CN113249724A - 一种金属膜上沉积二氧化硅膜的方法 - Google Patents

一种金属膜上沉积二氧化硅膜的方法 Download PDF

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CN113249724A
CN113249724A CN202110513607.XA CN202110513607A CN113249724A CN 113249724 A CN113249724 A CN 113249724A CN 202110513607 A CN202110513607 A CN 202110513607A CN 113249724 A CN113249724 A CN 113249724A
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silicon dioxide
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李朝晖
李玉茹
刘林
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Sun Yat Sen University
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Abstract

本发明涉及半导体技术领域，公开了一种金属膜上沉积二氧化硅膜的方法，包括：步骤一：在衬底上生长金属膜；步骤二：在步骤一所得的金属膜上生长钛膜；步骤三：在步骤二所得的钛膜上沉积二氧化硅膜。本发明将钛膜作为过渡层，由于钛膜的透射率高，不影响金属膜的反射性能，且钛膜的粘附性好，可将金属膜和二氧化硅膜很好地粘连在一起，减小因二氧化硅膜和金属膜的粘附性能差而使气体停留在二者之间导致的气泡，使二氧化硅膜的成膜效果好，保证反射结构的反射性能。

Description

一种金属膜上沉积二氧化硅膜的方法
技术领域
本发明涉及半导体技术领域，特别是涉及一种金属膜上沉积二氧化硅膜的方法。
背景技术
金属反射镜是采用薄的金属涂层得到的反射镜，金属涂层可由蒸镀技术或者溅射技术制作。金属涂层至于沉底之上，通常为玻璃或者金属。常见的金属涂层包含铝，银或金；铜，铬或其它镍铬合金不常用。金属涂层上面通常会涂覆一层或者多层薄的介质材料，例如非晶态二氧化硅(SiO2)或者氮化硅(Si3N4)，材料是用来保护金属涂层避免被氧化或刮蹭。这些保护涂层比无涂层的更加耐磨，而且比介质反射镜更加灵敏。在现有技术中，金属涂层上通过覆盖二氧化硅层。
二氧化硅作为半导体制造领域使用范围最广的绝缘介质之一，其可用作场氧化层、栅氧化层和浅沟槽隔离结构(STI)等，制造二氧化硅膜可通过热氧化法和化学气相沉积(Chemical Vapor Deposition；简称CVD)工艺制作，其所制作的氧化硅分别简称为热氧化氧化硅和CVD氧化硅。热氧化法和CVD都需要进行升温来制作二氧化硅膜，但是用作反射结构的金属都较为活泼，在温度高的情况下膨胀，导致金属层表面出现气泡，影响反射结构的性能和后续加工。
中国发明专利CN110596811A(公开日为2020年07月17日)公开了一种光栅耦合结构及其制作方法，包括：底部的第一硅层；位于所述第一硅层上的第一氧化硅层；位于所述第一氧化硅层上的反射膜图形，其材质为高反射率的金属或金属氧化物；位于所述第一氧化硅层和反射膜图形上的第二氧化硅层；位于所述第二氧化硅层上的第三氧化硅层；位于所述第三氧化硅层上的顶层硅，包括与所述反射膜图形上下位置对应的光栅图形，所述光栅图形在所述反射膜图形所在面上的投影位于所述反射膜图形内部。在该专利中，反射膜图形可通过对反射层进行光刻来制备，反射层可在第一氧化硅层上通过气相沉积或溅射方法进行制备，由于采用现有的气相沉积法会导致金属层产生较多气泡，而导致反射性能和后续加工受到影响。
发明内容
本发明的目的是提供一种成膜效果好的金属膜上沉积二氧化硅膜的方法。
为了实现上述目的，本发明提供了一种金属膜上沉积二氧化硅膜的方法，包括如下步骤：
步骤一：在衬底上生长金属膜；
步骤二：在步骤一所得的金属膜上生长钛膜；
步骤三：在步骤二所得的钛膜上沉积二氧化硅膜。
作为优选方案，所述金属膜为金膜。
作为优选方案，步骤二所生长的钛膜的厚度为2～5nm。
作为优选方案，在步骤三中，使用ICP CVD沉积二氧化硅膜。
作为优选方案，ICP CVD的腔内温度保持在50～100℃。
作为优选方案，ICP CVD的腔内温度保持在75℃。
作为优选方案，在步骤三中，进行二氧化硅膜沉积前，采用N2O处理钛膜的上表面。
作为优选方案，在步骤二中，钛膜生成后，对钛膜进行烘干。
作为优选方案，烘干温度为100～130℃。
作为优选方案，在步骤一中，采用电子束蒸镀法生长金膜。
与现有技术相比，本发明的有益效果在于：
本发明通过由下至上依次制作金属膜、钛膜和二氧化硅膜，将钛膜作为过渡层，由于钛膜的透射率高，不影响金属膜的反射性能，且钛膜的粘附性好，可将金属膜和二氧化硅膜很好地粘连在一起，减小因二氧化硅膜和金属膜的粘附性能差而使气体停留在二者之间导致的气泡，使二氧化硅膜的成膜效果好，保证反射结构的反射性能。
附图说明
图1是本发明实施例的金属膜上沉积二氧化硅膜的方法的流程图。
图2是现有技术通过采用腔内温度为300℃的ICP CVD在金膜上沉积的二氧化硅膜在数字显微镜100倍率下的图像。
图3是本发明实施例的在金膜上沉积的二氧化硅膜在数字显微镜100倍率下的图像。
具体实施方式
下面结合附图和实施例，对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明，但不用来限制本发明的范围。
如图1所示，本发明优选实施例的一种金属膜上沉积二氧化硅膜的方法，包括如下步骤：
步骤一：在衬底上生长金属膜；
步骤二：在步骤一所得的金属膜上生长钛膜；
步骤三：在步骤二所得的钛膜上沉积二氧化硅膜。
本实施例通过由下至上依次制作金属膜、钛膜和二氧化硅膜，将钛膜作为过渡层，由于钛膜的透射率高，不影响金属膜的反射性能，且钛膜的粘附性好，可将金属膜和二氧化硅膜很好地粘连在一起，减小因二氧化硅膜和金属膜的粘附性能差而使气体停留在二者之间导致的气泡，使二氧化硅膜的成膜效果好，保证反射结构的反射性能。
在本实施例中，金属膜为金膜。衬底为硅衬底。步骤二所生长的钛膜的厚度为2～5nm，本实施例的钛膜的厚度为3nm。另外，在步骤三中，使用ICP CVD(Inductively coupledplasma chemical vapor deposition equipment，电感耦合等离子体化学气相沉积设备)沉积二氧化硅膜。ICP CVD的腔内温度保持在50～100℃。本实施例的ICP CVD的腔内温度保持在75℃，并且恒温保持5分钟。
ICP CVD是利用的高频电流所产生的诱导电场使电子加速，维持等离子体，可形成大面积、高均匀度和高电子密度的等离子体，快速沉积得到均匀性好、致密性高的优质氮化硅、氧化硅、碳化硅等薄膜。现有技术通常采用高温(300度)沉积二氧化硅，但是若在金膜上采用上述技术，由于温度升高会使金活跃，提高膨胀系数，滞留过多气体在表面，使二氧化硅膜成膜后具有较多气泡，如图2所示，且会导致二氧化硅膜表面不平，无法进行半导体加工。若低温下在金膜上沉积二氧化硅膜，由于粘附性极差，生长的氧化硅会脱落。因此，本实施例在较低温下沉积二氧化硅，避免金和钛活跃且膨胀成鼓包状而导致气泡的产生，且由于具有钛膜作为粘附层，可解决为提高粘附性而提高温度导致的气泡问题。
进一步地，在步骤三中，进行二氧化硅膜沉积前，采用N2O处理钛膜的上表面，可去除钛膜表面的有机物杂质，防止影响二氧化硅膜的成膜质量。本实施例使用N2O处理1分钟，以达到完全去除的效果。并且，在步骤二中，钛膜生成后，对钛膜进行烘干。烘干温度为100～130℃。本实施例采用烘板进行烘干，烘干温度为100℃，烘干时间为5分钟，使钛膜烧结固化。另外，本实施例在步骤一中，采用电子束蒸镀法生长金膜。此外，本实施例的钛膜生长也采用电子束蒸镀法。本实施例的金膜-钛膜-二氧化硅膜的反射结构，反射率可达90％以上。
综上，本发明实施例提供一种金属膜上沉积二氧化硅膜的方法，其通过由下至上依次制作金属膜、钛膜和二氧化硅膜，将钛膜作为过渡层，由于钛膜的透射率高，不影响金属膜的反射性能，且钛膜的粘附性好，可将金属膜和二氧化硅膜很好地粘连在一起，减小因二氧化硅膜和金属膜的粘附性能差而使气体停留在二者之间导致的气泡，使二氧化硅膜的成膜效果好，保证反射结构的反射性能。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和替换，这些改进和替换也应视为本发明的保护范围。

Claims (10)

1.一种金属膜上沉积二氧化硅膜的方法，其特征在于，包括如下步骤：
步骤一：在衬底上生长金属膜；
步骤二：在步骤一所得的金属膜上生长钛膜；
步骤三：在步骤二所得的钛膜上沉积二氧化硅膜。
2.根据权利要求1所述的金属膜上沉积二氧化硅膜的方法，其特征在于，所述金属膜为金膜。
3.根据权利要求1所述的金属膜上沉积二氧化硅膜的方法，其特征在于，步骤二所生长的钛膜的厚度为2～5nm。
4.根据权利要求1所述的金属膜上沉积二氧化硅膜的方法，其特征在于，在步骤三中，使用ICP CVD沉积二氧化硅膜。
5.根据权利要求4所述的金属膜上沉积二氧化硅膜的方法，其特征在于，ICP CVD的腔内温度保持在50～100℃。
6.根据权利要求5所述的金属膜上沉积二氧化硅膜的方法，其特征在于，ICP CVD的腔内温度保持在75℃。
7.根据权利要求1所述的金属膜上沉积二氧化硅膜的方法，其特征在于，在步骤三中，进行二氧化硅膜沉积前，采用N2O处理钛膜的上表面。
8.根据权利要求1所述的金属膜上沉积二氧化硅膜的方法，其特征在于，在步骤二中，钛膜生成后，对钛膜进行烘干。
9.根据权利要求8所述的金属膜上沉积二氧化硅膜的方法，其特征在于，烘干温度为100～130℃。
10.根据权利要求1所述的金属膜上沉积二氧化硅膜的方法，其特征在于，在步骤一中，采用电子束蒸镀法生长金膜。
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