CN113206178B - Ohmic contact structure of light emitting diode and manufacturing method thereof - Google Patents
Ohmic contact structure of light emitting diode and manufacturing method thereof Download PDFInfo
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- CN113206178B CN113206178B CN202110351781.9A CN202110351781A CN113206178B CN 113206178 B CN113206178 B CN 113206178B CN 202110351781 A CN202110351781 A CN 202110351781A CN 113206178 B CN113206178 B CN 113206178B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000004020 conductor Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- SAOPTAQUONRHEV-UHFFFAOYSA-N gold zinc Chemical compound [Zn].[Au] SAOPTAQUONRHEV-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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Abstract
The application discloses ohmic contact structure of emitting diode and manufacturing method thereof, this ohmic contact structure includes: a substrate; an epitaxial layer on the substrate; a contact layer on the epitaxial layer; and a plurality of ohmic contact structures covering part of the surface of the contact layer, wherein each ohmic contact structure extends into the contact layer through the surface of the contact layer, and each ohmic contact structure and the contact layer form ohmic contact. The ohmic contact structure and the ohmic contact surface of the contact layer extend to the inside of the contact layer, so that the area of the ohmic contact surface is increased, the on-resistance of the light-emitting diode is reduced, and the purpose of reducing energy consumption is achieved.
Description
Technical Field
The present disclosure relates to the field of semiconductor manufacturing technologies, and more particularly, to an ohmic contact structure of a light emitting diode and a method for manufacturing the ohmic contact structure.
Background
Light Emitting Diodes (LEDs) have been used in a wide variety of applications in everyday life. The market demand for leds is low power consumption, high brightness, high reliability, wherein low power consumption and high brightness are two main parameters corresponding to the voltage and brightness of the leds. In the actual manufacturing of the light emitting diode, it is difficult to satisfy both the low power consumption and the high brightness at the same time, which is a consistent and uniform goal of the light emitting diode manufacturing industry.
Therefore, it is desirable to further optimize the ohmic contact structure of the light emitting diode and the method of manufacturing the same so that the voltage of the light emitting diode can be reduced without losing the light emitting luminance thereof.
Disclosure of Invention
In view of the foregoing problems, an object of the present invention is to provide an ohmic contact structure of a light emitting diode and a method for manufacturing the same, in which an ohmic contact surface between the ohmic contact structure and a contact layer is extended into the contact layer, so as to increase an area of the ohmic contact surface, reduce an on-resistance of the light emitting diode, and further reduce power consumption.
According to an aspect of an embodiment of the present invention, there is provided an ohmic contact structure of a light emitting diode, including: a substrate; an epitaxial layer on the substrate; a contact layer on the epitaxial layer; and the ohmic contact structures cover part of the surface of the contact layer, each ohmic contact structure extends into the contact layer through the surface of the contact layer, and each ohmic contact structure and the contact layer form ohmic contact.
Optionally, the plurality of ohmic contact structures are arranged according to a preset rule.
Optionally, the arranging according to the preset rule includes arranging according to an equal interval.
Optionally, each ohmic contact structure comprises a first portion on the contact layer and a second portion in the contact layer, and for each ohmic contact structure, the first portion covers a contact surface of the second portion and the contact layer.
Optionally, the cross-sectional shape of the second portion of each ohmic contact structure is a shape that is wide at the top and narrow at the bottom in the thickness direction of the contact layer.
Optionally, the cross-sectional shape of the second portion of each ohmic contact structure along the thickness direction of the contact layer is the same width up and down.
Optionally, the second part of the ohmic contact structure is 2-3 um deep.
Optionally, a cross-sectional shape of the ohmic contact structure in a direction parallel to a surface of the contact layer is at least one of circular, elliptical, and polygonal.
Optionally, the cross section of the ohmic contact structure is square along a direction parallel to the surface of the contact layer, and the side length of the square is 4-5 um.
Optionally, a cross-sectional area of the first portion of the ohmic contact structure in a direction parallel to a surface of the contact layer accounts for 3% to 9% of an area of a light emitting region of the light emitting diode.
Optionally, the material of the contact layer includes at least one of GaP, AlGaAs and AlGaInP, and the doping impurity of the contact layer is a P-type impurity.
According to another aspect of the embodiments of the present invention, there is provided a method for manufacturing an ohmic contact structure of a light emitting diode, including: forming an epitaxial layer on a substrate; forming a contact layer on the epitaxial layer; and forming a plurality of ohmic contact structures covering part of the surface of the contact layer, wherein each ohmic contact structure extends into the contact layer through the surface of the contact layer, and each ohmic contact structure and the contact layer form ohmic contact.
Optionally, the ohmic contact structures are arranged according to a preset rule.
Optionally, the arranging according to the preset rule includes arranging according to an equal interval.
Optionally, the step of forming a plurality of ohmic contact structures comprises: forming a first mask on the contact layer, the first mask having a first via; etching the contact layer through the first through hole to form a contact hole; and filling a conductive material in the contact hole to form the ohmic contact structure.
Optionally, before filling the conductive material, the step of forming a plurality of ohmic contact structures further comprises: removing the first mask; and forming a second mask on the contact layer, wherein the second mask is provided with a second through hole, the position of the second through hole corresponds to the position of the first through hole, the aperture of the second through hole is larger than that of the first through hole, the conductive material is further filled in the second through hole, the conductive material filled in the second through hole is positioned on the contact layer and serves as a first part of the ohmic contact structure, the conductive material filled in the contact hole is positioned in the contact layer and serves as a second part of the ohmic contact structure, and for each ohmic contact structure, the first part covers the contact surface of the second part and the contact layer.
Optionally, the difference between the diameters of the second through hole and the first through hole is 2-3 um.
Optionally, after forming the plurality of ohmic contact structures, the manufacturing method further comprises: and annealing the contact layer and the ohmic contact structure.
Optionally, the cross-sectional shape of the second portion of each ohmic contact structure is a shape that is wide at the top and narrow at the bottom in the thickness direction of the contact layer.
Optionally, the cross-sectional shape of the second portion of each ohmic contact structure along the thickness direction of the contact layer is the same width up and down.
Optionally, the second part of the ohmic contact structure is 2-3 um deep.
Optionally, a cross-sectional shape of the ohmic contact structure in a direction parallel to a surface of the contact layer is at least one of circular, elliptical, and polygonal.
Optionally, the cross section of the ohmic contact structure is square along a direction parallel to the surface of the contact layer, and the side length of the square is 4-5 um.
Optionally, a cross-sectional area of the first portion of the ohmic contact structure in a direction parallel to a surface of the contact layer accounts for 3% to 9% of an area of a light emitting region of the light emitting diode.
Optionally, the material of the contact layer includes at least one of GaP, AlGaAs and AlGaInP, and the doping impurity of the contact layer is a P-type impurity.
According to the ohmic contact structure of the light emitting diode and the manufacturing method thereof provided by the embodiment of the invention, the ohmic contact surface of the ohmic contact structure and the ohmic contact layer longitudinally extends to the inside of the contact layer, so that the area of the ohmic contact surface is increased, the on-resistance of the light emitting diode is reduced, and the purposes of reducing voltage and reducing energy consumption are further achieved.
Furthermore, each ohmic contact structure comprises a first part and a second part, the first part is located on the contact layer, and for each ohmic contact structure, the first part covers the contact surface of the second part and the contact layer, so that the ohmic contact surface is shielded by the first part, and in the subsequent process, other substances cannot be filled in the ohmic contact surface, and the ohmic contact performance is guaranteed.
In addition, the ohmic contact surface longitudinally extends into the contact layer, so that two-dimensional ohmic contact is converted into three-dimensional ohmic contact, the ohmic contact area is increased, the occupied light emitting area is not increased or even reduced, and the light intensity of the light emitting diode can be increased while the voltage is reduced.
Drawings
To more clearly illustrate the technical solutions of the embodiments of the present application, the drawings of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description only relate to some embodiments of the present application and are not limiting on the present application.
Fig. 1 is a schematic view illustrating an ohmic contact structure of a light emitting diode in the related art.
Fig. 2a to 6 are block diagrams illustrating a method of fabricating an ohmic contact structure of a light emitting diode according to a first embodiment of the present invention at some stages.
Fig. 7 is a schematic view showing an ohmic contact structure of a light emitting diode according to a second embodiment of the present invention.
Fig. 8 is a schematic view showing an ohmic contact structure of a light emitting diode according to a third embodiment of the present invention.
Detailed Description
The invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by like reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale. Moreover, certain well-known elements may not be shown. For simplicity, the semiconductor structure obtained after several steps can be described in one figure.
It will be understood that when a layer or region is referred to as being "on" or "over" another layer or region in describing the structure of the device, it can be directly on the other layer or region or intervening layers or regions may also be present. And, if the device is turned over, that layer, region, or regions would be "under" or "beneath" another layer, region, or regions.
If for the purpose of describing the situation directly on another layer, another area, the expressions "directly on … …" or "on … … and adjacent thereto" will be used herein.
In the following description, numerous specific details of the invention, such as structure, materials, dimensions, processing techniques and techniques of the devices are described in order to provide a more thorough understanding of the invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details.
The present invention may be embodied in various forms, some examples of which are described below.
Fig. 1 is a schematic view illustrating an ohmic contact structure of a light emitting diode in the related art.
As shown in fig. 1, in the related art, the ohmic contact structure of the vertical type light emitting diode includes: a substrate 101, an epitaxial layer 110, a contact layer 120 of first/second conductive type, and a plurality of ohmic contact structures 130. Wherein the epitaxial layer 110 is located on the substrate 101, the contact layer 120 is located on the epitaxial layer 110, and the plurality of ohmic contact structures 130 are located on the surface of the contact layer 120.
In the related art, the epitaxial layer 110 is located between the substrate 101 and the contact layer 120, light is generated in the epitaxial layer 110, the contact layer 120 serves as a light channel for light to enter and exit, and the ohmic contact structures 130 on the surface of the contact layer 120 block the light from exiting, so that the ohmic contact structures 130 occupy the area of the light-emitting surface of the light-emitting diode. In order to reduce the on-resistance of the light emitting diode, the plurality of ohmic contact structures 130 need to form ohmic contacts with the contact layer 120, and therefore the contact layer 120 needs to use a highly doped semiconductor material. The larger the area of the ohmic contact formed on the surface of the contact layer 120, the smaller the on-resistance, and the lower the voltage of the light emitting diode, thereby reducing power consumption. However, the larger the area of the ohmic contact formed on the surface of the contact layer 120, the larger the light emitting area occupied by the ohmic contact structure 130, and the smaller the light emitting amount, and thus the luminous intensity.
In view of the above technical problems, embodiments of the present invention provide a method for manufacturing an ohmic contact structure of a light emitting diode, which will be described in detail with reference to fig. 2a to 6.
As shown in fig. 2a, an epitaxial layer 210 is formed on a substrate 201, and a contact layer 220 is formed on the epitaxial layer 210.
In the present embodiment, the substrate 201 is a GaAs substrate. In order to form an ohmic contact in a subsequent step, the doping concentration of the contact layer 220 needs to be increased. The material of the contact layer 220 is, for example, highly doped GaP, AlGaAs, AlGaInP, etc., and the doping impurity is, for example, a P-type impurity. Of course, other arrangements of the materials and doping types of the substrate 201, the epitaxial layer 210 and the contact layer 220 may be performed by those skilled in the art according to the requirement.
Further, a first mask 10 is formed on the contact layer 220, as shown in fig. 2 a.
In this step, for example, a photoresist is first coated on the surface of the contact layer 220, and then a first mask 10 having a first through hole 11 is formed by using a photolithography process.
In the present embodiment, the diameter of the first through hole 11 is d1, and the shape of the first through hole 11 is, for example, circular, oval, or polygonal, as shown in fig. 2b and fig. 2c (a partial top view of the structure corresponding to fig. 2 a). In some embodiments, the first through hole 11 is square, and the side length of the square is 4-5 um. Of course, those skilled in the art may make other arrangements to the shape and size of the first through hole 11 as required.
Further, the contact layer 220 is etched through the first via hole 11 to form a contact hole 211, as shown in fig. 3.
In this step, a portion of the contact layer 220 is removed, for example, by a dry etching process, and by controlling the time such that the etching is stopped inside the contact layer 220, the shape of the first via hole 11 will be transferred into the contact hole 211.
In the present embodiment, the depth of the contact hole 211 is 2-3 um. Of course, other settings for the depth of the contact holes 211 may be made by those skilled in the art as desired.
Further, the first mask is removed and a second mask 20 is formed on the contact layer 220, as shown in fig. 4.
In this step, for example, the first mask is removed by ashing, and then the second mask 20 is formed on the contact layer 220 by photolithography or the like, wherein the second mask 20 has a second through hole 21, the position of the second through hole 21 corresponds to the position of the first through hole 11 or the contact hole 221, and the aperture d2 of the second through hole 21 is larger than the aperture d1 of the first through hole 11. In the present embodiment, the aperture d2 is 2-3 um larger than the aperture d 1. Of course, those skilled in the art may make other settings for the difference between the hole diameters of the first through hole 11 and the second through hole 21 as needed.
Further, a conductive material is filled in the contact hole 221 and the second via hole 21 to form an ohmic contact structure 230, as shown in fig. 5.
In this step, a conductive material is filled in the contact hole 221 and the second via hole 21, for example, using an evaporation process.
In this embodiment, the conductive material is, for example, gold or gold-zinc alloy. The conductive material filled in the second via hole 21 is located on the contact layer 220 and serves as a first portion 231 of the ohmic contact structure 230, the conductive material filled in the contact hole 221 is located in the contact layer 220 and serves as a second portion 232 of the ohmic contact structure 230, and for each ohmic contact structure 230, the first portion 231 covers over a contact surface of the second portion 232 and the contact layer 220. Of course, the conductive material may also be gold beryllium alloy, ITO, IZO or other conductive materials commonly used in the art.
In the present embodiment, the cross-sectional area of the first portion 230 occupies 3% to 9% of the area of the light exiting region of the entire contact layer 220 in a direction parallel to the surface of the contact layer 220. Of course, other relative area ratios of the contact holes 211 and the contact layer 220 may be provided as desired by those skilled in the art.
Further, the second mask is removed, and then the contact layer 220 and the ohmic contact structure 230 are annealed to form the ohmic contact structure of the light emitting diode shown in fig. 6.
In this step, the ohmic contact structure 230 and the contact layer 220 form a good ohmic contact through an annealing step, wherein the annealing temperature is 460 to 480 ℃, and the annealing time is 15 to 20 min. Of course, other settings of the annealing time and annealing temperature may be made by one skilled in the art as desired.
As shown in fig. 2a to 6, the ohmic contact structure of the light emitting diode according to the first embodiment of the present invention includes: a substrate 201, an epitaxial layer 210, a contact layer 220, and a plurality of ohmic contact structures 230.
An epitaxial layer 210 is located on the substrate 201 and a contact layer 220 is located on the epitaxial layer 210. A plurality of ohmic contact structures 230 cover a portion of the surface of the contact layer 220, each ohmic contact structure 230 extends into the contact layer 220 through the surface of the contact layer 220, and each ohmic contact structure 230 forms an ohmic contact with the contact layer 220.
In the present embodiment, the ohmic contact structures 230 are separated from each other and arranged according to a predetermined rule, for example, the ohmic contact structures are arranged at equal intervals. Of course, the arrangement of the spacing can be modified as desired by those skilled in the art.
Each ohmic contact structure 230 comprises a first part 231 on the contact layer 220 and a second part 232 in the contact layer 220, and for each ohmic contact structure 230, the first part 231 covers the ohmic contact surface of the second part 232 and the contact layer 220, so that the ohmic contact surface is shielded by the first part 231, and in the subsequent process, other substances cannot be filled in the ohmic contact surface, and the ohmic contact performance is ensured.
In the present embodiment, the cross-sectional shape of the ohmic contact structure 230 is at least one of circular, elliptical, and polygonal in a direction parallel to the surface of the contact layer 220.
In the present embodiment, the cross-sectional shape of the second portion 232 of each ohmic contact structure 230 is a shape that is wide at the top and narrow at the bottom in the thickness direction of the contact layer 220.
In the second embodiment of the present invention, the cross-sectional shape of the second portion 232 of each ohmic contact structure 230 is the same width up and down along the thickness direction of the contact layer 220, as shown in fig. 7.
In the second embodiment, the cross-sectional shape of the second portion 232 of the ohmic contact structures 230 in the direction parallel to the surface of the contact layer 220 is a square with a side length of 4 μm, and the depth of the second portion 232 in the thickness direction of the contact layer 220 is 3 μm, assuming that the cross-sectional shape of the second portion 231 of each ohmic contact structure 230 in the thickness direction of the contact layer 220 is the same width up and down. Compared with the related art shown in fig. 1, the ohmic contact area of the embodiment of the invention can be increased by the sum of the surface areas of the inner side walls of the contact holes. Under the ideal conditions that the side length is 4 micrometers and the depth is 3 micrometers (the area of the designed graph is consistent with the surface area of the bottom of an etching contact hole, the bottom is a flat plane, and the side wall is vertical to the side wall of the bottom surface), the increased surface area of the ohmic contact structure with the square graph on the surface is 48 square micrometers, and the equivalent ratio is increased by 300 percent. If the second portion 232 of the ohmic contact structure 230 has a circular cross-sectional shape along a direction parallel to the surface of the contact layer 220, the area of the second portion is the same as that of the square (e.g., 16 μm) 2 ) The second portion 232 is also 3 μm deep, increasing the ohmic contact area by 42.5 square microns by 266%.
