voltage and current borne by the electrode, and the selection of the thickness of the electrode needs to be judged according to the power magnitude of the transparent semiconductor nano electrothermal film.
As a preferred scheme of the invention, the screen printing position of the motor board in the second step must be accurate and uniform, if the screen printing position has deviation or is broken, and the conditions such as overflow and the like are unqualified, the motor board needs to be erased by using silver paste diluent for screen printing again.
As a preferable scheme of the invention, in the preheating and drying stage of the third step, the temperature of the preheating drying tunnel cannot be too high, and the time cannot be too short, otherwise, the auxiliary agent in the electrode is easy to rapidly evaporate and foam in a rapid high-temperature environment, so that the electrode is not uniform, the stability of the electric conduction is affected, and the short circuit phenomenon is easily caused. If the temperature of the preheating drying channel is too low, the auxiliary agent of the silver paste cannot be completely dried, and the phenomenon of rapid evaporation and foaming is caused in the subsequent high-temperature sintering stage.
As a preferred scheme of the invention, in the high-temperature sintering stage of the fourth step, the sintering temperature is not too low or too short, otherwise, the temperature node of the crystallization of the transparent semiconductor nano electrothermal film substrate after silver paste coating cannot be reached, the silver paste is covered on the substrate in a loose and porous structure under the condition that the silver paste and the substrate are not completely crystallized, the phenomena of silver paste oxidation and short circuit are easily caused under the condition of long-time electrification, and finally, the transparent semiconductor nano electrothermal film is burnt, so that the product quality is greatly influenced.
The invention has the beneficial effects that: according to the invention, the electrode integrated with the matrix is obtained by using the conductive silver paste in a screen printing manner, the structure of the electrode can be manufactured by using a polyester screen or a stainless steel screen, so that a more stable electrode structure with a better working effect is formed, the better working effect can be achieved by arranging various electrodes and insulating areas, more use requirements are met, the whole manufacturing process passes through the stages of screen printing of the electrode, preheating and drying, high-temperature sintering and air-cooling, the operation is more convenient, the processing effect is better, and the electrode structure is more stable.
Drawings
Fig. 1 is a schematic view of an electrode structure of embodiment 1 of the present invention;
FIG. 2 is a schematic view of an electrode structure according to example 2 of the present invention;
FIG. 3 is a schematic diagram of an electrode structure according to embodiment 3 of the present invention
Fig. 4 is a schematic view of an electrode structure in embodiment 4 of the present invention.
In the figure: 1 basal body, 2 electrothermal films, 3 electrodes, 301 side connecting plates, 4 insulating regions and 5 conducting wires.
Detailed Description
Example 1
As shown in fig. 1, the electrode structure for the transparent semiconductor nano electrothermal film adopts the technical scheme that a layer of electrothermal film 2 is plated on the upper surface of a base body 1, electrodes 3 are fixedly connected to the upper surface of the electrothermal film 2 on the base body 1, the electrodes 3 are parallel to each other, a lead 5 is electrically connected to the electrodes 3, the edges of the electrothermal film 2 are processed to expose the base body 1 to form an insulating area 4, the insulating area 4 is mainly used for cutting off the conduction of the electrothermal film 2, and the phenomenon that the electrothermal film 2 around the base body 1 is contacted with other electrical equipment to generate electric leakage is avoided; the base body 1 is made of one of glass, ceramic and metal, the insulating area 4 is processed in one of sand blasting, laser or chemical corrosion, and the electric heating film 2 in the designated area on the base body 1 is removed through processing, so that the insulating area 4 is formed.
The two electrodes 3 are respectively positioned on two sides of the electrothermal film 2, and the insulating area 4 surrounds the peripheral edge of the electrothermal film 2.
