CN112531126B

CN112531126B - Light emitting device

Info

Publication number: CN112531126B
Application number: CN202011284314.0A
Authority: CN
Inventors: 谢宗錞
Original assignee: AU Optronics Corp
Current assignee: AU Optronics Corp
Priority date: 2020-04-28
Filing date: 2020-11-17
Publication date: 2023-10-31
Anticipated expiration: 2040-11-17
Also published as: TW202141826A; TWI725829B; CN112531126A

Abstract

The invention discloses a light-emitting device, which comprises a substrate and a first sub-pixel. The first sub-pixel is provided with a first transparent area and a first non-transparent area, and comprises a switching element, a dielectric layer, an organic light emitting diode and an encapsulation layer. The switch element is located on the substrate and in the first non-transparent region. The dielectric layer is disposed on the switching element. The organic light emitting diode is located on the dielectric layer and is electrically connected to the switching element. The packaging layer comprises a first insulating layer, a second insulating layer and a third insulating layer which are stacked in sequence. The first insulating layer is closer to the organic light emitting diode than the third insulating layer. The refractive index of the third insulating layer is smaller than that of the second insulating layer. The refractive index of the second insulating layer is smaller than that of the first insulating layer.

Description

Light emitting device

Technical Field

The present invention relates to a light emitting device, and more particularly, to a light emitting device including a light emitting diode.

Background

The organic light emitting display device has the advantages of self luminescence, wide viewing angle, power saving, simple process, low cost, wide operation temperature, high response speed, full color and the like, so that the organic light emitting display device has great potential, and is expected to become the main stream of the next generation of flat panel display devices.

With the progress of technology, many manufacturers are working on developing related technologies for transparent organic light emitting display devices. The transparent organic light emitting display device is made to look transparent by the combination of the transmissive region and the light emitting region in the pixel, and thus, a user can see the background behind the display device through the organic light emitting display device. Taking a mobile phone as an example, a full screen is a current trend, however, in a mobile phone with a front lens, the camera lens must be buried under the screen, and the display device above the lens needs to be transparent.

Disclosure of Invention

The invention provides a light emitting device capable of increasing the light emitting efficiency of a sub-pixel.

The invention provides a light-emitting device, which comprises a substrate and a first sub-pixel. The first sub-pixel is provided with a first transparent area and a first non-transparent area, and comprises a switching element, a dielectric layer, an organic light emitting diode and an encapsulation layer. The switch element is located on the substrate and in the first non-transparent region. The dielectric layer is disposed on the switching element. The organic light emitting diode is located on the dielectric layer and is electrically connected to the switching element. The encapsulation layer is positioned on the organic light emitting diode and positioned in the first transparent region and the first non-transparent region. The packaging layer comprises a first insulating layer, a second insulating layer and a third insulating layer which are stacked in sequence. The first insulating layer is closer to the organic light emitting diode than the third insulating layer. The refractive index of the third insulating layer is smaller than that of the second insulating layer. The refractive index of the second insulating layer is smaller than that of the first insulating layer.

Drawings

Fig. 1A is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention.

Fig. 1B is a schematic top view of the first subpixel of fig. 1A.

Fig. 2 is a schematic top view of a light emitting device according to an embodiment of the invention.

Fig. 3 is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention.

Fig. 4 is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention.

Fig. 5 is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention.

Fig. 6 is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention.

Fig. 7 is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention.

Fig. 8 is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention.

Fig. 9 is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention.

Fig. 10 is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention.

FIG. 11 is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention.

Fig. 12 is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention.

Fig. 13A is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention.

Fig. 13B is a schematic top view of the first subpixel of fig. 13A.

Fig. 14 is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention.

Fig. 15 is a schematic top view of a pixel according to an embodiment of the invention.

