CN112435773B - Low-temperature conductive nano slurry for heterojunction solar cell and preparation method thereof - Google Patents
Low-temperature conductive nano slurry for heterojunction solar cell and preparation method thereof Download PDFInfo
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- CN112435773B CN112435773B CN202011097543.1A CN202011097543A CN112435773B CN 112435773 B CN112435773 B CN 112435773B CN 202011097543 A CN202011097543 A CN 202011097543A CN 112435773 B CN112435773 B CN 112435773B
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- 239000002002 slurry Substances 0.000 title claims abstract description 78
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 229920005989 resin Polymers 0.000 claims abstract description 47
- 239000011347 resin Substances 0.000 claims abstract description 47
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000002270 dispersing agent Substances 0.000 claims abstract description 33
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 29
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000000843 powder Substances 0.000 claims abstract description 29
- 239000002904 solvent Substances 0.000 claims abstract description 22
- 239000013008 thixotropic agent Substances 0.000 claims abstract description 22
- 239000012752 auxiliary agent Substances 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims description 63
- 238000002156 mixing Methods 0.000 claims description 27
- 239000002245 particle Substances 0.000 claims description 20
- 238000003756 stirring Methods 0.000 claims description 18
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical group CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 15
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 7
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229920005749 polyurethane resin Polymers 0.000 claims description 7
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 7
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 7
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 7
- 229940116411 terpineol Drugs 0.000 claims description 7
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 6
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 6
- CRWNQZTZTZWPOF-UHFFFAOYSA-N 2-methyl-4-phenylpyridine Chemical compound C1=NC(C)=CC(C=2C=CC=CC=2)=C1 CRWNQZTZTZWPOF-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910021485 fumed silica Inorganic materials 0.000 claims description 5
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 4
- 239000004952 Polyamide Substances 0.000 claims description 4
- UKLDJPRMSDWDSL-UHFFFAOYSA-L [dibutyl(dodecanoyloxy)stannyl] dodecanoate Chemical compound CCCCCCCCCCCC(=O)O[Sn](CCCC)(CCCC)OC(=O)CCCCCCCCCCC UKLDJPRMSDWDSL-UHFFFAOYSA-L 0.000 claims description 4
- 239000012975 dibutyltin dilaurate Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 229920002647 polyamide Polymers 0.000 claims description 4
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 claims description 3
- 239000002105 nanoparticle Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims 2
- 239000002671 adjuvant Substances 0.000 claims 1
- 239000003822 epoxy resin Substances 0.000 claims 1
- 229920000647 polyepoxide Polymers 0.000 claims 1
- 238000001723 curing Methods 0.000 description 8
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000013035 low temperature curing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0016—Apparatus or processes specially adapted for manufacturing conductors or cables for heat treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a low-temperature conductive nano slurry for a heterojunction with intrinsic thin layer (HIT) solar cell and a preparation method thereof, belonging to the technical field of conductive slurry preparation. The low-temperature conductive nano slurry comprises nano silver powder, nano tin powder, nano graphite powder, resin, a solvent, an auxiliary agent, a thixotropic agent and a dispersing agent; the mass percentages of the components are as follows: nano silver powder: 60 to 70 percent; nano tin powder: 1 to 20 percent; nano graphite powder: 1 to 10 percent; resin: 5 to 15 percent; solvent: 5 to 15 percent; auxiliary agent: 0.3 to 0.5 percent; thixotropic agent: 0.1 to 0.3 percent; dispersing agent: 0.1 to 0.3 percent. According to the invention, the nano silver powder, the nano tin powder and the nano graphite powder are innovatively combined to be used as a conductive functional phase to prepare the low-temperature conductive nano slurry for the HIT solar cell, and the prepared low-temperature nano slurry for the HIT solar cell has good performance and can effectively improve the photoelectric conversion efficiency of the HIT solar cell.
Description
Technical Field
The invention relates to a low-temperature conductive nano slurry for a heterojunction solar cell and a preparation method thereof, belonging to the technical field of conductive nano slurry preparation.