A manufacturing process of an electrode structure for a transparent semiconductor nano electrothermal film is characterized by comprising the following steps: the method comprises the following steps:
the method comprises the following steps: stirring the conductive silver paste, fully stirring the conductive silver paste for 10 minutes until no bubbles emerge in the stirring process;
step two: silk-screen printing electrodes, namely, silk-screen printing conductive silver paste on the substrate 1 coated with the electrothermal film 2 by an automatic silk-screen printing machine to form electrodes 3, wherein the silk-screen printing thickness is 10 microns;
step three: preheating and drying, namely conveying the heated matrix 1 after silk-screen printing into a preheating drying tunnel, wherein the temperature in the preheating drying tunnel is 130 ℃, and the preheating time is 7 minutes;
step four: high-temperature sintering, namely putting the preheated and dried substrate 1 into a sintering furnace, wherein the temperature of the sintering furnace is 550 ℃, and performing high-temperature sintering for 7 minutes to crystallize the electrode 3 and the substrate 1 into a whole;
step five: and air cooling, namely conveying the substrate subjected to high-temperature sintering to an air cooling device, so that the substrate is rapidly cooled to about thirty ℃ in a short time, and hands can be directly contacted for carrying.
The structure of the electrode 3 in the second step is made through one of a polyester silk screen or a stainless steel wire screen, the polyester silk screen and the stainless steel wire screen are selected to be 100 meshes, the mesh number of silk screens influences the thickness of the electrode, the thickness of the electrode influences the magnitude of voltage and current borne by the electrode, and the thickness of the electrode needs to be selected according to the power of the transparent semiconductor nano electrothermal film; and step two, the silk-screen position of the motor plate 3 must be accurate and uniform, if the silk-screen position has deviation or is broken, the conditions of overflow and the like are unqualified, and the motor plate needs to be erased by silver paste diluent for silk-screen printing again. In the preheating and drying stage of the third step, the temperature of the preheating and drying channel cannot be too high, and the time cannot be too short, otherwise, the auxiliary agent in the electrode is easy to quickly evaporate and foam in a quick high-temperature environment, so that the electrode is not uniform, the stability of electric conduction is affected, and the short circuit phenomenon is easy to cause. If the temperature of the preheating drying channel is too low, the auxiliary agent of the silver paste cannot be completely dried, and the phenomenon of rapid evaporation and foaming is caused in the subsequent high-temperature sintering stage. And in the high-temperature sintering stage of the fourth step, the sintering temperature is not too low or too short, otherwise, the temperature node of the transparent semiconductor nano electrothermal film substrate after silver paste coating cannot be reached, the silver paste is in a loose and porous structure covering the substrate under the condition that the silver paste and the substrate are not completely crystallized, the phenomena of silver paste oxidation and short circuit are easily caused under the condition of long-time electrification, the transparent semiconductor nano electrothermal film is finally burnt, and the product quality is greatly influenced.
Example 2
As shown in fig. 2, the electrode structure for the transparent semiconductor nano electrothermal film adopts the technical scheme that a layer of electrothermal film 2 is plated on the upper surface of a base body 1, electrodes 3 are fixedly connected to the upper surface of the electrothermal film 2 on the base body 1, the electrodes 3 are parallel to each other, a lead 5 is electrically connected to the electrodes 3, the edges of the electrothermal film 2 are processed to expose the base body 1 to form an insulating area 4, the insulating area 4 is mainly used for cutting off the conduction of the electrothermal film 2, and the phenomenon that the electrothermal film 2 around the base body 1 is contacted with other electrical equipment to generate electric leakage is avoided; the base body 1 is made of one of glass, ceramic and metal, the insulating area 4 is processed in one of sand blasting, laser or chemical corrosion, and the electric heating film 2 in the designated area on the base body 1 is removed through processing, so that the insulating area 4 is formed.
The electrode 3 has two and is located respectively 2 both sides of electric heat membrane, 3 middle part edges of electrode extend there is side connecting plate 301, side connecting plate 301 with electrode 3 is integrated into one piece, wire 5 fixed connection is in on the side connecting plate 301, insulating zone 4 surrounds 2 all around edge positions of electric heat membrane, side connecting plate 301 is located insulating zone 4 corresponds the position. Lead out the wiring position through side connecting plate 301, can make the wiring position apart from the regional far away that generates heat, side connecting plate 301 is located insulating zone 4 departments, does not have the electrothermal film 2 and generates heat to the temperature rise value that makes the wiring position is lower than the regional of generating heat relatively, avoids the high temperature and makes the welding point between wire 5 and the electrode 3 melt the pine and take off.
