CN112216805A - Photomask structure, method for forming cathode film layer and cathode film layer on array substrate - Google Patents
Photomask structure, method for forming cathode film layer and cathode film layer on array substrate Download PDFInfo
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- CN112216805A CN112216805A CN201910631244.2A CN201910631244A CN112216805A CN 112216805 A CN112216805 A CN 112216805A CN 201910631244 A CN201910631244 A CN 201910631244A CN 112216805 A CN112216805 A CN 112216805A
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H10K50/805—Electrodes
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
Abstract
The invention relates to a photomask structure, a method for forming a cathode film layer and the cathode film layer on an array substrate. The mask structure includes: the first photomask body is provided with a plurality of first openings which are arranged corresponding to the openings of the pixel definition layers at intervals, a plurality of third openings which protrude outwards are further arranged at intervals on the side edge of each first opening, and when the first openings are arranged corresponding to the openings of the pixel definition layers at multiple columns, the third openings are positioned between the openings of the pixel definition layers at two adjacent columns; and the second photomask body is provided with a plurality of second openings which are arranged corresponding to the openings of the pixel definition layers in the rows at intervals, and the second openings and the first openings correspond to the openings of the pixel definition layers in different rows. According to the invention, the cathode film layer is patterned to cover the opening area of the Pixel Definition Layer (PDL), and the opening area of part of the non-Pixel Definition Layer (PDL) is exposed, so that the integral transmittance of the panel (panel) is improved, and transparent display is facilitated.
Description
Technical Field
The present disclosure relates to cathode films, and particularly to a mask structure, a method for forming a cathode film, and a cathode film on an array substrate.
Background
The future development prospect of the transparent display technology is very optimistic. The novel interactive entertainment system breaks through the conventional system, increases the interestingness of the product, brings unprecedented convenience and visual impact to people, and develops a new development direction in some creative design, display and interaction fields. In addition, the transparent display screen can meet the backlight requirement by using common ambient light, so that the energy consumption is greatly reduced, and the concept of low-carbon environmental protection and green energy conservation is fully embodied.
In the process of implementing the invention, the inventor finds that the prior art has at least the following problems:
1. referring to fig. 9, a Cathode (Cathode) film 8 inside the transparent display panel of the prior art has a low transmittance and covers a View Area (AA) 7, so that light emitted from an organic light emitting diode inside the transparent display panel is difficult to penetrate through the Cathode film;
2. the cathode film layer 8 covers the entire viewing area 7, which makes it difficult for ambient light to penetrate through the entire film layer of the panel (panel) and to see the scene behind the screen, thereby reducing the transmittance of the transparent display screen.
Disclosure of Invention
In order to solve the above problems in the prior art, embodiments of the present invention provide a mask structure, a method for forming a cathode film layer, and a cathode film layer on an array substrate. The specific technical scheme is as follows:
in a first aspect, a mask structure is provided for evaporating a cathode film layer on an array substrate, wherein a plurality of rows of pixel definition layer openings are disposed on the array substrate, and the mask structure includes:
the first photomask body is provided with a plurality of first openings which are arranged corresponding to the openings of the pixel definition layers at intervals, a plurality of third openings which protrude outwards are further arranged at intervals on the side edge of each first opening, and when the first openings are arranged corresponding to the openings of the pixel definition layers at multiple columns, the third openings are positioned between the openings of the pixel definition layers at two adjacent columns; and
the second photomask body is provided with a plurality of second openings which are arranged corresponding to the openings of the pixel definition layers in the rows at intervals and correspond to the openings of the pixel definition layers in the different rows with the first openings, a plurality of fourth openings which protrude outwards are further arranged at intervals on the side edge of each second opening, and when the second openings are arranged corresponding to the openings of the pixel definition layers in the rows, the fourth openings are positioned between the openings of the pixel definition layers in the two adjacent rows and are overlapped with the third openings.
In a first possible implementation manner of the first aspect, the shapes of the first mask body and the second mask body correspond to the shape of the array substrate.
In a second possible implementation manner of the first aspect, the plurality of first openings, the plurality of second openings, the plurality of third openings, and the plurality of fourth openings are rectangular openings.
In a third possible implementation manner of the first aspect, each third opening corresponds to a position between two adjacent pixel definition layer openings in the column of pixel definition layer openings corresponding to each first opening; each fourth opening corresponds to a position between two adjacent pixel definition layer openings in the pixel definition layer openings of the column corresponding to each second opening.
In a second aspect, a method for forming a cathode film layer on an array substrate is provided, wherein the method for forming the cathode film layer includes the following steps:
forming a first cathode film layer on the array substrate, and covering the first cathode film layer on the openings of the spaced row pixel definition layer on the array substrate; and
forming a second cathode film layer on the array substrate, covering the second cathode film layer on the openings of the pixel definition layers in the spaced rows on the array substrate, covering the openings of the pixel definition layers in different rows with the first cathode film layer, and forming a spaced overlapping part between the openings of the pixel definition layers in two adjacent rows.
In a first possible implementation manner of the second aspect, the method for forming the first cathode film layer further includes the following steps:
shielding the first photomask body on the array substrate, so that the plurality of first openings correspond to the plurality of rows of pixel definition layer openings at intervals, and the plurality of third openings are positioned between the adjacent two rows of pixel definition layer openings; and
and performing first evaporation, namely evaporating a first cathode film layer on the array substrate.
With reference to the first possible implementation manner of the second aspect, in a second possible implementation manner of the second aspect, the method for forming the second cathode film layer further includes the following steps:
shielding the second photomask body on the array substrate, enabling the plurality of second openings to correspond to the plurality of rows of pixel definition layer openings at intervals, enabling the plurality of second openings to correspond to the plurality of first openings to correspond to the plurality of rows of pixel definition layer openings, enabling the plurality of fourth openings to be located between the adjacent two rows of pixel definition layer openings and overlapping the positions of the fourth openings with the positions of the third openings; and
and a second evaporation plating, namely evaporating a second cathode film layer on the array substrate.
In a third aspect, a cathode layer on an array substrate is provided, where the cathode layer is formed on the array substrate, and the cathode layer on the array substrate includes:
the single-layer cathode film layer region comprises a first cathode film layer and a second cathode film layer, and the first cathode film layer and the second cathode film layer are arranged on the array substrate and cover the openings of the pixel definition layers in different rows;
the double-layer cathode film layer region is a plurality of overlapping parts of the first cathode film layer and the second cathode film layer, and the overlapping parts are arranged between the openings of the adjacent rows of pixel defining layers at intervals; and
the non-cathode film layer region is a plurality of uncovered parts of the first cathode film layer and the second cathode film layer, and the plurality of uncovered parts are arranged between the openings of the adjacent rows of pixel defining layers at intervals and are arranged corresponding to the plurality of overlapped parts at intervals.
In a first possible implementation manner of the third aspect, each overlapping portion is correspondingly disposed between two adjacent pixel definition layer openings in each column of pixel definition layer openings, and each uncovered portion is correspondingly disposed on a side of a pixel definition layer opening in each column of pixel definition layer openings.
In a second possible implementation manner of the third aspect, the first cathode film layer is a rectangular structure with a plurality of first protrusions on a plurality of sides, the plurality of first rectangular structures cover the openings of the plurality of rows of pixel definition layers at intervals, the first protrusions are located between the openings of the pixel definition layers in adjacent rows, the second cathode film layer is a rectangular structure with a plurality of second protrusions on a plurality of sides, the plurality of second rectangular structures cover the openings of the plurality of rows of pixel definition layers at intervals, and the second protrusions are located between the openings of the pixel definition layers in adjacent rows and overlap with the first protrusions.
