CN113243040A - 用于工件处理室的组成零件的多层涂层 - Google Patents

用于工件处理室的组成零件的多层涂层 Download PDF

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CN113243040A
CN113243040A CN201980082914.8A CN201980082914A CN113243040A CN 113243040 A CN113243040 A CN 113243040A CN 201980082914 A CN201980082914 A CN 201980082914A CN 113243040 A CN113243040 A CN 113243040A
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process chamber
layer
tool
aluminum layer
microns
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保罗·康科拉
拉梅什·钱德拉塞卡拉
安德鲁·H·布伦宁格
托尼·沙琳·考沙尔
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Lam Research Corp
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Lam Research Corp
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    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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Abstract

一种处理工具，其包含用于处理工件的处理室，该处理室包含涂覆有多层保护涂层的至少一个组成零件，该多层保护涂层包含(a)形成于该至少一个组成零件上的铝层，以及(b)形成于该铝层上的陶瓷涂层。在多种实施方案中，多层保护涂层可以在组装处理室之前或至少部分原位地在该处理室中施加至该至少一个组成零件上。

Description

用于工件处理室的组成零件的多层涂层
相关申请的交叉引用
本申请要求于2018年12月13日申请的美国专利申请No.62/779,113的优先权利益，其通过引用合并于此以用于所有目的。
技术领域
本公开内容涉及工件处理工具，更具体而言，涉及施加至这些工具的保护性多层膜，以保护不受热循环、腐蚀所导致的损害以及因暴露于处理室中使用的各种化学物质所导致的潜在故障。
背景技术
例如半导体晶片和平板显示器之类的工件通常是在制造过程中利用各种处理工具进行处理。例如，常见各种沉积工具用来沉积各种薄膜到工件表面上。类似地，例如湿式和/或等离子体蚀刻工具的各种蚀刻工具也常用于从工件表面选择性移除材料层。有多种不同的化学物质用于处理室中。
例如使用等离子体蚀刻工具，工件就通常暴露于富含氯和/或氟的等离子体。在沉积期间，当施加射频(RF)到一或多种反应气体(如硅烷(SiH4)、一氧化二氮(N2O)、氨(NH4)、氮气(N2)等)，等离子体就在处理室中产生。且，利用沉积工具沉积在工件上的材料通常也会累积在暴露于处理室中的表面上。在例行的“干式清洗”处理中，富含氯和/或氟的等离子体可以在处理室中周期性地产生，以除去这些沉积物。类似地，使用蚀刻工具，氯和/或氟常用于从工件中移除所选材料。