Wherein, the reference numerals:

1 luminous device

10 first sub-pixel

20 second sub-pixel

30 third sub-pixel

100 switching element

110 dielectric layer

112 passivation layer

114 interlayer dielectric layer

120 organic light emitting diode

122 first electrode

124 organic light-emitting layer

126 second electrode

130 packaging layer

131 first insulating layer

132 second insulating layer

133 third insulating layer

134 fourth insulating layer

135 fifth insulating layer

136 sixth insulating layer

140 pixel definition layer

150 spacer element

C groove

Cover layer CL

DH, diversion hole

H1 height of

L light ray

M: microstructure

NTA1 first non-transparent region

NTA2 second non-transparent region

NTA3 third non-transparent region

O1, O2, OP, TO opening

PL planar layer

SB base plate

TA1 first transparent region

TA2 second transparent region

TA3 third transparent region

TH: through hole

Detailed Description

Various embodiments of the present invention are disclosed in the following drawings, in which numerous practical details are set forth in the following description for purposes of clarity. However, it should be understood that these practical details are not to be taken as limiting the invention. That is, in some embodiments of the invention, these practical details are unnecessary. Moreover, for the sake of simplicity of the drawing, some existing structures and elements are omitted or are shown in a simplified schematic form in the drawing.

Throughout the specification, the same reference numerals refer to the same or similar elements. In the drawings, the thickness of layers, films, panels, regions, etc. are exaggerated for clarity. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element or intervening elements may also be present between the element and the other element. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no other elements present between the element and the another element. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, two elements may be "electrically connected" or "coupled" to each other such that other elements are present between the two elements.

It will be understood that, although the terms "first" and "second," etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section.

Fig. 1A is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention. Fig. 1B is a schematic top view of the first subpixel of fig. 1A.

Referring to fig. 1A and 1B, the first sub-pixel 10 has a first transparent area TA1 and a first non-transparent area NTA1. In some embodiments, no opaque element such as a metal wire is disposed in the first transparent area TA1, and no opaque element such as a metal wire is disposed in the first non-transparent area NTA1.

The first sub-pixel 10 includes a switching element 100, a dielectric layer 110, an organic light emitting diode 120, and an encapsulation layer 130. In this embodiment, the first sub-pixel 10 further includes a pixel defining layer 140 and a Spacer (Spacer) 150.

The switching element 100 is disposed on the substrate SB and in the first non-transparent region NTA1. In some embodiments, the switching element 100 is a thin film transistor, and includes a gate, a source, a drain, and a semiconductor channel layer. The grid electrode is electrically connected to the scanning line, and the source electrode is electrically connected to the data line. In some embodiments, the substrate SB may be a rigid substrate. The substrate SB is, for example but not limited to, a glass substrate or a sapphire substrate or other suitable substrate material (e.g., quartz, opaque/reflective material (e.g., conductive material, metal, wafer, ceramic or other suitable material), a combination of at least two of the foregoing, or other suitable material). In some embodiments, the substrate SB may be a flexible substrate, for example, the material of the substrate SB includes Polyamide (PA), polyimide (PI), polymethyl methacrylate (Poly (methyl methacrylate), PMMA), polyethylene naphthalate (polyethylene naphthalate, PEN), polyethylene terephthalate (polyethylene terephthalate, PET), fiberglass reinforced plastic (fiber reinforced plastics, FRP), polyetheretherketone (PEEK), epoxy, or other suitable materials, or a combination of at least two of the foregoing, but is not limited thereto.

The dielectric layer 110 is located on the switching element 100. The dielectric layer 110 is a single-layer or multi-layer structure. In the present embodiment, the dielectric layer 110 includes a passivation layer 112 and an interlayer dielectric layer 114, wherein the interlayer dielectric layer 114 is located between the passivation layer 112 and the substrate SB. In some embodiments, the material of passivation layer 112 and interlayer dielectric layer 114 comprises an inorganic material (e.g., silicon oxide, silicon nitride, silicon oxynitride, other suitable materials, or a stack of at least two of the foregoing), an organic material (e.g., polyesters, polyolefins, polypropylenes, polycarbonates, polyalkylene oxides, polystyrenes, polyethers, polyketones, polyols, polyaldehydes, or other suitable materials, or combinations thereof), or other suitable materials, or combinations thereof.

The organic light emitting diode 120 is disposed on the dielectric layer 110 and electrically connected to the switching element 100. The organic light emitting diode 120 includes a first electrode 122, an organic light emitting layer 124, and a second electrode 126. The first electrode 122 is disposed on the dielectric layer 110 and electrically connected to the switching element 100. In the present embodiment, the first electrode 122 is electrically connected to the drain of the switching element 100 through the through hole TH. The through holes TH penetrate through the passivation layer 112 and the interlayer dielectric layer 114, for example. In the present embodiment, the first electrode 122 and the through hole TH are located in the first non-transparent region NTA1.

The organic light emitting layer 124 is positioned on the first electrode 122. In this embodiment, the pixel defining layer 140 is disposed on the dielectric layer 110 and exposes the first electrode 122. The organic light emitting layer 124 is disposed in the opening O1 of the pixel defining layer 140 and contacts the first electrode 122. In the embodiment, the organic light emitting layer 124 extends from the first non-transparent region NTA1 to the first transparent region TA1, but the invention is not limited thereto.

In some embodiments, the method of forming the organic light emitting layer 124 includes an Ink-jet printing process (IJP), evaporation, or other suitable method. In the present embodiment, the organic light emitting layer 124 is disposed in the first non-transparent region NTA1 and the first transparent region TA1 at the same time, which can have a higher process margin than the process margin when the organic light emitting layer 124 is disposed in the first non-transparent region NTA1.

The second electrode 126 is positioned on the organic light emitting layer 124. In the present embodiment, the second electrode 126 is disposed in the opening O1 of the pixel defining layer 140 and contacts the organic light emitting layer 124. In this embodiment, the material of the second electrode 126 includes a transparent conductive material. In the present embodiment, the second electrode 126 extends from the first non-transparent region NTA1 to the first transparent region TA1, but the invention is not limited thereto.

In some embodiments, the spacer 150 is disposed on the pixel defining layer 140, and the second electrode 126 and the organic light emitting layer 124 are disposed in the opening OP of the spacer 150. The opening OP of the spacer 150 overlaps the opening O1 of the pixel defining layer 140. In some embodiments, the spacers 150 may be Black matrix (Black matrix).

The planarization layer PL covers the organic light emitting diode 120 and is disposed in the opening O1 of the pixel defining layer 140 and in the opening OP of the spacer 150.

The encapsulation layer 130 is located on the organic light emitting diode 120. In the present embodiment, the encapsulation layer 130 is located on the planarization layer PL, and the encapsulation layer 130 is located in the opening OP of the spacer 150. The encapsulation layer 130 is located in the first transparent area TA1 and in the first non-transparent area NTA1. The refractive index of the encapsulation layer 130 decreases as it is away from the organic light emitting diode 120. In the present embodiment, the encapsulation layer 130 is a multi-layer structure, and includes a first insulating layer 131, a second insulating layer 132, and a third insulating layer 133 stacked in order. The first insulating layer 131 is closer to the organic light emitting diode 120 than the third insulating layer 133. The refractive index N3 of the third insulating layer 133 is smaller than the refractive index N2 of the second insulating layer 132. The refractive index N2 of the second insulating layer 132 is smaller than the refractive index N1 of the first insulating layer 131. In some embodiments, the refractive index of the planar layer PL is smaller than the refractive index N1 of the first insulating layer 131.

In the present embodiment, the encapsulation layer 130 includes three layers, but the invention is not limited thereto. The number of layers of the encapsulation layer 130 can be adjusted according to the actual requirement, and the transmittance of the sub-pixels can be changed by adjusting the number of layers of the encapsulation layer 130. In some embodiments, the encapsulation layer 130 may be a three-layer structure or more.

The organic light emitting diode 120 emits the light L at the overlapping portion of the first electrode 122, the organic light emitting layer 124 and the second electrode 126, and the light L emitted from the organic light emitting diode 120 can be refracted from the first non-transparent area NTA1 to the first transparent area TA1 due to the decreasing refractive index of the encapsulation layer 130 with increasing distance from the organic light emitting diode 120. Therefore, the light emitting efficiency of the first sub-pixel 10 can be increased.

The cover layer CL is located on the encapsulation layer 130, and the cover layer CL is located in the first transparent area TA1 and the first non-transparent area NTA1. In some embodiments, the refractive index of the encapsulation layer 130 is less than the refractive index N1 of the capping layer CL. The surface of the cover layer CL is provided with a plurality of microstructures M. The microstructure M is located in at least one of the first transparent region TA1 and the first non-transparent region NTA1. In the embodiment, the microstructures M are disposed in the first transparent area TA1 and the first non-transparent area NTA1, but the invention is not limited thereto. In other embodiments, the microstructure M is located in only one of the first transparent region TA1 and the first non-transparent region NTA1.

