WO2021068606A1 - Optical modulator - Google Patents

Optical modulator Download PDF

Info

Publication number
WO2021068606A1
WO2021068606A1 PCT/CN2020/105585 CN2020105585W WO2021068606A1 WO 2021068606 A1 WO2021068606 A1 WO 2021068606A1 CN 2020105585 W CN2020105585 W CN 2020105585W WO 2021068606 A1 WO2021068606 A1 WO 2021068606A1
Authority
WO
WIPO (PCT)
Prior art keywords
hole
waveguide
electrode
holes
heating layer
Prior art date
Application number
PCT/CN2020/105585
Other languages
French (fr)
Chinese (zh)
Inventor
张晗
陈兴
罗小玲
Original Assignee
深圳大学
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳大学 filed Critical 深圳大学
Publication of WO2021068606A1 publication Critical patent/WO2021068606A1/en

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on thermo-optic effects

Definitions

  • the present invention relates to the field of optoelectronic technology, and more specifically, to an optical modulator.
  • Electro-optical modulators are widely used as important key functional devices in communication systems.
  • Traditional electro-optical modulators such as inorganic modulators, Group III and Five semiconductor modulators, have their own advantages and disadvantages.
  • Two-dimensional materials represented by graphene and black phosphorus have physical and chemical properties that are difficult to match with traditional three-dimensional conventional materials.
  • the band gap of black phosphorus changes with the number of layers, and has ultra-high carrier mobility and strong heat.
  • Optical effects, etc., these characteristics make high-performance electro-optic modulators based on two-dimensional materials possible.
  • Many graphene-based modulators mainly use the evanescent field interaction between graphene and the waveguide, which has low efficiency and is not conducive to improving the extinction ratio of the modulator.
  • the interaction between materials and light can be enhanced through special structures such as ring resonators and hybrid waveguides, overall there are still shortcomings such as small modulation depth, high energy consumption, and large device volume.
  • An optical modulator comprising a substrate, a first electrode, a second electrode, a waveguide, and a heating layer; the first electrode, the second electrode, and the waveguide are arranged on the same surface of the substrate at intervals On; one end of the heating layer is connected to the first electrode, and the other end is connected to the second electrode; the waveguide is provided with through holes arranged in sequence along the light transmission direction; the heating layer at least covers the pass Hole; The heating layer is used to convert the electric energy of the applied electric field into heat energy, so that the temperature of the heating layer and the waveguide rise, and the light refractive index of the waveguide and the heating layer, or the waveguide is changed, so that the intensity of the light transmitted through the waveguide Change occurs to realize the regulation of light transmission spectrum.
  • the optical modulator further includes a first protective member, a second protective member, and a third protective member; the first electrode, the first protective member, the waveguide, the second protective member, and the second electrode are sequentially along the first direction Arrangement; the first direction is perpendicular to the light transmission direction; the third protective member is provided on the surface of the heating layer opposite to the waveguide, and the first electrode, the second electrode, the first protective member, and the second The protective member, the waveguide and the heating layer are encapsulated in the space enclosed by the third protective member and the substrate.
  • the width of the waveguide is 300nm-800nm; the length is 1 ⁇ m-100 ⁇ m.
  • the heating layer is a black phosphorous layer, a graphene layer, a transition metal nitride or carbide layer, or a metal material layer.
  • the thickness of the heating layer is 0.6-20 nm.
  • the through hole is a round hole, an ellipse or a polygonal hole.
  • the through hole is filled with a substance having a refractive index different from that of the waveguide.
  • each of the through holes has the same size; the through holes are arranged at equal intervals along the light transmission direction;
  • the radii of the through-holes first decrease in arithmetic along the light transmission direction, and then increase in arithmetic, in a symmetrical arrangement
  • the distance between two adjacent through holes gradually decreases along the light transmission direction, and then gradually increases, showing a symmetrical arrangement.
  • the through holes are round holes, and the number of through holes is N;
  • is equal to ⁇ r 2.
  • the waveguide is provided with through slots, and the through slots are provided at the N/2 th through hole and the N/2+1 th through hole along the light transmission direction. Between them, it is used to connect the N/2 th through hole with the N/2+1 th through hole.
  • the optical modulator of the present invention breaks the integrity of the waveguide by perforating the waveguide, and only the light that meets the resonance condition can be transmitted through the waveguide, so that the optical modulator has a higher modulation depth.
  • black phosphor has excellent electrical properties and high thermo-optical coefficient, it has low energy consumption.
  • FIG. 1 is a schematic diagram of a partially cut-away structure of an optical modulator according to an embodiment of the present invention.
  • Fig. 2 is a cross-sectional view of an optical modulator according to an embodiment of the present invention.
  • Fig. 3 is a perspective top view of a light modulator according to an embodiment of the present invention.
  • Fig. 4 is a perspective top view of a light modulator according to another embodiment of the present invention.
  • Fig. 5 is a graph showing the transmittance of the light modulator at different temperatures according to an embodiment of the present invention.
  • Fig. 6 is a distribution diagram of electric field intensity at different temperatures in the embodiment of Fig. 5.
  • Fig. 7 is a graph showing the transmittance of the light modulator at different temperatures according to another embodiment of the present invention.
  • Fig. 8 is a distribution diagram of electric field intensity at different temperatures in the embodiment of Fig. 7.
  • Light modulators are used to control the intensity of light. They are divided into electro-optical, thermo-optical, acousto-optical, and all-optical.
  • the electro-optical modulator is a device that ultimately regulates the refractive index, absorptivity, amplitude, or phase of the output light through changes in voltage or electric field. It is superior to other types of modulators in terms of loss, power consumption, speed, and integration. In the light emission, transmission, and reception process of the overall optical communication, the light modulator is used to control the intensity of light, and its role is very important.
  • Waveguide refers to the structure used to direct and guide electromagnetic waves.
  • waveguide refers to hollow metal waveguides and surface wave waveguides of various shapes. The former completely confines the transmitted electromagnetic waves in the metal tube, which is also called closed waveguide; the latter confines the guided electromagnetic waves around the waveguide structure, also called Open the waveguide.
  • the light modulator 100 is used to modulate the intensity of light, and it includes a substrate 10, a first electrode 31, a second electrode 32, a waveguide 70 and a heating layer 90.
  • the first electrode 31, the second electrode 32, and the waveguide 70 are arranged on the same surface of the substrate 10 at intervals.
  • One end of the heating layer 90 is connected to the first electrode 31, and the other end is connected to the second electrode 32.
  • the waveguide 70 is provided with through holes 71 arranged in sequence along the light transmission direction (as shown by arrow B in FIG. 1).
  • the heating layer 90 covers at least the through hole 71.
  • the heating layer 90 is used to convert the electric energy of the applied electric field into heat energy, so that the temperature of the heating layer 90 and the waveguide 70 rises, and the refractive index of the waveguide 70 and the heating layer 90, or the waveguide 70 is changed, so that the light transmitted through the waveguide 70
  • the intensity of the light changes to realize the regulation of the light transmission spectrum.
  • the optical modulator 100 of the present invention utilizes an external electric field to heat the heating layer 90, which causes the temperature of the waveguide 70 and the heating layer 90 to rise, thereby changing the refractive index of the light from the waveguide 70 or the waveguide 70 and the heating layer 90 so as to transmit through the waveguide.
  • the intensity of the light at 70 is changed, so as to realize the regulation of the transmission spectrum.
  • the integrity of the waveguide 70 is destroyed by the through hole 71, and the transmission of electromagnetic waves in the waveguide 70 will be affected. Only the electromagnetic wave that meets the resonance condition frequency can be transmitted.
  • the resonance condition is affected by the refractive index of the material, the size and relative The influence of location distribution.
  • the optical modulator 100 of the present invention breaks the integrity of the waveguide 70 by perforating the waveguide 70, and only light that meets the resonance condition can be transmitted through the waveguide 70, so that the optical modulator has a higher modulation depth.
  • the light modulator 100 of the present invention further includes a first protective member 51, a second protective member 52 and a third protective member 53.
  • the first electrode 31, the first protective member 51, the waveguide 70, the second protective member 52, and the second electrode 32 are arranged in sequence along the first direction (shown by arrow A in Fig. 1); the first direction is perpendicular to the light transmission direction;
  • the third protective member 53 is provided on the surface of the heating layer 90 opposite to the waveguide 70, and combines the first electrode 31, the second electrode 32, the first protective member 51, the second protective member 52, the waveguide 70, and the waveguide 70.
  • the thermal layer 90 is encapsulated in the space enclosed by the third protective member 53 and the substrate 10.
  • both the first protective member 51 and the second protective member 52 are made of insulating materials and used to support the heating layer 90 to insulate the first electrode 31 and the second electrode 32 from the waveguide 70.
  • the third protective member 53 is made of an insulating material, and is used to prevent the waveguide 70, the heating layer 90, the first electrode 31 and the second electrode 32 from being oxidized, and to insulate the first electrode 31 and the second electrode 32 from the outside.
  • the separation distance between the first electrode 31 and the waveguide 70 is equal to the separation distance between the second electrode 32 and the waveguide 70.
  • the distance between the first electrode 31 and the waveguide 70 is 100 nm-1000 nm.
  • the distance between the second electrode 32 and the waveguide 70 is 100 nm-1000 nm.
  • the substrate 10 is an insulating material for supporting the waveguide 70, the first electrode 31 and the second electrode 32.
  • the substrate 10 is a silicon dioxide substrate.
  • the substrate refers to a clean single crystal sheet with a specific crystal plane and appropriate electrical, optical, and mechanical properties for growing an epitaxial layer.
  • the first electrode 31 and the second electrode 32 are metal materials with good electrical conductivity, preferably gold, silver, copper, platinum or aluminum.
  • the first electrode 31 and the second electrode 32 can be prepared by a method such as magnetron sputtering.
  • the waveguide 70 is a semiconductor material, preferably silicon or a group III-V semiconducting material. It can be made by photolithography or oxidation.
  • the width of the waveguide 70 is 300 nm-800 nm. Generally, single-mode light is transmitted in the waveguide 70. When the width of the waveguide 70 is greater than 800 nm, it becomes a multi-mode waveguide, and the optical modulator 100 of the present invention is no longer applicable. When the width of the waveguide 70 is less than 300 nm, the cut-off frequency of the waveguide 70 will increase, that is, the maximum transmission wavelength will be shortened. More preferably, when the width of the waveguide 70 is 450-500 nm, the modulation depth of the light modulator 100 is the highest.
  • the length of the waveguide 70 in the light transmission direction is 1 ⁇ m-100 ⁇ m.
  • the length of the waveguide in the light transmission direction is less than 1 ⁇ m, the light transmission distance becomes shorter, reducing the extinction ratio and modulation depth.
  • the number of etched holes decreases, reducing the modulation depth.
