CN215989260U - Frequency selection device and electronic system - Google Patents
Frequency selection device and electronic system Download PDFInfo
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- CN215989260U CN215989260U CN202121476156.9U CN202121476156U CN215989260U CN 215989260 U CN215989260 U CN 215989260U CN 202121476156 U CN202121476156 U CN 202121476156U CN 215989260 U CN215989260 U CN 215989260U
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Abstract
The application provides a frequently select device and electronic system includes: a first dielectric layer, a second dielectric layer and an isolation layer; the surface of the first medium layer is provided with a first metal ring and a second metal ring, the second metal ring is arranged around the first metal ring, the second medium layer is provided with a wave-absorbing circuit, and the isolation layer is arranged between the first medium layer and the second medium layer and is used for matching with the first medium layer and the second medium layer to realize frequency selection of broadband electromagnetic waves. Through the mode, the frequency selection device can realize the frequency selection characteristic of a wide frequency band.
Description
Technical Field
The utility model belongs to the technical field of wireless communication, and particularly relates to a frequency selection device and an electronic system.
Background
Due to the unique electrical performance of the frequency selective structure, the frequency selective structure not only has wide application in the field of satellite communication, but also plays an important role in the aspect of aircraft stealth.
Most frequency selection structures only have single functions, such as wave absorption, wave transmission, cut-off and the like. The frequency selection structure generally utilizes a continuous metal film to block the transmission of incident electromagnetic waves, and perfect wave absorbing performance is realized in a working frequency band. However, due to the existence of the metal film, the radar scattering interface of the frequency selective structure at the non-resonant frequency is greatly increased, and the application of the radar scattering interface in the stealth field is limited. Meanwhile, due to the existence of the metal film, the frequency selection structure cannot realize the integration of wave absorbing property, wave transmission property, cut-off property and the like, and the application in the field of the radome is limited.
The wave absorbing mechanism of the frequency selection structure is mainly based on an impedance matching principle, and the impedance of the wave absorbing mechanism is matched with a free space by regulating and controlling an electric resonance unit and a magnetic resonance unit of the frequency selection structure, namely, electromagnetic waves incident to the surface of the frequency selection structure are not reflected and can enter the frequency selection structure to the maximum extent, and the electromagnetic waves entering the frequency selection structure are quickly consumed by a dielectric substrate, a resistance element and the like, so that perfect absorption is realized. However, most of the methods can only realize wave-absorbing characteristics, and are difficult to be compatible with wave-transparent and cut-off characteristics of other frequency bands.
SUMMERY OF THE UTILITY MODEL
The technical problem that this application mainly solved provides a frequency selection device, can realize the frequency selection characteristic of broadband.
In order to solve the above technical problem, the present application provides a frequency selection device, including: a first dielectric layer, a second dielectric layer and an isolation layer; the surface of the first medium layer is provided with a first metal ring and a second metal ring, the second metal ring is arranged around the first metal ring, the second medium layer is provided with a wave-absorbing circuit, and the isolation layer is arranged between the first medium layer and the second medium layer and is used for matching with the first medium layer and the second medium layer to realize frequency selection of broadband electromagnetic waves.
Preferably, the first metal ring and the second metal ring are formed in an axisymmetrical pattern, and the symmetry axes of the first metal ring and the second metal ring are coaxially disposed.
Preferably, the first metal ring and the second metal ring are both rectangular, and four sides of the second metal ring are provided with recesses facing the first metal ring.
Preferably, the recessed portions of the four sides of the second metal ring have the same size and are symmetrically disposed based on the symmetry axis of the second metal ring.
Preferably, the recessed portion is disposed at a middle position of each side of the second metal ring, and the recessed portion on each side is symmetrical based on a midpoint of the side.
Preferably, the wave absorbing circuit includes four RLC circuits and a plurality of strip lines, wherein two RLC circuits are connected by the strip lines, so that the four RLC circuits are arranged in parallel.
Preferably, the plurality of strip lines are arranged in a cross manner.
Preferably, the area of the first dielectric layer, the area of the second dielectric layer and the area of the isolation layer are equal.