In some embodiments, the light L emitted by the organic light emitting diode 120 leaves the cover layer CL from the position where the cover layer CL has the microstructure M. In some embodiments, it is more difficult for the light ray L to leave the cover layer CL from the position where the cover layer CL is not provided with the microstructures M. For example, where the cover layer CL is not provided and the microstructure M is not provided, the light L is totally reflected at the surface of the cover layer CL. By adjusting the density (number/unit area) of the microstructures M, the amount of light L that passes through the cover layer CL can be controlled.

In this embodiment, the microstructure M is an arc-shaped structure with a radius of 100nm to 400nm, and the height H1 of the microstructure M is about 90nm to 270nm.

In the present embodiment, the density (number/unit area) of the microstructures M in the first transparent area TA1 is about equal to the density of the microstructures M in the first non-transparent area NTA1, but the invention is not limited thereto. In other embodiments, the density (number/unit area) of the microstructures M in the first transparent area TA1 is smaller than that of the microstructures M in the first non-transparent area NTA1, so that the first transparent area TA1 has better penetration effect. In other embodiments, the density (number/unit area) of the microstructures M in the first transparent area TA1 is greater than that of the microstructures M in the first non-transparent area NTA1, so that the sub-pixel 10 has better display effect. In some embodiments, the density of the microstructures M may be adjusted according to the position of the first sub-pixel 10 in the light emitting device.

In some embodiments, the materials of the flat layer PL, the second insulating layer 132 and the capping layer CL include inorganic materials, and the method of forming the flat layer PL, the second insulating layer 132 and the capping layer CL is, for example, chemical vapor deposition (Chemical vapor deposition, CVD). In some embodiments, the materials of the first insulating layer 131 and the third insulating layer 133 include organic materials, and the method of forming the first insulating layer 131 and the third insulating layer 133 is, for example, coating, inkjet printing or other suitable processes.

Fig. 2 is a schematic top view of a light emitting device according to an embodiment of the invention. It should be noted that the embodiment of fig. 2 uses the element numbers and part of the contents of the embodiments of fig. 1A and 1B, where the same or similar elements are denoted by the same or similar numbers, and the description of the same technical contents is omitted. Reference may be made to the foregoing embodiments for description of omitted parts, which are not repeated here.

Referring to fig. 2, in the present embodiment, the light emitting device 1 includes a substrate SB, a first sub-pixel 10, a second sub-pixel 20, and a third sub-pixel 30. In the present embodiment, the display area of the light emitting device 1 includes a first area A1, a second area A2, and a third area A3. The first sub-pixel 10, the second sub-pixel 20 and the third sub-pixel 30 are respectively located in the first area A1, the second area A2 and the third area A3.

The first, second and third sub-pixels 10, 20 and 30 have similar structures, differing only in the size of the transparent and non-transparent regions. The area of the first transparent region TA1 of the first subpixel 10 is larger than the area of the second transparent region TA2 of the second subpixel 20, and the area of the second transparent region TA2 of the second subpixel 20 is larger than the area of the third transparent region TA3 of the third subpixel 30. The area of the non-first transparent region NTA1 of the first sub-pixel 10 is smaller than the area of the second non-transparent region NTA2 of the second sub-pixel 20, and the area of the second non-transparent region NTA2 of the second sub-pixel 20 is smaller than the area of the third non-transparent region NTA3 of the third sub-pixel 30.

Based on the above, the first, second and third regions A1, A2 and A3 of the light emitting device 1 may have different transmittance, respectively. In the present embodiment, the transmittance of the first area A1 is greater than the transmittance of the second area A2, and the transmittance of the second area A2 is greater than the transmittance of the third area A3.

Fig. 3 is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention. It should be noted that the embodiment of fig. 3 uses the element numbers and part of the contents of the embodiments of fig. 1A and 1B, where the same or similar elements are denoted by the same or similar numbers, and the description of the same technical contents is omitted. Reference may be made to the foregoing embodiments for description of omitted parts, which are not repeated here.

Referring to fig. 3, the pixel defining layer 140 includes an opening O1 and an opening O2. The opening O1 overlaps the first non-transparent region NTA1, and the opening O2 overlaps the first transparent region. The opening OP of the spacer 150 overlaps the opening O1 and the opening O2.

The first electrode 122 of the organic light emitting diode 120 and the organic light emitting layer 124 are located in the opening O1. The second electrode 126 of the organic light emitting diode 120 extends from the opening O1 to the opening O2.

Fig. 4 is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention. It should be noted that the embodiment of fig. 4 uses the element numbers and part of the content of the embodiment of fig. 3, where the same or similar numbers are used to denote the same or similar elements, and the description of the same technical content is omitted. Reference may be made to the foregoing embodiments for description of omitted parts, which are not repeated here.

Referring to fig. 4, the encapsulation layer 130 includes a first insulation layer 131, a second insulation layer 132, a third insulation layer 133, a fourth insulation layer 134, a fifth insulation layer 135, and a sixth insulation layer 156, which are sequentially stacked. In this embodiment, the top surface of the planar layer PL is not a planar surface (e.g., a surface recessed downward), and sequentially conformally forming the first insulating layer 131, the second insulating layer 132, the third insulating layer 133, the fourth insulating layer 134, the fifth insulating layer 135, and the sixth insulating layer 156 can reduce the degree of recessing of the top surface of the structure, thereby enabling the cover layer CL to be formed on a relatively planar surface.

Fig. 5 is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention. It should be noted that the embodiment of fig. 5 uses the element numbers and part of the content of the embodiment of fig. 4, where the same or similar numbers are used to denote the same or similar elements, and the description of the same technical content is omitted. Reference may be made to the foregoing embodiments for description of omitted parts, which are not repeated here.

Referring TO fig. 5, the dielectric layer 110 includes a passivation layer 112 and an interlayer dielectric layer 114, and the passivation layer 112 and the interlayer dielectric layer 114 have an opening TO located in the first transparent region TA1. In this embodiment, the opening TO penetrates the passivation layer 112 and the interlayer dielectric layer 114. The opening TO of the dielectric layer 110 overlaps the opening O2 of the pixel defining layer 140.

In the embodiment, the second electrode 126 and the organic light emitting layer 124 of the organic light emitting diode 120 are disposed in the opening O1, but the invention is not limited thereto. In other embodiments, the second electrode 126 and the organic light emitting layer 124 extend from the opening O1 into the opening O2 and into the opening TO.

Based on the above, the transmittance of the first transparent area TA1 can be improved by the arrangement of the openings TO.

Fig. 6 is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention. It should be noted that the embodiment of fig. 6 uses the element numbers and part of the contents of the embodiments of fig. 1A and 1B, where the same or similar elements are denoted by the same or similar numbers, and the description of the same technical contents is omitted. Reference may be made to the foregoing embodiments for description of omitted parts, which are not repeated here.

Referring to fig. 6, the encapsulation layer 130 includes a first insulation layer 131, a second insulation layer 132, a third insulation layer 133, a fourth insulation layer 134, a fifth insulation layer 135, and a sixth insulation layer 156, which are sequentially stacked. In this embodiment, the top surface of the planar layer PL is not a planar surface (e.g., a surface recessed downward), and sequentially conformally forming the first insulating layer 131, the second insulating layer 132, the third insulating layer 133, the fourth insulating layer 134, the fifth insulating layer 135, and the sixth insulating layer 156 can reduce the degree of recessing of the top surface of the structure, thereby enabling the cover layer CL to be formed on a relatively planar surface.

The dielectric layer 110 includes a passivation layer 112 and an interlayer dielectric layer 114, and the passivation layer 112 and the interlayer dielectric layer 114 have an opening TO located in the first transparent region TA1. In this embodiment, the opening TO penetrates the passivation layer 112 and the interlayer dielectric layer 114. The opening TO of the dielectric layer 110 overlaps the opening O1 of the pixel defining layer 140.

In the present embodiment, the organic light emitting layer 124 of the organic light emitting diode 120 extends from the opening O1 into the opening TO.

Fig. 7 is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention. It should be noted that the embodiment of fig. 7 uses the element numbers and part of the contents of the embodiments of fig. 1A and 1B, where the same or similar elements are denoted by the same or similar numbers, and the description of the same technical contents is omitted. Reference may be made to the foregoing embodiments for description of omitted parts, which are not repeated here.

Referring to fig. 7, the microstructure M of the cover layer CL includes a polygon. For example, the microstructure M comprises a rectangle. By adjusting the density (number/unit area) of the microstructures M, the amount of light L that passes through the cover layer CL can be controlled.

Fig. 8 is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention. It should be noted that the embodiment of fig. 8 uses the element numbers and part of the contents of the embodiments of fig. 1A and 1B, where the same or similar elements are denoted by the same or similar numbers, and the description of the same technical contents is omitted. Reference may be made to the foregoing embodiments for description of omitted parts, which are not repeated here.

Referring to fig. 8, the microstructure M of the cover layer CL includes a polygon. For example, the microstructure M comprises a triangle. By adjusting the density (number/unit area) of the microstructures M, the amount of light L that passes through the cover layer CL can be controlled.

Fig. 9 is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention. It should be noted that the embodiment of fig. 9 uses the element numbers and part of the content of the embodiment of fig. 6, where the same or similar numbers are used to denote the same or similar elements, and the description of the same technical content is omitted. Reference may be made to the foregoing embodiments for description of omitted parts, which are not repeated here.

Referring to fig. 9, in the present embodiment, the method of forming the organic light emitting layer 124 includes an inkjet printing process. For example, the organic light emitting layer 124 is formed by forming ink droplets in the openings O1 of the pixel defining layer 140 and in the openings TO of the dielectric layer 110, and then drying the ink droplets. In some embodiments, the steps of dropping the ink droplets and drying the ink droplets are repeated several times, thereby increasing the thickness of the organic light emitting layer 124. For example, the ink droplets are dried after dropping the ink droplets to form a first layer dry film, and then the ink droplets are dried after dropping the ink droplets on the first layer dry film to form a second layer dry film, and the multi-layer dry film is formed in a similar manner to constitute the organic light emitting layer 124 having a predetermined thickness.

In this embodiment, the opening O1 of the pixel defining layer 140 overlaps the first transparent area TA1 and the first non-transparent area NTA1. The pixel defining layer 140 is not disposed between the first transparent areas TA1 and the first non-transparent areas NTA1. Based on the above, the accommodating space of the opening O1 can be increased, thereby increasing the number of spray droplets of ink droplets, so that the process margin of the organic light emitting layer 124 is improved. In addition, the probability of Mura caused by the drying process can be reduced due to the increased amount of ink droplets.

In this embodiment, ink droplets are formed in the opening TO in addition TO the opening O1. The opening TO of the dielectric layer 110 may further increase the number of spray droplets of ink. In this embodiment, the width of the bottom of the opening TO is smaller than the width of the top of the opening TO. The width of the opening TO in the passivation layer 112 decreases as it gets closer TO the substrate SB, and the width of the opening TO in the interlayer dielectric layer 114 decreases as it gets closer TO the substrate SB.

In the present embodiment, the organic light emitting layer 124 is stacked at the corners of the opening TO, and thus, the thickness of the organic light emitting layer 124 increases as approaching the sidewalls of the opening TO on the bottom surface of the opening TO.

In the embodiment, the second electrode 126 of the organic light emitting diode 120 extends from the first non-transparent region NTA1 TO the first transparent region TA1 and fills the opening TO, but the invention is not limited thereto. In other embodiments, the second electrode 126 does not fill the opening TO.

Fig. 10 is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention. It should be noted that the embodiment of fig. 10 uses the element numbers and part of the content of the embodiment of fig. 9, where the same or similar elements are denoted by the same or similar numbers, and the description of the same technical content is omitted. Reference may be made to the foregoing embodiments for description of omitted parts, which are not repeated here.

Referring TO fig. 10, in the present embodiment, a sidewall of the bottom of the opening TO of the dielectric layer 110 has a recess C, and the organic light emitting layer 124 is filled into the recess C. In this embodiment, the recess C is located in the interlayer dielectric layer 114. In some embodiments, the opening TO and the recess C are formed by over-etching or multiple etching. The grooves C may be used to accommodate ink droplets, thereby increasing the number of droplets sprayed, and improving the process margin of the organic light emitting layer 124. In some embodiments, groove C surrounds the bottom of opening TO.

FIG. 11 is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention. It should be noted that the embodiment of fig. 11 uses the element numbers and part of the content of the embodiment of fig. 9, where the same or similar numbers are used to denote the same or similar elements, and the description of the same technical content is omitted. Reference may be made to the foregoing embodiments for description of omitted parts, which are not repeated here.

