CN113206110B - 影像感测器结构 - Google Patents
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Abstract
本发明提供一种影像感测器结构,其具有相邻的可见光感测区及红外光感测区,且其包含半导体基板、多个光感测元件、红外光吸收增强件、彩色滤光器和红外光通过滤光器。半导体基板具有相对的前侧及背侧。此些光感测元件设置在半导体基板的前侧。红外光吸收增强件设置在该半导体基板的背侧且仅在红外光感测区中。彩色滤光器位于半导体基板的背侧上且在可见光感测区中。红外光通过滤光器位于红外光吸收增强件上。
Description
技术领域
本发明关于一种影像感测器,且特别是指一种具有红外光感测功能的影像感测器结构。
背景技术
影像感测器已广泛用于各种成像应用及产品上,例如智慧型手机、数位相机、扫描器等。进一步地,具有红外光感测功能的影像感测器可侦测红外光和可见光,以得到更多的资讯。具有红外光侦测功能的影像感测器可应用在例如虹膜辨识、物件侦测和类似的安全应用上。
发明内容
本发明的一方面是在于提供一种影像感测器结构,其具有相邻的可见光感测区及红外光感测区,且其包含半导体基板、多个光感测元件、红外光吸收增强件、彩色滤光器和红外光通过滤光器。半导体基板具有相对的前侧及背侧。此些光感测元件设置在半导体基板的前侧。红外光吸收增强件设置在该半导体基板的背侧且仅在红外光感测区中。彩色滤光器位于半导体基板的背侧上且在可见光感测区中。红外光通过滤光器位于红外光吸收增强件上。
依据本发明的一些实施例,上述影像感测器结构更包含红外光陷波滤光器,其位于上述半导体基板的背侧上且在上述可见光感测区中。
依据本发明的一些实施例,上述红外光陷波滤光器设于上述半导体基板与上述彩色滤光器之间。
依据本发明的一些实施例,上述影像感测器结构更包含多个微透镜,其分别位于上述彩色滤光器和上述红外光通过滤光器上。
依据本发明的一些实施例,上述红外光通过滤光器具有700纳米至1100纳米的光通过波段。
依据本发明的一些实施例,上述红外光通过滤光器的光通过波段的中心波长约为850纳米。
依据本发明的一些实施例,上述红外光通过滤光器的光通过波段的中心波长约为940纳米。
依据本发明的一些实施例,上述影像感测器结构更包位于上述半导体基板的前侧上的元件层和位于元件层上的承载基板。
依据本发明的一些实施例,上述红外光吸收增强件包含二氧化硅。
附图说明
为了更完整了解实施例及其优点,现参照结合附图所做的下列描述,其中:
图1为依据本发明一些实施例的影像感测器结构的剖视图;
图2A至图2G为绘示依据本发明一些实施例的形成图1的影像感测器结构的方法的各中间阶段的剖面示意图;
图3示出在不具有滤光器下,本发明的影像感测器结构与传统在半导体基板的光接收侧不具红外光吸收增强件的影像感测器结构在红外光感测区中入射光波长与量子效率的对应关系;
图4A示出具有中心截止波长为850纳米的红外光陷波滤光器但不具有红外光吸收增强件的影像感测器结构在红色像素、绿色像素、蓝色像素和红外光像素中入射光波长与量子效率的对应关系;
图4B示出具有中心截止波长为850纳米的红外光陷波滤光器及红外光吸收增强件的影像感测器结构在红色像素、绿色像素、蓝色像素和红外光像素中入射光波长与量子效率的对应关系;
图5A示出不具有中心截止波长为850纳米的红外光陷波滤光器及红外光吸收增强件的影像感测器结构在红色像素、绿色像素、蓝色像素和红外光像素中入射光波长与量子效率的对应关系;以及
图5B示出不具有中心截止波长为850纳米的红外光陷波滤光器但具有红外光吸收增强件的影像感测器结构在红色像素、绿色像素、蓝色像素和红外光像素中入射光波长与量子效率的对应关系。
附图标记列表
100:影像感测器结构
100B:蓝光感测区
100C:可见光感测区
100G:绿光感测区
100IR:红外光感测区
100R:红光感测区
102:半导体基板
102A:前侧
102B:背侧
104A-104D:光感测元件
106:元件层
106A:电晶体
106B:导线
106C:介层窗
108:承载基板
110:红外光吸收增强件
112:红外光陷波滤光器
114:彩色滤光器
114B:蓝光滤光部
114G:绿光滤光部
114R:红光滤光部
116:红外光通过滤光器
118:微透镜
310,320:曲线。
具体实施方式
以下仔细讨论本发明的实施例。然而,可以理解的是,实施例提供许多可应用的概念,其可实施于各式各样的特定内容中。所讨论、公开的实施例仅供说明,并非用以限定本发明的范围。