蚀刻和沉积工具的处理室都是由各式各样的子组件(例如喷头、工件加热器、工件支架的一部分等)以及各种用于将各个子组件机械式地固定在一起的机械式零件(例如夹具、螺钉、螺栓、弹簧、销、夹子或其他的机械式固定器)所构成。总体而言，这些子组件和/或机械式零件，下文统称为“组成零件”，其特征在于：(1)暴露于处理室中的化学物质的任意金属零件；和/或(2)受到某种类型的机械应力，例如由热循环、摩擦和/或与另一组成零件的接触或摩擦所造成的挠曲，例如在使用夹具、弹簧、销和夹子的情况下。
当这些组成零件暴露于处理室中使用的各种化学物质时，它们会经受腐蚀，这是有问题的。对于例如夹具或弹簧之类的某些类型的部件，腐蚀会对它们的性能产生负面影响，这意味着随着时间的推移，这些零件将不再提供所需规格内的夹持力或弹簧力。另外，腐蚀最终会导致组成零件失效。腐蚀会进一步导致颗粒脱落。这些颗粒会污染正在进行处理的工件，从而不利地影响该处理的产出。
为了减轻了上述腐蚀问题，工件处理工具的厂商和/或他们的供货商常会以陶瓷或铝来包覆组成零件。由于处理室内存在挑战，两种材料都有其缺点。
陶瓷涂层与其下伏组成零件之间的热失配可能会导致这两者以不同速率膨胀及收缩，尤其是在工件处理中通常上会经历的高温热循环期间。其所产生的机械应力可能导致陶瓷破裂和/或失效。第二，陶瓷涂层易经受刮伤、剥落、和/或意外包覆颗粒污染物，所有的这些都可能导致陶瓷涂层失效。下伏的组成零件便会暴露于化学物质而引起腐蚀，最终可能导致组成零件不合乎规格和/或故障。
铝涂层通常利用电镀处理来产生。在电镀期间，通常将组成零件夹持住并同时保持在电镀浴中。在夹持住的地方，通常会导致“支架”痕迹，因为在这些地方会发生最少的电镀或甚至没有。结果，在电镀处理中所捕获的气泡可能在稍后的工件处理期间被释放到处理室内。此外，当暴露于铝化学物质时，铝涂层会长出铝氟化物层。铝氟化物容易产生颗粒。气泡的释放以及颗粒化都是有问题的，因为它们倾向于在工件处理期间污染处理室内的处理环境。
发明内容
本文公开了一种包含处理室的工件处理工具，该处理室具有由多层涂层保护的至少一个组成零件，该多层涂层提供保护以免于受到热循环和暴露于处理室中常用的化学物质所引起的损坏。在一个非排他性的实施方案中，该多层涂层包含(a)在该至少一个组成零件上形成的铝基底层和(b)在下伏的铝层上形成的陶瓷涂层。
多层涂层具有许多优点。相对厚的基底铝层提供对下伏组成零件的机械式保护。结果，在热循环期间，因组成零件和铝层之间的热失配引起的机械应力而造成的损坏或故障被大幅地减轻或完全消除。此外，该相对厚的铝层较不易因刮伤、剥落和/或意外包覆颗粒污染物而失效。另一方面，陶瓷层对于处理室中使用的许多化学物质(例如氟)是相对惰性的。结果，下伏的组成零件便极大地受到保护而不受腐蚀，防止或减轻了组成零件不合规格和/或失效。另外，陶瓷层用来覆盖可能在下伏铝层的电镀处理中出现的支架痕迹，从而防止了工件处理期间气泡的释放。
在非排他性的实施方案中，基底层是厚度为25微米、250微米、在25至250微米范围之间的任意厚度、小于25微米或大于250微米的铝。在还有的其他的实施方案中，该陶瓷涂层为非晶铝氧化物陶瓷层、钇氧化物层或前述两者的组合。在其他实施方案中，陶瓷层的厚度为1微米或更小或10微米或更小。
在额外的实施方案中，处理室包含一或多个组成零件，每个组成零件都由多层涂层保护。该一或多个组成零件可以包含(a)暴露于处理室中的上述化学物质的任意金属零件或零件；和/或(2)受到某种类型的机械应力的作用，例如由热循环、与另一机械零件的接触或摩擦所造成的挠曲。这样的组成零件可以包含但不限于广泛组合的子组件(例如喷头、工件加热器、工件保持器的部分等)和/或各种机械零件，例如夹具、螺钉、螺栓、弹簧、销、夹子和其他机械式固定器。