A manufacturing process of an electrode structure for a transparent semiconductor nano electrothermal film is characterized by comprising the following steps: the method comprises the following steps:
the method comprises the following steps: stirring the conductive silver paste, fully stirring the conductive silver paste for 11 minutes until no bubbles emerge in the stirring process;
step two: silk-screen printing electrodes, namely, silk-screen printing conductive silver paste on the substrate 1 coated with the electrothermal film 2 by an automatic silk-screen printing machine to form electrodes 3, wherein the silk-screen printing thickness is 11 microns;
step three: preheating and drying, namely conveying the heated matrix 1 after silk-screen printing into a preheating drying tunnel, wherein the temperature in the preheating drying tunnel is 170 ℃, and the preheating time is 8 minutes;
step four: high-temperature sintering, namely putting the preheated and dried substrate 1 into a sintering furnace, wherein the temperature of the sintering furnace is 600 ℃, and performing high-temperature sintering for 8 minutes to crystallize the electrode 3 and the substrate 1 into a whole;
step five: and air cooling, namely conveying the substrate subjected to high-temperature sintering to an air cooling device, so that the substrate is rapidly cooled to about thirty ℃ in a short time, and hands can be directly contacted for carrying.
The structure of the electrode 3 in the second step is made through one of a polyester silk screen or a stainless steel wire screen, the polyester silk screen and the stainless steel wire screen are 150 meshes, the mesh number of silk screen printing influences the thickness of the electrode, the thickness of the electrode influences the magnitude of voltage and current borne by the electrode, and the thickness of the electrode needs to be selected according to the power of the transparent semiconductor nano electrothermal film; and step two, the silk-screen position of the motor plate 3 must be accurate and uniform, if the silk-screen position has deviation or is broken, the conditions of overflow and the like are unqualified, and the motor plate needs to be erased by silver paste diluent for silk-screen printing again. In the preheating and drying stage of the third step, the temperature of the preheating and drying channel cannot be too high, and the time cannot be too short, otherwise, the auxiliary agent in the electrode is easy to quickly evaporate and foam in a quick high-temperature environment, so that the electrode is not uniform, the stability of electric conduction is affected, and the short circuit phenomenon is easy to cause. If the temperature of the preheating drying channel is too low, the auxiliary agent of the silver paste cannot be completely dried, and the phenomenon of rapid evaporation and foaming is caused in the subsequent high-temperature sintering stage. And in the high-temperature sintering stage of the fourth step, the sintering temperature is not too low or too short, otherwise, the temperature node of the transparent semiconductor nano electrothermal film substrate after silver paste coating cannot be reached, the silver paste is in a loose and porous structure covering the substrate under the condition that the silver paste and the substrate are not completely crystallized, the phenomena of silver paste oxidation and short circuit are easily caused under the condition of long-time electrification, the transparent semiconductor nano electrothermal film is finally burnt, and the product quality is greatly influenced.
Example 3
As shown in fig. 3, the electrode structure for the transparent semiconductor nano electrothermal film adopts the technical scheme that a layer of electrothermal film 2 is plated on the upper surface of a base body 1, electrodes 3 are fixedly connected to the upper surface of the electrothermal film 2 on the base body 1, the electrodes 3 are parallel to each other, a lead 5 is electrically connected to the electrodes 3, the edges of the electrothermal film 2 are processed to expose the base body 1 to form an insulating area 4, the insulating area 4 is mainly used for cutting off the conduction of the electrothermal film 2, and the phenomenon that the electrothermal film 2 around the base body 1 is contacted with other electrical equipment to generate electric leakage is avoided; the base body 1 is made of one of glass, ceramic and metal, the insulating area 4 is processed in one of sand blasting, laser or chemical corrosion, and the electric heating film 2 in the designated area on the base body 1 is removed through processing, so that the insulating area 4 is formed.
