CN112251717A - Heating device, preparation method of heating device and high-temperature heating equipment - Google Patents
Heating device, preparation method of heating device and high-temperature heating equipment Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 11
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- 229910033181 TiB2 Inorganic materials 0.000 claims abstract description 93
- 238000004544 sputter deposition Methods 0.000 claims abstract description 76
- 239000004065 semiconductor Substances 0.000 claims abstract description 61
- 239000011159 matrix material Substances 0.000 claims abstract description 15
- 239000013077 target material Substances 0.000 claims abstract description 14
- 230000001681 protective effect Effects 0.000 claims abstract description 12
- 230000003064 anti-oxidating effect Effects 0.000 claims abstract description 11
- 230000003647 oxidation Effects 0.000 claims abstract description 11
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 19
- 150000002500 ions Chemical class 0.000 claims description 18
- 239000011261 inert gas Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 3
- 230000003116 impacting effect Effects 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract description 9
- 239000000919 ceramic Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 229910018487 Ni—Cr Inorganic materials 0.000 description 5
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical group [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
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- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
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- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 239000003345 natural gas Substances 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
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- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
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- 238000009841 combustion method Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/067—Borides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24C—DOMESTIC STOVES OR RANGES ; DETAILS OF DOMESTIC STOVES OR RANGES, OF GENERAL APPLICATION
- F24C7/00—Stoves or ranges heated by electric energy
- F24C7/06—Arrangement or mounting of electric heating elements
- F24C7/062—Arrangement or mounting of electric heating elements on stoves
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- Chemical Kinetics & Catalysis (AREA)
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Abstract
The invention provides a heating device which is ultrathin, good in high-temperature resistance, safe, reliable, high in heating efficiency, simple in structure and oxidation-resistant, a preparation method of the device and high-temperature heating equipment comprising the heating device. The heating device comprises an insulating base body layer (1), a titanium diboride semiconductor film layer (2) is sputtered on one surface of the insulating base body layer, and an anti-oxidation and insulating protection film layer (3) is sputtered outside the titanium diboride semiconductor film layer; the preparation method comprises the following steps: a. preparing an insulating matrix layer and preparing a titanium diboride target; b. sputtering a titanium diboride target material onto the surface of the insulating matrix layer and preparing an electrode; c. sputtering a layer of anti-oxidation and insulation protective film layer (3) on the surface of the formed titanium diboride semiconductor film layer; the high-temperature heating equipment comprises a main body (4), wherein a heating plate (5) is arranged on the surface of the main body, and a heating device is attached to the lower surface of the heating plate. The invention is used in the field of high-temperature heating.
Description
Technical Field
The invention relates to the field of high-temperature heating equipment, in particular to a heating device, a preparation method of the heating device and high-temperature heating equipment comprising the heating device.
Background
At present, the heating mode of the heating cooker in the prior art mainly includes the following modes.
One is the conventional gas or natural gas combustion heat generation. However, the direct combustion method based on coal gas and natural gas can cause a large amount of carbon emission, and carbon dioxide diffuses living environment, thereby causing environmental pollution and bringing unsafe factors.
The second is electromagnetic field conversion heating of the induction cooker. According to the mode, the eddy current phenomenon is generated on a metal appliance, metal molecules move at a high speed in a random manner by the eddy current, and the molecules collide and rub with each other to generate heat energy, but the molecular collision and rubbing processes of the mode can damage the molecular structure of food, so that the original taste and nutrition of the food cannot be kept, and the radiation of low-frequency electromagnetic waves is generated in the working process. The electromagnetic field conversion heating is an intermittent heating mode, the heating continuity is not enough, the temperature controllability is not strong, and the high-temperature stir-frying effect is not achieved. And can only be carried out by using metal appliances, which in turn brings about serious pollution of heavy metals to food.
The third is a nickel-chromium wire electric ceramic furnace, the mode generates direct heat energy by electrifying and heating the nickel-chromium wire of the furnace plate, but the service life of the furnace plate is generally 1-3 years because the nickel-chromium wire is in a high-temperature state, the aging process of the nickel-chromium wire is fast, and the furnace plate for placing the nickel-chromium wire can melt the heating wire instantly by naked fire after the dust of the furnace plate powder is deposited in the gap of the high-temperature heating wire in a long-term high-temperature state.
