CN112435997A - 一种碳化硅功率模块结构 - Google Patents
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Abstract
本发明公开了一种碳化硅功率模块结构,包括底板以及与所述底板装配连接的外壳;其中,所述底板上设置有覆铜基板,若干颗芯片并联对称分布,并通过焊料焊接在所述覆铜基板的覆铜层上,主电极端子和驱动电极端子通过超声波焊接的方式与所述覆铜层焊接连接。本申请采用多芯片并联对称分布方式,均流性较好。同时采用紧凑的叠层母排方式,使整个模块内部的杂散电感降低至约4nH。同时芯片的驱动辅助电极从芯片表面单独引出,这样避免了功率回路与驱动回路的耦合,可以降低产品的开关损耗。
Description
技术领域
本发明涉及半导体器件技术领域,尤其是涉及一种碳化硅功率模块结构。
背景技术
碳化硅(SiC)作为一种新兴功率半导体材料的代表,具有高频、耐高温和高压等特点,可以有效的实现电力电子***的高效率、小型化和轻量化,有助于设备节能及节省设备占地空间,已成为电力电子装置研究的重要选择。
但是,目前功率模块的设计杂散电感通常都在10nH以上,由于SiC器件本身开关速度快,因而对模块本身内部杂散电感比较敏感。较高的杂散电感将影响模块的开关速率以及引起不必要的振荡。对产品可靠性产生不利影响。驱动的辅助电极从功率回路直接引出,会造成驱动回路和功率回路的耦合问题,造成开关损耗增大,引起不必要的振荡;同时并联芯片数量较少。另外,现有模块驱动的辅助电极从功率回路直接引出。
公开于该背景技术部分的信息仅仅旨在加深对本发明的总体背景技术的理解,而不应当被视为承认或以任何形式暗示该信息构成已为本领域技术人员所公知的现有技术。
发明内容
本发明的目的在于提供一种碳化硅功率模块结构,以解决现有技术中存在的问题。
为了实现上述目的,本发明采用以下技术方案:
本发明提供一种碳化硅功率模块结构,包括底板以及与所述底板装配连接的外壳;其中,
所述底板上设置有覆铜基板,若干颗芯片并联对称分布,并通过焊料焊接在所述覆铜基板的覆铜层上,主电极端子和驱动电极端子均通过超声波焊接的方式与所述覆铜层焊接连接;
所有芯片的驱动端栅极均与驱动端栅极电极电连接,所有芯片的驱动端源极均与驱动端源极电极电连接,所有芯片的驱动辅助电极均从芯片的表面单独引出;
所述驱动端栅极电极与所述驱动端源极电极均设置在所述覆铜基板上,二者的电极端子均由所述外壳上对应位置的开孔引出;
碳化硅功率模块结构的源极和漏极的电极端子均由所述外壳上对应位置的开孔引出,并弯折。
作为一种进一步的技术方案,所述覆铜基板的覆铜层上共并联10颗芯片。
作为一种进一步的技术方案,所述覆铜基板通过焊料与所述底板焊接连接。
作为一种进一步的技术方案,所述芯片为SiC MOSFET芯片或IGBT芯片。
作为一种进一步的技术方案,所述底板为铝碳化硅底板。
作为一种进一步的技术方案,所述覆铜基板为氮化铝基板。
采用上述技术方案,本发明具有如下有益效果:
本申请采用多芯片并联对称分布方式,均流性较好。同时采用紧凑的叠层母排方式,使整个模块内部的杂散电感降低至约4nH。同时芯片的驱动辅助电极从芯片表面单独引出,这样避免了功率回路与驱动回路的耦合,可以降低产品的开关损耗。
附图说明
为了更清楚地说明本发明具体实施方式或现有技术中的技术方案,下面将对具体实施方式或现有技术描述中所需要使用的附图作简单的介绍,显而易见地,下面描述中的附图是本发明的一些实施方式,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1本发明的碳化硅功率模块结构的装配立体图;
图2本发明的底板上装配后的立体图;
图3本发明的碳化硅功率模块结构的等效电路图;
图4本发明的碳化硅功率模块结构的杂散电感仿真结果示意图;
图5本发明的碳化硅功率模块结构内部电流流向示意图;
图6现有技术中驱动辅助电极从主回路当中引出的等效电路图;
图7本发明中驱动辅助电极从芯片的表面单独引出的等效电路图。
具体实施方式
下面将结合附图对本发明的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
在本发明的描述中,需要说明的是,术语“中心”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。此外,术语“第一”、“第二”、“第三”仅用于描述目的,而不能理解为指示或暗示相对重要性。
在本发明的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本发明中的具体含义。
以下结合附图对本发明的具体实施方式进行详细说明。应当理解的是,此处所描述的具体实施方式仅用于说明和解释本发明,并不用于限制本发明。
结合图1-3所示,本实施例提供一种碳化硅功率模块结构,包括底板1以及与所述底板1装配连接的外壳2;其中,
所述底板1上设置有覆铜基板3,若干颗芯片4并联对称分布,并通过焊料焊接在所述覆铜基板的覆铜层上,主电极端子和驱动电极端子均通过超声波焊接的方式与所述覆铜层焊接连接;
所有芯片4的驱动端栅极均与驱动端栅极电极5电连接,所有芯片4的驱动端源极均与驱动端源极电极6电连接,所有芯片4的驱动辅助电极均从芯片的表面单独引出;
所述驱动端栅极电极5与所述驱动端源极电极6均设置在所述覆铜基板3上,二者的电极端子均由所述外壳上对应位置的开孔引出;
碳化硅功率模块结构的源极电极端子7和漏极电极端子8的均由所述外壳上对应位置的开孔引出,并弯折。
在该实施例中,作为一种进一步的技术方案,所述覆铜基板的覆铜层上共并联10颗芯片。
在该实施例中,作为一种进一步的技术方案,所述覆铜基板通过焊料与所述底板焊接连接。
在该实施例中,作为一种进一步的技术方案,所述芯片为SiC MOSFET芯片或IGBT芯片。
在该实施例中,作为一种进一步的技术方案,所述底板为铝碳化硅底板。
在该实施例中,作为一种进一步的技术方案,所述覆铜基板为氮化铝基板。
结合图4所示,本方案的模块杂散电感约4nH。
结合图5所示,10颗芯片均匀对称分布,途中虚线表示从漏极端电流流出方向,实线表示电流流入源极端的方向。可以看出电流流出与流入的方向正好平行且相反,同时距离近,彼此产生的电场最大程度的抵消,进而使模块内部的杂散电感很低,通过图4中的仿真结果可知,本方案的模块杂散电感约4nH,远低于目前功率模块的设计杂散电感(通常都在10nH以上)。
结合图6所示,在传统的功率模块设计当中,驱动端的辅助电极端,都是从主回路当中引出,并通过引线键合连接到外壳的端子上。这样的引出方式,会造成驱动回路和功率回路存在公共电感的耦合L1(图6中L1为两个回路公共的寄生电感),进而造成驱动回路的振荡与损耗的增加。
结合图7所示,因本申请采用了芯片的驱动辅助电极从芯片表面单独引出的结构形式,就避免了功率与驱动回路的耦合,从而降低模块的开关损耗。
本申请的主要工艺如下:
芯片和基板焊接→引线键合→电极端子超声波焊接→外壳装配→硅凝胶灌封→电极折弯。
综上,本申请的技术方案具有如下优点:
1、本方案中的芯片可以是SiC MOSFET芯片,也可以是IGBT芯片;
2、本方案的模块杂散电感更低,约4nH;
3、本方案中芯片并联对称分布,并联数量多达10颗,形成了大电流大功率;
4、本方案中芯片的驱动辅助电极从芯片表面单独引出,这样避免了功率回路与驱动回路的耦合,可以降低模块的开关损耗;
5、本产品的电极端子采用超声波焊接方式进行,不是传统的焊料焊接方式,可靠性更高;
6、本方案底板采用铝碳化硅底板,陶瓷基板采用氮化铝基板,两者的热膨胀系数接近,焊接面热应力会,可靠性更高。
最后应说明的是:以上各实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述各实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。
Claims (6)
1.一种碳化硅功率模块结构,其特征在于,包括底板以及与所述底板装配连接的外壳;其中,
所述底板上设置有覆铜基板,若干颗芯片并联对称分布,并通过焊料焊接在所述覆铜基板的覆铜层上,主电极端子和驱动电极端子均通过超声波焊接的方式与所述覆铜层焊接连接;
所有芯片的驱动端栅极均与驱动端栅极电极电连接,所有芯片的驱动端源极均与驱动端源极电极电连接,所有芯片的驱动辅助电极均从芯片的表面单独引出;
所述驱动端栅极电极与所述驱动端源极电极均设置在所述覆铜基板上,二者的电极端子均由所述外壳上对应位置的开孔引出;
碳化硅功率模块结构的源极和漏极的电极端子均由所述外壳上对应位置的开孔引出,并弯折。
2.根据权利要求1所述的碳化硅功率模块结构,其特征在于,所述覆铜基板的覆铜层上共并联10颗芯片。
3.根据权利要求1所述的碳化硅功率模块结构,其特征在于,所述覆铜基板通过焊料与所述底板焊接连接。
4.根据权利要求1所述的碳化硅功率模块结构,其特征在于,所述芯片为SiC MOSFET芯片或IGBT芯片。
5.根据权利要求1所述的碳化硅功率模块结构,其特征在于,所述底板为铝碳化硅底板。
6.根据权利要求1所述的碳化硅功率模块结构,其特征在于,所述覆铜基板为氮化铝基板。
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CN113097159A (zh) * | 2021-03-22 | 2021-07-09 | 西安交通大学 | 一种碳化硅mosfet芯片双向开关功率模块及其制备方法 |
CN114141744A (zh) * | 2021-10-15 | 2022-03-04 | 西安交通大学 | 一种SiC MOSFET子模组单元压接型封装 |
WO2024067272A1 (zh) * | 2022-09-29 | 2024-04-04 | 扬州国扬电子有限公司 | 一种低电感功率模块 |
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CN113097159A (zh) * | 2021-03-22 | 2021-07-09 | 西安交通大学 | 一种碳化硅mosfet芯片双向开关功率模块及其制备方法 |
CN113097159B (zh) * | 2021-03-22 | 2024-05-24 | 西安交通大学 | 一种碳化硅mosfet芯片双向开关功率模块及其制备方法 |
CN114141744A (zh) * | 2021-10-15 | 2022-03-04 | 西安交通大学 | 一种SiC MOSFET子模组单元压接型封装 |
CN114141744B (zh) * | 2021-10-15 | 2024-05-24 | 西安交通大学 | 一种SiC MOSFET子模组单元压接型封装 |
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