Compared with the prior art, the invention has the advantages that:
1. according to the invention, two sets of specially designed photomask bodies (the first photomask body and the second photomask body) are designed and used, the cathode film layer is patterned to cover the opening area of the Pixel Definition Layer (PDL), and the opening area of part of the non-Pixel Definition Layer (PDL) is exposed, so that the integral transmittance of the panel (panel) is improved, and the transparent display is favorably realized.
2. The double-layer cathode film region serves as a bridge and is transversely connected with the single-layer cathode film region, so that the reduction of the IR voltage Drop (IR-Drop) of a variable cross-section scanning (Var Sect Sweep, VSS) signal is facilitated.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a mask structure according to one embodiment of the present invention.
Fig. 2 is a schematic structural diagram of an array substrate according to one, two, or three embodiments of the invention.
Fig. 3 is a schematic structural view of the first mask body covering the array substrate according to the first and second embodiments of the present invention.
Fig. 4 is a schematic structural view of a second mask body covering the array substrate according to the first and second embodiments of the invention.
Fig. 5 is a schematic structural diagram of a cathode film layer on an array substrate according to three embodiments of the present invention.
Fig. 6 is a flow chart illustrating steps of a method for forming a cathode film according to two embodiments of the present invention.
Fig. 7 is a flowchart illustrating a method for forming a first cathode film layer according to a second embodiment of the present invention.
Fig. 8 is a flowchart illustrating a second method for forming a cathode film according to a second embodiment of the present invention.
Fig. 9 is a schematic structural view of a prior art cathode film layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
In an embodiment of the invention, please refer to fig. 1, which shows a schematic structural diagram of a mask structure 1 according to an embodiment of the invention. The mask structure 1 is used for evaporating a cathode layer 3 on an array substrate 2, please refer to fig. 2, which shows a schematic structural diagram of the array substrate 2 according to the present embodiment. Be provided with multiseriate pixel definition layer opening 21 on the array substrate 2, light cover structure 1 includes first light cover body 11 and second light cover body 12, wherein:
referring to fig. 1 again, the first mask body 11 has a plurality of first openings 111, and the first openings 111 disclosed in the present embodiment are all rectangular holes, and the rectangular holes are disposed side by side on the first mask body 11, but not limited thereto.
Fig. 3 is a schematic structural diagram showing the first mask body 11 of the present embodiment covering the array substrate 2. The plurality of first openings 111 are disposed in a spaced manner corresponding to the plurality of columns of pixel definition layer openings 21, where the spaced manner may be that the plurality of first openings 111 correspond to odd columns of the plurality of columns of pixel definition layer openings 21, for example, a first opening 111 corresponds to a first column of pixel definition layer openings 21, a second first opening 111 corresponds to a third column of pixel definition layer openings 21, a third first opening 111 corresponds to a fifth column of pixel definition layer openings 21, and so on, but not limited thereto.
The side of each first opening 111 is further provided with a plurality of third openings 112 protruding outward at intervals, and the third openings 112 disclosed in this embodiment are all rectangular openings, but not limited thereto. Referring to fig. 3 again, when the first openings 111 are disposed corresponding to the pixel definition layer openings 21 in the rows, the third openings 112 are disposed between two adjacent pixel definition layer openings 21 in the rows.
When the first mask body 11 is used for first evaporating the cathode layer 3 on the array substrate 2, the cathode material forms the first cathode layer 31 on the odd-numbered rows of the pixel defining layer openings 21 through the first openings 111, and forms a plurality of first bridges 311 (the bridges are also the first cathode layer 31) on the side of the first cathode layer 31 through the third openings 112 for connecting with the cathode layer 3 (the second cathode layer 32) formed on the even-numbered rows of the pixel defining layer openings 21.
The second mask body 12 has a plurality of second openings 121, and the second openings 121 disclosed in this embodiment are all rectangular holes, and the rectangular holes are disposed in parallel on the second mask body 12, but not limited thereto.
