CN113138328A - System and method for testing SOA (service oriented architecture) characteristics of MOS (metal oxide semiconductor) tube - Google Patents

System and method for testing SOA (service oriented architecture) characteristics of MOS (metal oxide semiconductor) tube Download PDF

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Publication number
CN113138328A
CN113138328A CN202110403394.5A CN202110403394A CN113138328A CN 113138328 A CN113138328 A CN 113138328A CN 202110403394 A CN202110403394 A CN 202110403394A CN 113138328 A CN113138328 A CN 113138328A
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soa
sampling
oscilloscope
mos tube
mos
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赵国玲
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Shandong Yingxin Computer Technology Co Ltd
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Shandong Yingxin Computer Technology Co Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor

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Abstract

The application discloses a system and a method for testing SOA characteristics of MOS tubes, wherein the system comprises: the device comprises a PC controller, an oscilloscope, a tested MOS tube, a power supply and an electronic load instrument, wherein the input end of the tested MOS tube is connected with the power supply, the output end of the MOS tube is connected with the electronic load instrument through a load line, the tested MOS tube is also connected with the oscilloscope through a probe, and the PC controller is respectively connected with the electronic load instrument, the power supply and the oscilloscope through USB-GPIB lines. The method comprises the following steps: acquiring SOA SPEC data of the MOS tube; carrying out full-load power-on SOA test on the MOS tube to be tested according to the obtained command and SOA SPEC data of the MOS tube; and carrying out short circuit power failure SOA test on the MOS tube to be tested according to the obtained command and SOA SPEC data of the MOS tube. By the method and the device, the accuracy and the test efficiency of the MOS tube SOA characteristic test result can be effectively improved.

Description

System and method for testing SOA (service oriented architecture) characteristics of MOS (metal oxide semiconductor) tube
Technical Field
The present application relates to the field of a Printed Circuit Board (PCB) MOS (metal oxide semiconductor) transistor performance testing technology, and in particular, to a system and a method for testing an SOA (silicon on insulator) characteristic of an MOS transistor.
Background
With the development of server technology, the integrated functions of the server are more and more, correspondingly, the power consumption of the server is also more and more, and the input current of the MOS tube on the PCB of the server has current impact when the MOS tube is fully loaded and electrified and is abnormally short-circuited and powered down. In order to avoid the board burning danger of the PCB board, it is necessary to ensure that the SOA (Safe Operating Area) characteristic of the MOS transistor is good, so it is an important technical problem to test the SOA characteristic of the MOS transistor of the server PCB board.
At present, MOS (metal oxide semiconductor) tube S in PCB (printed Circuit Board) is testedThe methods for OA characterization are, in general: connecting V with oscilloscope CH1VDSVoltage, CH2 is connected to the current of Vin. And the output end of the MOS tube to be tested is welded with a load line and is connected to a load instrument. When the power-on SOA is tested, the oscilloscope is manually adjusted, CH2 is triggered, the load instrument sets full-load current and normally outputs the full-load current, the mainboard is powered on, and the oscilloscope V is usedVDSAnd triggering a falling edge to capture the picture. Hand operated clip VVDSAnd (4) a falling edge time interval t, and the maximum current value Imax and the maximum voltage value Vmax in the time period are captured. When Short circuit power failure SOA is detected after power-on, the MOS tube is powered on, the Short key of the electronic load instrument is clicked, and the oscilloscope VVDSTriggering by a rising edge, capturing a picture, wherein one or more positive current pulses appear in a CH2 channel, testing a time interval t for manually capturing the current pulses, and capturing a maximum current value Imax and a maximum voltage value Vmax in the time period.
However, in the existing method for testing the SOA characteristic of the MOS transistor in the PCB, because sampling points are too few, the description accuracy of the SOA characteristic of the MOS transistor is not high, the current is directly clamped manually, and because a current gun has an error, the accuracy of a test result is also not high, and particularly, the error is larger for a small current test. After the test is finished, when the test result is compared, the test data needs to be manually compared with an SOA SPEC (safe operating area characteristic) curve, and the manual comparison error is large, so that the accuracy of the test result is poor.
Disclosure of Invention
The application provides a system and a method for testing SOA (service oriented architecture) characteristics of an MOS (metal oxide semiconductor) tube, which aim to solve the problem that the accuracy of a test result is poor due to a testing method in the prior art.
In order to solve the technical problem, the embodiment of the application discloses the following technical scheme:
a system for testing the SOA characteristics of MOS transistors, the system comprising: the device comprises a PC controller, an oscilloscope, a tested MOS tube, a power supply and an electronic load instrument, wherein the input end of the tested MOS tube is connected with the power supply, the output end of the MOS tube is connected with the electronic load instrument through a load line, the tested MOS tube is also connected with the oscilloscope through a probe, and the PC controller is respectively connected with the electronic load instrument, the power supply and the oscilloscope through USB-GPIB (Universal Serial Bus, General-Purpose-Interface Bus) lines;
the PC controller is used for storing SOA SPEC data of the MOS tube to be tested, controlling the output of the power supply to be switched on and off, controlling the electronic load instrument to regulate output current and short-circuit operation, controlling the oscilloscope to execute grab drawing and card sampling, and generating a test result according to the sampling result and the SOA SPEC data.
Optionally, the CH1 input end of the oscilloscope is used for collecting V of the MOS transistorVDSThe CH2 input end of the oscilloscope is used for collecting the voltage V at two ends of the input sampling resistor in the MOS tubeSensor。
Optionally, the input sampling resistor is a precision resistor.
Optionally, the PC controller comprises:
the storage module is used for storing SOA SPEC data of the MOS tube to be tested;
the power supply control module is used for controlling the output of the power supply to be switched on and off;
the electronic load instrument control module is used for controlling the electronic load instrument to regulate output current and short-circuit operation;
the oscilloscope control module is used for controlling the oscilloscope to execute image capture and sampling;
the calculation module is used for calculating the current at the two ends of the sampling resistor according to the sampling result;
and the drawing module is used for comparing the current at two ends of the sampling resistor with SOA SPEC data and drawing a curve according to the comparison result.
Optionally, the oscilloscope control module comprises:
a full-load power-on oscilloscope grapple control unit for grabbing VVDSStarting triggering in a falling edge time interval and capturing the screenshot when the triggering is finished;
a full-load power-on oscilloscope card sampling control unit for sampling at VVDSPerforming sampling for every set time delta t in falling edge time interval, whereinWhere Δ t is (t2-t1)/n, and t2 is oscilloscope VVDSThe falling edge trigger end time t1 is oscilloscope VVDSThe falling edge starts to trigger the moment, and n is the number of sampling of the card;
the short circuit power failure oscilloscope snapshot control unit is used for grabbing screenshots when triggering starts and triggering ends in a current pulse time interval;
and the short circuit power failure oscilloscope card sampling control unit is used for performing card sampling once every set time delta t2 in each current pulse time interval, wherein delta t2 is (t4-t3)/m, t4 is the oscilloscope current pulse ending moment, t3 is the oscilloscope current pulse starting moment, m is the number of card sampling, and the number of current pulses is one or more.
A method for testing SOA characteristics of MOS tubes, comprising:
acquiring SOA SPEC data of the MOS tube;
carrying out full-load power-on SOA test on the MOS tube to be tested according to the obtained command and SOA SPEC data of the MOS tube;
and carrying out short circuit power failure SOA test on the MOS tube to be tested according to the obtained command and SOA SPEC data of the MOS tube.
Optionally, the performing a full-load power-on SOA test on the MOS transistor to be tested according to the obtained command and SOA SPEC data of the MOS transistor includes:
according to the obtained command, grabbing VVDSStarting triggering in a falling edge time interval and capturing the screenshot when the triggering is finished;
at VVDSWithin the falling edge time interval, carrying out one-time sampling by clamping at set time intervals delta t to obtain the voltage V of the MOS tube at each sampling momentVDSAnd the voltage V at two ends of the sampling resistor in the MOS tubeSensorWherein, the delta t is (t2-t1)/n, and t2 is oscilloscope VVDSThe falling edge trigger end time t1 is oscilloscope VVDSThe falling edge starts to trigger the moment, n is the number of the sampling of the card, when t2-t1<N is more than or equal to 20 and less than 100 when the time is 10ms, and n is more than or equal to 100 and less than 1000 when the time is t2-t1 and more than or equal to 10 ms;
according to the voltage V at two ends of the sampling resistor in the MOS tube at each sampling momentSensorAnd sampling resistance in MOS tube, calculating voltage VSensorRelative to the current I across the sampling resistorSensor；
And comparing the current at two ends of the sampling resistor with SOA SPEC data, and drawing a curve according to the comparison result.
Optionally, when t2-t1 is less than 10ms, n is 20, and when t2-t1 is greater than or equal to 10ms, n is 100.
Optionally, the performing short-circuit power-down SOA test on the MOS transistor to be tested according to the obtained command and SOA SPEC data of the MOS transistor includes:
capturing screenshots of the current pulse at the beginning and the end of triggering within a time interval according to the acquired command;
in each current pulse time interval, performing sampling once every set time delta t2 to obtain the voltage V of the MOS tube at each sampling momentVDSAnd the voltage V at two ends of the sampling resistor in the MOS tubeSensorWherein, Δ t2 is (t4-t3)/m, t4 is the end time of the current pulse of the oscilloscope, t3 is the start time of the current pulse of the oscilloscope, m is the number of sampling cards, when the pulse time interval is less than or equal to 10ms, m is more than or equal to 20 and less than 100, when the pulse time interval is more than 10ms, m is more than or equal to 100 and less than 1000, and the number of the current pulses is one or more;
according to the voltage V at two ends of the sampling resistor in the MOS tube at each sampling momentSensorAnd sampling resistance in MOS tube, calculating voltage VSensorRelative to the current I across the sampling resistorSensor；
And comparing the current at two ends of the sampling resistor with SOA SPEC data, and drawing a curve according to the comparison result.
Alternatively, m is 20 when the pulse interval is 10ms, and is 100 when the pulse interval is greater than 10 ms.
The technical scheme provided by the embodiment of the application can have the following beneficial effects:
the application provides a system for testing MOS pipe SOA characteristic, and this system mainly includes: PC controller, oscilloscope, MOS pipe under test, power and electronic load appearance. The PC controller is respectively connected with the power supply through a USB-GPIB wireThe sub-load instrument, the power supply and the oscilloscope are connected, the input end of the MOS tube is connected with the power supply, and the PC controller can control the power supply to electrify the MOS tube, so that full-load electrifying test is carried out. The output end of the MOS tube is connected with an electronic load instrument through a load line, so that the electronic load instrument sets full load current according to the instruction of the PC controller and normally outputs the full load current to electrify the mainboard, the MOS tube to be tested is also connected with an oscilloscope through a probe, and the oscilloscope V is connected with a voltage sourceVDSAnd when the falling edge is triggered, the picture is captured in time according to the instruction of the PC controller. In the embodiment, when the card takes samples after the PC controller controls the oscilloscope to execute the grappling, the time can be set for sampling for multiple times according to different time intervals taken by different test cards, so that a plurality of test sampling points are obtained in the sampling mode, one point in the test result can be changed into a curve, and the accuracy of the test result is greatly improved. The PC controller is used for controlling the operations of power supply on-off, output current and short circuit of the electronic load instrument and the like, and automatically controlling the oscilloscope to capture the image. The current sampling is also automatically clamped, so that the current sampling precision can be effectively improved, and the accuracy of a test result is further improved.
The method comprises the steps of firstly obtaining SOA SPEC data of the MOS tube, namely SOA standard reference data, and then sequentially carrying out full-load power-on SOA test and short-circuit power-down SOA test on the MOS tube to be tested according to the obtained command and the SOA SPEC data. In full-load power-on SOA test and short-circuit power-down SOA test, sampling is carried out once at set time intervals in respective sampling time intervals, and sampling points are multiple, so that sampling can be carried out for multiple times in the time intervals, an SOA curve in SPEC is formed, the SOA characteristics of an MOS tube can be described more accurately, and the accuracy of a test result is improved. In addition, according to the embodiment, full-load power-on SOA test and short-circuit power-down SOA test of the MOS tube to be tested are respectively carried out according to the obtained instruction, so that automatic test is realized, compared with manual parameter adjustment, errors can be effectively reduced, and the test efficiency and the accuracy of the test result are greatly improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and together with the description, serve to explain the principles of the application.
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a system for testing an SOA characteristic of a MOS transistor according to an embodiment of the present application;
FIG. 2 is a SOA characteristic curve diagram of a MOS transistor in the embodiment of the present application;
FIG. 3 is a schematic diagram of SOA test of MOS transistor fully loaded and powered up;
FIG. 4 is a schematic diagram of an SOA test for short circuit and power failure of an MOS transistor;
fig. 5 is a schematic flowchart of a method for testing an SOA characteristic of a MOS transistor according to an embodiment of the present application.
Detailed Description
In order to make those skilled in the art better understand the technical solutions in the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
For a better understanding of the present application, embodiments of the present application are explained in detail below with reference to the accompanying drawings.
Example one
Referring to fig. 1, fig. 1 is a schematic structural diagram of a system for testing an SOA characteristic of a MOS transistor according to an embodiment of the present application. As can be seen from fig. 1, the system for testing the SOA characteristic of the MOS transistor in this embodiment mainly includes: PC controller, oscilloscope, MOS pipe under test, power and electronic load appearance. The PC controller is respectively connected with the electronic load instrument, the power supply and the oscilloscope through USB-GPIB lines. The input end of the MOS tube to be tested is connected with a power supply, the power supply adopts a direct current power supply, namely a DC Source, and the DC Source supplies power to the MOS tube to be tested according to the instruction of the PC controller, so that the full-load power-on SOA test is executed. The output end of the MOS tube is connected with an electronic load instrument through a load line, and the electronic load instrument adjusts output current according to the control of the PC controller and realizes short circuit power failure SOA test. The tested MOS tube is also connected with an oscilloscope through a probe rod, so that a test result is fed back in time.
The PC controller in the embodiment is mainly used for storing SOA SPEC data of the MOS tube to be tested, controlling the output of the power supply to be switched on and off, controlling the electronic load instrument to regulate output current and short-circuit operation, controlling the oscilloscope to execute image capture and sampling, and generating a test result according to the sampling result and the SOA SPEC data.
In this embodiment, one of the functions of the PC controller is to store SOA SPEC data of the MOS transistor to be tested, that is, to store the SOA SPEC data of the MOS transistor to a database, and to be represented by a curve graph, where the SOA characteristic curve graph of the MOS transistor is shown in fig. 2.
The system in the embodiment is mainly used for carrying out full-load power-on SOA test and short-circuit power-down SOA test on the MOS tube. The schematic diagram of the MOS transistor full-load power-on SOA test is shown in fig. 3, and the schematic diagram of the MOS transistor short-circuit power-down SOA test is shown in fig. 4.
In this embodiment, the CH1 input terminal of the oscilloscope is used for collecting V of the MOS transistorVDSI.e. input and output voltages, VVDSGenerally, the input end is positive, the output end is negative, and a differential probe is connected, wherein the positive pole of the differential probe is connected with the input end, and the negative pole of the differential probe is connected with the output end. The CH2 input end of the oscilloscope is used for collecting the voltage V at two ends of the input sampling resistor in the MOS tubeSensorAlso known as input Sensor resistance, sampling resistance.
Furthermore, the input sampling resistor is a precision resistor in the embodiment, so that the precision of the sampling current value can be improved, and the accuracy of the test result is further improved.
The PC controller in this embodiment mainly includes: the device comprises a storage module, a power supply control module, an electronic load instrument control module, an oscilloscope control module, a calculation module and a drawing module. The device comprises a storage module, a detection module and a control module, wherein the storage module is used for storing SOA SPEC data of a tested MOS tube; the power supply control module is used for controlling the output of the power supply to be switched on and off; the electronic load instrument control module is used for controlling the electronic load instrument to regulate output current and short-circuit operation; the oscilloscope control module is used for controlling the oscilloscope to execute image capture and sampling; the calculation module is used for calculating the current at the two ends of the sampling resistor according to the sampling result; and the drawing module is used for comparing the current at two ends of the sampling resistor with SOA SPEC data and drawing a curve according to the comparison result.
The oscilloscope control module further comprises: the device comprises a full-load power-on oscilloscope grab control unit, a full-load power-on oscilloscope card sampling control unit, a short-circuit power-down oscilloscope grab control unit and a short-circuit power-down oscilloscope card sampling control unit.
Wherein, the full-load electrification oscilloscope grapple control unit is used for grapping VVDSThe trigger begins within the falling edge time interval and the screenshot at the end of the trigger. A full-load power-on oscilloscope card sampling control unit for sampling at VVDSPerforming sampling for one time every set time delta t in the falling edge time interval, wherein the delta t is (t2-t1)/n, and t2 is an oscilloscope VVDSThe falling edge trigger end time t1 is oscilloscope VVDSAnd n is the number of sampling of the card at the moment when the falling edge starts to trigger. And the short circuit power failure oscilloscope snapshot control unit is used for grabbing the screenshots at the beginning and the end of triggering within the current pulse time interval. And the short circuit power failure oscilloscope card sampling control unit is used for performing card sampling once every set time delta t2 in each current pulse time interval, wherein delta t2 is (t4-t3)/m, t4 is the oscilloscope current pulse ending moment, t3 is the oscilloscope current pulse starting moment, m is the number of card sampling, and the number of current pulses is one or more.
As can be seen from fig. 3, is fully loadedDuring electric SOA test, after the oscilloscope captures the screenshot, VVDSThe falling edge time interval is t2-t 1. And the full-load power-on oscilloscope card sampling control unit performs card sampling once at set time delta t within the time interval of t2-t 1. The PC controller controls the oscilloscope to automatically card V at t1VDSAnd VSensorAnd recording and re-capturing V at t1 +. DELTA.t, t1+ 2. DELTA.t … …VDSAnd VSensorV recorded until t2VDSAnd VSensor. The PC controller samples V according to the input sampling resistanceSensorConverted into Vin current value ISensor. Mixing t2-t1, n +1 group VSensorAnd ISensorAnd marking the data in a SOA SPEC curve chart of the MOS tube with the corresponding model, automatically comparing the data with SOA SPEC data, and automatically outputting a result.
As can be seen from fig. 4, when the MOS transistor short-circuit power-down SOA test is performed, after the oscilloscope captures the screenshot, the PC controller controls the oscilloscope, and the current pulse is triggered, for example, by two pulses, and the PC controller controls the oscilloscope to automatically capture the time t1 and t2 of the pulse 1 and the time t3 and t4 of the pulse 2. The PC controller controls the oscilloscope to take the V at t1VDSAnd VSensorAnd recording, and then capturing V at t1 +. DELTA.t 1, t2+2 × DELTA.t 1 … …VDSAnd VSensorV recorded until t2VDSAnd VSensor. For pulse 2, the same principle is adopted to obtain m +1 groups of VSensorAnd ISensor. The PC controller samples V according to the input sampling resistanceSensorConverted into Vin current value ISensor. Mixing t2-t1, n +1 group VSensorAnd ISensorMarked in SOA spec graphs of MOS tubes of corresponding models, t4-t3 and m +1 groups VSensorAnd ISensorAnd marking the obtained product in an SOA Spec curve chart of the MOS tube with the corresponding model, automatically comparing the obtained product with Spec, and automatically outputting a result.
In this embodiment, the sampling number n of the sampling control unit is taken by the fully-loaded power-on oscilloscope card, and is taken according to VVDSThe falling edge time interval is different when t2-t1<When the time is 10ms, n is more than or equal to 20 and less than 100, and when t2-t1 is more than or equal to 10ms, n is more than or equal to 100 and less than 1000. Same VVDSUnder the falling edge time interval, the larger the value of n is, the smaller the set time delta t is, and the card is takenThe higher the frequency of sampling, the higher the accuracy of the test results. In the present embodiment, it is preferable that the time t2-t1 is between t2 and t1<When the time is 10ms, the value of n is 20, and when the time t2-t1 is more than or equal to 10ms, the value of n is 100. The value can not only ensure the accuracy of the SOA characteristic description of the MOS tube, but also avoid the excessive occupation of more resources by the acquisition points, improve the data acquisition efficiency on the basis of ensuring the accuracy of the test result and save the system resources.
In the same way, the value of the sampling number m of the card of the sampling control unit of the short circuit power failure oscilloscope is different according to different current pulse time intervals, when the pulse time interval is less than or equal to 10ms, m is more than or equal to 20 and less than 100, and when the pulse time interval is more than 10ms, m is more than or equal to 100 and less than 1000. Preferably, m is 20 when the pulse interval is 10ms, and m is 100 when the pulse interval is greater than 10 ms. In this embodiment, there may be a plurality of current pulses of some MOS transistors, and when there are a plurality of current pulses, the short-circuit power-down oscilloscope card sampling control unit sequentially executes the same card sampling operation within each current pulse time interval, which is not described herein again.
Example two
Referring to fig. 5 on the basis of the embodiments shown in fig. 1 to fig. 4, fig. 5 is a schematic flowchart of a method for testing the SOA characteristics of a MOS transistor according to an embodiment of the present application. As can be seen from fig. 5, the method for testing the SOA characteristic of the MOS transistor in this embodiment mainly includes the following steps:
s1: and acquiring SOA SPEC data of the MOS tube.
And acquiring and storing SOA SPEC data of the MOS tube, so that the test data can be conveniently compared with the SOA SPEC data subsequently, and the SOA characteristic of the current MOS tube is determined.
S2: and carrying out full-load power-on SOA test on the MOS tube to be tested according to the obtained command and SOA SPEC data of the MOS tube.
Specifically, step S2 includes the following processes:
s21: according to the obtained command, grabbing VVDSThe trigger begins within the falling edge time interval and the screenshot at the end of the trigger.
S22: at VVDSIn the falling edge time interval, the card is taken once at set time delta tSampling to obtain the voltage V of MOS tube at each sampling momentVDSAnd the voltage V at two ends of the sampling resistor in the MOS tubeSensor。
Wherein, the delta t is (t2-t1)/n, and t2 is an oscilloscope VVDSThe falling edge trigger end time t1 is oscilloscope VVDSThe falling edge starts to trigger the moment, n is the number of the sampling of the card, when t2-t1<When the time is 10ms, n is more than or equal to 20 and less than 100, and when t2-t1 is more than or equal to 10ms, n is more than or equal to 100 and less than 1000.
Wherein the preferable selection of the values of n is as follows: when t2-t1 is less than 10ms, n is 20, and when t2-t1 is more than or equal to 10ms, n is 100.
The sampling quantity can ensure the accuracy of the sampling result, save system resources and avoid the reduction of the testing efficiency caused by overlarge sampling quantity.
S23: according to the voltage V at two ends of the sampling resistor in the MOS tube at each sampling momentSensorAnd sampling resistance in MOS tube, calculating voltage VSensorRelative to the current I across the sampling resistorSensor。
S24: and comparing the current at two ends of the sampling resistor with SOA SPEC data, and drawing a curve according to the comparison result.
With continued reference to fig. 5, the SOA test for full load power-up of the MOS transistor under test is performed, and step S3 is executed: and carrying out short circuit power failure SOA test on the MOS tube to be tested according to the obtained command and SOA SPEC data of the MOS tube.
Specifically, step S3 includes the following processes:
s31: and capturing screenshots of the beginning of triggering and the ending of triggering in the current pulse time interval according to the acquired command.
S32: in each current pulse time interval, performing sampling once every set time delta t2 to obtain the voltage V of the MOS tube at each sampling momentVDSAnd the voltage V at two ends of the sampling resistor in the MOS tubeSensor。
In some embodiments, there are multiple current pulses in some MOS transistors, but the sampling method for each current pulse is the same. When there are a plurality of current pulses, sampling is performed for each current pulse in turn according to step S32.
Wherein, Δ t2 is (t4-t3)/m, t4 is the end time of the current pulse of the oscilloscope, t3 is the start time of the current pulse of the oscilloscope, m is the number of sampling cards, when the pulse time interval is less than or equal to 10ms, m is more than or equal to 20 and less than 100, when the pulse time interval is more than 10ms, m is more than or equal to 100 and less than 1000, and the number of the current pulses is one or more. Wherein, the preferable values of m are as follows: when the pulse time interval is 10ms, m is 20, and when the pulse time interval is more than 10ms, m is 100.
S33: according to the voltage V at two ends of the sampling resistor in the MOS tube at each sampling momentSensorAnd sampling resistance in MOS tube, calculating voltage VSensorRelative to the current I across the sampling resistorSensor。
S34: and comparing the current at two ends of the sampling resistor with SOA SPEC data, and drawing a curve according to the comparison result.
The parts not described in detail in this embodiment can be referred to the embodiments shown in fig. 1 to 4, and the two embodiments can be referred to each other, and are not described again here.
The above description is merely exemplary of the present application and is presented to enable those skilled in the art to understand and practice the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1. A system for testing SOA characteristics of MOS transistors, the system comprising: the device comprises a PC controller, an oscilloscope, a tested MOS tube, a power supply and an electronic load instrument, wherein the input end of the tested MOS tube is connected with the power supply, the output end of the MOS tube is connected with the electronic load instrument through a load line, the tested MOS tube is also connected with the oscilloscope through a probe, and the PC controller is respectively connected with the electronic load instrument, the power supply and the oscilloscope through USB-GPIB lines;
the PC controller is used for storing SOA SPEC data of the MOS tube to be tested, controlling the output of the power supply to be switched on and off, controlling the electronic load instrument to regulate output current and short-circuit operation, controlling the oscilloscope to execute grab drawing and card sampling, and generating a test result according to the sampling result and the SOA SPEC data.
2. The system for testing SOA (service-oriented architecture) characteristics of MOS (metal oxide semiconductor) tubes according to claim 1, wherein the CH1 input end of the oscilloscope is used for acquiring the V of the MOS tubesVDSThe CH2 input end of the oscilloscope is used for collecting the voltage V at two ends of the input sampling resistor in the MOS tubeSensor。
3. The system for testing the SOA characteristics of the MOS transistor as recited in claim 2, wherein the input sampling resistor is a precision resistor.
4. The system for testing the SOA characteristic of the MOS transistor according to any one of claims 1-3, wherein the PC controller comprises:
the storage module is used for storing SOA SPEC data of the MOS tube to be tested;
the power supply control module is used for controlling the output of the power supply to be switched on and off;
the electronic load instrument control module is used for controlling the electronic load instrument to regulate output current and short-circuit operation;
the oscilloscope control module is used for controlling the oscilloscope to execute image capture and sampling;
the calculation module is used for calculating the current at the two ends of the sampling resistor according to the sampling result;
and the drawing module is used for comparing the current at two ends of the sampling resistor with SOA SPEC data and drawing a curve according to the comparison result.
5. The system for testing the SOA characteristic of the MOS transistor according to claim 4, wherein the oscilloscope control module comprises:
a full-load power-on oscilloscope grapple control unit for grabbing VVDSFalling edge time intervalStarting triggering in every other period and capturing pictures when the triggering is finished;
a full-load power-on oscilloscope card sampling control unit for sampling at VVDSPerforming sampling for one time every set time delta t in the falling edge time interval, wherein the delta t is (t2-t1)/n, and t2 is an oscilloscope VVDSThe falling edge trigger end time t1 is oscilloscope VVDSThe falling edge starts to trigger the moment, and n is the number of sampling of the card;
the short circuit power failure oscilloscope snapshot control unit is used for grabbing screenshots when triggering starts and triggering ends in a current pulse time interval;
and the short circuit power failure oscilloscope card sampling control unit is used for performing card sampling once every set time delta t2 in each current pulse time interval, wherein delta t2 is (t4-t3)/m, t4 is the oscilloscope current pulse ending moment, t3 is the oscilloscope current pulse starting moment, m is the number of card sampling, and the number of current pulses is one or more.
6. A method for testing the SOA characteristics of a MOS tube is characterized by comprising the following steps:
acquiring SOA SPEC data of the MOS tube;
carrying out full-load power-on SOA test on the MOS tube to be tested according to the obtained command and SOA SPEC data of the MOS tube;
and carrying out short circuit power failure SOA test on the MOS tube to be tested according to the obtained command and SOA SPEC data of the MOS tube.
7. The method for testing the SOA characteristics of the MOS transistor according to claim 6, wherein the step of performing the full-load power-on SOA test on the MOS transistor to be tested according to the obtained command and the SOA SPEC data of the MOS transistor comprises the following steps:
according to the obtained command, grabbing VVDSStarting triggering in a falling edge time interval and capturing the screenshot when the triggering is finished;
at VVDSWithin the falling edge time interval, carrying out one-time sampling by clamping at set time intervals delta t to obtain the voltage V of the MOS tube at each sampling momentVDSAnd MVoltage V at two ends of sampling resistor in OS tubeSensorWherein, the delta t is (t2-t1)/n, and t2 is oscilloscope VVDSThe falling edge trigger end time t1 is oscilloscope VVDSThe falling edge starts to trigger the moment, n is the number of the sampling of the card, when t2-t1<N is more than or equal to 20 and less than 100 when the time is 10ms, and n is more than or equal to 100 and less than 1000 when the time is t2-t1 and more than or equal to 10 ms;
according to the voltage V at two ends of the sampling resistor in the MOS tube at each sampling momentSensorAnd sampling resistance in MOS tube, calculating voltage VSensorRelative to the current I across the sampling resistorSensor；
And comparing the current at two ends of the sampling resistor with SOA SPEC data, and drawing a curve according to the comparison result.
8. The method for testing the SOA characteristic of the MOS transistor as claimed in claim 7, wherein the value of n is 20 when t2-t1 is less than 10ms, and is 100 when t2-t1 is greater than or equal to 10 ms.
9. The method for testing the SOA characteristics of the MOS transistor according to claim 6, wherein the short-circuit power-down SOA test of the MOS transistor to be tested according to the obtained command and the SOA SPEC data of the MOS transistor comprises the following steps:
capturing screenshots of the current pulse at the beginning and the end of triggering within a time interval according to the acquired command;
in each current pulse time interval, performing sampling once every set time delta t2 to obtain the voltage V of the MOS tube at each sampling momentVDSAnd the voltage V at two ends of the sampling resistor in the MOS tubeSensorWherein, Δ t2 is (t4-t3)/m, t4 is the end time of the current pulse of the oscilloscope, t3 is the start time of the current pulse of the oscilloscope, m is the number of sampling cards, when the pulse time interval is less than or equal to 10ms, m is more than or equal to 20 and less than 100, when the pulse time interval is more than 10ms, m is more than or equal to 100 and less than 1000, and the number of the current pulses is one or more;
according to the voltage V at two ends of the sampling resistor in the MOS tube at each sampling momentSensorAnd sampling resistance in MOS tube, calculating voltage VSensorRelative toCurrent I across the sampling resistorSensor；
And comparing the current at two ends of the sampling resistor with SOA SPEC data, and drawing a curve according to the comparison result.
10. The method for testing the SOA characteristic of the MOS transistor according to claim 9, wherein m is 20 when the pulse time interval is 10ms, and is 100 when the pulse time interval is more than 10 ms.
CN202110403394.5A 2021-04-15 2021-04-15 System and method for testing SOA (service oriented architecture) characteristics of MOS (metal oxide semiconductor) tube Pending CN113138328A (en)

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