TWI547918B - Panel device and detecting method thereof - Google Patents
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本發明是有關於一種面板裝置及其檢測方法，且特別是有關於一種由兩個基板組立而成的面板裝置及其檢測方法。 The present invention relates to a panel device and a method for detecting the same, and more particularly to a panel device formed by two substrates and a detecting method thereof.
隨著資訊技術與半導體製程能力的發展，市面上的各類產品在反應速率、處理效能、顯示品質等條件上都不斷提升使得製作良率與製作誤差受到相當嚴謹的要求。以顯示面板來說，顯示面板通常是由兩個或是兩個以上的基板組立而成，其供這基板上面製作有不同的構件。將兩個或多個基板組立在一起的過程中，若對位上的誤差過大，將使最終產品無法滿足市場的需求。因此，在組立多個基板時，需要有適當的方法與手段來檢測對位偏移是否超過可容忍的限度。另外，在基板上製作不同元件時，不同元件的製作過程不一定同步，因此也可能產生對位上的誤差，這類誤差也往往需要被要求在一定的程度之內以符合市場的需求。 With the development of information technology and semiconductor process capabilities, various types of products on the market have been continuously improved in terms of reaction rate, processing efficiency, display quality and other conditions, resulting in very stringent requirements for production yield and production error. In the case of a display panel, the display panel is usually formed by two or more substrates, which are provided with different members on the substrate. In the process of grouping two or more substrates together, if the error in the alignment is too large, the final product will not meet the market demand. Therefore, when assembling a plurality of substrates, it is necessary to have appropriate methods and means to detect whether the alignment offset exceeds a tolerable limit. In addition, when different components are fabricated on the substrate, the manufacturing process of the different components is not necessarily synchronized, so that errors in alignment may also occur, and such errors often need to be required to meet the needs of the market to a certain extent.
本發明提供一種面板裝置，提供量測結構以供正確檢測出對位偏移的程度。 The present invention provides a panel apparatus that provides a measurement structure for correctly detecting the degree of alignment offset.
本發明提供一種面板裝置的檢測方法，可以確實檢測出對位偏移是否超出容許範圍。 The present invention provides a method of detecting a panel device, which can surely detect whether the alignment offset is outside the allowable range.
本發明的面板裝置包括一第一基板、一第二基板、一第一量測結構以及一第二量測結構。第二基板與第一基板以面對面方式組立。第一量測結構配置於第一基板與第二基板其中一者上，並具有N個量測開口，其中N為正整數。第二量測結構配置於第一基板與第二基板其中一者上，並具有N個量測圖案。各量測圖案的面積對應地遮蔽住其中一個量測開口。在一選定量測方向上各量測圖案的寬度不小於對應的其中一個量測開口的寬度，其中第一量測結構與第二量測結構由不同膜層構成。 The panel device of the present invention includes a first substrate, a second substrate, a first measurement structure, and a second measurement structure. The second substrate and the first substrate are assembled in a face-to-face manner. The first measurement structure is disposed on one of the first substrate and the second substrate and has N measurement openings, where N is a positive integer. The second measuring structure is disposed on one of the first substrate and the second substrate and has N measurement patterns. The area of each measurement pattern correspondingly shields one of the measurement openings. The width of each measurement pattern in a selected measurement direction is not less than the width of one of the corresponding measurement openings, wherein the first measurement structure and the second measurement structure are composed of different film layers.
在本發明之一實施例中，上述第i個量測圖案的寬度為Xi，第i個量測開口的寬度Yi，Xi-Yi=Wi0。第j個量測圖案的寬度為Xj，第j個量測開口的寬度Yj，Xj-Yj=Wj0。i與j各自為1~N，i不等於j，且Wi不等於Wj。 In an embodiment of the invention, the width of the ith measurement pattern is Xi, and the width of the ith measurement opening is Yi, and Xi-Yi=Wi 0. The width of the jth measurement pattern is Xj, and the width of the jth measurement opening is Yj, Xj-Yj=Wj 0. i and j are each 1~N, i is not equal to j, and Wi is not equal to Wj.
在本發明之一實施例中，上述N個量測圖案的寬度不一致。 In an embodiment of the invention, the widths of the N measurement patterns are inconsistent.
在本發明之一實施例中，上述N個量測開口的寬度不一致。 In an embodiment of the invention, the widths of the N measurement openings are inconsistent.
在本發明之一實施例中，各量測圖案與對應的其中一個 量測開口具有相同形狀卻不同尺寸的輪廓。 In an embodiment of the invention, each measurement pattern and one of the corresponding ones The measurement openings have contours of the same shape but different sizes.
在本發明之一實施例中，上述輪廓為多邊形，且多邊形的至少一邊落在對應的量測圖案的面積內。 In an embodiment of the invention, the contour is a polygon, and at least one side of the polygon falls within an area of the corresponding measurement pattern.
在本發明之一實施例中，至少一個量測開口未被對應的量測圖案完全遮蔽而形成一間隙。 In an embodiment of the invention, the at least one measurement opening is not completely shielded by the corresponding measurement pattern to form a gap.
在本發明之一實施例中，第一量測結構與第二量測結構分別位於第一基板與第二基板上。 In an embodiment of the invention, the first measurement structure and the second measurement structure are respectively located on the first substrate and the second substrate.
在本發明之一實施例中，各量測圖案的寬度大於對應的其中一個量測開口的寬度而與第一量測結構重疊以形成一重疊面積。各量測圖案具有一標記。不同量測圖案構成的重疊面積彼此不同而且不同量測圖案的標記彼此不同。 In an embodiment of the invention, the width of each of the measurement patterns is greater than the width of the corresponding one of the measurement openings to overlap the first measurement structure to form an overlap area. Each measurement pattern has a mark. The overlapping areas formed by the different measurement patterns are different from each other and the marks of the different measurement patterns are different from each other.
本發明的一種面板裝置的檢測方法，包括判斷上述面板中置中是否有量測開口未被對應的量測圖案的面積完全遮蔽而形成一間隙，若是，則表示面板裝置存在一製程對位偏移。 A method for detecting a panel device according to the present invention includes determining whether a measurement opening in the panel is completely shielded from the area of the corresponding measurement pattern to form a gap, and if so, indicating that the panel device has a process alignment bias shift.
在本發明之一實施例中，第i個量測圖案的寬度為Xi，第i個量測開口的寬度Yi，Xi-Yi=Wi0，而第j個量測圖案的寬度為Xj，第j個量測開口的寬度Yj，Xj-Yj=Wj0，i與j各自為1~N，j不等於i，且Wj不等於Wi。第i個量測開口未被第i個量測圖案填滿，第j個量測開口被第j個量測圖案填滿，則第一基板與第二基板在選定量測方向上的製程對位偏移為(Wi)/2至(Wj)/2。 In an embodiment of the invention, the width of the i-th measurement pattern is Xi, and the width of the i-th measurement opening is Yi, and Xi-Yi=Wi 0, and the width of the jth measurement pattern is Xj, the width of the jth measurement opening Yj, Xj-Yj=Wj 0, i and j are each 1~N, j is not equal to i, and Wj is not equal to Wi. The i-th measurement opening is not filled by the ith measurement pattern, and the j-th measurement opening is filled by the j-th measurement pattern, and the process pair of the first substrate and the second substrate in the selected measurement direction The bit offset is (Wi)/2 to (Wj)/2.
在本發明之一實施例中，各量測圖案的寬度大於對應的其中一個量測開口的寬度而與第一量測結構重疊以形成一重疊面 積，而且不同量測圖案構成的該些重疊面積彼此。不同面板裝置的各量測圖案具有一標記，不同量測圖案的標記彼此不同。面板裝置的該檢測方法包括依據間隙所對應的量測圖案上的標記來判斷製程對位偏移的程度。 In an embodiment of the invention, the width of each measurement pattern is greater than the width of the corresponding one of the measurement openings to overlap the first measurement structure to form an overlapping surface. And the overlapping areas formed by different measurement patterns are mutually. Each of the measurement patterns of the different panel devices has a mark, and the marks of the different measurement patterns are different from each other. The detecting method of the panel device includes determining the degree of the process alignment offset according to the mark on the measurement pattern corresponding to the gap.
基於上述，本發明實施例的面板裝置中具有由不同膜層構成的第一量測結構與第二量測結構，其中第一量測結構的量測開口分別對應於第二量結構的量測圖案且各量測圖案的尺寸不小於對應的量測開口的尺寸。如此一來，第一量測結構與第二量測結構可以用來準確的判斷面板裝置是否存在製程對位偏移。 Based on the above, the panel device of the embodiment of the present invention has a first measurement structure and a second measurement structure composed of different film layers, wherein the measurement openings of the first measurement structure respectively correspond to the measurement of the second quantity structure. The pattern and the size of each measurement pattern are not smaller than the size of the corresponding measurement opening. In this way, the first measurement structure and the second measurement structure can be used to accurately determine whether the panel device has a process alignment offset.
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。 The above described features and advantages of the invention will be apparent from the following description.
100、100’、200、300、300’、400、800‧‧‧面板裝置 100, 100', 200, 300, 300', 400, 800‧‧‧ panel devices
110、210、310、410‧‧‧第一基板 110, 210, 310, 410‧‧‧ first substrate
120、220、320、420‧‧‧第二基板 120, 220, 320, 420‧‧‧ second substrate
130、230、330、430、530‧‧‧第一量測結構 130, 230, 330, 430, 530‧‧‧ first measurement structure
132、132i、132j、232、332、332i、332j、432、432i、432j、532‧‧‧量測開口 132, 132i, 132j, 232, 332, 332i, 332j, 432, 432i, 432j, 532‧‧
140、240、340、440、540‧‧‧第二量測結構 140, 240, 340, 440, 540‧‧‧ second measurement structure
142、142i、142j、242、242A、342、342i、342j、442、442i、442j、542‧‧‧量測圖案 142, 142i, 142j, 242, 242A, 342, 342i, 342j, 442, 442i, 442j, 542‧‧ ‧ measurement pattern
542A‧‧‧標記 542A‧‧‧ mark
810‧‧‧第一功能層 810‧‧‧ first functional layer
812‧‧‧遮光矩陣 812‧‧‧Lighting matrix
820‧‧‧第二功能層 820‧‧‧Second functional layer
822‧‧‧訊號屏蔽線 822‧‧‧ signal shielded cable
824、G、G1、G2‧‧‧間隙 824, G, G1, G2‧‧‧ gap
A‧‧‧重疊面積 A‧‧‧Overlapping area
Ai、Aj‧‧‧重疊寬度 Ai, Aj‧‧‧ overlap width
D1‧‧‧方向 D1‧‧ Direction
DL‧‧‧訊號線 DL‧‧‧ signal line
E‧‧‧區域 E‧‧‧ area
F1、F2、R‧‧‧距離 F1, F2, R‧‧‧ distance
I-I、II-II、III-III、IV-IV、V-V、VI-VI、VII-VII、VIII-VIII‧‧‧剖線 I-I, II-II, III-III, IV-IV, V-V, VI-VI, VII-VII, VIII-VIII‧‧‧
PE‧‧‧畫素電極 PE‧‧‧ pixel electrode
S1‧‧‧第一側 S1‧‧‧ first side
S2‧‧‧第二側 S2‧‧‧ second side
Xi、Xj、Yi、Yj‧‧‧寬度 Xi, Xj, Yi, Yj‧‧‧Width
圖1A為本發明一實施例的面板裝置的局部上視示意圖。 1A is a partial top plan view of a panel device according to an embodiment of the invention.
圖1B為圖1A的面板裝置沿剖線I-I的剖面示意圖。 1B is a cross-sectional view of the panel device of FIG. 1A taken along line I-I.
圖1C與圖1D表示在組立過程中發生製程誤差的面板裝置的示意圖。 1C and 1D show schematic views of panel devices in which process errors occur during assembly.
圖2A為本發明一實施例的面板裝置的其中一組檢測對的上視示意圖。 2A is a top plan view of a set of detection pairs of a panel device according to an embodiment of the invention.
圖2B為圖2A的剖線II-II的剖面示意圖。 2B is a schematic cross-sectional view taken along line II-II of FIG. 2A.
圖3A為圖2A的面板裝置存在對位偏移時其中一組檢測對的 上視示意圖。 3A is a set of detection pairs when the panel device of FIG. 2A has a registration offset The top view is schematic.
圖3B為圖3A的剖線III-III的剖面示意圖。 3B is a schematic cross-sectional view taken along line III-III of FIG. 3A.
圖4A為圖2A的面板裝置存在對位偏移時其中一組檢測對的上視示意圖。 4A is a top plan view showing one of the detection pairs when the panel device of FIG. 2A has a registration offset.
圖4B為圖4A的剖線IV-IV的剖面示意圖。 4B is a schematic cross-sectional view taken along line IV-IV of FIG. 4A.
圖5A為本發明另一實施例的面板裝置的局部上視示意圖。 FIG. 5A is a partial top plan view of a panel device according to another embodiment of the present invention.
圖5B為圖5A的剖線V-V的剖面示意圖。 Fig. 5B is a schematic cross-sectional view taken along line V-V of Fig. 5A.
圖5C為在製作過程中發生製程誤差的面板裝置的示意圖。 Fig. 5C is a schematic view of a panel device in which a process error occurs during fabrication.
圖5D為圖5C的剖線V-V的剖面示意圖。 Fig. 5D is a schematic cross-sectional view taken along line V-V of Fig. 5C.
圖6A為本發明一實施例的面板裝置的局部上視示意圖。 6A is a partial top plan view of a panel device according to an embodiment of the invention.
圖6B為圖6A的面板裝置沿剖線VI-VI的剖面示意圖。 6B is a cross-sectional view of the panel device of FIG. 6A taken along line VI-VI.
圖7A為本發明一實施例的面板裝置中第一量測結構與第二量測結構的上視示意圖。 7A is a top plan view of a first measurement structure and a second measurement structure in a panel device according to an embodiment of the invention.
圖7B為圖7A中區域E內的量測圖案542的局部放大示意圖。 FIG. 7B is a partially enlarged schematic view of the measurement pattern 542 in the area E of FIG. 7A.
圖8A為一實施例的面板裝置的第一基板的上視示意圖。 8A is a top plan view of a first substrate of a panel device of an embodiment.
圖8B為一實施例的面板裝置的第二基板的上視示意圖。 8B is a top plan view of a second substrate of the panel device of an embodiment.
圖8C為圖8A與圖8B的兩個基板組立成面板裝置之後，沿剖線VII-VII的剖面示意圖。 8C is a cross-sectional view taken along line VII-VII after the two substrate assemblies of FIGS. 8A and 8B are assembled into a panel device.
圖8D為圖8A與圖8B的兩個基板組立之後，沿剖線VIII-VIII的剖面示意圖。 8D is a schematic cross-sectional view taken along line VIII-VIII after the two substrates of FIGS. 8A and 8B are assembled.