在其他实施方案中，可以以多种不同方式组装工件处理工具的处理室。在第一实施方案中，首先将组成零件以下列方式涂覆多层涂层：(a)电镀铝层，以及(b)使用原子层沉积(ALD)工艺形成陶瓷层。一旦涂覆完成，该组成零件便可用于组装处理室。
在可以用沉积工具实施的替代性实施方案中，该组成零件是(a)首先使用电镀处理将铝层涂覆于其上。一旦涂覆了铝层，该组成零件就用于组装处理室。此后，该组成零件就(b)使用沉积工艺在处理室中原位涂覆陶瓷层。
工件处理工具可以是具有用于处理工件的处理室中的任何类型。在非排他性的实施方案中，该工具可以是任何类型的沉积工具、或湿式或干式的蚀刻工具。工件可以包含半导体晶片、平面显示器或任何需要处理的其他类型工件。
附图说明
通过参考下面描述以及附图，将最好地理解本申请及其优点，其中：
图1A和1B为示例性沉积及蚀刻工具的处理室图，其用于根据本发明的非排他性的实施方案中的工件处理。
图2A-2D为各种组成零件的说明，这些组成零件设置于根据本发明的非排他性的实施方案的处理室中。
图3A-3B为根据本发明的非排他性的实施方案中施加至组成零件上的各个多层涂层的横截面图。
图4A和4B为流程图，其说明根据本发明的非排他性的实施方案中的组装工件处理工具的步骤。
在附图中，有时使用相似的附图标记来指称相似的结构元件。但应理解附图中的描绘为示意性的，且不一定按比例绘制。
具体实施方式
现在将参考如附图所示的一些非排他性的实施方案来详细描述本申请。在以下描述中，阐述了许多具体细节以便提供对本公开内容的透彻理解。然而对于本领域技术人员而言，显而易见的是可以在没有这些具体细节中的一些或全部的情况下实施本公开内容。在其他情况下，并未详细描述公知的处理步骤和/或结构，以免不必要地模糊本公开内容。
图1A和图1B分别是示例性的沉积和蚀刻工件处理工具的处理室的图。
参照图1A，其显示了示例性化学气相沉积(CVD)工具10的图。CVD工具10包含处理室12、喷头14、用于支撑并定位待处理工件18的工件保持器16、射频(RF)产生器20。在诸多实施方案中，CVD工具可以是等离子体增强(PECVD)、低压(LPCVD)、超高真空(UHVCVD)、原子层沉积(ALD)、等离子体增强原子层沉积(PEALD)或任何其他类型的CVD工具。
例如硅烷(SiH4)、一氧化二氮(N2O)、氨(NH4)和/或氮气(N2)之类的反应气体通过喷头14而供应至处理室12中。在喷头14中，通过一或多个气室(未示出)将气体分配到室12中的待处理工件18的表面上方的一般区域。接着由RF产生器20所产生的RF电势被施加到喷头14上的电极(未示出)。(RF电势也可能被施加到工件保持器18)。该RF电势会在处理室12内产生等离子体22。在等离子体22中，充电的电子从反应气体离子化或解离(即“破裂”)，产生化学性反应自由基。当这些自由基反应时，就会在工件18上沉积并形成薄膜。
在工件处理期间，处理室12通常会经历热循环。热循环的范围由若干因素来决定，其包含工件的类型、使用的特定化学物质及待沉积的材料、所需的沉积速率等。也可以考虑的其他因素有为了防止损坏膜的热预算、膜的物理和化学性质、以及当可行时使用较低温处理的一般性偏好。
例如，在处理室12内使用铝而不是陶瓷组成零件通常成本更低。然而使用铝，在温度超过450℃时易于弱化铝或以其他方式不利地影响铝。因此，在某种程度上，铝部件的使用会使得热循环的上限限制在约450℃。在另一方面，对于升高的温度，陶瓷比铝的承受度更好。如此，使用陶瓷的热循环上限可以更高。因此，应当理解，给定的热循环的温度范围可以大幅地变化，例如从20℃至450℃或甚至从20℃至800℃中的任何温度，具体取决于各种因素和上述其他考虑因素。这些下限和上限温度值仅仅是示例性，而不应被解释为限制性。可以使用更低或更高的温度值。