Preferably, the first medium layer and the second medium layer are both made of FR4 board, and the isolation layer is made of foam material.
In order to solve the above technical problem, the present application further provides an electronic system including the frequency selection device according to any one of the above embodiments.
The beneficial effect of this application is: the surface of the first dielectric layer is provided with the first metal ring and the second metal ring, and the second metal ring is arranged around the first metal ring, so that the bimetallic ring on the first dielectric layer can form a multi-stop-band filter, and the high cut-off characteristics of the electromagnetic waves in low-frequency and high-frequency regions when the electromagnetic waves are transmitted through the first dielectric layer are further realized; meanwhile, the wave absorbing circuit is arranged on the second medium layer, so that the low-frequency region generates wave absorbing characteristics when the electromagnetic waves are transmitted through the second medium layer, and the high cut-off characteristic is realized in the high-frequency region, and further, the electromagnetic waves transmitted through the frequency selection structure have the characteristics of low-frequency wave absorbing, medium-frequency wave transmitting and high-frequency cut-off.
Drawings
FIG. 1 is a side view of the structure of an embodiment of the frequency selection device of the present application;
FIG. 2 is a front view of the frequency selection device shown in FIG. 1;
FIG. 3 is a graph of S parameter simulation results for a first dielectric layer of the present application;
FIG. 4 is a rear view of the structure of the frequency selection device shown in FIG. 1;
FIG. 5 is a graph of S parameter simulation results for a second dielectric layer of the present application;
FIG. 6 is a diagram of simulation results of S parameters of the frequency selective device of the present application;
FIG. 7 is a graph of simulation results of wave absorption rate and wave transmission rate of the frequency selective device of the present application;
FIG. 8 is a graph of simulation results of S parameters of the frequency selective device under excitation of electromagnetic waves with different polarization directions.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be noted that the following examples are only illustrative of the present application, and do not limit the scope of the present application. Likewise, the following examples are only some examples and not all examples of the present application, and all other examples obtained by a person of ordinary skill in the art without any inventive step are within the scope of the present application.
The terms "first," "second," "third," "fourth," and the like in the description and in the claims of the present application and in the drawings described above, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are, for example, capable of operation in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Referring to fig. 1, fig. 1 is a side view of an embodiment of a frequency selection device according to the present application.
As shown in fig. 1, the frequency selective device 10 in this embodiment includes a first dielectric layer 11, an isolation layer 13, and a second dielectric layer 12. The surface of the first medium layer 11 is provided with a first metal ring 110 and a second metal ring 120, the second metal ring 120 is arranged around the first metal ring 110, the second medium layer 12 is provided with a wave-absorbing circuit 210, and the isolation layer 13 is arranged between the first medium layer 11 and the second medium layer 12 and is used for matching with the first medium layer 11 and the second medium layer 12 to realize frequency selection of broadband electromagnetic waves.
As shown in fig. 1, the first dielectric layer 11, the isolation layer 13 and the second dielectric layer 12 are sequentially arranged from top to bottom along the thickness direction of the frequency selection device 10, and the three layers are fixedly connected, for example, by high temperature curing of an adhesive film.
Referring to fig. 2, fig. 2 is a front view of the frequency selection device shown in fig. 1. As shown in fig. 2, a first metal ring 110 and a second metal ring 120 are disposed on a surface of the first dielectric layer 11, an area of the first metal ring 110 is smaller than an area of the second metal ring 120, and the first metal ring 110 and the second metal ring 120 are disposed inside the second metal ring 120, so that the first metal ring 110 and the second metal ring 120 form a ring structure, and the ring structure of the first metal ring 110 and the second metal ring 120 has better frequency stability.
When the low-frequency electromagnetic wave reaches the first dielectric layer 11, due to the cut-off characteristic of the second metal ring 120, the low-frequency electromagnetic wave cannot pass through the surface metal layer of the first dielectric layer 11, so that the wave-transparent coefficient is small, and therefore the low-frequency electromagnetic wave cannot pass through the entire frequency selection device 10. Due to the frequency selection characteristic of the metal structure formed by the first metal ring 110 and the second metal ring 120, the first dielectric layer 11 exhibits cut-off characteristics in low-frequency and high-frequency regions, and the middle-frequency band region exhibits wave-transparent characteristics.