  • it is greater than 100 ⁇ m, the volume of the optical modulator 100 is too large, and there is no rush for large-scale on-chip integration, which increases the insertion loss and energy consumption of the optical modulator 100.
  • the heating layer 90 is a black phosphorous layer, a graphene layer, a transition metal nitride or carbide layer, or a metal material layer.
  • the thickness of the heating layer 90 is 0.6-20 nm.
  • the heating layer 90 is used to convert the electric energy of the applied electric field into heat energy, so as to increase the temperature of the heating layer 90 and the waveguide 70. Furthermore, the optical refractive index of the waveguide 70 or the waveguide 70 on the heating layer 90 is changed.
  • black phosphorous, graphene, and transition metal nitride or carbide layers have different optical refractive indices at different temperatures
  • the heating layer 90 is a black phosphorous layer or a graphene layer
  • the heating The optical refractive index of the layer 90 and the waveguide 70 will both change, so that an evanescent field interaction occurs between the heating layer 90 and the waveguide 70, which further improves the modulation depth of the optical modulator.
  • the number of heating layers is 1-30.
  • the band gap of black phosphorus, graphene, or transition metal nitride or carbide is large, and the intrinsic absorption of light is relatively small, which will reduce the loss of the optical modulator 100.
  • Increasing the number of layers of the heating layer 90 will increase the loss of the light modulator, and will also affect the number of carriers and conductivity of black phosphorus, graphene, or transition metal nitrides or carbides. As the number of layers increases, the conductivity The increase in rate can better convert electrical energy into heat.
  • the heating layer 90 can be prepared by a method such as mechanical peeling or liquid phase peeling.
  • the heating layer 90 is a black phosphorous layer, it is easily oxidized in the air, and the stability of the black phosphorous is improved by methods such as chemical modification.
  • an insulating isolation layer (not shown) is further provided on the side of the heating layer 90 close to the waveguide 70, and the insulating isolation layer includes Al 2 O 3 or SiO 2 .
  • the thickness of the insulating isolation layer is 5-10 nm.
  • the through hole 71 may be filled with a substance with a refractive index different from that of the waveguide 70, specifically, it may be air, an insulating material, a metal material, or a semiconductor material.
  • a substance with a refractive index different from that of the waveguide 70 specifically, it may be air, an insulating material, a metal material, or a semiconductor material.
  • methods such as chemical vapor deposition or magnetron sputtering can be used.
  • the through hole 71 is a round hole, an ellipse or a polygonal hole.
  • the modulation depth of the light modulator can be increased.
  • the number of through holes 71 is at least one. At least one through hole 71 is arranged along the light transmission direction.
  • the radius of the through hole 71 is 10 nm-400 nm.
  • the distance between two adjacent through holes 71 is 10 nm-1000 nm.
  • the through hole 71 mainly serves to break the integrity of the loop waveguide and cause resonance. When the radius is too small, resonance cannot be caused, and when the radius is too large, the width of the waveguide will be correspondingly widened, increasing the energy consumption and loss of the modulator. As the radius of the hole increases, the loss of the modulator will increase, and the modulation depth and energy consumption will also increase.
  • the through holes 71 have the same size and are arranged at equal distances along the light transmission direction.
  • the through holes 71 are circular holes, and the radius of the through holes 71 along the light transmission direction first decreases with equal difference, and then increases with the same difference, in a symmetrical arrangement; that is, assume that the number of through holes 71 is If N is greater than or equal to 3, the radius of the first through hole 71 is equal to the radius of the N th through hole 71, the radius of the second through hole 71 is equal to the radius of the N-1 th through hole 71, and so on.
  • the difference is ⁇ r 1 ; the radius of the M+1 th through hole to the N th through hole increases in arithmetic, and the arithmetic difference is ⁇ r 2 , and
  • the value is ⁇ r 1 ; the arithmetic difference of the radius from the Mth through hole to the Nth through hole increases, and the arithmetic difference is ⁇ r 2 , and
  • and ⁇ r 2 are 0-100 nm, more preferably, 0-30 nm. The larger the
  • the number N of the through holes 71 is 8, and the radii of the through holes 71 along the light transmission direction are 300nm, 270nm, 250nm, 220nm, 220nm, 250nm, 270nm, 300nm in order. In a specific embodiment, the number of through holes 71 is 7, and the radius of the through holes 71 along the light transmission direction are 320 nm, 280 nm, 250 nm, 210 nm, 250 nm, 280 nm, and 320 nm in order.
  • the distance between two adjacent through holes 71 first gradually decreases along the light transmission direction, and then gradually increases, in a symmetrical arrangement.
  • and ⁇ d 2 are 0-300 nm. The smaller the values of
  • the waveguide 70 has a stronger resonance effect. Because the radius of the middle hole is small and the distance is short, the light modulator has a stronger light field local effect and stronger resonance, which can achieve a higher modulation depth. At the same time, the unevenly distributed through holes can make the resonance peak narrower, that is, the half-height width of the peak of the transmission spectrum is smaller, so that a higher modulation depth can be achieved under the same voltage and energy consumption can be reduced.
  • the waveguide 70 is provided with a through groove 73, and the through groove 73 is provided at the N/2 th through hole 71 and the first through hole 71 along the light transmission direction.
  • the N/2+1 through holes 71 are used to connect the N/2 th through hole 71 and the N/2+1 th through hole 71.
  • the width of the through groove 73 in the first direction is 10-100 nm. The smaller the through slot 73 is, the better the field local effect is, the corresponding modulation depth will increase, and the energy consumption will be reduced. At the same time, too large will increase the insertion loss of the modulator and reduce the modulation depth of the modulator.
  • the through slot 73 is rectangular, and the rectangular through slot 73 makes the processing of the light modulator of the present invention easier.
  • the through slot 73 is beneficial to improve the light field local effect of the light modulator 100, and can better improve the modulation depth of the light modulator.
  • the heights of the first electrode 31, the second electrode 32, the first protective member 51, the second protective member 52, and the waveguide 70 are the same. This can simplify the preparation process.
  • the light modulator of the present invention will be described in more detail below through specific embodiments.
  • the light modulator 100 based on black phosphorous in this embodiment includes a substrate 10, a first electrode 31, a second electrode 32, a first protection member 51, a second protection member 52, a waveguide 70, a heating layer 90, and a third protection. Piece 53.
  • the first electrode 31, the first protection member 51, the waveguide 70, the second protection member 53, and the second electrode 31 are arranged in a first direction (as shown by arrow A in FIG. 1) and arranged on the substrate 10.
  • the waveguide 70 is provided with through holes 71 arranged along the light transmission direction (shown by arrow B in FIG. 1).
  • the first direction is perpendicular to the light transmission direction.
  • the heating layer 90 at least partially covers the first electrode 31 and the second electrode 32, and completely covers the through hole 71; the third protection member 53 is formed on the heating layer 90 and completely covers the first electrode 31, the second electrode 32, The first protective member 51, the second protective member 52, the waveguide 70, and the heating layer 90.
  • the substrate 10 is made of silicon dioxide.
  • the waveguide 70 is made of silicon, and the waveguide 70 has a width of 500 nm and a thickness of 220 nm.
  • the through hole 71 is filled with air.
  • the first electrode 31 and the second electrode are made of gold.
  • the heating layer 90 is a single layer.
  • the first protective member 51, the second protective member 52 and the third protective member 53 are made of silica.
  • the through holes 71 are round holes, the number of through holes 71 is 10, a rectangular through groove 73 is provided between the fifth through hole 71 and the sixth through hole, and the length of the rectangular through groove 73 in the first direction is 50 nm, The length of the light transmission direction is 530 nm.
  • the radius r of the ten through holes 71 along the light transmission direction are 139.4 nm, 130.9 nm, 122.4 nm, 113.9 nm, 105.4 nm, 105.4 nm, 113.9 nm, 122.4 nm, 130.9 nm, and 139.4 nm in order.
  • the distances between two adjacent holes of the ten through holes 71 along the light transmission direction are respectively: 385 nm, 360 nm, 335 nm, 310 nm, 530 nm, 310 nm, 335 nm, 360 nm, and 385 nm.
  • the transmittance of the optical modulator and the intensity distribution of the magnetic field in the waveguide 70 at two different temperatures of 300K and 400K are tested, and the finite difference time domain method is used to simulate the software LumericalSuites calculation suite .
  • an external electric field is applied to the electrode, the optical parameters of the heating layer are calculated using the Drude model, and the optical parameters of the remaining materials use the software's own parameters, and the simulation accuracy is set to the highest.
  • a plane field monitor is set in the thickness direction of the waveguide, a mode light source is used on the incident surface of the waveguide, and an energy monitor is used on the exit surface to save the light field distribution and transmission spectrum under different conditions.
  • the test results are shown in Figure 5 and Figure 6. Show.
  • Figure 5 shows the transmittance curves of the light modulator at 300K and 400K. It can be seen from Figure 5 that when the temperature changes, the transmittance curve shifts significantly. When the temperature is 400K, the corresponding modulation depth at 1550nm wavelength is 18.32%, and the optimized modulation rate can reach kilohertz.
  • Fig. 6 is a distribution diagram of electric field intensity at different temperatures. It can be seen from Fig. 6 that the same wavelength at different temperatures has different resonance modes and resonance intensities.
  • the light modulator 100 based on black phosphorous in this embodiment includes a substrate 10, a first electrode 31, a second electrode 32, a first protection member 51, a second protection member 52, a waveguide 70, a heating layer 90, and a third protection. Piece 53.
  • the first electrode 31, the first protection member 51, the waveguide 70, the second protection member 53, and the second electrode 31 are arranged in a first direction (as shown by arrow A in FIG. 1) and arranged on the substrate 10.
  • the waveguide 70 is provided with through holes 71 arranged along the light transmission direction (shown by arrow B in FIG. 1).
  • the first direction is perpendicular to the light transmission direction.
  • the heating layer 90 at least partially covers the first electrode 31 and the second electrode 32, and completely covers the through hole 71; the third protection member 53 is formed on the heating layer 90 and completely covers the first electrode 31, the second electrode 32, The first protective member 51, the second protective member 52, the waveguide 70, and the heating layer 90.
  • the substrate 10 is made of silicon dioxide.
  • the waveguide 70 is made of silicon, and the waveguide 70 has a width of 500 nm and a thickness of 220 nm.
  • the through hole 71 is filled with gold.
  • the first electrode 31 and the second electrode are made of gold.
  • the heating layer 90 is a single layer.
  • the first protective member 51, the second protective member 52 and the third protective member 53 are made of silica.
  • the through holes 71 are round holes, the number of the through holes 71 is 10, and the radius is 100 nm.
  • the spacing between two adjacent through holes is 200 nm.
  • the length of the waveguide 70 is 2 ⁇ m.
  • the length of the modulator working area is 2 ⁇ m, which can achieve a higher modulation depth, and its maximum modulation depth is 11.78%. It can be seen from Figure 7 that at different temperatures, the transmission spectrum moves to achieve the purpose of modulation, the depth of modulation can be reached, and the rate can reach kilohertz.
  • Figure 8 shows the light field distribution at different temperatures, indicating that at different temperatures, there are slightly different resonance modes, that is, temperature has a certain influence on the resonance mode.

