CN112213807A - Efficient SPP coupler and manufacturing method thereof - Google Patents
Efficient SPP coupler and manufacturing method thereof Download PDFInfo
- Publication number
- CN112213807A CN112213807A CN202011152643.XA CN202011152643A CN112213807A CN 112213807 A CN112213807 A CN 112213807A CN 202011152643 A CN202011152643 A CN 202011152643A CN 112213807 A CN112213807 A CN 112213807A
- Authority
- CN
- China
- Prior art keywords
- film layer
- thin film
- grating
- forming
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/008—Surface plasmon devices
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
Abstract
The invention relates to a high-efficiency SPP high-efficiency coupler and a preparation method thereof, wherein the coupler comprises a substrate, a metal thin film layer, a medium grating layer and an asymmetric metal grating structure; the metal thin film layer is connected with the substrate, and the medium thin film layer is respectively connected with the metal thin film layer, the medium grating layer and the asymmetric metal grating structure. The invention can realize that the medium film layer couples the one-way transmission SPP generated by the asymmetric metal grating structure to the metal film layer, thereby playing the roles of preventing SPP quenching and improving the coupling efficiency of the SPP.
Description
Technical Field
The invention relates to the technical field of surface plasmon devices, in particular to a high-efficiency SPP coupler and a manufacturing method thereof.
Background
Surface Plasmon Polariton (SPP) is a collective oscillation phenomenon in which free electrons or bound electrons are induced on the Surface of a metal structure by an external electromagnetic field. The optical fiber grating can localize incident light in a sub-wavelength region on the metal surface, breaks through the limitation of diffraction limit, realizes the modulation of light and the interaction of enhanced light and substances under the nanoscale, and has a vital significance for realizing an integrated optical circuit with a very small characteristic size and an ultrahigh transmission speed.
The SPP one-way coupler is one of important components of an integrated optical circuit, and can couple light waves propagating in a free space into a plasmon system through a specially designed coupling interface and convert the light waves into surface plasmons with controllable directions. However, how to design the metal micro-nano structure so as to efficiently couple light to the metal micro-nano structure and form the unidirectional transmission SPP still has one of the important problems at present. In addition, the existing SPP coupler structure is generally complex in preparation process and high in requirement on equipment condition, and becomes a main factor restricting large-scale application of the SPP coupler structure. Therefore, reducing the manufacturing difficulty is another important issue to be considered.
Disclosure of Invention
In order to solve the technical problems in the prior art, the invention provides the high-efficiency SPP coupler and the manufacturing method thereof.
The invention is realized by adopting the following technical scheme: a high-efficiency SPP coupler comprises a metal thin film layer, a medium grating layer and an asymmetric metal grating structure; the metal thin film layer is connected with the substrate, and the medium thin film layer is respectively connected with the metal thin film layer, the medium grating layer and the asymmetric metal grating structure.
The preparation method of the high-efficiency SPP coupler is based on the high-efficiency SPP coupler, and a metal film layer is formed on a substrate through magnetron sputtering; forming a dielectric thin film layer on the metal thin film layer through magnetron sputtering; forming photoresist on the dielectric thin film layer by a spin coating method and drying the photoresist; forming a grating layer of photoresist by double-beam interference exposure and development or a nano-imprinting method, and forming a medium grating layer of the photoresist by dry etching; and forming an inverse L-shaped or Z-shaped asymmetric metal grating structure on the photoresist by adopting an evaporation method.
Compared with the prior art, the invention has the following advantages and beneficial effects:
1. the invention can realize that the medium film layer couples the one-way transmission SPP generated by the asymmetric metal grating structure to the metal film layer, thereby playing the roles of preventing SPP quenching and improving the coupling efficiency of the SPP.
2. According to the invention, the thickness of the dielectric thin film layer is set, so that the dielectric thin film layer plays a waveguide role, and the SPP is directly transmitted in the dielectric layer.
3. The invention has simple and easy manufacturing method, simple process and high process compatibility, and the manufacturing method is suitable for large-scale processing and preparation.
