CN112259664A - 一种集成ir光源器件及其封装方法 - Google Patents
一种集成ir光源器件及其封装方法 Download PDFInfo
- Publication number
- CN112259664A CN112259664A CN202011273160.5A CN202011273160A CN112259664A CN 112259664 A CN112259664 A CN 112259664A CN 202011273160 A CN202011273160 A CN 202011273160A CN 112259664 A CN112259664 A CN 112259664A
- Authority
- CN
- China
- Prior art keywords
- optical window
- light source
- source device
- integrated
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 21
- 230000003287 optical effect Effects 0.000 claims abstract description 72
- 229910052751 metal Inorganic materials 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 49
- 238000003466 welding Methods 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 230000008569 process Effects 0.000 claims abstract description 32
- 229910000679 solder Inorganic materials 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 230000004927 fusion Effects 0.000 claims abstract description 14
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 9
- 239000011147 inorganic material Substances 0.000 claims abstract description 9
- 238000007747 plating Methods 0.000 claims description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 238000004021 metal welding Methods 0.000 claims description 8
- 238000001465 metallisation Methods 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 230000005496 eutectics Effects 0.000 claims description 3
- 229910000833 kovar Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 2
- 230000004907 flux Effects 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 238000000576 coating method Methods 0.000 abstract description 8
- 238000005245 sintering Methods 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 description 5
- 230000010354 integration Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000005253 cladding Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- -1 graphite alkene Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