Abstract

The present invention relates to an optical modulator, comprising a substrate, a first electrode, a second electrode, a waveguide, and a heat-induced layer, wherein the first electrode, the second electrode, and the waveguide are arranged at intervals on the same surface of the substrate; one end of the heat-induced layer is connected to the first electrode, and the other end is connected to the second electrode; along a light transmission direction, the waveguide is provided with through holes that are sequentially arranged; the heat-induced layer at least covers the through holes; the heat-induced layer is used for converting the electric energy of an external electric field into heat energy, so that the temperature of the heat-induced layer and that of the waveguide rise, and the optical refractive indexes of the waveguide and the heat-induced layer are changed or the optical refractive index of the waveguide is changed, and thus, the intensity of light transmitting through the waveguide is changed, and the regulation and control of a light transmission spectrum is realized. The optical modulator of the present invention has a large modulation depth, and is small in device area and low in energy consumption.

Description

光调制器Light modulator
本发明要求2019年10月10日递交的发明名称为“光调制器”的申请号201910961011.9的在先申请优先权，上述在先申请的内容以引入的方式并入本文本中。The present invention claims the priority of a prior application filed on October 10, 2019 under the title of "Optical Modulator" application number 201910961011.9, and the content of the foregoing prior application is incorporated into this text by way of introduction.
技术领域Technical field
本发明涉及光电技术领域，更具体地，涉及一种光调制器。The present invention relates to the field of optoelectronic technology, and more specifically, to an optical modulator.
背景技术Background technique
电光调制器作为通信***中的重要关键功能器件应用十分广泛，传统的电光调制器，例如无机物调制器、三五族半导体调制器等，他们各自有各自的优缺点。Electro-optical modulators are widely used as important key functional devices in communication systems. Traditional electro-optical modulators, such as inorganic modulators, Group III and Five semiconductor modulators, have their own advantages and disadvantages.
以石墨烯、黑磷等为代表的二维材料具有传统三维常规材料难以企及的物理化学特性，例如黑磷带隙随着层数改变，具有超高的载流子迁移率和很强的热光效应等，这些特性使得基于二维材料的高性能电光调制器成为可能。许多基于石墨烯的调制器主要是利用石墨烯与波导的倏逝场相互作用，效率较低，不利于提升调制器的消光比。虽然可以通过环形谐振腔和杂化波导等特殊结构增强材料与光的相互作用，但是整体来讲仍然存在调制深度小、能耗高、器件体积较大等缺陷。Two-dimensional materials represented by graphene and black phosphorus have physical and chemical properties that are difficult to match with traditional three-dimensional conventional materials. For example, the band gap of black phosphorus changes with the number of layers, and has ultra-high carrier mobility and strong heat. Optical effects, etc., these characteristics make high-performance electro-optic modulators based on two-dimensional materials possible. Many graphene-based modulators mainly use the evanescent field interaction between graphene and the waveguide, which has low efficiency and is not conducive to improving the extinction ratio of the modulator. Although the interaction between materials and light can be enhanced through special structures such as ring resonators and hybrid waveguides, overall there are still shortcomings such as small modulation depth, high energy consumption, and large device volume.
发明内容Summary of the invention
有鉴于此，有必要提供一种光调制器，其具有较高的调制深度，且能耗低。In view of this, it is necessary to provide an optical modulator that has a higher modulation depth and low energy consumption.
一种光调制器，其包括衬底、第一电极、第二电极、波导及致热层；所述第一电极、所述第二电极、所述波导间隔设置在所述衬底的同一表面上；所述致热层的一端连接所述第一电极，另一端连接所述第二电极；所述波导沿光传输方向设有依次排列的通孔；所述致热层至少覆盖所述通孔；所述致热层用于将外加电场的电能转化为热能，使致热层及波导温度上升，改变波导与致热层、或波导的光折射率，从而使得透射过波导的光的强度发生变化，实现对光透射谱的调控。An optical modulator, comprising a substrate, a first electrode, a second electrode, a waveguide, and a heating layer; the first electrode, the second electrode, and the waveguide are arranged on the same surface of the substrate at intervals On; one end of the heating layer is connected to the first electrode, and the other end is connected to the second electrode; the waveguide is provided with through holes arranged in sequence along the light transmission direction; the heating layer at least covers the pass Hole; The heating layer is used to convert the electric energy of the applied electric field into heat energy, so that the temperature of the heating layer and the waveguide rise, and the light refractive index of the waveguide and the heating layer, or the waveguide is changed, so that the intensity of the light transmitted through the waveguide Change occurs to realize the regulation of light transmission spectrum.
其中，所述光调制器还包括第一保护件、第二保护件及第三保护件；所述第一电极、第一保护件、波导、第二保护件、第二电极沿第一方向依次排列；所述第一方向与光传输方向垂直；所述第三保护件设在所述致热层与波导相对的表面上，并将第一电极、第二电极、第一保护件、第二保护件、波导及致热层封装在所述第三保护件与所述衬底围成的空间内。Wherein, the optical modulator further includes a first protective member, a second protective member, and a third protective member; the first electrode, the first protective member, the waveguide, the second protective member, and the second electrode are sequentially along the first direction Arrangement; the first direction is perpendicular to the light transmission direction; the third protective member is provided on the surface of the heating layer opposite to the waveguide, and the first electrode, the second electrode, the first protective member, and the second The protective member, the waveguide and the heating layer are encapsulated in the space enclosed by the third protective member and the substrate.
其中，所述波导的宽度为300nm-800nm；长度为1μm-100μm。Wherein, the width of the waveguide is 300nm-800nm; the length is 1μm-100μm.
其中，所述致热层为黑磷层、石墨烯层、过渡金属氮化物或碳化物层或金属材料层。Wherein, the heating layer is a black phosphorous layer, a graphene layer, a transition metal nitride or carbide layer, or a metal material layer.
其中，所述致热层的厚度为0.6-20nm。Wherein, the thickness of the heating layer is 0.6-20 nm.
其中，所述通孔为圆孔、椭圆或多边形孔。Wherein, the through hole is a round hole, an ellipse or a polygonal hole.
其中，所述通孔中填充与所述波导折射率不同的物质。Wherein, the through hole is filled with a substance having a refractive index different from that of the waveguide.
其中，每个所述通孔的大小相等；所述通孔沿光传输方向等间距排列；Wherein, each of the through holes has the same size; the through holes are arranged at equal intervals along the light transmission direction;
或者所述通孔的半径沿光传输方向先等差递减，再等差递增，呈对称排列；Or the radii of the through-holes first decrease in arithmetic along the light transmission direction, and then increase in arithmetic, in a symmetrical arrangement;
或者相邻两通孔之间的距离沿光传输方向先逐渐递减，再逐渐递增，呈对称排列。Or the distance between two adjacent through holes gradually decreases along the light transmission direction, and then gradually increases, showing a symmetrical arrangement.
其中，所述通孔为圆孔，所述通孔的数量为N；Wherein, the through holes are round holes, and the number of through holes is N;
当N＝2M，M为大于等于2的整数时，沿光传输方向，第1个通孔到第M个通孔的半径等差递减，等差差值为Δr 1；第M+1个通孔到第N个通孔的半径等差递增，等差差值为Δr 2； When N=2M and M is an integer greater than or equal to 2, along the light transmission direction, the radius of the first through-hole to the M-th through-hole decreases by arithmetic difference, and the arithmetic difference is Δr 1 ; The arithmetic difference of the radius from the hole to the Nth through hole increases, and the arithmetic difference is Δr 2 ;
当N＝2M+1，M为大于等于2的整数，沿光传输方向，第1个通孔到第M+1个通孔的半径等差递减，等差差值为Δr 1，第M+1个通孔到第N个通孔的半径等差递增，等差差值为Δr 2； When N=2M+1, M is an integer greater than or equal to 2, along the light transmission direction, the radius of the first through hole to the M+1 through hole is reduced by the same difference, the arithmetic difference is Δr 1 , the M+th The arithmetic difference of the radius from one through hole to the Nth through hole increases, and the arithmetic difference is Δr 2 ;
所述|Δr 1|与Δr 2相等。 The |Δr 1 | is equal to Δr 2.
其中，所述通孔的数量N大于等于5，沿光传输方向第i+1孔到i孔的距离为d (i+1)i，i＝1,2,3……N； Wherein, the number N of the through holes is greater than or equal to 5, and the distance from the i+1th hole to the i hole along the light transmission direction is d (i+1)i , i=1, 2, 3...N;
当N＝2M，M为大于等于3的整数时，则第1通孔到第M通孔满足关系式d (i+1)(i+2)-d (i+1)i为等差递减数列，其中i＝1,2,3……M，等差差值为Δd 1；第M+1通孔到第N通孔满足d (i+1)(i+2)-d (i+1)i为等差递增数列，其中i＝M+1,M+2……N，等差差值为Δd 2； When N=2M and M is an integer greater than or equal to 3, then the first through hole to the Mth through hole satisfy the relational expression d (i+1)(i+2) -d (i+1) i is equal and decreasing Number sequence, where i=1, 2, 3……M, the arithmetic difference is Δd 1 ; the M+1 th through hole to the N th through hole satisfy d (i+1)(i+2) -d (i+ 1) i is an arithmetic increasing sequence, where i=M+1, M+2...N, and the arithmetic difference is Δd 2 ;
当N＝2M-1，M为大于等于3的整数时，则第1通孔到第M通孔满足关系式d (i+1)(i+2)-d (i+1)i为等差递减数列，其中i＝1,2,3……M，等差差值为Δd 1；第M+1通孔到第N通孔满足d (i+1)(i+2)-d (i+1)i为等差递增数列，其中i＝M,M+2……N，等差差值为Δd 2； When N=2M-1 and M is an integer greater than or equal to 3, then the first through hole to the Mth through hole satisfy the relation d (i+1)(i+2) -d (i+1) i is equal Decreasing difference sequence, where i=1, 2, 3……M, the arithmetic difference is Δd 1 ; the M+1 th through hole to the N th through hole satisfy d (i+1)(i+2) -d ( i+1) i is an arithmetic increasing sequence, where i=M, M+2...N, and the arithmetic difference is Δd 2 ;
所述|Δd 1|与Δd 2相等。 Said |Δd 1 | is equal to Δd 2.
其中，当所述通孔的数量N为偶数时，所述波导上设有通槽，所述通槽设在沿光传输方向第N/2个通孔和第N/2+1个通孔之间，用于将第N/2个通孔与第N/2+1个通孔连通。Wherein, when the number N of the through holes is an even number, the waveguide is provided with through slots, and the through slots are provided at the N/2 th through hole and the N/2+1 th through hole along the light transmission direction. Between them, it is used to connect the N/2 th through hole with the N/2+1 th through hole.
由此，本发明的光调制器通过在波导上打孔，打破了波导的完整性，只有满足共振条件的光才能透射过波导，使得光调制器具有较高的调制深度。同时，由于黑磷具有优异的电学性能，及高热光系数，因此能耗低。Therefore, the optical modulator of the present invention breaks the integrity of the waveguide by perforating the waveguide, and only the light that meets the resonance condition can be transmitted through the waveguide, so that the optical modulator has a higher modulation depth. At the same time, because black phosphor has excellent electrical properties and high thermo-optical coefficient, it has low energy consumption.
附图说明Description of the drawings
为更清楚地阐述本发明的构造特征和功效，下面结合附图与具体实施例来对其进行详细说明。In order to more clearly illustrate the structural features and effects of the present invention, the following describes it in detail with reference to the accompanying drawings and specific embodiments.
图1是本发明实施例光调制器的部分剖切结构示意图。FIG. 1 is a schematic diagram of a partially cut-away structure of an optical modulator according to an embodiment of the present invention.
图2是本发明实施例光调制器的剖视图。Fig. 2 is a cross-sectional view of an optical modulator according to an embodiment of the present invention.
图3是本发明一实施例的光调制器的透视俯视图。Fig. 3 is a perspective top view of a light modulator according to an embodiment of the present invention.
图4是本发明又一实施例的光调制器的透视俯视图。Fig. 4 is a perspective top view of a light modulator according to another embodiment of the present invention.
图5是本发明一实施例的不同温度下光调制器的透射率曲线图。Fig. 5 is a graph showing the transmittance of the light modulator at different temperatures according to an embodiment of the present invention.
图6是图5实施例的不同温度下的电场强度分布图。Fig. 6 is a distribution diagram of electric field intensity at different temperatures in the embodiment of Fig. 5.
图7是本发明又一实施例的不同温度下光调制器的透射率曲线图。Fig. 7 is a graph showing the transmittance of the light modulator at different temperatures according to another embodiment of the present invention.
图8是图7实施例的不同温度下的电场强度分布图。Fig. 8 is a distribution diagram of electric field intensity at different temperatures in the embodiment of Fig. 7.
具体实施方式Detailed ways
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都应属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.
光调制器，用于控制光的强度，其分为电光、热光、声光、全光等。Light modulators are used to control the intensity of light. They are divided into electro-optical, thermo-optical, acousto-optical, and all-optical.
电光调制器是通过电压或电场的变化最终调控输出光的折射率、吸收率、振幅或相位的器件，它在损耗、功耗、速度、集成性等方面都优于其他类型的调制器。在整体光通信的光发射、传输、接收过程中，光调制器被用于控制光的强度，其作用是非常重要的。The electro-optical modulator is a device that ultimately regulates the refractive index, absorptivity, amplitude, or phase of the output light through changes in voltage or electric field. It is superior to other types of modulators in terms of loss, power consumption, speed, and integration. In the light emission, transmission, and reception process of the overall optical communication, the light modulator is used to control the intensity of light, and its role is very important.
波导(WAVEGUIDE)，指用来定向引导电磁波的结构。通常，波导专指各种形状的空心金属波导管和表面波波导，前者将被传输的电磁波完全限制在金属管内，又称封闭波导；后者将引导的电磁波约束在波导结构的周围，又称开波导。Waveguide (WAVEGUIDE) refers to the structure used to direct and guide electromagnetic waves. Generally, waveguide refers to hollow metal waveguides and surface wave waveguides of various shapes. The former completely confines the transmitted electromagnetic waves in the metal tube, which is also called closed waveguide; the latter confines the guided electromagnetic waves around the waveguide structure, also called Open the waveguide.
请参见图1和图2，本发明实施例的光调制器100用于对光的强度进行调制，其包括衬底10、第一电极31、第二电极32、波导70及致热层90。第一电极31、第二电极32和波导70间隔设置在衬底10的同一表面上。致热层90的一端连接第一电极31，另一端连接第二电极32。波导70沿光传输方向(如图1箭头B所示)设有依次排列的通孔71。致热层90至少覆盖通孔71。致热层90用于将外加电场的电能转化为热能，使致热层90及波导70温度上升，改变波导70与致热层90、或波导70的光折射率，从而使得透射过波导70的光的强度发生变化，实现对光透射谱的调控。1 and 2, the light modulator 100 according to the embodiment of the present invention is used to modulate the intensity of light, and it includes a substrate 10, a first electrode 31, a second electrode 32, a waveguide 70 and a heating layer 90. The first electrode 31, the second electrode 32, and the waveguide 70 are arranged on the same surface of the substrate 10 at intervals. One end of the heating layer 90 is connected to the first electrode 31, and the other end is connected to the second electrode 32. The waveguide 70 is provided with through holes 71 arranged in sequence along the light transmission direction (as shown by arrow B in FIG. 1). The heating layer 90 covers at least the through hole 71. The heating layer 90 is used to convert the electric energy of the applied electric field into heat energy, so that the temperature of the heating layer 90 and the waveguide 70 rises, and the refractive index of the waveguide 70 and the heating layer 90, or the waveguide 70 is changed, so that the light transmitted through the waveguide 70 The intensity of the light changes to realize the regulation of the light transmission spectrum.
由于不同温度下，波导70和致热层90的折射率不同。本发明的光调制器100利用外加电场使致热层90发热，使波导70和致热层90的温度上升，从而改变波导70或波导70和致热层90光的折射率，使得透射过波导70的光的强度发生变化，从而实现对透射谱的调控。另一方面通过通孔71对波导70的完整性进行破坏，电磁波在波导70中的传输将受到影响，只有满足共振条件频率的电磁波能够传输，共振条件受到材料折射率，通孔71大小和相对位置分布的影响。Due to different temperatures, the refractive index of the waveguide 70 and the heating layer 90 are different. The optical modulator 100 of the present invention utilizes an external electric field to heat the heating layer 90, which causes the temperature of the waveguide 70 and the heating layer 90 to rise, thereby changing the refractive index of the light from the waveguide 70 or the waveguide 70 and the heating layer 90 so as to transmit through the waveguide. The intensity of the light at 70 is changed, so as to realize the regulation of the transmission spectrum. On the other hand, the integrity of the waveguide 70 is destroyed by the through hole 71, and the transmission of electromagnetic waves in the waveguide 70 will be affected. Only the electromagnetic wave that meets the resonance condition frequency can be transmitted. The resonance condition is affected by the refractive index of the material, the size and relative The influence of location distribution.
本发明的光调制器100通过在波导70上打孔，打破了波导70的完整性，只有满足共振条件的光才能透射过波导70，使得光调制器具有较高的调制深度。The optical modulator 100 of the present invention breaks the integrity of the waveguide 70 by perforating the waveguide 70, and only light that meets the resonance condition can be transmitted through the waveguide 70, so that the optical modulator has a higher modulation depth.
在一些实施例中，本发明的光调制器100还包括第一保护件51、第二保护件52及第三保护件53。第一电极31、第一保护件51、波导70、第二保护件52、第二电极32沿第一方向(如图1箭头A所示)依次排列；第一方向与光传输方向垂直；所述第三保护件53设在所述致热层90与波导70相对的表面上，并将第一电极31、第二电极32、第一保护件51、第二保护件52、波导70及致热层90封装在所述第三保护件53与所述衬底10围成的空间内。In some embodiments, the light modulator 100 of the present invention further includes a first protective member 51, a second protective member 52 and a third protective member 53. The first electrode 31, the first protective member 51, the waveguide 70, the second protective member 52, and the second electrode 32 are arranged in sequence along the first direction (shown by arrow A in Fig. 1); the first direction is perpendicular to the light transmission direction; The third protective member 53 is provided on the surface of the heating layer 90 opposite to the waveguide 70, and combines the first electrode 31, the second electrode 32, the first protective member 51, the second protective member 52, the waveguide 70, and the waveguide 70. The thermal layer 90 is encapsulated in the space enclosed by the third protective member 53 and the substrate 10.
在一些实施例中，第一保护件51及第二保护件52均由绝缘材料制得，用于支撑致热层90，使第一电极31和第二电极32与波导70绝缘。第三保护件53为绝缘材料制得，用 于防止波导70、致热层90、第一电极31和第二电极32被氧化，并使第一电极31和第二电极32与外界绝缘。In some embodiments, both the first protective member 51 and the second protective member 52 are made of insulating materials and used to support the heating layer 90 to insulate the first electrode 31 and the second electrode 32 from the waveguide 70. The third protective member 53 is made of an insulating material, and is used to prevent the waveguide 70, the heating layer 90, the first electrode 31 and the second electrode 32 from being oxidized, and to insulate the first electrode 31 and the second electrode 32 from the outside.
请参见图2，在一些实施例中，第一电极31和波导70之间的间隔距离与第二电极32和波导70之间的间隔距离相等。第一电极31与波导70的距离为100nm-1000nm。第二电极32与波导70的距离为100nm-1000nm。当第一电极31和第二电极32与波导70的距离太近时，会影响光场传输，太远则会增加器件面积，不利于集成，同时增加调制所需的电压，增加能耗。在一些实施例中，衬底10为绝缘材料，用于支撑波导70、第一电极31和第二电极32。在本发明的实施例中，衬底10为二氧化硅衬底。衬底指的是具有特定晶面和适当电学，光学和机械特性的用于生长外延层的洁净单晶薄片。Referring to FIG. 2, in some embodiments, the separation distance between the first electrode 31 and the waveguide 70 is equal to the separation distance between the second electrode 32 and the waveguide 70. The distance between the first electrode 31 and the waveguide 70 is 100 nm-1000 nm. The distance between the second electrode 32 and the waveguide 70 is 100 nm-1000 nm. When the distance between the first electrode 31 and the second electrode 32 and the waveguide 70 is too close, the optical field transmission will be affected, and too far will increase the device area, which is not conducive to integration, and at the same time increase the voltage required for modulation and increase energy consumption. In some embodiments, the substrate 10 is an insulating material for supporting the waveguide 70, the first electrode 31 and the second electrode 32. In the embodiment of the present invention, the substrate 10 is a silicon dioxide substrate. The substrate refers to a clean single crystal sheet with a specific crystal plane and appropriate electrical, optical, and mechanical properties for growing an epitaxial layer.
在一些实施例中，第一电极31和第二电极32为导电性能良好的金属材料，优选为金、银、铜、铂或铝。第一电极31和第二电极32可通过磁控溅射等方法制备。In some embodiments, the first electrode 31 and the second electrode 32 are metal materials with good electrical conductivity, preferably gold, silver, copper, platinum or aluminum. The first electrode 31 and the second electrode 32 can be prepared by a method such as magnetron sputtering.
在一些实施例中，波导70为半导体材料，优选地，为硅或者三五族半导材料。可以通过光刻或氧化制得。In some embodiments, the waveguide 70 is a semiconductor material, preferably silicon or a group III-V semiconducting material. It can be made by photolithography or oxidation.
波导70的宽度为300nm-800nm。通常，波导70中传输的是单模光，当波导70宽度大于800nm时，变成了多模波导，不再适用本发明的光调制器100。当波导70宽度小于300nm时，则波导70的截止频率会升高，即可传输的最大波长变短。更优选地，当波导70的宽度为450-500nm时，光调制器100的调制深度最高。The width of the waveguide 70 is 300 nm-800 nm. Generally, single-mode light is transmitted in the waveguide 70. When the width of the waveguide 70 is greater than 800 nm, it becomes a multi-mode waveguide, and the optical modulator 100 of the present invention is no longer applicable. When the width of the waveguide 70 is less than 300 nm, the cut-off frequency of the waveguide 70 will increase, that is, the maximum transmission wavelength will be shortened. More preferably, when the width of the waveguide 70 is 450-500 nm, the modulation depth of the light modulator 100 is the highest.
波导70在光传输方向上的长度为1μm-100μm。当波导在光传输方向上的长度小于1μm时，光传输的距离变短，降低消光比和调制深度。同时，刻蚀的孔的数量变少，降低调制深度。大于100μm时，则光调制器100的体积过于庞大，不急于大规模的片上集成，增加光调制器100的***损耗和能耗。The length of the waveguide 70 in the light transmission direction is 1 μm-100 μm. When the length of the waveguide in the light transmission direction is less than 1 μm, the light transmission distance becomes shorter, reducing the extinction ratio and modulation depth. At the same time, the number of etched holes decreases, reducing the modulation depth. When it is greater than 100 μm, the volume of the optical modulator 100 is too large, and there is no rush for large-scale on-chip integration, which increases the insertion loss and energy consumption of the optical modulator 100.
在一些实施例中，致热层90为黑磷层、石墨烯层、过渡金属氮化物或碳化物层或金属材料层。致热层90的厚度为0.6-20nm。致热层90用于将外加电场的电能转化为热能，使致热层90及波导70的温度上升。进而改变波导70或波导70于致热层90的光折射率。In some embodiments, the heating layer 90 is a black phosphorous layer, a graphene layer, a transition metal nitride or carbide layer, or a metal material layer. The thickness of the heating layer 90 is 0.6-20 nm. The heating layer 90 is used to convert the electric energy of the applied electric field into heat energy, so as to increase the temperature of the heating layer 90 and the waveguide 70. Furthermore, the optical refractive index of the waveguide 70 or the waveguide 70 on the heating layer 90 is changed.
