CN112563370A - 单晶perc晶硅电池背钝化制备工艺及perc太阳能电池 - Google Patents
单晶perc晶硅电池背钝化制备工艺及perc太阳能电池 Download PDFInfo
- Publication number
- CN112563370A CN112563370A CN202011407347.XA CN202011407347A CN112563370A CN 112563370 A CN112563370 A CN 112563370A CN 202011407347 A CN202011407347 A CN 202011407347A CN 112563370 A CN112563370 A CN 112563370A
- Authority
- CN
- China
- Prior art keywords
- silicon
- cell
- back passivation
- perc
- silicon wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 238000002161 passivation Methods 0.000 title claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 52
- 239000010703 silicon Substances 0.000 title claims abstract description 52
- 239000013078 crystal Substances 0.000 title claims abstract description 37
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 36
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 36
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 64
- 230000008569 process Effects 0.000 claims abstract description 57
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 claims abstract description 23
- 238000000151 deposition Methods 0.000 claims abstract description 16
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 5
- 238000005137 deposition process Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 21
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 12
- 230000000694 effects Effects 0.000 claims description 12
- 238000012360 testing method Methods 0.000 claims description 10
- 239000003513 alkali Substances 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 9
- 238000005245 sintering Methods 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 230000005587 bubbling Effects 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 238000010926 purge Methods 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 claims description 3
- 230000002238 attenuated effect Effects 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 3
- 230000002708 enhancing effect Effects 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000007517 polishing process Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- IEDVJHCEMCRBQM-UHFFFAOYSA-N trimethoprim Chemical compound COC1=C(OC)C(OC)=CC(CC=2C(=NC(N)=NC=2)N)=C1 IEDVJHCEMCRBQM-UHFFFAOYSA-N 0.000 claims description 3
- 229960001082 trimethoprim Drugs 0.000 claims description 3
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 claims description 2
- 239000007888 film coating Substances 0.000 claims description 2
- 238000009501 film coating Methods 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 238000002474 experimental method Methods 0.000 description 9
- 229910052593 corundum Inorganic materials 0.000 description 8
- 229910001845 yogo sapphire Inorganic materials 0.000 description 8
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000012795 verification Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明提供一种单晶PERC晶硅电池背钝化制备工艺及PERC太阳能电池,该方法包括背钝化:在单晶硅片的背面,使用沉积氧化铝工艺,采用ALD法沉积一定厚度的氧化铝膜,其中,工艺温度在160‑180℃之间,恒温时间在380‑420秒之间,微导圈数在20‑30圈之间,每圈厚度在0.15‑0.2nm之间,TMA/O3氮气流量在20±2/18±2的范围内。本发明提供了单晶PERC晶硅电池背钝化制备工艺及PERC太阳能电池,与现有产线的工艺匹配性好,有效提高电池转换效率,缩短流程,操作简单,有效降低成本、提高产能,非常值得推广。
Description
技术领域
本发明涉及晶硅电池制备技术领域,具体为一种单晶PERC晶硅电池背钝化制备工艺及PERC太阳能电池。
背景技术
在传统电池结构中光电子的复合限制效率的提升,间接导致生产及下游制造成本增高,PERC晶硅电池则将PN结间的电势差最大化,降低了电子的复合,保证电流稳定,能够提升电池片的光电转换效率。
单晶PERC电池在背钝化膜的存在,增强了电池对入射长波段光波吸收。背钝化膜的钝化效果可通过电池对长波的光谱响应来反映。此外,少数载流子的少子寿命也可以用来衡量太阳电池背面的钝化效果。因此,可通过提高长波的光谱响应和提高少子寿命来改善背钝化膜的钝化效果,从而进一步提高太阳电池的转换效率。PERC单晶硅太阳电池背面氧化铝膜不同膜厚时波长与量子效率是有不一样的表现。
但是单晶PERC晶硅电池现使用的背钝化设备为微导,受制于纯水工艺绕镀比较明显,正面氧化铝绕度严重影响至外观降级。目前通过导入臭氧工艺,解决绕镀问题,因只有背面氧化铝匹配常规PERC电池浆料烧结及材料等工艺设备有更大选择,但是采用此方法的效率提升优化空间很狭窄,很长时间行业发展量产效率未有大的提升,急需作出改进。
因此,特别需要一种单晶PERC晶硅电池背钝化制备工艺,以解决上述现有存在的问题。
发明内容
本发明的目的在于提供一种单晶PERC晶硅电池背钝化制备工艺,以解决上述背景技术中提出的问题。
为实现上述目的,本发明提供如下技术方案:
一种单晶PERC晶硅电池背钝化制备工艺,该方法包括以下步骤:
制绒:对硅片进行清洗后,去除损伤层并进行表面抛光、单面制绒,形成金字塔绒面;
扩散:在硅片结构层上采用扩散工艺制备PN结,得到PN结层;
一次退火:通过热氧增加正面氧化层厚度,提高碱抛时对MARK点及SE区域的保护作用;
SE:SE晶体硅太阳能电池,即在电极的金属栅线与硅片接触部位进行重掺杂,在电极之间位置进行轻掺杂;
去磷硅玻璃:硅片在扩散工艺后电池边缘会形成有PN结,以及在扩散过程中电池表面形成一层很厚的磷硅玻璃,通过HF浸泡,并进行时间控制,去除周边的PN结和磷硅玻璃;