In addition, at present, a heating device is also assembled by embedding a tungsten filament with silicon nitride powder, hot-pressing and sintering the tungsten filament at 1700 ℃, polishing the sintered body, and soldering an electrode. However, the hot pressing sintering in the prior art has low productivity and high cost, and is extremely difficult to realize mass production. And the thermal expansion coefficients of the tungsten filament and the silicon nitride are greatly different, so that the element device is cracked during heating, and the reliability is to be improved. In addition, the heating wires or heating sheets adopted in the prior art generally have the phenomenon of low thermal efficiency, and the energy consumption is serious, thereby causing unnecessary electric energy waste.
In addition, social development and life have higher requirements on green power utilization environment and healthy energy-saving life style, and people have urgent need for unprecedented qualitative changes on the use of novel green heating materials, styles and derived utensils.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide the heating device which is ultrathin, good in high-temperature resistance, safe, reliable, high in heating efficiency, simple in structure and oxidation-resistant.
The invention also provides a preparation method of the heating device, which is simple in process, can realize large-scale production and has higher production efficiency and capacity.
The invention also provides high-temperature heating equipment comprising the heating device, and the electric ceramic furnace has the advantages of quick temperature rise, high safety and good energy-saving effect.
The heating device adopts the technical scheme that: the heating device comprises an insulating base body layer, wherein a titanium diboride semiconductor film layer is sputtered on one surface of the insulating base body layer, and an anti-oxidation and insulating protection film layer is sputtered outside the titanium diboride semiconductor film layer.
The insulating matrix layer is an alumina ceramic matrix layer.
The oxidation-resistant and insulating protective film layer is an aluminum oxide film layer.
The thickness range of the titanium diboride semiconductor film layer is 0.1-10 mu m.
The thickness of the insulating matrix layer is 0.5-3 mm.
The heating device adopts the insulating base body layer as the base body, the titanium diboride semiconductor film layer is combined on the insulating base body layer, and the anti-oxidation and insulation protection film layer is combined outside the titanium diboride semiconductor film layer, so that the anti-oxidation and insulation protection effects on the titanium diboride semiconductor film layer can be achieved through the anti-oxidation and insulation protection film layer, and the power utilization safety is ensured; the titanium diboride semiconductor film has the semiconductor characteristic, when the heating temperature reaches a certain value, the energy consumption is reduced, so that the electric energy is greatly saved, the better energy efficiency performance is achieved, and the titanium diboride semiconductor film can realize rapid heating, rapidly improve the temperature and realize high-efficiency heating; in addition, the insulating substrate layer with the similar thermal expansion coefficient is combined with the titanium diboride semiconductor film layer, so that the insulating substrate layer and the titanium diboride semiconductor film layer are prevented from cracking due to the fact that the thermal expansion coefficients are not consistent, and the insulating substrate layer and the titanium diboride semiconductor film layer have good reliability and durability.
In addition, the thickness of the insulating base body layer is 0.5-3 mm, the base body layer is designed to be thin, the thermal shock resistance of the whole heating device can be guaranteed to be excellent, and the whole heating device can bear rapid heating from room temperature to 900 ℃ in a short time or rapid cooling in the reverse process, so that the safety and the reliability of the heating device are guaranteed.
The preparation method of the heating device comprises the following steps:
a. preparing the insulating matrix layer and preparing a titanium diboride target;
b. sputtering the prepared titanium diboride target on the surface of the substrate of the insulating substrate layer by adopting a sputtering process to form a titanium diboride semiconductor film layer;
c. making an electrode, and connecting the electrode with the titanium diboride semiconductor film layer;
d. and sputtering a layer of anti-oxidation and insulation protective film on the surfaces of the formed titanium diboride semiconductor film and the electrode by a sputtering process to finally obtain the heating device.
