CN113206020B

CN113206020B - Evaporation offset measurement method and system of evaporation table

Info

Publication number: CN113206020B
Application number: CN202110380186.8A
Authority: CN
Inventors: 杨天应
Original assignee: Shenzhen Times Suxin Technology Co Ltd
Current assignee: Shenzhen Times Suxin Technology Co Ltd
Priority date: 2021-04-08
Filing date: 2021-04-08
Publication date: 2023-02-14
Anticipated expiration: 2041-04-08
Also published as: CN113206020A

Abstract

The invention discloses a method and a system for measuring evaporation offset of an evaporation table, which are characterized in that a Si wafer is subjected to deposition and photoetching treatment, and a deposition layer on the Si wafer is subjected to plasma etching to form a first alignment mark corresponding to an alignment photoetching pattern; carrying out photoetching treatment on the Si sheet to form a metal evaporation mark photoetching pattern; the alignment error between the metal evaporation mark photoetching pattern and the first alignment mark is recorded as a first alignment error; evaporating metal to form a metal evaporation mark; the alignment error between the metal evaporation mark and the first alignment mark is marked as a second alignment error; and calculating the evaporation offset of the evaporation table according to the first alignment error and the second alignment error. The evaporation offset measuring method and system for the evaporation table can accurately measure the evaporation offset of the evaporation table and provide data support for correcting and adjusting equipment and correcting layout design.

Description

Evaporation offset measuring method and system for evaporation table

Technical Field

The invention relates to the technical field of evaporation table equipment, in particular to an evaporation offset measurement method and system of an evaporation table.

Background

An electron beam evaporation stage system is an important process technology in the manufacture of compound semiconductor devices, and is characterized in that metal in a crucible is heated by electron beams in a high vacuum state, is melted and is evaporated onto a required substrate to form a metal film. However, due to the fact that the evaporation table has certain defects in the structure, an inclination angle exists when metal is deposited on a substrate in the evaporation process, the evaporated metal has certain offset relative to the photoetching opening pattern, the actual evaporation pattern is different from a preset design layout, and certain influence is caused on the manufacturing of a compound semiconductor device.

Disclosure of Invention

The technical problem to be solved by the invention is as follows: the evaporation offset measuring method and system for the evaporation table can accurately measure the evaporation offset of the evaporation table and provide data support for correcting and adjusting equipment and correcting layout design.

In order to solve the technical problem, the invention provides an evaporation offset measurement method and system for an evaporation table, comprising the following steps:

carrying out deposition and photoetching treatment on a Si sheet to enable a deposition layer with an alignment photoetching pattern to be deposited on the Si sheet;

carrying out plasma etching on the deposition layer to form a first alignment mark corresponding to the alignment photoetching pattern;

taking the first alignment mark as an alignment reference, and then carrying out photoetching treatment on the Si wafer to form a metal evaporation mark photoetching pattern;

presetting an alignment error of multiple points on the Si wafer by the metal evaporation mark photoetching pattern and the first alignment mark, and recording as a first alignment error;

evaporating metal to deposit the metal on the Si wafer to form a metal evaporation mark corresponding to the metal evaporation mark photoetching pattern;

presetting an alignment error of multiple points on the Si wafer by the metal evaporation mark and the first alignment mark, and recording as a second alignment error;

and calculating the evaporation offset of the evaporation table according to the first alignment error and the second alignment error.

Further, calculating the evaporation offset of the evaporation table according to the first alignment error and the second alignment error, specifically:

and taking the difference value of the first alignment error and the second alignment error as the evaporation offset.

Further, the depositing and the photolithography processing are performed on the Si wafer, so that a deposition layer with an alignment photolithography pattern is deposited on the Si wafer, specifically:

depositing a deposit with a first thickness on the Si wafer to form a deposition layer, and forming a para-position photoetching pattern on the Si wafer by a photoetching method, wherein the first thickness is 100 nanometers to 200 nanometers.

Further, an evaporation offset measurement method of an evaporation table is characterized by comprising the following steps:

carrying out deposition and photoetching treatment on a Si sheet to enable a deposition layer with a photoetching pattern in a preset shape to be deposited on the Si sheet;

carrying out plasma etching on the deposition layer to form a second alignment mark corresponding to the photoetching pattern with the preset shape;

evaporating metal to deposit the metal on the Si sheet, and intercepting the section of the Si sheet with the metal deposition layer;

and measuring the surface of the intercepted Si fragment through SEM, and measuring the offset between the metal on the section of the obtained Si fragment and the second alignment mark, wherein the offset is the evaporation offset of the evaporation table.

Further, the photoetching pattern with the preset shape is a photoetching pattern formed by arranging a plurality of strip-shaped patterns according to a preset sequence; each bar graph's length is 1mm, and the width is 0.6um.

Further, an evaporation offset measurement system of evaporation platform, its characterized in that includes: the device comprises a first alignment marking module, a first error module, a second error module and a calculation module;

the first alignment marking module is used for carrying out deposition and photoetching treatment on a Si wafer so as to enable a deposition layer with an alignment photoetching pattern to be deposited on the Si wafer; the first alignment mark is used for carrying out plasma etching on the deposition layer to form a first alignment mark corresponding to the alignment photoetching pattern;

the first error module is used for carrying out photoetching treatment on the Si wafer by taking the first alignment mark as an alignment reference to form a metal evaporation mark photoetching pattern;

presetting an alignment error of multiple points on the Si wafer by the metal evaporation mark photoetching pattern and the first alignment mark, and recording the alignment error as a first alignment error;

the second error module is used for evaporating metal to enable the metal to be deposited on the Si sheet and form a metal evaporation mark corresponding to the metal evaporation mark photoetching pattern;

presetting an alignment error of multiple points on the Si sheet by the metal evaporation mark and the first alignment mark, and recording as a second alignment error;

and the calculation module is used for calculating the evaporation offset of the evaporation table according to the first alignment error and the second alignment error.

Further, the calculation module is configured to calculate an evaporation offset of the evaporation stage according to the first alignment error and the second alignment error, and specifically includes:

Further, an evaporation offset measurement system of evaporation platform, its characterized in that includes: the second alignment mark module, the interception module and the measurement module;

wherein the second alignment marking module is configured to: carrying out deposition and photoetching treatment on a Si sheet to enable a deposition layer with a photoetching pattern in a preset shape to be deposited on the Si sheet; the second alignment mark is used for carrying out plasma etching on the deposition layer to form a second alignment mark corresponding to the photoetching pattern with the preset shape;

the intercepting module is used for evaporating metal, depositing the metal on the Si sheet and intercepting the section of the Si sheet with the metal deposition layer;

and the measuring module is used for measuring the intercepted Si fragment surface through SEM, and measuring the offset of the metal on the section of the obtained Si sheet and the second alignment mark, namely the evaporation offset of the evaporation table.

Further, the lithography pattern of the preset shape in the second alignment marking module is a lithography pattern formed by arranging a plurality of bar-shaped patterns according to a preset sequence; each bar graph's length is 1mm, and the width is 0.6um.

Compared with the prior art, the method and the system for measuring the evaporation offset of the evaporation table have the following beneficial effects that:

according to the method and the system for measuring the evaporation offset of the evaporation table, a Si sheet is subjected to deposition and photoetching treatment, and a deposition layer on the Si sheet is subjected to plasma etching to form a first alignment mark corresponding to the alignment photoetching pattern; carrying out photoetching treatment on the Si sheet to form a metal evaporation mark photoetching pattern; the alignment error between the metal evaporation mark photoetching pattern and the first alignment mark is recorded as a first alignment error; evaporating metal to form a metal evaporation mark; the alignment error between the metal evaporation mark and the first alignment mark is recorded as a second alignment error; and calculating the evaporation offset of the evaporation table according to the first alignment error and the second alignment error. Compared with the prior art that metal is evaporated on an evaporation table, due to the defects of the structure of the evaporation table, an inclination angle exists when the metal is deposited on a substrate in the evaporation process, so that the evaporated metal has a certain offset relative to a photoetching opening pattern, the actual evaporated pattern has a difference relative to a preset design layout, and a certain influence is caused on the manufacture of a compound semiconductor device. The evaporation offset measuring method and system for the evaporation table can accurately measure the evaporation offset of the evaporation table, provide data support for correcting and adjusting equipment and correcting layout design, and greatly improve the stability of the process.

