CN113293358A - Preparation method for improving passivation effect of aluminum oxide back film by PECVD (plasma enhanced chemical vapor deposition) - Google Patents

Preparation method for improving passivation effect of aluminum oxide back film by PECVD (plasma enhanced chemical vapor deposition) Download PDF

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CN113293358A
CN113293358A CN202110421693.1A CN202110421693A CN113293358A CN 113293358 A CN113293358 A CN 113293358A CN 202110421693 A CN202110421693 A CN 202110421693A CN 113293358 A CN113293358 A CN 113293358A
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film
pecvd
flow
preparation
aluminum oxide
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蒋万昌
王森栋
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Shanxi Luan Solar Energy Technology Co Ltd
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Shanxi Luan Solar Energy Technology Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract

The invention relates to the field of solar cell production. The preparation method for improving the passivation effect of the aluminum oxide back film by PECVD comprises the following steps of texturing, diffusing, forward laser, alkali polishing and post-oxidation of a crystalline silicon wafer, and depositing the crystalline silicon wafer by using tubular PECVD; step two, carrying out first pre-cleaning; step three, preparing a silicon oxynitride film; step four, carrying out secondary pre-cleaning; and step five, preparing the silicon nitride film. The pre-cleaning is added before the silicon nitride film and the silicon oxynitride film are plated, pollution in the film plating process can be effectively reduced by adding the pre-cleaning agent before each film plating, and a purer SiNx film or SiOxNy film is generated, so that the open pressure is greatly improved.

