CN212228235U

CN212228235U - Infrared sensing device

Info

Publication number: CN212228235U
Application number: CN202020977913.XU
Authority: CN
Inventors: 严振洪; 吕胤嘉
Original assignee: Gaoer Technology Co Ltd
Current assignee: Gaoer Technology Co Ltd
Priority date: 2020-06-02
Filing date: 2020-06-02
Publication date: 2020-12-25
Anticipated expiration: 2030-06-02

Abstract

The utility model relates to an infrared sensing device, be equipped with an at least infrared sensing module on a base plate, it includes that an induction element and an environment reference unit connect a treater, and the treater can obtain determinand temperature signal according to induction element and environment reference unit's signal difference. The utility model discloses more can make four infrared sensing modules of group set up four positions on the base plate respectively, make the treater according to the determinand temperature signal that four infrared sensing modules of group produced, respond to determinand moving direction. The utility model discloses can effectively judge the difference between determinand temperature and the ambient temperature to the heat source and the moving direction of listening determinand.

Description

Infrared sensing device

Technical Field

The present invention relates to a temperature sensing technology, and more particularly to an infrared sensing device capable of effectively determining a signal of an object to be measured.

Background

A temperature sensor is a machine that converts temperature into a measurable signal to measure temperature. The Temperature sensors currently available include thermocouple Temperature sensors, Resistance Temperature Sensors (RTDs), and thermistor Temperature sensors. The thermistor temperature sensor can measure the temperature by utilizing the characteristic that the thermistor can show different resistance values at different temperatures.

When the thermistor is applied to temperature detection, a bridge circuit is mostly connected for measurement, a user applies voltage to the thermistor in the measuring circuit, the voltage passes through the thermistor to generate output voltage, a tester can judge the current resistance value according to the output voltage and estimate the temperature sensed by the thermistor corresponding to the resistance value.

However, the thermal sensor is commonly used to detect the temperature change of the fixed heat source, but if the thermal sensor is to sense the moving direction of the moving object, a processor with a higher calculation function is used to identify which temperature information belongs to the temperature information of the moving object in all the sensed temperature information, so that the cost of the whole thermal sensor is relatively increased.

In view of the above, the present invention provides an infrared sensing device to overcome the above problems.

SUMMERY OF THE UTILITY MODEL

The main objective of the present invention is to provide an infrared sensing device, which can determine the difference between the temperature of the object to be measured and the ambient temperature through a special simple structure design, so as to effectively determine and detect the temperature of the heat source of the object to be measured.

Another object of the present invention is to provide an infrared sensing device, which can effectively determine the moving direction of the object to be measured through a special simple structure design.

To achieve the above object, the present invention provides an infrared sensing device, which comprises an infrared sensing device including a substrate and at least one infrared sensing module disposed on the substrate. The infrared sensing module comprises a sensing unit and an environment reference unit, the sensing unit and the environment reference unit are connected with a processor, and the processor can obtain a temperature signal of the object to be measured according to the signal difference of the sensing unit and the environment reference unit.

In this embodiment, the infrared sensing modules may be four groups of infrared sensing modules, and the four groups of infrared sensing modules are respectively disposed at four positions on the substrate, so that the processor senses the moving direction of the object to be measured according to the temperature signals of the object to be measured generated by the four groups of infrared sensing modules.

In this embodiment, the sensing unit further includes a first sensing layer disposed on the substrate, and the first sensing layer is covered with a first passivation layer. The two electrodes of the first sensing layer are respectively connected with one end of the first lead, and the other ends of the two first leads are exposed out of the first protective layer so as to be connected with the processor.

In this embodiment, the sensing unit further includes a first insulating layer disposed between the substrate and the first sensing layer and covering the first protective layer.

In the present embodiment, the first sensing layer can be Vanadium Oxide (VO)_X) A thermal sensing film, a manganese oxide thermal sensing film, a nickel oxide thermal sensing film, or a cobalt oxide thermal sensing film.

In this embodiment, the environmental reference unit further includes a second sensing layer disposed on the substrate, and the second sensing layer is covered by a second passivation layer. A light shielding layer is arranged on the second protective layer and shields the second sensing layer. The two electrodes of the second sensing layer are respectively connected with one end of the second lead, and the other ends of the two second leads are exposed out of the second protective layer so as to be connected with the processor.

In this embodiment, the environmental reference unit further includes a second insulating layer disposed between the substrate and the second sensing layer and wrapped in the second protective layer.

In this embodiment, the second sensing layer may be Vanadium Oxide (VO)_X) A thermal sensing film, a manganese oxide thermal sensing film, a nickel oxide thermal sensing film, or a cobalt oxide thermal sensing film.

In this embodiment, the light-shielding layer may be an infrared light-shielding layer.

