CN112458540A - Solar single crystal texturing process - Google Patents
Solar single crystal texturing process Download PDFInfo
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- CN112458540A CN112458540A CN202011164592.2A CN202011164592A CN112458540A CN 112458540 A CN112458540 A CN 112458540A CN 202011164592 A CN202011164592 A CN 202011164592A CN 112458540 A CN112458540 A CN 112458540A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The invention relates to the field of solar cell production. The technical scheme adopted by the invention is as follows: a solar energy single crystal texturing process is characterized in that cut silicon wafers are directly textured after being cleaned without adopting a rough polishing process, and then are cleaned before installation, rinsed with pure water, textured, rinsed with pure water, cleaned after installation, rinsed with pure water, acid-washed in a mixed mode, rinsed with pure water, pulled slowly and dried. The invention has the beneficial effects that: the use of a rough polishing groove is avoided, the cost caused by sodium hydroxide in the rough polishing groove can be saved, a small suede can be formed, the size of the suede after texturing can be directly determined due to the fact that a large tower footing is arranged on the suede after rough polishing, the suede can be reduced by 1-2 microns without rough polishing, the small suede has lower reflectivity and can absorb more light, short-circuit current can be obviously improved, and finally the conversion efficiency of the battery piece is improved. The suede obtained by two-step texturing is finer and has lower reflectivity.
Description
Technical Field
The invention relates to the field of solar cell production.
Background
The monocrystalline texturing is used as a first procedure, and surface texturing, namely a texturing process, needs to be carried out on the crystalline silicon battery. The effective texture surface structure enables incident light to be reflected and refracted on the surface of the silicon wafer for multiple times, so that light absorption is increased, reflectivity is reduced, and the performance of the cell is improved. At present, the majority of the texturing processes adopted in the industry are as follows: rough polishing → front washing → water washing → wool making → water washing → rear washing → water washing → acid washing → water washing → slow pulling → drying. The rough polishing groove is used for polishing the surface of the silicon wafer, a large suede surface can be formed on the surface of the polished silicon wafer, after texturing is carried out, the whole suede surface is large, the reflectivity is high, and therefore absorbed light is reduced, and electrical performance parameters are lost. At present, through continuous innovation of additives (main components: surfactant, defoaming agent, sodium silicate and the like) in the texturing solution, the process is changed into the following steps: front washing → water washing → wool making → water washing → rear washing → water washing → mixed acid washing → water washing → slow pulling → drying. Therefore, the non-silicon cost caused by sodium hydroxide in the rough polishing groove can be saved, a small suede can be formed, the size of the suede after texturing can be directly determined due to the fact that a large tower footing is arranged on the suede after rough polishing, rough polishing is not used, the suede can be reduced by 1-2 microns, the small suede has lower reflectivity and can absorb more light, short-circuit current can be obviously improved, and the conversion efficiency of a battery piece is finally improved.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to further improve the conversion efficiency of the battery plate.
The technical scheme adopted by the invention is as follows: a solar energy single crystal texture etching process, a cut silicon wafer is cleaned without adopting a rough polishing process and then is directly textured, and the specific steps are carried out as follows
Step one, pre-cleaning: cleaning the silicon wafer by using hydrogen peroxide and sodium hydroxide, wherein the concentration of the hydrogen peroxide is 5-15%, the concentration of the sodium hydroxide is 2-10%, the temperature is 50-75 ℃, and the time is 100-200 s;
step two, rinsing with pure water: time 100-;
step three, texturing: using sodium hydroxide and an additive to perform wool making, wherein the concentration of the sodium hydroxide is 1-5%, the concentration of the additive is 1-3%, and the balance is water, the temperature is 78-85 ℃, and the time is 300-;
step four, rinsing with pure water: time 100-;
step five, post-cleaning: cleaning the silicon wafer again by using hydrogen peroxide and sodium hydroxide, wherein the concentration of the hydrogen peroxide is 5-15%, the concentration of the sodium hydroxide is 2-10%, and the temperature is 50-70 ℃ for 100 seconds and 200 seconds;
step six, rinsing with pure water: time 100-;
step seven, mixed pickling: cleaning metal ions and the like in the silicon wafer by using hydrochloric acid and hydrofluoric acid, wherein the concentration of the hydrofluoric acid is 5-15%, the concentration of the hydrochloric acid is 5-15%, and the time is 100-;
step eight, rinsing with pure water: time 100-;
step nine, slow lifting: the slow pulling mainly has the functions of preheating and dehydrating the silicon wafer, and pure water is adopted at the temperature of 50-70 ℃ for 100-200 s;
step ten, drying: blowing hot nitrogen at 80-95 ℃ for 400-800 s.
The adopted NaOH is EL-grade NaOH, the hydrogen peroxide is EL-grade hydrogen peroxide, the hydrochloric acid is EL-grade hydrochloric acid, the hydrofluoric acid is UP-grade hydrofluoric acid, and the pure water adopts pure water with the resistivity of more than 18 megaohms. The volume of the tank body is 150L, and the preparation solution uses 40% of sodium hydroxide, 30% of hydrogen peroxide, 37% of hydrochloric acid and 49% of hydrofluoric acid.
In the third step, the additive comprises 2 percent of potassium gluconate, 5 percent of sodium bicarbonate, 4 percent of sodium citrate, 2 percent of propylene glycol, 1 percent of sodium gluconate, 3 percent of sodium silicate and the balance of water by mass percentage.
In the third step, the wool making is divided into two steps, firstly the wool making is carried out for 100-200s, and the pure water rinsing is carried out: and the wool making is carried out again for 200-300s after the time of 100-200 s.
The invention has the beneficial effects that: the use of a rough polishing groove is avoided, the cost caused by sodium hydroxide in the rough polishing groove can be saved, a small suede can be formed, the size of the suede after texturing can be directly determined due to the fact that a large tower footing is arranged on the suede after rough polishing, the suede can be reduced by 1-2 microns without rough polishing, the small suede has lower reflectivity and can absorb more light, short-circuit current can be obviously improved, and finally the conversion efficiency of the battery piece is improved. The suede obtained by two-step texturing is finer and has lower reflectivity.
Detailed Description
Example 1
1. Pre-cleaning: cleaning the silicon wafer by using hydrogen peroxide and sodium hydroxide, wherein the concentration of hydrogen peroxide is 7 percent, the concentration of sodium hydroxide is 3.5 percent, the temperature is 55 ℃, and the time is 130 s;
2. rinsing with pure water: the time is 120 s;
3. texturing: using sodium hydroxide and an additive to carry out wool making, wherein the concentration of the sodium hydroxide is 2.0 percent, the concentration of the additive is 1.2 percent, the temperature is 80 ℃, and the time is 430 s; (in the additive, 2 percent by mass of potassium gluconate, 5 percent by mass of sodium bicarbonate, 4 percent by mass of sodium citrate, 2 percent by mass of propylene glycol, 1 percent by mass of sodium gluconate, 3 percent by mass of sodium silicate and the balance of water)
4. Rinsing with pure water: the time is 150 s;
5. post-cleaning: cleaning the silicon wafer again by using hydrogen peroxide and sodium hydroxide, wherein the concentration of hydrogen peroxide is 7 percent, the concentration of sodium hydroxide is 3.5 percent, the temperature is 65 ℃, and the time is 130 s;
6. rinsing with pure water: the time is 120 s;
7. mixed pickling: cleaning metal ions and the like in the silicon wafer by using hydrochloric acid and hydrofluoric acid, wherein the concentration of the hydrofluoric acid is 10 percent, the concentration of the hydrochloric acid is 15 percent, and the time is 180 seconds;
8. rinsing with pure water: the time is 180 s;
9. slowly pulling: the slow pulling mainly has the functions of preheating and dehydrating the silicon wafer, and pure water is adopted, the temperature is 60 ℃, and the time is 100 s; (slow lifting is also a pure water cleaning, and only slowly lifts the silicon wafer to play a role in dehydration.)
10. Drying: blowing hot nitrogen at 90 deg.c for 600 s.
Example 2
1. Pre-cleaning: cleaning the silicon wafer by using hydrogen peroxide and sodium hydroxide, wherein the concentration of hydrogen peroxide is 7 percent, the concentration of sodium hydroxide is 3.5 percent, the temperature is 55 ℃, and the time is 130 s;
2. rinsing with pure water: the time is 120 s;
3. texturing: using sodium hydroxide and an additive to carry out wool making, wherein the concentration of the sodium hydroxide is 2.0 percent, the concentration of the additive is 1.2 percent, the temperature is 80 ℃, and the time is 130 s; (in the additive, 2 percent by mass of potassium gluconate, 5 percent by mass of sodium bicarbonate, 4 percent by mass of sodium citrate, 2 percent by mass of propylene glycol, 1 percent by mass of sodium gluconate, 3 percent by mass of sodium silicate and the balance of water)
4. Rinsing with pure water: the time is 120 s;
3. texturing: using sodium hydroxide and an additive to carry out wool making, wherein the concentration of the sodium hydroxide is 2.0 percent, the concentration of the additive is 1.2 percent, the temperature is 80 ℃, and the time is 300 s; (in the additive, 2 percent by mass of potassium gluconate, 5 percent by mass of sodium bicarbonate, 4 percent by mass of sodium citrate, 2 percent by mass of propylene glycol, 1 percent by mass of sodium gluconate, 3 percent by mass of sodium silicate and the balance of water)
4. Rinsing with pure water: the time is 150 s;
5. post-cleaning: cleaning the silicon wafer again by using hydrogen peroxide and sodium hydroxide, wherein the concentration of hydrogen peroxide is 7 percent, the concentration of sodium hydroxide is 3.5 percent, the temperature is 65 ℃, and the time is 130 s;
6. rinsing with pure water: the time is 120 s;
7. mixed pickling: cleaning metal ions and the like in the silicon wafer by using hydrochloric acid and hydrofluoric acid, wherein the concentration of the hydrofluoric acid is 10 percent, the concentration of the hydrochloric acid is 15 percent, and the time is 180 seconds;
8. rinsing with pure water: the time is 180 s;
9. slowly pulling: the slow pulling mainly has the functions of preheating and dehydrating the silicon wafer, and pure water is adopted, the temperature is 60 ℃, and the time is 100 s; (slow lifting is also a pure water cleaning, and only slowly lifts the silicon wafer to play a role in dehydration.)
10. Drying: blowing hot nitrogen at 90 deg.c for 600 s.
With respect to example 1, the conversion efficiency Eta (%) of the battery sheet of example 2 was improved by 0.13%, the open circuit voltage uoc (v) was improved by 0.001, the short circuit current isc (a) was improved by 0.036, the fill factor FF (%) was improved by 0.09, the series resistance Rs (Ω) was reduced by 0.004, the parallel resistance Rsh (Ω) was improved by 62, and the reflectance (%) was reduced by 1.23.
Claims (3)
1. A solar energy single crystal texturing process is characterized in that: cleaning the cut silicon wafer without adopting a rough polishing process, and then directly texturing, wherein the method comprises the following steps
Step one, pre-cleaning: cleaning the silicon wafer by using hydrogen peroxide and sodium hydroxide, wherein the concentration of the hydrogen peroxide is 5-15%, the concentration of the sodium hydroxide is 2-10%, the temperature is 50-75 ℃, and the time is 100-200 s;
step two, rinsing with pure water: time 100-;
step three, texturing: using sodium hydroxide and an additive to perform wool making, wherein the concentration of the sodium hydroxide is 1-5%, the concentration of the additive is 1-3%, and the balance is water, the temperature is 78-85 ℃, and the time is 300-;
step four, rinsing with pure water: time 100-;
step five, post-cleaning: cleaning the silicon wafer again by using hydrogen peroxide and sodium hydroxide, wherein the concentration of the hydrogen peroxide is 5-15%, the concentration of the sodium hydroxide is 2-10%, and the temperature is 50-70 ℃ for 100 seconds and 200 seconds;
step six, rinsing with pure water: time 100-;
step seven, mixed pickling: cleaning metal ions and the like in the silicon wafer by using hydrochloric acid and hydrofluoric acid, wherein the concentration of the hydrofluoric acid is 5-15%, the concentration of the hydrochloric acid is 5-15%, and the time is 100-;
step eight, rinsing with pure water: time 100-;
step nine, slow lifting: the slow pulling mainly has the functions of preheating and dehydrating the silicon wafer, and pure water is adopted at the temperature of 50-70 ℃ for 100-200 s;
step ten, drying: blowing hot nitrogen at 80-95 ℃ for 400-800 s.
2. The solar single crystal texturing process of claim 1, wherein: in the third step, the additive comprises 2 percent of potassium gluconate, 5 percent of sodium bicarbonate, 4 percent of sodium citrate, 2 percent of propylene glycol, 1 percent of sodium gluconate, 3 percent of sodium silicate and the balance of water by mass percentage.
3. The solar single crystal texturing process of claim 1, wherein: in the third step, the wool making is divided into two steps, firstly the wool making is carried out for 100-200s, and the pure water rinsing is carried out: and the wool making is carried out again for 200-300s after the time of 100-200 s.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113130300A (en) * | 2021-04-15 | 2021-07-16 | 通威太阳能（安徽）有限公司 | Process for single crystal PERC texturing |
| CN113284978A (en) * | 2021-04-20 | 2021-08-20 | 山西潞安太阳能科技有限责任公司 | Wet-process texturing process suitable for P-type and N-type solar cells |
| CN113421946A (en) * | 2021-06-21 | 2021-09-21 | 苏州潞能能源科技有限公司 | Rework process of solar cell |
| CN116314473A (en) * | 2023-05-12 | 2023-06-23 | 一道新能源科技(衢州)有限公司 | P-type IBC solar cell and texturing method thereof |
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| CN113421946A (en) * | 2021-06-21 | 2021-09-21 | 苏州潞能能源科技有限公司 | Rework process of solar cell |
| CN116314473A (en) * | 2023-05-12 | 2023-06-23 | 一道新能源科技(衢州)有限公司 | P-type IBC solar cell and texturing method thereof |
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