CN113257896B - Multi-field-plate radio frequency HEMT device and preparation method thereof - Google Patents
Multi-field-plate radio frequency HEMT device and preparation method thereof Download PDFInfo
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- 229910052733 gallium Inorganic materials 0.000 description 7
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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Abstract
The invention relates to a multi-field plate radio frequency HEMT device and a preparation method thereof, wherein the radio frequency HEMT device is provided with a first N-type doped GaN layer and a second N-type doped GaN layer at two side ends of an AlGaN barrier layer, and further, a source electrode and a drain electrode are arranged on the first N-type doped GaN layer and the second N-type doped GaN layer to form an N-type source electrode and a drain electrode, so that the concentration of 2DEG is increased, the electron mobility is increased, the on-resistance is reduced, the linearity of the cut-off frequency is improved, and the device can keep a better working state under high frequency; on the other hand, the two sides of the grid electrode are respectively provided with a first grid electrode field plate and a second grid electrode field plate which are connected to the grid electrode, a P-type doped GaN layer is arranged between the first grid electrode field plate, the second grid electrode field plate and the barrier layer, a source electrode field plate which extends to the grid electrode and the grid electrode field plate is arranged on the N-type source electrode, the distribution of an electric field is further regulated, and the breakdown voltage and the cut-off frequency f t of the device are improved.
Description
Technical Field
The invention relates to the field of radio frequency HEMT devices, in particular to a multi-field-plate radio frequency HEMT device and a preparation method thereof.
Background
With the development of wireless technology, the GaN radio frequency HEMT device can more effectively meet the requirements of 5G such as high power, high communication frequency band and high efficiency. According to the current research, the distribution of the electric field can be regulated by effectively utilizing the field plate structure, and the cut-off frequency (f T) and the Power Added Efficiency (PAE) can be improved on the premise of ensuring high breakdown voltage. How to reasonably arrange the field plate by combining the structure of the radio frequency device and further improve the performance of the radio frequency device so as to expand the application of the GaN HEMT in the radio frequency field is one of the problems to be solved.
Disclosure of Invention
The invention provides a multi-field-plate radio frequency HEMT device and a preparation method thereof. According to the radio frequency HEMT device, the first N-type doped GaN layer and the second N-type doped GaN layer are arranged at the two side ends of the AlGaN barrier layer, and then the source electrode and the drain electrode are arranged on the first N-type doped GaN layer and the second N-type doped GaN layer to form the N-type source electrode and the N-type drain electrode, so that the concentration of 2DEG is increased, the electron mobility is increased, the on-resistance is reduced, the linearity of the cut-off frequency is improved, and the device can keep a good working state under high frequency. On the other hand, the two sides of the grid electrode are respectively provided with a first grid electrode field plate and a second grid electrode field plate which are connected to the grid electrode, a P-type doped GaN layer is arranged between the first grid electrode field plate, the second grid electrode field plate and the barrier layer, a source electrode field plate which extends to the grid electrode and the grid electrode field plate is arranged on the N-type source electrode, the distribution of an electric field is further regulated, and the breakdown voltage and the cut-off frequency f t of the device are improved. Based on the above object, the present invention provides at least the following technical solutions:
A multi-field plate radio frequency HEMT device comprising: a substrate; an AlGaN buffer layer located on the substrate; the GaN channel layer is positioned on the AlGaN buffer layer; the first N-type doped GaN layer, the AlGaN barrier layer and the second N-type doped GaN layer are positioned on the GaN channel layer; the source electrode and the source electrode field plate connected to the source electrode are positioned on the first N-type doped GaN layer; the drain electrode is positioned on the second N-type doped GaN layer; the grid electrode and the grid electrode field plate connected to the grid electrode are positioned on the AlGaN barrier layer;
A first passivation layer is arranged between the grid electrode and the AlGaN barrier layer, and a P-type doped GaN layer is arranged between the grid electrode field plate and the AlGaN barrier layer; one end of the source field plate is connected to the source, and the other end extends across the gate to a side of the gate field plate near the drain.
The grid field plate comprises a first grid field plate and a second grid field plate; one end of the first grid electrode field plate is connected to the grid electrode, and the other end of the first grid electrode field plate extends to be close to the source electrode; one end of the second grid electrode field plate is connected to the grid electrode, and the other end of the second grid electrode field plate extends to be close to the drain electrode.
The first N-type doped GaN layer, the AlGaN barrier layer and the second N-type doped GaN layer are arranged on the GaN channel layer in the same layer, and the AlGaN barrier layer is positioned between the first N-type doped GaN layer and the second N-type doped GaN layer.
