CN113366645A - 双面tft面板及其制作方法、显示设备 - Google Patents

双面tft面板及其制作方法、显示设备 Download PDF

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CN113366645A
CN113366645A CN201980004193.9A CN201980004193A CN113366645A CN 113366645 A CN113366645 A CN 113366645A CN 201980004193 A CN201980004193 A CN 201980004193A CN 113366645 A CN113366645 A CN 113366645A
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double
tft panel
sided
tft
panel
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陈柏辅
王英琪
曹江
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
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    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Ceramic Engineering (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种双面TFT面板(6)制作方法、双面TFT面板(6)以及应用该双面TFT面板(6)的显示设备，该制作方法包括：提供两个基板(11)，在两个基板(11)上分别生长出一TFT面板(1)；分别在远离每一所述TFT面板(1)对应的基板(11)的一侧贴设有支撑膜(14)；将每一TFT面板(1)对应的基板(11)剥离；将两个TFT面板(1)剥离基板(11)的一侧粘贴在一起，生成双面TFT面板(6)；在双面TFT面板(6)上开设有导电孔(3)以将两个TFT面板(1)上的电极连通，从而能够提高双面TFT面板(6)的空间利用率。

Description

PCT国内申请，说明书已公开。

Claims (1)

  1. PCT国内申请，权利要求书已公开。
CN201980004193.9A 2019-12-19 2019-12-19 双面tft面板及其制作方法、显示设备 Pending CN113366645A (zh)

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PCT/CN2019/126674 WO2021120112A1 (zh) 2019-12-19 2019-12-19 双面tft面板及其制作方法、显示设备

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Families Citing this family (1)

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Publication number Priority date Publication date Assignee Title
CN114141850A (zh) * 2021-11-30 2022-03-04 深圳市华星光电半导体显示技术有限公司 柔性双面显示屏及其制作方法

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CN103247656A (zh) * 2012-02-07 2013-08-14 瀚宇彩晶股份有限公司 有机电致发光显示装置
CN103730485A (zh) * 2013-12-27 2014-04-16 京东方科技集团股份有限公司 双面显示的oled阵列基板及其制备方法、显示装置
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CN205645816U (zh) * 2016-05-04 2016-10-12 武汉华星光电技术有限公司 双面oled显示器
CN106601777A (zh) * 2016-12-28 2017-04-26 武汉华星光电技术有限公司 双面显示装置
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CN107153300A (zh) * 2017-06-14 2017-09-12 合肥市惠科精密模具有限公司 一种tft‑lcd双面液晶显示模组
CN107749418A (zh) * 2017-09-18 2018-03-02 合肥惠科金扬科技有限公司 一种双面显示装置的有机发光层组件的加工工艺
CN107833904A (zh) * 2017-10-30 2018-03-23 深圳市华星光电半导体显示技术有限公司 双面oled显示面板及其制造方法
CN109461744A (zh) * 2018-11-06 2019-03-12 上海天马微电子有限公司 一种双面显示面板、制作方法以及显示装置

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Publication number Priority date Publication date Assignee Title
CN106252383B (zh) * 2016-09-30 2019-01-01 京东方科技集团股份有限公司 双面显示面板及其制作方法、显示装置

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090206727A1 (en) * 2008-02-15 2009-08-20 Eunah Kim Organic light emitting display device
CN103247656A (zh) * 2012-02-07 2013-08-14 瀚宇彩晶股份有限公司 有机电致发光显示装置
CN103730485A (zh) * 2013-12-27 2014-04-16 京东方科技集团股份有限公司 双面显示的oled阵列基板及其制备方法、显示装置
CN105140260A (zh) * 2015-07-23 2015-12-09 京东方科技集团股份有限公司 有机发光二极管阵列基板及其制作方法、显示装置
CN205645816U (zh) * 2016-05-04 2016-10-12 武汉华星光电技术有限公司 双面oled显示器
CN106601777A (zh) * 2016-12-28 2017-04-26 武汉华星光电技术有限公司 双面显示装置
CN107104132A (zh) * 2017-06-14 2017-08-29 武汉华星光电半导体显示技术有限公司 双面显示装置及其制备方法
CN107153300A (zh) * 2017-06-14 2017-09-12 合肥市惠科精密模具有限公司 一种tft‑lcd双面液晶显示模组
CN107749418A (zh) * 2017-09-18 2018-03-02 合肥惠科金扬科技有限公司 一种双面显示装置的有机发光层组件的加工工艺
CN107833904A (zh) * 2017-10-30 2018-03-23 深圳市华星光电半导体显示技术有限公司 双面oled显示面板及其制造方法
CN109461744A (zh) * 2018-11-06 2019-03-12 上海天马微电子有限公司 一种双面显示面板、制作方法以及显示装置

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KR20210053343A (ko) 2021-05-11
WO2021120112A1 (zh) 2021-06-24
US20210242248A1 (en) 2021-08-05

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