CN113031359A

CN113031359A - COA type array substrate, measuring method thereof and liquid crystal display panel

Info

Publication number: CN113031359A
Application number: CN202110306326.7A
Authority: CN
Inventors: 彭备; 余思慧
Original assignee: HKC Co Ltd; Chuzhou HKC Optoelectronics Technology Co Ltd
Current assignee: HKC Co Ltd; Chuzhou HKC Optoelectronics Technology Co Ltd
Priority date: 2021-03-23
Filing date: 2021-03-23
Publication date: 2021-06-25
Anticipated expiration: 2041-03-23
Also published as: WO2022199192A1; CN113031359B

Abstract

The application provides a COA type array substrate and a measuring method thereof, and a liquid crystal display panel, and relates to the technical field of display, wherein the COA type array substrate comprises a substrate, and the COA type array substrate further comprises: the display device comprises a display area and a peripheral area surrounding the display area, wherein the peripheral area comprises a plurality of measuring areas; on the substrate, each measuring area comprises a plurality of auxiliary measuring pattern layers which are arranged in an array mode, and the middle of each auxiliary measuring pattern layer is provided with an auxiliary measuring through hole; along the thickness direction of the substrate base plate, one side of keeping away from the substrate base plate at the auxiliary measurement pattern layer, the measuring area still is provided with a plurality of color resistance units, and this COA type array substrate only sets up the auxiliary measurement pattern layer that the auxiliary measurement through-hole was seted up at the middle part through getting rid of thin film transistor layer, comes as the reference of measuring the color resistance unit to can improve the measurement accuracy through reducing the interference.

Description

COA type array substrate, measuring method thereof and liquid crystal display panel

Technical Field

The application relates to the technical field of display, in particular to a COA type array substrate, a measuring method of the COA type array substrate and a liquid crystal display panel.

Background

Most of the existing liquid crystal display devices in the market are backlight liquid crystal display devices, which include a liquid crystal display panel and a backlight module (backlight module). The lcd panel generally includes an array substrate (TFT), a color filter substrate (CF), a Liquid Crystal (LC) disposed between the array substrate and the color filter substrate, and a sealant.

Because the alignment between the color filter substrate and the array substrate is often poor due to such a structure, it is proposed in the prior art to arrange the color filter layer in the color filter substrate on the array substrate, and the formed array substrate is called a coa (color filter on array) type array substrate.

In order to meet the requirement standard of a customer, a display area in a COA type array substrate needs to be monitored, in the prior art, the display area is completely imitated, a thin film transistor layer and a color filter layer are prepared in a peripheral area surrounding the display area, but when measuring, data of the color filter layer cannot be accurately obtained due to interference of various structures of the thin film transistor layer, and therefore a new scheme capable of improving accuracy is urgently needed.

Disclosure of Invention

The embodiment of the application provides a COA type array substrate, a measuring method of the COA type array substrate and a liquid crystal display panel.

In order to achieve the purpose, the technical scheme is as follows:

in a first aspect, there is provided a COA type array substrate, including: the substrate base plate, COA type array substrate still includes: a display area and a peripheral area surrounding the display area, the peripheral area including a plurality of measurement areas; on the substrate, each measuring area comprises a plurality of auxiliary measuring pattern layers which are arranged in an array mode, and the middle of each auxiliary measuring pattern layer is provided with an auxiliary measuring through hole; in the thickness direction of the substrate base plate, a plurality of color resistance units are further arranged in the measuring area on one side, far away from the substrate base plate, of the auxiliary measuring pattern layer; on the plane where the substrate base plate is located, the projection center of the color resistance unit coincides with the projection center of the corresponding auxiliary measurement pattern layer and the projection center of the auxiliary measurement through hole in the auxiliary measurement pattern layer, and the projection size of the color resistance unit is larger than that of the auxiliary measurement through hole.

The COA type array substrate provided by the embodiment of the application only sets the auxiliary measurement pattern layer with the middle part provided with the auxiliary measurement through hole between the color resistance unit and the substrate as a reference object for measuring the physical characteristics of the color resistance unit by removing the thin film transistor layer in the measurement area, thereby reducing the interference of the thin film transistor layer on the color resistance unit and improving the measurement accuracy of the color resistance unit.

With reference to the first aspect, as a possible implementation manner, the color resistance unit is disposed on a side, away from the substrate, of the auxiliary measurement pattern layer located in the odd-numbered columns or the even-numbered columns; or the color resistance unit is arranged on one side, away from the substrate, of the auxiliary measurement pattern layer positioned in the odd-numbered row or the even-numbered row; or the color resistance units are arranged on one side, away from the substrate, of the auxiliary measurement pattern layer positioned in the odd-numbered columns of the odd-numbered rows and the even-numbered columns; or, the color resistance unit is arranged on one side, away from the substrate, of the auxiliary measurement pattern layer positioned in the odd-numbered rows and the even-numbered rows and the odd-numbered columns. In this implementation, since the density between the color resistance units is reduced, the mutual interference between the color resistance units is reduced, and the accuracy of detecting the opposite sides of the auxiliary measurement pattern layer extending in the column direction is improved.

With reference to the first aspect, as a possible implementation manner, the auxiliary measurement pattern layer includes a first auxiliary measurement pattern layer and a second auxiliary measurement pattern layer; the first auxiliary measurement pattern layer is provided with a color resistance unit on one side far away from the substrate base plate, and the second auxiliary measurement pattern layer is not provided with a color resistance unit on one side far away from the substrate base plate; in the row direction, the length of the first auxiliary measuring pattern layer is greater than or equal to that of the second auxiliary measuring pattern layer, and the length of the first auxiliary measuring pattern layer is greater than or equal to that of the color resistance unit; the length of the first auxiliary measuring pattern layer is larger than or equal to the length of the color resistance unit along the column direction. In the implementation mode, the size of the second auxiliary measurement pattern layer along the row direction is reduced, so that the size of the measurement area along the row direction is reduced, and the occupied area of the measurement area is saved. In addition, along the row direction, by enabling the length of the first auxiliary measurement pattern layer to be larger than or equal to the length of the color resistance units, the color resistance units laid on the two first auxiliary measurement pattern layers arranged along the row direction can be prevented from being overlapped with each other. In this implementation manner, along the column direction, by making the length of the first auxiliary measurement pattern layer greater than or equal to the length of the color resistance units, the color resistance units laid on two first auxiliary measurement pattern layers arranged along the column direction can be prevented from overlapping with each other.

With reference to the first aspect, as a possible implementation manner, each color resistance unit is further provided with two alignment through holes with the same structure; the two alignment through holes are located in the overlapping area of the color resistance unit and the corresponding auxiliary measurement pattern layer, and the two alignment through holes are respectively arranged on two opposite sides of the color resistance unit. In this implementation, the two alignment through holes play a role in alignment in addition to play a role in air outlet and buffering.

With reference to the first aspect, as a possible implementation manner, the central lines corresponding to the two alignment through holes respectively coincide with the central lines of the color resistance units. In this implementation, the offset of the color resistance unit can be estimated according to the offset of the alignment through hole.

With reference to the first aspect, as a possible implementation manner, the display area includes a plurality of sub-pixel areas arranged in an array; and on the plane where the substrate base plate is located, the projection size of the auxiliary measurement through hole is smaller than or equal to the projection size of the sub-pixel area. In this implementation, to avoid light leakage, the projected size of the auxiliary measurement via is less than or equal to the projected size of the sub-pixel region.

With reference to the first aspect, as a possible implementation manner, the plurality of auxiliary measurement pattern layers are integrally formed by the first metal layer.

With reference to the first aspect, as a possible implementation manner, the color resistance unit is one of a red color resistance unit, a green color resistance unit, and a blue color resistance unit.

In a second aspect, a measuring method of a COA type array substrate is provided, which is applied to a measuring apparatus, and includes: in a measurement area of a COA type array substrate according to any one of the first aspect and implementations of the first aspect, determining a position of an auxiliary measurement via; according to the position of the auxiliary measuring through hole, aiming at each edge of the auxiliary measuring through hole, determining a target edge which is parallel to the edge and is closest to the edge, and taking the target edge as the edge of the corresponding color resistance unit; and determining the length of the color resistance unit along the row direction and the length of the color resistance unit along the column direction according to the edge of the color resistance unit.

According to the measuring method of the COA type array substrate, the thin film transistor layer is removed from the measuring area of the COA type array substrate, and the auxiliary measuring pattern layer with the auxiliary measuring through hole formed in the middle is arranged between the color resistance unit and the substrate and serves as a reference for measuring the physical characteristics of the color resistance unit, so that the interference of the thin film transistor layer on the color resistance unit is eliminated, and the measuring accuracy of the color resistance unit can be improved.

With reference to the second aspect, as a possible implementation manner, the method further includes:

and determining the size of the alignment through hole on the color resistance unit along the row direction and the size of the alignment through hole on the color resistance unit along the column direction according to the position of the auxiliary measuring through hole.

In a third aspect, there is provided a measurement apparatus comprising: a processor;

the processor executes a computer program stored in the memory to implement the measurement method of the COA type array substrate according to any one implementation manner of the second aspect and the second aspect.

In a fourth aspect, a computer-readable storage medium is provided, comprising: the computer-readable storage medium stores a computer program that, when executed by a processor, implements the measuring method of the COA type array substrate according to any one of the second aspect and the second aspect.

In a fifth aspect, a liquid crystal display panel is provided, which includes the COA type array substrate and the opposite substrate according to any one implementation manner of the first aspect and the first aspect, and a liquid crystal layer disposed between the COA type array substrate and the opposite substrate.

A sixth aspect provides a liquid crystal display device, such as the liquid crystal display panel and the driving device for driving the liquid crystal display panel according to the first aspect.

According to the COA type array substrate and the measuring method thereof, the liquid crystal display panel and the liquid crystal display device, in the measuring area, the thin film transistor layer is removed, and only the auxiliary measuring pattern layer with the auxiliary measuring through hole formed in the middle is arranged between the color resistance unit and the substrate and serves as a reference for measuring the physical characteristics of the color resistance unit, so that the interference of the thin film transistor layer on the color resistance unit can be reduced, and the measuring accuracy of the color resistance unit is improved.

Drawings

Fig. 1 is a schematic structural view of a liquid crystal display device provided in the prior art;

fig. 2 is a schematic structural view of another liquid crystal display device provided in the prior art;

FIG. 3 is a schematic cross-sectional view of the COA type array substrate of FIG. 2;

FIG. 4 is a schematic top view of the COA type array substrate of FIG. 2;

FIG. 5 is a schematic view of a measurement area in a peripheral area;

fig. 6 is a schematic view of the structure in the region P in fig. 5;

FIG. 7 is a schematic cross-sectional view along AA' of FIG. 6;

FIG. 8 is a schematic cross-sectional view taken along direction BB' in FIG. 6;

FIG. 9 is a schematic structural diagram of a measurement region provided in an embodiment of the present application;

FIG. 10 is a schematic structural diagram of another measurement region provided in an embodiment of the present application;

FIG. 11 is a schematic structural diagram of another measurement region provided in an embodiment of the present application;

FIG. 12 is a schematic structural diagram of another measurement region provided in an embodiment of the present application;

FIG. 13 is a schematic cross-sectional view taken along direction CC' of FIG. 12;

FIG. 14 is a schematic structural diagram of another measurement region provided in an embodiment of the present application;

fig. 15 is a schematic flowchart of a measuring method of a COA type array substrate according to an embodiment of the present disclosure.

Reference numerals:

1-a frame; 2-cover plate; 3-a liquid crystal display module; 4-a backlight module; 5-a circuit board; 10-a display area; 110-sub-pixel area; 20-a peripheral zone; 21-a measurement zone; 30-a liquid crystal display panel; 31-an array substrate; 32-a counter substrate; 33-a liquid crystal layer; 34-an upper polarizing layer; 35-a lower polarizing layer; 310-substrate base plate; 320-a thin film transistor layer; 321-a grid; 322-gate insulating layer; 323-active layer; 324-source; 325-drain electrode; 326-a passivation layer; 327-data line; 328-scan line; 3201-a first metal layer; 3202-a second metal layer; 330-color filter layer; 3300-color resistance unit; 331-red color resistance unit; 332-green color resistance unit; 333-blue color resistance unit; 340-a transparent conductive layer; 400-auxiliary measurement pattern layer; 401 — a first auxiliary measurement pattern layer; 402-a second auxiliary layer pattern layer; 410-auxiliary measurement vias; 420-alignment through hole.

Detailed Description

In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.

Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by those skilled in the art. The terms "first," "second," and the like as used in the description and in the claims of the present application do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the embodiments of the present application, "a plurality" means two or more unless otherwise specified.

The directional terms "left", "right", "upper" and "lower" are defined with respect to the orientation in which the display assembly is schematically placed in the drawings, and it is to be understood that these directional terms are relative concepts, which are used for descriptive and clarifying purposes, and may be changed accordingly according to the change of the orientation in which the array substrate or the display device is placed.

The embodiment of the application provides a liquid crystal display device which can be various electronic equipment or can be applied to various electronic equipment.

For example, the electronic device may be a smartphone, a tablet computer, an electronic reader, a vehicle-mounted computer, a navigator, a digital camera, a smart television, a smart wearable device, and other electronic devices of various types. The liquid crystal display device provided by the embodiment of the application has very wide application prospect.

In the prior art, most of the liquid crystal display devices are backlight type liquid crystal display devices, and fig. 1 shows a schematic structural diagram of a backlight type liquid crystal display device. As shown in fig. 1, the main structure of the liquid crystal display device includes a frame 1, a cover plate 2, a liquid crystal display module 3, a backlight module 4, a circuit board 5, and other electronic components including a camera. The liquid crystal display module 3 includes a liquid crystal display panel 30, an upper polarizing layer 34 disposed on a side of the liquid crystal display panel 30 close to the cover plate 2, and a lower polarizing layer 35 disposed on a side of the liquid crystal display panel close to the backlight module. The liquid crystal display panel 30 includes an array substrate 31, an opposite substrate 32, and a liquid crystal layer 33 disposed between the array substrate 31 and the opposite substrate 32, wherein the array substrate 31 and the opposite substrate 32 are coupled together by a sealant (sealant), so as to define the liquid crystal layer 33 in a region surrounded by the sealant. The color filter layer 330 is usually disposed on the opposite substrate 32, and the opposite substrate 32 is referred to as a color filter substrate.

It should be understood that the color filter layer 330 is used to filter the white light emitted from the array substrate 31 into light of different colors. The color filter layer 330 generally includes three primary color resistance units arranged in an array, for example, the three primary color resistance units include a red color resistance unit, a green color resistance unit, and a blue color resistance unit. The red color resistance unit can filter the white light emitted from the array substrate 31 into red light, the green color resistance unit can filter the white light emitted from the array substrate 31 into green light, and the blue color resistance unit can filter the white light emitted from the array substrate 31 into blue light. Of course, the color filter layer 330 may further include other color resistance units, and the embodiment of the present application takes three primary color resistance units as an example for description.

As shown in fig. 1, taking the longitudinal section of the frame 1 as a U-shape as an example, the liquid crystal display module 3, the backlight module 4, the circuit board 5 and other electronic accessories including a camera and the like are disposed in the frame 1, the backlight module 4 is located below the liquid crystal display module 3, the circuit board 5 is located between the backlight module 4 and the frame 1, and the cover plate 2 is located on one side of the liquid crystal display module 3 away from the backlight module 4. The cover plate 2 may be, for example, transparent glass.

It should be understood that the display principle of the liquid crystal display device in fig. 1 is: the backlight module 4 emits white light, which is polarized in a specific polarization direction by the lower polarizing layer 35, and then enters the array substrate 31, and is adjusted by the liquid crystal layer 33, and then filtered by the color filter layer 330 on the color film substrate to form polarized light of three primary colors of red, green and blue. When the polarization direction of the polarized light of the three primary colors is perpendicular to the polarization direction of the upper polarizing layer 34, the polarized light of the three primary colors cannot pass through the upper polarizing layer 34, and no light exits at this time; when the polarization direction of the polarized light with three primary colors is parallel to the polarization direction of the upper polarizing layer 34, the polarized light with three primary colors can pass through the upper polarizing layer 34, and the intensity of the emergent light is strongest at this time. It should be understood that since the liquid crystal molecules have a polarization property to polarized light, the specific arrangement direction of the liquid crystal molecules can change the polarization direction of the polarized light passing through the liquid crystal layer, so that when the arrangement direction of the liquid crystal molecules is rotated under the control of the electric field applied by the pixel electrode and the common electrode, the polarized light of three primary colors can regularly transmit or not transmit through the upper polarizing layer 34, and finally a color image is formed.

Based on the liquid crystal display device shown in fig. 1, the propagation order of the optical path is: the backlight module 4 emits light through the lower polarizing layer 35, the array substrate 31, the liquid crystal layer 33, the color film substrate, the upper polarizing layer 34, and the emission cover plate 2 in sequence.

However, when the liquid crystal display panel 30 in the liquid crystal display device with such a structure is manufactured, the color film substrate and the array substrate 31 need to be prepared separately and then assembled into a box, so that the problem of poor alignment between the color film substrate and the array substrate 31 often occurs, and further the problems of light leakage of pixels or low aperture ratio are caused.

In order to solve the above problem, another liquid crystal display device has been proposed in the related art.

Fig. 2 shows a schematic structural diagram of another liquid crystal display device. As shown in fig. 2, in the liquid crystal display device, the liquid crystal display panel 30 prepares the color filter layer 330 on the array substrate 31. At this time, the array substrate 31 may be referred to as a COA type array substrate, and since there is no alignment problem when the COA type array substrate 31 and the opposite substrate 32 are aligned, difficulty of the alignment process in the process of manufacturing the liquid crystal display panel 30 can be reduced, and errors in aligning the cells can be avoided. Other structures are the same as those of the liquid crystal display device shown in fig. 1, and are not described herein again.

It should be understood that the display principle of the liquid crystal display device in fig. 2 is: the backlight module 4 emits white light, which passes through the lower polarizing layer to form white polarized light in a specific direction, and the white polarized light is incident into the COA type array substrate 31, filtered by the color filter layer 330 on the COA type array substrate to form polarized light of three primary colors of red, green and blue, and then adjusted by the liquid crystal layer 33 to regularly pass through or not pass through the upper polarizing layer 34, and finally a color image is formed.

Based on the structure of the liquid crystal display device shown in fig. 2, the propagation order of the optical paths is: the backlight module 4 emits light through the lower polarizing layer 34, the COA type array substrate 31, the liquid crystal layer 33, the opposite substrate 32, the upper polarizing layer 34, and the emission cover plate 2 in this order.

The structure and the display principle of the liquid crystal display device including the COA type array substrate 31 are described in detail above. The structure of the COA type array substrate 31 will be described in detail with reference to fig. 3 to 8.

Fig. 3 shows a schematic cross-sectional view of the COA type array substrate 31 in fig. 2. Fig. 4 shows a schematic top view of the COA type array substrate 31 in fig. 2.

As shown in fig. 3, the COA type array substrate 31 includes a base substrate 310, a Thin Film Transistor (TFT) layer 320, a color filter layer 330, and a transparent conductive layer 340, which are sequentially stacked. As shown in fig. 4, in a schematic top view, the COA type array substrate 31 includes a display area 10 and a peripheral area 20, and fig. 4 illustrates an example in which the peripheral area 20 surrounds the display area 10.

When the COA type array substrate 31 shown in fig. 3 is provided in the liquid crystal display device in fig. 2, the substrate 310 is close to the lower polarizing layer 35, and the transparent conductive layer 340 is close to the liquid crystal layer 33. That is, the substrate 310 is disposed on the lower polarizing layer 35, the thin film transistor layer 320 is disposed on the substrate 310, the color filter layer 330 is disposed on the thin film transistor layer 320, the transparent conductive layer 340 is disposed on the color filter layer 330, and then the liquid crystal layer 33 is formed on the transparent conductive layer 340.

It is to be understood that in the display region 10, the transparent conductive layer 340 generally includes a pixel electrode and a common electrode for driving liquid crystal in the liquid crystal layer 33 to rotate. The color filter layer 330 under the transparent conductive layer 340 is the same as the color filter layer 330 described in fig. 1, and is not described again here.

For displaying, the thin film transistor layer 320 located below the color filter layer 330 needs to control and adjust the driving voltage on the pixel electrode corresponding to the liquid crystal at different positions in the display area 10 to form different display brightness. Thus, as shown in fig. 4, thin-film-transistor layer 320 is typically provided with a plurality of scan lines 328 extending in a row direction (x direction as shown in fig. 4) and a plurality of data lines 327 extending in a column direction (y direction as shown in fig. 4) in display area 10. The x direction and the y direction are perpendicular to each other, and both the x direction and the y direction are parallel to the plane of the substrate base plate 310.

In addition, in display area 10, thin-film transistor layer 320 further includes a plurality of sub-pixel regions 110 defined by a plurality of scan lines 328 and a plurality of data lines 327 crossing each other, and each sub-pixel region 110 has a TFT. Each TFT includes a gate electrode, a gate insulating layer, an active layer, a source electrode, and a drain electrode in a thickness direction of the base substrate 310. Fig. 4 illustrates a plurality of rectangular sub-pixel regions 110 arranged in an array, in which case the sub-pixel regions 110 arranged in a row along the row direction are referred to as a row of sub-pixel regions 110, and the sub-pixel regions 110 arranged in a row along the column direction are referred to as a column of sub-pixel regions 110.

Based on this, for example, each scan line 328 is connected to the gate 321 of the TFTs in the sub-pixel region 110 in one row, each data line 327 is connected to the source of the TFTs in one column of the sub-pixel region 110, and the drain of each TFT is connected to the corresponding pixel electrode through the via holes distributed in the color filter layer, the scan line 328 can transmit a scan signal to the gate of the TFTs in the corresponding row of the sub-pixel region 110 to control the turning on or off of the TFTs in the corresponding row, and the data line 327 can transmit a data signal to the source of the TFT in the corresponding column of the sub-pixel region 110 when the TFT is turned on, so as to provide different driving voltages to the corresponding pixel electrode.

As shown in fig. 3 and 4, it should be understood that in the structure of the thin film transistor, the thin film transistor layer 320 generally includes a first metal layer 3201, a gate insulating layer 322, an active layer 323, a second metal layer 3202, and a passivation layer 326, which are sequentially stacked during the manufacturing process. The first metal layer 3201 is disposed on a side close to the substrate base plate 310, and the passivation layer 326 is disposed on a side close to the color filter layer 330. The first metal layer 3201 includes a plurality of scan lines 327 and a gate 321 for forming a TFT; the second metal layer 3202 includes a plurality of data lines 328 and source and drain

electrodes

324 and 325 for forming TFTs. Here, fig. 3 is only for illustrating the upper and lower positional relationship among the respective layers, and the laying shape of each layer is set as necessary.

As shown in fig. 4, the peripheral region 20 is used for wiring, and a scan driving circuit for providing scan signals to the scan lines 327 may be disposed in the peripheral region 20. In addition, in order to make the COA type array substrate 31 meet the requirement standard of the customer, after the color filter layer 330 is made and before the transparent conductive layer 340 is made, the optical characteristics (such as the color and brightness of the emitted light) and the physical characteristics (such as the corresponding size of the three-primary-color-resisting units in the color filter layer 330, the spacing between adjacent color-resisting units, etc.) of the COA type array substrate 31 need to be effectively monitored to prevent the occurrence of the abnormality.

In the prior art, in order to monitor the display area 10 in the COA type array substrate 31, during the manufacturing process, a plurality of measurement areas 21 are prepared in the peripheral area 20, completely following the design in the display area 10. That is, in each measurement area 21, the scanning line 327, the data line 328, the TFT, the color filter layer 330, and the like are prepared as one pattern in the display area 10.

Fig. 5 shows a schematic structural view of one measurement area 21 in the peripheral area 20.

As shown in fig. 5, in the measurement area 21, for example, according to the design of the display area 10, a plurality of scan lines 327 extending along the row direction x and a plurality of data lines 328 extending along the column direction y are disposed in the thin-film transistor layer 320, the plurality of scan lines 327 and the plurality of data lines 328 intersect with each other to define two rows and six columns of sub-pixel areas 110, and each sub-pixel area 110 has a TFT (not shown in fig. 5) distributed therein.

A corresponding color resistance unit 3300 is disposed on a side of the TFT in each sub-pixel region 110 away from the substrate 310, and the color resistance unit 3300 may be a red color resistance unit 331, a green color resistance unit 332, or a blue color resistance unit 333. The three-primary-color-resisting units 3300 are repeatedly arranged along the row direction, and the color-resisting units 3300 in the same column have the same color along the column direction. Along the thickness direction of the array substrate 31, the projection of the color resistance unit 3300 overlaps with the projection of the corresponding sub-pixel area.

On this basis, in general, to prevent light leakage, the color resistance unit 3300 laid over the thin film transistor layer 320 is designed as follows: taking the color-resisting units 3300 as rectangles as an example, the size of each color-resisting unit 3300 is larger than the size of the corresponding sub-pixel area 110, and the color-resisting unit 3300 is made to coincide with the projection center of the sub-pixel area 110, so that the color-resisting unit 3300 and the scanning line 327, the data line 328 and the TFT structure in the sub-pixel area 110 which cross to define the corresponding sub-pixel area 110 will all overlap.

At this time, when the physical characteristic measurement is performed in the measurement area 21, for example, when the existing device measures the length and width of one color resistance unit 3300, the edge of a plurality of color resistance units 3300 adjacent around the color resistance unit 3300 may interfere (for example, abnormal situations such as skew and overlapping may occur), the scanning lines 327 and the data lines 328 defining the corresponding sub-pixel area 110 in a crossing manner below the color resistance unit 3300 may interfere, or even the TFT structure may interfere, so that the measurement result determined by the device is usually not real data, and it may not be accurately determined whether the color filter layer is normal, thereby affecting the production yield.

Fig. 6 is a schematic view of the structure in the region P in fig. 5, fig. 7 is a schematic view of a cross section along the direction AA 'in fig. 6, and fig. 8 is a schematic view of a cross section along the direction BB' in fig. 6.

As shown in fig. 5 and 6, taking the color resistance unit 3300 as the first green color resistance unit G1 as an example, relative to the first green color resistance unit G1, a first red color resistance unit R1 is distributed on the left side of the first green color resistance unit G1, a first blue color resistance unit B1 is distributed on the right side of the first green color resistance unit G1, a second green color resistance unit G2 is distributed on the same row and the same column, and a third green color resistance unit G3 is distributed on the same row and the same column.

As shown in fig. 5, 6, 7 and 8, for example, when the apparatus measures the length of the first green color resistance unit G1 along the row direction x, it is necessary to acquire the positions of the edge G1 and the edge G1 'of the first green color resistance unit G1 extending along the column direction, and then determine the distance between the edge G1 and the edge G1', that is, the length of the first green color resistance unit G1 along the x direction. However, when the edge g1 is captured, the device may capture the edge of the first red color resistance unit R1 on the left side of g1, or two edges of the data line 327 corresponding to the left side of the sub-pixel region 110, or an edge corresponding to the gate of the TFT in the sub-pixel region 110. As shown in fig. 7, it is even possible to collect the edge of the passivation layer 326. Similarly, when the edge G1' is collected, the interference from multiple edges may also be caused, so that the actual edge of the first green color resistance unit G1 cannot be collected, and the length of the first green color resistance unit G1 in the row direction x cannot be accurately determined. Similarly, the length of the first green color resistance unit G1 along the column direction y cannot be accurately measured.

In addition, as shown in fig. 5 and 6, a through hole PAS is further provided in a region where each color resistance unit does not overlap with the corresponding sub-pixel region 110 (e.g., a region overlapping with a scan line), and the through hole PAS plays a role of air release and buffer. In the prior art, when measuring the length of the through hole PAS of G1 on the first green color resistance unit along the y direction, the measuring equipment is limited by the precision of the equipment, and is limited by the edge of the lower scanning line 328, the edge G1 of the first green color resistance unit G1, and the edge of the third green color resistance unit G3, and may even be limited by the interference of the active layer and the source/drain edge of the TFT, and the like, so that the length of the through hole PAS on the first green color resistance unit G1 along the y direction cannot be obtained. Further, since the actual shape of the through-hole PAS is generally irregular, not a perfect circle or a square, even if the length of the through-hole PAS in the y direction on the first green color resist unit G1 is acquired, the real situation of the through-hole PAS cannot be reflected.

Therefore, in the measurement area, a new structural design scheme is needed to solve the problem of inaccurate measurement and improve the measurement accuracy of the color filter layer.

In view of this, the present application provides a COA type array substrate, in a measurement area of the COA type array substrate, an auxiliary measurement pattern layer with an auxiliary measurement through hole formed in the middle is only disposed between a color resistance unit and a substrate by removing a thin film transistor layer, and is used as a reference for measuring physical characteristics of the color resistance unit, so that interference of the thin film transistor layer to the color resistance unit can be reduced, measurement accuracy of the color resistance unit is improved, and measurement accuracy of physical characteristics of a color filter layer is further improved.

The structure of the COA type array substrate provided in the embodiments of the present application will be described in detail with reference to fig. 9 to 14. Fig. 9 to 12 and 14 are schematic structural views of the measurement region 21 in the COA type array substrate according to the embodiment of the present application. Fig. 13 is a schematic cross-sectional view of the measurement region 21 shown in fig. 12 along the direction CC'.

The COA type array substrate provided by the embodiment of the present application includes a substrate 310.

Taking the structure shown in fig. 4 as an example, the COA type array substrate further includes a display region 10 and a peripheral region 20 surrounding the display region 10, and the peripheral region 20 includes a plurality of measurement regions 21.

Taking the display area 10 as a rectangle as an example, in conjunction with fig. 4, the measurement area 21 may be distributed on at least one of the left side, the right side, the upper side, or the lower side of the display area 10 with respect to the display area 10. A plurality of measuring regions 21 may be distributed on each side and the number of measuring regions 21 distributed on each side may be different, and the size and shape of each measuring region 21 may also be different, and for example, the shape of the measuring region 21 may be a square.

On the substrate base plate 310, each measurement region 21 further includes a plurality of auxiliary measurement pattern layers 400 arranged in an array, and an auxiliary measurement through hole 410 is formed in the middle of each auxiliary measurement pattern layer 400.

It should be understood that the plurality of auxiliary metrology pattern layers 400 arranged in an array are arranged in a plurality of rows and columns on the substrate base plate 310. The size and shape of the auxiliary measurement pattern layer 400 may be set and changed as needed, and the embodiment of the present application does not have any limitation thereto. The size and shape of the auxiliary measuring through hole 410 may be set and changed as needed, and the embodiment of the present application is not limited in any way.

In addition, since the auxiliary measurement via holes 410 need to be opened in the middle of each auxiliary measurement pattern layer 400, the projected size of the auxiliary measurement pattern layer 400 is larger than the projected size of the auxiliary measurement via holes 410 on the plane of the substrate base plate 310.

Alternatively, as a possible implementation, the plurality of auxiliary measurement pattern layers 400 are integrally formed of the first metal layer.

It should be understood that the plurality of auxiliary measurement pattern layers 400 may be formed using a first metal layer for forming the scan lines and the gate electrodes of the TFTs in the display region 10, wherein the first metal layer may be made of copper.

The measurement region 21 is further provided with a plurality of color resistance units 3300 on a side of the auxiliary measurement pattern layer 400 away from the base substrate 310 in the thickness direction of the base substrate 310.

As shown in fig. 13, an auxiliary measurement pattern layer 400 is laid on the base substrate 310 in the thickness direction of the base substrate 310, and a color resist unit 3300 is laid on the auxiliary measurement pattern layer 400.

Optionally, the color resistance unit is one of a red color resistance unit, a green color resistance unit, and a blue color resistance unit.

It should be understood that the red color resistance unit, the green color resistance unit, and the blue color resistance unit are laid on the side of the auxiliary measurement pattern layer 400 away from the substrate base plate 310 as needed, and the three primary color resistance units are completely identical to the size of the three primary color resistance units formed in the display area 10.

On the plane where the substrate 310 is located, the projection center of the color resistance unit 3300 coincides with the projection center of the corresponding auxiliary measurement pattern layer 400 and the projection center of the auxiliary measurement through hole in the auxiliary measurement pattern layer 400, and the projection size of the color resistance unit 3300 is larger than the projection size of the auxiliary measurement through hole.

Referring to fig. 9 to 13, taking the color resistance unit 3300, the auxiliary measurement pattern layer 400, and the auxiliary measurement via 410 as an example, when the auxiliary measurement pattern layer 400 has the auxiliary measurement via 410, and the projection centers of the auxiliary measurement pattern layer 400 and the auxiliary measurement via 410 are overlapped, the auxiliary measurement via 410 is located at the center of the auxiliary measurement pattern layer 400.

On this basis, when the projection center of the color resistance unit 3300 coincides with the projection center of the auxiliary measurement through hole 410, and the projection size of the color resistance unit 3300 is larger than the projection size of the auxiliary measurement through hole 410, the color resistance unit 3300 forms an overlapping area with the auxiliary measurement pattern layer 400 at four peripheries of the auxiliary measurement through hole 410, and the overlapping areas formed with the auxiliary measurement pattern layer 400 at two sides of the opposite sides of the auxiliary measurement through hole 410 should be the same size.

Thus, when measuring the size of the color resistance unit 3300, the measuring device may determine the positions of the four sides of the auxiliary measuring through hole 410, and then move from the center of the auxiliary measuring through hole 410 to the periphery, and respectively determine the sides closest to the edges of the auxiliary measuring through hole 410, that is, the four sides of the color resistance unit 3300. Compared with the prior art, the thin film transistor layer 320 laid between the color resistance unit 3300 and the substrate base plate 310 is eliminated, so that much interference is reduced, and the auxiliary measurement is carried out only by arranging the auxiliary measurement through hole 410, so that the accuracy rate of measuring the size of the color resistance unit can be improved.

The embodiment of the application provides a COA type array substrate, in the measuring area, through getting rid of thin film transistor layer, only set up the auxiliary measurement pattern layer that the auxiliary measurement through-hole was seted up at the middle part between color resistance unit and substrate base plate, come as the reference of measuring color resistance unit physical characteristic to can reduce thin film transistor layer to the interference of color resistance unit, improve the measurement accuracy of color resistance unit.

Optionally, as a possible implementation manner, on a side of the auxiliary measurement pattern layer 400 located at the odd columns or even columns away from the substrate base plate 310, a color resistance unit 3300 is disposed.

Alternatively, as another possible implementation, the color resistance unit 3300 is disposed on a side of the auxiliary measurement pattern layer located in the odd-numbered or even-numbered row away from the substrate base plate 310.

As shown in fig. 9 and 10, when the color resistance units 3300 are disposed only on the side of the odd-numbered auxiliary measurement pattern layers 400 away from the substrate 310, since the color resistance units 3300 are not disposed on the side of the even-numbered auxiliary measurement pattern layers 400 away from the substrate 310, a gap is formed between the auxiliary measurement pattern layers 400 of each two columns, thereby reducing the density of the color resistance units 3300 in the row direction, and then, compared to the prior art, reducing the mutual interference between the color resistance units 3300 and improving the accuracy of detecting the opposite sides of the auxiliary measurement pattern layers 400 extending in the column direction.

Similarly, the color-resisting units 3300 are disposed only on the odd columns, or only on the odd rows, or only on the side of the auxiliary measurement pattern layer 400 of the even rows away from the substrate board 310, so that the accuracy of detecting the physical characteristics of the color-resisting units 3300 can be improved accordingly.

Alternatively, as a possible implementation manner, color resistance units are disposed on the side of the auxiliary measurement pattern layer 400 located at the odd-numbered columns of the odd-numbered rows and the even-numbered columns away from the substrate base plate 310.

Alternatively, as another possible implementation manner, color resistance units are disposed on the side of the auxiliary measurement pattern layer 400 away from the substrate base plate 310, where the side is located at the even-numbered columns and the even-numbered columns.

As shown in fig. 11 and 12, when the color resistance units 3300 are disposed on the side of the auxiliary measurement pattern layer 400 of the odd-numbered row and even-numbered column away from the substrate board 310, since the color resistance units 3300 are not disposed on the side of the auxiliary measurement pattern layer 400 of the odd-numbered row and even-numbered row away from the substrate board 310, a certain gap is formed for each of the auxiliary measurement pattern layers 400 having the color resistance units 3300, and the color resistance units 3300 are not disposed on the side of the auxiliary measurement pattern layer 400 of the upper, lower, left, right, adjacent positions of the upper, lower, left, right edges of the auxiliary measurement pattern layer 400 away from the substrate board 310, thereby reducing the density of the color resistance units 3300 in both the row direction and the column direction, and then reducing the mutual interference between the color resistance units 3300 with respect to the related art, and improving the accuracy of detecting the physical characteristics of the color resistance units 3300.

Optionally, as a possible implementation manner, the auxiliary measuring pattern layer 400 includes a first auxiliary measuring pattern layer 401 and a second auxiliary measuring pattern layer 402.

The first auxiliary measurement pattern layer 401 is an auxiliary measurement pattern layer with a color resistance unit 3300 disposed on a side away from the substrate board 310, and the second auxiliary measurement pattern layer 402 is an auxiliary measurement pattern layer without a color resistance unit 3300 disposed on a side away from the substrate board 310.

In the row direction, the length of the first auxiliary measurement pattern layer 401 is greater than or equal to the length of the second auxiliary measurement pattern layer 402, and the length of the first auxiliary measurement pattern layer 401 is greater than or equal to the length of the color resistance unit 3300.

It should be understood that, since the color resistance unit 3300 is not disposed on the side of the second auxiliary measurement pattern layer 402 away from the substrate base plate 310, and the area of the second auxiliary measurement pattern layer does not affect the laying of the color resistance unit 3300, the length of the second auxiliary measurement pattern layer 402 along the row direction may be greater than, equal to, or less than the length of the color resistance unit 3300, and may be specifically disposed according to needs, which is not limited in this application.

Based on this, compared with the prior art, the dimension of the second auxiliary measurement pattern layer 402 along the row direction can be reduced, so that the dimension of the measurement region 21 along the row direction is reduced, and the area occupied by the measurement region 21 is saved.

It should be understood that, in order to avoid that the color resistance units 3300 laid on the side away from the substrate base plate 310 of the two first auxiliary measurement pattern layers 401 arranged in the row direction overlap with each other, thereby, the length of the first auxiliary measurement pattern layer 401 may be greater than or equal to the length of the color resistance unit 3300 in the row direction.

Alternatively, as shown in fig. 14, the length of the first auxiliary measurement pattern layer 401 is greater than or equal to the length of the color resistance unit 3300 in the column direction.

It should be understood that, in order to avoid overlapping of the color resist units 3300 laid on the side away from the substrate base plate 310 by the two first auxiliary measurement pattern layers 401 arranged in the column direction, the length of the first auxiliary measurement pattern layer 401 may be greater than or equal to the length of the color resist units 3300 in the column direction.

In addition, the length of the second auxiliary measurement pattern layer 402 is greater than or equal to the length of the color resistance unit 3300 in the column direction, and the length of the first auxiliary measurement pattern layer 401 and the length of the second auxiliary measurement pattern layer 402 may be equal to each other in order to facilitate integral formation using the first metal layer.

Optionally, as a possible implementation manner, two alignment through holes 420 with the same structure are further disposed on each color resistance unit 3300. The two alignment through holes 420 play a role in alignment besides play a role in venting and buffering.

The two alignment vias 420 are located in the overlapping region of the color resistor unit 3300 and the corresponding auxiliary measurement pattern layer 400, and the two alignment vias 420 are respectively disposed on two opposite sides of the color resistor unit 3300.

On the plane where the substrate base plate 310 is located, the projection shape of the alignment through hole 420 may be rectangular, square, circular, or the like, or may be other special-shaped structures, and may be specifically set as required. The size of the alignment through-hole 420 may also be set as desired.

It should be understood that, since the middle portion of the auxiliary measurement pattern layer 400 is provided with the auxiliary measurement through hole 410, the overlapping area formed by the color resistance unit 3300 and the corresponding auxiliary measurement pattern layer 400 is: the outer edge is the same as the edge of the color resistance unit 3300, and the inner edge is the same as the square frame area of the auxiliary measuring through hole 410.

For example, two alignment through holes 420 may be respectively disposed on two opposite sides of the color resistance unit 3300, taking the color resistance unit 3300 as a rectangle as an example, two alignment through holes 420 may be respectively disposed on two opposite sides of a short side of the color resistance unit 3300 (as shown in fig. 12), or may be respectively disposed on two opposite sides of a long side of the color resistance unit 3300.

Based on this, the two alignment through holes 420 are respectively disposed in the region overlapping with the auxiliary measurement pattern layer 400 outside the short side of the color resistance unit 3300, or the two alignment through holes are respectively disposed in the region overlapping with the auxiliary measurement pattern layer 400 outside the long side of the color resistance unit 3300, with respect to the auxiliary measurement through hole 410.

It should be understood that, since the distribution density of the color resistance units 3300 is reduced and the auxiliary measurement through holes 410 are provided as a reference for measurement, the measurement apparatus can measure the length of the alignment through holes 420 in the row direction x and the length of the alignment through holes 420 in the column direction y, and the measurement accuracy of the alignment through holes 420 can be improved relative to the prior art.

Optionally, as a possible implementation manner, the central lines corresponding to the two alignment through holes 420 coincide with the central lines of the color resistance units.

It should be understood that when two alignment vias 420 are disposed on opposite sides of a short side (extending along the row direction) of the color resistor 3300, the center lines of the two alignment vias 420 respectively extending along the column direction are coincident with the center lines of the color resistor 3300 extending along the column direction.

When the two alignment vias 420 can be disposed on two opposite sides of the long side (extending along the column direction) of the color resistance unit 3300, the central lines of the two alignment vias 420 extending along the row direction coincide with the central lines of the color resistance unit 3300 extending along the row direction.

It should be understood that, based on the position of the set alignment via 420, whether an abnormality occurs in the color resistance unit 3300 may be determined by referring to the position of the alignment via 420. For example, if two alignment vias 420 are found not to be at the predetermined positions during the detection process (assuming that the predetermined positions are at two opposite sides of the short side of the color resistor 3300 and the center of the alignment via 420 is on the center line of the color resistor 3300 along the column direction), the positions of the two alignment vias 420 are shifted from the predetermined positions, so that it can be determined that the color resistor 3300 with the alignment vias 420 is abnormal, and at this time, the shift amount of the color resistor 3300 can be estimated according to the shift amount of the alignment vias 420.

Optionally, as a possible implementation manner, the display area 10 includes a plurality of sub-pixel areas 110 arranged in an array, and on a plane where the substrate 310 is located, a projection size of the auxiliary measurement through hole 410 is smaller than or equal to a projection size of the sub-pixel area 110.

It should be understood that the auxiliary measurement via 410 is only used as a reference for measuring the color resistance unit 3300 and the alignment via 420 on the color resistance unit 3300, besides, in order to reduce the influence on the color resistance unit 3300 and the alignment via 420, and at the same time, in order to avoid light leakage, the projection size of the auxiliary measurement via 410 should be smaller than or equal to the projection size of the sub-pixel region 110.

The structure of the COA type array substrate provided in the embodiments of the present application is described above, and a method for measuring the COA type array substrate is described below based on the COA type array substrate. Fig. 15 is a schematic flowchart of a measuring method of a COA type array substrate according to an embodiment of the present disclosure.

As shown in fig. 15, the measurement method S100 includes the following S110 to S150.

S110, the measuring device determines the position of the auxiliary measuring through hole in the measuring region of the COA type array substrate provided in the embodiment of the present application.

And S120, determining a target edge which is parallel to the edge and is closest to the edge by the measuring equipment according to the position of the auxiliary measuring through hole and aiming at each edge of the auxiliary measuring through hole, and taking the target edge as the edge of the corresponding color resistance unit.

The center position of the auxiliary measurement through hole can be determined firstly so as to diffuse the center position of the auxiliary measurement through hole to the periphery, and then the target edge corresponding to each edge of the auxiliary measurement through hole is searched respectively.

And S130, determining the length of the color resistance unit along the row direction and the length of the color resistance unit along the column direction according to the edge of the color resistance unit by the measuring equipment.

Optionally, as a possible implementation manner, the method further includes:

the measuring equipment determines the size of the alignment through hole on the color resistance unit along the row direction and the size of the alignment through hole along the column direction according to the position of the auxiliary measuring through hole.

It should be understood that, because the interference of the thin film transistor layer on the measurement of the color resistance unit is eliminated, the measurement accuracy of the alignment through hole on the color resistance unit can be improved.

An embodiment of the present application further provides a measurement device, including: a processor;

the processor executes the computer program stored in the memory to implement the measurement method of the COA type array substrate according to the embodiment of the present application.

The beneficial effects of the measurement equipment provided by the embodiment of the application are the same as the beneficial effects of the measurement method of the COA type array substrate, and are not repeated here.

The embodiment of the present application further provides a computer-readable storage medium, in which a computer program is stored, and when the computer program is executed by a processor, the measuring method of the COA type array substrate provided in the embodiment of the present application is implemented.

The computer-readable storage medium provided in the embodiment of the present application has the same beneficial effects as the measurement method of the COA type array substrate, and is not described herein again.

The embodiment of the present application further provides a liquid crystal display panel, including: the liquid crystal display device includes a COA type array substrate and a counter substrate as described in the embodiments of the present application, and a liquid crystal layer disposed between the COA type array substrate and the counter substrate.

The liquid crystal display panel provided in the embodiment of the present application may further include other structures, which may specifically refer to the partial description of fig. 2.

The beneficial effects of the liquid crystal display panel provided by the embodiment of the application are the same as those of the COA type array substrate, and are not repeated herein.

An embodiment of the present application further provides a liquid crystal display device, including: the liquid crystal display panel and the driving device for driving the liquid crystal display panel as described in the embodiments of the present application.

The liquid crystal display device provided by the embodiment of the present application may further include other structures, and specifically, refer to the description of fig. 2 above.

The beneficial effects of the liquid crystal display device provided by the embodiment of the application are the same as those of the COA type array substrate, and are not repeated herein.

The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A COA type array substrate is characterized by comprising a substrate, and the COA type array substrate further comprises: a display area and a peripheral area surrounding the display area, the peripheral area including a plurality of measurement areas;

on the substrate, each measuring area comprises a plurality of auxiliary measuring pattern layers which are arranged in an array mode, and the middle of each auxiliary measuring pattern layer is provided with an auxiliary measuring through hole;

in the thickness direction of the substrate base plate, a plurality of color resistance units are further arranged in the measuring area on one side, far away from the substrate base plate, of the auxiliary measuring pattern layer;

on the plane where the substrate base plate is located, the projection center of the color resistance unit coincides with the projection center of the corresponding auxiliary measurement pattern layer and the projection center of the auxiliary measurement through hole in the auxiliary measurement pattern layer, and the projection size of the color resistance unit is larger than that of the auxiliary measurement through hole.

2. The COA type array substrate of claim 1,

the color resistance unit is arranged on one side, away from the substrate, of the auxiliary measurement pattern layer positioned in the odd columns or the even columns; or,

the color resistance unit is arranged on one side, away from the substrate, of the auxiliary measurement pattern layer positioned in the odd-numbered line or the even-numbered line; or,

the color resistance units are arranged on one sides, far away from the substrate, of the auxiliary measurement pattern layers positioned in odd-numbered columns and even-numbered columns; or,

and the color resistance units are arranged on one sides, far away from the substrate, of the auxiliary measurement pattern layers positioned in the odd-numbered rows and the even-numbered rows.

3. The COA type array substrate of claim 2, wherein the auxiliary measurement pattern layer comprises a first auxiliary measurement pattern layer and a second auxiliary measurement pattern layer;

the first auxiliary measurement pattern layer is provided with a color resistance unit on one side far away from the substrate base plate, and the second auxiliary measurement pattern layer is not provided with a color resistance unit on one side far away from the substrate base plate;

in the row direction, the length of the first auxiliary measuring pattern layer is greater than or equal to that of the second auxiliary measuring pattern layer, and the length of the first auxiliary measuring pattern layer is greater than or equal to that of the color resistance unit; the length of the first auxiliary measuring pattern layer is larger than or equal to the length of the color resistance unit along the column direction.

4. The COA type array substrate of claim 1 or 2, wherein each color resistance unit is further provided with two alignment through holes with the same structure;

the two alignment through holes are located in the overlapping area of the color resistance unit and the corresponding auxiliary measurement pattern layer, and the two alignment through holes are respectively arranged on two opposite sides of the color resistance unit.

5. The COA type array substrate of claim 4, wherein the center lines of the two alignment through holes coincide with the center lines of the color resistance units.

6. The COA type array substrate of claim 1 wherein the display area comprises a plurality of sub-pixel areas arranged in an array;

and on the plane where the substrate base plate is located, the projection size of the auxiliary measurement through hole is smaller than or equal to the projection size of the sub-pixel area.

7. A measuring method of a COA type array substrate is characterized by being applied to measuring equipment, and the method comprises the following steps:

determining the position of an auxiliary measurement via in a measurement area of a COA type array substrate according to any one of claims 1 to 6;

according to the position of the auxiliary measuring through hole, aiming at each edge of the auxiliary measuring through hole, determining a target edge which is parallel to the edge and is closest to the edge, and taking the target edge as the edge of the corresponding color resistance unit;

and determining the length of the color resistance unit along the row direction and the length of the color resistance unit along the column direction according to the edge of the color resistance unit.

8. The measurement method according to claim 7, characterized in that the method further comprises:

9. A computer-readable storage medium storing a computer program, wherein the computer program, when executed by a processor, implements the method of measuring a COA type array substrate according to any one of claims 7 to 8.

10. A liquid crystal display panel comprising the COA type array substrate according to any one of claims 1 to 7, a counter substrate, and a liquid crystal layer interposed between the COA type array substrate and the counter substrate.