And a first P-type doped GaN layer is arranged between the first grid field plate and the AlGaN barrier layer, and a second P-type doped GaN layer is arranged between the second grid field plate and the AlGaN barrier layer.
Preferably, the thickness of the first P-type doped GaN layer is equal to the thickness of the second P-type doped GaN layer.
The thickness of the P-type doped GaN layer is 40 nm-50 nm; the thickness of the first passivation layer is 20 nm-30 nm.
Preferably, the thickness of the N-type doped GaN layer is equal to that of the AlGaN barrier layer, and the thickness of the N-type doped GaN layer is 20 nm-30 nm.
A second passivation layer is disposed between the source and source field plates, the gate and gate field plates, and the drain.
The Al component of the AlGaN barrier layer is preferably 20% -30%; the Al component of the AlGaN buffer layer is preferably 5% -10%.
The preparation method of the multi-field-plate radio frequency HEMT device comprises the following steps:
Sequentially epitaxially growing an AlGaN buffer layer and a GaN channel layer on a substrate;
Depositing a first mask layer on the GaN channel layer to form a first mask pattern;
epitaxially growing an AlGaN barrier layer on the GaN channel layer;
Depositing a second mask layer to form a second mask pattern, and etching to remove the first mask pattern;
epitaxially growing an N-type doped GaN layer, and etching to remove the second mask pattern;
depositing a third mask layer to form a growth window of the P-type doped GaN layer;
epitaxially growing a P-type doped GaN layer, and etching to remove the third mask layer;
Depositing a fourth mask layer to form a gate growth window, and etching the fourth mask layer at the gate growth window to the target thickness to form a first passivation layer;
Depositing gate metal;
Forming a grid field plate window, and depositing grid field plate metal;
depositing a second passivation layer to form source and drain windows;
Depositing source and drain metals;
Forming a source field plate window, and depositing source field plate metal;
The second passivation layer is thickened.
Drawings
Fig. 1 is a schematic cross-sectional structure of a multi-field-plate rf HEMT device according to an embodiment of the invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which some, but not all embodiments of the invention are shown. Based on the embodiments of the present invention, other embodiments that may be obtained by those of ordinary skill in the art without making any inventive effort are within the scope of the present invention. The experimental methods described in the following examples are all conventional methods unless otherwise specified; the reagents and materials, unless otherwise specified, are commercially available from the public sources. The present invention will be described in further detail below.
Spatially relative terms, such as "under", "below", "lower", "above", "upper" and the like, may be used herein to explain the positioning of one element relative to a second element. These terms are intended to encompass different orientations of the device in addition to different orientations than those depicted in the figures.
In addition, the use of terms such as "first," "second," etc. to describe various elements, layers, regions, sections, etc. are not intended to be limiting. The use of "having," "containing," "including," etc. are open ended terms that indicate the presence of stated elements or features, but do not exclude additional elements or features. Unless the context clearly dictates otherwise.
An embodiment of the present invention provides a multi-field plate rf HEMT device, referring to fig. 1, the device includes a substrate 1, an AlGaN buffer layer 2 and a GaN channel layer 3 stacked on the substrate 1, a first N-type doped GaN layer 52, an AlGaN barrier layer 4 and a second N-type doped GaN layer 51 are arranged on the GaN channel layer 3 in the same layer, and the AlGaN barrier layer 4 is located between the first N-type doped GaN layer 52 and the second N-type doped GaN layer 51.
The substrate 1 is preferably a silicon substrate. The Al component of the AlGaN buffer layer 2 is preferably 5 to 10% and the thickness thereof is 1.5 to 2.5. Mu.m. The GaN channel layer has a thickness of 0.6 μm to 1.0 μm. The Al component of the AlGaN barrier layer 4 is preferably 20 to 30% and the thickness thereof is 20 to 30nm. Preferably, the thicknesses of the first N-type doped GaN layer 52 and the second N-type doped GaN layer 51 are equal to the thickness of the AlGaN barrier layer 4.
Also included are a source and source field plate connected to the source, a drain and gate and a gate field plate connected to the gate, the source and source field plate 7 being located on the first N-doped GaN layer 52, the drain 6 being located on the second N-doped GaN layer 51, the gate and gate field plate 10 being located on the AlGaN barrier layer 4. Specifically, a first passivation layer 91 is disposed between the gate and the AlGaN barrier layer 4, and a P-type doped GaN layer is disposed between the gate field plate and the AlGaN barrier layer 4. One end of the source field plate is connected to the source and the other end extends across the gate to the side of the gate field plate near the drain 6.
