CN105206547B - A kind of method for measuring dual imaging alignment precision - Google Patents
A kind of method for measuring dual imaging alignment precision Download PDFInfo
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- CN105206547B CN105206547B CN201510627068.7A CN201510627068A CN105206547B CN 105206547 B CN105206547 B CN 105206547B CN 201510627068 A CN201510627068 A CN 201510627068A CN 105206547 B CN105206547 B CN 105206547B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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Abstract
The invention belongs to field of semiconductor manufacture, discloses a kind of method for measuring dual imaging alignment precision, provides one piece of silicon chip first, silicon chip has the first mask layer, the second mask layer and substrate successively from top to bottom；Then the first mask layer is etched to form the first figure；Then the second mask layer is etched to form second graph；Followed by judging to whether there is alignment deviation between the first figure and second graph, alignment mark layer is such as formed, then there are alignment deviation；Finally alignment mark layer is measured, draws alignment offset.Present invention is particularly suitable for the alignment precision measurement of the double-pattern formed on same layer substrate, alignment mark layer in the present invention is easy to gather, the signal strength of alignment mark is greatly enhanced, the alignment offset for accurately obtaining dual imaging can be facilitated in a short time.
Description
Technical field
The invention belongs to technical field of manufacturing semiconductors, is related to a kind of method for measuring dual imaging alignment precision.
Background technology
With the continuous progressive of integrated circuit fabrication process, the volume and critical size of semiconductor devices are just becoming more next
It is smaller.As critical size is less and less, IC industry faces more and more challenges.The photoetching such as photoetching double exposure point
Resolution strengthens technology and is realizing that 32nm technology nodes have been sent to great expectations.Due to production caused by litho machine software and hardware technology progress
The raising of rate, the significance level of double-pattern exposure technology are growing day by day, it has also become industry 32nm mainstream solutions at present.
The starting point of double-pattern exposure technology is will to be split into photoetching beyond the design configuration of litho machine limiting resolution
Two layer patterns of the resolution ratio that machine can reach, and corresponding two pieces of reticles are produced, then pass through photoetching-etching-photoetching-quarter
In the Dual graphing technique of erosion, the final graphics of demand are finally reached.
Since second of exposure of double-pattern exposure is carried out in the basis of first time exposure figure or gap, this
Kind technique is more demanding to the alignment precision of photoetching, it is desirable to the about alignment precision of 2nm.Double-pattern exposure formed figure be in
Shape is superimposed, has eventually formed whole device architecture.The structure, if the deviation stacked is too big, will make just as building mansion
Total fails, and therefore, the alignment precision of photoetching is particularly important.
The height of the alignment precision of existing photoetching is usually characterized by alignment precision measurement, i.e. the etching work when this layer
After skill, that is, need to measure the alignment condition of current layer etching technics and preceding layer process.If designed typically in reticle
Dry rectangular-ambulatory-plane mark, is copied on silicon chip by etching technics, after the completion of each etching technics, passes through two Back Words of optical measurement
Shape mark come judge X, Y-direction deviation.
The three-dimensional structure of various components is broken down into the litho pattern of tens layers two dimension in production.It is good in order to reach
Device performance, each layer litho pattern will ensure accurate alignment alignment (Overlay) between layers.Alignment precision measurement is logical
It is often that an alignment precision measurement pattern (Overlay Mark) is respectively placed in the figure of upper and lower two lithography layers, passes through measurement
The deviation of the relative position of two alignment figures, to ensure the alignment between two layers of litho pattern.
A-1d is please referred to Fig.1, Fig. 1 a-1d are the silicon chip structure diagrams of alignment precision measuring method in the prior art, first
First graphical photoresist etches the first hard mask and the second hard mask (as shown in Figure 1a) respectively；Then special measurement equipment is passed through
Optical lens calculate the overlay mark center (as shown in Figure 1 b) of first layer；Then the light of special measurement equipment is passed through
Learn the overlay mark center (as illustrated in figure 1 c) that camera lens calculates the second layer；Finally by two layers of overlay mark center
Coordinate subtract each other, obtain departure (as shown in Figure 1 d).
However, alignment precision measuring method step is relatively complicated in the prior art, therefore, there is an urgent need for carry by those skilled in the art
For a kind of method for measuring dual imaging alignment precision, fast and easy accurately obtains the alignment precision of dual imaging.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of method for measuring dual imaging alignment precision, fast and easy
Accurately obtain the alignment precision of dual imaging.
In order to solve the above technical problem, the present invention provides a kind of method for measuring dual imaging alignment precision, including
Following steps：
Step S01, there is provided one piece of silicon chip, the silicon chip from top to bottom successively have the first mask layer, the second mask layer with
And substrate；
Step S02, performs etching first mask layer using photoetching and etching technics, so that first mask layer
With multiple first figures；
Step S03, performs etching second mask layer using photoetching and etching technics, so that second mask layer
With multiple second graphs；
Step S04, judges to whether there is alignment deviation between the first figure and second graph；Wherein, as formed by first
The alignment mark layer that mask layer and the second mask layer collectively constitute, then there are alignment deviation, continue step S05, such as not
The alignment mark layer collectively constituted by the first mask layer and the second mask layer is formed, then there is no alignment deviation, terminates measurement
Process；
Step S05, measures the alignment mark layer, draws alignment offset.
Preferably, in the step S05, the alignment mark layer is measured using scanning electron microscope.
Preferably, in the step S02, following steps are specifically included：
First, the first anti-reflecting layer and the first photoresist layer are coated with successively on the first mask layer；
Then, the first photoresist layer is patterned to form the first figure, and by the first pattern transfer to first mask
On layer；
Finally, the first anti-reflecting layer and the first photoresist layer are removed.
Preferably, the etching stopping of first figure is in the upper surface of second mask layer.
Preferably, first anti-reflecting layer and the first photoetching are removed using wet-etching technology or dry etch process
Glue-line.
Preferably, in the step S03, following steps are specifically included：
First, the second anti-reflecting layer and the second photoresist layer are coated with successively on the second mask layer；
Then, the second photoresist layer is patterned to form second graph, and second graph is transferred to second mask
On layer；
Finally, the second anti-reflecting layer and the second photoresist layer are removed.
Preferably, the etching stopping of the second graph is in the upper surface of the substrate.
Preferably, second anti-reflecting layer covers first figure.
Preferably, the second anti-reflecting layer and the second photoresist are removed using wet-etching technology or dry etch process
Layer.
Compared with currently existing scheme, the present invention provides a kind of method for measuring dual imaging alignment precision, first the
The first figure is formed on one mask layer, then forms second graph on the second mask layer, by contrasting the first figure and the
Two figures, judge whether alignment deviation occur, such as form corresponding alignment mark layer, and then by measuring the line width being etched
Obtain alignment offset.Alignment precision present invention is particularly suitable for the double-pattern formed on same layer substrate measures, this
Alignment mark layer in invention is easy to gather, and greatly enhances the signal strength of alignment mark, can facilitate in a short time accurately
Obtain the alignment offset of dual imaging.
Brief description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, below will be to needed in the embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 a-1d are the silicon chip structure diagrams of alignment precision measuring method in the prior art；
Fig. 2 is the flow diagram for the method that dual imaging alignment precision is measured in the present invention；
Fig. 3 a-3e are the silicon chip structure diagrams of alignment precision measuring method in the present invention.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with implementation of the attached drawing to the present invention
Mode is described in further detail.Those skilled in the art can understand the present invention easily as the content disclosed by this specification
Other advantages and effect.The present invention can also be embodied or applied by other different embodiments, this explanation
Every details in book can also be based on different viewpoints and application, without departing from the spirit of the present invention carry out various modifications or
Change.
Above and other technical characteristic and beneficial effect, by conjunction with the embodiments and attached drawing to the present invention measurement dual imaging
The method of alignment precision is described in detail.Fig. 2 is the flow signal for the method that dual imaging alignment precision is measured in the present invention
Figure；Fig. 3 a-3e are the silicon chip structure diagrams of alignment precision measuring method in the present invention.
As shown in Fig. 2, the present invention provides a kind of method for measuring dual imaging alignment precision, comprise the following steps：
Step S01, there is provided one piece of silicon chip, silicon chip from top to bottom successively have the first mask layer 10, the second mask layer 20 with
And substrate 30 (as shown in Figure 3a).
Specifically, in this step, this area conventional means, material can be used to form each level.
Step S02, performs etching first mask layer 10 using photoetching and etching technics, so that the first mask layer 10
With multiple first figures 40 (as shown in Fig. 3 b, 3c).
Specifically, following steps are specifically included in this step：First, the first anti-reflective is coated with successively on the first mask layer 10
Penetrate 11 and first photoresist layer 12 of layer；Then, the first photoresist layer 12 is patterned to form the first figure, and by the first figure
It is transferred on first mask layer 10, the etching stopping of the first figure 40 is in the upper surface of the second mask layer 20；Finally, remove
First anti-reflecting layer 11 and the first photoresist layer 12, wherein wet-etching technology or dry etch process can be used to remove first
11 and first photoresist layer 12 of anti-reflecting layer.
Step S03, performs etching second mask layer 20 using photoetching and etching technics, so that the second mask layer 20
With multiple second graphs 50 (as shown in Fig. 3 d, 3e).
Specifically, this step specifically includes following steps：First, the second antireflection is coated with successively on the second mask layer 20
21 and second photoresist layer 22 of layer, wherein, the second anti-reflecting layer 21 covers first figure 40；Then, second is patterned
Second graph is transferred on the second mask layer 20, the etch-stop of second graph 50 by photoresist layer 22 with forming second graph
Terminate in the upper surface of substrate 30；Finally, the second anti-reflecting layer 21 and the second photoresist layer 22 are removed, wherein, carved using wet method
Etching technique or dry etch process remove the second anti-reflecting layer 21 and the second photoresist layer 22.
Step S04, judges to whether there is alignment deviation between the first figure 40 and second graph 50；Wherein, as formed by
The alignment mark layer that first mask layer 10 and the second mask layer 20 collectively constitute, then there are alignment deviation, continue step
S05, does not such as form the alignment mark layer collectively constituted by the first mask layer 10 and the second mask layer 20, then inclined there is no alignment
Difference, terminates measurement process.
Specifically, the alignment mark layer in this step is the overlapping region of the first figure 40 and second graph 50, by looking into
Alignment mark layer is seen to determine whether there is alignment deviation, such as the first figure 40 is completely overlapping with second graph 50, then is not present
There is overlapping region and Non-overlapping Domain with second graph 50 in alignment deviation, such as the first figure 40, then show set occurred
Carve deviation.Then stop measuring there is no alignment deviation, alignment deviation such as occur, then carry out continuing to measure alignment offset.
Step S05, measures the alignment mark layer, draws alignment offset.
Specifically, in the present embodiment, it is preferred to use scanning electron microscope measures the alignment mark layer, in this step
Alignment mark layer is the overlapping region of the first figure 40 and second graph 50, due to being deposited between the first figure 40 and second graph 50
In deviation, line width, that is, alignment offset of Non-overlapping Domain, total line width of the first figure 40 and second graph 50 is subtracted to fiducial mark
Remember the line width (i.e. the line width of overlapping region) of layer, you can draw alignment offset.
In conclusion the present invention provides a kind of method for measuring dual imaging alignment precision, first in the first mask layer
The first figure 40 is formed on 10, then on the second mask layer 20 formed second graph 50, by contrast the first figure 40 and
Second graph 50, judges whether alignment deviation occur, such as forms corresponding alignment mark layer, and then be etched by measurement
Line width obtains alignment offset.Present invention is particularly suitable for the alignment precision survey of the double-pattern formed on same layer substrate
Measure, the alignment mark layer in the present invention is easy to gather, and greatly enhances the signal strength of alignment mark, can facilitate standard in a short time
The alignment offset of true acquisition dual imaging.
Some preferred embodiments of the present invention have shown and described in described above, but as previously described, it should be understood that the present invention
Be not limited to form disclosed herein, be not to be taken as the exclusion to other embodiment, and available for various other combinations,
Modification and environment, and above-mentioned teaching or the technology or knowledge of association area can be passed through in the scope of the invention is set forth herein
It is modified., then all should be in this hair and changes and modifications made by those skilled in the art do not depart from the spirit and scope of the present invention
In the protection domain of bright appended claims.
Claims (9)
- A kind of 1. method for measuring dual imaging alignment precision, it is characterised in that comprise the following steps：Step S01, there is provided one piece of silicon chip, the silicon chip have the first mask layer, the second mask layer and lining successively from top to bottom Bottom；Step S02, performs etching first mask layer using photoetching and etching technics, so that first mask layer has Multiple first figures；Step S03, performs etching second mask layer using photoetching and etching technics, so that second mask layer has Multiple second graphs；Step S04, judges to whether there is alignment deviation between the first figure and second graph；Wherein, the first figure and the second figure The overlapping region of shape is alignment mark layer, and such as the first figure overlapping region and Non-overlapping Domain occurs with second graph, then There are alignment deviation, continues step S05, and such as the first figure and second graph are completely overlapped, then there is no alignment deviation, knot Beam measurement process；Step S05, measures the alignment mark layer, draws alignment offset.
- 2. the method for measurement dual imaging alignment precision according to claim 1, it is characterised in that in the step S05, The alignment mark layer is measured using scanning electron microscope.
- 3. the method for measurement dual imaging alignment precision according to claim 1, it is characterised in that in the step S02, Specifically include following steps：First, the first anti-reflecting layer and the first photoresist layer are coated with successively on the first mask layer；Then, the first photoresist layer is patterned to form the first figure, and by the first pattern transfer to first mask layer；Finally, the first anti-reflecting layer and the first photoresist layer are removed.
- 4. the method for measurement dual imaging alignment precision according to claim 1, it is characterised in that described in step S02 The etching stopping of first figure is in the upper surface of second mask layer.
- 5. the method for measurement dual imaging alignment precision according to claim 3, it is characterised in that using wet etching work Skill or dry etch process remove first anti-reflecting layer and the first photoresist layer.
- 6. the method for measurement dual imaging alignment precision according to claim 1, it is characterised in that in the step S03, Specifically include following steps：First, the second anti-reflecting layer and the second photoresist layer are coated with successively on the second mask layer；Then, the second photoresist layer is patterned to form second graph, and second graph is transferred on second mask layer；Finally, the second anti-reflecting layer and the second photoresist layer are removed.
- 7. the method for measurement dual imaging alignment precision according to claim 1, it is characterised in that described in step S03 The etching stopping of second graph is in the upper surface of the substrate.
- 8. the method for measurement dual imaging alignment precision according to claim 6, it is characterised in that second antireflection Layer covers first figure.
- 9. the method for measurement dual imaging alignment precision according to claim 6, it is characterised in that using wet etching work Skill or dry etch process remove the second anti-reflecting layer and the second photoresist layer.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109307981B (en) * | 2017-07-26 | 2022-03-22 | 天津环鑫科技发展有限公司 | Photoetching process for GPP production |
| CN109177518A (en) * | 2018-08-01 | 2019-01-11 | 歌尔股份有限公司 | The determination method, apparatus and electronic equipment of spray printing web plate positional shift state |
| CN110364449B (en) * | 2019-07-24 | 2022-06-14 | 上海华力集成电路制造有限公司 | Monitoring method for gate oxide nitrogen-doped annealing temperature |
| CN113206020B (en) * | 2021-04-08 | 2023-02-14 | 深圳市时代速信科技有限公司 | Evaporation offset measurement method and system of evaporation table |
| CN113835309B (en) * | 2021-09-24 | 2023-07-21 | 长江先进存储产业创新中心有限责任公司 | Detection structure and detection method for alignment precision of double imaging process |
| CN116977244A (en) * | 2022-04-24 | 2023-10-31 | 长鑫存储技术有限公司 | Method and device for detecting measurement image, semiconductor device and storage medium |
| CN115145127B (en) * | 2022-09-05 | 2022-11-25 | 上海传芯半导体有限公司 | Detection structure of alignment precision, preparation method thereof and detection method of alignment precision |
| CN115390374B (en) * | 2022-11-01 | 2023-04-04 | 睿力集成电路有限公司 | Overlay error measurement method and method for controlling semiconductor manufacturing process |
| CN115793413B (en) * | 2022-12-22 | 2024-06-18 | 上海铭锟半导体有限公司 | Super-resolution pattern implementation method and device based on alignment difference and double lithography |
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