Further, the second medium layer 12 is provided with a wave-absorbing circuit 210, the wave-absorbing circuit 210 can be set to generate a wave-absorbing characteristic in a low-frequency region of the electromagnetic wave, and has a high cut-off characteristic in a high-frequency region, so that a large amount of medium-frequency electromagnetic waves in the electromagnetic waves transmitted to the second medium layer 12 can be transmitted, and the frequency selection characteristic of the frequency selection device 10 in a wide frequency band is realized.
The thickness of the frequency selection device 10 has an influence on both the position of the wave-absorbing frequency band and the wave-absorbing bandwidth of the frequency selection device 10. The large or small thickness of the frequency selection device 10 will cause the wave-absorbing bandwidth and the in-band absorption rate to be deteriorated, and the size and thickness of 18mm by 16.25mm can be adopted for the frequency selection device 10 in this embodiment as verified by simulation test results.
Further, the isolation layer 13 may keep a certain distance between the first dielectric layer 11 and the second dielectric layer 12, and when the electromagnetic wave is incident on the frequency selection device 10, the distance formed by the isolation layer 13 matches with the first metal ring 110, the second metal ring 120 and the wave-absorbing circuit 210 to realize the frequency selection characteristic of a broadband.
Specifically, the sizes of the first dielectric layer 11 and the second dielectric layer 12 are generally fixed, and the thickness of the isolation layer 13 can be adjusted according to different requirements in the actual simulation test process, so that the design flexibility is increased.
Further, the first metal ring 110 and the second metal ring 120 may be disposed in an axisymmetric pattern, and the symmetry axes of the first metal ring 110 and the second metal ring 120 are coaxially disposed.
The frequency selective surface is a periodic array structure typically arranged in a one-or two-dimensional array by metallic resonant cells to create a spatial filtering effect. Specifically, the first metal ring 110 and the second metal ring 120 may be made of copper, and the thicknesses of the first metal ring 110 and the second metal ring 120 may be set to meet normal processing requirements and be greater than the skin depth of the electromagnetic wave.
Further, the first metal ring 110 and the second metal ring 120 may be disposed in an axisymmetric pattern, such as a rectangle, a circle, a hexagon, a triangle, etc., and the symmetry axes of the first metal ring 110 and the second metal ring 120 are disposed coaxially, so that the distances between the metal resonant units in the frequency selective surface formed by the periodic arrangement of the frequency selective device 10 in the present embodiment are uniformly distributed to improve the spatial filtering effect.
Further, the shape of the first metal ring 110 and the shape of the second metal ring 120 are both rectangular, and four sides of the second metal ring 120 are provided with recesses 121 facing the first metal ring 110.
As shown in fig. 2, the outer profiles of the first metal ring 110 and the second metal ring 120 are both square ring shapes. The square annular unit is simple in form, wide in resonance bandwidth ratio and good in incident angle stability.
Further, the length change of the first metal ring 110 and the second metal ring 120 directly affects the resonant frequency, and decreasing the length thereof increases the resonant frequency, and the size of the first metal ring 110 and the second metal ring 120 can be adjusted to achieve the resonant frequency required by the frequency selection device 10 according to the specific application requirement.
Further, miniaturization of the cell size is a very important characteristic in the design and application of frequency selective surfaces, because the miniaturized frequency selective device 10 can make the resonant frequency of the frequency selective device 10 far away from the free-space grating lobe or the dielectric surface wave, improve the stability of the frequency response of the frequency selective device 10 to the incident angle, reduce the deterioration of the transmission characteristic due to cell shape distortion in the application of limited large size, and also improve the angle stability at oblique incidence.