Drawings
FIG. 1 is a structural diagram of a high-efficiency SPP coupler according to embodiment 1 of the present invention;
FIG. 2 is a schematic view of the present invention with a metal thin film layer separating a substrate and a dielectric thin film layer;
FIG. 3 is a schematic view of the present invention with a metal thin film layer and a dielectric grating layer separated by a dielectric thin film layer;
FIG. 4 is a structural diagram of a high-efficiency SPP coupler according to embodiment 2 of the present invention;
FIG. 5 is a schematic illustration of sample evaporation according to the present invention;
FIG. 6 is a graph showing the energy flow distribution of a single inverted L-shaped asymmetric metal grating structure perpendicular to the direction of the grating strips;
in the figure, 11 is a substrate, 12 is a metal thin film layer, 13 is a medium thin film layer, 21 is a medium grating layer, and 41 is an asymmetric metal grating structure; 31 is a tilt fixture; 51 is a crucible.
Detailed Description
The present invention will be described in further detail with reference to examples and drawings, but the present invention is not limited thereto.
Example 1
As shown in fig. 1, the high-efficiency SPP coupler of the present embodiment mainly includes: the device comprises a substrate 11, a metal thin film layer 12, a medium thin film layer 13, a medium grating layer 21 and an asymmetric metal grating structure 41; the metal thin film layer 12 is connected with the substrate 11, and the dielectric thin film layer 13 is respectively connected with the metal thin film layer 12, the dielectric grating layer 21 and the asymmetric metal grating structure 41.
Specifically, the substrate is quartz, mica, PDMS, sapphire or other materials with high transmittance in the range of 300-1600 nm; the metal thin film layer separates the substrate from the dielectric thin film layer, as shown in FIG. 2; the medium thin film layer separates the metal thin film layer from the medium grating layer, as shown in fig. 3; the metal thin film layer and the asymmetric metal grating structure are separated by the medium thin film layer, and the refractive index of the medium thin film layer is between 1.4 and 2.5.
Specifically, the thickness of the dielectric thin film layer is 5-50nm, and the dielectric thin film layer couples the one-way transmission SPP generated by the asymmetric metal grating structure to the metal thin film layer, so that the SPP quenching is prevented, and the coupling efficiency of the SPP is improved; the thickness of the metal film layer is 10-100nm, and the metal film layer is used for bearing SPP transmission media.
The refractive index of the medium in the medium grating layer is between 1.4 and 1.7; the grating period is 300-800 nm; preferably, the grating period is 400-600 nm.
The asymmetric metal grating structure is in an inverted L shape or a Z shape, and covers a part of the medium grating layer; preferably, the asymmetric metal grating structure metal thickness is greater than 50 nm; preferably, the asymmetric metal grating structure has a metal thickness of between 70-150 nm.
Example 2
As shown in fig. 4, the high-efficiency SPP coupler of the present embodiment mainly includes: the device comprises a substrate 11, a metal thin film layer 12, a medium thin film layer 13, a medium grating layer 21 and an asymmetric metal grating structure 41; the metal thin film layer 12 is connected with the substrate 11, and the dielectric thin film layer 13 is respectively connected with the metal thin film layer 12, the dielectric grating layer 21 and the asymmetric metal grating structure 41.
Specifically, the substrate is quartz, mica, PDMS, sapphire or other materials with high transmittance in the range of 300-1600 nm; the metal film layer separates the substrate from the dielectric film layer; the medium thin film layer separates the metal thin film layer from the medium grating layer; the metal thin film layer and the asymmetric metal grating structure are separated by the medium thin film layer, and the refractive index of the medium thin film layer is between 1.4 and 2.5.
Specifically, the thickness of the dielectric thin film layer is 300-800nm, if the dielectric thin film layer is located in the range, the dielectric thin film layer plays a role of a waveguide, and the SPP is directly transmitted in the dielectric layer; the thickness of the metal thin film layer is 100-200nm, which plays the role of limiting SPP.
The refractive index of the medium in the medium grating layer is between 1.4 and 1.7; the grating period is 300-800 nm; preferably, the grating period is 400-600 nm.
The asymmetric metal grating structure is in an inverted L shape or a Z shape, and covers a part of the medium grating layer; preferably, the asymmetric metal grating structure metal thickness is greater than 50 nm; preferably, the asymmetric metal grating structure has a metal thickness of between 70-150 nm.