Description

Preparation method for improving passivation effect of aluminum oxide back film by PECVD (plasma enhanced chemical vapor deposition)
Technical Field
The invention relates to the field of solar cell production.
Background
The PECVD aluminum oxide process is to plate a layer of aluminum oxide and silicon nitride film on the back surface of a silicon wafer, thereby reducing the impurity recombination of the silicon wafer, improving the efficiency of a cell, improving the sunlight absorption, reducing the back surface reflection and protecting the cell from being polluted. In order to improve the efficiency of crystalline silicon solar cells, it is generally necessary to passivate the crystalline silicon surface to reduce the recombination of surface defects with respect to minority carriers.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to manufacture a crystalline silicon cell back passivation antireflection film with better passivation effect.
The technical scheme adopted by the invention is as follows: the preparation method for improving the passivation effect of the aluminum oxide back film by PECVD comprises the following steps of texturing, diffusing, forward laser, alkali polishing and post-oxidation of a crystalline silicon wafer by tubular PECVD deposition
Step one, preparing an aluminum oxide film;
step two, carrying out first pre-cleaning, wherein in the tubular PECVD, the nitrogen flow is 5-10L/min, the ammonia flow is 5-10L/min, the pressure is 1000-2000mTorr, the radio frequency power is 7-15kw, the duration is 10-50s, and the treatment temperature is 350-450 ℃;
step three, preparing a silicon oxynitride film;
step four, carrying out second pre-cleaning, wherein in the tubular PECVD, the nitrogen flow is 3-10L/min, the ammonia flow is 5-10L/min, the pressure is 1000-2000mTorr, the radio frequency power is 7-15kw, the duration is 10-50s, and the treatment temperature is 350-500 ℃;
and step five, preparing the silicon nitride film.
In the first step, when preparing the alumina film, the nitrogen flow is 3-10L/min, the laughing gas flow is 5-10L/min, the TMA flow is 50-150ml/min, the pressure is 1000-2000mTorr, the radio frequency power is 7k-15kwatt, the time is 100-200s, and the treatment temperature is 350-450 ℃.
In the third step, when the silicon oxynitride film is prepared, the nitrogen flow is 3-10L/min, the ammonia flow is 3-6L/min, the silane flow is 450-;
in the fifth step, when preparing the silicon nitride film, the nitrogen flow is 5-10L/min, the ammonia flow is 3-6L/min, the silane flow is 450-1350ml/min, the pressure is 1000-2000mTorr, the radio frequency power is 7k-15kwatt, the time is 200-500s, and the processing temperature is 350-500 ℃.
The invention has the beneficial effects that: in the PECVD coating process, a pre-cleaning is added before the silicon nitride film and the silicon oxynitride film are coated, the pre-cleaning mainly has the main function of passivating the surface of a silicon wafer by using H ions in NH3 to replace impurities, the pollution in the coating process can be effectively reduced by adding the pre-cleaning before each coating, and a purer SiNx film and SiOxNy film are generated, so that the open pressure is greatly improved.
Detailed Description
Preparing a first alumina film by using PECVD, wherein the nitrogen flow is 3-10L/min, the laughing gas flow is 5-10L/min, the TMA flow is 50-150ml/min, the pressure is 1000-2000mTorr, the radio frequency power is 7k-15kwatt, the time is 100-200s, and the treatment temperature is 350-450 ℃;
carrying out first pre-cleaning on the silicon substrate by using PECVD, wherein the nitrogen flow is 5-10L/min, the ammonia flow is 5-10L/min, the pressure is 1000-2000mTorr, the radio frequency power is 7-15kw, the duration is 10-50s, and the treatment temperature is 350-450 ℃;
a silicon oxynitride film is manufactured on the first aluminum oxide film by PECVD, wherein the nitrogen flow is 3-10L/min, the ammonia flow is 3-6L/min, the silane flow is 450-1450ml/min, the laughing gas flow is 5-10L/min, the pressure is 1000-2000mTorr, the radio frequency power is 7k-15kwatt, the time is 100-300s, and the processing temperature is 350-500 ℃;
performing a second pre-cleaning on the silicon oxynitride film by PECVD, wherein the nitrogen flow is 3-10L/min, the ammonia flow is 5-10L/min, the pressure is 1000-2000mTorr, the radio frequency power is 7-15kw, the duration is 10-50s, and the treatment temperature is 350-500 ℃;
a silicon nitride film is manufactured on the silicon oxynitride film by PECVD, wherein the nitrogen flow is 5-10L/min, the ammonia flow is 3-6L/min, the silane flow is 450-1350ml/min, the pressure is 1000-2000mTorr, the radio frequency power is 7k-15kwatt, the time is 200-500s, and the processing temperature is 350-500 ℃.
Wherein the thickness of the aluminum oxide is 1-20nm, the thickness of the silicon oxynitride film is 20-40nm, the refractive index is 2.0-2.5, the thickness of the silicon nitride film is 30-50nm, the refractive index is 1.9-2.4, and the precleaning has the functions of increasing dense hydrogen passivation and removing impurities.
The multilayer silicon nitride film is deposited on the solar cell, the passivation effect of the surface of the solar cell can be improved, and the pollution in the film coating process can be effectively reduced by adding pre-cleaning before film coating at each time, so that the efficiency of the cell is further improved.

Claims (4)