In this embodiment, the light shielding layer may be a metal thin film or a plastic film.

For further understanding and appreciation of the structural features and advantages of the invention, reference should be made to the drawings and detailed description thereof, which are illustrated in the accompanying drawings.

Drawings

Fig. 1 is a top view of a first embodiment of the present invention.

Fig. 2 is a schematic cross-sectional view of the sensing unit of the present invention.

Fig. 3 is a schematic cross-sectional view of an environmental reference unit according to the present invention.

Fig. 4 is a top view of a second embodiment of the present invention.

Description of reference numerals: 1-an infrared sensing device; 10-a substrate; 20-an infrared sensing module; 22-a sensing unit; 220-a first sensing layer; 222 — a first insulating layer; 224-first protective layer; 226-a first conductive line; 24-an environmental reference unit; 240-a second sensing layer; 242 — a second insulating layer; 244-second floor; 246-light-shielding layer; 248-a second wire; 30-a processor; 2-infrared sensing means.

Detailed Description

The utility model provides an infrared ray sensing device can judge and detect the heat source of determinand, and can effectively judge the moving direction of determinand through this technical characteristic.

To further understand how to achieve the above-mentioned effects, the structure of the infrared sensing device 1 is described in detail herein, referring to fig. 1, the infrared sensing device 1 includes a substrate 10, which can be a silicon substrate or a quartz substrate. The substrate 10 is provided with at least one infrared sensing module 20 for generating a temperature emitted from an object (not shown), and the infrared sensing module 20 includes a sensing unit 22 and an environmental reference unit 24. The substrate 10 is further provided with a processor 30 connected to the sensing Unit 22 and the environmental reference Unit 24, the processor 30 can be a Central Processing Unit (CPU) or a microcontroller (microcontroller) for Processing signals transmitted by the sensing Unit 22 and the environmental reference Unit 24, and the processor 30 can obtain a temperature signal of the object to be measured according to a signal difference between the sensing Unit 22 and the environmental reference Unit 24.

Referring to fig. 2, the structure of the sensing unit 22 of the infrared sensing module 20 is described in detail, in which the structure of the sensing unit 22 includes a first sensing layer 220 disposed on the substrate 10, and a first insulating layer 222 is disposed between the first sensing layer 220 and the substrate 10, in this embodiment, the first sensing layer 220 may be a thermal sensor, such as Vanadium Oxide (VO) (i.e., vanadium oxide)_X) A thermal sensing film, a manganese oxide thermal sensing film, a nickel oxide thermal sensing film, or a cobalt oxide thermal sensing film.The first sensing layer 220 is covered by a first passivation layer 224 capable of penetrating infrared rays to protect the first sensing layer 220, in this embodiment, the first passivation layer 224 may be a silicon carbide passivation layer, an aluminum oxide passivation layer, or an aluminum nitride passivation layer. The two electrodes of the first sensing layer 220 are further connected to one end of the first conducting wire 226, and the other end of the two first conducting wires 226 is exposed out of the first passivation layer 224 for connecting and transmitting signals to the processor 30.

Referring to fig. 1 and 3, the structure of the environmental reference unit 24 of the infrared sensing module 20 is described, the structure of the environmental reference unit 24 includes a second sensing layer 240 disposed on the substrate 10, and a second insulating layer 242 disposed between the second sensing layer 240 and the substrate 10, in this embodiment, the second sensing layer 240 may be a thermal sensor, such as Vanadium Oxide (VO)_X) A thermal sensing film, a manganese oxide thermal sensing film, a nickel oxide thermal sensing film, or a cobalt oxide thermal sensing film. The second sensing layer 240 is further covered with a second passivation layer 244 to protect the second sensing layer 240, in this embodiment, the second passivation layer 244 can be a silicon carbide passivation layer, an aluminum oxide passivation layer, or an aluminum nitride passivation layer. A light-shielding layer 246 is disposed on the second passivation layer 244, and the light-shielding layer 246 shields the second sensing layer 244 to block infrared rays from directly entering the second sensing layer 244, so that the second sensing layer 240 can only receive infrared rays from the environment. The two electrodes of the second sensing layer 240 are further connected to one end of the second conducting wire 248, and the other end of the second conducting wire 248 is exposed outside the second sheath for connecting and transmitting signals to the processor 30.

Referring to fig. 1 to fig. 3, in order to illustrate the temperature detecting status of the present invention, in the present embodiment, since the environmental reference unit 24 has the design of the light shielding layer 246, the infrared ray directly entering the second sensing layer 240 can be effectively shielded, so that the second sensing layer 240 only reacts according to the infrared ray scattered in the environment to generate the environmental temperature signal. The sensing unit 22 is not provided with the light shielding layer 246, so that the sensing unit 22 can receive the infrared ray emitted from the object besides the ambient temperature signal of the infrared ray scattered in the environment, so as to generate the object temperature signal and the ambient temperature signal. However, for the processor 30, the processor 30 only knows that the sensing unit 22 obtains two signals with different temperatures, and the processor 30 cannot distinguish whether the two signals are ambient temperature signals or object temperature signals.

For solving the above problem, the utility model discloses set up environment reference unit 24, when making treater 30 receive the determinand temperature signal and the ambient temperature signal of induction element 22 transmission, treater 30 can deduct the ambient temperature signal in induction element 22 according to environment reference unit 24's ambient temperature signal to discern determinand temperature signal, and then listen the temperature that the determinand sent out.

The utility model discloses an above-mentioned technical characteristic can effectively detect determinand temperature signal, consequently can effectively use on the sensing of discerning determinand moving direction. In detail, please refer to fig. 4 to illustrate another embodiment of the present invention, in this embodiment, the infrared sensing device 2 includes a substrate 10 for providing four sets of infrared sensing modules 20, the four sets of infrared sensing modules 20 are respectively disposed at four positions on the substrate 10, and a processor 30 is disposed on the substrate 10 for connecting the four sets of infrared sensing modules 20, the processor 30 receives and determines the temperature signal of the object to be measured of each sensing module 20, so that the processor 30 can determine the moving direction of the object to be measured according to the temperature signals of the object to be measured generated by the four sets of infrared sensing modules 20. The structures and connections of the substrate 10, the sensing module 20 and the processor 30 are the same as those of the above embodiments, and thus the description is not repeated.

To sum up, the utility model discloses a special simple structural design can judge the difference between determinand temperature and the ambient temperature to effectively judge and detect the temperature of determinand heat source, and can effectively use the technique of the moving direction who judges the determinand.

The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Therefore, all equivalent changes or modifications of the features and spirit of the present invention should be included in the scope of the present invention.

Claims

1. An infrared sensing device, comprising:

a substrate;

at least one infrared sensing module arranged on the substrate, wherein the infrared sensing module comprises a sensing unit and an environment reference unit; and

and the processor is connected with the sensing unit and the environment reference unit and used for obtaining a temperature signal of the object to be measured according to the signal difference between the sensing unit and the environment reference unit.

2. The infrared sensing device as claimed in claim 1, wherein the infrared sensing modules are four groups of infrared sensing modules respectively disposed at four positions on the substrate, and the processor senses a moving direction of the object according to the temperature signals of the object generated by the four groups of infrared sensing modules.

3. The infrared sensing device as set forth in claim 1, wherein the sensing unit further comprises:

the first sensing layer is arranged on the substrate, and a first protective layer is coated outside the first sensing layer; and

one end of each of the two first leads is connected with the electrode of the first sensing layer, and the other end of each of the two first leads is exposed out of the first protective layer so as to be connected with the processor.

4. The infrared sensing device as set forth in claim 3, wherein the sensing unit further comprises a first insulating layer disposed between the substrate and the first sensing layer and encased in the first protective layer.

5. The infrared sensing device as claimed in claim 3, wherein the first sensing layer is a vanadium oxide thermal sensing film, a manganese oxide thermal sensing film, a nickel oxide thermal sensing film or a cobalt oxide thermal sensing film.

6. The infrared sensing device as set forth in claim 3, wherein the first passivation layer is a silicon carbide passivation layer, an aluminum oxide passivation layer or an aluminum nitride film passivation layer.

7. The infrared sensing device as set forth in claim 1, wherein the environmental reference unit further includes:

the second sensing layer is arranged on the substrate, and a second protective layer is coated outside the second sensing layer;

a light shielding layer disposed on the second passivation layer and shielding the second sensing layer; and

one end of each of the two second leads is connected with the electrode of the second sensing layer, and the other end of each of the two second leads is exposed out of the second protective layer so as to be connected with the processor.

8. The infrared sensing device as set forth in claim 7, wherein the environmental reference unit further includes a second insulating layer disposed between the substrate and the second sensing layer and encased within the second protective layer.

9. The infrared sensing device as claimed in claim 7, wherein the second sensing layer is a vanadium oxide thermal sensing film, a manganese oxide thermal sensing film, a nickel oxide thermal sensing film or a cobalt oxide thermal sensing film.

10. The infrared sensing device as set forth in claim 7, wherein the light shielding layer is an infrared light shielding layer.

11. The infrared sensing device as set forth in claim 7, wherein the second passivation layer is a silicon carbide passivation layer, an aluminum oxide passivation layer or an aluminum nitride film passivation layer.

12. The infrared sensing device as set forth in claim 1, wherein the substrate is a silicon substrate or a quartz substrate.