本发明公开了一种集成IR光源器件及其封装方法,其技术方案的要点是该集成IR光源器件包括有基板,在基板的***设有金属化线路层,在金属化线路层上设有光窗盖板,光窗盖板包括有金属件,在金属件上分别设有通光孔、盖住通光孔的光窗透镜,光窗盖板设于基板的上方使光窗盖板与基板之间形成腔体,在腔体内设有芯片组,芯片组固定在基板上。本发明基板、金属件、光窗透镜均采用无机材料,焊料、金属化线路层以及所有的镀层也采用无机材料,采用烧结工艺或熔焊工艺将光窗透镜与金属件封接为一体制成光窗盖板,采用电阻焊或熔焊工艺将光窗盖板与基板结合为一体制成LED器件,实现高气密性、无机封装。
Description
【技术领域】
本发明涉及光源器件封装领域,尤其是涉及一种集成IR光源器件及其封装方法。
【背景技术】
随着LED技术的日渐成熟,LED在各行各业得到了广泛应用。近年来5G技术的发展带动了万物互联、智能家居,赋予了光不同的含义,其中红外LED在安防、人脸识别、机器视觉、智能控制、食品检测及医疗上起到了重要作用。传统红外LED灯珠为环氧树脂或硅胶形式封装,波段集中在660-940nm近红外范围,在需要照明或补光的应用中通常采用红外LED灯珠和白光LED灯珠分别贴装在同一PCB电路板上由相应电路控制各自功能实现,使得此类应用产品尺寸小型化,集成化受LED灯珠数量及排布影响较大,因此将白光与红外芯片集成封装为一体能很好的满足应用需求,同时集成后的IR光源器件相较于单一白光与红外分离器件具有更好的性价比和可靠性。尤其是大功率IR光源器件在户外或公共场所的应用中光源的理化特性和环境因素易使硅胶或环氧树脂等有机材料老化、黄变,透氧透湿和透光特性发生变化导致器件失效或死灯,传统意义上的硅胶或环氧树脂封装形式不能很好的满足此类产品的可靠性要求及特定应用,因此寻求一种集成化、气密性封装的IR光源器件较为迫切。
【发明内容】
本发明目的是克服了现有技术的不足,提供一种集成IR光源器件及其封装方法,相较于传统IR光源,将白光与红外LED集成为一体,实现了照明或补光为一体的红外LED光源器件,具有功能集成以及高气密性封装。
本发明是通过以下技术方案实现的:
一种集成IR光源器件,其特征在于:包括有基板2,在所述基板2的***设有金属化线路层4,在所述金属化线路层4上设有光窗盖板1,所述光窗盖板1包括有金属件101,在金属件101上分别设有通光孔、盖住所述通光孔的光窗透镜102,所述光窗盖板1带有腔体结构,光窗盖板1设于所述基板2的上方使所述光窗盖板1与所述基板2之间形成腔体6,在所述腔体6内设有芯片组3,所述芯片组3固定在所述基板2上,所述基板2为平面结构。
如上所述的集成IR光源器件,其特征在于:所述芯片组3为白光芯片301、红外芯片302的组合。
如上所述的集成IR光源器件,其特征在于:所述芯片组3为紫外芯片、红外芯片的组合或者白光芯片、红外芯片、紫外芯片的组合。
如上所述的集成IR光源器件,其特征在于:所述光窗透镜102与所述金属件101之间设有将光窗透镜102、金属件101焊接连接的焊料5,所述焊料5由无机材料制成。
如上所述的集成IR光源器件,其特征在于:所述基板2的材质为陶瓷、铝材、铜材、铝碳化硅基板中的一种。
如上所述的集成IR光源器件,其特征在于:所述光窗透镜102的材质为石英玻璃,所述光窗透镜102的形状为方形、圆形、椭球形、半球形中的一种。
如上所述的集成IR光源器件,其特征在于:所述金属件101的材质为科瓦合金或铜或铝,所述金属件101底部边沿部分设有延伸出的金属焊边,所述金属焊边与所述金属化线路层4焊接连接,所述金属焊边的宽度H1≧0.3毫米,所述金属化线路层4的厚度H2≧60微米,所述金属化线路层4表面设有镀层,所述镀层的材质为金或镍金;所述金属件101表面设有镀镍层,所述腔体6的深度H3≧0.5毫米。
一种如上所述集成IR光源器件的封装方法,其特征在于包括有:
芯片组3通过锡膏、银胶固晶或共晶工艺绑定在基板2上;
在所述基板2边沿设置有环形的金属化线路层4,金属化线路层4线路层厚度不低于60um,金属化线路层4表面镀金或镍金处理;
通过模具冲压制作所述金属件101,所述金属件101表面做镀镍处理;
切割与所述通光孔大小匹配的石英玻璃片制成光窗透镜102,对光窗透镜102边缘≦0.5毫米的环形区域做镀层处理,镀层厚度≧10微米,将光窗透镜102通过工装治具装入金属件101内,采用熔焊工艺将光窗透镜102边缘镀层区域与金属件101匹配接触部位进行熔接制成光窗盖板1,或者添加焊料5将光窗透镜102与金属件101烧结成光窗盖板1;
光窗盖板1经治具组装到基板2的金属化线路层4上,通过电阻焊工艺或熔焊工艺将光窗盖板1与基板2封接为一体,制成集成IR光源器件。
如上所述集成IR光源器件的封装方法,其特征在于:所述电阻焊工艺为平行缝焊,所述熔焊工艺为激光焊。
如上所述集成IR光源器件的封装方法,其特征在于:所述焊料5的组分为TiCuBiZnMn,其中Ti占6.8%-25%、Cu占19.6%-34%、Bi占4.2%-7.3%、Zn占21%-37%、Mn占0.56%-1.2%;所述光窗透镜102边缘的镀层组分为镍金或铜。
与现有技术相比,本发明有如下优点:
1、本发明基板、金属件、光窗透镜均采用无机材料,焊料、金属化线路层以及所有的镀层也采用无机材料,采用烧结工艺或熔焊工艺将光窗透镜与金属件封接为一体制成光窗盖板,采用电阻焊或熔焊工艺将光窗盖板与基板结合为一体制成LED器件,实现高气密性、无机封装。
2、本发明相较于传统IR光源器件,因为多个芯片共用一套光窗盖板和基板,采用无机封装技术集成,体积大大减小,可靠性和性价比大大提高。
【附图说明】
图1是本发明集成IR光源器件的基板示意图;
图2是本发明实施例一的整体结构剖视示意图,图中光窗透镜的形状为方形或圆形,基板为平面结构,光窗透镜与金属件烧结连接;
图3是本发明实施例二的整体结构剖视示意图,图中光窗透镜的形状为半球形或椭球形,基板为平面结构,光窗透镜与金属件烧结连接;
图4是本发明实施例三的整体结构剖视示意图,图中光窗透镜的形状为方形或圆形,基板为腔体结构,光窗透镜与金属件熔焊连接;
图5是本发明实施例四的整体结构剖视示意图,图中光窗透镜的形状为半球形或椭球形,基板为腔体结构,光窗透镜与金属件熔焊连接;
图中:1为光窗盖板;101为金属件;102为光窗透镜;2为基板;3为芯片组;301为白光芯片;302为红外芯片;4为金属化线路层;5为焊料;6为腔体;7为焊盘。
【具体实施方式】
下面结合附图对本发明技术特征作进一步详细说明以便于所述领域技术人员能够理解。
一种LED器件,包括有基板2,在所述基板2的***设有金属化线路层4,在所述金属化线路层4上设有光窗盖板1,所述光窗盖板1包括有金属件101,在金属件101上分别设有通光孔、盖住所述通光孔的光窗透镜102,光窗盖板1的尺寸与基板2尺寸匹配,所述光窗盖板1带有腔体结构,光窗盖板1设于所述基板2的上方使所述光窗盖板1与所述基板2之间形成腔体6,在所述腔体6内设有芯片组3,芯片组3固定在所述基板2上。
本专利所述芯片组3优选为白光芯片301、红外芯片302的组合,如图1所示;图1中共有四个焊盘7,其中两个焊盘7上设有白光芯片301,红外芯片302设在第三个焊盘7上并通过金属引线与第四个焊盘7连接。
本专利与申请人同日申请的《一种LED器件及其封装方法》专利的区别在其应用,本专利是将无机封装的结构及方法应用在集成有多个芯片的IR光源器件上,解决传统IR光源器件体积大、功率小、可靠性差、寿命短等问题。
当然,所述芯片组3也可以为紫外芯片、红外芯片的组合或者白光芯片、红外芯片、紫外芯片的组合等。
所述光窗盖板1形状不限于方形、圆形等。所述光窗盖板1与所述基板2之间形成的腔体6深度H3≧0.5毫米,所述基板2可以为平面结构或为带有台阶的腔体结构,当基板2为平面结构时,对应的光窗盖板1为腔体结构;当基板2为带有台阶的腔体结构时,对应的光窗盖板1为平面结构,该台阶高度H4≧0.35毫米,便于匹配组装封接时不碰伤金线。
在基板2上设有电路图案,所述基板2的材质可以为陶瓷基板,也可以为金属基板如铝材、铜材等,还可以采用其它具有高导热和反光特性的复合材料,如铝碳化硅基板、涂有石墨烯的金属基板等。
进一步地,在陶瓷基板表面镀铝或采用高反射涂料材质,如PTFE,进一步提升不可见光波段特别是UVC波段器件的整体出光性能。
当光窗透镜102与金属件101烧结连接时,所述光窗透镜102与所述金属件101之间设有将光窗透镜102、金属件101焊接连接的焊料5,所述焊料5呈环形,所述焊料5由无机材料制成。所述焊料5的组分为TiCuBiZnMn,其中Ti占6.8%-25%、Cu占19.6%-34%、Bi占4.2%-7.3%、Zn占21%-37%、Mn占0.56%-1.2%。
所述光窗透镜102与所述金属件101也可以通过熔焊连接,则不需要焊料5。
如上所述的LED器件,所述光窗透镜102材质为石英玻璃,所述光窗透镜102的形状优选为方形、圆形、椭球形、半球形中的一种,当光窗透镜102形状不同时,为便于焊接,金属件101的形状也会作适应性变化,如图中的实施例一和实施例二。
如上所述的LED器件,所述金属件101的材质为科瓦合金或铜或铝,且金属件101表面需做镀镍,所述金属件101底部边沿部分有延伸出的金属焊边,所述金属焊边的宽度H1≧0.3毫米,所述金属焊边与所述金属化线路层4焊接连接,金属化线路层4的作用是通过电阻焊或熔焊工艺将光窗盖板1与基板2封接为一体;所述金属化线路层4也为环形,其厚度H2≧60微米,所述金属化线路层4表面设有镀层,所述镀层的材质为金或镍金。
本专利还请求保护一种如上所述LED器件的封装方法,具体如下:
在所述基板2边沿设置有环形金属化线路层4,金属化线路层4的厚度H2≧60微米,金属化线路层4表面镀金或镍金处理;
芯片组3通过锡膏、银胶固晶或共晶工艺绑定在基板2上;
通过精密模具冲压制作所述金属件101,所述金属件101表面做镀镍处理;