  1. The preparation method for improving the passivation effect of the aluminum oxide back film by PECVD is used for depositing the textured, diffused, forward-laser, alkali-polished and post-oxidized crystalline silicon wafer by tubular PECVD, and is characterized in that: the PECVD deposition process is carried out as follows
    Step one, preparing an aluminum oxide film;
    step two, carrying out first pre-cleaning, wherein in the tubular PECVD, the nitrogen flow is 5-10L/min, the ammonia flow is 5-10L/min, the pressure is 1000-2000mTorr, the radio frequency power is 7-15kw, the duration is 10-50s, and the treatment temperature is 350-450 ℃;
    step three, preparing a silicon oxynitride film;
    step four, carrying out second pre-cleaning, wherein in the tubular PECVD, the nitrogen flow is 3-10L/min, the ammonia flow is 5-10L/min, the pressure is 1000-2000mTorr, the radio frequency power is 7-15kw, the duration is 10-50s, and the treatment temperature is 350-500 ℃;
    and step five, preparing the silicon nitride film.
  2. 2. The preparation method for improving the passivation effect of the aluminum oxide back film by PECVD according to claim 1, wherein the preparation method comprises the following steps: in the first step, when preparing the alumina film, the nitrogen flow is 3-10L/min, the laughing gas flow is 5-10L/min, the TMA flow is 50-150ml/min, the pressure is 1000-2000mTorr, the radio frequency power is 7k-15kwatt, the time is 100-200s, and the treatment temperature is 350-450 ℃.
  3. 3. The preparation method for improving the passivation effect of the aluminum oxide back film by PECVD according to claim 1, wherein the preparation method comprises the following steps: in the third step, when preparing the silicon oxynitride film, the nitrogen flow is 3-10L/min, the ammonia flow is 3-6L/min, the silane flow is 450-1450ml/min, the laughing gas flow is 5-10L/min, the pressure is 1000-2000mTorr, the radio frequency power is 7k-15kwatt, the time is 100-300s, and the processing temperature is 350-500 ℃.
  4. 4. The preparation method for improving the passivation effect of the aluminum oxide back film by PECVD according to claim 1, wherein the preparation method comprises the following steps: in the fifth step, when preparing the silicon nitride film, the nitrogen flow is 5-10L/min, the ammonia flow is 3-6L/min, the silane flow is 450-1350ml/min, the pressure is 1000-2000mTorr, the radio frequency power is 7k-15kwatt, the time is 200-500s, and the processing temperature is 350-500 ℃.
CN202110421693.1A 2021-04-20 2021-04-20 Preparation method for improving passivation effect of aluminum oxide back film by PECVD (plasma enhanced chemical vapor deposition) Pending CN113293358A (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107190247A (en) * 2017-06-20 2017-09-22 山西潞安太阳能科技有限责任公司 A kind of preparation method of solar cell PECVD multilayer passivated reflection reducing membranes
FR3059463A1 (en) * 2016-11-30 2018-06-01 Commissariat A L'energie Atomique Et Aux Energies Alternatives PASSIVATION STRUCTURE AND METHOD.
CN111628010A (en) * 2020-06-09 2020-09-04 山西潞安太阳能科技有限责任公司 Crystalline silicon battery back passivation laminated structure and preparation process
CN112234107A (en) * 2020-10-12 2021-01-15 横店集团东磁股份有限公司 Solar single-crystal PERC (Positive electrode collector) battery and preparation method thereof
CN112382698A (en) * 2020-10-30 2021-02-19 山西潞安太阳能科技有限责任公司 Single crystal PERC-SE double-sided battery manufacturing method suitable for alkali polishing process
CN112652681A (en) * 2020-12-23 2021-04-13 横店集团东磁股份有限公司 PERC solar cell back passivation film, preparation method thereof and PERC solar cell

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3059463A1 (en) * 2016-11-30 2018-06-01 Commissariat A L'energie Atomique Et Aux Energies Alternatives PASSIVATION STRUCTURE AND METHOD.
CN107190247A (en) * 2017-06-20 2017-09-22 山西潞安太阳能科技有限责任公司 A kind of preparation method of solar cell PECVD multilayer passivated reflection reducing membranes
CN111628010A (en) * 2020-06-09 2020-09-04 山西潞安太阳能科技有限责任公司 Crystalline silicon battery back passivation laminated structure and preparation process
CN112234107A (en) * 2020-10-12 2021-01-15 横店集团东磁股份有限公司 Solar single-crystal PERC (Positive electrode collector) battery and preparation method thereof
CN112382698A (en) * 2020-10-30 2021-02-19 山西潞安太阳能科技有限责任公司 Single crystal PERC-SE double-sided battery manufacturing method suitable for alkali polishing process
CN112652681A (en) * 2020-12-23 2021-04-13 横店集团东磁股份有限公司 PERC solar cell back passivation film, preparation method thereof and PERC solar cell

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