CN113128023A - Characterization method for cleanliness of wafer platform of photoetching machine - Google Patents
Characterization method for cleanliness of wafer platform of photoetching machine Download PDFInfo
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- CN113128023A CN113128023A CN202110273756.3A CN202110273756A CN113128023A CN 113128023 A CN113128023 A CN 113128023A CN 202110273756 A CN202110273756 A CN 202110273756A CN 113128023 A CN113128023 A CN 113128023A
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Abstract
The invention discloses a method for representing the cleanliness of a wafer platform of a photoetching machine, which comprises the steps of manufacturing original data; obtaining original data; establishing a flatness model of the wafer platform by using modeling software; and selecting a specific position in the flatness model, wherein the data corresponding to the specific position is displayed in the flatness model. According to the method, a flatness model is established through modeling software based on flatness data of a wafer platform produced by a photoetching machine scanning system, when the flatness standard is known, an over-standard value exceeding the flatness standard can be directly obtained from the model, and a coordinate value of an over-standard position can also be directly obtained; when the coordinates of a particular point of interest are known, the height value at that particular location coordinate may also be obtained directly. Therefore, the quantitative management of the flatness of the wafer platform is realized, and further the quantitative management of the cleanliness of the wafer platform is realized. In addition, the processing process of the data is recorded into a macro, so that the data processing time is saved, and the data processing efficiency is improved.
Description
Technical Field
The invention relates to cleanliness characterization, in particular to a method for characterizing the cleanliness of a wafer platform of a photoetching machine.
Background
The cleanliness of the lithography machine plays an important role in ensuring the quality of products, particularly the cleanliness of a wafer platform in contact with wafers. In order to ensure the cleanliness of the wafer platform, besides the normal cleaning process, the monitoring of the wafer platform is also an important link. The monitored areas of the wafer platform with heavy contamination can be cleaned in a targeted manner to prevent the wafers from being continuously contaminated.
The cleanliness measurement is evaluated based on the flatness data of the wafer platen. The flatness of the wafer platform of the photoetching machine is limited within a certain height range, generally in a nanometer level, and can be strictly tested and ensured to meet the requirements after the photoetching machine is installed and before the photoetching machine is put into production. During the process of using the lithography machine, the wafer platform is also tested, and the flatness data of the wafer platform is obtained, and when the wafer platform has pollutants, the measured flatness data of the pollutant area exceeds a standard value. Based on this, when the measured flatness data of the wafer stage is out of the standard value range, it can be estimated that the contamination exists.
Currently, the cleanliness determination of a wafer platform in the industry depends on a scanning imaging system of a lithography machine, and the system scans the surface of the wafer platform and generates a two-dimensional image with the same shape as the wafer platform according to the measured height value and the corresponding position relation. In the two-dimensional image, the height values are different, and the colors in the two-dimensional image are different, as shown in fig. 1, the operator determines the cleanliness of the wafer platform according to the colors. However, the method has the defects that data of the height value at a specific position cannot be obtained quantitatively, the height value range can be obtained only according to the color, and specific position information corresponding to the height value cannot be obtained, so that the method cannot meet the more and more refined management requirements.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a method for characterizing the cleanliness of a wafer platform of a lithography machine, which can quantitatively obtain a height value of a specific position, can also obtain specific position information corresponding to the height value, and can also obtain a corresponding height value according to given position information.
In order to solve the above technical problems, the characterization method provided by the present invention comprises the following steps:
step A: original data are produced:
defining the flatness of the wafer platform as a basis for representing the cleanliness of the wafer platform;
scanning the wafer platform by using a scanning system of the photoetching machine, and generating a format file;
the format file records flatness data of the wafer platform as original data;
the flatness data comprises coordinate data and height values of the wafer platform, and each height value corresponds to specific coordinate data;
and B: obtaining the raw data;
finding the format file recorded with the flatness data in a data file of the photoetching machine, and exporting the format file;
and C: establishing a flatness model of the wafer platform by using modeling software:
importing the format file into the modeling software, and establishing the flatness model by the modeling software based on the flatness data;
step D: and selecting a specific position in the flatness model, wherein the flatness data corresponding to the specific position is displayed in the flatness model.
Preferably, in step a, the scanning system performs scanning once before carrying a wafer each time and generates one of the format files for the scanning frequency of the wafer platform.
Preferably, the format file in step a is a TXT file.
Preferably, the modeling software in the step C is Excel software;
the step of establishing the flatness model by the Excel software based on the flatness data is as follows:
c1: opening the format file by using the Excel software;
c2: and sequentially assigning the height values in the format file to specific cells according to the position sequence.
Preferably, recording the process of establishing the flatness model by the Excel software as a macro;
and calling the macro when the flatness model is established.
Preferably, the method further comprises the following steps:
step E: defining a flatness standard of the wafer platform, wherein values of the height values exceeding the flatness standard are specially displayed in the flatness model;
preferably, step E includes the steps of:
step E1: defining the lower limit value of the flatness standard of the wafer platform as A, and defining the upper limit value of the flatness standard of the wafer platform as a numerical value B, wherein the lower limit value A is less than or equal to the upper limit value B;
step E2: when any numerical value X in the height values is smaller than the lower limit value A, the height value X is specially displayed in the flatness model;
when any one of the height values Y is greater than the upper limit value B, the height value Y is displayed in the flatness model as a special display different from the height value X.
Preferably, the special display is displaying different colors.
Preferably, the method further comprises the following steps:
step F: outputting the height value of a specific position in the flatness model;
optionally selecting a specific position in the flatness model, the modeling software outputting the height value corresponding to the specific position.
According to the method, a flatness model is established through modeling software based on flatness data of a wafer platform produced by a photoetching machine scanning system, when the flatness standard is known, an over-standard value exceeding the flatness standard can be directly obtained from the model, and a coordinate value of an over-standard position can also be directly obtained; when the coordinates of a particular point of interest are known, the height value at that particular location coordinate may also be obtained directly. Therefore, the quantitative management of the flatness of the wafer platform is realized, and further the quantitative management of the cleanliness of the wafer platform is realized. In addition, the processing process of the data is recorded into a macro, so that the data processing time is saved, and the data processing efficiency is improved.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings needed to be used in the present invention are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a two-dimensional image of wafer platform cleanliness as characterized by the prior art;
FIG. 2 is a flow chart of a first embodiment of the characterization method of the present invention;
FIG. 3 is a partial display of a flatness data list with Excel open according to one embodiment of the characterization method of the present invention;
FIG. 4 is a flatness model established by Excel according to a first embodiment of the characterization method of the present invention;
FIG. 5 is an enlarged view at A in FIG. 4;
FIG. 6 is a flow chart of a second embodiment of the characterization method of the present invention;
FIG. 7 is a flow chart of a third embodiment of the characterization method of the present invention.
Detailed Description
The technical solutions in the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
Referring to fig. 2, a flowchart of a method for characterizing the cleanliness of a wafer platform of a lithography machine according to an embodiment of the present invention is shown, and the method for characterizing the cleanliness of a wafer platform of a lithography machine according to an embodiment of the present invention includes the following steps:
step A: original data are produced:
defining the flatness of the wafer platform as a basis for representing the cleanliness of the wafer platform;
scanning the wafer platform by using a scanning system of the photoetching machine, and generating a format file;
the format file records flatness data of the wafer platform as original data;
the flatness data comprises coordinate data and height values of the wafer platform, and each height value corresponds to specific coordinate data;
and B: obtaining the raw data:
finding the format file recorded with the flatness data in a data file of the photoetching machine, and exporting the format file;
and C: establishing a flatness model of the wafer platform by using modeling software:
importing the format file into the modeling software, and establishing the flatness model by the modeling software based on the flatness data;
step D: and selecting a specific position in the flatness model, wherein the flatness data corresponding to the specific position is displayed in the flatness model.
Preferably, in step a, the scanning system performs scanning once before carrying a wafer each time and generates one of the format files for the scanning frequency of the wafer platform.
Preferably, the format file in step a is a TXT file.
Preferably, the modeling software in the step C is Excel software;
the step of establishing the flatness model by the Excel software based on the flatness data is as follows:
c1: opening the format file by using the Excel software;
c2: and sequentially assigning the height values in the format file to specific cells according to the position sequence.
Preferably, recording the process of establishing the flatness model by the Excel software as a macro;
and calling the macro when the flatness model is established.
In the embodiment of the invention, after the scanning system of the photoetching machine scans the wafer platform, a two-dimensional coordinate system taking the central point of the wafer platform as the origin is established, and the measured height value of the wafer platform corresponds to the specific position in the coordinate system. The TXT format file generated by the lithography machine further comprises height values, X-axis coordinates and Y-axis coordinates, wherein each height value corresponds to a specific X-axis coordinate and a specific Y-axis coordinate.
In the embodiment of the present invention, a TXT format file for recording a height value of a wafer stage is opened by Excel, and after the TXT format file is opened, X-axis data, Y-axis data, and height value data are each aligned in a row, as shown in fig. 3, a value under "X _ gridline _ offsets" in fig. 3 is an X-axis coordinate, a value under "Y _ gridline _ offsets" is a Y-axis coordinate, and a value under "z _ values" is a height value indicating a wafer flatness. In Excel, a Sheet is additionally built, in the Sheet, each row is taken as a unit of Y-axis data, each column is taken as a unit of X-axis data, that is, the Sheet is taken as a two-dimensional coordinate system, and then a height value of a wafer platform measured by a scanning system of a lithography machine is given to a corresponding Excel cell in the Sheet to form a flatness model, as shown in fig. 4. The height value is directly displayed in each cell in the formed flatness model, as shown in fig. 5. In addition, the data processing process is recorded as a macro, and the processing can be directly called when the same data is processed, so that the data processing time is saved, and the data processing efficiency is improved.
In the embodiment of the invention, Excel is used as modeling software, the height value of a wafer platform measured by a scanning system of a photoetching machine is sequentially given to corresponding cells according to coordinates to form a flatness model, and when the flatness standard is known, an over-standard value exceeding the flatness standard can be directly obtained from the model, and a coordinate value at an over-standard position can also be directly obtained; when the coordinates of a particular point of interest are known, the height value at that particular location coordinate may also be obtained directly. Therefore, the quantitative management of the flatness of the wafer platform is realized, and further the quantitative management of the cleanliness of the wafer platform is realized. In addition, the processing process of the data is recorded into a macro, so that the data processing time is saved, and the data processing efficiency is improved.
Example two
Referring to fig. 5, the characterization method according to the first embodiment further includes the following steps:
step E: defining a flatness standard of the wafer platform, wherein values of the height values exceeding the flatness standard are specially displayed in the flatness model;
preferably, step E includes the steps of:
step E1: defining the lower limit value of the flatness standard of the wafer platform as A, and defining the upper limit value of the flatness standard of the wafer platform as a numerical value B, wherein the lower limit value A is less than or equal to the upper limit value B;
step E2: when any numerical value X in the height values is smaller than the lower limit value A, the height value X is specially displayed in the flatness model;
when any one of the height values Y is greater than the upper limit value B, the height value Y is displayed in the flatness model as a special display different from the height value X.
Preferably, the special display is displaying different colors.
The characterization method of the second embodiment is to optimize the flatness model established based on Excel in the first embodiment, and perform special display on the height value exceeding the standard range of the flatness of the wafer platform, for example, a cell in which the value higher than the standard upper limit is located is assigned with red color, and the value lower than the standard lower limit is assigned with blue color, so that an operator can intuitively determine an area exceeding the standard, and further, the operator can perform targeted cleaning or other measures, and the overall working efficiency is improved.
EXAMPLE III
Referring to fig. 6, the characterization method according to the first embodiment further includes the following steps:
step F: outputting the height value of a specific position in the flatness model;
optionally selecting a specific position in the flatness model, the modeling software outputting the height value corresponding to the specific position.
In the embodiment of the invention, the specific position coordinate can be selected according to past experience, and the flatness value at the specific position coordinate is directly output by recording the macro in Excel.
The third characterization method of the embodiment is to optimize the flatness model established based on Excel in the first embodiment, so that the positions focused on the wafer platform can be monitored in the production process conveniently, and the wafer platform can be cleaned in time when pollutants are found, thereby being more convenient for fine management, and effectively preventing the situation that a plurality of continuous wafers are polluted.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (9)
1. A method for characterizing the cleanliness of a wafer platform of a photoetching machine is characterized by comprising the following steps:
step A, making original data:
defining the flatness of the wafer platform as a basis for representing the cleanliness of the wafer platform;
scanning the wafer platform by using a scanning system of the photoetching machine, and generating a format file;
the format file records flatness data of the wafer platform as original data;
the flatness data comprises coordinate data and height values of the wafer platform, and each height value corresponds to specific coordinate data;
b, obtaining the original data:
finding the format file recorded with the flatness data in a data file of the photoetching machine, and exporting the format file;
step C, establishing a flatness model of the wafer platform by using modeling software:
importing the format file into the modeling software, and establishing the flatness model by the modeling software based on the flatness data;
and D, selecting a specific position in the flatness model optionally, and displaying the flatness data corresponding to the specific position in the flatness model.
2. The characterization method of claim 1, wherein the scanning system performs a scan once before loading the wafer and generates one copy of the format file for the scan frequency of the wafer stage in step a.
3. The characterization method of claim 1 wherein the format file in step a is a TXT file.
4. The characterization method according to claim 1, wherein the modeling software in step C is Excel software;
the step of establishing the flatness model by the Excel software based on the flatness data is as follows:
step C1, opening the format file by using the Excel software;
and step C2, sequentially assigning the height values in the format file to specific cells according to the position sequence.
5. The characterization method according to claim 4, wherein the process of establishing the flatness model by the Excel software is recorded as a macro;
and calling the macro when the flatness model is established.
6. The characterization method of claim 1, further comprising the steps of:
and E, defining a flatness standard of the wafer platform, wherein the numerical value exceeding the flatness standard in the height value is specially displayed in the flatness model.
7. The method of characterizing according to claim 6, wherein step E comprises the steps of:
step E1, defining the lower limit value of the flatness standard of the wafer platform as A, defining the upper limit value of the flatness standard of the wafer platform as a numerical value B, wherein the lower limit value A is less than or equal to the upper limit value B;
step E2, when any value X in the height values is smaller than the lower limit value A, the height value X is specially displayed in the flatness model;
when any one of the height values Y is greater than the upper limit value B, the height value Y is displayed in the flatness model as a special display different from the height value X.
8. The characterization method of claim 7 wherein the special display is displaying different colors.
9. The characterization method of claim 1, further comprising the steps of:
step F, outputting the height value of a specific position in the flatness model;
optionally selecting a specific position in the flatness model, the modeling software outputting the height value corresponding to the specific position.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001221631A (en) * | 2000-02-04 | 2001-08-17 | Nikon Corp | Planarity measuring apparatus |
| CN1667359A (en) * | 2005-03-04 | 2005-09-14 | 清华大学 | Self-calibrating method and apparatus for ultra precise workbench |
| CN101248330A (en) * | 2005-06-28 | 2008-08-20 | 斯甘拉伊斯股份有限公司 | A system and method for measuring and mapping a surface relative to a reference |
| CN103267507A (en) * | 2013-05-10 | 2013-08-28 | 西北工业大学 | Method for extracting flatness errors of mechanical structural plane based on finite element analysis |
| CN108050981A (en) * | 2017-12-28 | 2018-05-18 | 上海交通大学 | A kind of three coordinate measuring engine measurement method of complex part surface planarity measurement |
| CN110618585A (en) * | 2019-10-17 | 2019-12-27 | 上海华力集成电路制造有限公司 | Method for monitoring flatness of wafer transfer platform of photoetching machine |
-
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- 2021-03-15 CN CN202110273756.3A patent/CN113128023A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001221631A (en) * | 2000-02-04 | 2001-08-17 | Nikon Corp | Planarity measuring apparatus |
| CN1667359A (en) * | 2005-03-04 | 2005-09-14 | 清华大学 | Self-calibrating method and apparatus for ultra precise workbench |
| CN101248330A (en) * | 2005-06-28 | 2008-08-20 | 斯甘拉伊斯股份有限公司 | A system and method for measuring and mapping a surface relative to a reference |
| CN103267507A (en) * | 2013-05-10 | 2013-08-28 | 西北工业大学 | Method for extracting flatness errors of mechanical structural plane based on finite element analysis |
| CN108050981A (en) * | 2017-12-28 | 2018-05-18 | 上海交通大学 | A kind of three coordinate measuring engine measurement method of complex part surface planarity measurement |
| CN110618585A (en) * | 2019-10-17 | 2019-12-27 | 上海华力集成电路制造有限公司 | Method for monitoring flatness of wafer transfer platform of photoetching machine |
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