The miniaturization of the first metal ring 110 and the second metal ring 120 in the first dielectric layer 11 can be generally realized by a lumped device loading or zigzag frequency selection structure, because the number of the loaded lumped devices is huge, the frequency selection structure has higher cost and inconvenient processing and installation, and the zigzag structure can be directly miniaturized by using a planar printed circuit technology, so that the miniaturization of the frequency selection structure formed by the first metal ring 110 and the second metal ring 120 is realized by bending the second metal ring 120, namely arranging the concave parts 121 facing the direction of the first metal ring 110 on four side marks of the second metal ring 120.
Further, the recesses 121 on the four sides of the second metal ring 120 are equal in size and are symmetrically disposed based on the symmetry axis of the second metal ring 120. The concave portion 121 is disposed at the middle of each side of the second metal ring 120, and the concave portion 121 on each side is symmetrical based on the midpoint of the side.
Four sides of the second metal ring 120 may be bent, as shown in fig. 2, and four opposite corners of the second metal ring 120 form a fractal-like annular metal ring structure. The bending increases the inductance of the bent second metal ring 120, and the design of structure miniaturization is realized.
Further, the recesses 121 on all sides of the second metal ring 120 are equal in size, and the recesses 121 on opposite sides of the second metal ring 120 are symmetrical about the axis of symmetry of the second metal ring 120. And the concave part 121 on each side is located in the middle of the side and is symmetrical about the midpoint of the side, so that the first metal ring 110 and the bent second metal ring 120 are both in a rotational symmetrical structure, and the symmetrical design can obtain better angle stability when the electromagnetic waves are obliquely incident.
If scattered waves appearing in all directions, including specular reflection and grating lobe scattering, cannot be effectively absorbed in the wave-absorbing frequency band, the wave-absorbing effect is affected, and the scattering area is increased due to possible backward grating lobe scattering. In consideration of the effect of miniaturization design and the effect of realizing the grating lobe suppression, in the present embodiment, the concave portion 121 is formed by the second metal ring 120 which is bent inward, the concave portion 121 can increase the equivalent inductance of the second metal ring 120, the coupling capacitance of the frequency selection device 10 is increased by the compact distance, the frequency selection device 10 can resonate at a lower frequency, and thus the frequency selection device 10 is miniaturized, and the effect of suppressing the generation of the grating lobe is realized.
Further, the metal double-ring structure formed by the first metal ring 110 and the second metal ring 120 can generate a multi-resonance effect, and can generate a strong induced current on an electromagnetic wave square ring within a broadband range of 3-9 GHz.
Specifically, please refer to fig. 3, fig. 3 is a graph of simulation results of S-parameters of the first dielectric layer according to the present application. As shown in fig. 3, the frequency selective structure formed by the first metal ring 110 and the second metal ring 120 in the first dielectric layer 11 has a return loss (S11) less than-10 dB in a frequency band range of 6.0GHz to 8.5GHz, i.e., a 2.5GHz wide pass band is generated; the first metal ring 110 and the second metal ring 120 can generate a broadband high-frequency wave-transmitting forbidden band, and generate a high cut-off characteristic near 4GHz, and for a transmission zero point of 4.0GHz, the insertion loss of the first metal ring and the second metal ring reaches below-30 dB; the return loss S11 is less than-10 dB at high frequency of 11.4GHz-12.8 GHz.
Further, the wave absorbing circuit 210 includes four RLC circuits 211 and a plurality of strip lines 212, wherein two RLC circuits 211 are connected by the strip lines 212 so that the four RLC circuits 211 are arranged in parallel. And the plurality of strip lines 212 are arranged in a cross.
In this embodiment, the strip lines 212 may be made of copper, and the LC circuits may be parallel LC circuits, and may be provided as lumped elements. The parallel LC circuit can realize band-pass frequency selection on one hand, and compared with the series LC circuit, the parallel LC circuit has almost no influence on energy consumption due to impedance change of other parts except the LC parallel part, so that the stability is better.
Referring to fig. 4, fig. 4 is a rear view of the frequency selection device shown in fig. 1. As shown in fig. 1, the wave absorbing circuit 210 is disposed in a cross shape, and includes four parallel RLC circuits 211, and the four parallel RLC circuits 211 are respectively disposed on four sides of the cross shape.
Specifically, four parallel RLC circuits 211 in the wave absorbing circuit 210 are divided into two groups, each group includes two parallel RLC circuits 211, and the two parallel RLC circuits 211 of each group are connected in series through a strip line to form a series circuit.
Furthermore, when the incident electromagnetic waves of the two series circuits are low frequency, the inductance is short-circuited, so that the output electromagnetic waves are less, and the low frequency wave absorbing characteristic is realized. On the other hand, when the incident electromagnetic wave is a high frequency, the capacitor is short-circuited, so that the output electromagnetic wave is relatively small, and the high frequency cutoff characteristic is realized.
Further, two serial wave-absorbing circuits are placed in a cross manner, so that four parallel RLC circuits 211 are arranged on four sides of the cross and are rotationally symmetric about the center of the cross. Further, the center of the cross may be disposed at the center of the second medium layer 12 to achieve rotational symmetry of the four parallel RLC circuits 211 about the center of the second medium layer 12. The frequency selective surface consisting of the periodic arrangement of the frequency selective devices 10 in this embodiment can be made to have non-polarized characteristics, i.e. to have the same frequency response to the vertically incident TE/TM waves, in the manner described above, while keeping the size of the frequency selective device 10 unchanged.
Specifically, referring to fig. 5, fig. 5 is a graph of simulation results of S-parameters of the second dielectric layer of the present application. As shown in fig. 5, the wave absorbing circuit 210 in the second medium layer 12 generates low-frequency wave absorption based on the serial RLC circuits connected in parallel, and simultaneously generates high cut-off characteristics near 11GHz, and the return loss (S11) is less than-6.5 dB in the frequency band range of 0 GHz-10.3 GHz; within the frequency band range of 11.7 GHz-16 GHz, the return loss (S11) is less than-10 dB; at the same time, an absorption band is generated at a frequency of 4.4GHz, corresponding to a return loss of 6.5dB and an insertion loss of 5.5 dB.
Further, the first medium layer 11 and the second medium layer 12 may be both made of FR4 board, and the isolation layer 13 may be made of foam.
The FR4 board has high strength, and has the characteristics of acid and alkali resistance and resistance to various organic solvents, and is almost insoluble in all solvents. Meanwhile, the polytetrafluoroethylene has the characteristic of high temperature resistance, so that the frequency selection device 10 can be applied to more scenes.
The isolation layer 13 can select PMI foam that dielectric constant is close to air (being approximately equal to 1) and intensity is higher, and the dielectric property of isolation layer 13 is close to air, can widen the bandwidth of inhaling the wave effectively.
Specifically, please refer to fig. 6 and 7, in which fig. 6 is a simulation result diagram of S parameters of the frequency selective device of the present application, and fig. 7 is a simulation result diagram of wave absorption rate and wave transmission rate of the frequency selective device of the present application. As shown in fig. 6 and 7, in the frequency selection device 10 of the present application, the return loss (S11) and the insertion loss (S11) are both less than-10 dB near the 4.0GHz band, so as to generate a 1.8GHz wave-absorbing frequency band, where the absorption rate reaches over 90%; in the frequency range of 6.1GHz-8.1GHz, the structure has a high wave transmission area, and the wave transmission rate is more than 80%. In the frequency range of 10.8GHz-12.8GHz, S11 is smaller than-10 dB, and a 2GHz transmission forbidden band is formed.
In summary, in the present application, by setting a three-layer sandwich structure of the first dielectric layer 11, the isolation layer 13, and the second dielectric layer 12 of the frequency selection device 10, and setting the first metal ring 110 on the first dielectric layer 11 to be square, and the second metal ring 120 to be a bent square surrounding the first metal ring 110, not only can the miniaturization of the frequency selection structure in the first dielectric layer 11 be achieved, but also the frequency selection structure can have high absorption of low-frequency electromagnetic waves and cut-off characteristics of high-frequency electromagnetic waves; meanwhile, the wave absorbing circuit 210 in the second medium layer 12 has high cut-off characteristics of low-frequency wave absorption and high-frequency wave absorption, and the RLC circuits in the wave absorbing circuit 210 are arranged in central rotational symmetry, so that the frequency selection surface formed by periodically arranging the frequency selection device 10 has the characteristic of no polarization. In combination with the structural arrangement of the wave-absorbing circuit 210, the first metal ring 110 and the second metal ring 120, due to the superposition effect of electromagnetic properties, the frequency selection device 10 has a high wave-absorbing property in a low-frequency region, a high wave-transmitting property in a middle frequency band, and a high cut-off property in a high-frequency region, and realizes a plurality of cut-off zeros in the high-frequency region, thereby generating a very wide cut-off bandwidth.
Specifically, please refer to fig. 8, fig. 8 is a diagram illustrating simulation results of S parameters of the frequency selective device under excitation of electromagnetic waves with different polarization directions. As shown in fig. 8, the S-parameter simulation curves of the entire structure are almost coincident at three polarization angles (0 °, 45 °, and 90 °) of the frequency-selective device 10, and the frequency-selective structure has perfect rotational symmetry.
Further, to solve the above technical problem, the present application further provides an electronic system including the frequency selection apparatus 10.
The above description is only an embodiment of the present application, and not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes performed by the content of the present specification and the attached drawings, or applied to other related technical fields directly or indirectly, are included in the scope of the present invention.
Claims (10)
1. A frequency selective arrangement, comprising:
a first dielectric layer, a second dielectric layer and an isolation layer;
the surface of the first medium layer is provided with a first metal ring and a second metal ring, the second metal ring is arranged around the first metal ring, the second medium layer is provided with a wave-absorbing circuit, and the isolation layer is arranged between the first medium layer and the second medium layer and used for matching with the first medium layer and the second medium layer to realize frequency selection of broadband electromagnetic waves.
2. The frequency-selective device according to claim 1, wherein the first metal ring and the second metal ring are in an axisymmetric pattern, and symmetry axes of the first metal ring and the second metal ring are coaxially arranged.
3. The frequency selection device according to claim 2, wherein the first metal ring and the second metal ring are rectangular, and four sides of the second metal ring are provided with recesses facing the first metal ring.
4. The frequency selection device according to claim 3, wherein the recesses of the four sides of the second metal ring are equal in size and are symmetrically arranged based on the symmetry axis of the second metal ring.
5. The frequency selection device according to claim 4, wherein the recess is disposed at a middle position of each side of the second metal ring, and the recess on each side is symmetrical based on a midpoint of the side.
6. The frequency-selective apparatus according to claim 1, wherein the wave-absorbing circuit comprises four RLC circuits and a plurality of strip lines, wherein two RLC circuits are connected by the strip lines, so that the four RLC circuits are arranged in parallel.
7. The frequency selective arrangement of claim 6, wherein a plurality of said striplines are arranged in a cross.
8. The frequency selective device of claim 1, wherein the area of the first dielectric layer, the area of the second dielectric layer, and the area of the isolation layer are equal.
9. The frequency selective device of claim 1, wherein the first dielectric layer and the second dielectric layer are each FR4 board, and the insulating layer is a foam material.
10. An electronic system comprising a frequency selective arrangement as claimed in any one of claims 1 to 9.
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| CN202121476156.9U CN215989260U (en) | 2021-06-29 | 2021-06-29 | Frequency selection device and electronic system |
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| CN202121476156.9U CN215989260U (en) | 2021-06-29 | 2021-06-29 | Frequency selection device and electronic system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114597672A (en) * | 2022-03-22 | 2022-06-07 | 电子科技大学 | Ultra-wideband wave absorbing structure based on multilayer resistance type FSS and preparation method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114597672A (en) * | 2022-03-22 | 2022-06-07 | 电子科技大学 | Ultra-wideband wave absorbing structure based on multilayer resistance type FSS and preparation method |
| CN114597672B (en) * | 2022-03-22 | 2024-03-19 | 电子科技大学 | Ultra-wideband wave absorbing structure based on multilayer resistance type FSS and preparation method |
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