如前所述，沉积在工件18上的材料也会不经意地沉积在处理室12内的各个其他表面上。为去除这些堆积的沉积物，通常会对工具10进行定期“干式清洗”程序，其中将氯和/或氟化学物质引入室12，并且施加RF功率以产生等离子体。作为响应，沉积物被蚀刻或以其他方式从室12内的表面去除。一旦沉积物被实质上去除，工具10就接着再次以如上讨论的方式对工件18进行处理。
参照图1B，其显示出示例性等离子体蚀刻工具30的图。等离子体蚀刻工具30包含处理室32、功率电极38以及耦合到功率电极38的RF电源40。在操作过程中，例如氯和/或氟的蚀刻化学物质被引入到处理室32中，由RF电源40施加RF功率至功率电极38，而产生等离子体42。等离子体42会蚀刻掉工件36表面上的暴露材料，这在本领域中是众所周知的。
处理工具30的处理室32还会经受热循环。在工件蚀刻期间，室32内部的温度通常会升高。热循环可以广泛地变化，并且还取决于多种因素，例如工件的类型、被蚀刻的材料类型、蚀刻室的组成零件的材料等。例如在非排他性的实施方案中，热循环的上限可以是450℃或高达800℃。再一次，应理解到这些值是示例性的，而不应被解释为限制性的。可以使用更低或更高的温度。
沉积工具10和蚀刻工具30的处理室10/30各自包含各式各样的组成零件。如本文所使用的，术语“组成零件”旨在广义地解释为是指(a)暴露于处理室10/30中的化学物质的任何金属零件，和/或(b)受到某种类型的机械应力的作用，例如由热循环、与另一机械零件的接触或摩擦所造成的挠曲。这样的组成零件可以包含但不限于各种各样的子组件(例如喷头、工件加热器(未显示)、工件保持器的部分等)和/或各种机械零件，例如夹具、螺钉、螺栓、弹簧、销、夹子和其他机械式固定器。在各个实施方案中，该组成零件可以由各种金属和/或合金制成，包含例如铝、不锈钢、含铁合金、英可镍718(Inconel 718)、Nonel、镍基合金90(Nimonic90)、Waspaloy、A286等。
图2A至图2D为各个组成零件的示图，其根据本发明的非排他性的实施方案中而设置在工件处理工具的处理室中。在这些示例中，图2A显示了负载分配垫圈。图2B显示了保持环或“扣”环。图2C显示了以轴承为中心的负载分配垫圈。最后，图2D显示了波形弹簧的不同视图。这些说明仅是示例性的，不应在任何方面解释为限制性的。在实际的实施方案中，可以被多层保护涂层覆盖的组成零件数量和类型太多，以至于无法在这里实际地说明。
为了解决上述的组成零件的腐蚀、劣化以及潜在故障，本申请人提出使用多层涂层。在非排他性的实施方案中，多层涂层包含(a)在该至少一个组成零件上形成的铝基底层和(b)在下伏的铝层上形成的陶瓷涂层。
在一非排他性的实施方案中，基底铝层具有25微米的厚度，且通过电镀处理形成。陶瓷层的厚度为1微米或更小，并且由原子层沉积(ALD)工艺所形成。陶瓷涂层的示例可以包含但不限于非晶铝氧化物陶瓷层(Al2O3)、钇氧化物层(Y2O3)、或这两者的叠层。应当理解，关于该实施方案所描述的多层涂层的材料和尺寸是示例性的，且不应解释为限制性的。可以使用各种不同材料和厚度的多层涂层，并根据其机械性能和/或针对不同化学物质的惰性来选择。例如，铝基底层的厚度可以小于25微米、在25至250微米之间、或大于250微米。由于ALD的缓慢沉积速率以及沉积膜中存在的应力，因此通常使用的陶瓷层的厚度小于1微米。然而，同样，这不应被解释为限制性的。可以使用例如10微米或更厚的层。
多层涂层具有许多优点。相对厚的基底铝层提供对下伏的组成零件的机械式保护。结果，在热循环期间，因组成零件和铝层之间的热失配所引起的机械应力造成的故障被大幅地减轻或完全消除。此外，相对厚的铝层较不易因刮伤、剥落和/或意外包覆在颗粒污染物上而失效。另一方面，陶瓷层对于例如氟之类的多种化学物质是惰性的，并且提供对抗这些化学物质的保护。陶瓷层保护了下伏的组成零件不受腐蚀并且防止了下伏铝的颗粒化。另外，陶瓷层覆盖了在铝层的电镀处理期间可能出现的支架痕迹，从而防止了被捕获的气泡的释放。
图3A-3C是根据本发明的非排他性的实施方案的各个多层涂层的横截面图，该多层涂层施加于示例性组成零件50上。
在图3A中，铝层52形成在组成零件50的表面上。在多种实施方案中，铝层52是通过电镀处理而形成的，且其具有至少25微米的厚度。在替代性的实施方案中，铝层的厚度可以在25至250微米、小于25微米或大于250微米的范围内。另外，铝的纯度水平也可以变化。在一些实施方案中，可以使用高纯度的铝，而在其他实施方案中，可以使用较低纯度的铝。
在图3B中，陶瓷涂层54形成在下伏的铝层52上。在多种实施方案中，陶瓷涂层54的厚度为1微米或更小，且使用原子层沉积(ALD)工艺所形成。陶瓷涂层54的示例包括但不限于非晶铝氧化物陶瓷层、钇氧化物层、或这两者的叠层。在替代性的实施方案中，可以使用任何沉积工艺来形成陶瓷涂层54，且可以包含除了本文列出的那些之外的其他陶瓷材料。另外，厚度可以变化，例如从1微米或更小、10微米或更小、或大于10微米。
图4A和图4B为流程图，说明根据本发明的非排他性的实施方案中用于组装工件处理工具的步骤。
参照图4A，显示出一流程图60，其中在组装工具的处理室之前进行组成零件的多层涂层。
初始步骤62涉及使用任一上述实施方案而对一或多个组成零件施加多层涂层。换句话说，该一或多个组成零件至少涂覆有(a)在至少一个组成零件50上形成的铝基底层52，以及(b)在下伏的铝层上形成的陶瓷涂层54。再次，本文所用的术语“组成零件”意在广义地解释且包含但不限于任何上面列出的可能经受机械应力作用和/或暴露于处理室内的化学物质的组成零件。
在步骤64中，至少部分地使用具有多层涂层的组成零件以及其他未涂覆的零件和/或子组件来组装工具的处理室。此后，如本领域所公知的那样，对处理室和工具进行测试并使其可操作。
在步骤66中，使用该工具处理例如半导体晶片、平板显示器等工件。在多种实施方案中，该工具可以是用于将薄膜沉积到工件上的沉积工具或者可以是用于选择性地从工件上去除材料的蚀刻工具。
参照图4B，显示了流程图70，其中，组成零件的多层涂层被部分地在工具的处理室的组装之前发生，且在已组装了处理工具并且可操作之后部分地原位发生。对于该实施方案，仅可以使用沉积工具。
初始步骤72涉及使用任一上述实施方案而对一或多个组成零件以(a)铝基底层52进行部分涂覆。
在步骤74中，使用仅涂覆有铝基底层52的一或多个组成零件来组装工具的处理室。此后，如本领域中所公知的那样，对工具进行测试并使其可操作。
在步骤76中，(b)的陶瓷涂层54原位形成于该工具的处理室中。例如，利用原子层沉积(ALD)工具，使用任一上述实施方案而将陶瓷层54沉积到铝基底层52上。对于该实施方案，应当理解，处理室内的其他暴露表面也可能被涂覆陶瓷材料，除非采取步骤来遮盖或以其他方式防止在这些表面上发生沉积。
最后，在步骤78中，使用该工具来处理工件。
如图4B所示，一个值得注意的优点是能够不时地在处理室中原位重新涂覆陶瓷层54。由于处理工具用于处理工件，因此陶瓷层54可能会因反复暴露于各种化学物质而劣化。有了原位形成陶瓷涂层54的能力，该一或多个组成零件可以周期性地重新涂覆而将其当作日常维护程序的一部分，从而不需要拆卸处理室和/或工具。
应该理解的是，尽管本文所描述的实施方案很大幅度上与沉积和蚀刻工具有关，但这绝不应解释为限制性的。相反，此处所描述的目标可以与任何类型的工件处理工具一起使用，而与工件的类型或工件的处理方式无关。