Preferably, the gate and the gate field plate 10 have a T-shaped cross section, and as shown in fig. 1, the gate field plate includes a first gate field plate and a second gate field plate, and the first gate field plate and the second gate field plate are located at two sides of the gate. One end of the first grid electrode field plate is connected to the grid electrode, and the other end of the first grid electrode field plate extends to be close to the source electrode; one end of the second grid electrode field plate is connected to the grid electrode, and the other end extends to be close to the drain electrode. A first P-type doped GaN layer 82 is arranged between the first gate field plate and the AlGaN barrier layer, and a second P-type doped GaN layer 81 is arranged between the second gate field plate and the AlGaN barrier layer. Preferably, the thickness of the first P-type doped GaN layer 82 is equal to the thickness of the second P-type doped GaN layer 81, which is 40nm to 50nm. The thickness of the first passivation layer 91 is 20nm to 30nm.
In another embodiment, the thickness of the first P-doped GaN layer 82 is not equal to the thickness of the second P-doped GaN layer 81, and accordingly, the position of the gate field plate thereon moves with the thickness of the P-doped GaN layer.
A second passivation layer 92 is arranged between the structure of the gate and gate field plate 10, the first P-doped GaN layer 82, the second P-doped GaN layer 81 and the first passivation layer 91 and the source and source field plate 7, the drain 8 and the AlGaN barrier layer 4. The first passivation layer 91 and the second passivation layer 92 are preferably Si 3N4.
The radio frequency HEMT device adopts a structure with multiple field plates, the distribution of an electric field is regulated by the arrangement of the source field plates and the grid field plates, and the breakdown voltage and the cut-off frequency f t are improved. In addition, the arrangement of the N-type source electrode and the N-type drain electrode can improve the concentration of the 2DEG to increase the electron mobility, so that the on-resistance is reduced, the linearity of the cut-off frequency is improved, and the device can keep a good working state at high frequency.
Based on the multi-field-plate radio frequency HEMT device, the embodiment of the invention also provides a preparation method of the device, which comprises the following steps:
Firstly, selecting a Si substrate, sequentially placing the Si substrate in an acetone, isopropyl alcohol and hydrofluoric acid solution for ultrasonic cleaning, then placing the Si substrate in a mixed solution of hydrogen peroxide and sulfuric acid for soaking, finally placing the Si substrate in hydrofluoric acid for soaking, and then flushing the Si substrate with deionized water and drying the Si substrate by nitrogen.
And then, growing an AlGaN buffer layer on the Si substrate by adopting a metal organic chemical vapor deposition process. Specifically, H 2、NH3, a gallium source and an aluminum source are introduced, the growth thickness of the AlGaN buffer layer is 2 mu m, and the molar content of Al element is 7%.
And continuing to grow the GaN channel layer on the AlGaN buffer layer. H 2、NH3 and a gallium source are introduced, the growth temperature is set to be 920 ℃, the pressure is set to be 40Torr, the flow rate of H 2 is 500sccm, the flow rate of NH 3 is 5000sccm, the flow rate of the gallium source is 220sccm, and the growth thickness is 8 μm.
A first mask layer, specifically silicon oxide, is then deposited over the GaN channel layer. And etching the first mask layer to form a barrier layer growth window.
And continuing to grow the AlGaN barrier layer. Specifically, H 2、NH3, a gallium source and an aluminum source are introduced, the growth temperature is set to 920 ℃, the growth thickness is 25nm, and the molar content of Al element is preferably 25%.
The first mask layer is etched and removed, preferably by a dry etching process. A second mask layer, preferably silicon oxide, is deposited over the AlGaN barrier layer. And etching the second mask layer to form an N-type doped GaN layer growth window.
And continuing to grow the N-type doped GaN layer. Specifically, H 2、NH3 and a gallium source are introduced, the growth temperature is set to 920 ℃, the pressure is 40Torr, the flow rate of H 2 is 500sccm, the flow rate of NH 3 is 5000sccm, the flow rate of the gallium source is 220sccm, and the growth thickness is 25nm. At this time, the N-type doped GaN layer and the AlGaN barrier layer are arranged on the same layer and are positioned on two sides of the AlGaN barrier layer.
The second mask layer is etched away, and the first mask layer is removed by a dry etching process.
And depositing a third mask layer to form a growth window of the P-type doped GaN layer. The third mask layer is preferably silicon oxide.
