CN112802886A - Micro OLED display and production method thereof - Google Patents
Micro OLED display and production method thereof Download PDFInfo
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- CN112802886A CN112802886A CN202110219241.5A CN202110219241A CN112802886A CN 112802886 A CN112802886 A CN 112802886A CN 202110219241 A CN202110219241 A CN 202110219241A CN 112802886 A CN112802886 A CN 112802886A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000010410 layer Substances 0.000 claims abstract description 175
- 239000012044 organic layer Substances 0.000 claims abstract description 34
- 229920001621 AMOLED Polymers 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000005538 encapsulation Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000004806 packaging method and process Methods 0.000 claims abstract description 16
- 238000007641 inkjet printing Methods 0.000 claims abstract description 13
- 239000011248 coating agent Substances 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 239000004925 Acrylic resin Substances 0.000 claims description 9
- 229920000178 Acrylic resin Polymers 0.000 claims description 9
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 abstract description 8
- 239000002245 particle Substances 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The invention discloses a Micro OLED display and a production method thereof, wherein the production method comprises the following steps: preparing a CMOS driving circuit on a silicon wafer substrate to obtain a substrate, and preparing an AMOLED light emitting layer on the substrate according to a pixel arrangement structure; preparing an inorganic-organic stacked encapsulation layer on the AMOLED light emitting layer; preparing an organic planarization layer on the packaging layer by means of ink-jet printing; performing RGB coating on the organic buffer layer to form a color filter layer; according to the invention, the organic layer and the organic planarization layer are prepared in an ink-jet printing mode, the organic planarization layer and the organic layer can be prepared as required, and the organic planarization layer is prepared by adopting a specific material, so that the problems of uneven spin coating of the organic layer and the organic planarization layer and the matching of the organic planarization layer and the packaging layer are solved, the working procedures are reduced, and the performance of the device is improved.
Description
Technical Field
The invention belongs to the technical field of Micro OLED display, and particularly relates to a Micro OLED display and a production method thereof.
Background
The silicon-based OLED display is a novel display technology combining a semiconductor and an OLED, and is a main scheme of VR/AR and other next-generation intelligent wearable display. With the continued advancement of 5G and AI technologies, more and more wearable display products will become more attractive. The silicon-based OLED micro display device has the advantages of high resolution, low power consumption, small size, light weight and the like, is widely applied to high-resolution near-to-eye display industries such as AR, VR, wearable equipment, industrial security, medical treatment and the like, gradually becomes an important point of a novel display industry, and has great market potential. Organic Light Emitting Display (OLED) is a new generation of Display, and has many advantages of self-luminescence, fast response, wide viewing angle, color saturation, etc. compared with liquid crystal Display.
Before RGB coating, an organic planarization layer needs to be deposited on a substrate after evaporation packaging, a spin coating mode is adopted at present, the coating requirement of RGB color filter can be met, but the pad area organic planarization layer needs to be etched subsequently, and the process is complex. The packaging of the substrate at present adopts a new film packaging technology, when an inorganic-organic superposition mode is adopted, a layer of organic planarization layer is deposited, the spin coating is easy to be abnormal, and if the material of the organic planarization layer is not properly selected, the matching between the organic planarization layer and the packaging layer is poor, and the performance of the device is influenced.
Disclosure of Invention
In order to solve the technical problems, the invention provides a Micro OLED display and a production method thereof, wherein an organic layer and an organic planarization layer are prepared in an ink-jet printing mode, the organic planarization layer and the organic layer can be prepared as required, and the organic planarization layer is prepared by adopting a specific material, so that the problems of uneven spin coating of the organic layer and the organic planarization layer and the matching of the organic planarization layer and an encapsulation layer are solved, the working procedures are reduced, and the performance of the device is improved.
In order to achieve the purpose, the invention adopts the technical scheme that;
a method for producing a Micro OLED display comprises the following steps:
(1) preparing a CMOS driving circuit on a silicon wafer substrate to obtain a substrate, and preparing an AMOLED light emitting layer on the substrate according to a pixel arrangement structure;
(2) preparing a first inorganic layer on the AMOLED light-emitting layer, preparing an organic layer on the first inorganic layer in an ink-jet printing mode, wherein the area of the organic layer is smaller than that of the first inorganic layer, and preparing a second inorganic layer on the outer surface of the organic layer to obtain an encapsulation layer on the AMOLED light-emitting layer;
(3) preparing an organic planarization layer on the packaging layer by means of ink-jet printing;
(4) and performing RGB coating on the organic buffer layer to form a color filter layer.
Furthermore, the material of the organic planarization layer is acrylic resin, and the thickness of the organic planarization layer is 0.5-1.0 μm.