应理解，本文提供的实施方案仅是示例性的，不应在任何方面解释为限制性的。虽然此处仅详细描述几个实施方案，但是应当理解的是，本申请可以在不脱离本文所提供的公开内容的精神或范围的情况下以许多其他形式来实现。因此，本实施方案应被认为是说明性的而不是限制性的，且不限于此处所给出的细节，而是可以在所附权利要求的范围和等同方案中进行修改。

Claims (19)

1.一种包含用于处理工件的处理室的处理工具，所述处理室包含具有多层涂层的至少一个组成零件，所述多层涂层包含(a)形成于所述至少一个组成零件上的铝层，以及(b)形成于所述铝层上的陶瓷涂层。
2.根据权利要求1所述的处理工具，其中所述陶瓷涂层为非晶铝氧化物陶瓷层。
3.根据权利要求1所述的处理工具，其中所述陶瓷涂层为钇氧化物层。
4.根据权利要求1所述的处理工具，其中所述陶瓷涂层为非晶铝氧化物陶瓷与钇氧化物的叠层。
5.根据权利要求1所述的处理工具，其中所述陶瓷涂层的厚度为以下厚度中的一种：
(a)1微米或更薄；
(b)10微米或更薄；或
(c)超过1微米。
6.根据权利要求1所述的处理工具，其中所述铝层的厚度为以下厚度中的一种：
(a)小于25微米；
(b)25微米或更厚；
(c)25微米至250微米；或
(d)超过250微米。
7.根据权利要求1所述的处理工具，其中所述铝层具有25微米或更厚的厚度，且所述陶瓷层具有1微米或更薄的厚度。
8.根据权利要求1所述的处理工具，其中所述陶瓷涂层会覆盖在电镀期间产生所述铝层时所形成的支架痕迹。
9.根据权利要求1所述的处理工具，其中所述组成零件为暴露于所述处理室中的化学物质且受到机械应力作用的任意金属零件。
10.根据权利要求1所述的处理工具，其中所述组成零件选自包含下述项的群组：所述处理室内的子组件、所述处理室内的喷头、配置于所述处理室中的工件加热器、配置于所述处理室中的工件保持器的一部分、或配置于所述处理室中的夹具、螺钉、螺栓、弹簧、垫圈、销、夹子或机械式固定器。
11.根据权利要求1所述的处理工具，其中所述处理工具为沉积工具或蚀刻工具。
12.一种组装工件处理工具的方法，其包含利用具有多层涂层的至少一个组成零件来组装处理室，所述多层涂层包含(a)形成于所述至少一个组成零件上的铝层，以及(b)形成于所述铝层上的陶瓷涂层。
13.根据权利要求12所述的方法，其还包含：
电镀所述至少一个组成零件，以形成所述铝层，所述铝层在所述至少一个组成零件上形成；以及
在所述电镀之后，沉积所述陶瓷涂层，所述陶瓷涂层在所述铝层上形成，
其中所述电镀和所述沉积是在使用所述组成零件组装所述处理室之前执行。
14.根据权利要求12所述的方法，其还包含：
电镀所述至少一个组成零件，以形成所述铝层，所述铝层在所述至少一个组成零件上形成；
利用具有所述铝层的所述组成零件来组装所述处理室；以及
在所述处理室的所述组装之后，在所述处理室中原位沉积所述陶瓷涂层，所述陶瓷涂层形成于所述铝层上。
15.根据权利要求12所述的方法，其中所述铝层的厚度为以下厚度中的一种：
(a)25至250微米；
(b)25微米或更厚；
(c)小于25微米；或
(d)超过250微米。
16.根据权利要求12所述的方法，其中所述陶瓷涂层包含以下项中的一项：
(c)非晶铝氧化物陶瓷层；
(d)钇氧化物层；
(e)非晶铝氧化物陶瓷与钇氧化物的叠层。
17.根据权利要求12所述的方法，其中所述陶瓷涂层的厚度为以下厚度中的一种：
(a)1微米或更薄；
(b)10微米或更薄；或
(c)超过1微米。
18.根据权利要求12所述的方法，其中所述组成零件为处于以下情形中中的一种的任意金属零件：
(a)暴露于所述处理室中的化学物质；
(b)受到机械应力作用；或
(a)与(b)两者。
19.根据权利要求12所述的方法，其中所述处理工具为沉积工具或蚀刻工具。
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