Drawings

FIG. 1 is a schematic flow chart of an embodiment of an evaporation offset measurement method for an evaporation table according to the present invention;

FIG. 2 is a schematic block diagram of an evaporation offset measurement system of an evaporation station according to an embodiment of the present invention;

FIG. 3 is a schematic flow chart illustrating another embodiment of a method for measuring evaporation offset of an evaporation station according to the present invention;

fig. 4 is a schematic block diagram of an evaporation offset measurement system of an evaporation station according to another embodiment of the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.

Example 1

Referring to fig. 1, fig. 1 is a schematic flow chart of an embodiment of an evaporation offset measurement method of an evaporation station according to the present invention, as shown in fig. 1, the method includes steps 101-107, specifically as follows:

step 101: and carrying out deposition and photoetching treatment on the Si sheet so as to enable the Si sheet to be deposited with a deposition layer with an alignment photoetching pattern.

In this embodiment, siN is deposited on the Si wafer to form a deposition layer with a deposition thickness of 100 nm to 200 nm, and a first alignment mark lithography pattern is formed on the deposition layer of the Si wafer by a stepper.

In the present embodiment, the alignment lithography pattern is a lithography pattern formed by arranging a plurality of bar patterns in a predetermined order, and the alignment lithography pattern is common knowledge to those skilled in the art.

Step 102: and carrying out plasma etching on the deposition layer to form a first alignment mark corresponding to the alignment photoetching pattern.

In the embodiment, the F-based plasma is used for etching the alignment photoetching pattern in the deposition layer on the Si wafer, the etching depth is 100 nanometers to 200 nanometers, and then the organic solvent is used for removing the excessive photoresist after etching, so that the first alignment mark is formed.

As an example of this embodiment, in addition to selecting the F-based plasma, other plasmas may be selected for etching, the selection of the plasma used in etching is related to what substance is deposited on the Si wafer, and the selection of other deposition substances may select the corresponding plasma for etching.

Step 103: and photoetching the Si wafer by taking the first alignment mark as an alignment reference to form a metal evaporation mark photoetching pattern.

In this embodiment, the first alignment mark in step 102 is used as an overlay alignment standard, and a step lithography machine is used to perform a lithography process on the Si wafer to form a metal evaporation mark lithography pattern.

Step 104: and presetting an alignment error of multiple points on the Si sheet by the metal evaporation mark photoetching pattern and the first alignment mark, and recording as a first alignment error.

In this embodiment, five points are selected as the comparison points on the Si wafer, and it can be known that, in addition to the five points selected on the Si wafer, other points can be selected to achieve the same effect, the metal evaporation mark lithography pattern in step 104 is compared with the first alignment mark in step 102, and the overlay errors of the two at the five points on the Si wafer are recorded as the first overlay error.

Step 105: and evaporating metal to deposit the metal on the Si wafer to form a metal evaporation mark corresponding to the metal evaporation mark photoetching pattern.

In this embodiment, metal Al or Au is evaporated to deposit metal on the Si wafer to form a metal deposition layer with a deposition thickness of 100 nm to 200 nm, and a metal evaporation mark having a metal evaporation mark lithography pattern in step 103 is formed, where the evaporated metal may also be other active metal having an adhesion effect that can achieve the same function.

Step 106: and presetting multi-point alignment errors on the Si sheet by the metal evaporation marks and the first alignment marks, and recording as second alignment errors.

In this embodiment, the five points on the Si wafer selected in step 104 are used as comparison references, the metal evaporation mark obtained in step 105 is compared with the first alignment mark obtained in step 102, and the overlay error value of the two metal evaporation marks at the five points on the Si wafer is recorded as the second overlay error.

Step 107: and calculating the evaporation offset of the evaporation table according to the first alignment error and the second alignment error.

In this embodiment, the numerical values of the five points in the second overlay error obtained in step 106 are correspondingly subtracted from the numerical values of the five points in the first overlay error obtained in step 104, and the obtained difference is the evaporation offset of the evaporation table at the five points for evaporating the metal on the Si wafer.

Referring to fig. 2, fig. 2 is a block diagram of an embodiment of an evaporation offset measurement system of an evaporation station according to the present invention, and as shown in fig. 2, the evaporation offset measurement system of the evaporation station includes:

the first alignment mark module 201 is configured to deposit and perform photolithography processing on a Si wafer, so that a deposition layer with an alignment lithography pattern is deposited on the Si wafer, and perform plasma etching on the deposition layer to form a first alignment mark corresponding to the alignment lithography pattern, and specifically: the method comprises the steps of depositing SiN on a Si sheet to form a deposition layer with the deposition thickness of 100-200 nanometers, forming a first alignment mark photoetching graph on the deposition layer of the Si sheet through a stepping photoetching machine, etching the alignment photoetching graph in the deposition layer on the Si sheet by using F-based plasma with the etching depth of 100-200 nanometers, and removing excessive etching photoresist by using an organic solvent to form a first alignment mark, wherein selection of the plasma used in etching is related to what kind of substance deposited on the Si sheet, and other deposition substances can be selected to be etched by using corresponding plasmas.

A first error module 202, configured to perform lithography processing on the Si wafer to form a metal evaporation mark lithography pattern, where the metal evaporation mark lithography pattern and the first alignment mark preset multipoint overlay errors on the Si wafer and are recorded as first overlay errors, and the specific steps are as follows: the first alignment mark is used as an alignment standard, photoetching is carried out on a Si wafer through a stepping photoetching machine to form a metal evaporation mark photoetching pattern, five points are selected as comparison points on the Si wafer, the same effect can be realized by selecting other points besides the five points selected on the Si wafer, the metal evaporation mark photoetching pattern is compared with the first alignment mark, and the alignment errors of the metal evaporation mark photoetching pattern and the first alignment mark at the five points on the Si wafer are recorded and are recorded as first alignment errors.

The second error module 203: the method is used for evaporating metal, so that the metal is deposited on the Si wafer to form a metal evaporation mark corresponding to the metal evaporation mark photoetching pattern, and the alignment error of multiple points preset on the Si wafer by the metal evaporation mark and the first alignment mark is marked as a second alignment error, and specifically comprises the following steps: and evaporating metal Al or Au to enable the metal to be deposited on the Si sheet to form a metal deposition layer, wherein the deposition thickness is 100-200 nanometers, and a metal evaporation mark with a metal evaporation mark photoetching pattern is formed, wherein the evaporated metal can also be other active metals with the same function and an adhesion effect, five points on the Si sheet are taken as reference for comparison, the metal evaporation mark is compared with the first alignment mark, and the registration error values of the metal evaporation mark and the first alignment mark at the five points on the Si sheet are recorded and are taken as second registration error.

The calculation module 204: the method is used for calculating the evaporation offset of the evaporation table according to the first alignment error and the second alignment error, and specifically comprises the following steps: and correspondingly subtracting the numerical values of the five points in the first alignment error from the numerical values of the five points in the second alignment error to obtain a difference value, namely the evaporation offset of the five points of the evaporation table for evaporating metal on the Si wafer.

According to the embodiment, the Si wafer is subjected to deposition and photoetching treatment, the deposition layer is subjected to etching treatment to form a first alignment mark, a metal evaporation mark photoetching pattern and a metal evaporation mark, the alignment errors of the metal evaporation mark photoetching pattern and five points of the first alignment mark on the Si wafer are recorded as first errors, the alignment errors of the metal evaporation mark and five points of the first alignment mark on the Si wafer are recorded as second alignment errors, and the evaporation offset of the evaporation table is calculated according to the first alignment error and the second alignment error.

Example 2

Referring to fig. 3, fig. 3 is a schematic flow chart of another embodiment of the evaporation offset measurement method of an evaporation station according to the present invention, and as shown in the drawing, the method includes steps 301 to 304, which are as follows:

step 301: and carrying out deposition and photoetching treatment on the Si sheet so as to enable the Si sheet to be deposited with a deposition layer with a photoetching pattern in a preset shape.

In this embodiment, siN is deposited on the Si wafer to form a deposition layer with a deposition thickness of 100 nm to 200 nm, and a plurality of photolithography patterns formed by arranging a plurality of bar patterns in a preset order are formed on the deposition layer of the Si wafer by using a step photolithography machine, wherein the length of a single bar pattern is 1mm, and the width of the single bar pattern is 0.6um.

Step 302: and carrying out plasma etching on the deposition layer to form a second alignment mark corresponding to the photoetching pattern with the preset shape.

In the embodiment, the F-based plasma is used for etching the thin strip-shaped photoetching pattern in the deposition layer on the Si wafer, the etching depth is 100-200 nanometers, then the organic solvent is used for removing the excessive photoresist after etching, and a second alignment mark is formed, wherein the selection of the plasma used in etching is related to the substance deposited on the upper side of the Si, and the selection of other deposition substances can select corresponding plasmas for etching.

Step 303: evaporating metal to deposit the metal on the Si sheet, and cutting the section of the Si sheet with the metal deposition layer.

In this embodiment, metal Al or Au is evaporated to deposit metal on the Si wafer to form a metal deposition layer, where the deposition thickness is 100 nm to 200 nm, and the evaporated metal may also be other active metal having an adhesion effect and capable of achieving the same function, and the Si wafer having the metal deposition layer is subjected to cross-sectional treatment.

Step 304: and measuring the surface of the intercepted Si fragment through SEM, and measuring the offset between the metal on the section of the obtained Si fragment and the second alignment mark, wherein the offset is the evaporation offset of the evaporation table.

In this embodiment, the intercepted cross-sectional shape of the Si sheet is measured by SEM to form a cross-sectional shape image, and the offset between the metal on the Si sheet cross-section and the second alignment mark is measured as the evaporation offset of the evaporation table.

Referring to fig. 4, fig. 4 is a block diagram of another embodiment of an evaporation offset measurement system of an evaporation station according to the present invention, and as shown in fig. 4, the evaporation offset measurement system of the evaporation station includes:

the second alignment marking module 401: the system is used for depositing and photoetching the Si sheet to deposit a deposition layer with a photoetching pattern in a preset shape on the Si sheet, and is used for carrying out plasma etching on the deposition layer to form a second alignment mark corresponding to the photoetching pattern in the preset shape, and the method specifically comprises the following steps: siN is deposited on the Si sheet to form a deposition layer with the deposition thickness of 100-200 nanometers, and photoetching graphs formed by arranging a plurality of strip graphs in a preset sequence are formed on the deposition layer of the Si sheet through a stepping photoetching machine, wherein the length of each strip graph is 1mm, and the width of each strip graph is 0.6um. And etching the thin strip-shaped photoetching pattern in the deposition layer on the Si wafer by using F-based plasma, wherein the etching depth is 100-200 nm, and then removing the excessive photoresist by using an organic solvent to form a second alignment mark, wherein the selection of the plasma used in the etching is related to the substance deposited on the upper side of the Si, and the other deposition substances can be selected to be etched by using corresponding plasmas.

The intercept module 402: the method is used for evaporating metal, depositing the metal on a Si sheet, and cutting the section of the Si sheet with the metal deposition layer, and specifically comprises the following steps: and evaporating metal Al or Au to enable the metal to be deposited on the Si sheet to form a metal deposition layer, wherein the deposition thickness is 100-200 nanometers, the evaporated metal can be other active metals with the same function and the adhesion effect, and the section of the Si sheet with the metal deposition layer is processed.

The measurement module 403: the measuring device is used for measuring the intercepted Si fragment surface through SEM, and measuring the offset of metal on the section of the obtained Si sheet and the second alignment mark, which is the evaporation offset of the evaporation table, and specifically comprises the following steps: and measuring the section shape of the intercepted Si sheet through SEM to form a section shape image, and measuring the offset of the metal on the section of the obtained Si sheet and the second alignment mark, wherein the offset is the evaporation offset of the evaporation table.

In this embodiment, a cross section of the Si wafer having the metal deposition layer is intercepted, a cross section morphology pattern is obtained through SEM processing, and then an offset for comparison with the second alignment mark is obtained, where the obtained offset is an evaporation offset of the evaporation table. The method can also accurately measure the evaporation offset of the evaporation table, and provides data support for correcting and adjusting equipment and correcting layout design.

Compared with the embodiment 1, in the embodiment 1, the evaporation offset of the evaporation table can be calculated by measuring the overlay error of the metal evaporation mark photoetching pattern and the first alignment mark on the Si wafer and measuring the overlay error of the metal evaporation mark and the first alignment mark on the Si wafer; in this embodiment, the cross section of the Si wafer is cut, and a cross-sectional shape is obtained by SEM processing, which is compared with the second alignment mark to obtain the evaporation offset of the evaporation table. Although both embodiments can achieve the same effect and the accuracy of the measurement result is consistent, the equipment used in the embodiment is complex and takes a long time.

In summary, according to the evaporation offset measurement method and system of the evaporation table, the deposition layer on the Si wafer is subjected to plasma etching by depositing and photoetching treatment on the Si wafer, and a first alignment mark corresponding to the alignment photoetching pattern is formed; carrying out photoetching treatment on the Si sheet to form a metal evaporation mark photoetching pattern; the alignment error between the metal evaporation mark photoetching pattern and the first alignment mark is recorded as a first alignment error; evaporating metal to form a metal evaporation mark; the alignment error between the metal evaporation mark and the first alignment mark is recorded as a second alignment error; and calculating the evaporation offset of the evaporation table according to the first alignment error and the second alignment error. The evaporation offset measuring method and system for the evaporation table can accurately measure the evaporation offset of the evaporation table and provide data support for correcting and adjusting equipment and correcting layout design.

The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, many modifications and substitutions can be made without departing from the technical principle of the present invention, and these modifications and substitutions should also be regarded as the protection scope of the present invention.

Claims

1. An evaporation offset measurement method of an evaporation station, comprising:

carrying out deposition and photoetching treatment on a Si sheet so as to enable a deposition layer with an alignment photoetching pattern to be deposited on the Si sheet;

2. The method as claimed in claim 1, wherein the evaporation offset of the evaporation stage is calculated according to the first alignment error and the second alignment error, specifically:

3. The method for measuring evaporation offset of an evaporation table according to claim 1, wherein the deposition and lithography process is performed on the Si wafer so that the Si wafer has a deposition layer with an alignment lithography pattern deposited thereon, and the method comprises:

4. An evaporation offset measurement method of an evaporation station, comprising:

and measuring the surface of the intercepted Si fragment through SEM, and measuring the offset between the metal on the section of the obtained Si sheet and the second alignment mark, wherein the offset is the evaporation offset of the evaporation table.

5. An evaporation offset measurement method of an evaporation station according to claim 4, wherein;

the photoetching pattern with the preset shape is a photoetching pattern formed by arranging a plurality of strip-shaped patterns according to a preset sequence; each bar graph's length is 1mm, and the width is 0.6um.

6. An evaporation offset measurement system of an evaporation station, comprising: the device comprises a first alignment marking module, a first error module, a second error module and a calculating module;

7. The evaporation offset measurement system of an evaporation station of claim 6, wherein the calculation module is configured to calculate the evaporation offset of the evaporation station according to the first overlay error and the second overlay error, specifically:

8. The evaporation offset measurement system of an evaporation table according to claim 6, wherein the deposition and lithography process is performed on the Si wafer so that a deposition layer having an alignment lithography pattern is deposited on the Si wafer, and the deposition process comprises:

9. An evaporation offset measurement system of an evaporation station, comprising: the second alignment mark module, the interception module and the measurement module;

the second alignment marking module is used for depositing and photoetching a Si sheet so as to deposit a deposition layer with a photoetching pattern in a preset shape on the Si sheet; the second alignment mark is used for carrying out plasma etching on the deposition layer to form a second alignment mark corresponding to the photoetching pattern with the preset shape;

10. An evaporation offset measurement system of an evaporation station as claimed in claim 9, wherein;