And epitaxially growing a P-type doped GaN layer, specifically, introducing H 2、NH3 and a gallium source, wherein the growth temperature is set to 920 ℃, and the growth thickness is 45nm.
And etching to remove the third mask layer. A fourth mask layer, preferably silicon nitride, is deposited. Spin-coating a photoresist layer, photoetching to form a gate window, and etching the fourth mask layer at the gate window to a target thickness, wherein the target thickness is preferably 25nm.
The deposition of Ti/Ni/Au metal combination is preferably an electron beam evaporation process deposition method, the vacuum degree is set to be less than 1.8X10 - 3 Pa, the power range is 200-1000W, and the evaporation rate isAnd (3) placing the deposited metal epitaxial wafer into an acetone solution for soaking for 20min, then performing ultrasonic cleaning, and then performing flushing with ultrapure water and nitrogen blow-drying to form a metal grid.
And continuing spin coating the photoresist layer, and photoetching to form a grid field plate window. And depositing the Ti/Ni/Au metal combination by adopting an electron beam evaporation process deposition method. The photoresist layer is then removed, forming a gate field plate structure connected to the gate.
A passivation layer, preferably silicon nitride, is deposited. Spin-coating a photoresist layer, forming source and drain windows by soft baking, exposing and developing, and then depositing a Ti/Ni/Au metal combination by using an electron beam evaporation process. Setting vacuum degree smaller than 1.8X10 -3 Pa, power range 200-1000W, evaporation rateAnd then soaking the epitaxial wafer deposited with the metal in an acetone solution to remove the photoresist layer, and finally flushing with ultrapure water and drying with nitrogen.
And (3) continuing spin coating the photoresist layer, and forming a source electrode field plate window through soft baking, exposure and development. And (3) continuously depositing Ti/Ni/Au metal combinations by adopting an electron beam evaporation process, soaking the epitaxial wafer after evaporating the source electrode field plate metal in an acetone solution for 20min, then performing ultrasonic cleaning, and finally obtaining the source electrode field plate connected to the source electrode by flushing with ultrapure water and blowing with nitrogen.
100 Nm-150 nm SiN is then deposited as passivation layer by PECVD process at 300 ℃.
Finally, photoetching the surface of the epitaxial wafer on which the source, the drain and the grid are formed to obtain a thickened electrode pattern, and thickening the electrode by adopting electron beam evaporation to finish the manufacture of the device shown in figure 1.
The above examples are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the above examples, and any other changes, modifications, substitutions, combinations, and simplifications that do not depart from the spirit and principle of the present invention should be made in the equivalent manner, and the embodiments are included in the protection scope of the present invention.
Claims (6)
1. The multi-field plate radio frequency HEMT device is characterized by comprising:
A substrate;
An AlGaN buffer layer located on the substrate;
the GaN channel layer is positioned on the AlGaN buffer layer;
The first N-type doped GaN layer, the AlGaN barrier layer and the second N-type doped GaN layer are sequentially arranged on the GaN channel layer in the same layer, the thickness of the N-type doped GaN layer is equal to that of the AlGaN barrier layer, and the Al component of the AlGaN barrier layer is 20% -30%;
the source electrode and the source electrode field plate connected to the source electrode are positioned on the first N-type doped GaN layer;
The drain electrode is positioned on the second N-type doped GaN layer;
the grid electrode is positioned on the AlGaN barrier layer, and the first grid electrode field plate and the second grid electrode field plate are respectively connected to two sides of the grid electrode, one end of the first grid electrode field plate is connected to one side of the grid electrode, and the other end of the first grid electrode field plate extends to be close to the source electrode; one end of the second grid electrode field plate is connected to the other side of the grid electrode, and the other end of the second grid electrode field plate extends to be close to the drain electrode;
The upper surface of the AlGaN barrier layer is provided with a first P-type doped GaN layer, a first passivation layer and a second P-type doped GaN layer side by side, a grid electrode is positioned on the first passivation layer, a first grid electrode field plate is positioned on the upper surface of the first P-type doped GaN layer, and a second grid electrode field plate is positioned on the upper surface of the second P-type doped GaN layer; one end of the source electrode field plate is connected to the source electrode, and the other end of the source electrode field plate stretches across the grid electrode to one side, close to the drain electrode, of the grid electrode field plate; the thicknesses of the first P type doped GaN layer and the second P type doped GaN layer are larger than the thickness of the first passivation layer, and the thickness of the first passivation layer is 20 nm-30 nm;
A second passivation layer is arranged between the source electrode, a source electrode field plate connected with the source electrode, the grid electrode and the grid electrode field plate, and the side wall of the first P type doped GaN layer facing the source electrode, a second passivation layer is arranged between the drain electrode and the second grid electrode field plate, and the side wall of the second P type doped GaN layer facing the drain electrode.