碱抛:对硅片背面使用碱抛光工艺;
二次退火:退火炉中高温通氧,在硅片表面,硅高温下与氧气形成氧化硅,增强对钝化表面悬挂键;
背钝化:在单晶硅片的背面,使用沉积氧化铝工艺,采用ALD法沉积一定厚度的氧化铝膜,其中,工艺温度在160-180℃之间,恒温时间在380-420秒之间,微导圈数在20-30圈之间,每圈厚度在0.15-0.2nm之间,TMA/O3氮气流量在20±2/18±2的范围内;
镀膜:先镀正膜,后镀背膜,正膜和背膜沉积氮化硅使用的原料为NH3和SIH4,制作方法中通过调整NH3和SIH4流量配比各层不同的折射率激光;
激光开槽:背面激光局部开槽;
印刷:丝网印刷形成背电极、背电场和正电极;
烧结:烧结使金属与硅片形成良好的欧姆接触;
电注入:直接反向注入直流电,使硅体中的氢改变带电状态,以抑制太阳能的光致衰减效应,钝化衰减态的硼氧复合体;
测试分选:测试电池的电性能,并进行分选。
优选的,在步骤背钝化中,所述工艺温度为170℃。
优选的,在步骤背钝化中,所述恒温时间为400秒。
优选的,在步骤背钝化中,所述微导圈数为25圈,每圈厚度为0.18nm。
优选的,在步骤背钝化中,所述TMA/O3氮气流量为20/18。
优选的,所述步骤背钝化中的沉积氧化铝工艺,具体包括:
先氮气鼓泡通TMA,此时氮气流量是20sccm,此过程中脉冲反应2s,吹扫9s,使得硅片表面沉积一层TMA,然后用氮气鼓泡通O3与TMA反应,此时氮气流量是18sccm,此过程中脉冲反应6s,吹扫9s,生成单层氧化铝。
一种PERC太阳能电池,采用上述所述的一种单晶PERC晶硅电池背钝化制备工艺。
与现有技术相比,本发明的有益效果是:
1、本发明与产线现有设备及工艺匹配性好,经本发明工艺参数得到的PERC电池背面较常规PERC更有利于钝化以及背面接触,提高了电池的少子寿命及开路电压制,背面形成有梯度镜面增加了长波的内反射,使电池的少数载流子收集增多,增加了短路电流,进而提高电池转换效率;
2、本发明的工艺制备步骤简单、工艺稳定易于控制;
3、本发明的单晶PERC晶硅电池转化效率有0.03%-0.05%提升,在大批量使用的情况下,可以有效提高整体的转化率,性价比更高;
4、本发明能够降低单片电池片的TMA耗量,降低成本;
5、本发明能够节约工艺流程的时间,进而提高微导整体产能。
本发明提供了单晶PERC晶硅电池背钝化制备工艺,与现有产线的工艺匹配性好,有效提高电池转换效率,缩短流程,操作简单,有效降低成本、提高产能,非常值得推广。
附图说明
图1为本发明的单晶PERC晶硅电池背钝化制备工艺方法流程示意图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
实施例:
请参阅图1,本发明提供一种技术方案:
一种单晶PERC晶硅电池背钝化制备工艺,该方法包括以下步骤:
S101、制绒:对硅片进行清洗后,去除损伤层并进行表面抛光、单面制绒,形成金字塔绒面;
S102、扩散:在硅片结构层上采用扩散工艺制备PN结,得到PN结层;
S103、一次退火:通过热氧增加正面氧化层厚度,提高碱抛时对MARK点及SE区域的保护作用;
S104、SE:SE晶体硅太阳能电池,即在电极的金属栅线与硅片接触部位进行重掺杂,在电极之间位置进行轻掺杂;
S105、去磷硅玻璃:硅片在扩散工艺后电池边缘会形成有PN结,以及在扩散过程中电池表面形成一层很厚的磷硅玻璃,通过HF浸泡,并进行时间控制,去除周边的PN结和磷硅玻璃;
S106、碱抛:对硅片背面使用碱抛光工艺;
S107、二次退火:退火炉中高温通氧,在硅片表面,硅高温下与氧气形成氧化硅,增强对钝化表面悬挂键;
S108、背钝化:在单晶硅片的背面,使用沉积氧化铝工艺,采用ALD法沉积一定厚度的氧化铝膜,其中,工艺温度在160-180℃之间,恒温时间在380-420秒之间,微导圈数在20-30圈之间,每圈厚度在0.15-0.2nm之间,TMA/O3氮气流量在20±2/18±2的范围内;
S109、镀膜:先镀正膜,后镀背膜,正膜和背膜沉积氮化硅使用的原料为NH3和SIH4,制作方法中通过调整NH3和SIH4流量配比各层不同的折射率激光;
S110、激光开槽:背面激光局部开槽;
S111、印刷:丝网印刷形成背电极、背电场和正电极;
S112、烧结:烧结使金属与硅片形成良好的欧姆接触;
S113、电注入:直接反向注入直流电,使硅体中的氢改变带电状态,以抑制太阳能的光致衰减效应,钝化衰减态的硼氧复合体;
S114、测试分选:测试电池的电性能,并进行分选。
作为一个优选,在步骤背钝化中,所述工艺温度为170℃。
作为一个优选,在步骤背钝化中,所述恒温时间为400秒。
作为一个优选,在步骤背钝化中,所述微导圈数为25圈,每圈厚度为0.18nm。
作为一个优选,在步骤背钝化中,所述TMA/O3氮气流量为20/18。
作为一个优选,所述步骤背钝化中的沉积氧化铝工艺,具体包括:
先氮气鼓泡通TMA,此时氮气流量是20sccm,此过程中脉冲反应2s,吹扫9s,使得硅片表面沉积一层TMA,然后用氮气鼓泡通O3与TMA反应,此时氮气流量是18sccm。
为了得到步骤S108中背钝化工艺的最佳工艺参数,进行了大量实验,以下选取最有代表性的几组实验数据加以说明:
实验1:保持其他无关因素不变,只改变工艺温度作为变量,设计不同的工艺温度进行对比验证,测试各项数值如下:
实验项目 | 数量 | Eta | Uoc | Isc | FF | Rs | Rsh | Irevmax |
工艺温度140℃ | 2432 | 22.765 | 684.2 | 10.369 | 80.87 | 0.0021 | 958 | 0.07 |
工艺温度170℃ | 2350 | 22.793 | 683.3 | 10.372 | 81.05 | 0.0022 | 733 | 0.07 |
工艺温度190℃ | 2199 | 22.790 | 682.6 | 10.383 | 81.04 | 0.0019 | 677 | 0.09 |
工艺温度270℃ | 2256 | 22.789 | 684.4 | 10.373 | 80.90 | 0.0021 | 833 | 0.08 |
上述及以下表格中,实验项目一行中的“Eta”、“Uoc”、“Isc”、“FF”、“Rs”、“Rsh”和“Irevmax”分别是“工艺效率”、“电压”、“电流”、“填充因子”、“串联电阻”、“并联电阻”和“漏电”的缩写。
由实验数据可知,对比当前产线通常为270℃的工艺温度条件,将工艺温度调整至170℃时的工艺效率最优,相比当前产线可提高0.004%的工艺效率。
实验2:保持工艺温度为170℃,其他无关因素不变,只改变工艺前期恒温时间作为变量,设计不同的恒温时间进行对比验证,测试各项数值如下:
实验项目 | 数量 | Eta | Uoc | Isc | FF | Rs | Rsh | Irevmax |
恒温时间300S | 2078 | 22.721 | 682.3 | 10.357 | 81.02 | 0.0019 | 643 | 0.10 |
恒温时间350S | 2021 | 22.747 | 682.6 | 10.365 | 81.02 | 0.0020 | 621 | 0.11 |
恒温时间400S | 2039 | 22.759 | 682.3 | 10.369 | 81.07 | 0.0020 | 525 | 0.15 |
恒温时间450S | 1025 | 22.748 | 683.6 | 10.378 | 80.81 | 0.0019 | 561 | 0.11 |
由实验数据可知,对比当前产线通常为450s的恒温时间,将恒温时间调整至400s时的工艺效率最优,在工艺温度为170℃、恒温时间为400s的条件下,相比当前产线可提高0.011%的工艺效率,对设备的产能利用率有极大的改观。
实验3:保持工艺温度为170℃、恒温时间为400s,其他无关因素不变,只改变微导圈数作为变量,现有工艺中,每圈厚度在0.15-0.2nm之间,此实验采用的厚度为每圈0.18nm,鉴于微导圈数比厚度在工艺生产上更加直观,本实验设计不同的微导圈数进行对比验证,测试各项数值如下:
实验项目 | 数量 | Eta | Uoc | Isc | FF | Rs | Rsh | Irevmax |
20cycle | 2646 | 22.733 | 682.7 | 10.385 | 80.8 | 2.1 | 1678 | 0.03 |
25cycle | 2782 | 22.762 | 683.3 | 10.389 | 80.80 | 2.2 | 1645 | 0.04 |
30cycle | 2757 | 22.740 | 683.3 | 10.407 | 80.58 | 2.3 | 1422 | 0.03 |
35cycle | 2777 | 22.752 | 682.5 | 10.398 | 80.79 | 2.1 | 1649 | 0.03 |
由实验数据可知,对比当前产线通常为30圈的微导圈数,将微导圈数调整至25圈时的工艺效率最优,在工艺温度为170℃、恒温时间为450s、微导圈数为25圈(即沉积Al2O3厚度为4.5nm)的条件下,相比当前产线可提高0.022%的工艺效率。
这种现象是由于在实际生产中硅片表面粗糙造成的,粗糙的表面造成Al2O3薄膜分布不均匀,局部区域的Al2O3薄膜厚度过低,从而影响了钝化效果,随着薄膜整体厚度的增加,Al2O3薄膜的覆盖率逐步增加,使得Al2O3薄膜的表面钝化作用体现的更加明显。
本实验验证Al2O3厚度对硅片少子寿命,这里通过沉积Al2O3圈数不同制备了不同厚度的Al2O3薄膜,本防发明所涉及实验中背膜氮化硅膜厚度为95nm,折射率为2.15,正面氮化硅膜厚度为70nm,折射率为2.14。当臭氧沉积为25圈时,使用SENTECH SE800型椭偏仪测试Al2O3的厚度为4.5nm,假定Al2O3薄膜生长速率恒定,通过调整镀膜时间来调整Al2O3薄膜厚度。通过实验测试发现氧化铝镀膜工艺为25圈厚度时烧结前后的少子寿命增加幅度最大,少子寿命的增加量随Al2O3薄膜厚度而变化。
实验4:保持工艺温度为170℃、恒温时间为400s、微导圈数为25圈(即沉积Al2O3厚度为4.5nm),其他无关因素不变,只改变TMA/O3氮气流量作为变量,设计不同的TMA/O3氮气流量进行对比验证,测试各项数值如下:
由实验数据可知,对比当前产线,将TMA/O3氮气流量调整至20/18时的工艺效率最优,在工艺温度为170℃、恒温时间为450s、微导圈数为25圈(即沉积Al2O3厚度为4.5nm)、TMA/O3氮气流量为20/18的条件下,相比当前产线可提高0.032%的工艺效率。
此工艺配方下Al2O3成膜致密性更好,钝化效果好,短路电流提高、开压提高较大,增效特别显著,通过烧结前后的少子寿命变化量也对应验证,在以上制备的样品中,Al2O3薄膜在不同工艺匹配下,少子寿命在烧结前后的增加量也有差异。
通过以上大量的实验数据,可以得出本申请步骤S108中背钝化工艺的最佳工艺参数,即:工艺温度为170℃,恒温时间400s,TMA脉冲时间2s,吹扫时间9s,工艺过程氮气流量20sccm,臭氧脉冲时间6s,吹扫时间9s,工艺过程氮气流量18sccm,微导圈数为25圈(即沉积Al2O3厚度为4.5nm),此技术方案可累计提高0.032%的工艺效率,在大批量投产使用中,可显著提高产量,缩短生产成本,提高产品利润。
本发明还提供了一种PERC太阳能电池,采用上述所述的一种单晶PERC晶硅电池背钝化制备工艺。
本发明实施例的PERC太阳能电池的实现方法和产品特性可参考上述任一项对单晶PERC晶硅电池背钝化制备工艺的描述,在此不再赘述。
尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由所附权利要求及其等同物限定。
Claims (7)
1.一种单晶PERC晶硅电池背钝化制备工艺,其特征在于:该方法包括以下步骤:
制绒:对硅片进行清洗后,去除损伤层并进行表面抛光、单面制绒,形成金字塔绒面;
扩散:在硅片结构层上采用扩散工艺制备PN结,得到PN结层;
一次退火:通过热氧增加正面氧化层厚度,提高碱抛时对MARK点及SE区域的保护作用;
SE:SE晶体硅太阳能电池,即在电极的金属栅线与硅片接触部位进行重掺杂,在电极之间位置进行轻掺杂;
去磷硅玻璃:硅片在扩散工艺后电池边缘会形成有PN结,以及在扩散过程中电池表面形成一层很厚的磷硅玻璃,通过HF浸泡,并进行时间控制,去除周边的PN结和磷硅玻璃;
碱抛:对硅片背面使用碱抛光工艺;
二次退火:退火炉中高温通氧,在硅片表面,硅高温下与氧气形成氧化硅,增强对钝化表面悬挂键;
背钝化:在单晶硅片的背面,使用沉积氧化铝工艺,采用ALD法沉积一定厚度的氧化铝膜,其中,工艺温度在160-180℃之间,恒温时间在380-420秒之间,微导圈数在20-30圈之间,每圈厚度在0.15-0.2nm之间,TMA/O3氮气流量在20±2/18±2的范围内;
镀膜:先镀正膜,后镀背膜,正膜和背膜沉积氮化硅使用的原料为NH3和SIH4,制作方法中通过调整NH3和SIH4流量配比各层不同的折射率激光;
激光开槽:背面激光局部开槽;
印刷:丝网印刷形成背电极、背电场和正电极;
烧结:烧结使金属与硅片形成良好的欧姆接触;
电注入:直接反向注入直流电,使硅体中的氢改变带电状态,以抑制太阳能的光致衰减效应,钝化衰减态的硼氧复合体;
测试分选:测试电池的电性能,并进行分选。
2.根据权利要求1所述的单晶PERC晶硅电池背钝化制备工艺,其特征在于:在步骤背钝化中,所述工艺温度为170℃。
3.根据权利要求1所述的单晶PERC晶硅电池背钝化制备工艺,其特征在于:在步骤背钝化中,所述恒温时间为400秒。
4.根据权利要求1所述的单晶PERC晶硅电池背钝化制备工艺,其特征在于:在步骤背钝化中,所述微导圈数为25圈,每圈厚度为0.18nm。
5.根据权利要求1所述的单晶PERC晶硅电池背钝化制备工艺,其特征在于:在步骤背钝化中,所述TMA/O3氮气流量为20/18。
6.根据权利要求1所述的单晶PERC晶硅电池背钝化制备工艺,其特征在于:所述步骤背钝化中的沉积氧化铝工艺,具体包括:
