WO2023060855A1 - Microled three-primary-color light-emitting structure and manufacturing method therefor - Google Patents

Microled three-primary-color light-emitting structure and manufacturing method therefor Download PDF

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WO2023060855A1
WO2023060855A1 PCT/CN2022/086054 CN2022086054W WO2023060855A1 WO 2023060855 A1 WO2023060855 A1 WO 2023060855A1 CN 2022086054 W CN2022086054 W CN 2022086054W WO 2023060855 A1 WO2023060855 A1 WO 2023060855A1
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substrate
layer
electrode
data
film transistor
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PCT/CN2022/086054
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French (fr)
Chinese (zh)
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王国宏
李璟
张逸韵
李志聪
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中国科学院半导体研究所
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates

Definitions

  • the disclosure belongs to the technical field of photoelectric display, and in particular relates to a MicroLED three-primary-color light-emitting structure and a preparation method thereof.
  • the LED technology and market represented by semiconductor lighting are becoming more and more mature, and the full-color display technologies of submillimeter light-emitting diodes (MiniLED) (point pitch 100-500 ⁇ m) and micron light-emitting diodes (MicroLED) (point pitch 5-100 ⁇ m) are widely concerned.
  • MiniLED submillimeter light-emitting diodes
  • MicroLED micron light-emitting diodes
  • LCDs liquid crystal displays
  • OLEDs organic light-emitting semiconductors
  • the size of the light-emitting chip in MiniLED/MicroLED display technology is very small (2-30um), which makes the luminous efficiency problem caused by the miniaturization of the LED chip serious, especially the material defects of the PN junction boundary and interface have the greatest impact on the quaternary compound (AlGaInP) , the luminous efficiency of red LEDs decreases rapidly with the reduction of chip size, and when the size drops below 50 ⁇ m, its peak external quantum efficiency is less than 10%.
  • TFT backplanes are usually used in active-driven Micro LED displays. Because the glass substrate of TFTs is not heat-resistant, high-temperature polysilicon (HTPS) cannot be grown. At present, low-temperature polysilicon (LTPS) technology is often used. Amorphous silicon is converted into polysilicon, and its carrier mobility is about 100cm2/Vs, but the yield is low, the cost is high, and the energy consumption is large, so the quality of polysilicon needs to be further improved.
  • HTPS high-temperature polysilicon
  • LTPS low-temperature polysilicon
  • MicroLED three-primary-color light-emitting structure including:
  • Substrate-free high-temperature polysilicon-thin film transistor structure located on the above display substrate;
  • the substrate-less red OLED structure located on the above display substrate is connected to the above high temperature polysilicon-thin film transistor structure, including an anode and a cathode;
  • the substrate-less green LED structure located on the display substrate is connected to the high-temperature polysilicon-thin film transistor structure, including a P electrode and an N electrode;
  • the substrate-less blue LED structure located on the display substrate is connected to the high-temperature polysilicon-thin film transistor structure, including a P electrode and an N electrode.
  • the substrateless high-temperature polysilicon-thin film transistor structure includes:
  • SiO2/distributed Bragg mirror layer deposited on the aforementioned GaN layer
  • a high temperature polysilicon-thin film transistor layer grown on the aforementioned SiO 2 /distributed Bragg mirror layer.
  • the above-mentioned substrate-free red OLED structure includes:
  • the sealant layer is coated on the cathode metal layer.
  • the substrate-free green LED structure and the substrate-free blue LED structure include:
  • An InGaN layer is grown on the aforementioned GaN layer.
  • MicroLED three-primary-color light-emitting array including:
  • each of the three primary color light-emitting structures of MicroLEDs is electrically connected to the extraction electrode Vdd, the ground electrode GND, the gate electrode V select , the data electrode V data-R , the data electrode V data-G , and the data electrode V data-B ;
  • the lead-out electrode Vdd is connected to the substrateless high-temperature polysilicon-thin film transistor structure; the ground electrode GND is grounded; the gate electrode V select is connected to the anode of the substrateless red OLED structure and the P of the substrateless green LED structure.
  • the above-mentioned gate electrodes V select electrodes of each of the above-mentioned MicroLED three-primary-color light-emitting structures are interconnected to form a scan line of the array;
  • the above-mentioned data electrodes V data-R , data electrodes V data-G and data The electrodes V data-B electrodes are interconnected to form the data lines of the array;
  • the above-mentioned lead-out electrodes Vdd electrodes of each of the above-mentioned MicroLED three-color light-emitting structures are interconnected to form the lead-out lines of the array;
  • the above-mentioned scan lines are connected to the power supply, and the above-mentioned lead-out lines and the above-mentioned data lines are connected to peripheral signals , for image display.
  • Another aspect of the present disclosure provides a method for preparing a MicroLED three-primary-color light-emitting structure.
  • the preparation method is used to prepare the above-mentioned MicroLED three-primary-color light-emitting structure, including:
  • the substrateless high temperature polysilicon-thin film transistor structure, the substrateless red OLED structure, the substrateless green LED structure and the substrateless blue LED structure are arranged on the display substrate.
  • the above-mentioned method for manufacturing a substrate high-temperature polysilicon-thin film transistor structure includes:
  • GaN layer is prepared on sapphire substrate
  • the above-mentioned high-temperature polysilicon-thin film transistor layer, the above-mentioned SiO2 /distributed Bragg reflector layer and the above-mentioned GaN layer on the above-mentioned sapphire substrate are etched layer by layer by an inductively coupled plasma etching process, and etched to the above-mentioned sapphire substrate On top of that, multiple discrete high-temperature polysilicon-thin film transistor structures are formed;
  • the above-mentioned discrete high-temperature polysilicon-thin film transistor structure is irradiated with laser light, and the above-mentioned GaN layer at the interface is decomposed;
  • the above-mentioned high-temperature polysilicon-thin film transistor structure is peeled off from the above-mentioned sapphire substrate by transferring an adhesive film.
  • the above-mentioned method for manufacturing a substrate-free red OLED structure includes:
  • GaN layer is prepared on sapphire substrate
  • the above-mentioned SiO2 layer and the above-mentioned GaN layer on the above-mentioned sapphire substrate are etched layer by layer by an inductively coupled plasma etching process, and etched onto the above-mentioned sapphire substrate to form a plurality of discrete above-mentioned SiO2 layers and the above-mentioned GaN layer mesa;
  • the above-mentioned red light OLED structure is irradiated with laser light, and the above-mentioned GaN layer at the interface is decomposed;
  • the above-mentioned red light OLED structure is peeled off from the above-mentioned sapphire substrate by transferring the adhesive film.
  • the method for manufacturing the substrate-free green LED structure and the substrate-free blue LED structure includes:
  • GaN layer is prepared on sapphire substrate
  • the green LED structure is prepared on the above GaN layer by the flip-chip InGaN LED process;
  • the above-mentioned GaN layer at the interface is decomposed by irradiating the above-mentioned green LED structure and the above-mentioned blue LED structure with laser light;
  • the above-mentioned green LED structure and the above-mentioned blue LED structure are peeled off from the above-mentioned sapphire substrate through the transfer adhesive film.
  • Another aspect of the present disclosure provides a method for preparing a MicroLED three-primary-color light-emitting array.
  • the preparation method is used to prepare the above-mentioned MicroLED three-primary-color light-emitting array, including:
  • each of the three primary color light-emitting structures of MicroLEDs is electrically connected to the extraction electrode Vdd, the ground electrode GND, the gate electrode V select , the data electrode V data-R , the data electrode V data-G , and the data electrode V data-B ;
  • the lead-out electrode Vdd is connected to the substrateless high-temperature polysilicon-thin film transistor structure; the ground electrode GND is grounded; the gate electrode V select is connected to the anode of the substrateless red OLED structure and the P of the substrateless green LED structure.
  • the above-mentioned gate electrodes V select electrodes of each of the above-mentioned MicroLED three-primary-color light-emitting structures are interconnected by metal electrode evaporation and photolithography to form a scan line of the array; the above-mentioned data electrodes V data-R , each of the above-mentioned MicroLED three-primary-color light-emitting structures
  • the data electrodes V data-G and data electrodes V data-B are interconnected to form the data lines of the array;
  • the above-mentioned lead-out electrodes Vdd electrodes of each of the above-mentioned MicroLED three-color light-emitting structures are interconnected to form the lead-out lines of the array; the above-mentioned scanning lines are connected to the power supply, and the above-mentioned lead-out
  • the wire and the above-mentioned data wire are connected to peripheral signals to realize image display.
  • FIG. 1 is a schematic diagram of a MicroLED three-primary-color light-emitting structure according to an embodiment of the present disclosure
  • FIG. 2 is a flow chart of a method for preparing a MicroLED three-primary-color light-emitting structure according to another embodiment of the present disclosure
  • FIG. 3 is a flowchart of a method for preparing a substrate-less high-temperature polysilicon-thin film transistor structure in a MicroLED three-primary-color light-emitting structure according to an embodiment of the present disclosure
  • FIG. 4 is a schematic structural diagram of a high-temperature polysilicon-thin film transistor in a MicroLED three-primary color light-emitting structure according to an embodiment of the present disclosure
  • FIG. 5 is a flow chart of a method for preparing a substrate-less red OLED structure in a MicroLED three-primary-color light-emitting structure according to an embodiment of the disclosure
  • FIG. 6 is a schematic structural diagram of a red OLED in a MicroLED three-primary color light-emitting structure according to an embodiment of the present disclosure
  • FIG. 7 is a schematic structural diagram of a red OLED after etching a sealant in a MicroLED three-primary color light-emitting structure according to an embodiment of the present disclosure
  • FIG. 8 is a flow chart of a method for preparing a substrate-free green LED structure and a substrate-free blue LED structure in a MicroLED three-primary-color light-emitting structure according to an embodiment of the present disclosure
  • FIG. 9 is a flowchart of a method for preparing a MicroLED three-primary-color light-emitting array according to another embodiment of the present disclosure.
  • FIG. 10 is a schematic structural diagram of a MicroLED three-primary-color light-emitting array according to another embodiment of the present disclosure.
  • This disclosure is conceived based on the problems existing in the prior art, combined with the progress of research on red-light OLED materials in recent years, the theoretical internal quantum efficiency of OLED red-light phosphorescent materials can reach 100%, and the luminous efficiency of red-light OLEDs in small sizes is still the same. It can maintain a high level (fewer interface states), so OLED small-size red light has great potential to replace AlGaInP red light LED; the electron mobility of high-temperature polysilicon-thin film transistor can reach 400cm 2 /Vs, which is very important for high-resolution The application of the display screen has greater value.
  • the disclosure provides a MicroLED three-primary-color light-emitting structure and a preparation method thereof, and relates to the technical field of photoelectric display.
  • the light-emitting structure includes: a display substrate; a substrate-free high-temperature polysilicon-thin film transistor structure located on the display substrate; a substrate-free red OLED structure located on the display substrate, connected to the substrate-free high-temperature polysilicon-thin film transistor structure, including anode and Cathode; the substrate-free green LED structure on the display substrate, connected to the substrate-free high-temperature polysilicon-thin film transistor structure, including P electrodes and N electrodes; the substrate-free blue LED structure on the display substrate, connected to the substrate-free High temperature polysilicon-thin film transistor structure connection, including P electrode and N electrode.
  • the present disclosure uses a GaN layer on a sapphire substrate to form a high-temperature polysilicon-thin film transistor structure, a red OLED structure, a green LED structure, and a blue LED structure that can be stripped from the substrate, avoiding the mechanical damage and size limitations caused by the traditional cutting process , can further reduce the chip size; use red OLED structure instead of AlGaInP red LED structure, can improve luminous efficiency, make red luminous efficiency more match with blue and green chips, reduce power consumption, reduce chip area, narrow dot pitch, Improve the resolution of the display screen; use high-temperature polysilicon-thin film transistor structure to drive, can improve carrier mobility; display substrate, substrate-free high-temperature polysilicon-thin-film transistor structure, substrate-free red OLED structure, substrate-free green light The LED structure and the substrate-free blue LED structure form a higher-resolution MicroLED three-color light-emitting structure, which can improve luminous efficiency and reduce energy consumption.
  • FIG. 1 is a schematic diagram of a three-primary-color light-emitting structure of a MicroLED according to an embodiment of the present disclosure.
  • the MicroLED three-primary-color light-emitting structure may include a display substrate 13, a substrate-free high-temperature polysilicon-thin-film transistor structure 9, a substrate-free red OLED structure 10, a substrate-free green LED structure 11, and a substrate-free Blue LED structure12.
  • the substrateless red OLED structure 10 on the display substrate 13 is connected to the substrateless high temperature polysilicon-thin film transistor structure 9, including an anode and a cathode.
  • the substrate-free green LED structure 11 on the display substrate 13 is connected to the substrate-free high-temperature polysilicon-thin film transistor structure 9 and includes a P electrode and an N electrode.
  • the substrateless blue LED structure 12 on the display substrate 13 is connected to the substrateless high temperature polysilicon-thin film transistor structure 9, including P electrodes and N electrodes.
  • FIG. 2 is a flow chart of a method for preparing a MicroLED three-primary-color light-emitting structure according to another embodiment of the present disclosure.
  • the method for preparing the MicroLED three-primary-color light-emitting structure may include steps S201-S205.
  • Step S201 Fabricate a substrate-free high-temperature polysilicon-thin film transistor structure 9 .
  • Step S202 fabricating the substrate-free red OLED structure 10.
  • Step S203 fabricating the substrate-free green LED structure 11.
  • Step S204 fabricating the substrate-less blue LED structure 12.
  • Step S205 disposing the substrateless high temperature polysilicon-thin film transistor structure 9 , the substrateless red OLED structure 10 , the substrateless green LED structure 11 and the substrateless blue LED structure 12 on the display substrate 13 .
  • FIG. 3 is a flowchart of a method for fabricating a substrate-free high-temperature polysilicon-thin film transistor structure in a MicroLED three-primary-color light-emitting structure according to an embodiment of the present disclosure.
  • FIG. 4 is a schematic structural diagram of a high-temperature polysilicon-thin film transistor in a MicroLED three-primary-color light emitting structure according to an embodiment of the present disclosure.
  • the method for preparing the substrate-free high-temperature polysilicon-thin film transistor structure in the MicroLED three-primary-color light-emitting structure may include steps S301-S306.
  • Step S301 On the sapphire substrate 1, grow a GaN layer 2 with a film thickness of 2-7um by metal organic compound chemical vapor deposition (MOCVD).
  • MOCVD metal organic compound chemical vapor deposition
  • the GaN layer 2 can be decomposed by laser, and when the sapphire substrate is subsequently peeled off, the purpose of substrate peeling can be achieved by decomposing the GaN layer 2 by laser.
  • Step S302 Deposit the SiO 2 /distributed Bragg reflector layer 3 on the above-mentioned GaN layer 2 by plasma enhanced chemical vapor deposition (PECVD), with a film thickness of 0.5-2 um.
  • PECVD plasma enhanced chemical vapor deposition
  • the function of SiO 2 is electrical isolation and electrical insulation
  • the function of the distributed Bragg reflector is to eliminate the interference of LED light emission on the TFT.
  • Step S303 grow high-temperature polysilicon 41 on the SiO 2 /distributed Bragg mirror 3 and deposit a metal film layer, and form a thin film transistor 42 through ion implantation, etching, photolithography, etc., and form a 2T1C drive circuit.
  • High Temperature Poly-Silicon referred to as HTPS
  • HTPS is a transmissive LCD driven by an active matrix.
  • Step S304 using an inductively coupled plasma etching process (ICP) to etch the film layer on the sapphire substrate 1 layer by layer, etch onto the sapphire substrate 1, and form a plurality of discrete High temperature polysilicon-thin film transistor structure9.
  • ICP inductively coupled plasma etching process
  • the active driving technology of substrateless high-temperature polysilicon-thin film transistor structure 9 is used to increase the mobility to more than 400 cm 2 /Vs, which can further reduce the size of the driving chip, reduce the pixel pitch of the display screen, and improve the display performance. screen resolution.
  • Step S305 From the other side of the sapphire substrate 1 , irradiate the discrete high-temperature polysilicon-thin film transistor structure 9 with laser light, and the laser passes through the sapphire substrate 1 to decompose the GaN layer 2 .
  • Step S306 removing the high temperature polysilicon-thin film transistor structure 9 by transferring the adhesive film.
  • the substrate-less high-temperature polysilicon-thin film transistor structure 9 is formed through the GaN layer 2 on the sapphire substrate 1, which avoids the mechanical damage and size limitation caused by the traditional cutting process, and can further reduce the size of the driver chip. Reduce the dot pitch of the display and increase the resolution of the display.
  • FIG. 5 is a flow chart of a method for preparing a substrate-less red OLED structure in a MicroLED three-primary-color light-emitting structure according to an embodiment of the disclosure.
  • FIG. 6 is a schematic structural view of a red OLED in a MicroLED three-primary-color light-emitting structure according to an embodiment of the present disclosure.
  • FIG. 7 is a schematic structural view of a red OLED after etching a sealant in a MicroLED three-primary-color light-emitting structure according to an embodiment of the present disclosure.
  • the preparation method of the substrate-less red OLED structure in the MicroLED three-primary-color light emitting structure may include steps S501 to S510.
  • Step S501 On the sapphire substrate 1, a GaN layer 2 is grown on the sapphire substrate 1 by metal organic compound chemical vapor deposition (MOCVD), with a layer thickness of 2-7um.
  • MOCVD metal organic compound chemical vapor deposition
  • the GaN layer 2 can be decomposed by laser, and when the sapphire substrate 1 is subsequently peeled off, the GaN layer 2 can be decomposed by the laser to achieve the purpose of substrate peeling.
  • Step S502 Deposit a SiO 2 layer 3 on the GaN layer 2 with a thickness of 0.5-2 um by using plasma enhanced chemical vapor deposition (PECVD).
  • PECVD plasma enhanced chemical vapor deposition
  • the role of SiO2 is electrical isolation and electrical insulation.
  • Step S503 Etching the GaN layer 2 and the SiO 2 layer 3 on the sapphire substrate 1 by using an inductively coupled plasma etching process (ICP), etching them onto the sapphire substrate 1, and forming on the sapphire substrate 1 multiple separate structures.
  • ICP inductively coupled plasma etching process
  • Step S504 Deposit a transparent electrode layer 5 (ITO) on the above-mentioned substrate with a film thickness of 0.1um-0.5um, and perform photolithography and etching process on it, so that the above-mentioned discrete structure is attached with a transparent electrode layer 5 (ITO), and the transparent electrode Layer 5 (ITO) acts as the anode for the red OLED structure.
  • ITO transparent electrode layer 5
  • Step S505 sending the above substrate into the OLED material evaporation system to deposit the organic functional layer 6 using a mask.
  • Step S506 Send the above substrate into the OLED material evaporation system to deposit the cathode metal layer 7 using a mask to form multiple discrete red OLED structures.
  • the AlGaInP red LED structure is replaced by the red OLED structure prepared by the phosphorescent material, and the luminous efficiency of the red microchip structure is further improved. More matching, lower power consumption, smaller chip area, further narrow dot pitch, and higher display resolution.
  • Step S507 The above-mentioned substrate is passed into a glove box filled with 99.99% pure nitrogen for coating process of the sealant 8, and the substrate is passed out of the glove box after the sealant 8 is cured.
  • Step S508 performing an etching process on the sealant on the above-mentioned substrate, so that the encapsulant only protects the discrete red OLED structure, and exposes two ITO electrodes, serving as the anode and cathode of the red OLED microchip respectively.
  • Step S509 From the other side of the sapphire substrate 1 , laser light is used to irradiate the red light OLED structure of the above substrate, and the laser passes through the sapphire substrate to decompose the GaN layer 2 .
  • Step S510 removing the red OLED structure 10 from the sapphire substrate by transferring the adhesive film to form the red OLED structure 10 with a GaN epitaxial layer support.
  • the substrate-less red OLED structure 10 is formed by the GaN layer 2 on the sapphire substrate 1, which avoids the mechanical damage and size limitation caused by the traditional cutting process, and can further reduce the size of the driving chip and reduce the size of the display. Screen dot pitch, improve display resolution.
  • FIG. 8 is a flow chart of a method for preparing a substrate-free green LED structure and a substrate-free blue LED structure in a MicroLED three-primary-color light-emitting structure according to an embodiment of the present disclosure.
  • the method for preparing the substrate-free green LED structure and the substrate-free blue LED structure in the MicroLED three-primary-color light-emitting structure may include steps S801-S804.
  • Step S801 On the sapphire substrate 1, a GaN layer 2 is grown on the sapphire substrate 1 with a metal organic chemical vapor deposition (MOCVD) process, with a layer thickness of 2-7um.
  • MOCVD metal organic chemical vapor deposition
  • the GaN layer 2 can be decomposed by laser, and when the sapphire substrate 1 is subsequently peeled off, the GaN layer 2 can be decomposed by laser to achieve the purpose of substrate peeling.
  • Step S802 Prepare a green LED structure and a blue LED structure on the sapphire substrate 1 by using a flip-chip InGaN LED process.
  • Step S803 From the other side of the sapphire substrate 1, irradiate the green LED structure and the blue LED structure of the above substrate with laser light, and the laser passes through the sapphire substrate to decompose the GaN layer 2 at the cross section.
  • Step S804 Remove the substrate-free green LED structure 11 and the substrate-free blue LED structure 12 by transferring the adhesive film.
  • the substrate-less green LED structure 11 and the substrate-free blue LED structure 12 are formed through the GaN layer 2 on the sapphire substrate, which avoids the mechanical damage and size limitation caused by the traditional cutting process, and can Further reduce the size of the driver chip, reduce the dot pitch of the display screen, and increase the resolution of the display screen.