Based on the efficient SPP coupler disclosed by the embodiment, the embodiment continuously discloses a preparation method of the efficient SPP coupler, and a metal film layer is formed on a substrate through magnetron sputtering; forming a dielectric thin film layer on the metal thin film layer through magnetron sputtering; forming photoresist on the dielectric thin film layer by a spin coating method and drying the photoresist; forming a grating layer of photoresist by double-beam interference exposure and development or a nano-imprinting method, and forming a medium grating layer of the photoresist by dry etching; and forming an inverse L-shaped or Z-shaped asymmetric metal grating structure on the photoresist by adopting an evaporation method.
The preparation method of the high-efficiency SPP coupler can be prepared according to two modes of the thickness of the dielectric thin film layer being 5-50nm and the thickness of the dielectric thin film layer being 300-800nm, and the following two embodiments are respectively used for detailed description.
Example 3
In this embodiment, the method for manufacturing the high-efficiency SPP coupler of the present invention is realized by forming a dielectric thin film layer with a thickness of 5 to 50nm, and comprises the following specific steps:
and S11, sequentially forming a nickel-gold (Ni/Au) thin film layer with the thickness of 5nm or 50nm on the quartz substrate through magnetron sputtering.
S12, forming SiO with the thickness of 50nm on the nickel-gold (Ni/Au) thin film layer by magnetron sputtering2A dielectric thin film layer.
S13 in SiO2And forming photoresist with the thickness of 200nm on the surface of the dielectric thin film layer by a spin coating method and drying the photoresist.
And S14, forming a grating layer of the photoresist through double-beam interference exposure and development or through a nano-imprinting method, and forming a medium grating layer of the photoresist through dry etching. Wherein, the grating period is 550nm, and the width of the grating strip is 200 nm.
S15, mixing quartz substrate, nickel-gold (Ni/Au) thin film layer, and SiO2The sample formed by the dielectric thin film layer and the dielectric grating layer is placed on an inclined fixing device 31 fixed in the chamber at a certain inclination angle, and evaporation is performed by using a crucible 51, as shown in fig. 5, the arrow direction is the electron beam direction. Optionally, the angle of the inclined fixing device is continuously adjustable, during evaporation, the angle of the inclined fixing device can be adjusted according to the change of the metal thickness during evaporation, and the inclination angle is 30 ° to 60 ° according to the period and duty ratio of the grating, as shown in fig. 5.
And S16, performing oblique evaporation by adopting the evaporation method of the step S15, and forming an inverted L-shaped asymmetric metal grating structure on the photoresist. Wherein the thickness h of the metal film layer is 200 nm.
By simulating the one-way transmission effect of the device formed by the steps of the preparation method, as shown in fig. 6, when the wavelength is 840nm, the energy flow distribution diagram of the single inverse L-shaped asymmetric metal grating structure is perpendicular to the direction of the grating strip (i.e., the x direction), and the energy flow of the SPP coupler is mainly distributed in the range of about 200nm on the lower surface of the nickel-gold thin film layer and is transmitted along the x negative direction. This is in contrast to the common symmetric grating energy flow propagating in two directions. Namely, the structure achieves the effect of unidirectional transmission of the SPP coupler, and can better limit propagation in the substrate. When the SPP coupler signal is extracted subsequently, the transmission condition is broken at a specific position. For example, by etching a trench structure in the substrate surface, the SPP coupler is caused to emerge by scattered light.
Example 4
In this embodiment, the method for preparing the high-efficiency SPP coupler of the present invention comprises the following specific steps by forming a dielectric thin film layer with a thickness of 300-800 nm:
and S21, sequentially forming nickel silver (Ni/Ag) thin film layers with the thickness of 3nm or 100nm on the quartz substrate through magnetron sputtering.
And S22, forming a SiNx medium thin film layer with the thickness of 500nm on the nickel silver (Ni/Ag) thin film layer through magnetron sputtering.
And S23, forming photoresist with the thickness of 200nm on the surface of the SiNx medium film layer by a spin coating method, and drying.
And S24, forming a grating layer of the photoresist through double-beam interference exposure and development or through a nano-imprinting method, and forming a medium grating layer of the photoresist through dry etching. Wherein, the grating period is 800nm, and the width of the grating strip is 200 nm.
S25, placing a sample formed by the quartz substrate, the nickel silver (Ni/Ag) thin film layer, the SiNx medium thin film layer and the medium grating layer on an inclined fixing device fixed in the cavity at a certain inclination angle, and performing evaporation by using a crucible. Optionally, the angle of the inclined fixing device is continuously adjustable, during evaporation, the angle of the device can be adjusted according to thickness change and the evaporation process, and the inclination angle is 30-60 degrees according to the period and duty ratio of the grating.