A manufacturing process of an electrode structure for a transparent semiconductor nano electrothermal film is characterized by comprising the following steps: the method comprises the following steps:
the method comprises the following steps: stirring the conductive silver paste, fully stirring the conductive silver paste for 13 minutes until no bubbles emerge in the stirring process;
step two: silk-screen printing electrodes, namely, silk-screen printing conductive silver paste on the substrate 1 coated with the electrothermal film 2 by an automatic silk-screen printing machine to form electrodes 3, wherein the silk-screen printing thickness is 12 microns;
step three: preheating and drying, namely conveying the heated matrix 1 after silk-screen printing into a preheating drying tunnel, wherein the temperature in the preheating drying tunnel is 210 ℃, and the preheating time is 9 minutes;
step four: high-temperature sintering, namely putting the preheated and dried substrate 1 into a sintering furnace, wherein the temperature of the sintering furnace is 650 ℃, and performing high-temperature sintering for 9 minutes to crystallize the electrode 3 and the substrate 1 into a whole;
step five: and air cooling, namely conveying the substrate subjected to high-temperature sintering to an air cooling device, so that the substrate is rapidly cooled to about thirty ℃ in a short time, and hands can be directly contacted for carrying.
The structure of the electrode 3 in the second step is made of one of a polyester silk screen or a stainless steel wire screen, the polyester silk screen and the stainless steel wire screen are 200 meshes, the mesh number of silk screen printing influences the thickness of the electrode, the thickness of the electrode influences the magnitude of voltage and current borne by the electrode, and the thickness of the electrode needs to be selected according to the power of the transparent semiconductor nano electrothermal film; and step two, the silk-screen position of the motor plate 3 must be accurate and uniform, if the silk-screen position has deviation or is broken, the conditions of overflow and the like are unqualified, and the motor plate needs to be erased by silver paste diluent for silk-screen printing again. In the preheating and drying stage of the third step, the temperature of the preheating and drying channel cannot be too high, and the time cannot be too short, otherwise, the auxiliary agent in the electrode is easy to quickly evaporate and foam in a quick high-temperature environment, so that the electrode is not uniform, the stability of electric conduction is affected, and the short circuit phenomenon is easy to cause. If the temperature of the preheating drying channel is too low, the auxiliary agent of the silver paste cannot be completely dried, and the phenomenon of rapid evaporation and foaming is caused in the subsequent high-temperature sintering stage. And in the high-temperature sintering stage of the fourth step, the sintering temperature is not too low or too short, otherwise, the temperature node of the transparent semiconductor nano electrothermal film substrate after silver paste coating cannot be reached, the silver paste is in a loose and porous structure covering the substrate under the condition that the silver paste and the substrate are not completely crystallized, the phenomena of silver paste oxidation and short circuit are easily caused under the condition of long-time electrification, the transparent semiconductor nano electrothermal film is finally burnt, and the product quality is greatly influenced.
Example 4
As shown in fig. 4, the electrode structure for the transparent semiconductor nano electrothermal film adopts the technical scheme that a layer of electrothermal film 2 is plated on the upper surface of a base body 1, electrodes 3 are fixedly connected to the upper surface of the electrothermal film 2 on the base body 1, the electrodes 3 are parallel to each other, a lead 5 is electrically connected to the electrodes 3, the edges of the electrothermal film 2 are processed to expose the base body 1 to form an insulating region 4, the insulating region 4 mainly cuts off the conduction of the electrothermal film 2, and the phenomenon that the electrothermal film 2 around the base body 1 contacts other electrical equipment to generate electric leakage is avoided; the base body 1 is made of one of glass, ceramic and metal, the insulating area 4 is processed in one of sand blasting, laser or chemical corrosion, and the electric heating film 2 in the designated area on the base body 1 is removed through processing, so that the insulating area 4 is formed.
According to the power requirement of the electrothermal film 2, the number of the electrodes 3 can be increased to four, so that the power can be further improved. The power is increased by 4 times when three electrodes 3 are provided and by 8 times when four electrodes 3 are provided. This design results in a very high economic benefit. The required electric heating film power is higher, the film coating power can be reduced during film coating, and then the low power of the original film coating is doubled to 4 times or 8 times of the original low power according to the high power requirement of a customer by the electrode design method.