The concrete steps of the step b are as follows:
b1. preparing the amount of a titanium diboride target according to the thickness and area requirements of the titanium diboride semiconductor film layer formed by sputtering, and setting the sputtering parameters of a direct-current ion sputtering instrument;
b2. putting the insulating substrate layer into a sputtering bin of an ion sputtering instrument, covering a bin cover and starting to vacuumize;
b3. when the vacuum degree in the sputtering chamber reaches a set value, introducing inert gas, detecting the pressure of the sputtering chamber, and when the pressure reaches the set value, stopping introducing the inert gas and switching on a sputtering power supply;
b4. adding negative high voltage on the titanium diboride target, forming a negative high voltage electric field area between the titanium diboride target and the anode of the ion sputtering instrument, ionizing residual air or injected inert gas existing in a sputtering bin, and attracting and impacting the titanium diboride target by a cathode to generate a glow phenomenon, wherein at the moment, atoms or atom groups are released from the titanium diboride target;
b5. atoms or atomic groups released by the titanium diboride target material collide with residual gas and ions existing in a sputtering bin, the atoms or atomic groups of the titanium diboride target material are dispersed around to form fog, and then fall and deposit on the surface of the insulating substrate layer to form a uniform and fine titanium diboride semiconductor film layer.
And d, sputtering the insulation base body layer by a direct-current ion sputtering instrument to form the anti-oxidation and insulation protection film layer.
The scheme shows that the preparation method of the heating device is simple in process, the sputtering process is adopted, the preparation quality of the product can be guaranteed, the large-scale production can be realized, and the production efficiency and the productivity are higher.
The high-temperature heating equipment comprising the heating device further comprises a main body, wherein a heating plate used for supporting the appliance to be heated is arranged on the surface of the main body, the heating device is attached to the lower surface of the heating plate, and the heating device is connected with a power supply.
The insulating substrate layer of the heating device is disc-shaped, and the titanium diboride semiconductor film layer sputtered on the surface of the insulating substrate layer is in a plurality of annular distribution shapes.
The electric ceramic furnace adopts the heating device to heat, can realize the sharp heating from room temperature to 900 ℃ or the sharp cooling in the reverse process, ensures the electric ceramic furnace to be heated quickly, utilizes the substrate layer with similar thermal expansion coefficient and the titanium diboride semiconductor film layer as the materials of the heating device, ensures that the heating device is not easy to crack, improves the safety, and the titanium diboride semiconductor film layer has the semiconductor characteristic and has better energy-saving effect.
Drawings
FIG. 1 is a simplified sectional structural view of a heat generating device according to the present invention;
FIG. 2 is a schematic view of a simplified structure of the high-temperature heating apparatus;
fig. 3 is a simplified plan view of the heat generating device provided in the high-temperature heating apparatus.
Detailed Description
As shown in fig. 1, the heating device of the present invention includes an insulating substrate layer 1, a titanium diboride semiconductor film layer 2 is sputtered on one surface of the insulating substrate layer 1, and an oxidation-resistant and insulating protective film layer 3 is sputtered outside the titanium diboride semiconductor film layer 2. Specifically, the insulating matrix layer 1 is an alumina ceramic matrix layer. The oxidation-resistant and insulating protective film layer 3 is an alumina film layer. The thickness range of the titanium diboride semiconductor film layer 2 is 0.1-10 mu m, and the thickness range can be set according to actual needs. The thickness of the insulating matrix layer 1 is 0.5-3 mm.
Here, the thermal expansion coefficient of alumina is 7.85X 10-6m/m.k, and the coefficient of thermal expansion of titanium diboride is 8.1X 10-6m/m.k, the thermal expansion coefficients of the two are very similar. When the two materials are combined as the materials of the heating device, the two materials can be ensured to have very similar expansion degrees during thermal expansion, and further the heating device can not crack in the using process.
The preparation method of the heating device comprises the following steps:
a. and preparing the insulating matrix layer 1 and preparing a titanium diboride target material.
b. And sputtering the prepared titanium diboride target on the surface of the substrate of the insulating substrate layer 1 by adopting a sputtering process to form a titanium diboride semiconductor film layer 2.
c. Manufacturing an electrode, and connecting the electrode with the titanium diboride semiconductor film layer 2; here, the electrode is made of silver material, and the silver electrode can be made by printing and firing, or by sputtering, which is also done by using a dc ion sputtering apparatus.
d. And sputtering a layer of anti-oxidation and insulation protective film layer 4 on the surfaces of the formed titanium diboride semiconductor film layer 2 and the electrode by a sputtering process to finally obtain the heating device.
