CN113261095A - 半导体装置、半导体装置的制造方法及电力转换装置 - Google Patents
半导体装置、半导体装置的制造方法及电力转换装置 Download PDFInfo
- Publication number
- CN113261095A CN113261095A CN201980088014.4A CN201980088014A CN113261095A CN 113261095 A CN113261095 A CN 113261095A CN 201980088014 A CN201980088014 A CN 201980088014A CN 113261095 A CN113261095 A CN 113261095A
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- Prior art keywords
- lead frame
- sealing member
- semiconductor device
- portions
- bent portion
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 173
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- 238000006243 chemical reaction Methods 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 11
- 238000007789 sealing Methods 0.000 claims abstract description 158
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
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- 229910052802 copper Inorganic materials 0.000 description 5
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- 238000013461 design Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
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- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
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- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
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- 230000005669 field effect Effects 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2019/001378 WO2020148879A1 (ja) | 2019-01-18 | 2019-01-18 | 半導体装置、半導体装置の製造方法及び電力変換装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN113261095A true CN113261095A (zh) | 2021-08-13 |
Family
ID=71614151
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201980088014.4A Pending CN113261095A (zh) | 2019-01-18 | 2019-01-18 | 半导体装置、半导体装置的制造方法及电力转换装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7053897B2 (ja) |
CN (1) | CN113261095A (ja) |
WO (1) | WO2020148879A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7479771B2 (ja) * | 2020-10-01 | 2024-05-09 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法及び電力変換装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005051109A (ja) * | 2003-07-30 | 2005-02-24 | Matsushita Electric Ind Co Ltd | パワー半導体モジュール |
US20060056213A1 (en) * | 2004-08-21 | 2006-03-16 | Joosang Lee | Power module package having excellent heat sink emission capability and method for manufacturing the same |
CN103972198A (zh) * | 2013-01-25 | 2014-08-06 | 三菱电机株式会社 | 半导体装置及半导体装置的制造方法 |
WO2015173862A1 (ja) * | 2014-05-12 | 2015-11-19 | 三菱電機株式会社 | 電力用半導体装置及びその製造方法 |
JP2017147332A (ja) * | 2016-02-17 | 2017-08-24 | 株式会社三井ハイテック | リードフレーム及びその製造方法、並びに半導体パッケージ |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63174453U (ja) * | 1986-05-30 | 1988-11-11 | ||
JPH02232957A (ja) * | 1989-03-06 | 1990-09-14 | Yamada Seisakusho:Kk | 樹脂封止型半導体装置用のリードフレーム |
JPH03108744A (ja) * | 1989-09-22 | 1991-05-08 | Toshiba Corp | 樹脂封止型半導体装置 |
JPH04286355A (ja) * | 1991-03-15 | 1992-10-12 | Matsushita Electron Corp | リードフレーム |
JP3108744B2 (ja) | 1994-04-28 | 2000-11-13 | 京セラ株式会社 | ノイズ防止回路 |
JP4286355B2 (ja) | 1998-12-16 | 2009-06-24 | 富士重工業株式会社 | 複合材の成形方法および成形治具 |
JP2010003947A (ja) * | 2008-06-23 | 2010-01-07 | Yamaha Corp | 半導体装置の製造方法 |
JP6305176B2 (ja) * | 2014-04-11 | 2018-04-04 | 三菱電機株式会社 | 半導体装置及び製造方法 |
JP6797285B2 (ja) * | 2017-04-06 | 2020-12-09 | 三菱電機株式会社 | 半導体装置およびその製造方法、ならびに電力変換装置 |
-
2019
- 2019-01-18 JP JP2020566062A patent/JP7053897B2/ja active Active
- 2019-01-18 CN CN201980088014.4A patent/CN113261095A/zh active Pending
- 2019-01-18 WO PCT/JP2019/001378 patent/WO2020148879A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005051109A (ja) * | 2003-07-30 | 2005-02-24 | Matsushita Electric Ind Co Ltd | パワー半導体モジュール |
US20060056213A1 (en) * | 2004-08-21 | 2006-03-16 | Joosang Lee | Power module package having excellent heat sink emission capability and method for manufacturing the same |
CN103972198A (zh) * | 2013-01-25 | 2014-08-06 | 三菱电机株式会社 | 半导体装置及半导体装置的制造方法 |
WO2015173862A1 (ja) * | 2014-05-12 | 2015-11-19 | 三菱電機株式会社 | 電力用半導体装置及びその製造方法 |
JP2017147332A (ja) * | 2016-02-17 | 2017-08-24 | 株式会社三井ハイテック | リードフレーム及びその製造方法、並びに半導体パッケージ |
Also Published As
Publication number | Publication date |
---|---|
JPWO2020148879A1 (ja) | 2021-09-27 |
WO2020148879A1 (ja) | 2020-07-23 |
JP7053897B2 (ja) | 2022-04-12 |
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