Referring TO fig. 11, in the present embodiment, the width of the bottom of the opening TO is larger than the width of the top of the opening TO. The width of the opening TO in the passivation layer 112 increases as it is closer TO the substrate SB, and the width of the opening TO in the interlayer dielectric layer 114 increases as it is closer TO the substrate SB. Compared with the embodiment of fig. 9, the organic light emitting layer 124 of the present embodiment is less likely TO be stacked at the corners of the openings TO, thereby improving the negative effect of the stacked organic light emitting layer 124 on the transmittance.

In the present embodiment, the conductive material 126a is simultaneously deposited in the opening TO when the second electrode 126 of the organic light emitting diode 120 is formed. Since the width of the bottom of the opening TO is greater than the width of the top of the opening TO, the conductive material 126a formed in the above-described process is not easily deposited on the sidewalls of the opening TO, so that the conductive material 126a and the second electrode 126 in the opening TO are separated from each other. In other embodiments, the second electrode 126 is formed without depositing the conductive material 126a in the opening TO.

Fig. 12 is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention. It should be noted that the embodiment of fig. 12 uses the element numbers and part of the content of the embodiment of fig. 11, where the same or similar numbers are used to denote the same or similar elements, and the description of the same technical content is omitted. Reference may be made to the foregoing embodiments for description of omitted parts, which are not repeated here.

Referring TO fig. 12, in the present embodiment, a sidewall of the bottom of the opening TO of the dielectric layer 110 has a recess C, and the organic light emitting layer 124 is filled into the recess C. In this embodiment, the recess C is located in the interlayer dielectric layer 114. In some embodiments, the opening TO and the recess C are formed by over-etching or multiple etching. The grooves C may be used to accommodate ink droplets, thereby increasing the number of droplets sprayed, and improving the process margin of the organic light emitting layer 124. In some embodiments, groove C surrounds the bottom of opening TO.

Fig. 13A is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention. Fig. 13B is a schematic top view of the first subpixel of fig. 13A. It should be noted that the embodiment of fig. 13A uses the element numbers and part of the content of the embodiment of fig. 10, where the same or similar elements are denoted by the same or similar numbers, and the description of the same technical content is omitted. Reference may be made to the foregoing embodiments for description of omitted parts, which are not repeated here.

Referring to fig. 13A and 13B, the dielectric layer 110 includes a passivation layer 112 and an interlayer dielectric layer 114. The passivation layer 112 and the interlayer dielectric layer 114 have an opening TO in the first transparent region TA1. The passivation layer 112 has a flow-guiding hole DH connected TO the opening TO on its sidewall. In this embodiment, the deflector hole DH extends from the first transparent region TA1 to the first non-transparent region NTA1 and overlaps the first non-transparent region NTA1. The deflector holes DH are provided in the passivation layer 112, for example.

In this embodiment, at least a portion of the organic light emitting layer 124 is located in the opening TO and the diversion hole DH. The deflector holes DH may be used to accommodate ink droplets, thereby increasing the number of spray droplets of ink droplets, and improving the process margin of the organic light emitting layer 124.

In some embodiments, the flow-directing holes DH of each sub-pixel are not connected to the flow-directing holes DH of adjacent other sub-pixels.

The plurality of support structures ST are disposed in the guide holes DH, and the first electrodes 122 of the organic light emitting diodes 120 are electrically connected to the switching elements T through the through holes TH penetrating the support structures ST.

In the present embodiment, the width of the opening TO in the passivation layer 112 decreases with the closer TO the substrate SB, but the invention is not limited thereto. In other embodiments, the width of the opening TO in the passivation layer 112 increases as it gets closer TO the substrate SB.

Fig. 14 is a schematic cross-sectional view of a first sub-pixel according to an embodiment of the invention. It should be noted that the embodiment of fig. 14 uses the element numbers and part of the content of the embodiment of fig. 13A, where the same or similar elements are denoted by the same or similar numbers, and the description of the same technical content is omitted. Reference may be made to the foregoing embodiments for description of omitted parts, which are not repeated here.

Referring TO fig. 14, the width of the opening TO in the passivation layer 112 increases as it gets closer TO the substrate SB. The deflector holes DH are provided in the passivation layer 112, for example. The deflector hole DH has a slope at a portion near the opening TO. For example, the flow guiding hole DH has an inclination angle θ at a bottom surface of a portion near the opening TO, and the inclination angle θ is about 5 degrees TO 60 degrees. In some embodiments, the slope corresponding to the inclination angle θ may be defined as the length of the first non-transparent area NTA1 divided by the difference between the deepest portion of the guiding hole DH and the shallowest portion of the guiding hole DH.

By setting the inclination angle θ, ink droplets can more easily flow into the deflector hole DH when the organic light emitting layer 124 is formed.

In the present embodiment, the width of the opening TO in the passivation layer 112 increases with the closer TO the substrate SB, but the invention is not limited thereto. In other embodiments, the width of the opening TO in the passivation layer 112 decreases as it gets closer TO the substrate SB.

Referring to fig. 15, in the present embodiment, the pixel PX may include a first sub-pixel 10, a second sub-pixel 20, and a third sub-pixel 30 with different transparent areas. For example, the first sub-pixel 10, the second sub-pixel 20 and the third sub-pixel 30 are respectively a red sub-pixel, a green sub-pixel and a blue sub-pixel, wherein the area of the first transparent area TA1 of the red sub-pixel is larger than the area of the second transparent area TA2 of the green sub-pixel, and the area of the second transparent area TA2 of the green sub-pixel is larger than the area of the third transparent area TA3 of the blue sub-pixel, wherein the area of the first non-transparent area NTA1 of the red sub-pixel is smaller than the area of the second non-transparent area NTA2 of the green sub-pixel, and the area of the second non-transparent area NTA2 of the green sub-pixel is smaller than the area of the third non-transparent area NTA3 of the blue sub-pixel.

In the present embodiment, the first, second and third sub-pixels 10, 20 and 30 have similar structures, and the difference is only the size of the transparent region and the non-transparent region. The structure of the first, second and third sub-pixels 10, 20 and 30 may be similar to that of the sub-pixels in any of the previous embodiments.

Of course, the present invention is capable of other various embodiments and its several details are capable of modification and variation in light of the present invention, as will be apparent to those skilled in the art, without departing from the spirit and scope of the invention as defined in the appended claims.

Claims

1. A light emitting device, comprising:

a substrate; and

a first sub-pixel having a first transparent region and a first non-transparent region, and comprising:

a switch element located on the substrate and in the first non-transparent region;

a dielectric layer on the switch element;

an organic light emitting diode on the dielectric layer and electrically connected to the switching element; and

the packaging layer is positioned on the organic light-emitting diode and in the first transparent region and the first non-transparent region, wherein the packaging layer comprises a first insulating layer, a second insulating layer and a third insulating layer which are sequentially stacked, the first insulating layer is closer to the organic light-emitting diode than the third insulating layer, the refractive index of the third insulating layer is smaller than that of the second insulating layer, and the refractive index of the second insulating layer is smaller than that of the first insulating layer;

the dielectric layer comprises a passivation layer and an interlayer dielectric layer, the passivation layer and the interlayer dielectric layer are provided with an opening positioned in the first transparent region, wherein the side wall of the passivation layer is provided with a diversion hole connected with the opening, and the diversion hole is overlapped with the first non-transparent region; wherein the organic light emitting diode includes:

a first electrode electrically connected to the switching element;

an organic light-emitting layer located on the first electrode, and at least part of the organic light-emitting layer is located in the opening and the diversion hole; and

and a second electrode on the organic light-emitting layer.

2. The light-emitting device according to claim 1, further comprising:

and the cover layer is positioned on the packaging layer, in the first transparent region and in the first non-transparent region, wherein the surface of the cover layer is provided with a plurality of microstructures, and the microstructures are positioned in at least one of the first transparent region and the first non-transparent region.

3. The light-emitting device of claim 2, wherein the density of the microstructures in the first transparent region is less than the density of the microstructures in the first non-transparent region.

4. The light-emitting device of claim 2, wherein the density of the microstructures in the first transparent region is greater than the density of the microstructures in the first non-transparent region.

5. The light-emitting device according to claim 1, further comprising:

the plurality of support structures are arranged in the diversion holes, and the first electrode is electrically connected to the switch element through a through hole penetrating through the support structures.

6. The light emitting device of claim 1, wherein a width of a bottom of the opening is greater than a width of a top of the opening.

7. The light emitting device of claim 1, wherein a width of a bottom of the opening is less than a width of a top of the opening.

8. The light-emitting device according to claim 1, wherein a sidewall of a bottom of the opening has a groove.

9. The light-emitting device of claim 1, further comprising a second sub-pixel having a second transparent region and a second non-transparent region, wherein the area of the first transparent region is larger than the area of the second transparent region.