The thickness of the first inorganic layer is 500-1000 nm, preferably 500 nm; the material of the first inorganic layer is SiN.
The thickness of the second inorganic layer is 500-1000 nm, preferably 500 nm; the material of the second inorganic layer is SiN.
The thickness of the organic layer is 1-6 μm, preferably 2 μm; the material of the organic layer is acrylic resin or epoxy resin, and acrylic resin is preferred.
The thickness of the AMOLED light emitting layer is 100-300 nm.
The thickness of the color filter layer is 1-4 μm.
In the color filter layer, the color filter layers are arranged in parallel according to the R, G, B sequence, the thickness of the R filter layer is 2.4 μm, the thickness of the G filter layer is 1.6 μm, and the thickness of the B filter layer is 3 μm.
The invention also provides a Micro OLED display produced by the production method, and the Micro OLED display comprises:
a substrate;
an AMOLED light emitting layer located over the substrate;
an encapsulation layer over the AMOLED light emitting layer;
an organic planarization layer over the encapsulation layer;
a color filter layer over the organic buffer layer;
the packaging layer comprises a first inorganic layer, an organic layer and a second inorganic layer, the first inorganic layer is positioned on the AMOLED light-emitting layer, the organic layer is positioned on the first inorganic layer, and the second inorganic layer is arranged on the outer surface of the organic layer and is hermetically connected with the first inorganic layer. The packaging effect of the packaging layer on the substrate is better.
Compared with the prior art, the invention has the following beneficial effects:
1. the inorganic layer is adopted as the packaging layer, which easily causes peeling or cracking of the film layer, and the inorganic layer has poor coating property on the particles, as shown in fig. 2; the organic encapsulation layer of the ink-jet printing (IJP printing) has good particle coating capability, and has a great improvement on the encapsulation performance of the substrate, as shown in fig. 3.
2. The patterning printing of the organic packaging layer can be realized through ink-jet printing, the efficiency is high, in order to ensure the coating capability of the organic layer on particles, the printing thickness of IJP printing is 1-6 mu m, therefore, if the subsequent process adopts a spin coating mode to manufacture the organic planarization layer, the thickness of the organic planarization layer is generally 0.5-1 mu m, and the pad area (a terminal area and a wiring area) is about 2-4 mu m lower than that of an AA area (an effective light emitting area), so that certain difficulty is brought to the spin coating of the organic planarization layer, the spin coating is easy to be uneven, the organic planarization layer in the pad area also needs to be removed in an exposure development etching mode, and the process is complicated; the invention adopts an ink-jet printing mode to manufacture the organic planarization layer, realizes the positioning printing according to the requirement and avoids the abnormity of uneven spin coating caused by the difference of the film thickness of the AA area and the Pad area.
The organic planarization layer and the organic layer can be uniformly manufactured as required by adopting an ink-jet printing mode to prepare the organic layer and the organic planarization layer, so that materials are saved, and the process is simplified; and the acrylic resin material is adopted to prepare the organic planarization layer, the matching performance of the organic planarization layer and the second inorganic layer material in the packaging layer contacted with the organic planarization layer is good, and the performance of the device can be optimized.
Drawings
FIG. 1 is a structural diagram of a Micro OLED display produced in example 1;
FIG. 2 is a schematic diagram of the encapsulation of particles with an inorganic layer as the encapsulation layer;
FIG. 3 is a schematic diagram of the wrapping of particles when inorganic-organic stacked layers are used as the encapsulation layers;
the organic light emitting diode comprises a substrate 01, an AMOLED light emitting layer 02, an AMOLED packaging layer 03, an encapsulation layer 031, a first inorganic layer 032, an organic layer 033, a second inorganic layer 04, an organic planarization layer and a color filter layer 05.
Detailed Description
The present invention will be described in detail with reference to examples.
Example 1
A method for producing a Micro OLED display comprises the following steps:
(1) preparing a CMOS driving circuit on a silicon wafer substrate to obtain a substrate, and preparing an AMOLED light emitting layer on the substrate according to a pixel arrangement structure;
(2) preparing a first inorganic layer on the AMOLED light-emitting layer, preparing an organic layer on the first inorganic layer in an ink-jet printing mode, wherein the area of the organic layer is smaller than that of the first inorganic layer, and preparing a second inorganic layer on the outer surface of the organic layer to obtain an encapsulation layer on the AMOLED light-emitting layer;
(3) preparing an organic planarization layer on the packaging layer by means of ink-jet printing;
(4) and performing RGB coating on the organic buffer layer to form a color filter layer.
The organic planarization layer is made of acrylic resin, and the thickness of the organic planarization layer is 0.5-1.0 mu m.
The thickness of the first inorganic layer is 500-1000 nm, preferably 500 nm; the material of the first inorganic layer is SiN.
The thickness of the second inorganic layer is 500-1000 nm, preferably 500 nm; the material of the second inorganic layer is SiN.
The thickness of the organic layer is 1-6 μm, preferably 2 μm; the material of the organic layer is acrylic resin or epoxy resin, and acrylic resin is preferred.
The thickness of the AMOLED light emitting layer is 100-300 nm.
The thickness of the color filter layer is 1-4 μm.
In the color filter layer, the color filter layers are arranged in parallel according to the R, G, B sequence, the thickness of the R filter layer is 2.4 μm, the thickness of the G filter layer is 1.6 μm, and the thickness of the B filter layer is 3 μm.
The Micro OLED display produced by the production method in this embodiment includes the following structure:
a substrate 01; an AMOLED light emitting layer 02 over the substrate; an encapsulation layer 03 over the AMOLED light emitting layer; an organic planarization layer 04 over the encapsulation layer; a color filter layer 05 on the organic buffer layer; the encapsulation layer includes a first inorganic layer 031, an organic layer 032 and a second inorganic layer 033, the first inorganic layer 031 is located on the AMOLED light-emitting layer 02, the organic layer 032 is located on the first inorganic layer 031, and the second inorganic layer 033 is located on the outer surface of the organic layer 032 and connected to the first inorganic layer 031 in a sealing manner.
The above detailed description of a Micro OLED display and method for producing the same with reference to the embodiments is illustrative and not restrictive, and several embodiments may be enumerated within the scope of the limitations, so that variations and modifications thereof without departing from the general inventive concept are within the scope of the present invention.
Claims (10)
1. A method for producing a Micro OLED display is characterized by comprising the following steps:
(1) preparing a CMOS driving circuit on a silicon wafer substrate to obtain a substrate, and preparing an AMOLED light emitting layer on the substrate according to a pixel arrangement structure;
(2) preparing a first inorganic layer on the AMOLED light-emitting layer, preparing an organic layer on the first inorganic layer in an ink-jet printing mode, wherein the area of the organic layer is smaller than that of the first inorganic layer, and preparing a second inorganic layer on the outer surface of the organic layer to obtain an encapsulation layer on the AMOLED light-emitting layer;
(3) preparing an organic planarization layer on the packaging layer by means of ink-jet printing;
(4) and performing RGB coating on the organic buffer layer to form a color filter layer.
2. The production method according to claim 1, wherein a material of the organic planarizing layer is an acrylic resin.
3. The production method according to claim 1 or 2, wherein the organic planarizing layer has a thickness of 0.5 to 1.0 μm.
4. The production method according to claim 1 or 2, wherein the thickness of the first inorganic layer is 500 to 1000 nm; the material of the first inorganic layer is SiN.
5. The production method according to claim 1 or 2, wherein the thickness of the second inorganic layer is 500 to 1000 nm; the material of the second inorganic layer is SiN.
6. The production method according to claim 1 or 2, wherein the thickness of the organic layer is 1 to 6 μm; the organic layer is made of acrylic resin or epoxy resin.
7. The production method according to claim 1 or 2, wherein the thickness of the AMOLED light emitting layer is 100-300 nm.
8. The production method according to claim 1 or 2, wherein the color filter layer has a thickness of 1 to 4 μm.
9. The production method according to claim 1 or 2, wherein the color filter layers are arranged in parallel in the order of R, G, B, the thickness of the R filter layer is 2.4 μm, the thickness of the G filter layer is 1.6 μm, and the thickness of the B filter layer is 3 μm.
10. A Micro OLED display produced by the method of any one of claims 1-9, comprising:
a substrate;
an AMOLED light emitting layer located over the substrate;
an encapsulation layer over the AMOLED light emitting layer;
an organic planarization layer over the encapsulation layer;
a color filter layer over the organic buffer layer;
the packaging layer comprises a first inorganic layer, an organic layer and a second inorganic layer, the first inorganic layer is positioned on the AMOLED light-emitting layer, the organic layer is positioned on the first inorganic layer, and the second inorganic layer is arranged on the outer surface of the organic layer and is hermetically connected with the first inorganic layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202110219241.5A CN112802886A (en) | 2021-02-26 | 2021-02-26 | Micro OLED display and production method thereof |
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| CN202110219241.5A CN112802886A (en) | 2021-02-26 | 2021-02-26 | Micro OLED display and production method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113447174A (en) * | 2021-06-25 | 2021-09-28 | 安徽熙泰智能科技有限公司 | Micro OLED laminated packaging structure stress testing method and Micro OLED laminated packaging structure |
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