CN112209439B - 无掺杂低温热致变vo2粉体材料的制备方法 - Google Patents
无掺杂低温热致变vo2粉体材料的制备方法 Download PDFInfo
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 49
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000002360 preparation method Methods 0.000 claims abstract description 28
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- 230000027311 M phase Effects 0.000 claims description 7
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- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 3
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 3
- 239000002244 precipitate Substances 0.000 claims description 3
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- 239000002243 precursor Substances 0.000 abstract description 16
- 238000001556 precipitation Methods 0.000 abstract description 8
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 abstract description 5
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 abstract description 5
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- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Inorganic materials O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
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- MVEOHWRUBFWKJY-UHFFFAOYSA-N 7-hydroxynaphthalene-2-sulfonic acid Chemical compound C1=CC(S(O)(=O)=O)=CC2=CC(O)=CC=C21 MVEOHWRUBFWKJY-UHFFFAOYSA-N 0.000 description 1
- -1 N5H37W6O24 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
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- 238000006243 chemical reaction Methods 0.000 description 1
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- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 238000005216 hydrothermal crystallization Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
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- 238000002844 melting Methods 0.000 description 1
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- 239000011858 nanopowder Substances 0.000 description 1
- OGUCKKLSDGRKSH-UHFFFAOYSA-N oxalic acid oxovanadium Chemical compound [V].[O].C(C(=O)O)(=O)O OGUCKKLSDGRKSH-UHFFFAOYSA-N 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
- WQDSRJBTLILEEK-UHFFFAOYSA-N sulfurous acid Chemical compound OS(O)=O.OS(O)=O WQDSRJBTLILEEK-UHFFFAOYSA-N 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G31/00—Compounds of vanadium
- C01G31/02—Oxides
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/88—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by thermal analysis data, e.g. TGA, DTA, DSC
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- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/30—Particle morphology extending in three dimensions
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
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- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Composite Materials (AREA)
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- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
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CN202011110973.2A CN112209439B (zh) | 2020-10-16 | 2020-10-16 | 无掺杂低温热致变vo2粉体材料的制备方法 |
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CN114044538B (zh) * | 2021-10-25 | 2024-03-12 | 西安理工大学 | 具有表面介孔结构的核壳结构m相vo2的制备方法 |
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CN1837061A (zh) * | 2006-03-06 | 2006-09-27 | 复旦大学 | 一种相变温度可调的相变智能材料及其制备方法 |
CN101700909B (zh) * | 2009-11-25 | 2012-02-29 | 中国科学技术大学 | 水热法制备具有智能节能性能的二氧化钒的方法 |
CN101880060B (zh) * | 2010-07-14 | 2013-12-18 | 中国科学技术大学 | 快速制备单斜相vo2的方法 |
CN104060247A (zh) * | 2013-03-20 | 2014-09-24 | 中国科学院上海硅酸盐研究所 | 金红石相二氧化钒薄膜及其制备方法 |
KR101750473B1 (ko) * | 2015-09-10 | 2017-06-23 | 한국세라믹기술원 | 무소성 고결정성 이산화바나듐의 제조방법 |
CN105271408A (zh) * | 2015-11-13 | 2016-01-27 | 北京科技大学 | 一种锡-钨共掺杂二氧化钒粉体及其制备方法 |
WO2018023720A1 (en) * | 2016-08-05 | 2018-02-08 | South University Of Science And Technology Of China | Hydrothermal synthesis of monoclinic vanadium dioxide nanowires with high aspect ratio |
CN109399709A (zh) * | 2018-10-25 | 2019-03-01 | 西安建筑科技大学 | 一种降低vo2粉体热处理温度及相变温度的方法 |
CN109399711A (zh) * | 2018-11-23 | 2019-03-01 | 法尔胜泓昇集团有限公司 | 一种金红石相二氧化钒纳米粉体的制备方法 |
JP7145506B2 (ja) * | 2019-02-26 | 2022-10-03 | 国立研究開発法人産業技術総合研究所 | 二酸化バナジウム粒子の製造方法 |
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Address after: No. 1509, xiangdao Avenue, Chengxiang Town, Qingbaijiang District, Chengdu, Sichuan 610000 (rooms a1301-1311 and 1319, 13th floor, block a, railway port building) Patentee after: Chengdu advanced metal material industry technology Research Institute Co.,Ltd. Address before: 610306 Chengdu City, Chengdu, Sichuan, China (Sichuan) free trade test zone, Chengdu City, Qingbaijiang District, xiangdao Boulevard, Chengxiang Town, No. 1509 (room 13, A District, railway port mansion), room 1319 Patentee before: CHENGDU ADVANCED METAL MATERIAL INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE Co.,Ltd. |
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Application publication date: 20210112 Assignee: SICHUAN PAN YAN TECHNOLOGY Co.,Ltd. Assignor: Chengdu advanced metal material industry technology Research Institute Co.,Ltd. Contract record no.: X2024980003062 Denomination of invention: Preparation method of undoped low-temperature thermally induced VO2powder materials Granted publication date: 20220524 License type: Exclusive License Record date: 20240322 |