Background
The heterojunction solar cell has the advantages of relatively simple production process and low process temperature, can adapt to the thinning, and has the characteristic of double-sided power generation, so the heterojunction solar cell becomes the mainstream development direction of the solar cell. But the heterojunction solar cell contains an amorphous silicon passivation layer, so that the heterojunction solar cell cannot resist high temperature like a conventional solar cell, and low-temperature silver paste solidified below 200 ℃ must be used. The low-temperature curing silver paste used at present is mainly epoxy-based low-temperature silver paste, the used silver powder is usually micron-sized, the addition amount of the silver powder is usually required to reach 90%, the curing temperature is higher, the cost of the paste is high due to the large consumption of the silver powder, and meanwhile, a certain net hanging phenomenon can exist due to the large particle size of silver powder particles in the printing process.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide the low-temperature conductive nano slurry for the heterojunction solar cell and the preparation method thereof.
The invention has the innovativeness that: the conductive slurry is prepared by adopting the combination of nano silver, nano tin and nano graphite powder particles as a conductive functional phase.
The invention provides a low-temperature conductive nano slurry for a heterojunction solar cell, which comprises nano silver powder, nano tin powder, nano graphite powder, resin, a solvent, an auxiliary agent, a thixotropic agent and a dispersing agent; the mass percentages of the components are as follows:
nano silver powder: 60 to 70 percent;
nano tin powder: 1 to 20 percent;
nano graphite powder: 1 to 10 percent;
resin: 5 to 15 percent;
solvent: 5 to 15 percent;
auxiliary agent: 0.3 to 0.5 percent;
thixotropic agent: 0.1 to 0.3 percent;
dispersing agent: 0.1 to 0.3 percent.
The conductive slurry for the heterojunction solar cell is prepared by combining the nanoparticles serving as a conductive functional phase of the slurry, the resin serving as a binding phase, a solvent, an auxiliary agent, a thixotropic agent and a dispersing agent. The slurry has the advantages of strong conductivity, low sintering temperature, low cost and no net hanging.
In the above scheme, the particle size of the nano silver powder is the maximum particle size D100<300nm, median particle diameter D50<100nm；
The particle diameter of the nano tin powder is the maximum particle diameter D100<300nm, median particle diameterD50<100nm；
The maximum particle diameter D of the nano graphite powder100<300nm, median particle diameter D50<100nm。
Further, the resin is bisphenol A epoxy resin and polyurethane resin prepolymer in a mass ratio of 1: 1-1: 3 in a mixture.
The solvent is terpineol and diethylene glycol monobutyl ether acetate or diethylene glycol dibutyl ether with the mass ratio of 1: 1-1: 5 in a mixture.
The auxiliary agent is triethylamine or dibutyltin dilaurate.
The thixotropic agent is fumed silica or polyamide wax.
The dispersant is prepared from polyvinylpyrrolidone and polyvinyl alcohol or cetyl trimethyl ammonium bromide in a mass ratio of 1: 1-1: 2, or a mixture thereof.
The invention provides a preparation method of the low-temperature conductive nano slurry for the heterojunction solar cell, which comprises the following steps:
step 1: mixing resin and a solvent, heating to 60-65 ℃, and preserving heat for 10-40 minutes to obtain a resin solution;
step 2: taking nano silver powder, nano tin powder and nano graphite powder for later use, wherein the mass ratio of the nano silver powder to the nano tin powder to the nano graphite powder is 60-70: 1-20: 1-10;
and 3, step 3: and dividing the resin solution and the dispersing agent into a first part, a second part and a third part according to the mass ratio of the nano silver powder, the nano tin powder and the nano graphite powder.
And 4, step 4: putting the nano silver powder and a first part of dispersant into a first part of resin solution, and uniformly stirring to obtain a first organic mixture;
and 5: placing the nano tin powder and a second part of dispersant into a second part of resin solution, and uniformly stirring to obtain a second organic mixture;
step 6: placing the nano graphite powder and a third dispersant into a third resin solution, and uniformly stirring to obtain a third organic mixture;
and 7: and (3) mixing and stirring the first organic mixture obtained in the step (4), the second organic mixture obtained in the step (5) and the third organic mixture obtained in the step (6) at 30-35 ℃, adding an auxiliary agent and a thixotropic agent, and uniformly mixing to obtain the low-temperature conductive nano-slurry for the heterojunction solar cell.
The invention provides the application of the low-temperature conductive nano-slurry for the heterojunction solar cell in the heterojunction solar cell, the curing temperature of the low-temperature conductive nano-slurry can be lower than 120 ℃, the low-temperature conductive nano-slurry is applied to the heterojunction solar cell, the process temperature of cell production can be effectively reduced, the conductivity is good, and the photoelectric conversion efficiency of the heterojunction solar cell can be improved.