在本文中所使用的用语仅是为了描述特定实施例,非用以限制申请专利范围。除非另有限制,否则单数形式的「一」或「该」用语也可用来表示复数形式。此外,空间相对性用语的使用是为了说明元件在使用或操作时的不同方位,而不只限于附图所绘示的方向。元件也可以其他方式定向(旋转90度或在其他方向),而在此使用的空间相对性描述也可以相同方式解读。
为了简化和明确说明,本文可能会在各种实施例中重复使用元件符号和/或字母,但这并不表示所讨论的各种实施例及/或配置之间有因果关系。
请参照图1,图1为依据本发明一些实施例的影像感测器结构100的剖视图。影像感测器结构100可应用至例如背照式(back-side illuminated;BSI)互补金属氧化物半导体(complementary metal oxide semiconductor;CMOS)影像感测器、电荷耦合元件(chargecoupled device;CCD)影像感测器、或其他合适的影像感测器。影像感测器结构100包含多个排列为矩阵的感测像素。每一感测像素具有用以感测可见光的可见光感测区100C和用以感测红外光的红外光感测区100IR。可见光感测区100C包含用以感测位于红光波段的入射光的红光感测区100R、用以感测位于绿光波段的入射光的绿光感测区100G和用以感测位于蓝光波段的入射光的蓝光感测区100B。应注意的是,为便利说明,图1仅绘示单一感测像素,而本领域技术人员可直接得知,其他感测像素的剖视图可实质相同或相似于图1所示的内容。此外,红光感测区100R、绿光感测区100G、蓝光感测区100B和红外光感测区100IR在俯视上可以条状形式排列,但本发明不限于此。
影像感测器结构100包含半导体基板102、光感测元件104A-104D、元件层106、承载基板108、红外光吸收增强件110、红外光陷波滤光器112、彩色滤光器114、红外光通过滤光器116和微透镜118。如图1所示,光感测元件104A-104D设置于半导体基板102的前侧102A,其用以将穿透半导体基板102的背侧102B的入射光转换为电子。光感测元件104A-104C分别配置在红光感测区100R、绿光感测区100G和蓝光感测区100B中,以分别感测红光、绿光和蓝光,而光感测元件104D配置在红外光感测区100IR中,以感测红外光。光感测元件104A-104D可以是例如光二极管、钉扎光二极管(pinned photodiode)、光闸(photogate)、光电晶体(photo transistor)和/或相似者。
元件层106设置在半导体基板102的前侧102A上。元件层106可包含介电层和用以耦合电子构件的导电层,例如电晶体106A、导线106B、介层窗106C和/或相似者。电晶体106A可配置为收集由光感测元件104A-104D产生的电子,且将收集的电子转换为电压讯号,且导线106B和介层窗106C可配置为传输电子至例如影像处理晶片。应注意的是,电晶体106A、导线106B和介层窗106C的配置仅为示例。元件层106中电子构件的实际设置和配置可依据设计需求决定,其不以图1绘示的内容为限。
承载基板108接合至元件层106。在一些实施例中,承载基板108可借由例如直接接合制程、光学融熔接合(fusion bonding)制程或其他合适的接合制程接合至元件层106。
红外光吸收增强件110设置在半导体基板102的背侧102B且位于红外光感测区100IR中,以增强入射至半导体基板102且被光感测元件104D吸收的红外光的量。红外光吸收增强件110可以是凸形阵列结构、梯形阵列结构、角锥阵列结构、倒角锥阵列结构、脊形结构或任何其他可增强入射至半导体基板102的红外光的量的结构。在另一些实施例中,多个红外光吸收增强件110设置在半导体基板102的背侧102B且位于红外光感测区100IR中。
红外光陷波滤光器112设置在半导体基板102的背侧102B上且位于可见光感测区100C中。在一些实施例中,红外光陷波滤光器112为近红外光截止滤光器,其可阻隔波长约为700纳米至1100纳米的入射光。
彩色滤光器114设置在红外光陷波滤光器112上且位于可见光感测区100C中。彩色滤光器114具有红光滤光部114R、绿光滤光部114G和蓝光滤光部114B,其分别用以使红光、绿光和蓝光通过。
红外光通过滤光器116设置在红外光吸收增强件110和半导体基板102的背侧102B上且在红外光感测区100IR中,以使红外光通过。在一些实施例中,红外光通过滤光器116具有约为700纳米至1100纳米的光通过波段,以使近红外光通过。在若干实施例中,依据不同的设计需求,红外光通过滤光器116的光通过波段的中心波长约为850纳米或940纳米。
微透镜118设置在彩色滤光器114和红外光通过滤光器116上,且分别位于红光感测区100R、绿光感测区100G、蓝光感测区100B和红外光感测区100IR中。如图1所示,每一微透镜118在其光接收侧具有用以聚焦入射光的凸形。在一些实施例中,在彩色滤光器114、红外光通过滤光器116与微透镜118之间可另设置间隔层(图未绘示),以将微透镜118与彩色滤光器114和红外光通过滤光器116相隔开。
请参照图2A-2G,其绘示依据本发明一些实施例的形成影像感测器结构100的方法的各中间阶段的剖面示意图。在图2A中,提供半导体基板102。提供的半导体基板102可包含例如硅和/或锗的半导体材料。其他适于形成影像感测器结构100的材料可包含在半导体基板102中。
在图2B中,光感测元件104A-104D形成在半导体基板102的前侧102A,元件层106形成在光感测元件104A-104D的上方且在半导体基板102的前侧102A,而接着承载基板108接合至元件层106。
具体而言,半导体基板102具有分别对应影像感测器结构100的红光感测区100R、绿光感测区100G、蓝光感测区100B和红外光感测区100IR的部分,且光感测元件104A-104D分别设置在红光感测区100R、绿光感测区100G、蓝光感测区100B和红外光感测区100IR中。红光感测区100R、绿光感测区100G和蓝光感测区100B的组合又称为可见光感测区100C。光感测元件104A-104D可借由在半导体基板102上进行蚀刻程序且接着进行扩散或布植制程而形成,但本发明不限于此。形成光感测元件104A-104D的制程可依据设计需求而决定,例如光感测元件104A-104D的种类。
形成的元件层106可包含分别耦接光感测元件104A-104D的电晶体106A,以收集由光感测元件104A-104D产生的电子,且将收集的电子转换为电压讯号。形成的元件层106也可包含用以传输电子至例如影像处理晶片的导线106B和介层窗106C。承载基板108可借由例如直接接合制程、光学融熔接合制程或其他合适的接合制程接合至元件层106。
在图2C中,薄化半导体基板102。在一些实施例中,在承载基板108接合至元件层106后,上下翻转图2C所示的结构,且接着在原半导体基板102的背侧(相对于前侧102A)进行合适的蚀刻制程,以薄化半导体基板102。
在图2D中,红外光吸收增强件110在半导体基板102的背侧102B上且在红外光感测区100IR中形成,以增强入射至半导体基板102且被光感测元件104D吸收的红外光的量。在一些实施例中,可在半导体基板102的背侧102B上和红外光感测区100IR中进行图案化制程以形成一或多个凹槽,且接着可进行沉积制程,将材料填入至凹槽,以形成红外光吸收增强件110。形成红外光吸收增强件110的材料可包含例如二氧化硅、氧化铪、硅锗、上述组合或相似者。
在图2E中,在半导体基板102的背侧102B上且在可见光感测区100C中形成用于阻隔特定红外光波带的光的红外光陷波滤光器112。红外光陷波滤光器112可以是近红外光截止滤光器,其借由涂布制程或其他合适制程形成,且包含可蚀刻材料。
在图2F中,彩色滤光器114在红外光陷波滤光器112上且在可见光感测区100C中形成,且红外光通过滤光器116在红外光吸收增强件110上且红外光感测区100IR中形成。
形成的彩色滤光器114和红外光陷波滤光器112用以使波长在可见光波段的光通过,且阻隔波长在可见光波段以外的光。彩色滤光器114的可见光波段可包含红光波段、绿光波段和蓝光波段。彩色滤光器114具有红光滤光部114R、绿光滤光部114G和蓝光滤光部114B,其分别使红光、绿光和蓝光通过。形成的彩色滤光器114可由例如颜料基底聚合物、染料基底聚合物、树脂和/或其他合适材料,且可借由例如涂布制程或其他合适制程而形成。
形成的红外光通过滤光器116用以使波长在近红外光波段的光通过,且阻隔波长在近红外光波段以外的光。红外光通过滤光器116可包含使红外光通过且阻隔可见光的聚合物,且可借由利用微影图案化制程或其他合适制程而形成。在一些实施例中,彩色滤光器114和红外光通过滤光器116的顶部平面可共面。
在图2G中,微透镜118在彩色滤光器114和红外光通过滤光器116上形成,且分别位于红光感测区100R、绿光感测区100G、蓝光感测区100B和红外光感测区100IR中。形成的微透镜118可在其光接收侧具有用以提升光吸收效率的凸形。微透镜118可由玻璃、丙烯酸聚合物或其他具有高穿透率的合适材料,且可借由旋涂制程、沉积制程和/或其他合适制程而形成。