Fig. 4 is a schematic structural diagram showing the second mask body 12 of the present embodiment covering the array substrate 2. The plurality of second openings 121 are disposed in interval correspondence with the plurality of columns of pixel defining layer openings 21, and correspond to the plurality of first openings 111 in different columns of pixel defining layer openings 21, where the interval correspondence may be that the plurality of first openings 111 correspond to even columns of the plurality of columns of pixel defining layer openings 21, for example, a first second opening 121 corresponds to a second column of pixel defining layer openings 21, a second opening 121 corresponds to a fourth column of pixel defining layer openings 21, a third second opening 121 corresponds to a sixth column of pixel defining layer openings 21, and so on, but not limited thereto.
The side of each second opening hole 121 is further provided with a plurality of fourth opening holes 122 protruding outward at intervals, and the plurality of second opening holes 121 disclosed in this embodiment are all rectangular holes, but not limited thereto. Referring to fig. 4 again, when the second openings 121 are disposed corresponding to the pixel definition layer openings 21 in the rows, the fourth openings 122 are disposed between two adjacent pixel definition layer openings 21 in the rows and overlap with the third openings 112.
When the second mask body 12 is used for second deposition of the cathode layer 3 on the array substrate 2, the cathode material forms a second cathode layer 32 on the even-numbered pixel definition layer openings 21 through the second openings 121, and forms a plurality of second bridges 321 (also the second cathode layer 32) on the side of the second cathode layer 32 through the fourth openings 122, the first bridges 311 overlap with the second bridges 321 to form a double-layer cathode layer, and the double-layer cathode layer is used as a bridge and is transversely connected to the single-layer cathode layer (the first cathode layer 31 and the second cathode layer 32) to reduce IR Drop (IR-Drop) of variable cross-section scanning (Var Sect Sweep, VSS) signals.
In a preferred embodiment, referring to fig. 3 and 4 again, each third opening 112 corresponds to a position between two adjacent pixel definition layer openings 21 in the row of pixel definition layer openings 21 corresponding to each first opening 111, that is, the third opening 112 and the pixel definition layer openings 21 are located in different rows, and each fourth opening 122 corresponds to a position between two adjacent pixel definition layer openings 21 in the row of pixel definition layer openings 21 corresponding to each second opening 121, that is, the third opening 112 and the pixel definition layer openings 21 are located in different rows, but not limited thereto.
In a preferred embodiment, the shapes of the first mask body 11 and the second mask body 12 correspond to the shape of the array substrate 2, and the lengths and widths of the first mask body 11 and the second mask body 12 are preferably equal to or larger than the lengths and widths of the array substrate 2, but not limited thereto.
In another embodiment of the present invention, please refer to fig. 6, which shows a flow chart of the steps of the method 4 for forming the cathode film 3 according to the second embodiment of the present invention. The method 4 for forming the cathode film layer 3 is for forming the cathode film layer 3 on the array substrate 2, and the method 4 for forming the cathode film layer 3 includes the following steps 41-42, wherein:
In a preferred embodiment, please refer to fig. 7, which shows a flowchart of steps of a method 5 for forming a first cathode film 31 according to two embodiments of the present invention. The method 5 for forming the first cathode film 31 further includes the following steps 501-502, wherein:
in step 501, the first mask body 11 is covered on the array substrate 2, such that the plurality of first openings 111 correspond to the plurality of rows of pixel definition layer openings 21 at intervals, and the plurality of third openings 112 are located between two adjacent rows of pixel definition layer openings 21.
Specifically, referring to fig. 3, the first mask body 11 is covered on the array substrate 2, such that the first openings 111 are spaced from the odd-numbered rows of the pixel definition layer openings 21, and the third openings 112 are located between two adjacent rows of the pixel definition layer openings 21.
Step 502, performing a first evaporation, namely, evaporating the first cathode film layer 31 on the array substrate 2.
