CN1127766C - 半导体存储器 - Google Patents
半导体存储器 Download PDFInfo
- Publication number
- CN1127766C CN1127766C CN98123556A CN98123556A CN1127766C CN 1127766 C CN1127766 C CN 1127766C CN 98123556 A CN98123556 A CN 98123556A CN 98123556 A CN98123556 A CN 98123556A CN 1127766 C CN1127766 C CN 1127766C
- Authority
- CN
- China
- Prior art keywords
- sense amplifier
- mos transistor
- generating circuit
- signal generating
- district
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000005086 pumping Methods 0.000 claims description 28
- 230000005284 excitation Effects 0.000 claims description 4
- 230000004913 activation Effects 0.000 abstract 2
- 230000003213 activating effect Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 34
- 239000002184 metal Substances 0.000 description 34
- 238000010586 diagram Methods 0.000 description 12
- 230000001965 increasing effect Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000007600 charging Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29679097A JP3235544B2 (ja) | 1997-10-29 | 1997-10-29 | 半導体記憶装置 |
JP296790/97 | 1997-10-29 | ||
JP296790/1997 | 1997-10-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1216861A CN1216861A (zh) | 1999-05-19 |
CN1127766C true CN1127766C (zh) | 2003-11-12 |
Family
ID=17838173
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN98123556A Expired - Fee Related CN1127766C (zh) | 1997-10-29 | 1998-10-29 | 半导体存储器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5999436A (zh) |
JP (1) | JP3235544B2 (zh) |
KR (1) | KR100281666B1 (zh) |
CN (1) | CN1127766C (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102195321B1 (ko) * | 2016-08-31 | 2020-12-24 | 마이크론 테크놀로지, 인크 | 감지 증폭기 구성물 |
CN110192280A (zh) | 2017-01-12 | 2019-08-30 | 美光科技公司 | 存储器单元、双晶体管单电容器存储器单元阵列、形成双晶体管单电容器存储器单元阵列的方法及用于制造集成电路的方法 |
US10839861B2 (en) * | 2018-01-26 | 2020-11-17 | Arm Limited | Routing structures for memory applications |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0164391B1 (ko) * | 1995-06-29 | 1999-02-18 | 김광호 | 고속동작을 위한 회로 배치 구조를 가지는 반도체 메모리 장치 |
-
1997
- 1997-10-29 JP JP29679097A patent/JP3235544B2/ja not_active Expired - Fee Related
-
1998
- 1998-10-28 US US09/179,853 patent/US5999436A/en not_active Expired - Lifetime
- 1998-10-28 KR KR1019980045381A patent/KR100281666B1/ko not_active IP Right Cessation
- 1998-10-29 CN CN98123556A patent/CN1127766C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH11135744A (ja) | 1999-05-21 |
JP3235544B2 (ja) | 2001-12-04 |
KR19990037450A (ko) | 1999-05-25 |
CN1216861A (zh) | 1999-05-19 |
US5999436A (en) | 1999-12-07 |
KR100281666B1 (ko) | 2001-03-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1283005C (zh) | 半导体存储设备 | |
CN1044526C (zh) | 半导体存贮装置 | |
CN1086836C (zh) | 半导体存储器装置及其驱动装置 | |
EP0600184B1 (en) | Semiconductor memory device having dual word line structure | |
CN1695249A (zh) | 半导体存储装置 | |
CN1181632A (zh) | 动态存储器 | |
CN1474411A (zh) | 具有伪存储单元的静态半导体存储装置 | |
CN1210720C (zh) | 半导体存储器元件 | |
CN1154561A (zh) | 半导体存储装置和使用了该半导体存储装置的电子设备 | |
CN1487527A (zh) | 能够实现冗余单元阵列正确替换的半导体存储器 | |
IE52689B1 (en) | Semiconductor memory device | |
CN1828764A (zh) | 具有低功率预充电位线的存储器阵列 | |
CN1021998C (zh) | 半导体存储器件 | |
CN1705038A (zh) | 半导体存储装置中基于存储体的自刷新控制装置及其方法 | |
CN1218260A (zh) | 铁电随机存取存储器及测试短寿命单元的方法 | |
CN1134023A (zh) | 半导体存储器 | |
JPH09129837A (ja) | 半導体メモリ装置及びその製造方法 | |
CN1585033A (zh) | 驱动非挥发性动态随机存取存储器的装置以及方法 | |
CN1467747A (zh) | 半导体存储器件 | |
CN1125466C (zh) | 非易失半导体存储器 | |
KR20010113705A (ko) | 반도체집적회로장치 | |
CN101080820A (zh) | 减少字线耦合噪声的置乱方法 | |
CN1127766C (zh) | 半导体存储器 | |
CN1599938A (zh) | 多字线访问和访问器 | |
US6282147B1 (en) | Semiconductor memory device having word lines driven by row selecting signal and column selecting signal lines arranged parallel to each other |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NONE Effective date: 20030509 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20030509 Address after: Tokyo, Japan Applicant after: NEC Corp. Co-applicant after: NEC Corp. Address before: Tokyo, Japan Applicant before: NEC Corp. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: ELPIDA MEMORY INC. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD.; NEC ELECTRONICS TAIWAN LTD. Effective date: 20080613 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20080613 Address after: Tokyo, Japan Patentee after: Nihitatsu Memory Co., Ltd. Address before: Tokyo Co-patentee before: NEC Corp. Patentee before: NEC Corp. |
|
ASS | Succession or assignment of patent right |
Owner name: PS4 LASCO CO., LTD. Free format text: FORMER OWNER: NIHITATSU MEMORY CO., LTD. Effective date: 20130828 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130828 Address after: Luxemburg Luxemburg Patentee after: PS4 Russport Co.,Ltd. Address before: Tokyo, Japan Patentee before: Nihitatsu Memory Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20031112 Termination date: 20151029 |
|
EXPY | Termination of patent right or utility model |