CN110515966B - Method for quickly establishing high-matching-degree scanning program between defect scanning machine stations - Google Patents
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Abstract
The invention provides a rapid establishment method of a high-matching-degree scanning program between defect scanning machines, which comprises the steps of providing a wafer; performing defect scanning on the wafer by adopting a standard scanning program; performing defect scanning on the wafer by adopting a test scanning program; matching the test scanning result with the standard scanning result; selecting a filtering parameter to filter the test scanning result according to the matching result; according to the filtered result, calculating the actual matching degree between the machine to be matched and the standard machine; judging whether the actual matching degree is larger than or equal to the preset matching degree, and if the actual matching degree is larger than or equal to the preset matching degree, adjusting the scanning program of the machine to be matched according to the filtering parameters; and if the actual matching degree is smaller than the preset matching degree, re-selecting the filtering parameters to filter the test scanning result. The invention can efficiently and quickly obtain the scanning program with high matching degree, thereby effectively releasing the capacity of the machine, saving time and reducing manpower consumption.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for quickly establishing a high-matching-degree scanning program between defect scanning machines.
Background
In recent years, as semiconductor integrated circuits are rapidly developed and critical dimensions are scaled down, the manufacturing process thereof becomes more complicated. Currently, advanced integrated circuit manufacturing processes generally comprise hundreds of process steps, wherein a problem in one step can cause defects of the whole semiconductor integrated circuit chip on a wafer, and serious defects of the whole chip can also cause failure of the whole chip, so that in the manufacturing process of the semiconductor integrated circuit, it is important to find out the problems in the product manufacturing process in time. Based on the above considerations, the industry generally controls the defect problem in the manufacturing process by defect detection to improve the product yield.
The wafer is generally scanned by a scanning machine under a certain scanning program, and the number of the scanned defects is compared with a control limit to judge whether the defects on the wafer exceed the control standard or not, and corresponding processing is performed in time.
The defect scanning mechanism mainly comprises the steps of making light/electrons incident on the surface of a wafer, collecting reflected/scattered light/electrons to obtain a gray level image, comparing adjacent units or standard units with the gray level image to obtain a gray level difference value, judging according to a set threshold value, and considering the defect as a defect when the threshold value is exceeded.
In the prior art, a plurality of defect scanning machine tables for improving the yield are arranged on each semiconductor production line, and correspond to different products, different production lines and even different process links respectively, and each defect scanning machine table is provided with a plurality of scanning programs and corresponds to defect scanning of a certain type of product and a certain layer of structure.
The scanning program is a basis for establishing a reasonable and efficient defect detection system, and plays a vital role in investigating, analyzing and feeding back defect conditions on a production line, which affect the yield of products. However, as the defect scanning machine is continuously updated and updated, the capturing capability and the fineness of the defect are higher and higher, so that certain difficulty is brought to the matching of scanning results among different machines.
The method adopted at present mainly establishes a scanning program according to experience summary and experience values, then collects defect data to compare among the machines, and if the difference exists, optimizes the scanning program until matching among the machines is achieved. The existing method has two problems: firstly, because of the upgrade of the machine, the definition of the threshold value is different, so that the threshold value of the original machine is difficult to set; secondly, as the reference is less, the matching degree is difficult to be in place in one step, and the matching degree needs to be optimized for multiple times, so that the manpower and time are wasted.
Disclosure of Invention
The invention aims to provide a rapid establishment method of a scanning program with high matching degree between defective scanning machines, which can efficiently and rapidly obtain the scanning program with high matching degree, thereby releasing the productivity of the machines, saving time and reducing manpower consumption.
In order to achieve the above-mentioned object, the present invention provides a method for rapidly establishing a high-matching-degree scanning program between defect scanning devices, comprising:
providing a wafer;
performing defect scanning on the wafer by adopting an established standard scanning program on a standard machine to obtain a standard scanning result;
performing defect scanning on the wafer by adopting a newly established test scanning program on a machine to be matched so as to obtain a test scanning result;
matching the test scanning result with the standard scanning result to obtain a matching result;
selecting a filtering parameter to filter the test scanning result according to the matching result so as to filter defects which are not matched with the standard scanning result;
according to the filtered result, calculating the actual matching degree between the machine to be matched and the standard machine; and
judging whether the actual matching degree is greater than or equal to the preset matching degree, and if the actual matching degree is greater than or equal to the preset matching degree, adjusting the test scanning program of the machine to be matched according to the filtering parameters so as to obtain a scanning program with high matching degree; and if the actual matching degree is smaller than the preset matching degree, re-selecting a filtering parameter to filter the test scanning result until the actual matching degree is larger than or equal to the preset matching degree.
Optionally, before performing defect scanning on the wafer, the method further includes:
and dividing the wafer according to the graph characteristics to form each scanning area, wherein different scanning areas correspond to different scanning parameters.
Optionally, the graphic features correspond to circuit patterns of different functional areas formed on the wafer for different operational functions.
Optionally, the functional area includes a LOGIC area, a FULL area, an SRAM area, and a PIXEL area.
Optionally, after the standard scan result is obtained, the method further includes:
and uploading the standard scanning result to a database, wherein the database stores the corresponding relation between the scanning result and the scanning program.
Optionally, before matching the test scan result with the standard scan result, the method further includes:
and reading the standard scanning result of the wafer from the database.
Optionally, the database further stores a corresponding relationship between the scanning structure layer and the scanning result.
Optionally, the preset matching degree is 80% -100%.
Optionally, before performing defect scanning on the wafer, the method further includes:
and aligning the wafer with the machine.
Optionally, the machine is aligned with the wafer by providing an alignment mark on the wafer.
Compared with the prior art, the rapid establishment method of the scanning program with high matching degree between the defect scanning machine stations has the following advantages: the invention provides a wafer, firstly, the established standard scanning program is adopted on a standard machine to carry out defect scanning on the wafer so as to obtain a standard scanning result; then, performing defect scanning on the wafer by adopting a newly established test scanning program on a machine to be matched so as to obtain a test scanning result; then matching the test scanning result with the standard scanning result to obtain a matching result; selecting a filtering parameter to filter the test scanning result according to the matching result so as to filter defects which are not matched with the standard scanning result; finally, according to the filtered result, calculating the actual matching degree between the machine to be matched and the standard machine, judging whether the actual matching degree is larger than or equal to the preset matching degree, and if the actual matching degree is larger than or equal to the preset matching degree, adjusting the test scanning program of the machine to be matched according to the filtering parameter, so as to obtain the high matching degree scanning program of the machine to be matched; and if the actual matching degree is smaller than the preset matching degree, re-selecting a filtering parameter to filter the test scanning result until the actual matching degree is larger than or equal to the preset matching degree, so that the rapid establishment of a high matching degree scanning program among the defect scanning machine stations can be completed. By adopting the method provided by the invention, the scanning program with high matching degree can be obtained efficiently and rapidly, thereby effectively releasing the capacity of the machine, saving time and reducing manpower consumption.
Drawings
FIG. 1 is a flowchart of a method for fast establishing a high-matching-degree scanning program between defect scanners according to an embodiment of the invention;
FIG. 2 is a specific example of a standard scan result in the present invention;
FIG. 3 is a diagram showing a specific example of the result of a test scan according to the present invention;
FIG. 4 is a specific example of the matching result between the test scan result and the standard scan result in the present invention;
FIG. 5 is a diagram showing a specific example of filtering the result of the swipe scan using the filtering parameters according to the invention.
Detailed Description
The following describes in further detail the method for quickly establishing a high-matching-degree scanning program between defect scanning machines according to the present invention with reference to fig. 1 to 5 and the detailed description. Advantages and features of the invention will become more apparent from the following description and from the claims. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for the purpose of facilitating and clearly aiding in the description of embodiments of the invention.
For a better understanding of the invention with objects, features and advantages, refer to the drawings. It should be understood that the structures, proportions, sizes, etc. shown in the drawings are for illustration purposes only and should not be construed as limiting the invention to the extent that any modifications, changes in the proportions, or adjustments of the sizes of structures, proportions, or otherwise, used in the practice of the invention, are included in the spirit and scope of the invention which is otherwise, without departing from the spirit or essential characteristics thereof.
The core idea of the invention is to provide a method for quickly establishing a scanning program with high matching degree between defective scanning machines, so as to efficiently and quickly obtain the scanning program with high matching degree, thereby releasing the productivity of the machines, saving time and reducing manpower consumption.
In order to achieve the above-mentioned idea, the present invention provides a method for quickly establishing a high-matching-degree scan program between defect scan tools, please refer to fig. 1, which schematically shows a flowchart of a method for quickly establishing a high-matching-degree scan program between defect scan tools according to an embodiment of the present invention, as shown in fig. 1, wherein the method for quickly establishing a high-matching-degree scan program between defect scan tools comprises the following steps:
step S100: a wafer is provided.
Step S200: and performing defect scanning on the wafer by adopting an established standard scanning program on a standard machine to obtain a standard scanning result.
Preferably, in this step, before performing defect scanning on the wafer, the method further includes: aligning the wafer with the standard machine. Specifically, an alignment mark can be arranged on the wafer, and a sensor is arranged at a corresponding part of the standard machine for alignment. Therefore, before defect scanning, the wafer is aligned with the standard machine, and the accuracy of a standard scanning result can be further improved.
Preferably, in this step, after the standard scan result is obtained, the method further includes:
and uploading the standard scanning result to a database, wherein the database stores the corresponding relation between the scanning result and the scanning program. Therefore, the standard scanning result can be stored by uploading the standard result to a database, so that a subsequent machine to be matched can acquire the standard scanning result, and further comparison of the subsequent standard scanning result and the test scanning result is facilitated. In addition, the corresponding relation between the scanning result and the scanning program is stored in the database, so that the scanning result of the standard scanning program can be conveniently read from the database later.
Optionally, the database further stores a corresponding relationship between the scanning structure layer and the scanning result.
Step S300: and performing defect scanning on the wafer by adopting a newly established test scanning program on the machine to be matched so as to obtain a test scanning result.
Preferably, in this step, before performing defect scanning on the wafer, the method further includes: and aligning the wafer with the machine to be matched. Specifically, an alignment mark can be set on the wafer, and a sensor is set at a corresponding position of the machine to be matched for alignment. Therefore, before the defect scanning, the wafer is aligned with the machine to be matched, so that the accuracy of the test scanning result can be further improved.
Preferably, the test scan program is established with reference to the standard scan program, and the total defect number maximum set by the test scan program is greater than the total defect number maximum set by the standard scan program.
Step S400: and matching the test scanning result with the standard scanning result to obtain a matching result.
Preferably, the standard scan results of the wafer may be read from a database.
Specifically, the test scan result and the standard scan result may be matched according to the coordinate position of the defect on the wafer in the test scan result and the coordinate position of the defect on the wafer in the standard scan result. Referring to fig. 2 to 4, fig. 2 schematically shows a specific example of the standard scan result in the present invention, fig. 3 schematically shows a specific example of the test scan result in the present invention, fig. 4 schematically shows a specific example of the matching result after matching the test scan result with the standard scan result, as shown in fig. 2, 25 defects are scanned in total by scanning the wafer with the standard scan program, wherein different gray scales represent different kinds of defects, as shown in fig. 3, 39 defects are scanned in total by scanning the wafer with the test scan program, as shown in fig. 4, and 25 defects in total are matched with 25 defects in the standard scan result. Preferably, as shown in fig. 4, when the test scan result is matched with the standard scan result, the defects in the test scan result are further classified according to the corresponding defect types of the defects in the standard scan result.
Step S500: and selecting a filtering parameter to filter the test scanning result according to the matching result so as to filter defects which are not matched with the standard scanning result.
In particular, the filtering parameters may include a direct threshold, and a magnitide (amplitude), energy, etc. characterizing the defect.
Referring to fig. 5, a specific example of filtering the test scan result by using the filtering parameters is schematically shown in fig. 5, where the defect type is defect class0, and the defect to be filtered is the defect to be filtered, so that the defect dividing area of the test scan result can be divided into 4 areas according to parameters such as amplitude and energy, as shown in fig. 5, and the defect in area 1 is set as the defect to be filtered.
Step S600: and calculating the actual matching degree between the machine to be matched and the standard machine according to the filtered result.
The actual matching degree can be the ratio of the total number of defects of the standard scanning result to the total number of defects of the filtered test scanning result; the actual matching degree can also be the ratio of the number of defects of each kind in the standard scanning result to the number of defects of the corresponding kind in the filtered test scanning result.
Step S700: and judging whether the actual matching degree is larger than or equal to the preset matching degree.
If the actual matching degree is greater than or equal to the preset matching degree, step S800 is executed.
Step S800: and adjusting the test scanning program of the machine to be matched according to the filtering parameters, so as to obtain a scanning program with high matching degree.
If the actual matching degree is smaller than the preset matching degree, returning to execute the steps S500-S700, i.e. re-selecting the filtering parameters to filter the test scan result, and executing the step S800 until the actual matching degree is greater than or equal to the preset matching degree.
Therefore, the invention provides a wafer, and the established standard scanning program is adopted on the standard machine to carry out defect scanning on the wafer so as to obtain the standard scanning result; then, performing defect scanning on the wafer by adopting a newly established test scanning program on a machine to be matched so as to obtain a test scanning result; then matching the test scanning result with the standard scanning result to obtain a matching result; selecting a filtering parameter to filter the test scanning result according to the matching result so as to filter defects which are not matched with the standard scanning result; finally, according to the filtered result, calculating the actual matching degree between the machine to be matched and the standard machine, judging whether the actual matching degree is larger than or equal to the preset matching degree, and if the actual matching degree is larger than or equal to the preset matching degree, adjusting the test scanning program of the machine to be matched according to the filtering parameter, so as to obtain the high matching degree scanning program of the machine to be matched; and if the actual matching degree is smaller than the preset matching degree, re-selecting a filtering parameter to filter the test scanning result until the actual matching degree is larger than or equal to the preset matching degree, so that the rapid establishment of a high matching degree scanning program among the defect scanning machine stations can be completed. By adopting the method provided by the invention, the scanning program with high matching degree can be obtained efficiently and rapidly, thereby effectively releasing the capacity of the machine, saving time and reducing manpower consumption.
Preferably, before performing step S200, the method further includes: and dividing the wafer according to the graph characteristics to form each scanning area, wherein different scanning areas correspond to different scanning parameters.
Therefore, the wafer is divided according to the graphic features to form each scanning area, and different scanning areas correspond to different scanning parameters, so that the accuracy and the comprehensiveness of defect detection can be improved.
Preferably, the pattern features correspond to circuit patterns of different functional areas formed on the wafer for different operation functions.
Optionally, the functional area includes a LOGIC area, a FULL area, an SRAM area, and a PIXEL area. The LOGIC area is an area for realizing LOGIC operation, the FULL area is an area for controlling the thickness of the center edge by chemical polishing, the SRAM (memory) area is a repeated structure for storing data, the PIXEL area is an area for realizing conversion of optical signals into point signals, and each functional area corresponds to each scanning area. Different areas will get different gray-scale images, for example, LOGIC area graphics are irregular and feedback images are brightest; the FULL (empty) area is a large empty area; the SRAM (memory) area is a densely repeated rectangular pattern, and the color is brighter; the PIXEL area is a densely repeating pattern, but darker in color than the SRAM area.
Correspondingly, the actual matching degree can also be the ratio of the defect number of each scanning area in the standard scanning result to the defect number of the corresponding scanning area in the filtered test scanning result.
Preferably, after the filtering parameter is used to filter the test scan result, the ratio of the total number of defects of the standard scan result to the total number of defects of the filtered test scan result may be calculated respectively according to the filtered result, the ratio of the number of defects of each kind in the standard scan result to the number of defects of the corresponding kind in the filtered test scan result and the ratio of the number of defects of each scanning area in the standard scan result to the number of defects of the corresponding scanning area in the filtered test scan result may be adjusted respectively, and whether these ratios are greater than or equal to the preset matching degree may be determined respectively, if these ratios are both greater than or equal to the preset matching degree, the actual matching degree is determined to be greater than or equal to the preset matching degree, and the filtering parameter is a final filtering parameter, so that the test scan program of the machine to be matched may be adjusted according to the filtering parameter, thereby obtaining the high matching degree scan program of the machine to be matched. Therefore, the matching degree between the defect scanning machine stations can be further improved through the arrangement.
In summary, the present invention provides a wafer, and the established standard scanning program is adopted to perform defect scanning on the wafer on the standard machine to obtain the standard scanning result; then, performing defect scanning on the wafer by adopting a newly established test scanning program on a machine to be matched so as to obtain a test scanning result; then matching the test scanning result with the standard scanning result to obtain a matching result; selecting a filtering parameter to filter the test scanning result according to the matching result so as to filter defects which are not matched with the standard scanning result; finally, according to the filtered result, calculating the actual matching degree between the machine to be matched and the standard machine, judging whether the actual matching degree is larger than or equal to the preset matching degree, and if the actual matching degree is larger than or equal to the preset matching degree, adjusting the test scanning program of the machine to be matched according to the filtering parameter, so as to obtain the high matching degree scanning program of the machine to be matched; and if the actual matching degree is smaller than the preset matching degree, re-selecting a filtering parameter to filter the test scanning result until the actual matching degree is larger than or equal to the preset matching degree, so that the rapid establishment of a high matching degree scanning program among the defect scanning machine stations can be completed. By adopting the method provided by the invention, the scanning program with high matching degree can be obtained efficiently and rapidly, thereby effectively releasing the capacity of the machine, saving time and reducing manpower consumption.
The above description is only illustrative of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, and any changes and modifications made by those skilled in the art in light of the above disclosure are intended to fall within the scope of the appended claims. It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (10)
1. The fast establishment method of the high-matching-degree scanning program between the defect scanning machine stations is characterized by comprising the following steps:
providing a wafer;
performing defect scanning on the wafer by adopting an established standard scanning program on a standard machine to obtain a standard scanning result;
performing defect scanning on the wafer by adopting a newly established test scanning program on a machine to be matched so as to obtain a test scanning result;
matching the test scanning result with the standard scanning result to obtain a matching result;
selecting a filtering parameter to filter the test scanning result according to the matching result so as to filter defects which are not matched with the standard scanning result;
according to the filtered result, calculating the actual matching degree between the machine to be matched and the standard machine; and
judging whether the actual matching degree is greater than or equal to a preset matching degree, and if the actual matching degree is greater than or equal to the preset matching degree, adjusting the test scanning program of the machine to be matched according to the filtering parameters so as to obtain a scanning program with high matching degree; and if the actual matching degree is smaller than the preset matching degree, re-selecting a filtering parameter to filter the test scanning result until the actual matching degree is larger than or equal to the preset matching degree.
2. The method of claim 1, further comprising, prior to performing the defect scan on the wafer:
and dividing the wafer according to the graph characteristics to form each scanning area, wherein different scanning areas correspond to different scanning parameters.
3. The method according to claim 2, wherein the pattern features correspond to circuit patterns of different functional areas formed on the wafer for realizing different operation functions.
4. The method for quickly creating a high-match scan program between defect scanners according to claim 3, wherein the functional areas include a LOGIC area, a FULL area, an SRAM area, and a PIXEL area.
5. The method for quickly establishing a high-matching-degree scanning program between defect scanners according to claim 1, wherein after obtaining the standard scanning result, the method further comprises:
and uploading the standard scanning result to a database, wherein the database stores the corresponding relation between the scanning result and the scanning program.
6. The method for quickly establishing a high-matching-degree scan program between defect scanners according to claim 5, wherein before matching the test scan result with the standard scan result, the method further comprises:
and reading the standard scanning result of the wafer from the database.
7. The method for quickly creating a high-matching-degree scanning program between defect scanners according to claim 5, wherein the database further stores a correspondence between a scanning structure layer and a scanning result.
8. The method for quickly establishing a high-matching-degree scanning program between defect scanning platforms according to claim 1, wherein the preset matching degree is 80% -100%.
9. The method of claim 1, further comprising, prior to performing the defect scan on the wafer:
and aligning the wafer with the machine.
10. The method of claim 9, wherein the wafer is aligned with the stage by providing alignment marks on the wafer.
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| US20120106827A1 (en) * | 2010-11-01 | 2012-05-03 | Samsung Electronics Co., Ltd. | Wafer inspection method |
| CN104332421A (en) * | 2014-09-01 | 2015-02-04 | 上海华力微电子有限公司 | Performance detection method of scanning machine |
| CN110010513A (en) * | 2019-03-04 | 2019-07-12 | 上海华力集成电路制造有限公司 | The method for building up and scanning machine of thin film deposition layer Defect Scanning formula |
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| US20120106827A1 (en) * | 2010-11-01 | 2012-05-03 | Samsung Electronics Co., Ltd. | Wafer inspection method |
| CN104332421A (en) * | 2014-09-01 | 2015-02-04 | 上海华力微电子有限公司 | Performance detection method of scanning machine |
| CN110010513A (en) * | 2019-03-04 | 2019-07-12 | 上海华力集成电路制造有限公司 | The method for building up and scanning machine of thin film deposition layer Defect Scanning formula |
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