由于黑磷、石墨烯和过渡金属氮化物或碳化物层在不同的温度下具有不同的光折射率，因此，当致热层90为黑磷层或石墨烯层时，外加电场后，致热层90和波导70的光折射率均会发生变化，使得致热层90与波导70之间产生倏逝场相互作用，进一步提高了光调制器的调制深度。Since black phosphorous, graphene, and transition metal nitride or carbide layers have different optical refractive indices at different temperatures, when the heating layer 90 is a black phosphorous layer or a graphene layer, after an electric field is applied, the heating The optical refractive index of the layer 90 and the waveguide 70 will both change, so that an evanescent field interaction occurs between the heating layer 90 and the waveguide 70, which further improves the modulation depth of the optical modulator.
当致热层90为黑磷层、石墨烯层和过渡金属氮化物或碳化物层时，致热层的层数为1-30层。当致热层90层数较少时，黑磷、石墨烯或过渡金属氮化物或碳化物的带隙较大，对光本征吸收比较少，会降低光调制器100的损耗。增加致热层90的层数，则会增加光调制器的损耗，同时会影响黑磷、石墨烯或过渡金属氮化物或碳化物的载流子数量和电导率，随着层数增加，电导率增加，可以更好的将电能转换为热能。致热层90可以通过机械剥离的或液相剥离等方法进行制备。When the heating layer 90 is a black phosphorous layer, a graphene layer, and a transition metal nitride or carbide layer, the number of heating layers is 1-30. When the number of the heating layer 90 is small, the band gap of black phosphorus, graphene, or transition metal nitride or carbide is large, and the intrinsic absorption of light is relatively small, which will reduce the loss of the optical modulator 100. Increasing the number of layers of the heating layer 90 will increase the loss of the light modulator, and will also affect the number of carriers and conductivity of black phosphorus, graphene, or transition metal nitrides or carbides. As the number of layers increases, the conductivity The increase in rate can better convert electrical energy into heat. The heating layer 90 can be prepared by a method such as mechanical peeling or liquid phase peeling.
当致热层90为黑磷层时，其在空气中容易被氧化，通过化学修饰等方法提高黑磷的稳定性。When the heating layer 90 is a black phosphorous layer, it is easily oxidized in the air, and the stability of the black phosphorous is improved by methods such as chemical modification.
在一些实施例中，当致热层90为金属材料层时，在所述致热层90靠近波导70的一侧还设有绝缘隔离层(图未示)，所述绝缘隔离层包括Al 2O 3或SiO 2。绝缘隔离层的厚度为5-10nm。当致热层为金属材料层时，由于金属对的吸收，会使光调制器的损耗增加，调制深度减低，在致热层90和波导70之间设置绝缘隔离层可以降低损耗。 In some embodiments, when the heating layer 90 is a metal material layer, an insulating isolation layer (not shown) is further provided on the side of the heating layer 90 close to the waveguide 70, and the insulating isolation layer includes Al 2 O 3 or SiO 2 . The thickness of the insulating isolation layer is 5-10 nm. When the heating layer is a metal material layer, due to the absorption of the metal pair, the loss of the optical modulator is increased and the modulation depth is reduced. An insulating isolation layer is provided between the heating layer 90 and the waveguide 70 to reduce the loss.
在一些实施例中，通孔71可以填充与波导70折射率不同的物质，具体地，可以为空气、绝缘材料、金属材料或半导体材料。填充时，可以采用化学气相沉积或者磁控溅射等方法。通过在通孔71中进行填充，从而影响光场局域效果和共振频率。提升光调制器的调制深度、降低能耗。In some embodiments, the through hole 71 may be filled with a substance with a refractive index different from that of the waveguide 70, specifically, it may be air, an insulating material, a metal material, or a semiconductor material. For filling, methods such as chemical vapor deposition or magnetron sputtering can be used. By filling the through hole 71, the local effect of the light field and the resonance frequency are affected. Improve the modulation depth of the optical modulator and reduce energy consumption.
在一些实施例中，通孔71为圆孔、椭圆或多边形孔。当通孔71为圆孔时，可以增加光调制器的调制深度。In some embodiments, the through hole 71 is a round hole, an ellipse or a polygonal hole. When the through hole 71 is a round hole, the modulation depth of the light modulator can be increased.
可选择地，通孔71的数量为至少一个。至少一个通孔71沿着光传输方向排列。通孔71的半径为10nm-400nm。相邻两个通孔71之间的距离为10nm-1000nm。通孔71主要起到破环波导完整性，引起共振的作用。当半径太小无法引起共振，半径太大时则会使得波导的宽度也会相应的变宽，增加调制器的能耗和损耗。随着孔的半径增加，调制器的损耗会增加，同时调制深度和能耗也会增加。Optionally, the number of through holes 71 is at least one. At least one through hole 71 is arranged along the light transmission direction. The radius of the through hole 71 is 10 nm-400 nm. The distance between two adjacent through holes 71 is 10 nm-1000 nm. The through hole 71 mainly serves to break the integrity of the loop waveguide and cause resonance. When the radius is too small, resonance cannot be caused, and when the radius is too large, the width of the waveguide will be correspondingly widened, increasing the energy consumption and loss of the modulator. As the radius of the hole increases, the loss of the modulator will increase, and the modulation depth and energy consumption will also increase.
在一些实施例中，通孔71的大小相同，沿光传输方向等距离排列。In some embodiments, the through holes 71 have the same size and are arranged at equal distances along the light transmission direction.
请参见图3，在一些实施例中，通孔71为圆孔，通孔71的半径沿着光传输方向先等差递减，再等差递增，呈对称排列；即假设通孔71的数量为N大于等于3，则第1个通孔71的半径与第N个通孔71的半径相等，第2个通孔71的半径与第N-1个通孔71的半径相等，以此类推。Referring to FIG. 3, in some embodiments, the through holes 71 are circular holes, and the radius of the through holes 71 along the light transmission direction first decreases with equal difference, and then increases with the same difference, in a symmetrical arrangement; that is, assume that the number of through holes 71 is If N is greater than or equal to 3, the radius of the first through hole 71 is equal to the radius of the N th through hole 71, the radius of the second through hole 71 is equal to the radius of the N-1 th through hole 71, and so on.
更具体地，当N＝2M，M位大于等于2的整数，即通孔71为偶数时，沿光传输方向，第1个通孔71到第M个通孔71的半径等差递减，等差差值为Δr 1；第M+1个通孔到第N个通孔的半径等差递增，等差差值为Δr 2，|Δr 1|与Δr 2相等。当N＝2M-1，M为大于等于2的整数，即通孔71为奇数时，沿光传输方向，第1个通孔71到第M个通孔71的半径等差递减，等差差值为Δr 1；第M个通孔到第N个通孔的半径等差递增，等差差值为Δr 2，|Δr 1|与Δr 2相等。 More specifically, when N=2M and M bits are an integer greater than or equal to 2, that is, when the through hole 71 is an even number, along the light transmission direction, the radius of the first through hole 71 to the M-th through hole 71 decreases, etc. The difference is Δr 1 ; the radius of the M+1 th through hole to the N th through hole increases in arithmetic, and the arithmetic difference is Δr 2 , and |Δr 1 | is equal to Δr 2. When N=2M-1, M is an integer greater than or equal to 2, that is, when the through-hole 71 is an odd number, along the light transmission direction, the radius of the first through-hole 71 to the M-th through-hole 71 is reduced by the same difference. The value is Δr 1 ; the arithmetic difference of the radius from the Mth through hole to the Nth through hole increases, and the arithmetic difference is Δr 2 , and |Δr 1 | is equal to Δr 2.
在一些实施例中，|Δr 1|和Δr 2为0-100nm，更优选地，0-30nm。|Δr 1|和Δr 2值越大场局域效果越好，调试深度越大，但|Δr 1|和Δr 2太大会造成部分同孔半径过大，增加调制器的损耗。 In some embodiments, |Δr 1 | and Δr 2 are 0-100 nm, more preferably, 0-30 nm. The larger the |Δr 1 | and Δr 2 values, the better the field local effect and the greater the debugging depth, but too large |Δr 1 | and Δr 2 will cause part of the same hole radius to be too large and increase the loss of the modulator.
在一具体实施例中，通孔71的个数N为8个，其沿着光传输方向的通孔71的半径依次为300nm、270nm、250nm、220nm、220nm、250nm、270nm、300nm，在另一具体实施例中，通孔71的个数为7个，其沿着光传输方向的通孔71的半径依次为320nm、280nm、250nm、210nm、250nm、280nm、320nm。In a specific embodiment, the number N of the through holes 71 is 8, and the radii of the through holes 71 along the light transmission direction are 300nm, 270nm, 250nm, 220nm, 220nm, 250nm, 270nm, 300nm in order. In a specific embodiment, the number of through holes 71 is 7, and the radius of the through holes 71 along the light transmission direction are 320 nm, 280 nm, 250 nm, 210 nm, 250 nm, 280 nm, and 320 nm in order.
在一些实施例中，相邻两通孔71之间的距离沿着光传输方向先逐渐递减，再逐渐递增，呈对称排列。In some embodiments, the distance between two adjacent through holes 71 first gradually decreases along the light transmission direction, and then gradually increases, in a symmetrical arrangement.
在一些实施例中，通孔71的数量N大于等于5，沿光传输方向第i+1孔到i孔的距离为d (i+1)i，i＝1,2,3……N。 In some embodiments, the number N of the through holes 71 is greater than or equal to 5, and the distance from the i+1-th hole to the i-hole along the light transmission direction is d (i+1)i , i=1, 2, 3...N.
当通孔71的数量为N＝2M，M为大于等于3的整数时，则第1通孔到第M通孔满足关系式d (i+1)(i+2)-d (i+1)i为等差递减数列，其中i＝1,2,3……M，等差差值为Δd 1；第M+1通孔到第N通孔满足关系式d (i+1)(i+2)-d (i+1)i为等差递增数列，其中i＝M+1,M+2……N，等差差值为Δd 2；|Δd 1|与Δd 2相等。 When the number of through holes 71 is N=2M, and M is an integer greater than or equal to 3, then the first through hole to the Mth through hole satisfy the relation d (i+1)(i+2) -d (i+1 )i is an arithmetic decreasing sequence, where i=1, 2, 3……M, the arithmetic difference is Δd 1 ; the M+1 th through hole to the N th through hole satisfy the relation d (i+1)(i +2) -d (i+1)i is an arithmetic increasing sequence, where i=M+1, M+2...N, the arithmetic difference is Δd 2 ; |Δd 1 | is equal to Δd 2.
当通孔71的数量为N＝2M-1，M为大于等于3的整数时，则第1通孔到第M通孔满足关系式d (i+1)(i+2)-d (i+1)i为等差递减数列，其中i＝1,2,3……M，等差差值为Δd 1；第M+1通孔到第N通孔满足关系式d (i+1)(i+2)-d (i+1)i为等差递增数列，其中i＝M,M+1,M+2……N，等差差值为Δd 2；|Δd 1|与Δd 2相等。 When the number of through holes 71 is N=2M-1, and M is an integer greater than or equal to 3, the first through hole to the Mth through hole satisfy the relationship d (i+1)(i+2) -d (i +1) i is the arithmetic decreasing sequence, where i=1, 2, 3……M, the arithmetic difference is Δd 1 ; the M+1 th through hole to the N th through hole satisfy the relation d (i+1) (i+2) -d (i+1)i is an arithmetic increasing sequence, where i=M, M+1, M+2……N, the arithmetic value is Δd 2 ; |Δd 1 | and Δd 2 equal.
在一些实施例中，|Δd 1|与Δd 2为0-300nm。|Δd 1|与Δd 2的值越小，场局域特性越好，调制深度越高，但是损耗越大。 In some embodiments, |Δd 1 | and Δd 2 are 0-300 nm. The smaller the values of |Δd 1 | and Δd 2 are, the better the field local characteristics, the higher the modulation depth, but the greater the loss.
在一具体实施例中，N为10，M为5，则沿着光传输方向各个通孔71之间的间距d 12，d 23，d 34，d 45，d 67，d 78，d 89及分别为220nm、140nm、80nm、40nm、40nm、80nm、140nm、220nm，第1个通孔到第5个通孔满足d 12-d 23＝80nm，d 23-d 34＝60nm，d 34-d 45＝40nm为等差递减数列；6个通孔到第10个通孔满足d 78-d 67＝40nm，d 89-d 78＝60nm，d 910-d 89＝80nm为等差递增数列。 In a specific embodiment, N is 10 and M is 5, and the distances d 12 , d 23 , d 34 , d 45 , d 67 , d 78 , d 89 and Respectively 220nm, 140nm, 80nm, 40nm, 40nm, 80nm, 140nm, 220nm, the first through hole to the fifth through hole meet d 12 -d 23 =80nm, d 23 -d 34 =60nm, d 34 -d 45 = 40 nm is an arithmetic decreasing sequence; 6 through holes to the 10th through hole satisfying d 78 -d 67 =40 nm, d 89- d 78 = 60 nm, and d 910- d 89 = 80 nm are an arithmetic increasing sequence.
在另一具体实施例中，N为11，M为5，则沿着光传输方向各个通孔71之间的间距d 12，d 23，d 34，d 45，d 56，d 67，d 78，d 89、d 910及d 1011分别为220nm、140nm、80nm、40nm、20nm、40nm、80nm、140nm、220nm，第1个通孔到第6个通孔满足d 12-d 23＝80nm，d 23-d 34＝60nm，d 34-d 45＝40nm，d 45-d 56＝20nm为等差递减数列；6个通孔到第11个通孔满足d 67-d 56＝20nm，d 78-d 67＝40nm，d 89-d 78＝60nm，d 1011-d 89＝80nm为等差递增数列。|Δd 1|与Δd 2均为20nm。 In another specific embodiment, N is 11 and M is 5, then the distances d 12 , d 23 , d 34 , d 45 , d 56 , d 67 , d 78 between the through holes 71 along the light transmission direction , D 89 , d 910 and d 1011 are respectively 220nm, 140nm, 80nm, 40nm, 20nm, 40nm, 80nm, 140nm, 220nm, the first through hole to the sixth through hole meet d 12 -d 23 =80nm, d 23 -d 34 =60nm, d 34 -d 45 =40nm, d 45 -d 56 =20nm is an arithmetic decreasing sequence; 6 through holes to 11th through holes satisfy d 67 -d 56 =20nm, d 78- d 67 =40 nm, d 89- d 78 = 60 nm, and d 1011- d 89 = 80 nm are an arithmetic increasing number sequence. |Δd 1 | and Δd 2 are both 20 nm.
本发明的光调制器100通过对通孔71半径和距离的设计，使得波导70具有更强的共振效果。因为最中间的孔半径小，距离近，使光调制器剧有更强的光场局域效果，共振更强，从而可以实现更高的调制深度。同时，不均匀分布的通孔可以使得共振峰更窄，也就是透射谱的峰的半高宽更小，这样在相同的电压下可以实现更高的调制深度，降低能耗。In the light modulator 100 of the present invention, by designing the radius and distance of the through hole 71, the waveguide 70 has a stronger resonance effect. Because the radius of the middle hole is small and the distance is short, the light modulator has a stronger light field local effect and stronger resonance, which can achieve a higher modulation depth. At the same time, the unevenly distributed through holes can make the resonance peak narrower, that is, the half-height width of the peak of the transmission spectrum is smaller, so that a higher modulation depth can be achieved under the same voltage and energy consumption can be reduced.
请参见图4，在一些实施例中，当通孔71的数量N为偶数时，波导70上设有通槽73，通槽73设在沿光传输方向第N/2个通孔71和第N/2+1个通孔71之间，用于将第N/2个通孔71与第N/2+1个通孔71连通。通槽73在第一方向上的宽度为10-100nm。通槽73越小场局域效果越好，相应的调制深度会增加，能耗降低，但是越小加工难度越大，因此不能过小。同时太大会增加调制器的***损耗，降低调制器的调制深度。Referring to FIG. 4, in some embodiments, when the number N of through holes 71 is an even number, the waveguide 70 is provided with a through groove 73, and the through groove 73 is provided at the N/2 th through hole 71 and the first through hole 71 along the light transmission direction. The N/2+1 through holes 71 are used to connect the N/2 th through hole 71 and the N/2+1 th through hole 71. The width of the through groove 73 in the first direction is 10-100 nm. The smaller the through slot 73 is, the better the field local effect is, the corresponding modulation depth will increase, and the energy consumption will be reduced. At the same time, too large will increase the insertion loss of the modulator and reduce the modulation depth of the modulator.
在本发明的实施例中，通槽73为矩形，矩形通槽73使得本发明的光调制器加工更加简便。通槽73有利于提高光调制器100的光场局域效果，能更好的提高光调制器的调制深度。In the embodiment of the present invention, the through slot 73 is rectangular, and the rectangular through slot 73 makes the processing of the light modulator of the present invention easier. The through slot 73 is beneficial to improve the light field local effect of the light modulator 100, and can better improve the modulation depth of the light modulator.
在一些实施例中，第一电极31、第二电极32、第一保护件51、第二保护件52、波导70的高度相同。这样可以使得制备工艺更加简化。In some embodiments, the heights of the first electrode 31, the second electrode 32, the first protective member 51, the second protective member 52, and the waveguide 70 are the same. This can simplify the preparation process.
以下通过具体实施例对本发明的光调制器做更详细的描述。The light modulator of the present invention will be described in more detail below through specific embodiments.
实施例1Example 1
本实施例的基于黑磷的光调制器100包括衬底10、第一电极31、第二电极32、第一保护件51、第二保护件52、波导70、致热层90及第三保护件53。第一电极31、第一保护件51、波导70、第二保护件53、第二电极31沿第一方向(如图1箭头A所示)依次排列，并设置在衬底10上。波导70上设有沿光传输方向(如图1箭头B所示)排列的通孔71。第一方向与光传输方向垂直。致热层90至少部分覆盖第一电极31及第二电极32，并完全覆盖通孔71；第三保护件53形成于致热层90上，并完全覆盖第一电极31、第二电极32、第一保护件51、第二保护件52、波导70、致热层90。The light modulator 100 based on black phosphorous in this embodiment includes a substrate 10, a first electrode 31, a second electrode 32, a first protection member 51, a second protection member 52, a waveguide 70, a heating layer 90, and a third protection. Piece 53. The first electrode 31, the first protection member 51, the waveguide 70, the second protection member 53, and the second electrode 31 are arranged in a first direction (as shown by arrow A in FIG. 1) and arranged on the substrate 10. The waveguide 70 is provided with through holes 71 arranged along the light transmission direction (shown by arrow B in FIG. 1). The first direction is perpendicular to the light transmission direction. The heating layer 90 at least partially covers the first electrode 31 and the second electrode 32, and completely covers the through hole 71; the third protection member 53 is formed on the heating layer 90 and completely covers the first electrode 31, the second electrode 32, The first protective member 51, the second protective member 52, the waveguide 70, and the heating layer 90.
在本实施例中，衬底10由二氧化硅制得。波导70为由硅制得，波导70的宽度为500nm，厚度为220nm。通孔71中填充有空气。第一电极31和第二电极由金制得。致热层90为单层。第一保护件51、第二保护件52和第三保护件53由二氧化硅制得。通孔71为圆孔，通孔71的数量为10，在第5个通孔71和第6个通孔之间设有矩形通槽73，矩形通槽73在第一方向的长度为50nm，光传输方向的长度为530nm。10个通孔71沿光传输方向的半径r依次为139.4nm、130.9nm、122.4nm、113.9nm、105.4nm、105.4nm、113.9nm、122.4nm、130.9nm、139.4nm。10个通孔71沿光传输方向的相邻两个孔的距离分别为：385nm、360nm、335nm、310nm、530nm、310nm、335nm、360nm、385nm。In this embodiment, the substrate 10 is made of silicon dioxide. The waveguide 70 is made of silicon, and the waveguide 70 has a width of 500 nm and a thickness of 220 nm. The through hole 71 is filled with air. The first electrode 31 and the second electrode are made of gold. The heating layer 90 is a single layer. The first protective member 51, the second protective member 52 and the third protective member 53 are made of silica. The through holes 71 are round holes, the number of through holes 71 is 10, a rectangular through groove 73 is provided between the fifth through hole 71 and the sixth through hole, and the length of the rectangular through groove 73 in the first direction is 50 nm, The length of the light transmission direction is 530 nm. The radius r of the ten through holes 71 along the light transmission direction are 139.4 nm, 130.9 nm, 122.4 nm, 113.9 nm, 105.4 nm, 105.4 nm, 113.9 nm, 122.4 nm, 130.9 nm, and 139.4 nm in order. The distances between two adjacent holes of the ten through holes 71 along the light transmission direction are respectively: 385 nm, 360 nm, 335 nm, 310 nm, 530 nm, 310 nm, 335 nm, 360 nm, and 385 nm.
本实施例的光调制器100通过外加电场后，对300K和400K两个不同温度下光调制器的透射率及波导70中磁场的强度分布进行测试，利用时域有限差分方法模拟软件LumericalSuites计算套件，仿真光场在调制中的传输，外加电场施加在电极上，致热层的光学参数采用Drude模型计算得到，其余材料的光学参数采用软件自带参数，模拟精度设置为最高。在波导厚度方向设置平面场监控器，在波导的入射面采用模式光光源，出射面采用能量监控器，用于保存不同情况下的光场分布和透射谱，测试结果如图5和图6所示。图5为300K和400K下光调制器的透射率曲线图，由图5可以看出当温度发生变化时，透射曲线发生了明显的移动。温度为400K时，在1550nm波长处相应的调制深度为18.32％，经过优化调制速率可达千赫兹。图6为不同温度下的电场强度分布图，由图6可以看出来不同温度下相同的波长具有不同的共振模式和共振强度。After the optical modulator 100 of this embodiment passes an external electric field, the transmittance of the optical modulator and the intensity distribution of the magnetic field in the waveguide 70 at two different temperatures of 300K and 400K are tested, and the finite difference time domain method is used to simulate the software LumericalSuites calculation suite , To simulate the transmission of the light field in the modulation, an external electric field is applied to the electrode, the optical parameters of the heating layer are calculated using the Drude model, and the optical parameters of the remaining materials use the software's own parameters, and the simulation accuracy is set to the highest. A plane field monitor is set in the thickness direction of the waveguide, a mode light source is used on the incident surface of the waveguide, and an energy monitor is used on the exit surface to save the light field distribution and transmission spectrum under different conditions. The test results are shown in Figure 5 and Figure 6. Show. Figure 5 shows the transmittance curves of the light modulator at 300K and 400K. It can be seen from Figure 5 that when the temperature changes, the transmittance curve shifts significantly. When the temperature is 400K, the corresponding modulation depth at 1550nm wavelength is 18.32%, and the optimized modulation rate can reach kilohertz. Fig. 6 is a distribution diagram of electric field intensity at different temperatures. It can be seen from Fig. 6 that the same wavelength at different temperatures has different resonance modes and resonance intensities.
实施例2Example 2
本实施例的基于黑磷的光调制器100包括衬底10、第一电极31、第二电极32、第一保护件51、第二保护件52、波导70、致热层90及第三保护件53。第一电极31、第一保护件51、波导70、第二保护件53、第二电极31沿第一方向(如图1箭头A所示)依次排列，并设置在衬底10上。波导70上设有沿光传输方向(如图1箭头B所示)排列的通孔71。第一方向与光传输方向垂直。致热层90至少部分覆盖第一电极31及第二电极32，并完全覆盖通孔71；第三保护件53形成于致热层90上，并完全覆盖第一电极31、第二电极32、第一保护件51、第二保护件52、波导70、致热层90。The light modulator 100 based on black phosphorous in this embodiment includes a substrate 10, a first electrode 31, a second electrode 32, a first protection member 51, a second protection member 52, a waveguide 70, a heating layer 90, and a third protection. Piece 53. The first electrode 31, the first protection member 51, the waveguide 70, the second protection member 53, and the second electrode 31 are arranged in a first direction (as shown by arrow A in FIG. 1) and arranged on the substrate 10. The waveguide 70 is provided with through holes 71 arranged along the light transmission direction (shown by arrow B in FIG. 1). The first direction is perpendicular to the light transmission direction. The heating layer 90 at least partially covers the first electrode 31 and the second electrode 32, and completely covers the through hole 71; the third protection member 53 is formed on the heating layer 90 and completely covers the first electrode 31, the second electrode 32, The first protective member 51, the second protective member 52, the waveguide 70, and the heating layer 90.
在本实施例中，衬底10由二氧化硅制得。波导70为由硅制得，波导70的宽度为500nm，厚度为220nm。通孔71中填充金。第一电极31和第二电极由金制得。致热层90为单层。 第一保护件51、第二保护件52和第三保护件53由二氧化硅制得。通孔71为圆孔，通孔71的数量为10，半径为100nm。相邻两个通孔之间的间距为200nm。波导70长度为2μm。In this embodiment, the substrate 10 is made of silicon dioxide. The waveguide 70 is made of silicon, and the waveguide 70 has a width of 500 nm and a thickness of 220 nm. The through hole 71 is filled with gold. The first electrode 31 and the second electrode are made of gold. The heating layer 90 is a single layer. The first protective member 51, the second protective member 52 and the third protective member 53 are made of silica. The through holes 71 are round holes, the number of the through holes 71 is 10, and the radius is 100 nm. The spacing between two adjacent through holes is 200 nm. The length of the waveguide 70 is 2 μm.
调制器工作区域长度2μm，可实现较高的调制深度，其最大调制深度为11.78％。从图7中可以看出在不同温度下，透射谱发生移动，达到调制的目的，调制深度可达，速率可达到千赫兹。图8为不同温度下的光场分布，表明不同温度时，具有略微不同的共振模式，即温度对共振的模式具有一定的影响。The length of the modulator working area is 2μm, which can achieve a higher modulation depth, and its maximum modulation depth is 11.78%. It can be seen from Figure 7 that at different temperatures, the transmission spectrum moves to achieve the purpose of modulation, the depth of modulation can be reached, and the rate can reach kilohertz. Figure 8 shows the light field distribution at different temperatures, indicating that at different temperatures, there are slightly different resonance modes, that is, temperature has a certain influence on the resonance mode.
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易的想到各种等效的修改或替换，这些修改或替换都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以权利要求的保护范围为准。The above are only specific embodiments of the present invention, but the scope of protection of the present invention is not limited to this. Anyone familiar with the technical field can easily think of various equivalents within the technical scope disclosed in the present invention. Modifications or replacements, these modifications or replacements should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims (10)

  1. 一种光调制器，其特征在于，包括衬底、第一电极、第二电极、波导及致热层；所述第一电极、所述第二电极、所述波导间隔设置在所述衬底的同一表面上；所述致热层的一端连接所述第一电极，另一端连接所述第二电极；所述波导沿光传输方向设有依次排列的通孔；所述致热层至少覆盖所述通孔；所述致热层用于将外加电场的电能转化为热能，使致热层及波导温度上升，改变波导与致热层、或波导的光折射率，从而使得透射过波导的光的强度发生变化，实现对光透射谱的调控。An optical modulator, characterized by comprising a substrate, a first electrode, a second electrode, a waveguide, and a heating layer; the first electrode, the second electrode, and the waveguide are arranged on the substrate at intervals One end of the heating layer is connected to the first electrode, and the other end is connected to the second electrode; the waveguide is provided with through holes arranged in sequence along the light transmission direction; the heating layer covers at least The through hole; the heating layer is used to convert the electric energy of the applied electric field into thermal energy, so that the temperature of the heating layer and the waveguide rise, and the optical refractive index of the waveguide and the heating layer, or the waveguide is changed, so that the light transmitted through the waveguide The intensity of the light changes to realize the regulation of the light transmission spectrum.
  2. 根据权利要求1所述的光调制器，其特征在于，所述光调制器还包括第一保护件、第二保护件及第三保护件；所述第一电极、第一保护件、波导、第二保护件、第二电极沿第一方向依次排列；所述第一方向与光传输方向垂直；所述第三保护件设在所述致热层与波导相对的表面上，并将第一电极、第二电极、第一保护件、第二保护件、波导及致热层封装在所述第三保护件与所述衬底围成的空间内。The optical modulator according to claim 1, wherein the optical modulator further comprises a first protective member, a second protective member, and a third protective member; the first electrode, the first protective member, the waveguide, The second protective member and the second electrode are arranged in sequence along the first direction; the first direction is perpendicular to the light transmission direction; the third protective member is provided on the surface of the heating layer opposite to the waveguide, and the first The electrode, the second electrode, the first protective member, the second protective member, the waveguide and the heating layer are encapsulated in the space enclosed by the third protective member and the substrate.
  3. 根据权利要求1所述的光调制器，其特征在于，所述波导的宽度为300nm-800nm；长度为1μm-100μm。The light modulator according to claim 1, wherein the width of the waveguide is 300nm-800nm; and the length is 1μm-100μm.
  4. 根据权利要求1所述的光调制器，其特征在于，所述致热层为黑磷层、石墨烯层、过渡金属氮化物或碳化物层或金属材料层。The light modulator according to claim 1, wherein the heating layer is a black phosphorous layer, a graphene layer, a transition metal nitride or carbide layer, or a metal material layer.
  5. 根据权利要求1所述的光调制器，其特征在于，所述通孔为圆孔、椭圆或多边形孔。The light modulator according to claim 1, wherein the through hole is a round hole, an ellipse or a polygonal hole.
  6. 根据权利要求1所述的光调制器，其特征在于，所述通孔中填充与所述波导折射率不同的物质。The optical modulator according to claim 1, wherein the through hole is filled with a substance having a refractive index different from that of the waveguide.
  7. 根据权利要求5所述的光调制器，其特征在于，每个所述通孔的大小相等；所述通孔沿光传输方向等间距排列；The light modulator according to claim 5, wherein the size of each of the through holes is equal; the through holes are arranged at equal intervals along the light transmission direction;
    或者所述通孔的半径沿光传输方向先等差递减，再等差递增，呈对称排列；Or the radii of the through-holes first decrease in arithmetic along the light transmission direction, and then increase in arithmetic, in a symmetrical arrangement;
    或者相邻两通孔之间的距离沿光传输方向先逐渐递减，再逐渐递增，呈对称排列。Or the distance between two adjacent through holes gradually decreases along the light transmission direction, and then gradually increases, showing a symmetrical arrangement.
  8. 根据权利要求1所述的光调制器，其特征在于，所述通孔为圆孔，所述通孔的数量为N；The light modulator according to claim 1, wherein the through holes are round holes, and the number of the through holes is N;
    当N＝2M，M为大于等于2的整数时，沿光传输方向，第1个通孔到第M个通孔的半径等差递减，等差差值为Δr 1；第M+1个通孔到第N个通孔的半径等差递增，等差差值为Δr 2； When N=2M and M is an integer greater than or equal to 2, along the light transmission direction, the radius of the first through-hole to the M-th through-hole is reduced by the same difference, and the arithmetic difference is Δr 1 ; The arithmetic difference of the radius from the hole to the Nth through hole increases, and the arithmetic difference is Δr 2 ;
    当N＝2M+1，M为大于等于2的整数，沿光传输方向，第1个通孔到第M+1个通孔的半径等差递减，等差差值为Δr 1，第M+1个通孔到第N个通孔的半径等差递增，等差差值为Δr 2； When N=2M+1, M is an integer greater than or equal to 2, along the light transmission direction, the radius of the first through hole to the M+1 through hole is reduced by the same difference, the arithmetic difference is Δr 1 , the M+th The arithmetic difference of the radius from one through hole to the Nth through hole increases, and the arithmetic difference is Δr 2 ;
    所述|Δr 1|与Δr 2相等。 The |Δr 1 | is equal to Δr 2.
  9. 根据权利要求1所述的光调制器，其特征在于，所述通孔的数量N大于等于5，沿光传输方向第i+1孔到i孔的距离为d(i+1)i，i＝1,2,3……N；The light modulator according to claim 1, wherein the number N of the through holes is greater than or equal to 5, and the distance from the i+1th hole to the i hole in the light transmission direction is d(i+1)i, i =1,2,3……N;
    当N＝2M，M为大于等于3的整数时，则第1通孔到第M通孔满足关系式d (i+1)(i+2)-d (i+1)i为等差递减数列，其中i＝1,2,3……M，等差差值为Δd 1；第M+1通孔到第N通孔满足d (i+1)(i+2)-d (i+1)i为等差递增数列，其中i＝M+1,M+2……N，等差差值为Δd 2； When N=2M and M is an integer greater than or equal to 3, then the first through hole to the Mth through hole satisfy the relational expression d (i+1)(i+2) -d (i+1) i is equal and decreasing Number sequence, where i=1, 2, 3……M, the arithmetic difference is Δd 1 ; the M+1 th through hole to the N th through hole satisfy d (i+1)(i+2) -d (i+ 1) i is an arithmetic increasing sequence, where i=M+1, M+2...N, and the arithmetic difference is Δd 2 ;
    当N＝2M-1，M为大于等于3的整数时，则第1通孔到第M通孔满足关系式d (i+1)(i+2)-d (i+1)i为等差递减数列，其中i＝1,2,3……M，等差差值为Δd 1；第M+1通孔到第N通孔满足d (i+1)(i+2)-d (i+1)i为等差递增数列，其中i＝M,M+2……N，等差差值为Δd 2； When N=2M-1 and M is an integer greater than or equal to 3, then the first through hole to the Mth through hole satisfy the relation d (i+1)(i+2) -d (i+1) i is equal Decreasing difference sequence, where i=1, 2, 3……M, the arithmetic difference is Δd 1 ; the M+1 th through hole to the N th through hole satisfy d (i+1)(i+2) -d ( i+1) i is an arithmetic increasing sequence, where i=M, M+2...N, and the arithmetic difference is Δd 2 ;
    所述|Δd 1|与Δd 2相等。 Said |Δd 1 | is equal to Δd 2.
  10. 根据权利要求1-9任一项所述的光调制器，其特征在于，当所述通孔的数量N为偶数时，所述波导上设有通槽，所述通槽设在沿光传输方向第N/2个通孔和第N/2+1个通孔之间，用于将第N/2个通孔与第N/2+1个通孔连通。The optical modulator according to any one of claims 1-9, wherein when the number N of the through holes is an even number, the waveguide is provided with through grooves, and the through grooves are arranged along the light transmission The direction between the N/2 th through hole and the N/2+1 th through hole is used to connect the N/2 th through hole and the N/2+1 th through hole.
PCT/CN2020/105585 2019-10-10 2020-07-29 Optical modulator WO2021068606A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910961011.9A CN110737114A (en) 2019-10-10 2019-10-10 Optical modulator
CN201910961011.9 2019-10-10

Publications (1)

Publication Number Publication Date
WO2021068606A1 true WO2021068606A1 (en) 2021-04-15

Family

ID=69268660

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/105585 WO2021068606A1 (en) 2019-10-10 2020-07-29 Optical modulator

Country Status (2)

Country Link
CN (1) CN110737114A (en)
WO (1) WO2021068606A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114063203A (en) * 2021-11-11 2022-02-18 浙江传媒学院 Surface plasmon optical modulator and photoelectric device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110737114A (en) * 2019-10-10 2020-01-31 深圳大学 Optical modulator

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120099817A1 (en) * 2010-09-29 2012-04-26 Qimin Quan High Quality Factor Photonic Crystal Nanobeam Cavity and Method of Designing and Making Same
CN102495480A (en) * 2011-12-07 2012-06-13 电子科技大学 Electro-optic modulator with graphene and micronano optical fiber composite structure
CN107438794A (en) * 2015-04-16 2017-12-05 柏林工业大学 Optoelectronic component with resonator
CN110737114A (en) * 2019-10-10 2020-01-31 深圳大学 Optical modulator

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0121448D0 (en) * 2001-09-04 2001-10-24 Univ Cardiff Optical switch
US7603016B1 (en) * 2007-04-30 2009-10-13 The United States Of America As Represented By The Secretary Of The Air Force Semiconductor photonic nano communication link apparatus
CN102680429B (en) * 2012-05-30 2013-11-06 四川大学 Subminiature microcavity gas sensor
CN105954234A (en) * 2016-04-28 2016-09-21 北京邮电大学 Nano beam waveguide filter and micro cavity cascaded structure-based one-dimensional photonic crystal integrated sensor
CN107664791B (en) * 2017-09-30 2018-07-24 北京邮电大学 A kind of single-particle acquisition equipment of 1-D photon crystal nanometer slot micro-cavity structure
CN208283680U (en) * 2018-05-28 2018-12-25 *** A kind of optical phase modulator and optical beam scanner
CN109709641B (en) * 2019-01-24 2020-06-12 华南师范大学 Multimode cross structure based on periodic dielectric waveguide and design method thereof
CN109830889A (en) * 2019-03-19 2019-05-31 北京工业大学 Compound 1-D photon crystal nano beam cavity surface plasma laser

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120099817A1 (en) * 2010-09-29 2012-04-26 Qimin Quan High Quality Factor Photonic Crystal Nanobeam Cavity and Method of Designing and Making Same
CN102495480A (en) * 2011-12-07 2012-06-13 电子科技大学 Electro-optic modulator with graphene and micronano optical fiber composite structure
CN107438794A (en) * 2015-04-16 2017-12-05 柏林工业大学 Optoelectronic component with resonator
CN110737114A (en) * 2019-10-10 2020-01-31 深圳大学 Optical modulator

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MEISTER STEFAN, BÜLENT FRANKE, HANS JOACHIM EICHLER, SEBASTIAN KUPIJAI, HANJO RHEE, AWS AL-SAADI, LARS ZIMMERMANN: "Photonic Integrated Circuits for Optical Communication", OPTOELECTRONICS, no. 2, 1 May 2012 (2012-05-01), pages 59 - 62, XP055798727 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114063203A (en) * 2021-11-11 2022-02-18 浙江传媒学院 Surface plasmon optical modulator and photoelectric device
CN114063203B (en) * 2021-11-11 2023-12-12 浙江传媒学院 Surface plasmon optical modulator and photoelectric device

Also Published As

Publication number Publication date
CN110737114A (en) 2020-01-31

Similar Documents

Publication Publication Date Title
Du et al. Tunability analysis of a graphene-embedded ring modulator
Gao et al. Ultra-compact and low-loss polarization rotator based on asymmetric hybrid plasmonic waveguide
Suzuki et al. Integrated-optic double-ring resonators with a wide free spectral range of 100 GHz
Hu et al. Ultrabroadband compact graphene–silicon TM-pass polarizer
Zhang et al. Ultracompact and low-power-consumption silicon thermo-optic switch for high-speed data
WO2021068606A1 (en) Optical modulator
Guan et al. Graphene-coated surface core fiber polarizer
Wang et al. Optical absorption in graphene-on-silicon nitride microring resonators
WO2010040303A1 (en) Surface-plasmon-polaritons tunable optical resonant ring filter
Yin et al. Ultra-broadband TE-pass polarizer using a cascade of multiple few-layer graphene embedded silicon waveguides
Sanchez et al. Analysis and design optimization of a hybrid VO 2/Silicon2 $\times $2 microring switch
Yang et al. Proposal for a 2$\,\times\, $2 Optical Switch Based on Graphene-Silicon-Waveguide Microring
CN104181707A (en) Graphene-based polarization insensitive optical modulator
Xu et al. High-speed traveling-wave modulator based on graphene and microfiber
Wang et al. Recent progress in waveguide-integrated graphene photonic devices for sensing and communication applications
Xiao et al. A terahertz modulator based on graphene plasmonic waveguide
Berahim et al. Polarizing effect of MoSe2-coated optical waveguides
Guo et al. All-optical control of a single resonance in a graphene-on-silicon nanobeam cavity using thermo-optic effect
Qi et al. Electrical tunable topological valley photonic crystals for on-chip optical communications in the telecom band
CN104317071B (en) Graphene-based planar optical waveguide polarization beam splitter
Zhao et al. Side-coupled Fabry-Perot resonator filter based on dual-waveguide Bragg grating
Yan et al. Efficient thermal tuning employing metallic microheater with slow-light effect
Hao et al. Plasmonic Metasurfaces Enabled Ultra‐Compact Broadband Waveguide TM‐Pass Polarizer
CN207780388U (en) A kind of polarization beam apparatus
He et al. In-fiber graphene-hBN polarizer with enhanced performance and bandwidth

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20874669

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 22.08.2022)

122 Ep: pct application non-entry in european phase

Ref document number: 20874669

Country of ref document: EP

Kind code of ref document: A1