2. The multi-field plate radio frequency HEMT device of claim 1, wherein the thickness of the first P-doped GaN layer is equal to the thickness of the second P-doped GaN layer.
3. The multi-field-plate radio frequency HEMT device according to claim 1 or 2, wherein the thickness of the P-type doped GaN layer is 40 nm-50 nm.
4. The multi-field plate radio frequency HEMT device according to claim 1 or 2, wherein the thickness of the AlGaN barrier layer is 20 nm-30 nm.
5. The multi-field plate radio frequency HEMT device according to claim 1 or 2, wherein the Al component of the AlGaN buffer layer is 5% -10%.
6. The preparation method of the multi-field-plate radio frequency HEMT device is characterized by comprising the following steps of:
Sequentially epitaxially growing an AlGaN buffer layer and a GaN channel layer on a substrate;
Depositing a first mask layer on the GaN channel layer to form a first mask pattern;
epitaxially growing an AlGaN barrier layer in a first mask pattern on the GaN channel layer, wherein the Al component of the AlGaN barrier layer is 20% -30%;
depositing a second mask layer, forming second mask patterns at two ends of the AlGaN barrier layer, and etching to remove the first mask patterns;
Epitaxially growing a first N-type doped GaN layer and a second N-type doped GaN layer in a second mask pattern, and removing the second mask pattern by etching, wherein the thickness of the N-type doped GaN layer is equal to that of the AlGaN barrier layer;
Depositing a third mask layer on the AlGaN barrier layer to form a first P-type doped GaN layer growth window and a second P-type doped GaN layer growth window which are arranged at intervals;
Epitaxially growing a first P-type doped GaN layer and a second P-type doped GaN layer in the P-type doped GaN layer growth window, and etching to remove a third mask layer;
Depositing a fourth mask layer to form a grid growth window between the first P-type doped GaN layer and the second P-type doped GaN layer, etching the fourth mask layer at the grid growth window to a target thickness to form a first passivation layer, wherein the first P-type doped GaN layer, the first passivation layer and the second P-type doped GaN layer are arranged on the upper surface of the AlGaN barrier layer side by side;
Depositing gate metal;
Forming a gate field plate window, depositing a gate field plate metal, the gate field plate metal comprising a first gate field plate and a second gate field plate connected to the gate;
depositing a second passivation layer to form source and drain windows;
Depositing source and drain metals;
Forming a source field plate window, and depositing source field plate metal, wherein one end of the source field plate metal is connected to the source electrode, and the other end of the source field plate metal stretches across the grid electrode to one side of the grid electrode field plate, which is close to the drain electrode; one end of the first grid electrode field plate is connected to the grid electrode, and the other end of the first grid electrode field plate extends to be close to the source electrode; one end of the second grid electrode field plate is connected to the grid electrode, and the other end of the second grid electrode field plate extends to be close to the drain electrode;
Thickening the second passivation layer;
the first N-type doped GaN layer, the AlGaN barrier layer and the second N-type doped GaN layer are sequentially arranged on the GaN channel layer in the same layer; the source electrode and the source electrode field plate connected to the source electrode are positioned on the first N-type doped GaN layer; the drain electrode is positioned on the second N-type doped GaN layer; the source electrode and the source electrode field plate connected to the source electrode are positioned on the first N-type doped GaN layer; the drain electrode is positioned on the second N-type doped GaN layer;
The grid electrode, the first grid electrode field plate and the second grid electrode field plate which are connected to the grid electrode are positioned on the AlGaN barrier layer;
the grid electrode is positioned on the first passivation layer, the first grid electrode field plate is positioned on the upper surface of the first P-type doped GaN layer, and the second grid electrode field plate is positioned on the upper surface of the second P-type doped GaN layer; the thicknesses of the first P type doped GaN layer and the second P type doped GaN layer are larger than the thickness of the first passivation layer, and the thickness of the first passivation layer is 20 nm-30 nm;
A second passivation layer is arranged between the source electrode, a source electrode field plate connected with the source electrode, the grid electrode and the grid electrode field plate and between the source electrode field plate and the side wall of the first P-type doped GaN layer facing the source electrode; a second passivation layer is arranged between the drain electrode and the second grid electrode field plate and between the drain electrode and the side wall of the second P type doped GaN layer facing the drain electrode.
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