Further, the specific steps of the step b are as follows:
b1. and preparing the amount of the titanium diboride target according to the thickness and area requirements of the titanium diboride semiconductor film layer 2 formed by sputtering. Wherein the thickness of the titanium diboride semiconductor film layer 2 is set according to the requirements of the heat generating device (as will be exemplified later). The film thickness of the sputtered layer depends mainly on the length of the sputtering time and the magnitude of the sputtering current. The titanium diboride sputtering particles are controlled to be 30-50 nm (the observation through an emission scanning electron microscope is more intuitive). Sputtering parameters of the direct current ion sputtering instrument are set, wherein the sputtering parameters comprise the vacuum degree of a sputtering bin, the sputtering current of the sputtering instrument, the sputtering time and the like.
b2. And putting the insulating substrate layer 1 into a sputtering bin of an ion sputtering instrument, covering a bin cover and starting vacuumizing, wherein the vacuumizing rate is less than 3L/s.
b3. And when the vacuum degree in the sputtering chamber reaches a set value, introducing inert gas, detecting the pressure of the sputtering chamber, and when the pressure reaches the set value, stopping introducing the inert gas and switching on a sputtering power supply. Here, a certain amount of residual air is allowed to exist at the time of vacuum pumping, and its ultimate vacuum may reach 0.1 Pa. After the inert gas is injected, the set pressure value is about 5Pa, but the working vacuum degree in the sputtering bin needs to be ensured to be less than or equal to 30 Pa. In addition, the sputtering power supply is a 220-240V alternating current source, the frequency is 50Hz, the sputtering direct current voltage after conversion is 3000V, the power is 500W, the sputtering current is less than or equal to 30mA, and the sputtering time is less than or equal to 600 s.
b4. Negative high voltage is added on the titanium diboride target material, a negative high voltage electric field area is formed between the titanium diboride target material and the anode of the ion sputtering instrument, residual air or injected inert gas existing in a sputtering bin is ionized, positive ions with positive electricity are attracted by a cathode to impact the titanium diboride target material, a glow phenomenon is generated, and at the moment, atoms or atom groups are released by the titanium diboride target material.
b5. Atoms or atomic groups released by the titanium diboride target material collide with residual gas and ions existing in a sputtering bin, the atoms or atomic groups of the titanium diboride target material are dispersed all around to form fog, and then fall and deposit on the surface of the insulating substrate layer 1 to form a uniform and fine titanium diboride semiconductor film layer 2.
And in the step d, the oxidation-resistant and insulating protective film layer 4 is formed on the insulating base body layer 1 through sputtering of a direct-current ion sputtering instrument. That is, the oxidation-resistant and insulating protective film layer 4 can also complete the sputtering process by a direct current ion sputtering instrument, only related sputtering technical parameters need to be set, the steps are basically consistent with the sputtering process of forming the titanium diboride semiconductor film layer by sputtering the titanium diboride target on the surface of the substrate of the insulating substrate layer, and the sputtering parameters are adjusted according to specific requirements. And will not be described in detail herein.
When the heating device is used for preparing high-temperature heating equipment, the electric ceramic furnace further comprises a main body 4, a heating plate 5 used for supporting an appliance to be heated is arranged on the surface of the main body 4, the heating device is attached to the lower surface of the heating plate 5, and the heating device is connected with a power supply. The insulating base body layer 1 of the heating device is disc-shaped, and the titanium diboride semiconductor film layer 2 sputtered on the surface of the insulating base body layer 1 is in a plurality of annular distribution shapes.
When the preparation method is concretely carried out, titanium diboride is sputtered on an alumina substrate ceramic wafer with the thickness of 1mm and the diameter of 220mm through a sputtering process to form a titanium diboride semiconductor film layer, and an alumina film is sputtered outside to be used as an anti-oxidation and insulation protection film layer. When designing the titanium diboride semiconductor film layer, the width of the annular titanium diboride semiconductor film layer is designed to be 10mm, the distance between the rings is designed to be 20mm from the time when the diameter of the alumina base ceramic wafer is 50mm to the time when the diameter is 220mm, and the length of the titanium diboride semiconductor film layer is calculated to reach 2.4 m. The rings formed by the titanium diboride semiconductor film layers are non-closed rings, are connected end to form a serial connection mode, and are finally connected with a peripheral power supply through electrodes. Of course, several annular titanium diboride semiconductor film layers can be divided into a plurality of regions according to design requirements and then connected in parallel or in series.
When the thickness of the titanium diboride semiconductor film layer is specifically designed, the following steps are set: power is P, voltage is V, current is I, resistance is R, resistivity is rho, cross section area of the titanium diboride semiconductor film layer is S, length of the titanium diboride semiconductor film layer is L, thickness of the titanium diboride semiconductor film layer is T, width of the titanium diboride semiconductor film layer is W, and the titanium diboride semiconductor film layer is provided with
S = W × T, known: p =2500W, V =220V, L =240cm, W =1cm,
ρ=14.4μΩ.cm=14.4×10-6Ω.cm,
P=I×V=V2/R，R=V2/P=2202/2500=19.36Ω,
R=ρ×L/S,
S=ρ×L/R=14.4×10-6×240/19.36=1.79×10-4cm2，
T=S/W=1.79×10-4/1=1.79×10-4cm=1.79µm,
and finally obtaining the titanium diboride semiconductor film layer with the thickness of 1.79 mu m.
Of course, the present invention can also design the voltage as 110V, which can be designed into different voltage values according to the use condition of the present invention in different regions or countries. In order to meet the 110V voltage input, the thickness of the titanium diboride semiconductor film layer can be doubled, or the length of the titanium diboride semiconductor film layer is designed to be composed of two annular titanium diboride semiconductor film layers with the length being half of the existing length, and the two annular titanium diboride semiconductor film layers are connected in parallel, so that the resistance value of the resistor is reduced to half.
The high-temperature heating equipment can be an electric ceramic furnace. In addition, the heating device can also be used for manufacturing PTC heating ceramic sheets or flexible PTC heating sheets, and can also be applied to household bathroom appliances such as kitchen heating appliances.
The method has the advantages of simple structure, safety, reliability, low energy consumption, high heating efficiency, light weight, high temperature resistance, oxidation resistance and better economic prospect.
Claims (10)
1. A heat generating device, characterized by: the titanium diboride-based high-voltage power supply comprises an insulating base body layer (1), wherein a titanium diboride semiconductor film layer (2) is sputtered on one surface of the insulating base body layer (1), and an anti-oxidation and insulating protective film layer (3) is sputtered outside the titanium diboride semiconductor film layer (2).
2. A heat-generating device as claimed in claim 1, wherein: the insulating matrix layer (1) is an alumina ceramic matrix layer.
3. A heat-generating device as claimed in claim 1, wherein: the oxidation-resistant and insulating protective film layer (3) is an aluminum oxide film layer.
4. A heat-generating device as claimed in claim 1, wherein: the thickness range of the titanium diboride semiconductor film layer (2) is 0.1-10 mu m.
5. A heat-generating device as claimed in claim 2, wherein: the thickness of the insulating matrix layer (1) is 0.5-3 mm.
6. A method of making a heat-generating device as recited in claim 1, comprising the steps of:
a. preparing the insulating matrix layer (1) and preparing a titanium diboride target material;
b. sputtering the prepared titanium diboride target material onto the surface of the substrate of the insulating substrate layer (1) by adopting a sputtering process to form a titanium diboride semiconductor film layer (2);
c. manufacturing an electrode, and connecting the electrode with the titanium diboride semiconductor film layer (2);
d. and sputtering a layer of oxidation-resistant and insulating protective film layer (4) on the surfaces of the formed titanium diboride semiconductor film layer (2) and the electrode by a sputtering process to finally obtain the heating device.
7. The method for manufacturing a heat-generating device according to claim 6, wherein the specific steps of step b are as follows:
b1. preparing the amount of a titanium diboride target according to the thickness and area requirements of the titanium diboride semiconductor film layer (2) formed by sputtering, and setting the sputtering parameters of a direct-current ion sputtering instrument;
b2. putting the insulating substrate layer (1) into a sputtering bin of an ion sputtering instrument, covering a bin cover and starting to vacuumize;
b3. when the vacuum degree in the sputtering chamber reaches a set value, introducing inert gas, detecting the pressure of the sputtering chamber, and when the pressure reaches the set value, stopping introducing the inert gas and switching on a sputtering power supply;
b4. adding negative high voltage on the titanium diboride target, forming a negative high voltage electric field area between the titanium diboride target and the anode of the ion sputtering instrument, ionizing residual air or injected inert gas existing in a sputtering bin, and attracting and impacting the titanium diboride target by a cathode to generate a glow phenomenon, wherein at the moment, atoms or atom groups are released from the titanium diboride target;
b5. atoms or atomic groups released by the titanium diboride target material collide with residual gas and ions existing in a sputtering bin, the atoms or atomic groups of the titanium diboride target material are dispersed around to form fog, and then fall and deposit on the surface of the insulating matrix layer (1) to form a uniform and fine titanium diboride semiconductor film layer (2).
8. The method for producing a heat-generating device according to claim 6, wherein in the step d, the oxidation-resistant and insulating protective film layer (4) is formed on the insulating base layer (1) by sputtering with a direct current ion sputtering apparatus.
9. A high-temperature heating apparatus comprising the heat generating device according to claim 1, further comprising a main body (4), a heating plate (5) for supporting an appliance to be heated being provided on a surface of the main body (4), characterized in that: the heating device is attached to the lower surface of the heating plate (5) and is connected with a power supply.
10. The high-temperature heating apparatus according to claim 9, wherein: the insulating base body layer (1) of the heating device is disc-shaped, and the titanium diboride semiconductor film layer (2) sputtered on the surface of the insulating base body layer (1) is in a plurality of annular distribution shapes.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1136157A (en) * | 1995-03-08 | 1996-11-20 | 松下电器产业株式会社 | Film-like heating device, heat insulating seat pad, evaporizer and heating furnace |
| US20010003336A1 (en) * | 1997-05-06 | 2001-06-14 | Richard C. Abbott | Deposited resistive coatings |
| CN101101855A (en) * | 2006-07-05 | 2008-01-09 | 通用电气公司 | Electrode pattern for resistance heating element and wafer processing apparatus |
| CN109315021A (en) * | 2016-06-17 | 2019-02-05 | 东华隆株式会社 | Heat generating components |
| US20200163164A1 (en) * | 2017-08-04 | 2020-05-21 | Nitto Denko Corporation | Heater member, heater tape, and molded body equipped with heater member |
| CN214032671U (en) * | 2020-11-24 | 2021-08-24 | 珠海尔康智能厨卫科技有限公司 | Heating device and high-temperature heating equipment |
-
2020
- 2020-11-24 CN CN202011333021.7A patent/CN112251717A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1136157A (en) * | 1995-03-08 | 1996-11-20 | 松下电器产业株式会社 | Film-like heating device, heat insulating seat pad, evaporizer and heating furnace |
| US20010003336A1 (en) * | 1997-05-06 | 2001-06-14 | Richard C. Abbott | Deposited resistive coatings |
| CN101101855A (en) * | 2006-07-05 | 2008-01-09 | 通用电气公司 | Electrode pattern for resistance heating element and wafer processing apparatus |
| CN109315021A (en) * | 2016-06-17 | 2019-02-05 | 东华隆株式会社 | Heat generating components |
| US20200163164A1 (en) * | 2017-08-04 | 2020-05-21 | Nitto Denko Corporation | Heater member, heater tape, and molded body equipped with heater member |
| CN214032671U (en) * | 2020-11-24 | 2021-08-24 | 珠海尔康智能厨卫科技有限公司 | Heating device and high-temperature heating equipment |
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Effective date of registration: 20210622 Address after: 519000 Room 502, 5th floor, front block, building D, Fuxi Industrial Zone, Xiangzhou District, Zhuhai City, Guangdong Province Applicant after: ZHUHAI ERKANG INTELLIGENT KITCHEN AND BATH TECHNOLOGY Co.,Ltd. Address before: 518000 room 1701, building C2, Nanshan wisdom garden, 1001 Xueyuan Avenue, Changyuan community, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Applicant before: Shenzhen Huachen High Tech Co.,Ltd. |