圖1A為本發明一實施例的面板裝置的局部上視示意圖，而圖1B為圖1A的面板裝置沿剖線I-I的剖面示意圖。請同時參照圖1A與圖1B，面板裝置100包括第一基板110、第二基板120、第一量測結構130以及第二量測結構140。第二基板120與第一基板110以面對面方式組立，因此圖1A中以相同的矩形框表示第一基板110與第二基板120的輪廓。第一量測結構130配置於第一基板110上，並具有N個量測開口132，其中N為正整數。第二量測結構140配置於第二基板120上，並具有N個量測圖案142。由圖1A可知，各量測圖案142的面積對應地遮蔽住其中一個量測開口132。另外，第一量測結構130與第二量測結構140由於分別製作於第一基板110與第二基板120上，兩者由不同膜層構成。不過，在其他的實施例中，第一量測結構130與第二量測結構140可選擇同樣製作於第一基板110上或是同樣製作於第二基板120上，不過兩者仍由不同膜層構成。 1A is a partial top plan view of a panel device according to an embodiment of the present invention, and FIG. 1B is a cross-sectional view of the panel device of FIG. 1A taken along line I-I. Referring to FIG. 1A and FIG. 1B simultaneously, the panel device 100 includes a first substrate 110, a second substrate 120, a first measurement structure 130, and a second measurement structure 140. The second substrate 120 and the first substrate 110 are assembled in a face-to-face manner, and thus the outlines of the first substrate 110 and the second substrate 120 are indicated by the same rectangular frame in FIG. 1A. The first measurement structure 130 is disposed on the first substrate 110 and has N measurement openings 132, where N is a positive integer. The second measurement structure 140 is disposed on the second substrate 120 and has N measurement patterns 142. As can be seen from FIG. 1A, the area of each measurement pattern 142 correspondingly shields one of the measurement openings 132. In addition, the first measurement structure 130 and the second measurement structure 140 are respectively formed on the first substrate 110 and the second substrate 120, and the two are composed of different film layers. However, in other embodiments, the first measurement structure 130 and the second measurement structure 140 can be selectively fabricated on the first substrate 110 or the second substrate 120, but the two are still different films. Layer composition.
在本實施例中，量測開口132的數目與量測圖案142的數目相同，且量測開口132與量測圖案142一對一的對應而構成一個量測組。以圖1A與圖1B而言，上述N為5。另外，第i個量測圖案142i對應於第i個量測開口132i，並且第j個量測圖案142j對應於第j個量測開口132j，其中i與j各自為1~N，且i不等於j。同時，第一量測結構130與第二量測結構140都是由遮光材質製作，遮光材質例如為遮光樹脂、金屬、光阻或其組合。因此，每個量測開口132都可透光，且每個量測開口132的面積在 圖1A中都會被對應的一個量測圖案142遮蔽。 In the present embodiment, the number of measurement openings 132 is the same as the number of measurement patterns 142, and the measurement openings 132 correspond to the measurement patterns 142 one-to-one to form a measurement group. In the case of FIG. 1A and FIG. 1B, the above N is 5. In addition, the i-th measurement pattern 142i corresponds to the i-th measurement opening 132i, and the j-th measurement pattern 142j corresponds to the j-th measurement opening 132j, where i and j are each 1~N, and i does not Equal to j. At the same time, the first measurement structure 130 and the second measurement structure 140 are both made of a light-shielding material, such as a light-shielding resin, a metal, a photoresist or a combination thereof. Therefore, each measurement opening 132 is transparent, and the area of each measurement opening 132 is Both of FIG. 1A are shaded by a corresponding measurement pattern 142.
在一選定量測方向，例如平行於剖線I-I的方向D1上，各量測圖案142的寬度不小於對應的其中一個量測開口132的寬度。舉例而言，第i個量測圖案142i具有寬度Xi，第i個量測開口132i具有寬度Yi，且Xi-Yi=Wi0。同樣地，第j個量測圖案142j具有寬度Xj，第j個量測開口132j具有寬度Yj，且Xj-Yj=Wj0。另外，在本實施例中，所有的量測開口132具有相同的尺寸，不過量測圖案142分別具有不同尺寸。換言之，Xi等於Xj，而Yi不等於Yj，因此Wi不等於Wj。 In a selected measurement direction, such as direction D1 parallel to the line II, the width of each measurement pattern 142 is not less than the width of one of the corresponding measurement openings 132. For example, the i-th measurement pattern 142i has a width Xi, the i-th measurement opening 132i has a width Yi, and Xi-Yi=Wi 0. Similarly, the jth measurement pattern 142j has a width Xj, the jth measurement opening 132j has a width Yj, and Xj-Yj=Wj 0. In addition, in the present embodiment, all of the measurement openings 132 have the same size, but the measurement patterns 142 have different sizes, respectively. In other words, Xi is equal to Xj, and Yi is not equal to Yj, so Wi is not equal to Wj.
在圖1A中，各量測圖案142與對應的其中一個量測開口132具有相同形狀卻不同尺寸的輪廓。在圖1A與圖1B中，此輪廓為多邊形，且多邊形所有邊都落在對應的量測圖案142的面積內或者重疊於量測圖案142的輪廓。具體而言，量測圖案142i的位置與量測開口132i的位置彼此對準，因此量測圖案142i在其中一側重疊於第一量測結構130的重疊寬度Ai為(Wi)/2。同樣地，量測圖案142j的位置與量測開口132j的位置彼此對準，因此量測圖案142j在其中一側重疊於第一量測結構130的重疊寬度Aj為(Wj)/2。同時，各量測圖案142重疊於第一量測結構132的重疊面積或是重疊寬度也有所不同。這樣的設計可以用來檢測第一基板110與第二基板120組立過程中所發生的製程誤差的程度。 In FIG. 1A, each of the measurement patterns 142 has the same shape but a different size profile as the corresponding one of the measurement openings 132. In FIGS. 1A and 1B, the contour is a polygon, and all sides of the polygon fall within the area of the corresponding measurement pattern 142 or overlap the contour of the measurement pattern 142. Specifically, the position of the measurement pattern 142i and the position of the measurement opening 132i are aligned with each other, and thus the overlap width Ai of the measurement pattern 142i on one side of the first measurement structure 130 is (Wi)/2. Likewise, the position of the measurement pattern 142j and the position of the measurement opening 132j are aligned with each other, and thus the overlap width Aj of the measurement pattern 142j overlapping one side of the first measurement structure 130 on one side is (Wj)/2. At the same time, the overlap area or overlap width of each measurement pattern 142 overlapping the first measurement structure 132 is also different. Such a design can be used to detect the extent of process error that occurs during the assembly of the first substrate 110 and the second substrate 120.
舉例來說，圖1C與圖1D表示在組立過程中發生製程誤差的面板裝置的示意圖。圖1A與圖1B的面板裝置100如果在對 位過程中發生對位偏移，則可能構成圖1C與圖1D的結構。具體來說，圖1C與圖1D中，面板裝置100’具有的構件相同於面板裝置100的構件，不過構件之間的相對位置不同於面板裝置100。 For example, FIGS. 1C and 1D show schematic diagrams of panel devices in which process errors occur during assembly. The panel device 100 of FIG. 1A and FIG. 1B is in the right The alignment offset occurs during the bit process, which may constitute the structure of FIG. 1C and FIG. 1D. Specifically, in Fig. 1C and Fig. 1D, the panel device 100' has the same members as those of the panel device 100, but the relative positions between the members are different from those of the panel device 100.
在此，五個量測開口132的尺寸設計為相同，而五個量測圖案142的尺寸設計為彼此不同，其中若將這些量測開口132由第一側S1至第二側S2依序編號，則第一個量測圖案142的尺寸至第五個量測圖案142的尺寸設計為逐漸增加，且第一個量測圖案142的尺寸可以相同於一個量測開口132的尺寸。 Here, the five measurement openings 132 are sized to be the same, and the five measurement patterns 142 are sized differently from each other, wherein the measurement openings 132 are sequentially numbered from the first side S1 to the second side S2. The size of the first measurement pattern 142 to the size of the fifth measurement pattern 142 is designed to be gradually increased, and the size of the first measurement pattern 142 may be the same as the size of one measurement opening 132.
第一基板110與第二基板120在組立的過程中發生了平行於方向D1的對位偏移，將使得至少一個量測開口132未被對應的量測圖案142完全遮蔽而形成一間隙G。在本實施例中，第一個量測開口132與第二個量測開口132都未被對應的量測圖案142完全遮蔽，而分別定義出間隙G1與間隙G2，並且第三個至第五個量測開口132都完全被對應的量測圖案142所遮蔽。此時，多邊形的量測開口132的至少一個側邊將落在對應的量測圖案142的面積之外。 The alignment of the first substrate 110 and the second substrate 120 parallel to the direction D1 occurs during the assembly, so that the at least one measurement opening 132 is not completely shielded by the corresponding measurement pattern 142 to form a gap G. In this embodiment, the first measurement opening 132 and the second measurement opening 132 are not completely shielded by the corresponding measurement pattern 142, and the gap G1 and the gap G2 are respectively defined, and the third to fifth are respectively defined. Each of the measurement openings 132 is completely obscured by the corresponding measurement pattern 142. At this time, at least one side of the measurement opening 132 of the polygon will fall outside the area of the corresponding measurement pattern 142.
由圖1D可知，第二個量測圖案142i具有寬度Xi，第二個量測開口132i具有寬度Yi，且Xi-Yi=Wi0。同樣地，第三個量測圖案142j具有寬度Xj，第三個量測開口132j具有寬度Yj，且Xj-Yj=Wj0。第二個量測開口132i與對應的量測圖案142i之間形成有間隙G2，而第三個量測開口132j仍完全被對應的量測圖案134j遮蔽。因此，第一基板110與第二基板120在選定量測方向(即 方向D1)上的製程偏移應會落在(Wi)/2至(Wj)/2。 As can be seen from FIG. 1D, the second measurement pattern 142i has a width Xi, the second measurement opening 132i has a width Yi, and Xi-Yi=Wi 0. Similarly, the third measurement pattern 142j has a width Xj, the third measurement opening 132j has a width Yj, and Xj-Yj=Wj 0. A gap G2 is formed between the second measurement opening 132i and the corresponding measurement pattern 142i, and the third measurement opening 132j is still completely shielded by the corresponding measurement pattern 134j. Therefore, the process offset of the first substrate 110 and the second substrate 120 in the selected measurement direction (ie, the direction D1) should fall between (Wi)/2 and (Wj)/2.
具體來說，假設第一基板110與第二基板120精準地組立時，第一量測結構130與第二量測結構140預定要呈現圖1A與圖1B的相對位置。也就是說，在不發生製程誤差(對位偏移)時，量測圖案142i投影至第一基板110的輪廓的中心與對應的量測開口132i投影至第一基板110的輪廓的中心會彼此重合。在方向D1上發生的對位偏移時(如圖1C與1D)，對位偏移量超過(Wi)/2，則量測開口132i就不會完全地被量測圖案142i所遮蔽。同樣地，對位偏移量超過(Wj)/2，則量測開口132j就不會完全地被量測圖案142j所遮蔽。因此，由量測開口132i未完全地被量測圖案142i所遮蔽，而量測開口132j仍完全地被量測圖案142j所遮蔽的情形可知，第一基板110與第二基板120在方向D1上的製程偏移(對位偏移)應會落在(Wi)/2至(Wj)/2。 Specifically, assuming that the first substrate 110 and the second substrate 120 are accurately assembled, the first measurement structure 130 and the second measurement structure 140 are intended to exhibit the relative positions of FIGS. 1A and 1B. That is, when the process error (alignment offset) does not occur, the center of the contour of the measurement pattern 142i projected to the first substrate 110 and the center of the contour of the corresponding measurement opening 132i projected to the first substrate 110 may be mutually coincide. When the alignment offset occurs in the direction D1 (as shown in FIGS. 1C and 1D), the alignment offset exceeds (Wi)/2, and the measurement opening 132i is not completely obscured by the measurement pattern 142i. Similarly, if the registration offset exceeds (Wj)/2, the measurement opening 132j is not completely obscured by the measurement pattern 142j. Therefore, it is known that the measurement opening 132i is not completely covered by the measurement pattern 142i, and the measurement opening 132j is still completely covered by the measurement pattern 142j, the first substrate 110 and the second substrate 120 are in the direction D1. The process offset (alignment offset) should fall between (Wi)/2 and (Wj)/2.
本實施例的每個量測圖案142與對應的量測開口132的尺寸關係是已知的，因此可以由每個量測對的量測圖案142與量測開口132之間是否形成間隙G來判斷對位偏移量是否大於該已知量。另外，不同量測圖案142與對應的量測開口132的尺寸關係也是彼此不同的，因此可以藉由觀察間隙G的位置來判斷對位偏移量的程度。以圖1C與圖1D而言，將各個量測開口132與對應的量測圖案142定義為一量測對，則本實施例設置有第一量測對至第五量測對。在製作面板裝置100’時，可以先設定各量測對預定要表示的誤差量。例如，第一量測對設定為用以反應1微米 的誤差量，第二量測對設定為用以反應2微米的誤差量，第三量測對設定為用以反應3微米的誤差量，第四量測對設定為用以反應4微米的誤差量，而第五量測對設定為用以反應5微米的誤差量。面板裝置100'中，第三量測對的量測開口132i與量測圖案142i之間形成有間隙G，而第四量測對的量測開口132j仍被量測圖案142j完全遮蔽，因此可以判定出來面板裝置100’的對位偏移值落在3微米至4微米之間。如此一來，可以由組立完成的面板裝置100’輕易地判讀出對位偏移程度。當對位偏移程度大於可容受的規範時即可考慮進行修補或是報廢。上述數值僅是舉例說明如何由量測對判別出對位偏移程度，並無意圖表示量測圖案142與量測開口132的尺寸需要以此為限。 The dimensional relationship between each measurement pattern 142 of the present embodiment and the corresponding measurement opening 132 is known, so that a gap G can be formed between the measurement pattern 142 and the measurement opening 132 of each measurement pair. It is determined whether the registration offset is greater than the known amount. In addition, the dimensional relationship between the different measurement patterns 142 and the corresponding measurement openings 132 is also different from each other, and thus the degree of the alignment offset can be determined by observing the position of the gap G. In FIG. 1C and FIG. 1D , each measurement opening 132 and the corresponding measurement pattern 142 are defined as a measurement pair, and the embodiment is provided with a first measurement pair to a fifth measurement pair. When the panel device 100' is manufactured, it is possible to first set the amount of error that each measurement pair is intended to represent. For example, the first measurement pair is set to react 1 micron The error amount, the second measurement pair is set to reflect the error amount of 2 micrometers, the third measurement pair is set to reflect the error amount of 3 micrometers, and the fourth measurement pair is set to reflect the error of 4 micrometers. The amount, and the fifth measure pair is set to reflect the amount of error of 5 microns. In the panel device 100', a gap G is formed between the measurement opening 132i of the third measurement pair and the measurement pattern 142i, and the measurement opening 132j of the fourth measurement pair is still completely shielded by the measurement pattern 142j, so It is determined that the registration offset value of the panel device 100' falls between 3 micrometers and 4 micrometers. In this way, the degree of registration offset can be easily judged by the panel device 100' which is completed. When the offset of the alignment is greater than the acceptable specification, it can be considered for repair or scrap. The above numerical values are merely illustrative of how the degree of registration offset is discriminated by the measurement pair, and it is not intended to indicate the size of the measurement pattern 142 and the measurement opening 132.
在上述面板裝置100與面板裝置100’中，第一量測結構130與第二量測結構140可以藉由合適的製程來製作以形成所需要的輪廓，其中可形成預定輪廓的製程大致包括微影蝕刻製程、印刷製程等。一般來說，製作完成的結構的輪廓與尺寸不一定可以百分之百吻合於預定的設計，這將導致圖1C與圖1D所描述的量測對所判斷出有對位偏移發生時，實際的對位偏移程度與預先設定不符。一般來說，量測對判斷出有對位偏移發生時，若實際對位偏移程度小於預先設定，則可以提供較為嚴格的判斷標準。不過，量測對判斷出有對位偏移發生時，若實際對位偏移程度大於預先設定，則判斷標準將變得較為寬鬆而可能無法正確掌握產品是否符合規範。 In the above panel device 100 and panel device 100', the first measurement structure 130 and the second measurement structure 140 may be fabricated by a suitable process to form a desired profile, wherein the process for forming a predetermined profile substantially includes micro Shadow etching process, printing process, etc. In general, the contour and size of the fabricated structure may not be 100% consistent with the predetermined design, which will result in the actual pair when the alignment of the measurement pair described in FIG. 1C and FIG. 1D is determined to have a registration offset. The bit offset is not the same as the preset. In general, when the measurement determines that a registration offset occurs, if the actual alignment offset is less than the preset, a stricter criterion can be provided. However, when the measurement determines that there is a registration offset, if the actual alignment offset is greater than the preset, the judgment criteria will become more relaxed and may not correctly grasp whether the product conforms to the specification.
圖2A為本發明一實施例的面板裝置的其中一組檢測對的上視示意圖，而圖2B為圖2A的剖線II-II的剖面示意圖。請同時參照圖2A與圖2B，本實施例的面板裝置200中的檢測對包括配置於第一基板210與第二基板220之間的第一量測結構230與第二量測結構240，其中第一量測結構230配置於第一基板210上而第二量測結構240配置於第二基板220上。第一量測結構230具有量測開口232，而第二量測結構240包括量測圖案242。在本實施例中，量測圖案242預定要製作的尺寸應如虛線表示的量測圖案242A所示。由此可知，本實施例描述實際製作出來的尺寸較預定的尺寸小的態樣。 2A is a top view of a set of detection pairs of a panel device according to an embodiment of the present invention, and FIG. 2B is a cross-sectional view taken along line II-II of FIG. 2A. Referring to FIG. 2A and FIG. 2B simultaneously, the detection pair in the panel device 200 of the present embodiment includes a first measurement structure 230 and a second measurement structure 240 disposed between the first substrate 210 and the second substrate 220, wherein The first measurement structure 230 is disposed on the first substrate 210 and the second measurement structure 240 is disposed on the second substrate 220. The first metrology structure 230 has a measurement opening 232 and the second metrology structure 240 includes a metrology pattern 242. In the present embodiment, the measurement pattern 242 is intended to be made to have a size as shown by the measurement pattern 242A indicated by a broken line. From this, it can be seen that this embodiment describes an aspect in which the actually manufactured size is smaller than a predetermined size.
圖3A為圖2A的面板裝置存在對位偏移時其中一組檢測對的上視示意圖，而圖3B為圖3A的剖線III-III的剖面示意圖。由圖3A與圖3B可知，如果製程精度相當準確，第二量測結構240具有量測圖案242A。此時，第一基板210與第二基板220之間在方向D1上的對位偏移量超過距離F1之後，量測開口232與量測圖案242之間就會形成間隙。因此，檢測面板裝置200時，觀察到本組量測對中形成有間隙時，可以判斷為對位偏移的程度為大於距離F1。 FIG. 3A is a top view of a set of detection pairs when the panel device of FIG. 2A has a misalignment, and FIG. 3B is a cross-sectional view of the line III-III of FIG. 3A. As can be seen from FIG. 3A and FIG. 3B, if the process accuracy is quite accurate, the second measurement structure 240 has a measurement pattern 242A. At this time, after the alignment offset between the first substrate 210 and the second substrate 220 in the direction D1 exceeds the distance F1, a gap is formed between the measurement opening 232 and the measurement pattern 242. Therefore, when the panel device 200 is detected, when it is observed that a gap is formed in the measurement pair of the group, it can be determined that the degree of the registration offset is greater than the distance F1.
圖4A為圖2A的面板裝置存在對位偏移時其中一組檢測對的上視示意圖，而圖4B為圖4A的剖線IV-IV的剖面示意圖。由圖4A與圖4B可知，量測圖案242的實際尺寸小於預定要製作的量測圖案242A的尺寸。在這樣的情形下，第一基板210與第二 基板220之間在方向D1上的對位偏移量超過距離F2之後，量測開口232與量測圖案242A之間就會形成間隙。 4A is a top view of a set of detection pairs when the panel device of FIG. 2A has a misalignment, and FIG. 4B is a cross-sectional view of the line IV-IV of FIG. 4A. 4A and 4B, the actual size of the measurement pattern 242 is smaller than the size of the measurement pattern 242A to be produced. In such a case, the first substrate 210 and the second After the alignment offset between the substrates 220 in the direction D1 exceeds the distance F2, a gap is formed between the measurement opening 232 and the measurement pattern 242A.
由圖2B、圖3B與圖4B可知，距離F1大於距離F2。因此，當製作過程導致量測圖案242的尺寸小於預定設計的尺寸時，第一基板210與第二基板220組立時的對位偏移還不到距離F1，此量測對就可以被判別出來。也就是說，本實施例的量測對雖然預定是用來表示對位偏移到達距離F1的程度，但實際情形下，量測開口232與量測圖案242會反應出更小的誤差程度。如此一來，第一量測結構230與第二量測結構240的設計提供更嚴格的標準來判別出對位偏移的程度。換言之，如果判讀出對位偏移時，實際對位偏移量小於預先設定，則使得誤差程度被高估，這有助於確保產品的品質都在可容許的範圍內。因此，本實施例的量測對可以降低不良品通過檢測的機率。 2B, 3B and 4B, the distance F1 is greater than the distance F2. Therefore, when the manufacturing process causes the size of the measurement pattern 242 to be smaller than the size of the predetermined design, the alignment offset when the first substrate 210 and the second substrate 220 are assembled is less than the distance F1, and the measurement pair can be discriminated. . That is to say, although the measurement pair of the present embodiment is intended to indicate the extent to which the registration offset reaches the distance F1, in practice, the measurement opening 232 and the measurement pattern 242 may reflect a smaller degree of error. As such, the design of the first metrology structure 230 and the second metrology structure 240 provides a more stringent standard to determine the degree of alignment offset. In other words, if the actual registration offset is less than the preset when the alignment offset is read, the degree of error is overestimated, which helps to ensure that the quality of the product is within an allowable range. Therefore, the measurement pair of the embodiment can reduce the probability of the defective product passing the detection.
上述實施例將第一量測結構與第二量測結構分別製作於第一基板與第二基板上，不過本發明不以此為限。圖5A為本發明另一實施例的面板裝置的局部上視示意圖，而圖5B為圖5A的剖線V-V的剖面示意圖。請同時參照圖5A與圖5B，面板裝置300包括第一基板310、第二基板320、第一量測結構330以及第二量測結構340。第二基板320與第一基板310以面對面方式組立，因此圖5A中以相同的矩形框表示第一基板310與第二基板320的輪廓。第一量測結構330配置於第一基板310上，並具有N個量測開口332，其中N為正整數。第二量測結構配置340於第二基板 320上，並具有N個量測圖案342。由圖5A可知，各量測圖案342的面積對應地遮蔽住其中一個量測開口332而構成一個量測對。另外，第一量測結構330與第二量測結構340都製作於第二基板320上，且兩者由不同膜層構成。 In the above embodiment, the first measurement structure and the second measurement structure are respectively fabricated on the first substrate and the second substrate, but the invention is not limited thereto. 5A is a partial top plan view of a panel device according to another embodiment of the present invention, and FIG. 5B is a cross-sectional view taken along line V-V of FIG. 5A. Referring to FIG. 5A and FIG. 5B simultaneously, the panel device 300 includes a first substrate 310, a second substrate 320, a first measurement structure 330, and a second measurement structure 340. The second substrate 320 and the first substrate 310 are assembled in a face-to-face manner, and thus the outlines of the first substrate 310 and the second substrate 320 are indicated by the same rectangular frame in FIG. 5A. The first measurement structure 330 is disposed on the first substrate 310 and has N measurement openings 332, where N is a positive integer. The second measurement structure configuration 340 is on the second substrate 320, and has N measurement patterns 342. As can be seen from FIG. 5A, the area of each measurement pattern 342 correspondingly shields one of the measurement openings 332 to form a measurement pair. In addition, the first measurement structure 330 and the second measurement structure 340 are both formed on the second substrate 320, and the two are composed of different film layers.
具體而言，在一選定量測方向，例如平行於剖線V-V的方向D1上，各量測圖案342的寬度不小於對應的其中一個量測開口332的寬度。舉例而言，第i個量測圖案342i具有寬度Xi，第i個量測開口332i具有寬度Yi，且Xi-Yi=Wi0。同樣地，第j個量測圖案342j具有寬度Xj，第j個量測開口332j具有寬度Yj，且Xj-Yj=Wj0。另外，在本實施例中，所有的量測開口332具有相同的尺寸，不過量測圖案342分別具有不同尺寸。因此，由圖5B可知，Xi等於Xj，而Yi不等於Yj，因此Wi不等於Wj。另外，量測圖案342i的位置與量測開口332i的位置彼此對準，使得量測圖案342i在其中一側重疊於第一量測結構330的重疊寬度Ai為(Wi)/2。同樣地，量測圖案342j的位置與量測開口332j的位置彼此對準，使得量測圖案342j在其中一側重疊於第一量測結構330的重疊寬度Aj為(Wj)/2。 Specifically, the width of each of the measurement patterns 342 is not smaller than the width of the corresponding one of the measurement openings 332 in a selected measurement direction, for example, a direction D1 parallel to the line VV. For example, the i-th measurement pattern 342i has a width Xi, the i-th measurement opening 332i has a width Yi, and Xi-Yi=Wi 0. Similarly, the jth measurement pattern 342j has a width Xj, the jth measurement opening 332j has a width Yj, and Xj-Yj=Wj 0. In addition, in the present embodiment, all of the measurement openings 332 have the same size, but the measurement patterns 342 have different sizes, respectively. Therefore, as can be seen from FIG. 5B, Xi is equal to Xj, and Yi is not equal to Yj, so Wi is not equal to Wj. In addition, the position of the measurement pattern 342i and the position of the measurement opening 332i are aligned with each other such that the overlap width Ai of the measurement pattern 342i overlapping on the one side of the first measurement structure 330 is (Wi)/2. Likewise, the position of the measurement pattern 342j and the position of the measurement opening 332j are aligned with each other such that the overlap width Aj of the measurement pattern 342j overlapping one side of the first measurement structure 330 on one side is (Wj)/2.
圖5C為在製作過程中發生製程誤差的面板裝置的示意圖，而圖5D為圖5C的剖線V-V的剖面示意圖。請參照圖5C與圖5D，面板裝置300’為面板裝置300在製作過程中發生對位偏移後所具有的結構。在本實施例中，第一量測結構330與第二量測結構340由不同的膜層製作，因此在對位偏移之下，至少有一 個量測開口332將不會被對應的量測圖案342完全遮蔽。由圖5C與圖5D可知，圖面中最左側的兩個對位開口342未完全被遮蔽而與對應的對位圖案342之間形成有間隙G。 5C is a schematic view of a panel device in which a process error occurs during fabrication, and FIG. 5D is a cross-sectional view taken along line V-V of FIG. 5C. Referring to Fig. 5C and Fig. 5D, the panel device 300' has a structure in which the panel device 300 has a misalignment during the manufacturing process. In this embodiment, the first measurement structure 330 and the second measurement structure 340 are made of different film layers, so at least one of the alignment offsets The measurement openings 332 will not be completely obscured by the corresponding measurement pattern 342. As can be seen from FIG. 5C and FIG. 5D, the leftmost two alignment openings 342 in the drawing are not completely shielded and a gap G is formed between the corresponding alignment patterns 342.
在此，五個量測開口332的尺寸設計為相同，而五個量測圖案342的尺寸設計為彼此不同，其中若將這些量測開口132由第一側S1至第二側S2依序編號，則第一個量測圖案342的尺寸至第五個量測圖案342的尺寸設計為逐漸增加，且第一個量測圖案342的尺寸可以相同於一個量測開口332的尺寸。 Here, the five measurement openings 332 are sized to be the same, and the five measurement patterns 342 are sized differently from each other, wherein the measurement openings 132 are sequentially numbered from the first side S1 to the second side S2. The size of the first measurement pattern 342 to the size of the fifth measurement pattern 342 is designed to be gradually increased, and the size of the first measurement pattern 342 may be the same as the size of one measurement opening 332.
由圖5D可知，第二個量測開口332i與對應的量測圖案342i之間形成有間隙G，而第三個量測開口332j仍完全被對應的量測圖案334j遮蔽。因此，第一基板110與第二基板120在選定量測方向(即方向D1)上的製程偏移應會落在(Wi)/2至(Wj)/2。藉由間隙G的分布情形就可以判別出第一量測結構330與第二量測結構340在製程上的對位偏移的程度。 As can be seen from FIG. 5D, a gap G is formed between the second measurement opening 332i and the corresponding measurement pattern 342i, and the third measurement opening 332j is still completely obscured by the corresponding measurement pattern 334j. Therefore, the process offset of the first substrate 110 and the second substrate 120 in the selected measurement direction (ie, the direction D1) should fall between (Wi)/2 and (Wj)/2. The degree of the alignment offset of the first measurement structure 330 and the second measurement structure 340 on the process can be discriminated by the distribution of the gap G.
上述實施例皆以量測開口具有相同尺寸而量測圖案具有不同尺寸來說明，但本發明不以此為限。圖6A為本發明一實施例的面板裝置的局部上視示意圖，而圖6B為圖6A的面板裝置沿剖線VI-VI的剖面示意圖。請同時參照圖6A與圖6B，面板裝置400包括第一基板410、第二基板420、第一量測結構430以及第二量測結構440。第二基板420與第一基板410以面對面方式組立，因此圖6A中以相同的矩形框表示第一基板410與第二基板420的輪廓。第一量測結構430配置於第一基板410上，並具有N個量測 開口432，其中N為正整數。第二量測結構配置440於第二基板420上，並具有N個量測圖案442。由圖6A可知，各量測圖案442的面積對應地遮蔽住其中一個量測開口432。另外，第一量測結構430與第二量測結構440由於分別製作於第一基板410與第二基板420上。 The above embodiments are all described by measuring that the openings have the same size and the measurement patterns have different sizes, but the invention is not limited thereto. 6A is a partial top plan view of a panel device according to an embodiment of the present invention, and FIG. 6B is a cross-sectional view of the panel device of FIG. 6A taken along line VI-VI. Referring to FIG. 6A and FIG. 6B simultaneously, the panel device 400 includes a first substrate 410, a second substrate 420, a first measurement structure 430, and a second measurement structure 440. The second substrate 420 and the first substrate 410 are assembled in a face-to-face manner, and thus the outlines of the first substrate 410 and the second substrate 420 are represented by the same rectangular frame in FIG. 6A. The first measurement structure 430 is disposed on the first substrate 410 and has N measurements. Opening 432, where N is a positive integer. The second measurement structure configuration 440 is on the second substrate 420 and has N measurement patterns 442. As can be seen from FIG. 6A, the area of each measurement pattern 442 correspondingly shields one of the measurement openings 432. In addition, the first measurement structure 430 and the second measurement structure 440 are respectively fabricated on the first substrate 410 and the second substrate 420.
在本實施例中，量測開口432的數目與量測圖案442的數目相同，且量測開口432與量測圖案442一對一的對應而構成一個量測對。具體而言，本實施例不同於圖1A與圖1B的實施例之處在於，在本實施例中，所有的量測圖案442具有相同的尺寸，不過量測開口432分別具有不同尺寸。在一選定量測方向，例如方向D1上，各量測圖案442的寬度不小於對應的其中一個量測開口432的寬度。舉例而言，第i個量測圖案442i具有寬度Xi，第i個量測開口432i具有寬度Yi，且Xi-Yi=Wi0。同樣地，第j個量測圖案442j具有寬度Xj，第j個量測開口432j具有寬度Yj，且Xj-Yj=Wj0。以本實施例而言，寬度Xi相等於寬度Xj，而寬度Yi小於寬度Yj，所以Wi不等於Wj，但不以此為限。在其他實施例中，無須限定寬度Xi是否相等於寬度Xj，也無須限定寬度Yi是否等於寬度Yj。Wi不等於Wj時，不同量測組的量測開口432與量測圖案442就可以用來判斷製程誤差程度。在此，製程誤差程度的判斷可以參照前述實施例的說明，不另贅述。 In the present embodiment, the number of measurement openings 432 is the same as the number of measurement patterns 442, and the measurement openings 432 correspond to the measurement patterns 442 in a one-to-one correspondence to form a measurement pair. Specifically, the present embodiment is different from the embodiment of FIGS. 1A and 1B in that, in the present embodiment, all of the measurement patterns 442 have the same size, but the measurement openings 432 have different sizes, respectively. In a selected measurement direction, such as direction D1, the width of each measurement pattern 442 is not less than the width of one of the corresponding measurement openings 432. For example, the ith measurement pattern 442i has a width Xi, the ith measurement opening 432i has a width Yi, and Xi-Yi=Wi 0. Similarly, the jth measurement pattern 442j has a width Xj, the jth measurement opening 432j has a width Yj, and Xj-Yj=Wj 0. In the present embodiment, the width Xi is equal to the width Xj, and the width Yi is smaller than the width Yj, so Wi is not equal to Wj, but is not limited thereto. In other embodiments, it is not necessary to define whether the width Xi is equal to the width Xj, nor is it necessary to define whether the width Yi is equal to the width Yj. When Wi is not equal to Wj, the measurement opening 432 and the measurement pattern 442 of the different measurement groups can be used to determine the degree of process error. Here, the judgment of the degree of the process error can be referred to the description of the foregoing embodiment, and will not be further described.
圖7A為本發明一實施例的面板裝置中第一量測結構與第二量測結構的上視示意圖，而圖7B為圖7A中區域E內的量測 圖案542的局部放大示意圖。請參照圖7，第一量測結構530具有多個量測開口532，而第二量測結構540包括多個量測圖案542。各個量測開口532與對應的量測圖案542的相對關係與尺寸設計可以參照前述實施例的說明，此處不另贅述。也就是說，量測開口532與量測圖案542的尺寸與位置關係可以相同於量測開口132與量測圖案142、相同於量測開口232與量測圖案242、相同於量測開口332與量測圖案342或是相同於量測開口432與量測圖案442。 7A is a top plan view of a first measurement structure and a second measurement structure in a panel device according to an embodiment of the present invention, and FIG. 7B is a measurement in a region E in FIG. 7A. A partially enlarged schematic view of the pattern 542. Referring to FIG. 7 , the first measurement structure 530 has a plurality of measurement openings 532 , and the second measurement structure 540 includes a plurality of measurement patterns 542 . For the relative relationship and size design of each measurement opening 532 and the corresponding measurement pattern 542, reference may be made to the description of the foregoing embodiment, and details are not described herein. That is, the size and positional relationship of the measurement opening 532 and the measurement pattern 542 may be the same as the measurement opening 132 and the measurement pattern 142, the same as the measurement opening 232 and the measurement pattern 242, and the same as the measurement opening 332. The measurement pattern 342 is the same as the measurement opening 432 and the measurement pattern 442.
在本實施例中，每個量測圖案542具有標記542A，其中標記542A可以是文字、數字、符號或其組合。標記542A可以藉由在各量測圖案542中形成開口或是薄化區所定義出來。另外，由圖7可知，各量測圖案542的寬度等於或是大於對應的其中一個量測開口532的寬度。因此，各量測圖案542與第一量測結構530由上視圖(圖7)所觀看到的面積會重疊以形成一重疊面積A。同時，量測圖案542的尺寸彼此不同，使得不同量測圖案542構成的重疊面積A彼此不同。在此，不同量測圖案542上的標記542A彼此不同。 In the present embodiment, each measurement pattern 542 has a mark 542A, where the mark 542A can be a word, a number, a symbol, or a combination thereof. The mark 542A can be defined by forming an opening or a thinned area in each of the measurement patterns 542. In addition, as can be seen from FIG. 7, the width of each measurement pattern 542 is equal to or greater than the width of one of the corresponding measurement openings 532. Therefore, the area of each of the measurement patterns 542 and the first measurement structure 530 viewed by the top view (FIG. 7) may overlap to form an overlap area A. At the same time, the sizes of the measurement patterns 542 are different from each other such that the overlapping areas A formed by the different measurement patterns 542 are different from each other. Here, the marks 542A on the different measurement patterns 542 are different from each other.
具體而言，本實施例的標記542A為數字0~4，其中這些不同標記542A用來表示不同的對位偏移程度。舉例而言，本實施例的設計中，標記542A為0的量測圖案542具有與對應的量測開口532相同的面積。同時，標記542A為1~3的量測圖案542具有比對應的量測開口532更大的面積，且標記542A的數字越大則對 應的量測圖案542的尺寸越大。因此，進行檢測時，只要觀察哪一個標記542A所對應的量測圖案542旁存在間隙，就可知道對位偏移程度。 Specifically, the mark 542A of the present embodiment is a number 0 to 4, wherein these different marks 542A are used to indicate different degrees of alignment offset. For example, in the design of the present embodiment, the measurement pattern 542 having the mark 542A of 0 has the same area as the corresponding measurement opening 532. Meanwhile, the measurement pattern 542 having the mark 542A of 1 to 3 has a larger area than the corresponding measurement opening 532, and the larger the number of the mark 542A is The size of the measurement pattern 542 should be larger. Therefore, when detecting, it is possible to know the degree of the registration offset by observing which gap is present next to the measurement pattern 542 corresponding to the mark 542A.
舉例而言，標記542A為0的量測圖案542與對應的量測開口532之間形成有間隙時，表示對位偏移的量值大於0。進行檢測作業時，如果設定誤差容許範圍需要小於標記542A為3的量測圖案540所反應的誤差程度，則標記542為2的量測圖案542與對應的量測開口532之間形成有間隙，而標記542為3的量測圖案542與對應的量測開口532之間沒有間隙時，可以讓這產品通過檢測。另外，標記542為3的量測圖案542與對應的量測開口532之間形成有間隙則這個產品無法通過檢測。上述的標記542A的設置可以應用前述每一個實施例的量測結構當中，以助於快速判讀檢測結果。 For example, when a gap is formed between the measurement pattern 542 having the mark 542A of 0 and the corresponding measurement opening 532, the magnitude of the registration offset is greater than zero. When the detection operation is performed, if the set error tolerance range needs to be smaller than the error degree reflected by the measurement pattern 540 having the mark 542A being 3, a gap is formed between the measurement pattern 542 having the mark 542 of 2 and the corresponding measurement opening 532. When there is no gap between the measurement pattern 542 having the mark 542 of 3 and the corresponding measurement opening 532, the product can be passed through the detection. In addition, if a gap is formed between the measurement pattern 542 having the mark 542 of 3 and the corresponding measurement opening 532, the product cannot pass the detection. The above-described setting of the mark 542A can be applied to the measurement structure of each of the foregoing embodiments to facilitate quick interpretation of the detection result.
圖8A為一實施例的面板裝置的第一基板的上視示意圖，而圖8B為一實施例的面板裝置的第二基板的上視示意圖。請同時參照圖8A與圖8B，第一基板110上製作有第一功能層810與第一量測結構130而第二基板120上製作有第二功能層820與第二量測結構140。圖8C為圖8A與圖8B的基板組立成面板裝置之後，沿剖線VII-VII的剖面示意圖，而圖8D為圖8A與圖8B的基板組立之後，沿剖線VIII-VIII的剖面示意圖。由圖8C與圖8D可知，第一基板110與第二基板120組立可構成面板裝置800，其中第一功能層810與第一量測結構130為相同膜層，而第二功能 層820的至少一構件與第二量測結構140為相同膜層。以應用於顯示面板為例，第一功能層810可以是彩色濾光層中的遮光矩陣，而第二功能層820可以是主動元件陣列，但不以此為限。 8A is a top plan view of a first substrate of a panel device according to an embodiment, and FIG. 8B is a top view of a second substrate of the panel device of the embodiment. Referring to FIG. 8A and FIG. 8B , a first functional layer 810 and a first measurement structure 130 are formed on the first substrate 110 , and a second functional layer 820 and a second measurement structure 140 are formed on the second substrate 120 . 8C is a cross-sectional view taken along line VII-VII of the substrate assembly of FIGS. 8A and 8B, and FIG. 8D is a cross-sectional view taken along line VIII-VIII after the substrate of FIGS. 8A and 8B is assembled. As shown in FIG. 8C and FIG. 8D, the first substrate 110 and the second substrate 120 may be assembled to form the panel device 800, wherein the first functional layer 810 and the first measurement structure 130 are the same film layer, and the second function. At least one component of layer 820 is the same film layer as second measurement structure 140. For example, the first functional layer 810 may be a light shielding matrix in a color filter layer, and the second functional layer 820 may be an active device array, but not limited thereto.
當面板裝置800為顯示面板時，第二基板120上設置的第二功能層820例如包括畫素電極PE、訊號線DL以及訊號屏蔽線822，但不以此為限，其中第二功能層820還可以包括有掃描線、主動元件、儲存電容結構等未直接繪示於圖中的構件。在此，相鄰兩個畫素電極PE之間的區域無法正常進行顯示，而需要以遮光矩陣812以及訊號屏蔽線822遮蔽住。一般來說，遮光矩陣812的尺寸至少需要遮蔽住相鄰兩條訊號屏蔽線822之間的間隙824。因此，遮光矩陣812的寬度通常設定為不小於間隙824的寬度以避免漏光情形發生。以本實施例而言，遮光矩陣812的寬度超出間隙824的寬度一距離R以確保間隙824被完全遮蔽。 When the panel device 800 is a display panel, the second functional layer 820 disposed on the second substrate 120 includes, for example, a pixel electrode PE, a signal line DL, and a signal shielding line 822, but not limited thereto, wherein the second functional layer 820 Components that are not directly depicted in the figures, such as scan lines, active components, storage capacitor structures, etc., may also be included. Here, the area between the adjacent two pixel electrodes PE cannot be normally displayed, but needs to be shielded by the light shielding matrix 812 and the signal shielding line 822. In general, the size of the shading matrix 812 needs to cover at least the gap 824 between adjacent two signal shielding lines 822. Therefore, the width of the shading matrix 812 is typically set to be no less than the width of the gap 824 to avoid light leakage situations. In the present embodiment, the width of the shading matrix 812 exceeds the width of the gap 824 by a distance R to ensure that the gap 824 is completely obscured.
第一基板110與第二基板120在組立的過程當中可能發生對位偏移，這使得距離R縮減，甚至讓間隙824暴露出來。一但間隙824暴露出來，則漏光情形就會發生，這使顯示面板的品質不良。因此，面板裝置800設置有圖8D中的第一量測結構130與第二量測結構140，特別是，第二量測結構140與第二功能層820的訊號屏蔽線822相同膜層製作，以有效率的檢測出組立對位偏移的程度是否超出可容許的範圍。第一量測結構130與第二量測結構140用來判斷對位偏移程度的方法可以參照前述實施例的說明。另外，圖8A至圖8D中的第一量測結構130與第二量測結 構140可以由前述實施例中任何一者的第一與第二量測結構來取代。 The alignment of the first substrate 110 and the second substrate 120 during the assembly process may occur, which causes the distance R to be reduced, even exposing the gap 824. Once the gap 824 is exposed, light leakage will occur, which may result in poor quality of the display panel. Therefore, the panel device 800 is provided with the first measurement structure 130 and the second measurement structure 140 in FIG. 8D. In particular, the second measurement structure 140 is formed by the same film layer as the signal shielding line 822 of the second functional layer 820. It is effective to detect whether the degree of the alignment offset is out of the allowable range. The method for determining the degree of alignment offset by the first measurement structure 130 and the second measurement structure 140 can be referred to the description of the foregoing embodiment. In addition, the first measurement structure 130 and the second measurement node in FIGS. 8A to 8D The structure 140 can be replaced by the first and second measurement structures of any of the preceding embodiments.
在本實施例中，製作第二功能層820的過程中如果訊號屏蔽線822的寬度小於預定設計的尺寸，則距離R會縮小，這使得面板裝置800可容許的對位偏移程度也會對應的縮小。此時，根據圖2A、2B、3A、3B、4A、4B的相關描述，第二量測結構240的尺寸也會隨著縮小而讓量測圖案242在對位偏移程度小於預先設定的程度時就反應出有對位偏移發生，這有助於正確的判斷對位偏移程度是否超過可容許範圍。 In this embodiment, if the width of the signal shielding line 822 is smaller than the predetermined design size during the process of fabricating the second functional layer 820, the distance R may be reduced, which makes the degree of alignment offset that the panel device 800 can tolerate. The reduction. At this time, according to the related description of FIGS. 2A, 2B, 3A, 3B, 4A, 4B, the size of the second measurement structure 240 also decreases, and the degree of deviation of the measurement pattern 242 is less than a predetermined degree. It is reflected that a registration offset occurs, which helps to correctly determine whether the offset of the alignment exceeds the allowable range.
綜上所述，本發明在面板裝置中將不同膜層構成的量測結構設計為具有不同重疊面積(或是重疊寬度)。當組立兩個基板時或是製作兩個不同圖案的膜層時，量測結構之間形成間隙可以反應出對位偏移的發生。另外，量測結構可以構成多個量測組，不同量測組設計為反應不同的對位偏移程度。因此，檢測時只要辨別出間隙所存在的量測組為何，就可以有效率的得知對位偏移程度是否超出可容許範圍。在至少一實施例中，單一膜層圖案化之後的構件尺寸小於預定設計時，量測組所反應的對位偏移程度也隨之縮小，因此可以較為忠實的反應出實際對位偏移的情形。 In summary, the present invention designs a measuring structure composed of different film layers in the panel device to have different overlapping areas (or overlapping widths). When two substrates are assembled or two different patterns of the film are formed, a gap is formed between the measurement structures to reflect the occurrence of the alignment offset. In addition, the measurement structure can constitute a plurality of measurement groups, and the different measurement groups are designed to reflect different alignment offset degrees. Therefore, as long as the measurement group in which the gap exists is detected during the detection, it is possible to efficiently know whether the degree of the registration offset exceeds the allowable range. In at least one embodiment, when the size of the component after patterning of the single film layer is smaller than the predetermined design, the degree of alignment offset of the measurement group is also reduced, so that the actual alignment offset can be faithfully reflected. situation.
100‧‧‧面板裝置 100‧‧‧ Panel device
110‧‧‧第一基板 110‧‧‧First substrate
120‧‧‧第二基板 120‧‧‧second substrate
130‧‧‧第一量測結構 130‧‧‧First measurement structure
132‧‧‧量測開口 132‧‧‧Measurement opening
142‧‧‧量測圖案 142‧‧‧Measurement pattern
D1‧‧‧方向 D1‧‧ Direction
I-I‧‧‧剖線 I-I‧‧‧ cut line
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| CN105206601B (en) | 2015-10-19 | 2019-03-12 | 京东方科技集团股份有限公司 | Test element unit, array substrate, display panel, display device and the method for manufacturing test element unit |
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