CN113375813A - Infrared sensor - Google Patents
Infrared sensor Download PDFInfo
- Publication number
- CN113375813A CN113375813A CN202010163188.7A CN202010163188A CN113375813A CN 113375813 A CN113375813 A CN 113375813A CN 202010163188 A CN202010163188 A CN 202010163188A CN 113375813 A CN113375813 A CN 113375813A
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- China
- Prior art keywords
- layer
- thermal sensing
- infrared sensor
- sensing layer
- temperature
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- 239000010410 layer Substances 0.000 claims description 112
- 239000011241 protective layer Substances 0.000 claims description 11
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 5
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 5
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 3
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 8
- 238000004321 preservation Methods 0.000 abstract description 4
- 230000006698 induction Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 8
- 238000001514 detection method Methods 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
- G01J5/14—Electrical features thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention relates to an infrared sensor, which comprises a thermal sensing layer capable of absorbing infrared heat energy, wherein the thermal sensing layer is connected to a thermoelectric layer, the thermoelectric layer can generate electric energy according to the heat energy of the thermal sensing layer, and two electrodes of the thermoelectric layer are respectively provided with a conductive unit so as to be connected to a circuit board through the conductive units. The other side of the thermoelectric layer opposite to the thermal induction layer is also provided with a reflector to reflect infrared heat energy to the thermoelectric layer. Therefore, the thermal sensing layer can transmit the received temperature to the thermoelectric layer, the thermoelectric layer can generate electric energy according to the temperature without external voltage, so that the temperature can be correspondingly judged according to the electric energy, and the infrared temperature sensor has the functions of heat insulation, heat preservation, insulation and the like, and can effectively detect the temperature of infrared rays.
Description
Technical Field
The present invention relates to a temperature sensor, and more particularly, to an infrared sensor capable of detecting temperature without applying electric energy.
Background
The thermistor is a variable resistor, different from a general resistor with a fixed resistance value. The temperature range detectable by the thermistor is between-40 ℃ and 300 ℃, and the thermistor is sensitive to temperature change. The thermistor has the characteristics of showing different resistance values at different temperatures, and has a simple structure and low cost, so the thermistor is usually used for sensing the temperature and is used as a temperature sensing device.
When the thermistor is applied to temperature detection, the used measuring circuit mostly adopts a bridge circuit to measure, a user applies voltage to the thermistor in the measuring circuit, the voltage passes through the thermistor to generate output voltage, a tester can judge the current resistance value according to the output voltage and estimate the temperature sensed by the thermistor corresponding to the resistance value.
However, when the thermistor detects temperature, a voltage source needs to be additionally applied to the thermistor to effectively detect temperature, and the resistance value and the temperature change of the thermistor belong to nonlinear changes, so that the temperature range is limited, and the stability of the detected temperature is insufficient. In addition, the thermistor is fragile and generates heat during use, so the applicable range of the thermistor is limited during temperature measurement.
In view of the above, the present invention provides an infrared sensor to overcome the above problems.
Disclosure of Invention
The present invention provides an infrared sensor, wherein a thermal sensing layer can transmit temperature to a thermoelectric layer, so that the thermoelectric layer generates electric energy according to the temperature, and the temperature can be determined according to the change of the electric energy of the thermoelectric layer without external voltage, thereby effectively detecting the infrared temperature.
Another objective of the present invention is to provide an infrared sensor, the protection layer of which can effectively improve the effects of thermal insulation, heat preservation and insulation, and can improve the efficiency of temperature detection.
It is still another object of the present invention to provide an infrared sensor, which has a reflector for reflecting heat energy penetrating through a pyroelectric layer back to the pyroelectric layer, so as to effectively retain the heat energy of the infrared ray and improve the temperature sensing efficiency.
To achieve the above objective, the present invention provides an infrared sensor, which includes a thermal sensing layer for absorbing infrared heat. The thermal sensing layer is also connected with a thermoelectric layer, and the thermoelectric layer can generate electric energy according to the heat energy of the sensing layer.
In this embodiment, the infrared sensor further includes a reflector disposed on the other side of the pyroelectric layer opposite to the thermal sensing layer for reflecting infrared heat to the pyroelectric layer.
In this embodiment, the infrared sensor further includes a protection layer covering the thermal sensing layer.
In this embodiment, the protective layer is a silicon protective layer.
In this embodiment, the infrared sensor further includes a housing covering the thermal sensing layer and the thermoelectric layer, and a lens is disposed on the housing and opposite to the thermal sensing layer to focus the infrared rays to the thermal sensing layer.
In the present embodiment, the thermal sensing layer may be a vanadium oxide (VOx) thermal sensing layer, a manganese oxide (MnOx) thermal sensing layer, a nickel oxide (NiOx) thermal sensing layer, or a cobalt oxide (CoOx) thermal sensing layer.
In this embodiment, the thermoelectric layer is a thermoelectric material.
In this embodiment, the thermoelectric layer may be an aluminum nitride (AlN) thermoelectric layer, lithium tantalate (LiTaO)3) Thermoelectric layers or lithium niobate (LiNbO)3) A thermoelectric layer.
In this embodiment, the two electrodes of the thermoelectric layer are respectively provided with a conductive unit for connecting to a circuit board.
In the present embodiment, the conductive element is a conductive metal.
In summary, the present invention transmits the temperature to the thermoelectric layer through the thermal sensing layer, so that the thermoelectric layer generates the electric energy according to the temperature, and the temperature can be converted according to the change of the electric energy of the thermoelectric layer without external voltage, thereby effectively detecting the infrared temperature. The reflecting mirror is arranged on the heat-insulating layer, so that the effects of heat insulation, heat preservation, insulation and the like can be effectively improved, and the reflecting mirror is arranged on the heat-insulating layer and can effectively reflect heat energy to return to the heat-sensitive layer, so that the heat energy of infrared rays is reserved, and the benefit of temperature sensing is improved.
The purpose, technical content, features and effects of the present invention will be more readily understood through the detailed description of the embodiments.
Drawings
Fig. 1 is a schematic side view of a first embodiment of the invention.
Fig. 2 is a schematic view of a state of use of the first embodiment of the present invention.
Fig. 3 is a side schematic view of a second embodiment of the invention.
Description of reference numerals: 1-an infrared sensor; 10-a thermally sensitive layer; 12-a thermoelectric layer; 120. a 120' -electrode; 14. 14' -a conductive element; 16-a protective layer; 18-a mirror; 20-a circuit board; 2-an infrared sensor; 22-a housing; 24-lens.
Detailed Description
The invention relates to an infrared sensor which can sense temperature through infrared energy, can sense temperature without external voltage or current when sensing temperature, can effectively insulate heat, preserve heat, insulate and the like, and can improve temperature measurement benefit.
To understand how to achieve the above-mentioned effects and the design of the infrared sensor of the present invention, the structure of the infrared sensor 1 is described in detail, referring to fig. 1, the structure of the infrared sensor 1 of the present invention includes a thermal sensing layer 10 disposed on a thermoelectric layer 12, wherein the thermal sensing layer 10 can be a vanadium oxide (VOx) thermal sensing layer, a manganese oxide (MnOx) thermal sensing layer, a nickel oxide (NiOx) thermal sensing layer, or a cobalt oxide (CoOx) thermal sensing layer, which is made of transition metal oxide; the thermoelectric layer 12 may be a thermoelectric material, such as an aluminum nitride (AlN) thermoelectric layer, lithium tantalate (LiTaO)3) Thermoelectric layers or lithium niobate (LiNbO)3) Thermoelectric layers and other materials that are relatively hot and do not contain lead.
The thermal sensing layer 10 can absorb infrared heat energy and transfer the heat energy to the thermoelectric layer 12, so that the thermoelectric layer 12 generates electric energy according to the heat energy of the thermal sensing layer 10. The thermoelectric layer 12 is provided with conductive electrodes 120, 120 ', the thermoelectric layer 12 can be divided into horizontal electrodes or vertical electrodes according to the position difference of the electrodes 120, 120 ', the thermoelectric layer 12 of the present embodiment is a horizontal electrode, so the electrodes 120, 120 ' are respectively arranged on the two lateral sides of the thermoelectric layer 12 of the present embodiment and connected to the conductive units 14, 14 ', the conductive units 14, 14 ' of the present embodiment can be conductive metals, wherein the conductive unit 14 connected to the positive electrode 120 can be a metal with a work function matched with the absorbing material and the pyroelectric material, and the conductive unit 14 ' connected to the negative electrode 120 ' can be a metal matched with the pyroelectric material; the conductive elements 14, 14 'are further connected to a circuit board 20, when the thermoelectric layer 12 generates power according to the thermal sensing layer 10, the conductive elements 14, 14' can conduct the power to the circuit board 20, and the circuit board 20 can be connected to a voltage detecting device (not shown) for detecting the voltage value generated by the thermoelectric layer 12, so as to convert the voltage value into a temperature corresponding to the voltage value, thereby generating a temperature value.
Referring to fig. 1, the thermal sensing layer 10 is further covered with a protective layer 16, the protective layer 16 is made of an infrared-transparent material such as a silicon protective layer, and the protective layer 16 can protect the thermal sensing layer 10 and has the effects of blocking heat from flowing out, maintaining the temperature of the thermal sensing layer 10, insulating the thermal sensing layer, and the like, so as to improve the heat absorption effect of the thermal sensing layer 10. A mirror 18 is further disposed at the bottom of the thermoelectric layer 12, i.e. the other side opposite to the thermal sensing layer 10, and the mirror 18 is used to reflect infrared heat energy penetrating through the thermoelectric layer 12 back to the thermoelectric layer 12, so as to effectively preserve the temperature and improve the use efficiency of the thermoelectric layer 12, and also improve the temperature sensing efficiency.
Referring to fig. 2, the infrared sensor 1 of the present invention can be applied to a touch panel, and the specific embodiment is to arrange a plurality of infrared sensors 1 on a circuit board 20 in a matrix manner as pixels in the touch panel, when a user touches one of the infrared sensors 1, the infrared sensor 1 generates a voltage, so that the circuit board 20 transmits the generated voltage and the identity of the infrared sensor 1 generating the voltage to a voltage detection device (not shown), and the voltage detection device can determine the corresponding position of the infrared sensor 1, thus determining the coordinate position of the touch panel touched by the user, so as to perform corresponding signal processing.
In addition to the above embodiments, the present invention provides another structure of an embodiment, please refer to fig. 3, to describe the second embodiment of the present invention in detail, as shown in fig. 3, the infrared sensor 2 is structured except that the heat sensing layer 10 having the covering protective layer 16 is disposed on the pyroelectric layer 12, and the electrodes 120, 120 ' of the thermoelectric layer 12 are connected to the circuit board 20 through the conductive units 14, 14 ', the other side of the thermoelectric layer 12 opposite to the thermal sensing layer 10 is provided with the reflective mirror 18 and is located on the circuit board 20, which has the same structure as the first embodiment, and the present embodiment further includes a housing 22 for covering the thermal sensing layer 10, the thermoelectric layer 12, the conductive units 14, 14 ', the shielding layer 16 and the reflective mirror 18, and a lens 24 is disposed on the housing 22 and above the thermal sensing layer 10 to focus infrared rays to the thermal sensing layer 10, thereby improving the temperature sensing effect. The structure and material of the remaining second embodiment are the same as those of the first embodiment, and therefore, the description thereof will not be repeated.
In summary, the present invention transmits the temperature to the thermoelectric layer through the thermal sensing layer, so that the thermoelectric layer generates the electric energy according to the temperature, and the temperature can be converted according to the change of the electric energy of the thermoelectric layer without external voltage, thereby effectively detecting the infrared temperature. The reflecting mirror is arranged on the heat-insulating layer, so that the effects of heat insulation, heat preservation, insulation and the like can be effectively improved, and the reflecting mirror is arranged on the heat-insulating layer and can effectively reflect heat energy to return to the heat-sensitive layer, so that the heat energy of infrared rays is reserved, and the benefit of temperature sensing is improved.
The foregoing description is intended to be illustrative rather than limiting, and it will be appreciated by those skilled in the art that many modifications, variations or equivalents may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. An infrared sensor, comprising:
a thermal sensing layer for absorbing infrared heat; and
a thermoelectric layer connected to the thermal sensing layer for generating electric energy according to the thermal energy of the thermal sensing layer.
2. The infrared sensor as set forth in claim 1, further comprising a mirror disposed on a side of the pyroelectric layer opposite to the thermal sensing layer for reflecting the infrared heat to the pyroelectric layer.
3. The infrared sensor as set forth in claim 1, further comprising a protective layer covering the thermal sensing layer.
4. The infrared sensor as set forth in claim 3, wherein the protective layer is a silicon protective layer.
5. The infrared sensor as set forth in claim 1, further comprising a case covering the thermal sensing layer and the pyroelectric layer, wherein a lens is disposed on the case at a position opposite to the thermal sensing layer.
6. The infrared sensor as set forth in claim 1, wherein the thermal sensing layer is a vanadium oxide thermal sensing layer, a manganese oxide thermal sensing layer, a nickel oxide thermal sensing layer, or a cobalt oxide thermal sensing layer.
7. The infrared sensor as set forth in claim 1, wherein the pyroelectric layer is a pyroelectric material.
8. The infrared sensor as set forth in claim 1, wherein the pyroelectric layer is an aluminum nitride pyroelectric layer, a lithium tantalate pyroelectric layer or a lithium niobate pyroelectric layer.
9. The infrared sensor as set forth in claim 1, wherein each of the two electrodes of the pyroelectric layer is further provided with a conductive element for connecting to a circuit board.
10. The infrared sensor as set forth in claim 9, wherein the conductive element is a conductive metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010163188.7A CN113375813A (en) | 2020-03-10 | 2020-03-10 | Infrared sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010163188.7A CN113375813A (en) | 2020-03-10 | 2020-03-10 | Infrared sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113375813A true CN113375813A (en) | 2021-09-10 |
Family
ID=77569004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010163188.7A Pending CN113375813A (en) | 2020-03-10 | 2020-03-10 | Infrared sensor |
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| Country | Link |
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| CN (1) | CN113375813A (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60180180A (en) * | 1984-02-27 | 1985-09-13 | Matsushita Electric Ind Co Ltd | Detecting element for infrared ray |
| JPH0523070U (en) * | 1991-08-29 | 1993-03-26 | 株式会社大真空 | Infrared detector |
| CN1510633A (en) * | 2002-12-25 | 2004-07-07 | 力捷电脑股份有限公司 | Scanner with common illuminating light source |
| TW200415784A (en) * | 2002-08-26 | 2004-08-16 | Tokyo Shibaura Electric Co | Thermal infrared detector and infrared image sensor using the same |
| CN101246055A (en) * | 2008-03-13 | 2008-08-20 | 电子科技大学 | Lithium tantalate thin film infrared detector and manufacturing method |
| WO2011129307A1 (en) * | 2010-04-13 | 2011-10-20 | パナソニック電工株式会社 | Method for manufacturing infrared sensor |
| JP2013057632A (en) * | 2011-09-09 | 2013-03-28 | Citizen Electronics Co Ltd | Pyroelectric infrared sensor |
| TW201807833A (en) * | 2016-08-30 | 2018-03-01 | 原相科技股份有限公司 | Far infrared sensor apparatus having multiple sensing element arrays inside single package |
| WO2019069559A1 (en) * | 2017-10-03 | 2019-04-11 | ソニーセミコンダクタソリューションズ株式会社 | Image pickup device |
-
2020
- 2020-03-10 CN CN202010163188.7A patent/CN113375813A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60180180A (en) * | 1984-02-27 | 1985-09-13 | Matsushita Electric Ind Co Ltd | Detecting element for infrared ray |
| JPH0523070U (en) * | 1991-08-29 | 1993-03-26 | 株式会社大真空 | Infrared detector |
| TW200415784A (en) * | 2002-08-26 | 2004-08-16 | Tokyo Shibaura Electric Co | Thermal infrared detector and infrared image sensor using the same |
| CN1510633A (en) * | 2002-12-25 | 2004-07-07 | 力捷电脑股份有限公司 | Scanner with common illuminating light source |
| CN101246055A (en) * | 2008-03-13 | 2008-08-20 | 电子科技大学 | Lithium tantalate thin film infrared detector and manufacturing method |
| WO2011129307A1 (en) * | 2010-04-13 | 2011-10-20 | パナソニック電工株式会社 | Method for manufacturing infrared sensor |
| JP2011220939A (en) * | 2010-04-13 | 2011-11-04 | Panasonic Electric Works Co Ltd | Infrared-ray sensor manufacturing method |
| TW201142251A (en) * | 2010-04-13 | 2011-12-01 | Panasonic Elec Works Co Ltd | Method for manufacturing infrared sensor |
| JP2013057632A (en) * | 2011-09-09 | 2013-03-28 | Citizen Electronics Co Ltd | Pyroelectric infrared sensor |
| TW201807833A (en) * | 2016-08-30 | 2018-03-01 | 原相科技股份有限公司 | Far infrared sensor apparatus having multiple sensing element arrays inside single package |
| WO2019069559A1 (en) * | 2017-10-03 | 2019-04-11 | ソニーセミコンダクタソリューションズ株式会社 | Image pickup device |
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