图3示出在不具有滤光器下,图1的影像感测器结构100在红外光感测区100IR中入射光波长与量子效率的对应关系(曲线310)与传统在半导体基板的光接收侧不具红外光吸收增强件的影像感测器结构在红外光感测区中入射光波长与量子效率的对应关系(曲线320)。如图3所示,相较于传统影像感测器结构,本发明的影像感测器结构100在波带约为700-1100纳米的近红外光波带的量子效率显著提升。特别地,影像感测器结构100在波长为850纳米或940纳米的量子效率提升大约2-3倍。
图4A示出具有中心截止波长为850纳米的红外光陷波滤光器112但不具有红外光吸收增强件110的影像感测器结构100在红色像素(即红光感测区100R)、绿色像素(即绿光感测区100G)、蓝色像素(即蓝光感测区100B)和红外光像素(即红外光感测区100IR)中入射光波长与量子效率的对应关系,而图4B示出具有中心截止波长为850纳米的红外光陷波滤光器112及红外光吸收增强件110的影像感测器结构100在红色像素、绿色像素、蓝色像素和红外光像素中入射光波长与量子效率的对应关系。借由比较图4A和图4B所示的图表可知,具有的红外光吸收增强件110的影像感测器结构100,在红外光像素中对应800-900纳米的波带的量子效率显著提升,且在红色像素、绿色像素和蓝色像素中对应可见光波带(即400-700纳米)的量子效率大致维持不变。虽然红外光对红色、绿色和蓝色像素的串音(crosstalk)亦增强,但此串音可借由影像处理而消除。
此外,图5A示出不具有中心截止波长为850纳米的红外光陷波滤光器112及红外光吸收增强件110的影像感测器结构100在红色像素、绿色像素、蓝色像素和红外光像素中入射光波长与量子效率的对应关系,而图5B示出不具有中心截止波长为850纳米的红外光陷波滤光器112但具有红外光吸收增强件110的影像感测器结构100在红色像素、绿色像素、蓝色像素和红外光像素中入射光波长与量子效率的对应关系。相似于具有红外光陷波滤光器112的影像感测器结构100,借由比较图5A和图5B的graphs可知,具有红外光吸收增强件110的影像感测器结构100,在红外光感测区100IR中对应800-900纳米的波带的量子效率显著提升,且在红光感测区100R、绿光感测区100G和蓝光感测区100B中对应可见光波带(即400-700纳米)的量子效率大致维持不变。此外,在具有红外光吸收增强件110下,近红外光在红外光像素中的量子效率与其对红色、绿色和蓝色像素的串音的比值亦提升,而可见光在红色、绿色和蓝色像素中的量子效率与其对红外光像素的串音的比值大致维持相同。
虽然本发明已以实施例公开如上,然而其并非用以限定本发明,任何本领域技术人员,在不脱离本发明的精神和范围内,可作些许的更动与润饰,故本发明的保护范围当以所附的权利要求书所界定的为准。
Claims (9)
1.一种影像感测器结构,其特征在于,其具有相邻的一可见光感测区及一红外光感测区,所述影像感测器结构包含:
一半导体基板,其具有相对的一前侧及一背侧;
多个光感测元件,设置在所述半导体基板的前侧;
至少一红外光吸收增强件,设置在所述半导体基板的背侧,且仅在所述红外光感测区中,所述多个光感测元件与所述至少一红外光吸收增强件均设置于所述半导体基板内,并且所述多个光感测元件与所述至少一红外光吸收增强件彼此间隔开;
一彩色滤光器,位于所述半导体基板的背侧上且在所述可见光感测区中;以及
一红外光通过滤光器,位于所述至少一红外光吸收增强件上。
2.根据权利要求1所述的影像感测器结构,其特征在于,还包含:
一红外光陷波滤光器,位于所述半导体基板的背侧上且在所述可见光感测区中。
3.根据权利要求2所述的影像感测器结构,其特征在于,所述红外光陷波滤光器设于所述半导体基板与所述彩色滤光器之间。
4.根据权利要求1所述的影像感测器结构,其特征在于,还包含:
多个微透镜,分别位于所述彩色滤光器和所述红外光通过滤光器上。
5.根据权利要求1所述的影像感测器结构,其特征在于,所述红外光通过滤光器具有700纳米至1100纳米的光通过波段。
6.根据权利要求5所述的影像感测器结构,其特征在于,所述红外光通过滤光器的光通过波段的中心波长约为850纳米。
7.根据权利要求5所述的影像感测器结构,其特征在于,所述红外光通过滤光器的光通过波段的中心波长约为940纳米。
8.根据权利要求1所述的影像感测器结构,其特征在于,还包含:
一元件层,位于所述半导体基板的前侧上;以及
一承载基板,位于所述元件层上。
9.根据权利要求1所述的影像感测器结构,其特征在于,所述至少一红外光吸收增强件包含二氧化硅。
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