CN112928073A - 一种igbt功率模块装置及制造方法 - Google Patents

一种igbt功率模块装置及制造方法 Download PDF

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CN112928073A
CN112928073A CN202110422434.0A CN202110422434A CN112928073A CN 112928073 A CN112928073 A CN 112928073A CN 202110422434 A CN202110422434 A CN 202110422434A CN 112928073 A CN112928073 A CN 112928073A
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igbt
shell
pcb
single tube
power module
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张子义
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Shenyang Yifeng Electrical Appliance Co ltd
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    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Engineering & Computer Science (AREA)
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Abstract

本发明公开了一种IGBT功率模块的装置及制备方法，它是将IGBT单管及肖特基二极固定在基板上，基板上方固定有PCB板，PCB板上有孔，IGBT单管有引脚，引脚垂直于基板向上引出,穿过转接PCB板焊接到转焊板上，外壳固定在基板上,外壳有针孔，PCB板引出脚穿过针孔引出，PCB板上的引脚位置与现有技术的IGBT功率模块的位置相同。本发明采用的四只IGBT单管和两只肖特基二极管，用其组成了一个和三电平拓扑结构的IGBT功率模块芯片相同功能的装置，并且接线方式和尺寸完全相同，我们可以封装各种IGBT专用模块，这样可以代替进口的产品，其功能和控制线路可以和现在国际标准产品接轨。

Description

一种IGBT功率模块装置及制造方法
技术领域
本发明涉及IGBT功率模块制造领域，准确的说他是650V电压等级，三电平拓扑结构电流75安培的IGBT功率模块的装置及制造方法。
背景技术
IGBT功率模块电压等级650V***，三电平拓扑结构的功率模块，主要应用于电力行业及新能源领域，如变频器、光伏逆变器、静止无功发生器（SVG)以及有源滤波器（APF),产品主要是国际品牌英飞凌以及国内品牌斯达等，但是英飞凌处于垄断地位，国内品牌都受制于国际大品牌，因此非常需要一种自主创新的设计技术来增加我国自主产品的竞争力，现有650V电压***，三电平拓扑结构的IGBT功率模块的拓扑结构原理图如图1，现在国际国内的产品结构图如图2。
发明内容
本发明的目的是提供一种自主设计，用650V/75A的IGBT 单管为原器件根据三电平拓扑结构原理图，设计出用4个IGBT单管（芯片）和两个650V/75A的肖特基二极管作续流二极管经过绝缘陶瓷片绝缘隔离后固定在基板上，按照拓扑原理图连接后经过转接PCB板转接后，转换成能够和现有的国际标准产品接口完全兼容的产品。
本发明的技术方案如下：
IGBT功率模块的装置，包括IGBT单管1、二极管2、基板3、引脚4、PCB板5、外壳6，NTC温度探头7，外并门极电容8，其特征在于：IGBT单管1及二极管固定在基板3上，基板3上方固定有PCB板，PCB板上有孔，IGBT单管1有引脚4，引脚4垂直于基板向上引出, 穿过转接PCB板焊接到转焊板上，外壳6固定在基板3上, 外壳6有针孔，PCB板引出脚穿过针孔引出，PCB板上的引脚位置与现有技术的IGBT功率模块的位置相同。二极管2是肖特基续流二级管。外壳采用塑料外壳为宜。
IGBT功率模块装置的制造方法：其特征在于：
1.把IGBT单管1和肖特基续流二极管2经过陶瓷片绝缘用螺丝固定在基板栅上；
2.根据三电平拓扑原理图把IGBT单管1和肖特基续流二极管2连接，把门极调节电容8并连在IGBT单管1；
3.把需要引出的引脚垂直于基板向上引出，穿过转接PCB板焊接到转焊板上5，
4.通过转焊板转化成国际标准产品引出方式，
5.把外壳6固定在基板栅上，塑料壳6按照国际标准产品预留引出针孔，引出针3穿过预留孔引出到外壳外面；
6.通过外壳预留灌注孔，把硅凝脂灌注到外壳内部固化，
7.通过IGBT测试仪测试合格后包装出厂。
本发明的有益技术效果
1.由于本发明采用的四只IGBT单管（1）和两只肖特基二极管（2）都是很容易采购到的普通常规产品，用其组成了一个和三电平拓扑结构的IGBT功率模块芯片相同功能的装置，并且接线方式和尺寸完全相同，我们可以封装各种IGBT专用模块，这样可以代替进口的产品，其功能和控制线路可以和现在国际标准产品接轨
2，成本大大降低，是国际大品牌产品的5-10分之一，国内仿制产品的3-5分之一
附图说明
图1是现有技术IGBT功率模块的拓扑结构原理图。
图2是现有技术的产品IGBT模块结构图。
图3是IGBT单管结构示意图。
图4是IGBT单管和续流二极管固定在基板上结构示意图。
图5是架空PCB板转焊图。
图6是IGBT模块总装图1。
图7是IGBT模块总装图2。
图中1是IGBT；2是肖特基续流二级管；3是基板；4是引脚；5是PCB转焊板；6是塑料壳；7是NTC温度探头；8是外并门极电容；9是焊层；10是超声波引线键合；11是芯片；12是PCB衬板。
具体实施方式
备齐附图中零部件，参照附图连接。包括IGBT单管1、二极管2、基板3、引脚4、PCB板5、外壳6，NTC温度探头7，外并门极电容8，IGBT单管1及肖特基二极管2固定在基板3上，基板3上方固定有PCB板，PCB板上有孔，IGBT单管1有引脚4，引脚4垂直于基板向上引出, 穿过转接PCB板焊接到转焊板上，外壳6固定在基板3上, 外壳6有针孔，PCB板引出脚穿过针孔引出，PCB板上的引脚位置与现有技术的IGBT功率模块的位置相同。
制备方法如下：
1.把IGBT单管经过陶瓷片绝缘用螺丝固定在基板上，如图4.
2.根据3电平拓扑原理图把单管连接入图4，把门极调节用电容并在单管上
3.把需要引出的引脚垂直于基板向上引出，穿过转接PCB板焊接到转焊板上。
4.转焊板转化成国际标准产品引出方式如图5.
5.把塑料壳固定在基板上入图6，塑料壳按照国际标准产品预留引出针孔，引出针穿过预留孔引出到外壳外面
6.通过塑料壳预留灌注孔，把硅凝脂灌注到外壳内部固化
7.通过IGBT测试仪测试合格后包装出厂。测试方法和参数与现有技术相同。