And S26, performing oblique evaporation by adopting the evaporation method of the step S25, and forming an inverted Z-shaped asymmetric metal grating structure on the photoresist. Wherein the thickness h of the metal film layer is 200 nm.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (10)
1. A high-efficiency SPP coupler is characterized by comprising a substrate, a metal thin film layer, a medium grating layer and an asymmetric metal grating structure; the metal thin film layer is connected with the substrate, and the medium thin film layer is respectively connected with the metal thin film layer, the medium grating layer and the asymmetric metal grating structure.
2. The high efficiency SPP coupler of claim 1, wherein the substrate is quartz, mica, PDMS, or sapphire.
3. The high-efficiency SPP coupler of claim 1, wherein the metal thin film layer separates the substrate from the dielectric thin film layer, the dielectric thin film layer separates the metal thin film layer from the dielectric grating layer, and the dielectric thin film layer separates the metal thin film layer from the asymmetric metal grating structure.
4. The high-efficiency SPP coupler of claim 3, wherein the asymmetric metal grating structure is "inverted L" shaped or "Z" shaped, and the asymmetric metal grating structure covers the dielectric grating layer.
5. The high efficiency SPP coupler of claim 3, wherein the index of refraction of the dielectric thin film layer is 1.4-2.5, the index of refraction of the medium in the dielectric grating layer is 1.4-1.7, and the grating period is 300-800 nm.
6. The high-efficiency SPP coupler of claim 3, wherein the dielectric thin-film layer has a thickness of 5-50nm, and the metal thin-film layer has a thickness of 10-100 nm.
7. The SPP coupler of claim 3, wherein the dielectric thin film layer has a thickness of 300-800nm and the metal thin film layer has a thickness of 100-200 nm.
8. The method for preparing a high-efficiency SPP coupler according to claim 1, wherein a metal thin film layer is formed on a substrate by magnetron sputtering; forming a dielectric thin film layer on the metal thin film layer through magnetron sputtering; forming photoresist on the dielectric thin film layer by a spin coating method and drying the photoresist; forming a grating layer of photoresist by double-beam interference exposure and development or a nano-imprinting method, and forming a medium grating layer of the photoresist by dry etching; and forming an inverse L-shaped or Z-shaped asymmetric metal grating structure on the photoresist by adopting an evaporation method.
9. The method for preparing a high-efficiency SPP coupler according to claim 8, wherein the method for preparing the dielectric thin film layer with the thickness of 5-50nm comprises the following steps:
s11, forming a nickel-gold thin film layer with the thickness of 5nm or 50nm on the quartz substrate through magnetron sputtering;
s12, forming SiO with the thickness of 50nm on the nickel-gold thin film layer through magnetron sputtering2A dielectric thin film layer;
s13 in SiO2Forming photoresist with the thickness of 200nm on the surface of the dielectric thin film layer by a spin coating method and drying the photoresist;
s14, forming a grating layer of the photoresist through double-beam interference exposure and development or through a nano-imprinting method, and forming a medium grating layer of the photoresist through dry etching; wherein, the grating period is 550nm, and the width of the grating strip is 200 nm;
s15, mixing the quartz substrate, the nickel-gold film layer and the SiO2The sample formed by the medium film layer and the medium grating layer is obliquely placed on an oblique fixing device fixed in the cavity for evaporation;
and S16, performing oblique evaporation by adopting the evaporation method of the step S15, and forming an inverted L-shaped asymmetric metal grating structure on the photoresist.
10. The method as claimed in claim 8, wherein the method for preparing the SPP coupler with a dielectric thin film layer thickness of 300-800nm comprises the following steps:
s21, forming a nickel-silver film layer with the thickness of 3nm or 100nm on the quartz substrate through magnetron sputtering;
s22, forming a SiNx medium thin film layer with the thickness of 500nm on the nickel-silver thin film layer through magnetron sputtering;
s23, forming photoresist with the thickness of 200nm on the surface of the SiNx medium thin film layer by a spin coating method, and drying the photoresist;
s24, forming a grating layer of the photoresist through double-beam interference exposure and development or through a nano-imprinting method, and forming a medium grating layer of the photoresist through dry etching; wherein, the grating period is 800nm, and the width of the grating strip is 200 nm;
s25, obliquely placing a sample formed by the quartz substrate, the nickel-silver thin film layer, the SiNx medium thin film layer and the medium grating layer on an oblique fixing device fixed in the cavity for evaporation;
and S26, performing oblique evaporation by adopting the evaporation method of the step S25, and forming an inverted Z-shaped asymmetric metal grating structure on the photoresist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011152643.XA CN112213807A (en) | 2020-10-26 | 2020-10-26 | Efficient SPP coupler and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011152643.XA CN112213807A (en) | 2020-10-26 | 2020-10-26 | Efficient SPP coupler and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112213807A true CN112213807A (en) | 2021-01-12 |
Family
ID=74055180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011152643.XA Pending CN112213807A (en) | 2020-10-26 | 2020-10-26 | Efficient SPP coupler and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112213807A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114047567A (en) * | 2021-06-22 | 2022-02-15 | 重庆大学 | Method for generating and regulating asymmetric surface plasmon mode |
| CN114296185A (en) * | 2022-02-14 | 2022-04-08 | 西北工业大学 | Photonic device structure integrating micro-nano particles and optical waveguide |
-
2020
- 2020-10-26 CN CN202011152643.XA patent/CN112213807A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114047567A (en) * | 2021-06-22 | 2022-02-15 | 重庆大学 | Method for generating and regulating asymmetric surface plasmon mode |
| CN114047567B (en) * | 2021-06-22 | 2023-07-18 | 重庆大学 | Asymmetric surface plasmon mode generation and regulation method |
| CN114296185A (en) * | 2022-02-14 | 2022-04-08 | 西北工业大学 | Photonic device structure integrating micro-nano particles and optical waveguide |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Furuhashi et al. | Development of microfabricated TiO2 channel waveguides | |
| CN110133771B (en) | Method for realizing ultra-narrow band absorption and sensing by using structural symmetry defects | |
| CN103176294B (en) | A kind of all-fiber electro-optical modulator based on grapheme material and method thereof | |
| WO2010040303A1 (en) | Surface-plasmon-polaritons tunable optical resonant ring filter | |
| WO2015051722A1 (en) | Spatial light modulator based on metamaterial structure and method of manufacturing same | |
| CN112213807A (en) | Efficient SPP coupler and manufacturing method thereof | |
| US8358880B2 (en) | Hybrid coupling structure of the short range plasmon polariton and conventional dielectric waveguide, a coupling structure of the long range plasmon polariton and conventional dielectric waveguide, and applications thereof | |
| CN108693602A (en) | A kind of three-dimensionally integrated more microcavity resonator, filter devices of silicon nitride and preparation method thereof | |
| CN102393550A (en) | Dimming delay line for silica delay and manufacturing method thereof | |
| Xi et al. | Internal high-reflectivity omni-directional reflectors | |
| CN110687695A (en) | Trapezoidal graphene-based polarization-insensitive organic polymer absorption type optical modulator | |
| CN110716327A (en) | Silicon electro-optical modulator based on ITO directional coupler | |
| Shah et al. | Enhanced performance of ITO-assisted electro-absorption optical modulator using sidewall angled silicon waveguide | |
| CN104297948A (en) | Waveguide thermal optical switch based on long-period metal surface plasma and preparation method of waveguide thermal optical switch | |
| Gosciniak et al. | Study of TiN nanodisks with regard to application for Heat-Assisted Magnetic Recording | |
| WO2021068606A1 (en) | Optical modulator | |
| Saber et al. | Broadband all-silicon hybrid plasmonic TM-pass polarizer using bend waveguides | |
| WO2022121585A1 (en) | On-chip subwavelength binding waveguide and preparation method therefor | |
| CN106896434A (en) | A kind of all-optical diode | |
| CN110161724A (en) | The modulator approach and preparation method of a kind of electrooptic modulator, electrooptic modulator | |
| CN108802900B (en) | Nanowire optical waveguide based on all-dielectric | |
| Rajput et al. | All optical modulation in vertically coupled indium tin oxide ring resonator employing epsilon near zero state | |
| CN207937633U (en) | A kind of nanoscale all-optical diode based on more groove MIM waveguides | |
| CN109375389B (en) | Graphene electro-optical modulator and preparation method thereof | |
| Li et al. | Heterogeneously integrated thin-film lithium niobate electro-optic modulator based on slot structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |