CN112928483B - Broadband metamaterial wave absorber based on gap trapezoid structure - Google Patents

Broadband metamaterial wave absorber based on gap trapezoid structure Download PDF

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CN112928483B
CN112928483B CN202110077504.3A CN202110077504A CN112928483B CN 112928483 B CN112928483 B CN 112928483B CN 202110077504 A CN202110077504 A CN 202110077504A CN 112928483 B CN112928483 B CN 112928483B
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dielectric substrate
metal
wave absorber
patch
trapezoid
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CN112928483A (en
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任武
胡瑞欣
李伟明
薛正辉
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Beijing Institute of Technology BIT
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/14—Reflecting surfaces; Equivalent structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems

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Abstract

The invention discloses a broadband metamaterial wave absorber based on a gap trapezoid structure, which adopts a metal-medium-metal sandwich structure and comprises a metal reflecting plate, two medium substrates, a metal pattern layer and a chip resistor. The two dielectric substrates are mutually bonded to form a dielectric layer of the metamaterial wave absorber, the metal reflecting plate covers the lower surface of the dielectric layer, the metal pattern layer covers the upper surface of the dielectric layer, and the patch resistor is welded on the metal pattern layer; the metal pattern of the metamaterial wave absorber unit is of a 4-isosceles trapezoid structure with the center being symmetrical, the lower bottom of the trapezoid is close to and parallel to the medium boundary of the unit, the slit is formed along the trapezoidal symmetrical axis and penetrates through the upper bottom and the lower bottom of the trapezoid, and the metamaterial wave absorber unit has the advantages of being simple in structure, insensitive in polarization direction, insensitive in incident angle, ultrathin and wide in wave absorbing frequency band.

Description

Broadband metamaterial wave absorber based on gap trapezoid structure
Technical Field
The invention relates to the technical field of metamaterial wave absorbers, in particular to a broadband metamaterial wave absorber based on a gap trapezoid structure.
Background
With the rapid development of electronic technology and communication industry, various advanced reconnaissance systems and precise attack systems appear successively, and in the face of increasingly intense electronic information countermeasure and complex modern war environments, the requirements of various electronic platforms on stealth are higher and higher, and stealth technology is concerned more and more. The stealth material refers to a stealth technology for absorbing and detecting electromagnetic waves by using a wave-absorbing material, and is the most important stealth approach at present. The electromagnetic metamaterial becomes a hotspot of research in the field of wave-absorbing materials due to the singular and adjustable electromagnetic effect of the electromagnetic metamaterial.
The electromagnetic metamaterial refers to an artificial material which is designed according to the electromagnetic theory and has certain electric response or magnetic response, is formed by arranging and combining sub-wavelength structural units in a periodic or regular non-periodic mode, and can present 'specific' properties which do not exist in the nature. After the development of the last two decades, from the early application research of the original left-handed material, the perfect lens, the invisible cloak and the like to the new concepts of the phase gradient super surface, the codable super material and the like which are currently attracting attention, the super material is not only a novel material form, but also represents a brand new material design concept. In the early research of the metamaterial, the high loss generated by the resonant structure brings great problems to the potential application of the metamaterial, and the metamaterial becomes the advantage of the wave absorber. Landy et al first proposed a perfect metamaterial wave absorber using the electromagnetic coupling characteristics of a metamaterial in 2008, and simulation results show that the wave absorbing rate of the structure at 11.65GHz is as high as 99%, perfect wave absorption at a microwave frequency band is realized, the structure is not limited by the thickness of the traditional wave absorption, the size is small, but the structure has the defects of narrow frequency band, polarization sensitivity, angle sensitivity, inflexible regulation and the like. Then, researchers have conducted a great deal of beneficial research on the aspects of multi-frequency and wide-frequency band, insensitive polarization and angle, tunable property and the like, and the application range of the metamaterial wave absorber is widened, wherein the broadband metamaterial wave absorber has considerable application value in the fields of stealth, detection, imaging and the like.
Disclosure of Invention
In view of the above, the invention provides a broadband metamaterial wave absorber based on a slit trapezoid structure, and the broadband metamaterial wave absorber has the advantages of simple structure, insensitive polarization direction, insensitive incident angle, ultrathin property, wide wave absorbing frequency band and the like.
A broadband metamaterial absorber, comprising: the device comprises a metal patch (1), a patch resistor (2), a first dielectric substrate (3), a second dielectric substrate (4) and a metal reflecting plate (5);
the metal patch (1) is covered on the upper surface of the first dielectric substrate (3), the metal reflecting plate (5) is covered on the lower surface of the second dielectric substrate (4), and the lower surface of the first dielectric substrate (3) is fixedly connected with the upper surface of the second dielectric substrate (4);
the metal patches (1) are in a structure formed by 4 isosceles trapezoid patches which are centrosymmetric, the lower bottoms of the isosceles trapezoids are close to and parallel to the boundary of the first medium substrate (3), and gaps are reserved between the adjacent isosceles trapezoid patches; each isosceles trapezoid patch is provided with a gap penetrating through the upper bottom and the lower bottom along the trapezoid symmetry axis;
the patch resistor (2) is welded in a gap between two adjacent isosceles trapezoid patches and connected with the two isosceles trapezoid patches.
Preferably, the pad of the chip resistor (2) is positioned on the waist of the trapezoid, and the welding point is positioned 3/7 away from the upper bottom.
Preferably, the metal patch (1) is a copper foil with a thickness of 0.035 mm.
Preferably, the dielectric substrate (3) is an F4B plate with the dielectric constant of 2.2 and the thickness is 0.25 mm.
Preferably, the dielectric substrate (4) is PMI foam with the dielectric constant of 1.046 and the thickness of 2.5 mm.
Preferably, the metal reflecting plate (5) is a copper plate with the thickness of 1 mm.
Preferably, when the size of the isosceles trapezoid patch changes linearly, the thickness of the patch resistor (2), the first medium substrate (3) and the second medium substrate (4) is adjusted, so that the wave-absorbing frequency band of the wave absorber changes linearly.
The invention has the following beneficial effects:
the metamaterial wave absorber provided by the invention realizes wave absorption of more than 90% of wave absorption rate in a 6.87GHz-14.88GHz frequency band through the design of the centrosymmetric gap trapezoidal metal patches and the loading of the patch resistor, is insensitive to polarization and can still keep good wave absorption effect under the condition of incidence of 0-30 degrees; the metamaterial wave absorber provided by the invention is simple in structure and ultrathin, and the thickness of the metamaterial wave absorber is only 0.1 lambda (wavelength corresponding to the central frequency).
Drawings
Fig. 1 is a schematic diagram of a metamaterial wave absorber unit according to an embodiment of the present invention.
Fig. 2(a) is a top view of an upper metal patch structure and a patch resistor of the metamaterial wave absorber unit, and fig. 2(b) is a side view of the metamaterial wave absorber unit.
FIG. 3 is a reflection coefficient curve diagram of a metamaterial wave absorber at 0-30 incident according to an embodiment of the invention.
FIG. 4 is a wave absorption rate curve diagram of the metamaterial wave absorber in the embodiment of the invention when the metamaterial wave absorber is incident at 0-30 degrees.
Wherein, 1-metal patch; 2-chip resistance; 3-a first dielectric substrate; 4-a second dielectric substrate; 5-metal reflecting plate.
Detailed Description
The invention is described in detail below by way of example with reference to the accompanying drawings.
The invention provides a broadband metamaterial wave absorber unit, as shown in fig. 1, comprising: the chip comprises a metal chip 1, a chip resistor 2, a first dielectric substrate 3, a second dielectric substrate 4 and a metal reflecting plate 5.
The metal patch 1 is covered on the upper surface of the first dielectric substrate 3, the metal reflecting plate 5 is covered on the lower surface of the second dielectric substrate 4, and the lower surface of the first dielectric substrate 3 is adhered to the upper surface of the second dielectric substrate 4.
The chip resistor 2 is welded on the metal chip 1. Fig. 2(a) shows a top view of the metamaterial absorber unit structure of the present invention.
In the embodiment of the invention, the metal patch 1 is a structure consisting of 4 isosceles trapezoid patches with central symmetry, the lower bottom of each trapezoid is close to and parallel to the boundary of the first medium substrate 3, and a gap is reserved between every two adjacent trapezoids; the distance and the slit width of adjacent trapezoids are the same, so that impedance matching between the metamaterial wave absorber unit and a free space is realized; each isosceles trapezoid is provided with a gap penetrating through the upper bottom and the lower bottom of the trapezoid along the trapezoid symmetrical axis; the chip resistor 2 is a 1mm multiplied by 0.5mm chip resistor with a resistance value of 50 omega, and is welded on two adjacent gap trapezoid metal chips, and the bonding pad is positioned at 3/7 of the trapezoid waist from the upper bottom, so that the wave absorbing rate of the metamaterial wave absorber is increased, and the wave absorbing bandwidth is expanded.
The top view of the metamaterial wave absorber unit structure is shown in fig. 2(b), the first dielectric substrate 3 is made of F4B material with the dielectric constant of 2.2 and is 0.25mm thick, the second dielectric substrate 4 is made of PMI foam with the dielectric constant of 1.046 and is 2.5mm thick, and the first dielectric substrates 3 and 4 form a dielectric layer, so that the metamaterial wave absorber unit structure plays roles in supporting, consuming electromagnetic waves and expanding wave absorbing bandwidth. The metal reflecting plate 5 is arranged on the other side of the dielectric substrate and prevents the transmission of electromagnetic waves.
The cycle length of the metamaterial unit and the length and width of the dielectric substrate are both P, the upper bottom of the slit trapezoidal metal patch is L2, the lower bottom of the slit trapezoidal metal patch is L1, the height of the slit trapezoidal metal patch is h, the width of the slit is t1, the distance between the trapezoidal lower bottom and the unit boundary is t2, the distance between the midpoint of the patch resistor pad and the trapezoidal upper bottom w is, and the thicknesses of the dielectric substrate F4B and PMI foam are h _ F4b and h _ air respectively; optionally, in an embodiment of the present invention, the wave-absorbing frequency band may be changed by adjusting the sizes of the upper bottom L2, the lower bottom L1, the height h, the slot width t1, the distance unit boundary t2, the solder joint position w of the chip resistor, and the dielectric substrate thicknesses h _ f4b and h _ air of the slot trapezoid.
TABLE 1 structural size of broadband metamaterial absorber
Figure BDA0002908038630000041
Specific parameter values shown in table 1 are specific size values of the metamaterial wave absorber embodiment, and fig. 3 and 4 are a reflection coefficient curve and a wave absorption rate curve respectively under the condition that the incident wave angle of the metamaterial wave absorber embodiment is from 0-30 degrees. FIG. 3 is a reflection coefficient curve of an embodiment of the invention, and it can be seen from the reflection coefficient curve that the metamaterial absorber is at a frequency band S of 6.87-14.88GHz when the metamaterial absorber is vertically incident11All below-10 dB, completely covers the whole X wave band, wherein S is at the resonance points of 7.9GHz and 14.5GHz11Can reach-22.65 dB and-40.29 dB. When the incident angle is gradually increased, the high-frequency part of the reflection coefficient curve is obviously deteriorated, but the S frequency band of 7.05-12.75GHz can still be ensured within the range of 30 DEG11All are below-10 dB. FIG. 4 is a wave-absorbing rate curve calculated according to a reflection coefficient curve in the embodiment of the present invention, it can be seen that the wave-absorbing rates of the metamaterial wave absorber in the range of 6.87-14.88GHz are both greater than 90% at vertical incidence, the wave-absorbing rates can reach 99.46% and 99.99% at resonance points of 7.9GHz and 14.5GHz, and the wave-absorbing rate of more than 90% in the frequency band of 7.05-12.75GHz can still be ensured when the incidence angle changes in the range of 30 °. As can be seen from fig. 3 and 4, the metamaterial wave absorber unit provided by the embodiment of the invention realizes broadband wave absorption and has a wide-angle incident wave absorption performance.
In summary, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (7)

1. A broadband metamaterial absorber, comprising: the device comprises a metal patch (1), a patch resistor (2), a first dielectric substrate (3), a second dielectric substrate (4) and a metal reflecting plate (5);
the metal patch (1) is covered on the upper surface of the first dielectric substrate (3), the metal reflecting plate (5) is covered on the lower surface of the second dielectric substrate (4), and the lower surface of the first dielectric substrate (3) is fixedly connected with the upper surface of the second dielectric substrate (4);
the metal patches (1) are in a structure formed by 4 isosceles trapezoid patches which are centrosymmetric, the lower bottoms of the isosceles trapezoids are close to and parallel to the boundary of the first medium substrate (3), and gaps are reserved between the adjacent isosceles trapezoid patches; each isosceles trapezoid patch is provided with a gap penetrating through the upper bottom and the lower bottom along the trapezoid symmetry axis;
the patch resistor (2) is welded in a gap between two adjacent isosceles trapezoid patches and connected with the two isosceles trapezoid patches.
2. A broadband metamaterial absorber as claimed in claim 1, wherein the pad of the chip resistor (2) is located at the waist of the trapezoid, and the solder joint is located at 3/7 from the upper bottom.
3. A broadband metamaterial absorber as claimed in claim 1, wherein the metal patch (1) is a copper foil with a thickness of 0.035 mm.
4. The broadband metamaterial wave absorber of claim 1, wherein the first dielectric substrate (3) is an F4B board with a dielectric constant of 2.2 and a thickness of 0.25 mm.
5. The broadband metamaterial wave absorber of claim 1, wherein the second dielectric substrate (4) is PMI foam with a dielectric constant of 1.046 and a thickness of 2.5 mm.
6. The broadband metamaterial absorber of claim 1, wherein the metal reflector plate (5) is a copper plate with a thickness of 1 mm.
7. The broadband metamaterial wave absorber as claimed in claim 1, wherein when the size of the isosceles trapezoid patch changes linearly, the thickness of the patch resistor (2), the first dielectric substrate (3) and the second dielectric substrate (4) is adjusted so that the wave absorbing frequency band of the wave absorber changes linearly.
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CN113410655B (en) * 2021-06-10 2022-06-03 北京理工大学 Ultra-wideband wave absorber with symmetrical G-shaped bending structure
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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2251932A1 (en) * 2008-02-26 2010-11-17 Asahi Glass Company, Limited Artificial medium
KR20170098074A (en) * 2016-02-19 2017-08-29 국방과학연구소 A ultra-wideband metamaterial absorber
CN107257034A (en) * 2017-07-18 2017-10-17 东南大学 Low-frequency range Meta Materials wave absorbing device based on high magnetic permeability
CN108470973A (en) * 2018-03-09 2018-08-31 南京航空航天大学 Broadband RCS based on gap load reduces super surface
CN108539433A (en) * 2018-04-12 2018-09-14 北京理工大学 A kind of super-thin small wave-absorber device based on frequency-selective surfaces
CN111029788A (en) * 2019-12-11 2020-04-17 中国电子科技集团公司第十四研究所 Broadband metamaterial wave-absorbing structure with angle and polarization insensitivity
EP3716406A1 (en) * 2017-12-29 2020-09-30 Kuang-chi Cutting Edge Technology Ltd. Controllable wave-absorbing metamaterial
CN111817023A (en) * 2020-07-20 2020-10-23 重庆邮电大学 Terahertz narrow-band absorber based on split ring structure
CN212162089U (en) * 2020-05-01 2020-12-15 杭州灵芯微电子有限公司 Ultra-thin broadband metamaterial wave absorber unit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102717540A (en) * 2012-06-06 2012-10-10 电子科技大学 Low-frequency broadband electromagnetic wave absorbing structure
CN109524773B (en) * 2018-09-17 2020-07-31 宁波大学 Electromagnetic structure with stealth and communication functions

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2251932A1 (en) * 2008-02-26 2010-11-17 Asahi Glass Company, Limited Artificial medium
KR20170098074A (en) * 2016-02-19 2017-08-29 국방과학연구소 A ultra-wideband metamaterial absorber
CN107257034A (en) * 2017-07-18 2017-10-17 东南大学 Low-frequency range Meta Materials wave absorbing device based on high magnetic permeability
EP3716406A1 (en) * 2017-12-29 2020-09-30 Kuang-chi Cutting Edge Technology Ltd. Controllable wave-absorbing metamaterial
CN108470973A (en) * 2018-03-09 2018-08-31 南京航空航天大学 Broadband RCS based on gap load reduces super surface
CN108539433A (en) * 2018-04-12 2018-09-14 北京理工大学 A kind of super-thin small wave-absorber device based on frequency-selective surfaces
CN111029788A (en) * 2019-12-11 2020-04-17 中国电子科技集团公司第十四研究所 Broadband metamaterial wave-absorbing structure with angle and polarization insensitivity
CN212162089U (en) * 2020-05-01 2020-12-15 杭州灵芯微电子有限公司 Ultra-thin broadband metamaterial wave absorber unit
CN111817023A (en) * 2020-07-20 2020-10-23 重庆邮电大学 Terahertz narrow-band absorber based on split ring structure

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
基于电磁谐振的宽频周期吸波结构设计;张辉彬;《中国博士学位论文全文数据库》;20140615;正文第67-72页，图3-70至3-75 *

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