Claims (3)

1.IGBT功率模块的装置，包括IGBT单管（1）、二极管（2）、基板（3）、引脚（4）、PCB板（5）、外壳（6），NTC温度探头（7），外并门极电容（8），其特征在于：IGBT单管（1）及二极管（2）固定在基板（3）上，基板（3）上方固定有PCB板，PCB板上有孔，IGBT单管（1）有引脚（4），引脚（4）垂直于基板向上引出, 穿过转接PCB板焊接到转焊板上，外壳（6）固定在基板（3）上, 外壳（6）有针孔，PCB板引出脚穿过针孔引出，PCB板上的引脚位置与现有技术的IGBT功率模块的位置相同。
2.根据权利要求1所述的IGBT功率模块的装置，其特征在于：二极管（2）是肖特基续流二级管。
3.一种如权利要求1所述的IGBT功率模块装置的制造方法：其特征在于：
（1）把IGBT单管（1）和肖特基续流二极管（2）经过陶瓷片绝缘用螺丝固定在基板栅上；
（2）根据三电平拓扑原理图把IGBT单管(1)和肖特基续流二极管（3）连接，把门极调节电容（8）并连在IGBT单管(1)；
（3）把需要引出的引脚垂直于基板向上引出，穿过转接PCB板焊接到转焊板上（5）；
（4）通过转焊板转化成国际标准产品引出方式；
（5）把外壳（6）固定在基板栅上，外壳（6）按照国际标准产品预留引出针孔，引出针（3）穿过预留孔引出到外壳外面；
（6）通过外壳预留灌注孔，把硅凝脂灌注到外壳内部固化，
（7）通过IGBT测试仪测试合格后包装出厂。
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