Compared with the prior art, the invention has the following specific beneficial effects:
(1) the invention adopts the nano particles as the conductive functional phase, thereby effectively reducing the curing temperature of the slurry.
(2) The invention adopts nano tin and nano graphite powder particles as a part of the conductive functional phase, widens the raw material range of the conductive functional phase, and reduces the consumption of silver powder, thereby reducing the production cost of the slurry.
(3) The low-temperature nano slurry for the HIT solar cell, prepared by the invention, has good performance, can be cured at a temperature as low as 120 ℃ when being applied to a heterojunction solar cell, has good conductivity after being cured, and can improve the photoelectric conversion efficiency of the cell.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more apparent, the following specific examples further describe the present invention in detail. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example one
The mass percentage of the nano silver powder in the low-temperature conductive nano slurry for the HIT solar cell is 60%; the mass percentage of the nano tin powder in the low-temperature conductive nano slurry for the HIT solar cell is 10 percent; the mass percentage of the nano graphite powder in the low-temperature conductive nano slurry for the HIT solar cell is 10 percent; the weight percentage of the resin (the mixture of bisphenol A epoxy resin and polyurethane resin prepolymer in a mass ratio of 1: 1) in the low-temperature conductive nano-slurry for the HIT solar cell is 10%, the weight percentage of the solvent (the mixture of terpineol and diethylene glycol butyl ether acetate in a mass ratio of 1: 1) in the low-temperature conductive nano-slurry for the HIT solar cell is 9%, the weight percentage of the auxiliary agent (triethylamine) in the low-temperature conductive nano-slurry for the HIT solar cell is 0.5%, the weight percentage of the thixotropic agent (fumed silica) in the low-temperature conductive nano-slurry for the HIT solar cell is 0.3%, and the weight percentage of the dispersing agent (the mixture of polyvinylpyrrolidone and polyvinyl alcohol in a mass ratio of 1: 1) in the low-temperature conductive nano-slurry for the HIT solar cell is 0.2%.
The preparation process comprises the following steps:
mixing the resin and the solvent, heating to 60 ℃, and preserving the heat for 10 minutes to obtain a resin solution. The resin solution and the dispersant are divided into three parts according to the mass ratio of 6:1: 1. Respectively mixing three parts of resin solution and a dispersant with the nano silver powder, the nano tin powder and the nano graphite powder, and uniformly stirring to obtain a first organic mixture, a second organic mixture and a third organic mixture; and sequentially mixing and stirring the first organic mixture, the second organic mixture and the third organic mixture at 30 ℃, adding an auxiliary agent and a thixotropic agent, and uniformly mixing to obtain the low-temperature conductive nano-slurry for the heterojunction solar cell. The properties are as follows: curing temperature 120 ℃ and resistivity 1.1 x 10-5Omega cm, adhesion 5B, hardness 4H.
Example two
The mass percentage of the nano silver powder in the low-temperature conductive nano slurry for the HIT solar cell is 70%; the mass percentage of the nano tin powder in the low-temperature conductive nano slurry for the HIT solar cell is 1%; the mass percentage of the nano graphite powder in the low-temperature conductive nano slurry for the HIT solar cell is 9%; the mass percentage of the resin (a mixture of bisphenol A epoxy resin and polyurethane resin prepolymer in a mass ratio of 1: 2) in the low-temperature conductive nano-slurry for the HIT solar cell is 9%, the mass percentage of the solvent (a mixture of terpineol and diethylene glycol dibutyl ether in a mass ratio of 1: 3) in the low-temperature conductive nano-slurry for the HIT solar cell is 10%, the mass percentage of the auxiliary agent (dibutyltin dilaurate) in the low-temperature conductive nano-slurry for the HIT solar cell is 0.4%, the mass percentage of the thixotropic agent (fumed silica) in the low-temperature conductive nano-slurry for the HIT solar cell is 0.3%, and the mass percentage of the dispersing agent (a mixture of polyvinylpyrrolidone and hexadecyl trimethyl ammonium bromide in a mass ratio of 1: 2) in the low-temperature conductive nano-slurry for the HIT solar cell is 0.3%.