Specifically, the first mask body 11, the array substrate 2 and the cathode material are placed in an evaporation chamber for evaporation, so that the cathode material forms a first cathode film layer 31 on the odd-numbered rows of pixel defining layer openings 21 through the first openings 111, and at the same time, the cathode material forms a plurality of first bridges 311 (the bridges are also the first cathode film layer 31) on the side of the first cathode film layer 31 through the third openings 112. Moreover, since the shielding region is located between two adjacent third openings 112, the cathode material is not evaporated on the shielding region, so that the opening region of a part of non-Pixel Definition Layer (PDL) is exposed, and the overall transmittance of the panel (panel) is improved.
In a preferred embodiment, please refer to fig. 8, which shows a flowchart of steps of a method 6 for forming a second cathode film 32 according to two embodiments of the present invention. Method 6 of forming second cathodic film layer 32 further includes steps 61-62 wherein:
in step 61, referring to fig. 4, the second mask body 12 is covered on the array substrate 2, such that the plurality of second openings 121 correspond to the plurality of rows of pixel definition layer openings 21 at intervals, the plurality of first openings 111 correspond to different rows of pixel definition layer openings 21, and the plurality of fourth openings 122 are located between two adjacent rows of pixel definition layer openings 21 and overlap with the third openings 112.
Specifically, the second mask body 12 is covered on the array substrate 2, so that the plurality of second openings 121 correspond to the even-numbered rows of pixel definition layer openings 21 at intervals, and the plurality of fourth openings 122 are located between the adjacent two rows of pixel definition layer openings 21 and overlap with the third openings 112 (the first bridges 311).
And 62, evaporating the second cathode film layer 32 on the array substrate 2 by the second evaporation.
Specifically, the second mask body 12, the array substrate 2 and the cathode material are placed in an evaporation chamber for evaporation, so that the cathode material passes through the second openings 121 to form the second cathode film layer 32 on the even-numbered rows of the pixel defining layer openings 21.
Meanwhile, the cathode material also forms a plurality of second bridges 321 (which are also the second cathode film layer 32) on the side of the second cathode film layer 32 through the plurality of fourth openings 122, the first bridge 311 overlaps the second bridge 321 to form a double-layer cathode film layer 34, and the double-layer cathode film layer is used as a bridge and is transversely connected with the single-layer cathode film layer (the first cathode film layer 31 and the second cathode film layer 32), which is beneficial to reducing a variable cross-section scanning (Var Sect Sweep, VSS) signal IR Drop (IR-Drop). Moreover, because the space between the adjacent fourth holes 122 is also a shielding region, the cathode material is not evaporated on the fourth holes, so that the opening region of a part of non-Pixel Definition Layer (PDL) is exposed, and the integral transmittance of the panel (panel) is improved.
In the method 4 for forming the cathode film layer 3 of this embodiment, when the cathode film layer 3 is formed on the array substrate 2, the non-cathode film layer regions 35 (between the two adjacent third openings 112 and fourth openings 122) are formed on the array substrate 2, so that the overall transmittance of the panel (panel) can be improved, and transparent display can be realized; a single-layer cathode film layer region 33 (the region covered by the first cathode film layer 31 and the second cathode film layer 32) as a device cathode electrode; the double-layer cathode film region 34 (the region where the first bridge 311 overlaps the second bridge 321) is advantageous in reducing a variable cross-section scanning (Var search Sweep, VSS) signal IR Drop (IR-Drop).
In three embodiments of the present invention, please refer to fig. 5, which shows a schematic structural diagram of the cathode film layer 3 on the array substrate 2 according to the three embodiments of the present invention. The cathode film layer 3 includes a single-layer cathode film layer region 33, a double-layer cathode film layer region 34, and a non-cathode film layer region 35, wherein:
the single-layer cathode film layer 33 serves as a cathode electrode of the device, the single-layer cathode film layer 33 includes a first cathode film layer 31 and a second cathode film layer 32, the first cathode film layer 31 and the second cathode film layer 32 are disposed on the array substrate 2 and cover the openings 21 of the pixel defining layers in different rows, the first cathode film layer 31 covers the openings 21 of the pixel defining layers in odd rows, and the second cathode film layer 32 covers the openings 21 of the pixel defining layers in even rows, but not limited thereto.