先氮气鼓泡通TMA,此时氮气流量是20sccm,此过程中脉冲反应2s,吹扫9s,使得硅片表面沉积一层TMA,然后用氮气鼓泡通O3与TMA反应,此时氮气流量是18sccm,此过程中脉冲反应6s,吹扫9s,生成单层氧化铝。
7.一种PERC太阳能电池,其特征在于:采用权利要求1-6任意一项所述的一种单晶PERC晶硅电池背钝化制备工艺。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011407347.XA CN112563370A (zh) | 2020-12-04 | 2020-12-04 | 单晶perc晶硅电池背钝化制备工艺及perc太阳能电池 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011407347.XA CN112563370A (zh) | 2020-12-04 | 2020-12-04 | 单晶perc晶硅电池背钝化制备工艺及perc太阳能电池 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN112563370A true CN112563370A (zh) | 2021-03-26 |
Family
ID=75048122
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202011407347.XA Pending CN112563370A (zh) | 2020-12-04 | 2020-12-04 | 单晶perc晶硅电池背钝化制备工艺及perc太阳能电池 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112563370A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113241389A (zh) * | 2021-04-25 | 2021-08-10 | 天津爱旭太阳能科技有限公司 | 提高光电转换效率的perc电池的制作方法和电池 |
CN116445086A (zh) * | 2022-01-06 | 2023-07-18 | 松山湖材料实验室 | 一种抛光添加剂、抛光液、抛光方法和电池的制备方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140000686A1 (en) * | 2012-06-29 | 2014-01-02 | Applied Materials, Inc. | Film stack and process design for back passivated solar cells and laser opening of contact |
CN203573989U (zh) * | 2013-09-25 | 2014-04-30 | 北京七星华创电子股份有限公司 | 有三氧化二铝钝化膜的晶体硅 |
CN104201214A (zh) * | 2014-08-21 | 2014-12-10 | 广东爱康太阳能科技有限公司 | 一种背面钝化太阳能电池及其制备方法 |
US20170294545A1 (en) * | 2015-07-09 | 2017-10-12 | Csi Cells Co., Ltd | A process for preparing passivated emitter rear contact (perc) solar cells |
CN109087956A (zh) * | 2018-07-16 | 2018-12-25 | 横店集团东磁股份有限公司 | 一种双面perc太阳能电池结构及其制备工艺 |
CN109728104A (zh) * | 2018-12-19 | 2019-05-07 | 盐城阿特斯协鑫阳光电力科技有限公司 | 电池片钝化层中间体、太阳能电池片及其制备方法 |
CN109994553A (zh) * | 2019-04-30 | 2019-07-09 | 通威太阳能(成都)有限公司 | 一种三层介电钝化膜perc太阳电池及制作工艺 |
-
2020
- 2020-12-04 CN CN202011407347.XA patent/CN112563370A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140000686A1 (en) * | 2012-06-29 | 2014-01-02 | Applied Materials, Inc. | Film stack and process design for back passivated solar cells and laser opening of contact |
CN203573989U (zh) * | 2013-09-25 | 2014-04-30 | 北京七星华创电子股份有限公司 | 有三氧化二铝钝化膜的晶体硅 |
CN104201214A (zh) * | 2014-08-21 | 2014-12-10 | 广东爱康太阳能科技有限公司 | 一种背面钝化太阳能电池及其制备方法 |
US20170294545A1 (en) * | 2015-07-09 | 2017-10-12 | Csi Cells Co., Ltd | A process for preparing passivated emitter rear contact (perc) solar cells |
CN109087956A (zh) * | 2018-07-16 | 2018-12-25 | 横店集团东磁股份有限公司 | 一种双面perc太阳能电池结构及其制备工艺 |
CN109728104A (zh) * | 2018-12-19 | 2019-05-07 | 盐城阿特斯协鑫阳光电力科技有限公司 | 电池片钝化层中间体、太阳能电池片及其制备方法 |
CN109994553A (zh) * | 2019-04-30 | 2019-07-09 | 通威太阳能(成都)有限公司 | 一种三层介电钝化膜perc太阳电池及制作工艺 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113241389A (zh) * | 2021-04-25 | 2021-08-10 | 天津爱旭太阳能科技有限公司 | 提高光电转换效率的perc电池的制作方法和电池 |
CN116445086A (zh) * | 2022-01-06 | 2023-07-18 | 松山湖材料实验室 | 一种抛光添加剂、抛光液、抛光方法和电池的制备方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN111192935B (zh) | 一种管式perc太阳能电池背钝化结构及其制备方法 | |
CN109004038B (zh) | 太阳能电池及其制备方法和光伏组件 | |
CN110854240A (zh) | Perc电池及其制备方法 | |
CN112563370A (zh) | 单晶perc晶硅电池背钝化制备工艺及perc太阳能电池 | |
WO2023216628A1 (zh) | 异质结太阳电池、其制备方法及发电装置 | |
CN110571302A (zh) | 一种n型晶体硅电池的制备方法 | |
WO2023202079A1 (zh) | 太阳电池的制备方法、太阳电池 | |
CN102199760A (zh) | 一种双层氮化硅减反膜的制作方法 | |
WO2023202132A1 (zh) | 太阳电池及其制备方法 | |
CN111416002A (zh) | 一种电池背面氮化硅膜层、perc电池及制备方法 | |
CN117199186B (zh) | 一种N-TOPCon电池的制作方法 | |
CN110571303A (zh) | 一种p型晶体硅电池的制备方法 | |
CN212625596U (zh) | 太阳能电池 | |
CN110534614B (zh) | 一种p型晶体硅电池的制备方法 | |
CN102244109B (zh) | 一种晶硅太阳电池减反射膜及其制备方法 | |
CN210668401U (zh) | 一种硅基叠层双面太阳电池 | |
CN210956692U (zh) | Perc电池 | |
CN218602440U (zh) | 新型异质结电池 | |
CN110965044A (zh) | 降低perc电池电致衰减的介质钝化膜及其制备方法 | |
CN109360866A (zh) | 一种三层氮化硅薄膜的制备方法 | |
CN112447863B (zh) | 一种太阳能电池及其制备方法 | |
CN110943146B (zh) | 一种perc太阳能电池的镀膜方法、制作方法及perc太阳能电池 | |
CN209880634U (zh) | 太阳能电池背面钝化结构 | |
CN109887841B (zh) | 一种perc电池背面抛光工艺 | |
CN211507646U (zh) | 改善管式perc太阳能电池边缘绕镀色差的正面复合膜 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210326 |