The preparation process comprises the following steps:
mixing the resin with the solvent, heating to 65 ℃, and preserving the heat for 15 minutes to obtain a resin solution. The resin solution and the dispersant are divided into three parts according to the mass ratio of 70:1: 9. Respectively mixing three parts of resin solution and a dispersant with the nano silver powder, the nano tin powder and the nano graphite powder, and uniformly stirring to obtain a first organic mixture, a second organic mixture and a third organic mixture; and sequentially mixing and stirring the first organic mixture, the second organic mixture and the third organic mixture at 31 ℃, adding an auxiliary agent and a thixotropic agent, and uniformly mixing to obtain the low-temperature conductive nano-slurry for the heterojunction solar cell. The properties are as follows: curing temperature 118 ℃ and resistivity 0.78 x 10-5Omega cm, adhesion 5B, hardness 4H.
EXAMPLE III
The mass percentage of the nano silver powder in the low-temperature conductive nano slurry for the HIT solar cell is 65 percent; the mass percentage of the nano tin powder in the low-temperature conductive nano slurry for the HIT solar cell is 5 percent; the mass percentage of the nano graphite powder in the low-temperature conductive nano slurry for the HIT solar cell is 10 percent; the mass percentage of the resin (the mixture of bisphenol A epoxy resin and polyurethane resin prepolymer in a mass ratio of 1: 3) in the low-temperature conductive nano-slurry for the HIT solar cell is 9%, the mass percentage of the solvent (the mixture of terpineol and diethylene glycol butyl ether acetate in a mass ratio of 1: 5) in the low-temperature conductive nano-slurry for the HIT solar cell is 10%, the mass percentage of the auxiliary agent (triethylamine) in the low-temperature conductive nano-slurry for the HIT solar cell is 0.4%, the mass percentage of the thixotropic agent (fumed silica) in the low-temperature conductive nano-slurry for the HIT solar cell is 0.3%, and the mass percentage of the dispersing agent (the mixture of polyvinylpyrrolidone and polyvinyl alcohol in a mass ratio of 1: 2) in the low-temperature conductive nano-slurry for the HIT solar cell is 0.3%.
The preparation process comprises the following steps:
mixing the resin with the solvent, heating to 60 ℃, and preserving the heat for 20 minutes to obtain a resin solution. The resin solution and the dispersant are divided into three parts according to the mass ratio of 13:1: 2. Respectively mixing three parts of resin solution and a dispersant with the nano silver powder, the nano tin powder and the nano graphite powder, and uniformly stirring to obtain a first organic mixture, a second organic mixture and a third organic mixture; and sequentially mixing and stirring the first organic mixture, the second organic mixture and the third organic mixture at 35 ℃, adding an auxiliary agent and a thixotropic agent, and uniformly mixing to obtain the low-temperature conductive nano-slurry for the heterojunction solar cell. The properties are as follows: curing temperature 115 ℃ and resistivity 1.1 x 10-5Omega cm, adhesion 5B, hardness 4H.
Example four
The mass percentage of the nano silver powder in the low-temperature conductive nano slurry for the HIT solar cell is 67%; the mass percentage of the nano tin powder in the low-temperature conductive nano slurry for the HIT solar cell is 6 percent; the mass percentage of the nano graphite powder in the low-temperature conductive nano slurry for the HIT solar cell is 7%; the mass percentage of the resin (a mixture of bisphenol A epoxy resin and polyurethane resin prepolymer in a mass ratio of 1: 1.5) in the low-temperature conductive nano-slurry for the HIT solar cell is 10%, the mass percentage of the solvent (a mixture of terpineol and diethylene glycol dibutyl ether in a mass ratio of 1: 3) in the low-temperature conductive nano-slurry for the HIT solar cell is 9.2%, the mass percentage of the auxiliary agent (dibutyltin dilaurate) in the low-temperature conductive nano-slurry for the HIT solar cell is 0.3%, the mass percentage of the thixotropic agent (polyamide wax) in the low-temperature conductive nano-slurry for the HIT solar cell is 0.2%, and the mass percentage of the dispersing agent (a mixture of polyvinylpyrrolidone and polyvinyl alcohol in a mass ratio of 1: 1.5) in the low-temperature conductive nano-slurry for the HIT solar cell is 0.3%.