切割与所述通光孔大小匹配的石英玻璃片制成光窗透镜102,对光窗透镜102边缘≦0.5毫米的环形区域做镀层处理,镀层组分为镍金或铜,镀层厚度≧10微米,将光窗透镜102通过工装治具装入金属件101内,采用熔焊工艺对石英玻璃边缘镀层区域与金属件匹配接触部位进行熔接制成光窗盖板1,该熔接过程需在特定气氛环境下(如高纯度氮气或氮气与氦气混合气氛)进行以达到较好的气密性效果。
或者添加焊料5采用烧结工艺将光窗透镜102与金属件101封接成光窗盖板1。
光窗盖板1经治具组装到基板2的金属化线路层4上,通过电阻焊工艺或熔焊工艺将光窗盖板1与基板2封接为一体,制成LED器件。
进一步地,所述电阻焊工艺为平行缝焊,所述熔焊工艺为激光焊。
本发明基板2、金属件101、光窗透镜102均采用无机材料,焊料、金属化线路层以及所有的镀层也采用无机材料,采用烧结工艺或熔焊工艺将光窗透镜102与金属件101封接为一体制成光窗盖板,采用电阻焊或熔焊工艺将光窗盖板与基板2结合为一体制成LED器件,实现高气密性、无机封装。
本发明相较于传统LED光源,具有气密性好、无机封装、结构简单,主要应用于对气密性及可靠性要求高和不适宜有机材料封装的光源器件。尤其是UVC和大功率IR LED光源器件中,能较好的解决现有胶封和同类型无机封装方案中玻璃或石英光窗易掉透镜、器件光衰严重和气密性不足的问题。
本发明所述的实施例仅仅是对本发明的优选实施方式进行的描述,并非对发明构思和范围进行限定,在不脱离本发明设计思想的前提下,本领域中工程技术人员对本发明的技术方案作出的各种变型和改进,均应落入本发明的保护范围。
Claims (10)
1.一种集成IR光源器件,其特征在于:包括有基板(2),在所述基板(2)的***设有金属化线路层(4),在所述金属化线路层(4)上设有光窗盖板(1),所述光窗盖板(1)包括有金属件(101),在金属件(101)上分别设有通光孔、盖住所述通光孔的光窗透镜(102),所述光窗盖板(1)带有腔体结构,光窗盖板(1)设于所述基板(2)的上方使所述光窗盖板(1)与所述基板(2)之间形成腔体(6),在所述腔体(6)内设有芯片组(3),所述芯片组(3)固定在所述基板(2)上,所述基板(2)为平面结构。
2.根据权利要求1所述的集成IR光源器件,其特征在于:所述芯片组(3)为白光芯片(301)、红外芯片(302)的组合。
3.根据权利要求1所述的集成IR光源器件,其特征在于:所述芯片组(3)为紫外芯片、红外芯片的组合或者白光芯片、红外芯片、紫外芯片的组合。
4.根据权利要求2或3所述的集成IR光源器件,其特征在于:所述光窗透镜(102)与所述金属件(101)之间设有将光窗透镜(102)、金属件(101)焊接连接的焊料(5),所述焊料(5)由无机材料制成。
5.根据权利要求2或3所述的集成IR光源器件,其特征在于:所述基板(2)的材质为陶瓷、铝材、铜材、铝碳化硅基板中的一种。
6.根据权利要求2或3所述的集成IR光源器件,其特征在于:所述光窗透镜(102)的材质为石英玻璃,所述光窗透镜(102)的形状为方形、圆形、椭球形、半球形中的一种。
7.根据权利要求2或3所述的集成IR光源器件,其特征在于:所述金属件(101)的材质为科瓦合金或铜或铝,所述金属件(101)底部边沿部分设有延伸出的金属焊边,所述金属焊边与所述金属化线路层(4)焊接连接,所述金属焊边的宽度H1≧0.3毫米,所述金属化线路层(4)的厚度H2≧60微米,所述金属化线路层(4)表面设有镀层,所述镀层的材质为金或镍金;所述金属件(101)表面设有镀镍层,所述腔体(6)的深度H3≧0.5毫米。
8.一种权利要求1至6任一项所述集成IR光源器件的封装方法,其特征在于包括有:
芯片组(3)通过锡膏、银胶固晶或共晶工艺绑定在基板(2)上;
在所述基板(2)边沿设置有环形的金属化线路层(4),金属化线路层(4)线路层厚度不低于60um,金属化线路层(4)表面镀金或镍金处理;
通过模具冲压制作所述金属件(101),所述金属件(101)表面做镀镍处理;
切割与所述通光孔大小匹配的石英玻璃片制成光窗透镜(102),对光窗透镜(102)边缘≦0.5毫米的环形区域做镀层处理,镀层厚度≧10微米,将光窗透镜(102)通过工装治具装入金属件(101)内,采用熔焊工艺将光窗透镜(102)边缘镀层区域与金属件(101)匹配接触部位进行熔接制成光窗盖板(1),或者添加焊料(5)将光窗透镜(102)与金属件(101)烧结成光窗盖板(1);
光窗盖板(1)经治具组装到基板(2)的金属化线路层(4)上,通过电阻焊工艺或熔焊工艺将光窗盖板(1)与基板(2)封接为一体,制成集成IR光源器件。
9.根据权利要求8所述集成IR光源器件的封装方法,其特征在于:所述电阻焊工艺为平行缝焊,所述熔焊工艺为激光焊。