In a preferred embodiment, the first cathode film layer 31 is a plurality of rectangular structures having a plurality of first protrusions on the sides, the first protrusions are the first bridges 311 shown in the above two embodiments, and the plurality of first rectangular structures are alternately covered on the plurality of rows of pixel defining layer openings 21, preferably covered on the odd rows of pixel defining layer openings 21, but not limited thereto. The first protrusion is located between the adjacent columns of pixel defining layer openings 21.
The second cathode film layer 32 is a plurality of rectangular structures having a plurality of second protrusions on the side edges, the second protrusions are the second bridges 321 shown in the above two embodiments, and the plurality of second rectangular structures are alternately covered on the plurality of rows of pixel defining layer openings 21, preferably covered on the even rows of pixel defining layer openings 21, but not limited thereto. The second protrusion is located between the openings 21 of the pixel definition layers in adjacent columns and overlaps the first protrusion.
The double layer cathode film layer region 34 is connected laterally to the single layer cathode film layer region as a bridge, reducing the variable section scan (Var search Sweep, VSS) signal IR Drop (IR-Drop). The double-layer cathode film layer 34 is a plurality of overlapping portions of the first cathode film layer 31 and the second cathode film layer 32, the overlapping portions are overlapping portions of the first protrusion (the first bridge 311) and the second protrusion (the second bridge 321), and the overlapping portions are disposed between the adjacent rows of the pixel defining layer openings 21 at intervals.
In a preferred embodiment, each overlapping portion is correspondingly disposed between two adjacent pixel definition layer openings 21 in each row of pixel definition layer openings 21, and each uncovered portion is correspondingly disposed on a side of a pixel definition layer opening 21 in each row of pixel definition layer openings 21, but not limited thereto.
The non-cathode film region 35 is used to increase the overall panel (panel) transmittance, facilitating transparent display. The non-cathode film layer region 35 is a plurality of uncovered portions of the first cathode film layer 31 and the second cathode film layer 32, and the plurality of uncovered portions are disposed between the openings 21 of the pixel defining layers in adjacent rows at intervals, and are disposed at intervals corresponding to the plurality of overlapped portions, that is, between two adjacent overlapped portions.
The foregoing description shows and describes several preferred embodiments of the invention, but as aforementioned, it is to be understood that the invention is not limited to the forms disclosed herein, but is not to be construed as excluding other embodiments and is capable of use in various other combinations, modifications, and environments and is capable of changes within the scope of the inventive concept as expressed herein, commensurate with the above teachings, or the skill or knowledge of the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. The utility model provides a light shield structure for evaporate the cathode film layer on array substrate, be provided with multiseriate pixel definition layer opening on the array substrate, its characterized in that, light shield structure includes:
the first photomask body is provided with a plurality of first openings which are arranged corresponding to the openings of the pixel definition layers at intervals, a plurality of third openings which protrude outwards are further arranged at intervals on the side edge of each first opening, and when the first openings and the openings of the pixel definition layers at the rows are arranged corresponding to each other, the third openings are positioned between the openings of the pixel definition layers at two adjacent rows; and
the second photomask body is provided with a plurality of second openings which are arranged corresponding to the plurality of rows of pixel definition layer openings at intervals and correspond to the plurality of first openings at different rows of pixel definition layer openings, a plurality of fourth openings which protrude outwards are further arranged at intervals on the side edge of each second opening, and when the plurality of second openings are arranged corresponding to the plurality of rows of pixel definition layer openings, the plurality of fourth openings are positioned between the adjacent two rows of pixel definition layer openings and are overlapped with the third openings.
2. The mask structure of claim 1, wherein the first and second mask bodies have a shape corresponding to a shape of the array substrate.
3. The mask structure of claim 1, wherein the first, second, third and fourth openings are rectangular openings.
4. The mask structure of claim 1, wherein each third opening corresponds to a position between two adjacent pixel definition layer openings of the row of pixel definition layer openings corresponding to each first opening; each fourth opening corresponds to a position between two adjacent pixel definition layer openings in the row of pixel definition layer openings corresponding to each second opening.
5. A method for forming a cathode film layer on an array substrate is characterized by comprising the following steps:
forming a first cathode film layer on the array substrate, and covering the first cathode film layer on the openings of the spaced row pixel definition layer on the array substrate; and
forming a second cathode film layer on the array substrate, covering the second cathode film layer on the openings of the pixel definition layers in the spaced rows on the array substrate, covering the openings of the pixel definition layers in different rows with the first cathode film layer, and forming a spaced overlapping part between the openings of the pixel definition layers in two adjacent rows.
6. The method of forming a cathode film layer according to claim 5, wherein the method of forming the first cathode film layer further comprises the steps of:
shielding the first photomask body on the array substrate, so that a plurality of first openings correspond to the plurality of rows of pixel definition layer openings at intervals, and a plurality of third openings are positioned between the adjacent two rows of pixel definition layer openings; and
and performing first evaporation, namely evaporating the first cathode film layer on the array substrate.
7. The method of forming a cathode film layer according to claim 6, wherein the method of forming a second cathode film layer further comprises the steps of:
shielding the second photomask body on the array substrate, enabling a plurality of second openings to correspond to the plurality of rows of pixel definition layer openings at intervals, enabling the plurality of second openings to correspond to the plurality of rows of pixel definition layer openings with the plurality of first openings, enabling the plurality of fourth openings to be located between the adjacent two rows of pixel definition layer openings and overlapping the third openings; and
and performing second evaporation, namely evaporating the second cathode film layer on the array substrate.
8. A cathode film layer on an array substrate, the cathode film layer formed on the array substrate, the cathode film layer on the array substrate comprising:
the single-layer cathode film layer region comprises a first cathode film layer and a second cathode film layer, and the first cathode film layer and the second cathode film layer are arranged on the array substrate and cover the openings of the pixel definition layers in different rows;
the double-layer cathode film layer region is a plurality of overlapping parts of the first cathode film layer and the second cathode film layer, and the overlapping parts are arranged between the openings of the adjacent rows of pixel defining layers at intervals; and
and the non-cathode film layer region is a plurality of uncovered parts of the first cathode film layer and the second cathode film layer, and the plurality of uncovered parts are arranged between the openings of the adjacent rows of pixel defining layers at intervals and are arranged corresponding to the plurality of overlapped parts at intervals.
9. The cathode film layer on the array substrate of claim 8, wherein each of the overlapping portions is disposed between two adjacent pixel-defining layer openings of each of the rows of pixel-defining layer openings, and each of the non-overlapping portions is disposed on a side of the pixel-defining layer opening of each of the rows of pixel-defining layer openings.
10. The cathode film layer on the array substrate of claim 8, wherein the first cathode film layer is a rectangular structure with a plurality of first protrusions on a plurality of sides, the plurality of first rectangular structures are spaced over the plurality of rows of pixel defining layer openings, the first protrusions are located between adjacent rows of pixel defining layer openings, the second cathode film layer is a rectangular structure with a plurality of second protrusions on a plurality of sides, the plurality of second rectangular structures are spaced over the plurality of rows of pixel defining layer openings, and the second protrusions are located between adjacent rows of pixel defining layer openings and overlap the first protrusions.
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| CN113809134A (en) * | 2021-08-26 | 2021-12-17 | 湖北长江新型显示产业创新中心有限公司 | Display panel and display device |
| CN114438457A (en) * | 2021-12-27 | 2022-05-06 | 长沙惠科光电有限公司 | Mask plate structure, OLED display panel, manufacturing method of OLED display panel and display device |
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