Of course, the sectional shape, the sectional size, the depth, etc. of the ohmic contact structure 230 may be designed according to different design requirements, wherein in the case that the sectional area of the second portion 232 is equal, a figure with the longest sectional perimeter is preferred.
Fig. 8 is a schematic view showing an ohmic contact structure of a light emitting diode according to a third embodiment of the present invention.
Each of the ohmic contact structures 230 of the third embodiment is smaller in size than that of the first embodiment, and in one case, each of the ohmic contact structures 230 of the first embodiment is divided into two, and the light emitting area occupied by each of the ohmic contact structures 230 of the two embodiments is the same, but the cross-sectional perimeter of each of the ohmic contact structures 230 of the third embodiment is longer, and thus the ohmic contact area is larger.
According to the ohmic contact structure of the light emitting diode and the manufacturing method thereof provided by the embodiment of the invention, the ohmic contact surface of the ohmic contact structure and the ohmic contact layer longitudinally extends to the inside of the contact layer, so that the area of the ohmic contact surface is increased, the on-resistance of the light emitting diode is reduced, and the purposes of reducing voltage and reducing energy consumption are further achieved.
Furthermore, each ohmic contact structure comprises a first part and a second part, the first part is located on the contact layer, the second part is located in the contact layer, and for each ohmic contact structure, the first part covers the contact surface of the second part and the contact layer, so that the ohmic contact surface is shielded by the first part, and in the subsequent process, other substances cannot be filled in the ohmic contact surface, and the ohmic contact performance is guaranteed.
In addition, the ohmic contact surface longitudinally extends into the contact layer, so that two-dimensional ohmic contact is converted into three-dimensional ohmic contact, the ohmic contact area is increased, the occupied light emitting area is not increased or even reduced, and the light intensity of the light emitting diode can be increased while the voltage is reduced.
The embodiments of the present invention have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. The scope of the invention is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the invention, and these alternatives and modifications are intended to fall within the scope of the invention.
Claims (25)
1. An ohmic contact structure for a light emitting diode, comprising:
a substrate;
an epitaxial layer on the substrate;
a contact layer on the epitaxial layer; and
and the ohmic contact structures cover part of the surface of the contact layer, each ohmic contact structure extends into the contact layer through the surface of the contact layer and does not penetrate through the contact layer, and each ohmic contact structure and the contact layer form ohmic contact.
2. The ohmic contact structure of claim 1, wherein the plurality of ohmic contact structures are arranged according to a predetermined rule.
3. The ohmic contact structure of claim 2, wherein the predetermined regular arrangement comprises an equidistant arrangement.
4. The ohmic contact structure of claim 1, wherein each of the ohmic contact structures comprises a first portion on the contact layer and a second portion in the contact layer,
for each ohmic contact structure, the first portion overlies a contact surface of the second portion with the contact layer.
5. The ohmic contact structure according to claim 4, wherein a cross-sectional shape of the second portion of each of the ohmic contact structures is a shape which is wide at the top and narrow at the bottom in a thickness direction of the contact layer.
6. The ohmic contact structure according to claim 4, wherein a cross-sectional shape of the second portion of each of the ohmic contact structures is a shape having the same width in an upper and lower direction along a thickness direction of the contact layer.
7. The ohmic contact structure of claim 4, wherein the second portion of the ohmic contact structure is 2-3 um deep.
8. The ohmic contact structure of any one of claims 1-7, wherein a cross-sectional shape of the ohmic contact structure in a direction parallel to a surface of the contact layer is at least one of circular, elliptical, and polygonal.
9. The ohmic contact structure of any one of claims 1 to 7, wherein a cross-sectional shape of the ohmic contact structure in a direction parallel to a surface of the contact layer is a square having a side length of 4 to 5 um.
10. The ohmic contact structure of claim 4, wherein a cross-sectional area of the first portion of the ohmic contact structure in a direction parallel to a surface of the contact layer accounts for 3% to 9% of an area of a light exit region of the light emitting diode.
11. The ohmic contact structure of any one of claims 1-7, wherein the material of the contact layer comprises at least one of GaP, AlGaAs, AlGaInP, and the doping impurity of the contact layer is a P-type impurity.
12. A method for manufacturing an ohmic contact structure of a light emitting diode includes:
forming an epitaxial layer on a substrate;
forming a contact layer on the epitaxial layer; and
forming a plurality of ohmic contact structures, covering part of the surface of the contact layer, wherein each ohmic contact structure extends into the contact layer through the surface of the contact layer and does not penetrate through the contact layer, and each ohmic contact structure and the contact layer form ohmic contact.
13. The method of manufacturing according to claim 12, wherein the plurality of ohmic contact structures are arranged in a predetermined pattern.
14. The manufacturing method according to claim 13, wherein the predetermined regular arrangement includes an arrangement at equal intervals.
15. The method of manufacturing of claim 12, wherein the step of forming a plurality of ohmic contact structures comprises:
forming a first mask on the contact layer, the first mask having a first via;
etching the contact layer through the first through hole to form a contact hole; and
and filling a conductive material in the contact hole to form the ohmic contact structure.
16. The method of manufacturing of claim 15, wherein prior to filling the conductive material, the step of forming a plurality of ohmic contact structures further comprises:
removing the first mask; and
forming a second mask on the contact layer, the second mask having a second through hole corresponding in position to the first through hole and having a larger aperture than the first through hole,
wherein the conductive material is further filled in the second via hole, the conductive material filled in the second via hole is located on the contact layer and serves as a first portion of the ohmic contact structure, the conductive material filled in the contact hole is located in the contact layer and serves as a second portion of the ohmic contact structure,
for each ohmic contact structure, the first portion overlies a contact surface of the second portion with the contact layer.
17. The manufacturing method according to claim 16, wherein a difference between the hole diameters of the second through hole and the first through hole is 2 to 3 um.
18. The method of manufacturing of claim 16, wherein after forming a plurality of ohmic contact structures, the method of manufacturing further comprises: and annealing the contact layer and the ohmic contact structure.
19. The manufacturing method according to claim 16, wherein a cross-sectional shape of the second portion of each of the ohmic contact structures in a thickness direction of the contact layer is a shape which is wide at the top and narrow at the bottom.
20. The manufacturing method according to claim 16, wherein a cross-sectional shape of the second portion of each of the ohmic contact structures in a thickness direction of the contact layer is a shape having the same width in the upper and lower directions.
21. The method of manufacturing according to claim 16, wherein the second portion of the ohmic contact structure has a depth of 2 to 3 um.
22. The manufacturing method according to any one of claims 12 to 21, wherein a sectional shape of the ohmic contact structure in a direction parallel to the surface of the contact layer is at least one of a circle, an ellipse, and a polygon.
23. The manufacturing method according to any one of claims 12 to 21, wherein a cross-sectional shape of the ohmic contact structure in a direction parallel to the surface of the contact layer is a square having a side length of 4 to 5 um.
24. The manufacturing method according to claim 16, wherein a cross-sectional area of the first portion of the ohmic contact structure in a direction parallel to a surface of the contact layer accounts for 3% to 9% of an area of a light exiting region of the light emitting diode.
25. The manufacturing method according to any one of claims 12 to 21, wherein the material of the contact layer includes at least one of GaP, AlGaAs, and AlGaInP, and the doping impurity of the contact layer is a P-type impurity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110351781.9A CN113206178B (en) | 2021-03-31 | 2021-03-31 | Ohmic contact structure of light emitting diode and manufacturing method thereof |
Applications Claiming Priority (1)
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| CN105355742A (en) * | 2015-12-04 | 2016-02-24 | 天津三安光电有限公司 | Light emitting diode chip and manufacturing method thereof |
| CN105609609A (en) * | 2016-01-22 | 2016-05-25 | 华灿光电(苏州）有限公司 | Light emitting diode chip with inverted structure and fabrication method of light emitting diode chip |
| CN107808913A (en) * | 2017-10-27 | 2018-03-16 | 江西乾照光电有限公司 | A kind of light emitting diode and preparation method |
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| CN105355742A (en) * | 2015-12-04 | 2016-02-24 | 天津三安光电有限公司 | Light emitting diode chip and manufacturing method thereof |
| CN105609609A (en) * | 2016-01-22 | 2016-05-25 | 华灿光电(苏州）有限公司 | Light emitting diode chip with inverted structure and fabrication method of light emitting diode chip |
| CN107808913A (en) * | 2017-10-27 | 2018-03-16 | 江西乾照光电有限公司 | A kind of light emitting diode and preparation method |
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