  • FIG. 9 is a flow chart of a method for manufacturing a MicroLED three-primary-color light-emitting array according to another embodiment of the present disclosure.
  • FIG. 10 is a schematic structural diagram of a MicroLED three-primary-color light-emitting array according to another embodiment of the present disclosure.
  • the preparation method of the MicroLED three-primary-color light-emitting array may include steps S901-S902.
  • Step S901 On the display substrate 13, sequentially transfer the substrate-free high-temperature polysilicon-thin film transistor structure 9, the substrate-free red OLED structure 10, the substrate-free green LED microchip 11 and the substrate-free blue LED microchip 12, Arranged according to the set positions to form a MicroLED three-primary-color light-emitting structure, the substrate-free high-temperature polysilicon-thin film transistor structure 9 drives the substrate-free red OLED structure 10, the substrate-less green LED microchip 11 and the substrate-free blue LED microchip 12 , through metal evaporation, photolithography and other electrode interconnection processes to form six electrode lead-out electrodes, which are Vdd electrode, GND ground electrode, V select gate electrode and V data-R , V data-G , V data-B data An electrode, and a plurality of light emitting structures are arranged in a matrix form.
  • Step S902 Perform electrode interconnection processes such as metal evaporation and photolithography on the six lead-out electrodes of each light-emitting structure on the entire screen to form scan lines, data lines, and electrode lead-out lines for the entire screen, and lead them to the edge of the display array. Connect peripheral signals and power to realize image display.
  • each light-emitting structure has been tested and screened before the screen is assembled, and the entire screen has fewer dead pixels, fewer defects, high quality, and repair-free ,low cost.

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Abstract

The present application relates to the technical field of optoelectronic display, and provides a MicroLED three-primary-color light-emitting structure and a manufacturing method therefor. The light-emitting structure comprises: a display substrate; a substrate-free high-temperature polycrystalline silicon-thin film transistor structure located on the display substrate; a substrate-free red light OLED structure located on the display substrate, and connected to the substrate-free high-temperature polycrystalline silicon-thin film transistor structure; a substrate-free green light LED structure located on the display substrate, and connected to the substrate-free high-temperature polycrystalline silicon-thin film transistor structure; and a substrate-free blue light LED structure located on the display substrate, and connected to the substrate-free high-temperature polycrystalline silicon-thin film transistor structure. According to the MicroLED three-primary-color light-emitting structure disclosed by the present application, energy consumption can be reduced; an AlGaInP red light LED structure is replaced with a substrate-free red light OLED structure, and thus, the light-emitting efficiency can be improved; the substrate-free high-temperature polycrystalline silicon-thin film transistor structure is used for driving, and thus, the carrier mobility can be improved.

Description

MicroLED三基色发光结构及其制备方法Micro LED three-primary-color light-emitting structure and its preparation method 技术领域technical field
本公开属于光电显示技术领域，具体涉及一种MicroLED三基色发光结构及其制备方法。The disclosure belongs to the technical field of photoelectric display, and in particular relates to a MicroLED three-primary-color light-emitting structure and a preparation method thereof.
背景技术Background technique
以半导体照明为代表的LED技术和市场日臻成熟，次毫米发光二极管(MiniLED)(点距100-500μm)和微米发光二极管(MicroLED)(点距5-100μm)的全彩显示技术被广泛关注，成为高清TV、增强现实/虚拟现实(AR/VR)、可穿戴柔性电子等领域重要发展点技术，以其自发光、高对比度、宽色域、高响应度、超低能耗、高亮度及长寿命等优势将带来液晶显示器(LCD)和有机发光半导体(OLED)之后显示技术的又一次革命。The LED technology and market represented by semiconductor lighting are becoming more and more mature, and the full-color display technologies of submillimeter light-emitting diodes (MiniLED) (point pitch 100-500μm) and micron light-emitting diodes (MicroLED) (point pitch 5-100μm) are widely concerned. It has become an important development point technology in the fields of high-definition TV, augmented reality/virtual reality (AR/VR), wearable flexible electronics, etc., with its self-illumination, high contrast, wide color gamut, high response, ultra-low energy consumption, high Advantages such as longevity will bring another revolution in display technology after liquid crystal displays (LCDs) and organic light-emitting semiconductors (OLEDs).
MiniLED/MicroLED显示技术中的发光芯片尺寸非常小(2-30um)，使得LED芯片小型化带来的发光效率问题严重，特别是PN结边界和界面的材料缺陷对四元化合物(AlGaInP)影响最大，红光LED的发光效率随着芯片尺寸的减小而迅速下降，当尺寸下降到50μm以下时，其峰值外量子效率不足10％。The size of the light-emitting chip in MiniLED/MicroLED display technology is very small (2-30um), which makes the luminous efficiency problem caused by the miniaturization of the LED chip serious, especially the material defects of the PN junction boundary and interface have the greatest impact on the quaternary compound (AlGaInP) , the luminous efficiency of red LEDs decreases rapidly with the reduction of chip size, and when the size drops below 50 μm, its peak external quantum efficiency is less than 10%.
有源驱动MicroLED显示中通常采用薄膜晶体管(TFT)背板，由于TFT的玻璃基板不耐热导致无法高温生长多晶硅(HTPS)，目前常采用低温多晶硅(LTPS)技术，使用激光退火把低温生长的非晶硅转化为多晶硅，其载流子迁移率在100cm2/Vs左右，但成品率低，成本高，能耗较大，有待进一步提高多晶硅的质量。Thin-film transistor (TFT) backplanes are usually used in active-driven Micro LED displays. Because the glass substrate of TFTs is not heat-resistant, high-temperature polysilicon (HTPS) cannot be grown. At present, low-temperature polysilicon (LTPS) technology is often used. Amorphous silicon is converted into polysilicon, and its carrier mobility is about 100cm2/Vs, but the yield is low, the cost is high, and the energy consumption is large, so the quality of polysilicon needs to be further improved.
发明内容Contents of the invention
本公开的一个方面提供了一种MicroLED三基色发光结构，包括：One aspect of the present disclosure provides a MicroLED three-primary-color light-emitting structure, including:
显示基板；display substrate;
位于上述显示基板上的无衬底高温多晶硅-薄膜晶体管结构；Substrate-free high-temperature polysilicon-thin film transistor structure located on the above display substrate;
位于上述显示基板上的无衬底红光OLED结构，与上述高温多晶硅-薄膜晶体管结构连接，包括阳极与阴极；The substrate-less red OLED structure located on the above display substrate is connected to the above high temperature polysilicon-thin film transistor structure, including an anode and a cathode;
位于上述显示基板上的无衬底绿光LED结构，与上述高温多晶硅-薄膜晶体管结构连接，包括P电极与N电极；The substrate-less green LED structure located on the display substrate is connected to the high-temperature polysilicon-thin film transistor structure, including a P electrode and an N electrode;
位于上述显示基板上的无衬底蓝光LED结构，与上述高温多晶硅-薄膜晶体管结构连接，包括P电极与N电极。The substrate-less blue LED structure located on the display substrate is connected to the high-temperature polysilicon-thin film transistor structure, including a P electrode and an N electrode.
可选地，上述无衬底高温多晶硅-薄膜晶体管结构包括：Optionally, the substrateless high-temperature polysilicon-thin film transistor structure includes:
GaN层；GaN layer;
SiO2/分布式布拉格反射镜层，淀积在上述GaN层上；SiO2/distributed Bragg mirror layer, deposited on the aforementioned GaN layer;
高温多晶硅-薄膜晶体管层，生长在上述SiO 2/分布式布拉格反射镜层上。 A high temperature polysilicon-thin film transistor layer, grown on the aforementioned SiO 2 /distributed Bragg mirror layer.
可选地，上述无衬底红光OLED结构包括：Optionally, the above-mentioned substrate-free red OLED structure includes:
GaN层；GaN layer;
SiO2层，淀积在上述GaN层上；a SiO2 layer deposited on the aforementioned GaN layer;
透明电极层，淀积在上述SiO 2层上； a transparent electrode layer, deposited on the aforementioned SiO2 layer;
有机功能层，淀积在上述透明电极层上；an organic functional layer deposited on the transparent electrode layer;
阴极金属层，淀积在上述有机功能层上；a cathode metal layer deposited on the organic functional layer;
密封胶层，涂敷在上述阴极金属层上。The sealant layer is coated on the cathode metal layer.
可选地，上述无衬底绿光LED结构和上述无衬底蓝光LED结构包括：Optionally, the substrate-free green LED structure and the substrate-free blue LED structure include:
GaN层；GaN layer;
InGaN层，生长在上述GaN层上。An InGaN layer is grown on the aforementioned GaN layer.
本公开的另一方面提供了一种MicroLED三基色发光阵列，包括：Another aspect of the present disclosure provides a MicroLED three-primary-color light-emitting array, including:
排列为矩阵的多个如上上述的MicroLED三基色发光结构；A plurality of the above-mentioned MicroLED three-primary-color light-emitting structures arranged in a matrix;
其中，每个上述MicroLED三基色发光结构各自与引出电极Vdd、接地电极GND、选通电极V select、数据电极V data-R、数据电极V data-G以及数据电极V data-B电连接；上述引出电极Vdd连接上述无衬底高温多晶硅-薄膜晶体管结构；上述接地电极GND接地；上述选通电极V select连接至上述无衬底红光OLED结构的阳极、上述无衬底绿光LED结构的P电极与上述无衬底蓝光LED结构的P电极； Wherein, each of the three primary color light-emitting structures of MicroLEDs is electrically connected to the extraction electrode Vdd, the ground electrode GND, the gate electrode V select , the data electrode V data-R , the data electrode V data-G , and the data electrode V data-B ; The lead-out electrode Vdd is connected to the substrateless high-temperature polysilicon-thin film transistor structure; the ground electrode GND is grounded; the gate electrode V select is connected to the anode of the substrateless red OLED structure and the P of the substrateless green LED structure. The electrode and the P electrode of the above substrate-less blue LED structure;
其中，每个上述MicroLED三基色发光结构的上述选通电极V select电极互联形成阵列的扫描线；每个上述MicroLED三基色发光结构的上述数据电极V data-R、数据电极V data-G以及数据电极V data-B电极互联形成阵列的数据线；每个上述MicroLED三基色发光结构的上述引出电极Vdd电极互联形成阵列的引出线；上述扫描线连接电源，上述引出线和上述数据线连接***信号，用以实现图像显示。 Wherein, the above-mentioned gate electrodes V select electrodes of each of the above-mentioned MicroLED three-primary-color light-emitting structures are interconnected to form a scan line of the array; the above-mentioned data electrodes V data-R , data electrodes V data-G and data The electrodes V data-B electrodes are interconnected to form the data lines of the array; the above-mentioned lead-out electrodes Vdd electrodes of each of the above-mentioned MicroLED three-color light-emitting structures are interconnected to form the lead-out lines of the array; the above-mentioned scan lines are connected to the power supply, and the above-mentioned lead-out lines and the above-mentioned data lines are connected to peripheral signals , for image display.
本公开的另一方面提供了一种MicroLED三基色发光结构的制备方法的制备方法，该制备方法用于制备上述的MicroLED三基色发光结构，包括：Another aspect of the present disclosure provides a method for preparing a MicroLED three-primary-color light-emitting structure. The preparation method is used to prepare the above-mentioned MicroLED three-primary-color light-emitting structure, including:
制作上述无衬底高温多晶硅-薄膜晶体管结构；Fabricate the substrate-free high-temperature polysilicon-thin film transistor structure;
制作上述无衬底红光OLED结构；Fabricate the above-mentioned substrate-free red light OLED structure;
制作上述无衬底绿光LED结构；Making the above-mentioned substrate-free green LED structure;
制作上述无衬底蓝光LED结构；Making the above-mentioned substrate-free blue LED structure;
将上述无衬底高温多晶硅-薄膜晶体管结构、上述无衬底红光OLED结构、上述无衬底绿光LED结构以及上述无衬底蓝光LED结构设置在上述显示基板上。The substrateless high temperature polysilicon-thin film transistor structure, the substrateless red OLED structure, the substrateless green LED structure and the substrateless blue LED structure are arranged on the display substrate.
可选地，上述制作衬底高温多晶硅-薄膜晶体管结构的方法包括：Optionally, the above-mentioned method for manufacturing a substrate high-temperature polysilicon-thin film transistor structure includes:
在蓝宝石衬底上制备GaN层；GaN layer is prepared on sapphire substrate;
在上述GaN层上淀积SiO 2/分布式布拉格反射镜层； Depositing a SiO 2 /distributed Bragg reflector layer on the above GaN layer;
在上述SiO 2/分布式布拉格反射镜层上制备高温多晶硅-薄膜晶体管层； Preparing a high-temperature polysilicon-thin film transistor layer on the above-mentioned SiO 2 /distributed Bragg reflector layer;
通过电感耦合等离子体刻蚀工艺对上述蓝宝石衬底上的上述高温多晶硅-薄膜晶体管层、上述SiO 2/分布式布拉格反射镜层和上述GaN层进行逐层刻蚀，刻蚀到上述蓝宝石衬底之上，形成多个分立的高温多晶硅-薄膜晶体管结构； The above-mentioned high-temperature polysilicon-thin film transistor layer, the above-mentioned SiO2 /distributed Bragg reflector layer and the above-mentioned GaN layer on the above-mentioned sapphire substrate are etched layer by layer by an inductively coupled plasma etching process, and etched to the above-mentioned sapphire substrate On top of that, multiple discrete high-temperature polysilicon-thin film transistor structures are formed;
从上述蓝宝石衬底的另一面，通过激光照射上述分立的高温多晶硅-薄膜晶体管结构，将界面处的上述GaN层分解；From the other side of the above-mentioned sapphire substrate, the above-mentioned discrete high-temperature polysilicon-thin film transistor structure is irradiated with laser light, and the above-mentioned GaN layer at the interface is decomposed;
通过转移胶膜将上述高温多晶硅-薄膜晶体管结构从上述蓝宝石衬底上剥离下来。The above-mentioned high-temperature polysilicon-thin film transistor structure is peeled off from the above-mentioned sapphire substrate by transferring an adhesive film.
可选地，上述制作无衬底红光OLED结构的方法包括：Optionally, the above-mentioned method for manufacturing a substrate-free red OLED structure includes:
在蓝宝石衬底上制备GaN层；GaN layer is prepared on sapphire substrate;
在上述GaN层上淀积SiO 2层； Depositing a SiO2 layer on the aforementioned GaN layer;
通过电感耦合等离子体刻蚀工艺对上述蓝宝石衬底上的上述SiO 2层和上述GaN层进行逐层刻蚀，刻蚀到上述蓝宝石衬底之上，形成多个分立的上述SiO 2层和上述GaN层台面； The above-mentioned SiO2 layer and the above-mentioned GaN layer on the above-mentioned sapphire substrate are etched layer by layer by an inductively coupled plasma etching process, and etched onto the above-mentioned sapphire substrate to form a plurality of discrete above-mentioned SiO2 layers and the above-mentioned GaN layer mesa;
在上述分立的上述SiO 2层和上述GaN层台面上淀积透明电极层，通过光刻腐蚀工艺得到在上述分立的上述SiO 2层和上述GaN层台面上附着有透明电极层的基片； Deposit a transparent electrode layer on the above-mentioned discrete above-mentioned SiO 2 layer and the above-mentioned GaN layer mesa, and obtain a substrate with a transparent electrode layer attached to the above-mentioned discrete above-mentioned SiO 2 layer and the above-mentioned GaN layer mesa through a photolithography etching process;
通过OLED材料蒸镀***在上述基片的上述透明电极层上淀积有机功能层；Depositing an organic functional layer on the above-mentioned transparent electrode layer of the above-mentioned substrate through an OLED material evaporation system;
通过OLED材料蒸镀***在上述基片的上述有机功能层上淀积阴极金属层；Depositing a cathode metal layer on the above-mentioned organic functional layer of the above-mentioned substrate through an OLED material evaporation system;
通过手套箱对淀积后的基片进行密封胶涂敷，得到固化后的基片；Apply a sealant to the deposited substrate through a glove box to obtain a cured substrate;
对上述固化后的基片上的密封胶进行刻蚀，得到分立的红光OLED结构，并且露出两个电极，上述两个电极为红光OLED结构的上述阳极和上述阴极；Etching the sealant on the above-mentioned cured substrate to obtain a discrete red light OLED structure, and exposing two electrodes, the above two electrodes are the above-mentioned anode and the above-mentioned cathode of the red light OLED structure;
从上述蓝宝石衬底的另一面，通过激光照射上述红光OLED结构，将界面处的上述GaN层分解；From the other side of the above-mentioned sapphire substrate, the above-mentioned red light OLED structure is irradiated with laser light, and the above-mentioned GaN layer at the interface is decomposed;
通过转移胶膜将上述红光OLED结构从上述蓝宝石衬底上剥离下来。The above-mentioned red light OLED structure is peeled off from the above-mentioned sapphire substrate by transferring the adhesive film.
可选地，上述制作无衬底绿光LED结构和上述无衬底蓝光LED结构的方法包括：Optionally, the method for manufacturing the substrate-free green LED structure and the substrate-free blue LED structure includes:
在蓝宝石衬底上制备GaN层；GaN layer is prepared on sapphire substrate;
通过倒装结构InGaN LED工艺在上述GaN层上制备绿光LED结构；The green LED structure is prepared on the above GaN layer by the flip-chip InGaN LED process;
通过倒装结构InGaN LED工艺在上述GaN层上制备蓝光LED结构；Prepare a blue LED structure on the above GaN layer by flip-chip InGaN LED process;
从上述蓝宝石衬底的另一面，通过激光照射上述绿光LED结构和上述蓝光LED结构，将界面处的上述GaN层分解；From the other side of the above-mentioned sapphire substrate, the above-mentioned GaN layer at the interface is decomposed by irradiating the above-mentioned green LED structure and the above-mentioned blue LED structure with laser light;
通过转移胶膜将上述绿光LED结构和上述蓝光LED结构从上述蓝宝石衬底上剥离下来。The above-mentioned green LED structure and the above-mentioned blue LED structure are peeled off from the above-mentioned sapphire substrate through the transfer adhesive film.
本公开的另一方面提供了一种MicroLED三基色发光阵列的制备方法，该制备方法用于制备上述的MicroLED三基色发光阵列，包括：Another aspect of the present disclosure provides a method for preparing a MicroLED three-primary-color light-emitting array. The preparation method is used to prepare the above-mentioned MicroLED three-primary-color light-emitting array, including:
将多个如上上述的发光结构的制备方法制备得到的MicroLED三基色发光结构按照矩阵形式排列；Arranging a plurality of MicroLED three-primary-color light-emitting structures prepared by the method for preparing the above-mentioned light-emitting structures in a matrix form;
其中，每个上述MicroLED三基色发光结构各自与引出电极Vdd、接地电极GND、选通电极V select、数据电极V data-R、数据电极V data-G以及数据电极V data-B电连接；上述引出电极Vdd连接上述无衬底高温多晶硅-薄膜晶体管结构；上述接地电极GND接地；上述选通电极V select连接至上述无衬底红光OLED结构的阳极、上述无衬底绿光LED结构的P电极与上述无衬底蓝光LED结构的P电极； Wherein, each of the three primary color light-emitting structures of MicroLEDs is electrically connected to the extraction electrode Vdd, the ground electrode GND, the gate electrode V select , the data electrode V data-R , the data electrode V data-G , and the data electrode V data-B ; The lead-out electrode Vdd is connected to the substrateless high-temperature polysilicon-thin film transistor structure; the ground electrode GND is grounded; the gate electrode V select is connected to the anode of the substrateless red OLED structure and the P of the substrateless green LED structure. The electrode and the P electrode of the above substrate-less blue LED structure;
通过金属电极蒸镀和光刻腐蚀将每个上述MicroLED三基色发光结构的上述选通电极V select电极互联形成阵列的扫描线；每个上述MicroLED三基色发光结构的上述数据电极V data-R、数据电极V data-G以及数据电极V data-B电极互联形成阵列的数据线；每个上述MicroLED三基色发光结构的上述引出电极Vdd电极互联形成阵列的引出线；上述扫描线连接电源，上述引出线和上述数据线连接***信号，用以实现图像显示。 The above-mentioned gate electrodes V select electrodes of each of the above-mentioned MicroLED three-primary-color light-emitting structures are interconnected by metal electrode evaporation and photolithography to form a scan line of the array; the above-mentioned data electrodes V data-R , each of the above-mentioned MicroLED three-primary-color light-emitting structures The data electrodes V data-G and data electrodes V data-B are interconnected to form the data lines of the array; the above-mentioned lead-out electrodes Vdd electrodes of each of the above-mentioned MicroLED three-color light-emitting structures are interconnected to form the lead-out lines of the array; the above-mentioned scanning lines are connected to the power supply, and the above-mentioned lead-out The wire and the above-mentioned data wire are connected to peripheral signals to realize image display.
附图说明Description of drawings
图1为根据本公开实施例的MicroLED三基色发光结构的示意图；FIG. 1 is a schematic diagram of a MicroLED three-primary-color light-emitting structure according to an embodiment of the present disclosure;
图2为根据本公开另一实施例的MicroLED三基色发光结构的制备方法流程图；2 is a flow chart of a method for preparing a MicroLED three-primary-color light-emitting structure according to another embodiment of the present disclosure;
图3为根据本公开实施例的MicroLED三基色发光结构中无衬底高温多晶硅-薄膜晶体管结构的制备方法流程图；3 is a flowchart of a method for preparing a substrate-less high-temperature polysilicon-thin film transistor structure in a MicroLED three-primary-color light-emitting structure according to an embodiment of the present disclosure;
图4为根据本公开实施例的MicroLED三基色发光结构中的高温多晶硅-薄膜晶体管结构示意图；4 is a schematic structural diagram of a high-temperature polysilicon-thin film transistor in a MicroLED three-primary color light-emitting structure according to an embodiment of the present disclosure;
图5为根据本公开实施例的MicroLED三基色发光结构中无衬底红光OLED结构的制备方法流程图；5 is a flow chart of a method for preparing a substrate-less red OLED structure in a MicroLED three-primary-color light-emitting structure according to an embodiment of the disclosure;
图6为根据本公开实施例的MicroLED三基色发光结构中的红光OLED的结构示意图；6 is a schematic structural diagram of a red OLED in a MicroLED three-primary color light-emitting structure according to an embodiment of the present disclosure;
图7为根据本公开实施例的MicroLED三基色发光结构中的刻蚀密封胶后红光OLED的结构示意图；7 is a schematic structural diagram of a red OLED after etching a sealant in a MicroLED three-primary color light-emitting structure according to an embodiment of the present disclosure;
图8为根据本公开实施例的MicroLED三基色发光结构中无衬底绿光LED结构和无衬底 蓝光LED结构的制备方法流程图；8 is a flow chart of a method for preparing a substrate-free green LED structure and a substrate-free blue LED structure in a MicroLED three-primary-color light-emitting structure according to an embodiment of the present disclosure;
图9为根据本公开另一实施例的MicroLED三基色发光阵列的制备方法流程图；FIG. 9 is a flowchart of a method for preparing a MicroLED three-primary-color light-emitting array according to another embodiment of the present disclosure;
图10为根据本公开另一实施例的MicroLED三基色发光阵列的结构示意图；FIG. 10 is a schematic structural diagram of a MicroLED three-primary-color light-emitting array according to another embodiment of the present disclosure;
附图标记：Reference signs:
1、蓝宝石衬底，2、GaN，3、SiO 2/分布式布拉格反射镜，41、高温多晶硅，42、薄膜晶体管，5、透明电极层，6、有机功能层，7、阴极金属层，8、密封胶，9、无衬底高温多晶硅-薄膜晶体管结构，10、无衬底红光OLED结构，11、无衬底绿光LED结构，12、无衬底蓝光LED结构，13、显示基板。 1. Sapphire substrate, 2. GaN, 3. SiO 2 /distributed Bragg mirror, 41. High temperature polysilicon, 42. Thin film transistor, 5. Transparent electrode layer, 6. Organic functional layer, 7. Cathode metal layer, 8 , Sealant, 9. Substrate-free high-temperature polysilicon-thin film transistor structure, 10. Substrate-free red OLED structure, 11. Substrate-free green LED structure, 12. Substrate-free blue LED structure, 13. Display substrate.
具体实施方式Detailed ways
下面结合附图对本公开的实施方式作进一步说明。Embodiments of the present disclosure will be further described below in conjunction with the accompanying drawings.
在以下描述中阐述了具体细节以便于充分理解本公开，但是本公开能够以多种不同于在此描述的其它方式来实施，本领域技术人员可以在不违背本公开内涵的情况下做类似推广。因此本公开不受下面提供的具体实施的限制。Specific details are set forth in the following description in order to fully understand the present disclosure, but the present disclosure can be implemented in many other ways that are different from those described here, and those skilled in the art can make similar promotions without violating the connotation of the present disclosure . The present disclosure is therefore not limited by the specific implementations provided below.
本公开构思为基于现有技术存在的问题，结合近年来红光OLED材料研究的进展，OLED红光磷光材料理论上内量子效率可达到100％，并且红光OLED在小尺寸下的发光效率仍能维持较高水平(界面态较少)，所以OLED小尺寸红光替代AlGaInP红光LED具有很大的潜力；采用高温多晶硅-薄膜晶体管的电子迁移率可以达到400cm 2/Vs，对高分辨率显示屏的应用具有更大的价值。 This disclosure is conceived based on the problems existing in the prior art, combined with the progress of research on red-light OLED materials in recent years, the theoretical internal quantum efficiency of OLED red-light phosphorescent materials can reach 100%, and the luminous efficiency of red-light OLEDs in small sizes is still the same. It can maintain a high level (fewer interface states), so OLED small-size red light has great potential to replace AlGaInP red light LED; the electron mobility of high-temperature polysilicon-thin film transistor can reach 400cm 2 /Vs, which is very important for high-resolution The application of the display screen has greater value.
本公开提供了一种MicroLED三基色发光结构及其制备方法，涉及光电显示技术领域。发光结构包括：显示基板；位于显示基板上的无衬底高温多晶硅-薄膜晶体管结构；位于显示基板上的无衬底红光OLED结构，与无衬底高温多晶硅-薄膜晶体管结构连接，包括阳极与阴极；位于显示基板上的无衬底绿光LED结构，与无衬底高温多晶硅-薄膜晶体管结构连接，包括P电极与N电极；位于显示基板上的无衬底蓝光LED结构，与无衬底高温多晶硅-薄膜晶体管结构连接，包括P电极与N电极。本公开通过蓝宝石衬底上的GaN层形成可剥离衬底的高温多晶硅-薄膜晶体管结构、红光OLED结构、绿光LED结构和蓝光LED结构，避免了传统切割工艺带来的机械损伤和尺寸限制，可以进一步缩小芯片尺寸；利用红光OLED结构代替AlGaInP红光LED结构，可以提高发光效率，使红光发光效率与蓝、绿芯片更匹配，降低功耗、减小芯片面积、缩小点间距，提高显示屏分辨率；利用高温多晶硅-薄膜晶体管结构驱动，可以提高载流子迁移率；由显示基板、无衬底高温多晶硅-薄膜晶体管结构、无衬底红光OLED结构、无衬底绿光LED结构以及无衬底蓝光LED结构组成更高分辨率的 MicroLED三基色发光结构，可以提高发光效率，降低能耗。The disclosure provides a MicroLED three-primary-color light-emitting structure and a preparation method thereof, and relates to the technical field of photoelectric display. The light-emitting structure includes: a display substrate; a substrate-free high-temperature polysilicon-thin film transistor structure located on the display substrate; a substrate-free red OLED structure located on the display substrate, connected to the substrate-free high-temperature polysilicon-thin film transistor structure, including anode and Cathode; the substrate-free green LED structure on the display substrate, connected to the substrate-free high-temperature polysilicon-thin film transistor structure, including P electrodes and N electrodes; the substrate-free blue LED structure on the display substrate, connected to the substrate-free High temperature polysilicon-thin film transistor structure connection, including P electrode and N electrode. The present disclosure uses a GaN layer on a sapphire substrate to form a high-temperature polysilicon-thin film transistor structure, a red OLED structure, a green LED structure, and a blue LED structure that can be stripped from the substrate, avoiding the mechanical damage and size limitations caused by the traditional cutting process , can further reduce the chip size; use red OLED structure instead of AlGaInP red LED structure, can improve luminous efficiency, make red luminous efficiency more match with blue and green chips, reduce power consumption, reduce chip area, narrow dot pitch, Improve the resolution of the display screen; use high-temperature polysilicon-thin film transistor structure to drive, can improve carrier mobility; display substrate, substrate-free high-temperature polysilicon-thin-film transistor structure, substrate-free red OLED structure, substrate-free green light The LED structure and the substrate-free blue LED structure form a higher-resolution MicroLED three-color light-emitting structure, which can improve luminous efficiency and reduce energy consumption.
图1为根据本公开实施例的MicroLED三基色发光结构的示意图。FIG. 1 is a schematic diagram of a three-primary-color light-emitting structure of a MicroLED according to an embodiment of the present disclosure.
如图1所示，该MicroLED三基色发光结构可以包括显示基板13、无衬底高温多晶硅-薄膜晶体管结构9、无衬底红光OLED结构10、无衬底绿光LED结构11和无衬底蓝光LED结构12。As shown in Figure 1, the MicroLED three-primary-color light-emitting structure may include a display substrate 13, a substrate-free high-temperature polysilicon-thin-film transistor structure 9, a substrate-free red OLED structure 10, a substrate-free green LED structure 11, and a substrate-free Blue LED structure12.
其中，位于显示基板13上的无衬底高温多晶硅-薄膜晶体管结构9。Among them, the substrate-less high-temperature polysilicon-thin film transistor structure 9 located on the display substrate 13 .
位于显示基板13上的无衬底红光OLED结构10，与无衬底高温多晶硅-薄膜晶体管结构9连接，包括阳极与阴极。The substrateless red OLED structure 10 on the display substrate 13 is connected to the substrateless high temperature polysilicon-thin film transistor structure 9, including an anode and a cathode.
位于显示基板13上的无衬底绿光LED结构11，与无衬底高温多晶硅-薄膜晶体管结构9连接，包括P电极与N电极。The substrate-free green LED structure 11 on the display substrate 13 is connected to the substrate-free high-temperature polysilicon-thin film transistor structure 9 and includes a P electrode and an N electrode.
位于显示基板13上的无衬底蓝光LED结构12，与无衬底高温多晶硅-薄膜晶体管结构9连接，包括P电极与N电极。The substrateless blue LED structure 12 on the display substrate 13 is connected to the substrateless high temperature polysilicon-thin film transistor structure 9, including P electrodes and N electrodes.
图2为根据本公开另一实施例的MicroLED三基色发光结构的制备方法流程图。FIG. 2 is a flow chart of a method for preparing a MicroLED three-primary-color light-emitting structure according to another embodiment of the present disclosure.
如图2所示，该MicroLED三基色发光结构的制备方法可以包括步骤S201～S205。As shown in FIG. 2 , the method for preparing the MicroLED three-primary-color light-emitting structure may include steps S201-S205.
步骤S201：制作无衬底高温多晶硅-薄膜晶体管结构9。Step S201 : Fabricate a substrate-free high-temperature polysilicon-thin film transistor structure 9 .
步骤S202：制作无衬底红光OLED结构10。Step S202: fabricating the substrate-free red OLED structure 10.
步骤S203：制作无衬底绿光LED结构11。Step S203: fabricating the substrate-free green LED structure 11.
步骤S204：制作无衬底蓝光LED结构12。Step S204: fabricating the substrate-less blue LED structure 12.
步骤S205：将无衬底高温多晶硅-薄膜晶体管结构9、无衬底红光OLED结构10、无衬底绿光LED结构11以及无衬底蓝光LED结构12设置在显示基板13上。Step S205 : disposing the substrateless high temperature polysilicon-thin film transistor structure 9 , the substrateless red OLED structure 10 , the substrateless green LED structure 11 and the substrateless blue LED structure 12 on the display substrate 13 .
图3为根据本公开实施例的MicroLED三基色发光结构中无衬底高温多晶硅-薄膜晶体管结构的制备方法流程图。FIG. 3 is a flowchart of a method for fabricating a substrate-free high-temperature polysilicon-thin film transistor structure in a MicroLED three-primary-color light-emitting structure according to an embodiment of the present disclosure.
图4为根据本公开实施例的MicroLED三基色发光结构中的高温多晶硅-薄膜晶体管结构示意图。FIG. 4 is a schematic structural diagram of a high-temperature polysilicon-thin film transistor in a MicroLED three-primary-color light emitting structure according to an embodiment of the present disclosure.
结合图3和图4所示，该MicroLED三基色发光结构中无衬底高温多晶硅-薄膜晶体管结构的制备方法可以包括步骤S301～S306。As shown in FIG. 3 and FIG. 4 , the method for preparing the substrate-free high-temperature polysilicon-thin film transistor structure in the MicroLED three-primary-color light-emitting structure may include steps S301-S306.
步骤S301：在蓝宝石衬底1上采用金属有机化合物化学气相沉淀工艺(MOCVD)生长GaN层2，膜厚2-7um。Step S301: On the sapphire substrate 1, grow a GaN layer 2 with a film thickness of 2-7um by metal organic compound chemical vapor deposition (MOCVD).
根据本公开的实施例，GaN层2可以被激光分解，后续进行蓝宝石衬底剥离时，可以通过激光分解GaN层2达到衬底剥离的目的。According to the embodiment of the present disclosure, the GaN layer 2 can be decomposed by laser, and when the sapphire substrate is subsequently peeled off, the purpose of substrate peeling can be achieved by decomposing the GaN layer 2 by laser.
步骤S302：在上述GaN层2上采用等离子体增强化学的气相沉积法工艺(PECVD)淀 积SiO 2/分布式布拉格反射镜层3，膜厚0.5-2um。 Step S302: Deposit the SiO 2 /distributed Bragg reflector layer 3 on the above-mentioned GaN layer 2 by plasma enhanced chemical vapor deposition (PECVD), with a film thickness of 0.5-2 um.
根据本公开的实施例，SiO 2的功能是电隔离和电绝缘，分布式布拉格反射镜的作用是消除LED发光对TFT的干扰。 According to the embodiment of the present disclosure, the function of SiO 2 is electrical isolation and electrical insulation, and the function of the distributed Bragg reflector is to eliminate the interference of LED light emission on the TFT.
步骤S303：在上述SiO 2/分布式布拉格反射镜3上生长高温多晶硅41并淀积金属膜层，通过离子注入、刻蚀、光刻腐蚀等工艺，形成薄膜晶体管42，并构成2T1C驱动电路。 Step S303: grow high-temperature polysilicon 41 on the SiO 2 /distributed Bragg mirror 3 and deposit a metal film layer, and form a thin film transistor 42 through ion implantation, etching, photolithography, etc., and form a 2T1C drive circuit.
根据本公开的实施例，高温多晶硅(High Temperature Poly-Silicon)，简称HTPS，它是有源矩阵驱动方式的透过型LCD。According to an embodiment of the present disclosure, High Temperature Poly-Silicon (HTPS), referred to as HTPS, is a transmissive LCD driven by an active matrix.
步骤S304：采用电感耦合等离子体刻蚀工艺(ICP)对蓝宝石衬底1上的膜层进行逐层刻蚀，刻蚀到蓝宝石衬底1之上，在蓝宝石衬底1上形成多个分立的高温多晶硅-薄膜晶体管结构9。Step S304: using an inductively coupled plasma etching process (ICP) to etch the film layer on the sapphire substrate 1 layer by layer, etch onto the sapphire substrate 1, and form a plurality of discrete High temperature polysilicon-thin film transistor structure9.
根据本公开的实施例，利用无衬底高温多晶硅-薄膜晶体管结构9的有源驱动技术，使迁移率提高到400cm 2/Vs以上，能够进一步缩小驱动芯片尺寸、缩小显示屏点间距，提高显示屏分辨率。 According to the embodiment of the present disclosure, the active driving technology of substrateless high-temperature polysilicon-thin film transistor structure 9 is used to increase the mobility to more than 400 cm 2 /Vs, which can further reduce the size of the driving chip, reduce the pixel pitch of the display screen, and improve the display performance. screen resolution.
步骤S305：从蓝宝石衬底1的另一面，采用激光照射上述分立的高温多晶硅-薄膜晶体管结构9，激光穿过蓝宝石衬底1将GaN层2分解。Step S305 : From the other side of the sapphire substrate 1 , irradiate the discrete high-temperature polysilicon-thin film transistor structure 9 with laser light, and the laser passes through the sapphire substrate 1 to decompose the GaN layer 2 .
步骤S306：通过转移胶膜将高温多晶硅-薄膜晶体管结构9移走。Step S306: removing the high temperature polysilicon-thin film transistor structure 9 by transferring the adhesive film.
根据本公开的实施例，通过蓝宝石衬底上1的GaN层2形成无衬底高温多晶硅-薄膜晶体管结构9，避免了传统切割工艺带来的机械损伤和尺寸限制，能够进一步缩小驱动芯片尺寸，缩小显示屏点间距，提高显示屏分辨率。According to the embodiment of the present disclosure, the substrate-less high-temperature polysilicon-thin film transistor structure 9 is formed through the GaN layer 2 on the sapphire substrate 1, which avoids the mechanical damage and size limitation caused by the traditional cutting process, and can further reduce the size of the driver chip. Reduce the dot pitch of the display and increase the resolution of the display.
图5为根据本公开实施例的MicroLED三基色发光结构中无衬底红光OLED结构的制备方法流程图。5 is a flow chart of a method for preparing a substrate-less red OLED structure in a MicroLED three-primary-color light-emitting structure according to an embodiment of the disclosure.
图6为根据本公开实施例的MicroLED三基色发光结构中的红光OLED的结构示意图。FIG. 6 is a schematic structural view of a red OLED in a MicroLED three-primary-color light-emitting structure according to an embodiment of the present disclosure.
图7为根据本公开实施例的MicroLED三基色发光结构中的刻蚀密封胶后红光OLED的结构示意图。7 is a schematic structural view of a red OLED after etching a sealant in a MicroLED three-primary-color light-emitting structure according to an embodiment of the present disclosure.
结合图5～图7所示，该MicroLED三基色发光结构中无衬底红光OLED结构的制备方法可以包括步骤S501～S510。As shown in FIG. 5 to FIG. 7 , the preparation method of the substrate-less red OLED structure in the MicroLED three-primary-color light emitting structure may include steps S501 to S510.
步骤S501：在蓝宝石衬底1上采用金属有机化合物化学气相沉淀工艺(MOCVD)生长GaN层2，层厚2-7um。Step S501: On the sapphire substrate 1, a GaN layer 2 is grown on the sapphire substrate 1 by metal organic compound chemical vapor deposition (MOCVD), with a layer thickness of 2-7um.
根据本公开的实施例，GaN层2可以被激光分解，后续进行蓝宝石衬底1剥离时，可以通过激光分解GaN层2达到衬底剥离的目的。According to the embodiment of the present disclosure, the GaN layer 2 can be decomposed by laser, and when the sapphire substrate 1 is subsequently peeled off, the GaN layer 2 can be decomposed by the laser to achieve the purpose of substrate peeling.
步骤S502：在上述GaN层2上采用等离子体增强化学的气相沉积法工艺(PECVD)淀 积SiO 2层3，层厚0.5-2um。 Step S502: Deposit a SiO 2 layer 3 on the GaN layer 2 with a thickness of 0.5-2 um by using plasma enhanced chemical vapor deposition (PECVD).
根据本公开的实施例，SiO2的作用是电隔离和电绝缘。According to an embodiment of the present disclosure, the role of SiO2 is electrical isolation and electrical insulation.
步骤S503：采用电感耦合等离子体刻蚀工艺(ICP)对蓝宝石衬底1上的GaN层2和SiO 2层3进行刻蚀，刻蚀到蓝宝石衬底1之上，在蓝宝石衬底1上形成多个分立的结构。 Step S503: Etching the GaN layer 2 and the SiO 2 layer 3 on the sapphire substrate 1 by using an inductively coupled plasma etching process (ICP), etching them onto the sapphire substrate 1, and forming on the sapphire substrate 1 multiple separate structures.
步骤S504：对上述基片淀积透明电极层5(ITO)，膜厚0.1um-0.5um，对其光刻腐蚀工艺，使上述分立的结构上附着有透明电极层5(ITO)，透明电极层5(ITO)作为红光OLED结构的阳极。Step S504: Deposit a transparent electrode layer 5 (ITO) on the above-mentioned substrate with a film thickness of 0.1um-0.5um, and perform photolithography and etching process on it, so that the above-mentioned discrete structure is attached with a transparent electrode layer 5 (ITO), and the transparent electrode Layer 5 (ITO) acts as the anode for the red OLED structure.
步骤S505：将上述基片送入OLED材料蒸镀***利用mask掩膜淀积有机功能层6。Step S505: sending the above substrate into the OLED material evaporation system to deposit the organic functional layer 6 using a mask.
步骤S506：将上述基片送入OLED材料蒸镀***利用mask掩膜淀积阴极金属层7，形成多个分立的红光OLED结构。Step S506: Send the above substrate into the OLED material evaporation system to deposit the cathode metal layer 7 using a mask to form multiple discrete red OLED structures.
根据本公开的实施例，利用磷光材料制备的红光OLED结构代替AlGaInP红光LED结构，进一步提高红光微芯片结构的发光效率，在三基色显示中，使红光发光效率与蓝、绿芯片更匹配，降低功耗、减小芯片面积、进一步缩小点间距，提高显示屏分辨率。According to the embodiments of the present disclosure, the AlGaInP red LED structure is replaced by the red OLED structure prepared by the phosphorescent material, and the luminous efficiency of the red microchip structure is further improved. More matching, lower power consumption, smaller chip area, further narrow dot pitch, and higher display resolution.
步骤S507：将上述基片传入充有99.99％纯度氮气的手套箱进行密封胶8涂敷工艺，密封胶8固化后将基片传出手套箱。Step S507: The above-mentioned substrate is passed into a glove box filled with 99.99% pure nitrogen for coating process of the sealant 8, and the substrate is passed out of the glove box after the sealant 8 is cured.
步骤S508：对上述基片上的密封胶进行刻蚀工艺，使封装胶只保护分立的红光OLED结构，并且露出两个ITO电极，分别充当红光OLED微芯片的阳极和阴极。Step S508: performing an etching process on the sealant on the above-mentioned substrate, so that the encapsulant only protects the discrete red OLED structure, and exposes two ITO electrodes, serving as the anode and cathode of the red OLED microchip respectively.
步骤S509：从蓝宝石衬底1的另一面，采用激光照射上述基片的红光OLED结构，激光穿过蓝宝石衬底将GaN层2分解。Step S509 : From the other side of the sapphire substrate 1 , laser light is used to irradiate the red light OLED structure of the above substrate, and the laser passes through the sapphire substrate to decompose the GaN layer 2 .
步骤S510：通过转移胶膜将红光OLED结构10从蓝宝石衬底上移走，形成带有GaN外延层支撑体的红光OLED结构10。Step S510: removing the red OLED structure 10 from the sapphire substrate by transferring the adhesive film to form the red OLED structure 10 with a GaN epitaxial layer support.
根据本公开的实施例，通过蓝宝石衬底上1的GaN层2形成无衬底红光OLED结构10，避免了传统切割工艺带来的机械损伤和尺寸限制，能够进一步缩小驱动芯片尺寸，缩小显示屏点间距，提高显示屏分辨率。According to the embodiment of the present disclosure, the substrate-less red OLED structure 10 is formed by the GaN layer 2 on the sapphire substrate 1, which avoids the mechanical damage and size limitation caused by the traditional cutting process, and can further reduce the size of the driving chip and reduce the size of the display. Screen dot pitch, improve display resolution.
图8为根据本公开实施例的MicroLED三基色发光结构中无衬底绿光LED结构和无衬底蓝光LED结构的制备方法流程图。8 is a flow chart of a method for preparing a substrate-free green LED structure and a substrate-free blue LED structure in a MicroLED three-primary-color light-emitting structure according to an embodiment of the present disclosure.
如图8所示，该MicroLED三基色发光结构中无衬底绿光LED结构和无衬底蓝光LED结构的制备方法可以包括步骤S801～S804。As shown in FIG. 8 , the method for preparing the substrate-free green LED structure and the substrate-free blue LED structure in the MicroLED three-primary-color light-emitting structure may include steps S801-S804.
步骤S801：在蓝宝石衬底1上采用金属有机化合物化学气相沉淀(MOCVD)工艺生长GaN层2，层厚2-7um。Step S801: On the sapphire substrate 1, a GaN layer 2 is grown on the sapphire substrate 1 with a metal organic chemical vapor deposition (MOCVD) process, with a layer thickness of 2-7um.
根据本公开的实施例，GaN层2可以被激光分解，后续进行蓝宝石衬底1剥离时，可以 通过激光分解GaN层2达到衬底剥离的目的。According to the embodiment of the present disclosure, the GaN layer 2 can be decomposed by laser, and when the sapphire substrate 1 is subsequently peeled off, the GaN layer 2 can be decomposed by laser to achieve the purpose of substrate peeling.
步骤S802：采用倒装结构InGaN LED工艺在蓝宝石衬底1上制备绿光LED结构和蓝光LED结构。Step S802: Prepare a green LED structure and a blue LED structure on the sapphire substrate 1 by using a flip-chip InGaN LED process.
步骤S803：从蓝宝石衬底1的另一面，采用激光照射上述基片的绿光LED结构和蓝光LED结构，激光穿过蓝宝石衬底将截面处的GaN层2分解。Step S803: From the other side of the sapphire substrate 1, irradiate the green LED structure and the blue LED structure of the above substrate with laser light, and the laser passes through the sapphire substrate to decompose the GaN layer 2 at the cross section.
步骤S804：通过转移胶膜将无衬底绿光LED结构11和无衬底蓝光LED结构12移走。Step S804: Remove the substrate-free green LED structure 11 and the substrate-free blue LED structure 12 by transferring the adhesive film.
根据本公开的实施例，通过蓝宝石衬底上1的GaN层2形成无衬底绿光LED结构11和无衬底蓝光LED结构12，避免了传统切割工艺带来的机械损伤和尺寸限制，能够进一步缩小驱动芯片尺寸，缩小显示屏点间距，提高显示屏分辨率。According to the embodiment of the present disclosure, the substrate-less green LED structure 11 and the substrate-free blue LED structure 12 are formed through the GaN layer 2 on the sapphire substrate, which avoids the mechanical damage and size limitation caused by the traditional cutting process, and can Further reduce the size of the driver chip, reduce the dot pitch of the display screen, and increase the resolution of the display screen.
图9为根据本公开另一实施例的MicroLED三基色发光阵列的制备方法流程图。FIG. 9 is a flow chart of a method for manufacturing a MicroLED three-primary-color light-emitting array according to another embodiment of the present disclosure.
图10为根据本公开另一实施例的MicroLED三基色发光阵列的结构示意图。FIG. 10 is a schematic structural diagram of a MicroLED three-primary-color light-emitting array according to another embodiment of the present disclosure.
结合图9和图10所示，该MicroLED三基色发光阵列的制备方法可以包括步骤S901～S902。As shown in conjunction with FIG. 9 and FIG. 10 , the preparation method of the MicroLED three-primary-color light-emitting array may include steps S901-S902.
步骤S901：在显示基板13上，依次转移无衬底高温多晶硅-薄膜晶体管结构9、无衬底红光OLED结构10、无衬底绿光LED微芯片11和无衬底蓝光LED微芯片12，按设定位置排列组成MicroLED三基色发光结构，无衬底高温多晶硅-薄膜晶体管结构9驱动无衬底红光OLED结构10、无衬底绿光LED微芯片11和无衬底蓝光LED微芯片12，经过金属蒸镀、光刻腐蚀等电极互联工艺形成六个电极引出电极，分别是Vdd电极、GND接地电极、V select选通电极和V data-R、V data-G、V data-B数据电极，多个发光结构排列成矩阵形式。 Step S901: On the display substrate 13, sequentially transfer the substrate-free high-temperature polysilicon-thin film transistor structure 9, the substrate-free red OLED structure 10, the substrate-free green LED microchip 11 and the substrate-free blue LED microchip 12, Arranged according to the set positions to form a MicroLED three-primary-color light-emitting structure, the substrate-free high-temperature polysilicon-thin film transistor structure 9 drives the substrate-free red OLED structure 10, the substrate-less green LED microchip 11 and the substrate-free blue LED microchip 12 , through metal evaporation, photolithography and other electrode interconnection processes to form six electrode lead-out electrodes, which are Vdd electrode, GND ground electrode, V select gate electrode and V data-R , V data-G , V data-B data An electrode, and a plurality of light emitting structures are arranged in a matrix form.
步骤S902：对整屏上每个发光结构的六个引出电极进行金属蒸镀、光刻腐蚀等电极互联工艺，形成整屏的扫描线、数据线和电极引出线，引出到显示阵列的边缘，连接***信号和电源实现图像显示。Step S902: Perform electrode interconnection processes such as metal evaporation and photolithography on the six lead-out electrodes of each light-emitting structure on the entire screen to form scan lines, data lines, and electrode lead-out lines for the entire screen, and lead them to the edge of the display array. Connect peripheral signals and power to realize image display.
根据本公开的实施例，包括由多个发光结构组成的MicroLED三基色发光阵列中，每个发光结构在组屏前都经过测试和筛选，整屏坏点少、缺陷少，质量高，免修复，成本低。According to the embodiments of the present disclosure, in the MicroLED three-primary-color light-emitting array composed of multiple light-emitting structures, each light-emitting structure has been tested and screened before the screen is assembled, and the entire screen has fewer dead pixels, fewer defects, high quality, and repair-free ,low cost.
以上本公开的具体实施方式，并不构成对本公开保护范围的限定。任何根据本公开的技术构思所作出的各种其他相应的改变与变形，均应包含在本公开权利要求的保护范围内。The specific implementation manners of the present disclosure above are not intended to limit the protection scope of the present disclosure. Any other corresponding changes and modifications made according to the technical concepts of the present disclosure shall be included in the protection scope of the claims of the present disclosure.

Claims (10)

  1. 一种MicroLED三基色发光结构，包括：A MicroLED three-primary-color light-emitting structure, comprising:
    显示基板；display substrate;
    位于所述显示基板上的无衬底高温多晶硅-薄膜晶体管结构；A substrate-free high-temperature polysilicon-thin film transistor structure located on the display substrate;
    位于所述显示基板上的无衬底红光OLED结构，与所述高温多晶硅-薄膜晶体管结构连接，包括阳极与阴极；A substrate-less red OLED structure located on the display substrate, connected to the high temperature polysilicon-thin film transistor structure, including an anode and a cathode;
    位于所述显示基板上的无衬底绿光LED结构，与所述高温多晶硅-薄膜晶体管结构连接，包括P电极与N电极；以及A substrate-less green LED structure located on the display substrate, connected to the high-temperature polysilicon-thin film transistor structure, including a P electrode and an N electrode; and
    位于所述显示基板上的无衬底蓝光LED结构，与所述高温多晶硅-薄膜晶体管结构连接，包括P电极与N电极。The substrate-less blue LED structure on the display substrate is connected to the high-temperature polysilicon-thin film transistor structure, including a P electrode and an N electrode.
  2. 根据权利要求1所述的发光结构，其中，所述无衬底高温多晶硅-薄膜晶体管结构包括：The light emitting structure according to claim 1, wherein the substrate-less high temperature polysilicon-thin film transistor structure comprises:
    GaN层；GaN layer;
    SiO 2/分布式布拉格反射镜层，淀积在所述GaN层上；以及 a SiO 2 /distributed Bragg mirror layer deposited on the GaN layer; and
    高温多晶硅-薄膜晶体管层，生长在所述SiO 2/分布式布拉格反射镜层上。 A high temperature polysilicon-thin film transistor layer is grown on the SiO 2 /distributed Bragg mirror layer.
  3. 根据权利要求1或2所述的发光结构，其中，所述无衬底红光OLED结构包括：The light emitting structure according to claim 1 or 2, wherein the substrate-less red OLED structure comprises:
    GaN层；GaN layer;
    SiO 2层，淀积在所述GaN层上； a SiO2 layer deposited on said GaN layer;
    透明电极层，淀积在所述SiO 2层上； a transparent electrode layer deposited on said SiO2 layer;
    有机功能层，淀积在所述透明电极层上；an organic functional layer deposited on the transparent electrode layer;
    阴极金属层，淀积在所述有机功能层上；以及a cathode metal layer deposited on the organic functional layer; and
    密封胶层，涂敷在所述阴极金属层上。A sealant layer coated on the cathode metal layer.
  4. 根据权利要求1-3之一所述的发光结构，其中，所述无衬底绿光LED结构和所述无衬底蓝光LED结构包括：The light emitting structure according to any one of claims 1-3, wherein the substrate-free green LED structure and the substrate-free blue LED structure comprise:
    GaN层；以及GaN layer; and
    InGaN层，生长在所述GaN层上。an InGaN layer grown on the GaN layer.
  5. 一种MicroLED三基色发光阵列，包括：A MicroLED three-primary-color light-emitting array, comprising:
    排列为矩阵的多个如权利要求1所述的MicroLED三基色发光结构；A plurality of MicroLED three-primary-color light-emitting structures as claimed in claim 1 arranged in a matrix;
    其中，每个所述MicroLED三基色发光结构各自与引出电极Vdd、接地电极GND、选通电极V select、数据电极V data-R、数据电极V data-G以及数据电极V data-B电连接；所述引出电极Vdd 连接所述无衬底高温多晶硅-薄膜晶体管结构；所述接地电极GND接地；所述选通电极V select连接至所述无衬底红光OLED结构的阳极、所述无衬底绿光LED结构的P电极与所述无衬底蓝光LED结构的P电极； Wherein, each of the MicroLED three-primary-color light-emitting structures is electrically connected to the extraction electrode Vdd, the ground electrode GND, the gate electrode V select , the data electrode V data-R , the data electrode V data-G , and the data electrode V data-B ; The lead-out electrode Vdd is connected to the substrateless high-temperature polysilicon-thin film transistor structure; the ground electrode GND is grounded; the gate electrode V select is connected to the anode of the substrateless red OLED structure, the substrateless The P electrode of the bottom green LED structure and the P electrode of the substrate-free blue LED structure;
    其中，每个所述MicroLED三基色发光结构的所述选通电极V select电极互联形成阵列的扫描线；每个所述MicroLED三基色发光结构的所述数据电极V data-R、数据电极V data-G以及数据电极V data-B电极互联形成阵列的数据线；每个所述MicroLED三基色发光结构的所述引出电极Vdd电极互联形成阵列的引出线；所述扫描线连接电源，所述引出线和所述数据线连接***信号，用以实现图像显示。 Wherein, the gate electrodes V select electrodes of each MicroLED three-primary-color light-emitting structure are interconnected to form scan lines of the array; the data electrodes V data-R and data electrodes V data of each MicroLED three-primary-color light-emitting structure -G and data electrodes V data-B electrodes are interconnected to form the data lines of the array; the extraction electrodes Vdd electrodes of each of the MicroLED three-color light-emitting structures are interconnected to form the extraction lines of the array; the scanning lines are connected to the power supply, and the extraction The wire and the data wire are connected with peripheral signals to realize image display.
  6. 一种MicroLED三基色发光结构的制备方法，包括：A method for preparing a MicroLED three-primary-color light-emitting structure, comprising:
    制作所述无衬底高温多晶硅-薄膜晶体管结构；Fabricating the substrate-free high-temperature polysilicon-thin film transistor structure;
    制作所述无衬底红光OLED结构；Making the substrate-free red light OLED structure;
    制作所述无衬底绿光LED结构；Making the substrate-free green LED structure;
    制作所述无衬底蓝光LED结构；以及making the substrate-free blue LED structure; and
    将所述无衬底高温多晶硅-薄膜晶体管结构、所述无衬底红光OLED结构、所述无衬底绿光LED结构以及所述无衬底蓝光LED结构设置在所述显示基板上。The substrate-free high-temperature polysilicon-thin film transistor structure, the substrate-free red OLED structure, the substrate-free green LED structure and the substrate-free blue LED structure are arranged on the display substrate.
  7. 根据权利要求6所述的发光结构的制备方法，其中，所述制作无衬底高温多晶硅-薄膜晶体管结构的方法包括：The method for preparing a light-emitting structure according to claim 6, wherein the method for manufacturing a substrate-free high-temperature polysilicon-thin film transistor structure comprises:
    在蓝宝石衬底上制备GaN层；GaN layer is prepared on sapphire substrate;
    在所述GaN层上淀积SiO 2/分布式布拉格反射镜层； depositing a SiO 2 /distributed Bragg mirror layer on the GaN layer;
    在所述SiO 2/分布式布拉格反射镜层上制备高温多晶硅-薄膜晶体管层； Preparing a high-temperature polysilicon-thin film transistor layer on the SiO 2 /distributed Bragg reflector layer;
    通过电感耦合等离子体刻蚀工艺对所述蓝宝石衬底上的所述高温多晶硅-薄膜晶体管层、所述SiO 2/分布式布拉格反射镜层和所述GaN层进行逐层刻蚀，刻蚀到所述蓝宝石衬底之上，形成多个分立的高温多晶硅-薄膜晶体管结构； The high temperature polysilicon-thin film transistor layer, the SiO 2 /distributed Bragg mirror layer and the GaN layer on the sapphire substrate are etched layer by layer by an inductively coupled plasma etching process, and etched to On the sapphire substrate, a plurality of discrete high-temperature polysilicon-thin film transistor structures are formed;
    从所述蓝宝石衬底的另一面，通过激光照射所述分立的高温多晶硅-薄膜晶体管结构，将界面处的所述GaN层分解；以及from the other side of the sapphire substrate, decomposing the GaN layer at the interface by irradiating the discrete high-temperature polysilicon-thin film transistor structure with laser light; and
    通过转移胶膜将所述高温多晶硅-薄膜晶体管结构从所述蓝宝石衬底上剥离下来。The high temperature polysilicon-thin film transistor structure is peeled off from the sapphire substrate by transferring the adhesive film.
  8. 根据权利要求6或7所述的发光结构的制备方法，其中，所述制作无衬底红光OLED结构的方法包括：The method for preparing a light-emitting structure according to claim 6 or 7, wherein the method for manufacturing a substrate-less red OLED structure comprises:
    在蓝宝石衬底上制备GaN层；GaN layer is prepared on sapphire substrate;
    在所述GaN层上淀积SiO 2层； Depositing a SiO2 layer on said GaN layer;
    通过电感耦合等离子体刻蚀工艺对所述蓝宝石衬底上的所述SiO 2层和所述GaN层进行 逐层刻蚀，刻蚀到所述蓝宝石衬底之上，形成多个分立的所述SiO 2层和所述GaN层台面； The SiO2 layer and the GaN layer on the sapphire substrate are etched layer by layer by an inductively coupled plasma etching process, etched onto the sapphire substrate to form a plurality of discrete SiO2 layer and the GaN layer mesa;
    在所述分立的所述SiO 2层和所述GaN层台面上淀积透明电极层，通过光刻腐蚀工艺得到在所述分立的所述SiO 2层和所述GaN层台面上附着有透明电极层的基片； A transparent electrode layer is deposited on the discrete SiO2 layer and the GaN layer mesa, and a transparent electrode is attached to the discrete SiO2 layer and the GaN layer mesa through a photolithographic etching process layer of substrate;
    通过OLED材料蒸镀***在所述基片的所述透明电极层上淀积有机功能层；Depositing an organic functional layer on the transparent electrode layer of the substrate by an OLED material evaporation system;
    通过所述OLED材料蒸镀***在所述基片的所述有机功能层上淀积阴极金属层；depositing a cathode metal layer on the organic functional layer of the substrate through the OLED material evaporation system;
    通过手套箱对淀积后的基片进行密封胶涂敷，得到固化后的基片；Apply a sealant to the deposited substrate through a glove box to obtain a cured substrate;
    对所述固化后的基片上的密封胶进行刻蚀，得到分立的红光OLED结构，并且露出两个电极，所述两个电极为红光OLED结构的所述阳极和所述阴极；Etching the sealant on the cured substrate to obtain a discrete red OLED structure, and exposing two electrodes, the two electrodes being the anode and the cathode of the red OLED structure;
    从所述蓝宝石衬底的另一面，通过激光照射所述红光OLED结构，将界面处的所述GaN层分解；以及From the other side of the sapphire substrate, irradiating the red light OLED structure with laser light, decomposing the GaN layer at the interface; and
    通过转移胶膜将所述红光OLED结构从所述蓝宝石衬底上剥离下来。The red light OLED structure is peeled off from the sapphire substrate by transferring the adhesive film.
  9. 根据权利要求6-8之一所述的发光结构的制备方法，其中，所述制作无衬底绿光LED结构和所述无衬底蓝光LED结构的方法包括：The method for preparing a light-emitting structure according to any one of claims 6-8, wherein the method for manufacturing the substrate-free green LED structure and the substrate-free blue LED structure comprises:
    在蓝宝石衬底上制备GaN层；GaN layer is prepared on sapphire substrate;
    通过倒装结构InGaN LED工艺在所述GaN层上制备绿光LED结构；A green LED structure is prepared on the GaN layer by a flip-chip InGaN LED process;
    通过倒装结构InGaN LED工艺在所述GaN层上制备蓝光LED结构；Prepare a blue LED structure on the GaN layer by a flip-chip InGaN LED process;
    从所述蓝宝石衬底的另一面，通过激光照射所述绿光LED结构和所述蓝光LED结构，将界面处的所述GaN层分解；以及From the other side of the sapphire substrate, the GaN layer at the interface is decomposed by irradiating the green LED structure and the blue LED structure with laser light; and
    通过转移胶膜将所述绿光LED结构和所述蓝光LED结构从所述蓝宝石衬底上剥离下来。The green LED structure and the blue LED structure are peeled off from the sapphire substrate by transferring the adhesive film.
  10. 一种MicroLED三基色发光阵列的制备方法，包括：A method for preparing a MicroLED three-primary-color light-emitting array, comprising:
    将多个根据权利要求6所述的发光结构的制备方法制备得到的MicroLED三基色发光结构按照矩阵形式排列；Arranging a plurality of MicroLED three-primary-color light-emitting structures prepared by the method for preparing the light-emitting structure according to claim 6 in a matrix form;
    其中，每个所述MicroLED三基色发光结构各自与引出电极Vdd、接地电极GND、选通电极V select、数据电极V data-R、数据电极V data-G以及数据电极V data-B电连接；所述引出电极Vdd连接所述无衬底高温多晶硅-薄膜晶体管结构；所述接地电极GND接地；所述选通电极V select连接至所述无衬底红光OLED结构的阳极、所述无衬底绿光LED结构的P电极与所述无衬底蓝光LED结构的P电极； Wherein, each of the MicroLED three-primary-color light-emitting structures is electrically connected to the extraction electrode Vdd, the ground electrode GND, the gate electrode V select , the data electrode V data-R , the data electrode V data-G , and the data electrode V data-B ; The lead-out electrode Vdd is connected to the substrateless high-temperature polysilicon-thin film transistor structure; the ground electrode GND is grounded; the gate electrode V select is connected to the anode of the substrateless red OLED structure, the substrateless The P electrode of the bottom green LED structure and the P electrode of the substrate-free blue LED structure;
    通过金属电极蒸镀和光刻腐蚀将每个所述MicroLED三基色发光结构的所述选通电极V select电极互联形成阵列的扫描线；每个所述MicroLED三基色发光结构的所述数据电极V data-R、数据电极V data-G以及数据电极V data-B电极互联形成阵列的数据线；每个所述MicroLED三基色发光结构的所述引出电极Vdd电极互联形成阵列的引出线；所述扫描线连接电源，所述引 出线和所述数据线连接***信号，用以实现图像显示。 The gate electrodes V select electrodes of each of the MicroLED three-primary-color light-emitting structures are interconnected by metal electrode evaporation and photolithography to form scan lines of the array; the data electrodes V of each of the MicroLED three-primary-color light-emitting structures data-R , data electrode V data-G , and data electrode V data-B are interconnected to form a data line of the array; the extraction electrodes Vdd electrodes of each of the three primary color light-emitting structures of the MicroLED are interconnected to form an array of extraction lines; The scan line is connected to a power supply, and the lead line and the data line are connected to peripheral signals to realize image display.
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