10.根据权利要求8所述集成IR光源器件的封装方法,其特征在于:所述焊料(5)的组分为TiCuBiZnMn,其中Ti占6.8%-25%、Cu占19.6%-34%、Bi占4.2%-7.3%、Zn占21%-37%、Mn占0.56%-1.2%;所述光窗透镜(102)边缘的镀层组分为镍金或铜。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011273160.5A CN112259664A (zh) | 2020-11-14 | 2020-11-14 | 一种集成ir光源器件及其封装方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011273160.5A CN112259664A (zh) | 2020-11-14 | 2020-11-14 | 一种集成ir光源器件及其封装方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN112259664A true CN112259664A (zh) | 2021-01-22 |
Family
ID=74265816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202011273160.5A Pending CN112259664A (zh) | 2020-11-14 | 2020-11-14 | 一种集成ir光源器件及其封装方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112259664A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115781115A (zh) * | 2022-11-17 | 2023-03-14 | 青岛航天半导体研究所有限公司 | 一种扇形外壳的平行缝焊方法 |
-
2020
- 2020-11-14 CN CN202011273160.5A patent/CN112259664A/zh active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115781115A (zh) * | 2022-11-17 | 2023-03-14 | 青岛航天半导体研究所有限公司 | 一种扇形外壳的平行缝焊方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100590779C (zh) | 表面贴装多通道光耦合器 | |
US8120052B2 (en) | Flip chip type LED lighting device manufacturing method | |
CN100423306C (zh) | 发光二极管封装的制造方法 | |
CN104282819B (zh) | 倒装式发光二极管封装模块及其制造方法 | |
KR100978028B1 (ko) | 발광장치 | |
CN203205453U (zh) | 一种半导体发光芯片、及半导体照明灯具 | |
JP2003218398A (ja) | 表面実装型発光ダイオード及びその製造方法 | |
CN102185090B (zh) | 一种采用cob封装的发光器件及其制造方法 | |
CN213242589U (zh) | 一种发光角度可调的紫外led器件 | |
CN101630668B (zh) | 化合物半导体元件及光电元件的封装结构及其制造方法 | |
CA2496937A1 (en) | Power surface mount light emitting die package | |
KR20070078169A (ko) | 발광 다이오드 패키지 및 그 제조 방법 | |
CN100379036C (zh) | 表面安装型发光二极管 | |
CN1129968C (zh) | 发光二极管的封装方法 | |
CN112259667A (zh) | 一种led器件及其封装方法 | |
CN100388513C (zh) | 发光器件及其封装结构以及该封装结构的制造方法 | |
CN112259664A (zh) | 一种集成ir光源器件及其封装方法 | |
CN213845306U (zh) | 一种集成ir光源器件 | |
EP1524705B1 (en) | Flip chip type LED lighting device and its manufacturing method | |
CN213845305U (zh) | 一种大功率红外光源 | |
CN213845304U (zh) | 一种uvled模组 | |
CN213845303U (zh) | 一种无机封装的led器件 | |
CN213845317U (zh) | 一种新型led器件 | |
CN214313248U (zh) | 高光效led | |
CN103474564A (zh) | Cob封装结构及cob封装方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |