JPS60180180A - Detecting element for infrared ray - Google Patents
Detecting element for infrared rayInfo
- Publication number
- JPS60180180A JPS60180180A JP59036568A JP3656884A JPS60180180A JP S60180180 A JPS60180180 A JP S60180180A JP 59036568 A JP59036568 A JP 59036568A JP 3656884 A JP3656884 A JP 3656884A JP S60180180 A JPS60180180 A JP S60180180A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin
- substrate
- mixed
- infrared absorption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims abstract description 24
- 239000010408 film Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000011358 absorbing material Substances 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 4
- 230000010287 polarization Effects 0.000 claims 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 13
- 230000035945 sensitivity Effects 0.000 abstract description 10
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 239000003822 epoxy resin Substances 0.000 abstract description 5
- 229910052697 platinum Inorganic materials 0.000 abstract description 5
- 229920000647 polyepoxide Polymers 0.000 abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052799 carbon Inorganic materials 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract description 2
- 239000000395 magnesium oxide Substances 0.000 abstract description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 abstract description 2
- 230000003190 augmentative effect Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003415 peat Substances 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000011895 specific detection Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は強誘電体薄膜の焦電効果を利用した赤外線検出
素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an infrared detection element that utilizes the pyroelectric effect of a ferroelectric thin film.
従来例の構成とその問題点
物体は常温近傍において１０μｍの波長付近にピークを
もつ赤外線を輻射しており、この輻射エネルギーの波長
特性が物体の温度によって異なるので、物体から輻射さ
れる赤外線のエネルギーを測定することによって物体の
温度を非接触で測定できる。Conventional configuration and its problems Objects radiate infrared rays with a peak around a wavelength of 10 μm near room temperature, and the wavelength characteristics of this radiant energy vary depending on the temperature of the object, so the energy of the infrared rays radiated from the object By measuring , the temperature of an object can be measured without contact.
これらに使用される赤外線検出器としては、大別して量
子形と熱形とがあるが、量子形は応答速度が速く感度も
高いという特長をもっている反面、液体窒素などによる
冷却が必要であシ、感度の波長依存性が大きいという欠
点を肩する。Infrared detectors used in these applications can be roughly divided into quantum type and thermal type.While quantum type has the advantage of fast response speed and high sensitivity, it requires cooling with liquid nitrogen, etc. This overcomes the drawback of high wavelength dependence of sensitivity.
これに比べて熱形検出器は、感度は低いが常温で動作し
、感度の波長依存性がないという長所をもっている。こ
の熱形検出器にはサーミスタ形と焦電形とがあるが、焦
電形は比較的感度もよく、バイアス電源を必要とせず、
取扱いが簡便である。In comparison, thermal detectors have lower sensitivity, but have the advantage of operating at room temperature and having no wavelength dependence of sensitivity. There are two types of thermal detectors: thermistor type and pyroelectric type, but pyroelectric type has relatively high sensitivity and does not require a bias power supply.
Easy to handle.
このような理由から、赤外線検出器として、特性のよい
焦電形の検出器が望まれている。For these reasons, a pyroelectric detector with good characteristics is desired as an infrared detector.
焦電材料としては、単結晶、磁器、薄膜が考えられる。Possible pyroelectric materials include single crystals, porcelain, and thin films.
これらのうち、薄膜は高密度のアレイセンサを構成する
のに有利であり、比検出能りを大きくできるという点で
も有利である。Among these, thin films are advantageous in constructing a high-density array sensor, and are also advantageous in that they can increase specific detection ability.
このような焦電体薄膜は、通常、酸化物や８１などを基
板に用いて高周波スパッタリング法、或いは蒸着法など
で作成される。Such a pyroelectric thin film is usually created by a high frequency sputtering method, a vapor deposition method, or the like using an oxide, 81, or the like as a substrate.
焦電形赤外線検出器は、赤外線の吸収による温度上昇を
利用するので、赤外線を十分に吸収させること、及び基
板へ熱が逃げないようにすることが必要であシ、赤外線
の吸収はよい吸収膜をつけることによって可能となる一
方、基板への熱の逃げは基板をエツチングなどで取り除
くことにより解決できる。しかしながら、薄膜は通常数
μｍの厚みであって非常に破損し易く、その取扱いが困
難である。Pyroelectric infrared detectors utilize temperature rise due to absorption of infrared rays, so it is necessary to absorb sufficient infrared rays and prevent heat from escaping to the substrate. This is possible by attaching a film, while heat escape to the substrate can be solved by removing the substrate by etching or the like. However, the thin film is usually several micrometers thick and is very easily damaged, making it difficult to handle.
発明の目的
本発明はこのような基板を除去した薄膜素子のもつ欠点
を解消すると共に赤外線エネルギーの十分な吸収を行わ
せるために、少なくとも一方の電極面が赤外線吸収材料
を混入した有機フィルムで覆われていることを特徴とす
る新規々焦電形赤外線検出素子を提供するものである。OBJECTS OF THE INVENTION The present invention solves the drawbacks of such a thin film device without a substrate, and in order to ensure sufficient absorption of infrared energy, at least one electrode surface is covered with an organic film mixed with an infrared absorbing material. The present invention provides a novel pyroelectric infrared detection element characterized by:
発明の構成
上記目的を達成する本発明の赤外線検出素子は、基板を
除去した焦電体薄膜において、その少なくとも片面に赤
外線吸収材料を混入した有機フィルムでコーティングし
たものである。Structure of the Invention The infrared detecting element of the present invention, which achieves the above object, is a pyroelectric thin film from which a substrate has been removed, and at least one side of the pyroelectric thin film is coated with an organic film mixed with an infrared absorbing material.
実施例の説明
本発明の実施例を図面に基いて説明すると、スパッタ装
置を用いて厚さ約３００μｍの酸化マグネシウム基板（
１）に厚さ２μｍのチタン酸鉛薄膜（２）を成長させて
形成した。次いで、チタン酸鉛薄膜（２）の上面中央部
に白金電極（３）を蒸着、形成したのち、薄膜（２）の
上面全面に亘って赤外線吸収材料を混入した厚さ０５〜
１．５μｍのエポキシ樹脂（４）を塗布し、しかるのち
、濃燐酸で薄板（２）の下面外周部以外の基板（１）を
エッチして除去することにより四部（６）を形成した。DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described with reference to the drawings. A magnesium oxide substrate (about 300 μm thick) is prepared using a sputtering apparatus.
A lead titanate thin film (2) with a thickness of 2 μm was grown on 1). Next, a platinum electrode (3) is vapor-deposited and formed at the center of the upper surface of the lead titanate thin film (2), and then an infrared absorbing material is mixed over the entire upper surface of the thin film (2) to a thickness of 0.5~
A 1.5 μm thick epoxy resin (4) was applied, and then the substrate (1) other than the outer periphery of the lower surface of the thin plate (2) was etched and removed using concentrated phosphoric acid, thereby forming the fourth part (6).
次に、電極（３）に対向して薄膜（２）の下面中央部に
白金電極（５）を形成し、基板を設けていない赤外線検
出素子を作成した。作成後、素子を２００℃で和Ｖ
Ｏ／、の電界で１０分間分極した。Next, a platinum electrode (5) was formed at the center of the lower surface of the thin film (2), facing the electrode (3), to produce an infrared detection element without a substrate. After fabrication, the device was polarized at 200° C. for 10 minutes with an electric field of total V 2 O/.
エポキシ樹脂（４）に混入される赤外線吸収材料として
は、カーボン、全黒、白金黒の粉末を用いた。As the infrared absorbing material mixed into the epoxy resin (4), carbon, all black, and platinum black powders were used.
このように、エポキシ樹脂等の有機フィルムを塗布した
基板のガい素子を得、この素子と、有機フィルムを塗布
してい々い素子とについて落下試験を行って耐衝撃性を
調べた結果、有機フィルムを設けていない素子は約３０
伽の高さから落しても破損してしまうことが多かった。In this way, we obtained a glass element with a substrate coated with an organic film such as epoxy resin, and conducted a drop test on this element and another element coated with an organic film to examine the impact resistance. Approximately 30 elements without film
Even if dropped from the height of a pagoda, it was often damaged.
これに対して、有機フィルムで被覆している素子は１５
０Ｇｍの高さから落下させても何等の異常も認められな
かった。On the other hand, the element covered with organic film has 15
Even when dropped from a height of 0 Gm, no abnormality was observed.
従って、有機フィルムでコートした基板のない薄膜素子
は、衝Ｓ、に十分強いことが確認された。Therefore, it was confirmed that a thin film device without a substrate coated with an organic film is sufficiently strong against shock S.
次に、素子に赤外線を照射して赤外線検出器としての出
力電圧を測定した。その測定手段としては、泥炭５００
にの黒体炉からの放射光を２５Ｈｚでチョッピングし、
素子に照射することにより行った。Next, the device was irradiated with infrared rays and the output voltage as an infrared detector was measured. As a means of measurement, peat 500
The synchrotron radiation from the blackbody reactor was chopped at 25Hz,
This was done by irradiating the device.
素子の出力は、ＮＥＴを用いてインピーダンス変換を行
ったのち、６０ｄＢの増幅器を通してスペクトラムアナ
ライザを用い測定した。The output of the element was measured using a spectrum analyzer after impedance conversion was performed using a NET and then passed through a 60 dB amplifier.
下記の第１表に１有機フィルムのない素子と赤外線吸収
材を含まない有機フィルムを塗布した素子及びカーボン
を体積比で５．１０．３０％、白金を′５０俤、全黒を
３０俤、夫々混入した有機フィルムを塗布している素子
との出力電圧を示す。Table 1 below shows an element without an organic film, an element coated with an organic film containing no infrared absorbing material, carbon at a volume ratio of 5.10.30%, platinum at 50 yen, full black at 30 yen, The output voltages of the elements coated with the mixed organic films are shown.
第 １ 表
上記表から明らかなように、有機フィルムを塗布しても
僅かしか感度は増加しないが、カーボン、白金黒、全黒
を混入した有機フィルムを塗布すると著しく感度が増加
した。又有機フィルムにこれらの赤外線吸収材を混入さ
せても前述した素子の衝撃力テストに十分耐えた。Table 1 As is clear from the above table, the sensitivity increased only slightly when an organic film was applied, but the sensitivity increased significantly when an organic film mixed with carbon, platinum black, or total black was applied. Furthermore, even when these infrared absorbing materials were mixed into the organic film, the device sufficiently withstood the impact force test described above.
さらに又、薄膜の両面に有機フィルムを塗布した場合、
強度はさらに増加した。赤外線吸収材の混入した有機フ
ィルムを薄膜両面に塗層した素子の場合、出力はや＼増
加した。Furthermore, when organic films are applied on both sides of the thin film,
The strength increased further. In the case of a device with a thin layer of organic film mixed with an infrared absorbing material on both sides, the output increased slightly.
発明の効果
以上のように本発明の赤外線検出素子によれば、基板の
ない焦電薄膜の片面又は両面に、赤外線吸収材を混入さ
せた有機フィルムを塗布しているので、機械的衝撃力に
極めて強くて取扱いが容易となり、さらに感度も著しく
良好にものである。Effects of the Invention As described above, according to the infrared detecting element of the present invention, an organic film mixed with an infrared absorbing material is coated on one or both sides of the pyroelectric thin film without a substrate, so it is resistant to mechanical impact force. It is extremely strong and easy to handle, and also has extremely good sensitivity.
図面は本発明の実施例を示すもので、第１図はその素子
の断面図、第２図は平面図である。
（１）・・・基板、（２）・・・薄膜、（３）（５）ｌ
・・電極、（４）ｌ・・有機フィルム。
第７図
第２図The drawings show an embodiment of the present invention, and FIG. 1 is a sectional view of the device, and FIG. 2 is a plan view. (1)...Substrate, (2)...Thin film, (3)(5)l
...electrode, (4)l...organic film. Figure 7 Figure 2
Claims (1)
が除去され、且つ薄膜の片面又は両面に設けた電極の表
面が赤外線吸収材料を混入した有機フィルムで覆われて
いる赤外線検出素子。An infrared detection element in which the substrate of a ferroelectric thin film having a polarization axis perpendicular to the substrate surface is removed, and the surface of an electrode provided on one or both sides of the thin film is covered with an organic film mixed with an infrared absorbing material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59036568A JPS60180180A (en) | 1984-02-27 | 1984-02-27 | Detecting element for infrared ray |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59036568A JPS60180180A (en) | 1984-02-27 | 1984-02-27 | Detecting element for infrared ray |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60180180A true JPS60180180A (en) | 1985-09-13 |
| JPH0476235B2 JPH0476235B2 (en) | 1992-12-03 |
Family
ID=12473363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59036568A Granted JPS60180180A (en) | 1984-02-27 | 1984-02-27 | Detecting element for infrared ray |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60180180A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63313023A (en) * | 1987-06-16 | 1988-12-21 | Matsushita Electric Ind Co Ltd | Pyroelectric type infrared array sensor and its production |
| JPH0436265U (en) * | 1990-07-24 | 1992-03-26 | ||
| DE10009593A1 (en) * | 2000-02-29 | 2001-09-13 | Bosch Gmbh Robert | Structural body, used as infrared sensor, comprises supporting body connected to structuring layer having micro-component and recess filled with hardened liquid functional material |
| CN113375813A (en) * | 2020-03-10 | 2021-09-10 | 高尔科技股份有限公司 | Infrared sensor |
-
1984
- 1984-02-27 JP JP59036568A patent/JPS60180180A/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63313023A (en) * | 1987-06-16 | 1988-12-21 | Matsushita Electric Ind Co Ltd | Pyroelectric type infrared array sensor and its production |
| JPH0658261B2 (en) * | 1987-06-16 | 1994-08-03 | 松下電器産業株式会社 | Pyroelectric infrared array sensor and method of manufacturing the same |
| JPH0436265U (en) * | 1990-07-24 | 1992-03-26 | ||
| DE10009593A1 (en) * | 2000-02-29 | 2001-09-13 | Bosch Gmbh Robert | Structural body, used as infrared sensor, comprises supporting body connected to structuring layer having micro-component and recess filled with hardened liquid functional material |
| CN113375813A (en) * | 2020-03-10 | 2021-09-10 | 高尔科技股份有限公司 | Infrared sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0476235B2 (en) | 1992-12-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |