JP7477498B2 - 取り外し可能なサーマルレベラー - Google Patents
取り外し可能なサーマルレベラー Download PDFInfo
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- JP7477498B2 JP7477498B2 JP2021504763A JP2021504763A JP7477498B2 JP 7477498 B2 JP7477498 B2 JP 7477498B2 JP 2021504763 A JP2021504763 A JP 2021504763A JP 2021504763 A JP2021504763 A JP 2021504763A JP 7477498 B2 JP7477498 B2 JP 7477498B2
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- 239000000758 substrate Substances 0.000 claims description 45
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 30
- 229910002804 graphite Inorganic materials 0.000 claims description 23
- 239000010439 graphite Substances 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910010293 ceramic material Inorganic materials 0.000 claims description 6
- 229910021389 graphene Inorganic materials 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 150000001247 metal acetylides Chemical class 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 4
- 229910052723 transition metal Inorganic materials 0.000 claims description 4
- 150000003624 transition metals Chemical class 0.000 claims description 4
- 229910001374 Invar Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- SOWHJXWFLFBSIK-UHFFFAOYSA-N aluminum beryllium Chemical compound [Be].[Al] SOWHJXWFLFBSIK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052790 beryllium Inorganic materials 0.000 claims description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 3
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 239000011133 lead Substances 0.000 claims description 3
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 229910000851 Alloy steel Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 19
- 235000012431 wafers Nutrition 0.000 description 19
- 230000008569 process Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
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- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 101000760817 Homo sapiens Macrophage-capping protein Proteins 0.000 description 2
- 102100024573 Macrophage-capping protein Human genes 0.000 description 2
- 238000010923 batch production Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- -1 O-rings Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000013500 performance material Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000000581 reactive spray deposition Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
- F28F3/02—Elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with recesses, with corrugations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/345—Arrangements for heating
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Carbon And Carbon Compounds (AREA)
Description
本出願は、2018年8月1日に出願された「取り外し可能なサーマルレベラー」と題された米国仮特許出願第62/713,169号の優先権および利益を主張し、その開示は、参照によりその全体が本明細書に組み込まれる。
Claims (18)
- カバープレートに解除可能に結合されたサーマルレベラーとベースプレートを含み、ここでサーマルレベラーがカバープレートとベースプレートとの間に配置されていて、且つ、ベースプレートと取り外し可能に結合されている装置であって、
(i)ベースプレートは、下面、ベースプレートの周囲に延在する1つまたは複数の側壁、および1つまたは複数の側壁の間に画定された開口部を含み、サーマルレベラーは開口部内に配置されており、そして1つまたは複数の側壁は1つまたは複数の側壁の上端に隣接するねじ付き表面を有し、カバープレートは、ベースプレートの開口部内に収まるサイズであり、そしてベースプレートのねじ付き表面に係合するねじ付き側面を含み、
(ii)ベースプレートは、上面、下面、およびねじ付き側面を含み、上面はサーマルレベラーを支持し、カバープレートは、上面と、カバープレートの上面から下向きに延在し、その周囲の周りに延在する1つまたは複数の側壁と、1つまたは複数の側壁との間に画定され、サーマルレベラーおよびベースプレートを取り囲むサイズの開口部とを含み、カバープレートの1つまたは複数の側壁は、ベースプレートのねじ付き側面に係合するねじ付き表面を含み、又は
(iii)カバープレートは、1つまたは複数の開口部を含み、サーマルレベラーは、カバープレートの1つまたは複数の開口部と位置合わせされた1つまたは複数の開口部を含み、ベースプレートは、サーマルレベラーの1つまたは複数の開口部と位置合わせされた1つまたは複数の凹部を含み、カバープレート、サーマルレベラー、およびベースプレートは、カバープレートおよびサーマルレベラーの1つまたは複数の開口部およびベースプレートの凹部を通して配置された留め具を介して互いに解除可能に接続されている、
装置。 - サーマルレベラーは、クランプ、ボルト、ねじ山、カムロック、保持溝、保持リング、ばね、真空、静電力、電磁力、磁力、接着剤、はんだ、またはペーストを介してカバープレートに解除可能に結合されている、請求項1に記載の装置。
- (iii)において、留め具の少なくとも1つは、ベースプレートの1つまたは複数の凹部の1つにロックするピンである、請求項1に記載の装置。
- (iii)において、ベースプレートの1つまたは複数の凹部の少なくとも1つは、ねじ付き表面を有し、そして留め具の少なくとも1つは、ねじ付き表面を有する少なくとも1つまたは複数の凹部とのねじ係合に適したねじ付き留め具である、請求項1または3に記載の装置。
- サーマルレベラーの上面は凹部を含み、そしてカバープレートの下面は、サーマルレベラーの上面の凹部と位置合わせされ、そして嵌合するサイズの突起を含む、請求項1から4のいずれか一項に記載の装置。
- サーマルレベラーは、熱分解グラファイトを含む、請求項1から5のいずれか一項に記載の装置。
- サーマルレベラーは、上部シートと下部シートの間に配置された熱分解グラファイトのシートを含む、請求項6に記載の装置。
- サーマルレベラーはカバー層でカプセル化されている、請求項6に記載の装置。
- 上部シート、下部シート、またはカバー層は、金属またはセラミック材料から独立して選択される、請求項7または8に記載の装置。
- 上部シート、下部シート、またはカバー層は、アルミニウム、銅、銀、金、ニッケル、ベリリウム、スズ、鉛、鋼、鋼合金、銅-タングステン、銅-モリブデン、インバー、アルミニウム-ベリリウム、スズ-鉛;B、Al、Si、Ga、Y、耐火性硬質金属、遷移金属からなる群から選択される元素の酸化物、窒化物、炭化物、炭窒化物または酸窒化物から独立して選択される、請求項9に記載の装置。
- サーマルレベラーは、熱分解グラファイトの複数のシートを含む、請求項1から10のいずれか一項に記載の装置。
- 熱分解グラファイトの複数のシートは、グラフェン基底面が基板表面に平行または垂直である、請求項11に記載の装置。
- 複数のサーマルレベラーを含む、請求項1から12のいずれか一項に記載の装置。
- 複数のサーマルレベラーは、基板表面に平行または垂直なグラフェン基底面を有する熱熱分解グラファイトを含む、請求項13に記載の装置。
- ベースプレートがヒーターおよび/またはクーラーを含む、請求項1から14のいずれか一項に記載の装置。
- 装置がその中に配置された電極を含む、請求項1から15のいずれか一項に記載の装置。
- 請求項1から16のいずれか一項に記載のカバープレートの上面に配置された基板を加熱または冷却することを含む、基板を加熱または冷却するための方法。
- 基板を終点まで加熱すること、
装置から基板を取り出すこと、
サーマルレベラーからカバープレートを解除すること、
新しいカバープレートを提供し、それをサーマルレベラーに解除可能に接続すること、および
装置に第2の基板を提供し、そして第2の基板を加熱すること、を含む請求項17に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862713169P | 2018-08-01 | 2018-08-01 | |
US62/713,169 | 2018-08-01 | ||
PCT/US2019/043579 WO2020028156A1 (en) | 2018-08-01 | 2019-07-26 | Detachable thermal leveler |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021533560A JP2021533560A (ja) | 2021-12-02 |
JP7477498B2 true JP7477498B2 (ja) | 2024-05-01 |
Family
ID=67587952
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021504763A Active JP7477498B2 (ja) | 2018-08-01 | 2019-07-26 | 取り外し可能なサーマルレベラー |
Country Status (6)
Country | Link |
---|---|
US (1) | US20210242049A1 (ja) |
EP (1) | EP3830864B1 (ja) |
JP (1) | JP7477498B2 (ja) |
KR (1) | KR20210035204A (ja) |
CN (1) | CN112789714A (ja) |
WO (1) | WO2020028156A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022046830A1 (en) * | 2020-08-25 | 2022-03-03 | Momentive Performance Materials Quartz, Inc. | Graphite based thermal leveler with high thermal conductivity material encapsulated therein |
KR102643286B1 (ko) * | 2022-04-21 | 2024-03-05 | 세메스 주식회사 | 지지구조체, 기판지지장치 및 기판처리설비 |
Citations (12)
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US20040118551A1 (en) | 2002-12-20 | 2004-06-24 | Saint-Gobain Performance Plastics Corporation | Thermal interface material and methods for assembling and operating devices using such material |
JP2004296482A (ja) | 2003-03-25 | 2004-10-21 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
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- 2019-07-26 WO PCT/US2019/043579 patent/WO2020028156A1/en unknown
- 2019-07-26 KR KR1020217003493A patent/KR20210035204A/ko not_active Application Discontinuation
- 2019-07-26 CN CN201980064328.0A patent/CN112789714A/zh active Pending
- 2019-07-26 EP EP19752602.3A patent/EP3830864B1/en active Active
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JP2008095171A (ja) | 2006-10-08 | 2008-04-24 | Momentive Performance Materials Inc | 伝熱複合材、関連するデバイス及び方法 |
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Also Published As
Publication number | Publication date |
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EP3830864B1 (en) | 2024-01-03 |
KR20210035204A (ko) | 2021-03-31 |
WO2020028156A1 (en) | 2020-02-06 |
EP3830864A1 (en) | 2021-06-09 |
CN112789714A (zh) | 2021-05-11 |
US20210242049A1 (en) | 2021-08-05 |
JP2021533560A (ja) | 2021-12-02 |
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