The preparation process comprises the following steps:
and mixing the resin with the solvent, heating to 65 ℃, and preserving the heat for 40 minutes to obtain a resin solution. The resin solution and the dispersant are divided into three parts according to the mass ratio of 67:6: 7. Respectively mixing three parts of resin solution and a dispersing agent with the nano silver powder, the nano tin powder and the nano graphite powder, and uniformly stirring to obtain a first organic mixture, a second organic mixture and a third organic mixture; and sequentially mixing and stirring the first organic mixture, the second organic mixture and the third organic mixture at 33 ℃, adding an auxiliary agent and a thixotropic agent, and uniformly mixing to obtain the low-temperature conductive nano-slurry for the heterojunction solar cell. The properties are as follows: curing temperature 110 ℃ and resistivity 0.8 x 10-5Omega cm, adhesion 5B, hardness 4H.
EXAMPLE five
The mass percentage of the nano silver powder in the low-temperature conductive nano slurry for the HIT solar cell is 64%; the mass percentage of the nano tin powder in the low-temperature conductive nano slurry for the HIT solar cell is 12%; the mass percentage of the nano graphite powder in the low-temperature conductive nano slurry for the HIT solar cell is 4%; the mass percentage of the resin (a mixture of bisphenol A epoxy resin and polyurethane resin prepolymer in a mass ratio of 1: 2.5) in the low-temperature conductive nano-slurry for the HIT solar cell is 11%, the mass percentage of the solvent (a mixture of terpineol and diethylene glycol dibutyl ether in a mass ratio of 1: 3) in the low-temperature conductive nano-slurry for the HIT solar cell is 8.3%, the mass percentage of the auxiliary agent (triethylamine) in the low-temperature conductive nano-slurry for the HIT solar cell is 0.4%, the mass percentage of the thixotropic agent (polyamide wax) in the low-temperature conductive nano-slurry for the HIT solar cell is 0.2%, and the mass percentage of the dispersing agent (a mixture of polyvinylpyrrolidone and polyvinyl alcohol in a mass ratio of 1: 1.6) in the low-temperature conductive nano-slurry for the HIT solar cell is 0.1%.
The preparation process comprises the following steps:
mixing the resin and the solvent, heating to 60 ℃, and preserving the heat for 18 minutes to obtain a resin solution. Dividing the resin solution and the dispersant according to the mass ratio of 16:3:1Is divided into three parts. Respectively mixing three parts of resin solution and a dispersant with the nano silver powder, the nano tin powder and the nano graphite powder, and uniformly stirring to obtain a first organic mixture, a second organic mixture and a third organic mixture; and sequentially mixing and stirring the first organic mixture, the second organic mixture and the third organic mixture at 35 ℃, adding an auxiliary agent and a thixotropic agent, and uniformly mixing to obtain the low-temperature conductive nano-slurry for the heterojunction solar cell. The properties are as follows: curing temperature 115 ℃ and resistivity 0.85 x 10-5Omega cm, adhesion 5B, hardness 4H.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principles of the present invention are intended to be included therein.
Claims (8)
1. The low-temperature conductive nano slurry for the heterojunction solar cell is characterized in that: comprises nano silver powder, nano tin powder, nano graphite powder, resin, a solvent, an auxiliary agent, a thixotropic agent and a dispersing agent; preparing conductive slurry for the heterojunction solar cell by combining a solvent, an auxiliary agent, a thixotropic agent and a dispersing agent by taking nano particles as a conductive functional phase of the slurry and resin as a bonding phase;
the mass percentages of the components are as follows:
nano silver powder: 60 to 70 percent;
nano tin powder: 1 to 20 percent;
nano graphite powder: 1 to 10 percent;
resin: 5 to 15 percent;
solvent: 5 to 15 percent;
auxiliary agent: 0.3 to 0.5 percent;
thixotropic agent: 0.1 to 0.3 percent;
dispersing agent: 0.1 to 0.3 percent;
the preparation method of the low-temperature conductive nano slurry for the heterojunction solar cell comprises the following steps:
step 1: mixing resin and a solvent, heating to 60-65 ℃, and preserving heat for 10-40 minutes to obtain a resin solution;
step 2: taking nano silver powder, nano tin powder and nano graphite powder for later use, wherein the mass ratio of the nano silver powder to the nano tin powder to the nano graphite powder is 60-70: 1-20: 1-10;
and step 3: respectively mixing the resin solution and the dispersing agent according to the mass ratio of the nano silver powder, the nano tin powder and the nano graphite powder of 60-70: 1-20: 1-10 is divided into a first part, a second part and a third part;
and 4, step 4: putting the nano silver powder and a first part of dispersant into a first part of resin solution, and uniformly stirring to obtain a first organic mixture;
and 5: placing the nano tin powder and a second part of dispersant into a second part of resin solution, and uniformly stirring to obtain a second organic mixture;
step 6: placing the nano graphite powder and a third dispersant into a third resin solution, and uniformly stirring to obtain a third organic mixture;
and 7: and (3) mixing and stirring the first organic mixture obtained in the step (4), the second organic mixture obtained in the step (5) and the third organic mixture obtained in the step (6) at 30-35 ℃, adding an auxiliary agent and a thixotropic agent, and uniformly mixing to obtain the low-temperature conductive nano-slurry for the heterojunction solar cell.
2. The low temperature conductive nanopaste for a heterojunction solar cell of claim 1, wherein: the particle diameter of the nano silver powder is the maximum particle diameter D100<300nm, median particle diameter D50<100nm；
The particle diameter of the nano tin powder is the maximum particle diameter D100<300nm, median particle diameter D50<100nm；
The maximum particle diameter D of the nano graphite powder100<300nm, median particle diameter D50<100nm。
3. The low temperature conductive nanopaste for heterojunction solar cells of claim 1, wherein the resin is: the bisphenol A type epoxy resin and the polyurethane resin prepolymer are mixed according to the mass ratio of 1: 1-1: 3 in a mixture of two or more.
4. The low-temperature conductive nano-slurry for a heterojunction solar cell of claim 1, wherein the solvent is: the mass ratio of terpineol to diethylene glycol butyl ether acetate or diethylene glycol dibutyl ether is 1: 1-1: 5 in a mixture.
5. The low temperature conductive nanopaste for heterojunction solar cells of claim 1, wherein the adjuvant is triethylamine or dibutyltin dilaurate.
6. The low temperature conductive nanopaste for heterojunction solar cells of claim 1, wherein the thixotropic agent is fumed silica or a polyamide wax.
7. The low-temperature conductive nano-slurry for the heterojunction solar cell of claim 1, wherein the dispersant is: the mass ratio of the polyvinylpyrrolidone to the polyvinyl alcohol or the hexadecyl trimethyl ammonium bromide is 1: 1-1: 2, or a mixture thereof.
8. The application of the low-temperature conductive nano-slurry for the heterojunction solar cell in the heterojunction solar cell as defined in any one of claims 1 to 7 is characterized in that: the curing temperature of the low-temperature conductive nano slurry is as low as 120 ℃, and the low-temperature conductive nano slurry is applied to the heterojunction solar cell, so that the process temperature of the production of a cell piece can be effectively reduced, and the photoelectric conversion efficiency of the heterojunction solar cell is improved.
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| CN102708943A (en) * | 2012-06-04 | 2012-10-03 | 惠州市富济电子材料有限公司 | Low-temperature sintered highly-heat-conductive and highly-electric-conductive silver paste, preparation method and sintering method |
| CN108777184A (en) * | 2018-05-31 | 2018-11-09 | 钦州学院 | The compound silver electrode paste of crystal silicon solar energy battery high solderability and preparation method |
| CN109801735A (en) * | 2018-12-24 | 2019-05-24 | 上海银浆科技有限公司 | A kind of hetero-junction solar cell low temperature silver paste and preparation method |
| CN109949966A (en) * | 2019-03-26 | 2019-06-28 | 浙江光达电子科技有限公司 | A kind of high reliability PERC crystal silicon solar batteries back side conductive silver slurry and its preparation process |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102708943A (en) * | 2012-06-04 | 2012-10-03 | 惠州市富济电子材料有限公司 | Low-temperature sintered highly-heat-conductive and highly-electric-conductive silver paste, preparation method and sintering method |
| CN108777184A (en) * | 2018-05-31 | 2018-11-09 | 钦州学院 | The compound silver electrode paste of crystal silicon solar energy battery high solderability and preparation method |
| CN109801735A (en) * | 2018-12-24 | 2019-05-24 | 上海银浆科技有限公司 | A kind of hetero-junction solar cell low temperature silver paste and preparation method |
| CN109949966A (en) * | 2019-03-26 | 2019-06-28 | 浙江光达电子科技有限公司 | A kind of high reliability PERC crystal silicon solar batteries back side conductive silver slurry and its preparation process |
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