A manufacturing process of an electrode structure for a transparent semiconductor nano electrothermal film is characterized by comprising the following steps: the method comprises the following steps:
the method comprises the following steps: stirring the conductive silver paste, fully stirring the conductive silver paste for 15 minutes until no bubbles emerge in the stirring process;
step two: silk-screen printing electrodes, namely, silk-screen printing conductive silver paste on the substrate 1 coated with the electrothermal film 2 by an automatic silk-screen printing machine to form electrodes 3, wherein the silk-screen printing thickness is 13 mu m;
step three: preheating and drying, namely conveying the heated matrix 1 after silk-screen printing into a preheating drying tunnel, wherein the temperature in the preheating drying tunnel is 250 ℃, and the preheating time is 10 minutes;
step four: high-temperature sintering, namely putting the preheated and dried substrate 1 into a sintering furnace, wherein the temperature of the sintering furnace is 700 ℃, and performing high-temperature sintering for 10 minutes to crystallize the electrode 3 and the substrate 1 into a whole;
step five: and air cooling, namely conveying the substrate subjected to high-temperature sintering to an air cooling device, so that the substrate is rapidly cooled to about thirty ℃ in a short time, and hands can be directly contacted for carrying.
The structure of the electrode 3 in the second step is made through one of a polyester silk screen or a stainless steel wire screen, the polyester silk screen and the stainless steel wire screen are 250 meshes, the mesh number of silk screen printing influences the thickness of the electrode, the thickness of the electrode influences the magnitude of voltage and current borne by the electrode, and the thickness of the electrode needs to be selected according to the power of the transparent semiconductor nano electrothermal film; and step two, the silk-screen position of the motor plate 3 must be accurate and uniform, if the silk-screen position has deviation or is broken, the conditions of overflow and the like are unqualified, and the motor plate needs to be erased by silver paste diluent for silk-screen printing again. In the preheating and drying stage of the third step, the temperature of the preheating and drying channel cannot be too high, and the time cannot be too short, otherwise, the auxiliary agent in the electrode is easy to quickly evaporate and foam in a quick high-temperature environment, so that the electrode is not uniform, the stability of electric conduction is affected, and the short circuit phenomenon is easy to cause. If the temperature of the preheating drying channel is too low, the auxiliary agent of the silver paste cannot be completely dried, and the phenomenon of rapid evaporation and foaming is caused in the subsequent high-temperature sintering stage. And in the high-temperature sintering stage of the fourth step, the sintering temperature is not too low or too short, otherwise, the temperature node of the transparent semiconductor nano electrothermal film substrate after silver paste coating cannot be reached, the silver paste is in a loose and porous structure covering the substrate under the condition that the silver paste and the substrate are not completely crystallized, the phenomena of silver paste oxidation and short circuit are easily caused under the condition of long-time electrification, the transparent semiconductor nano electrothermal film is finally burnt, and the product quality is greatly influenced.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing and simplifying the description, but do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore are not to be construed as limiting the invention, and further, the terms "first", "second", etc., are used only for descriptive purposes and are not intended to indicate or imply relative importance or to implicitly indicate the number of technical features indicated, whereby the features defined as "first", "second", etc., may explicitly or implicitly include one or more of such features, in the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; the two elements may be directly connected or indirectly connected through an intermediate medium, and the two elements may be communicated with each other, and the specific meaning of the above terms in the present invention will be understood by those skilled in the art through specific situations.
Components and circuit connections not described in detail herein are prior art.
Although the present invention has been described in detail with reference to the specific embodiments, the present invention is not limited to the above embodiments, and various changes and modifications without inventive changes may be made within the knowledge of those skilled in the art without departing from the spirit of the present invention.
Claims (9)
1. An electrode structure for a transparent semiconductor nano electrothermal film is characterized in that: including base member (1), base member (1) upper surface has plated one deck electric heat membrane (2), electric heat membrane (2) upper surface is in fixedly connected with electrode (3) on base member (1), be parallel to each other between electrode (3), electric connection has wire (5) on electrode (3), electric heat membrane (2) edge is exposed through the processing base member (1) forms insulating area (4).
2. The electrode structure for the transparent semiconductor nano electrothermal film according to claim 1, wherein: the base body (1) is made of one of glass, ceramic and metal, and the insulating region (4) is processed by one of sand blasting, laser or chemical corrosion.
3. The electrode structure for the transparent semiconductor nano electrothermal film according to claim 1, wherein: the two electrodes (3) are respectively positioned on two sides of the electrothermal film (2), and the insulating area (4) surrounds the peripheral edge of the electrothermal film (2).
4. The electrode structure for the transparent semiconductor nano electrothermal film according to claim 1, wherein: electrode (3) have two and be located respectively electric heat membrane (2) both sides, electrode (3) middle part edge extends there is side connecting plate (301), side connecting plate (301) with electrode (3) are integrated into one piece, wire (5) fixed connection be in on the side connecting plate (301), insulating zone (4) centers on electric heat membrane (2) all around edge position, side connecting plate (301) are located insulating zone (4) correspond the position.
5. The electrode structure for the transparent semiconductor nano electrothermal film according to claim 1, wherein: electrode (3) have two and be located respectively electric heat membrane (2) both sides, insulating zone (4) are located electric heat membrane (2) one side edge position, other edges of electric heat membrane (2) with base member (1) edge flushes, electrode (3) one end extends to insulating zone (4) department, wire (5) fixed connection be in electrode (3) are located the one end of insulating zone (4) department.
6. The electrode structure for the transparent semiconductor nano electrothermal film according to claim 1, wherein: electrode (3) have three and be located respectively electric heat membrane (2) both sides and intermediate position, insulating zone (4) are located electric heat membrane (2) one side edge position, other edges of electric heat membrane (2) with base member (1) edge flushes, electrode (3) one end extends to insulating zone (4) department, wire (5) fixed connection be in electrode (3) are located the one end of insulating zone (4) department.
7. A manufacturing process of an electrode structure for a transparent semiconductor nano electrothermal film is characterized by comprising the following steps: the method comprises the following steps:
the method comprises the following steps: stirring the conductive silver paste, fully stirring the conductive silver paste for 10-15 minutes until no bubbles emerge in the stirring process;
step two: silk-screen printing electrodes, namely, silk-screen printing conductive silver paste on the substrate (1) coated with the electrothermal film (2) through an automatic silk-screen printing machine to form electrodes (3), wherein the silk-screen printing thickness is 10-13 mu m;
step three: preheating and drying, namely conveying the heated matrix (1) after silk-screen printing into a preheating drying channel, wherein the temperature in the preheating drying channel is 130-;
step four: high-temperature sintering, namely putting the preheated and dried substrate (1) into a sintering furnace, wherein the temperature of the sintering furnace is 550-700 ℃, and performing high-temperature sintering for 7-10 minutes to crystallize the electrode (3) and the substrate (1) into a whole;
step five: and air cooling, namely conveying the substrate subjected to high-temperature sintering to an air cooling device, so that the substrate is rapidly cooled to about thirty ℃ in a short time, and hands can be directly contacted for carrying.
8. The manufacturing process of the electrode structure for the transparent semiconductor nano electrothermal film according to claim 7, characterized in that: in the second step, the structure of the electrode (3) is manufactured by one of a polyester wire mesh or a stainless steel wire mesh, and the polyester wire mesh and the stainless steel wire mesh are selected from 100 meshes and 250 meshes.
9. The manufacturing process of the electrode structure for the transparent semiconductor nano electrothermal film according to claim 7, characterized in that: and secondly, the silk-screen position of the motor board (3) must be accurate and uniform, if the silk-screen position has deviation or is broken, and the conditions such as overflow are unqualified, the silk-screen position needs to be erased by silver paste diluent for silk-screen printing again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110638268.8A CN113382487A (en) | 2021-06-08 | 2021-06-08 | Electrode structure for transparent semiconductor nano electrothermal film and preparation process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110638268.8A CN113382487A (en) | 2021-06-08 | 2021-06-08 | Electrode structure for transparent semiconductor nano electrothermal film and preparation process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113382487A true CN113382487A (en) | 2021-09-10 |
Family
ID=77576596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110638268.8A Pending CN113382487A (en) | 2021-06-08 | 2021-06-08 | Electrode structure for transparent semiconductor nano electrothermal film and preparation process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113382487A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114630458A (en) * | 2022-03-14 | 2022-06-14 | 福建晶烯新材料科技有限公司 | Manufacturing process of transparent semiconductor heating toughened glass |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87103537A (en) * | 1987-05-16 | 1988-12-07 | 北京市太阳能研究所 | A kind of novel electric heating body and technology |
| TWM269432U (en) * | 2004-10-13 | 2005-07-01 | Wen-Long Chyn | Heating device of electric heating film |
| KR20080010894A (en) * | 2006-07-28 | 2008-01-31 | 조인셋 주식회사 | Ceramic component and method for the same |
| CN102740514A (en) * | 2011-04-02 | 2012-10-17 | 佛山市达利亚热能科技有限公司 | Mica plate coating electric heating device and manufacturing method thereof |
| CN111669846A (en) * | 2020-06-11 | 2020-09-15 | 安徽宇航派蒙健康科技股份有限公司 | Preparation method of graphene electrothermal film for floor heating |
-
2021
- 2021-06-08 CN CN202110638268.8A patent/CN113382487A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87103537A (en) * | 1987-05-16 | 1988-12-07 | 北京市太阳能研究所 | A kind of novel electric heating body and technology |
| TWM269432U (en) * | 2004-10-13 | 2005-07-01 | Wen-Long Chyn | Heating device of electric heating film |
| KR20080010894A (en) * | 2006-07-28 | 2008-01-31 | 조인셋 주식회사 | Ceramic component and method for the same |
| CN102740514A (en) * | 2011-04-02 | 2012-10-17 | 佛山市达利亚热能科技有限公司 | Mica plate coating electric heating device and manufacturing method thereof |
| CN111669846A (en) * | 2020-06-11 | 2020-09-15 | 安徽宇航派蒙健康科技股份有限公司 | Preparation method of graphene electrothermal film for floor heating |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114630458A (en) * | 2022-03-14 | 2022-06-14 | 福建晶烯新材料科技有限公司 | Manufacturing process of transparent semiconductor heating toughened glass |
| CN114630458B (en) * | 2022-03-14 | 2023-10-27 | 福建晶烯新材料科技有限公司 | Manufacturing process of transparent semiconductor heating toughened glass |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101923928B (en) | High-frequency patch resistor and manufacturing method thereof | |
| EP2312916B1 (en) | Circuit board and semiconductor module | |
| CN1123895C (en) | PTC thermister chip and method for manufacturing the same | |
| CN113382487A (en) | Electrode structure for transparent semiconductor nano electrothermal film and preparation process | |
| CN104240881B (en) | Array type chip resistor and its manufacture method | |
| JP2005340439A (en) | Heater, wafer heating device, and manufacturing method thereof | |
| JP2019094538A (en) | Method for determining arrangement of feed points in electroplating apparatus, and electroplating apparatus for plating rectangular substrate | |
| US5291175A (en) | Limiting heat flow in planar, high-density power resistors | |
| KR100797670B1 (en) | Formation Method of Plating Line for Printed Circuit Board | |
| SE519461C2 (en) | Electronic component and radio terminal utilizing this | |
| CN105576061A (en) | High-conductivity and high-voltage solar photoelectric glass plate | |
| CN209845454U (en) | Circuit board with multiple fusing protection | |
| CN103109334A (en) | Solid electrolytic capacitor element, method for producing same, and tool for producing said solid electrolytic capacitor element | |
| JPH0575255A (en) | Hybrid substrate and circuit module on which the substrate is mounted, and manufacture thereof | |
| JP2617637B2 (en) | Partial plating apparatus and lead frame for semiconductor device | |
| GB2133934A (en) | Improvements relating to thick film circuits | |
| JP4484672B2 (en) | Multiple wiring board | |
| JP2003234057A (en) | Fuse resistor and its manufacturing method | |
| CN210609861U (en) | Battery protection board with trapezoidal etching structure | |
| TWI720664B (en) | Solar cell and method for manufacturing solar cell | |
| JPS60212986A (en) | Dc voltage applying ceramic heater | |
| JPH10178246A (en) | Circuit board and its manufacture | |
| CN115547602A (en) | Energy-saving and environment-friendly preparation method of wafer resistor | |
| CN114630458A (en) | Manufacturing process of transparent semiconductor heating toughened glass | |
| SU790373A1 (en) | Method of wiring printed circuit board |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |