CN112142101A - Preparation method of single-layer two-dimensional nano material MXene - Google Patents

Preparation method of single-layer two-dimensional nano material MXene Download PDF

Info

Publication number
CN112142101A
CN112142101A CN202011060527.5A CN202011060527A CN112142101A CN 112142101 A CN112142101 A CN 112142101A CN 202011060527 A CN202011060527 A CN 202011060527A CN 112142101 A CN112142101 A CN 112142101A
Authority
CN
China
Prior art keywords
mxene
alc
solution
layer
aln
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202011060527.5A
Other languages
Chinese (zh)
Inventor
朱艳超
李恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hubei University
Original Assignee
Hubei University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hubei University filed Critical Hubei University
Priority to CN202011060527.5A priority Critical patent/CN112142101A/en
Publication of CN112142101A publication Critical patent/CN112142101A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C01G23/002—Compounds containing, besides titanium, two or more other elements, with the exception of oxygen or hydrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/30—Compounds containing rare earth metals and at least one element other than a rare earth metal, oxygen or hydrogen, e.g. La4S3Br6
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C01G15/006—Compounds containing, besides gallium, indium, or thallium, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G25/00—Compounds of zirconium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G25/00—Compounds of zirconium
    • C01G25/006—Compounds containing, besides zirconium, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G27/00—Compounds of hafnium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G27/00—Compounds of hafnium
    • C01G27/006—Compounds containing, besides hafnium, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G31/00—Compounds of vanadium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G31/00—Compounds of vanadium
    • C01G31/006—Compounds containing, besides vanadium, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G33/00—Compounds of niobium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G33/00—Compounds of niobium
    • C01G33/006—Compounds containing, besides niobium, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G37/00—Compounds of chromium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G37/00—Compounds of chromium
    • C01G37/006—Compounds containing, besides chromium, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G39/00—Compounds of molybdenum
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G39/00—Compounds of molybdenum
    • C01G39/006—Compounds containing, besides molybdenum, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM

Abstract

The invention discloses a preparation method of a single-layer two-dimensional nano material, which comprises the following steps: ultrasonically dispersing the multilayer MXene solution for 5-12h, then crushing in a cell crusher for 10-30min, centrifuging to obtain supernatant containing monolayer MXene, and then vacuum drying to obtain monolayer MXene, wherein the ultrasonic and crushing processes are carried out under inert gas atmosphere or vacuum condition. The method comprises the steps of dispersing the multiple layers of MXene by ultrasound, and crushing by using a biological crusher to obtain the single layer of MXene with good appearance, so that the steps are simplified, the sample can be prevented from being polluted by impurities due to the introduction of foreign substances, the cost is reduced, and a foundation is laid for large-scale production.

Description

Preparation method of single-layer two-dimensional nano material MXene
Technical Field
The invention belongs to the technical field of MXene preparation, and particularly relates to a preparation method of a single-layer two-dimensional nano material MXene.
Background
MXene since the first report of Yury Gogotsi in 2011, the material research is on the rise, and the material research reaches a new research climax in 2019. MXene, as a novel two-dimensional material, has a Graphene-like structure and is obtained by etching a ternary layered metal material MAX, and a layer A with low bond energy and high reaction activity is etched from the MAX material to obtain the performance similar to that of Graphene (Graphene), so MXene is named. Its chemical expression is Mn+1XnTX, M is a premetal element (e.g., Sc, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, etc.), X represents carbon or nitrogen, n is 1,2.3, and TX is a surface functional group (-OH, -F, and-O). More than 20 MXenes have been reported including Ti3C2Tx、Ti2C、Ti3CNx、TiVbC,Ta4C3、Nb2C,V2C and Nb4C3And the like. The existing methods for etching MAX phase to obtain MXene are as follows: hydrofluoric acid (HF) etching, lithium fluoride (LiF) plus hydrochloric acid (HCl) etching, ammonium hydrogen fluoride (NH)4HF2) Etching, molten fluoride etching, sodium hydroxide (NaOH) plus sulfuric acid (H)2SO4) And (4) etching. MXene has high surface activity, so far all MXene prepared has OH, O and F functional group ends connected to the surface.
MXene has good physicochemical properties including high conductivity, high specific surface area, multiple active sites and various chemical compositions due to the unique structure, and the unique morphology, structure and performance of MXene have the significance of deep research in the fields of energy storage, batteries, super capacitors and the like, and a single-layer MXene can better embody the excellent performance of MXene in the nanometer size and has great potential in the field of photocatalysis.
The research on the preparation method of the monolayer two-dimensional nano material MXene has been reported at home and abroad. For example, patent "a method for preparing Mxene material based on molten salt method" (CN 111403186A) discloses a method for preparing Mxene material based on molten salt method, which comprises mixing MAX phase Ti3SnC2With molten salts (CuBr)2NaCl and KCl) are mixed and reacted, and MXene material is obtained after being cleaned by dilute hydrochloric acid; patent' A high lithium storage capacity Ti3C2TxThe mechanochemical preparation method (CN 111232981A) discloses a mechanochemical method for preparing Ti with high lithium storage capacity3C2TxMethod (2) with a MAX phase of Ti3AlC2Uses a mechanical force to induce a chemical reaction in a strong alkaline environment as a raw material to prepare stable small-size monolayer Ti3C2TxIn the experimental process, the single-layer Ti is obtained by strong alkali intercalation, ice bath and freeze drying3C2Tx. It can be seen that two methods or introduction of impurity ions (Cu)2+、Na+Etc.) or complex synthetic procedures, which are complicated, relatively low in yield, and do not involve application in photocatalysis. Therefore, the MXene preparation method which is simple in step, high in yield and in line with the photocatalysis field has important significance.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides the preparation method of the single-layer two-dimensional nano material MXene, and the obtained single-layer two-dimensional nano material MXene has good appearance, no impurity introduction and simple process operation.
In order to solve the technical problems, the invention adopts the following technical scheme:
the preparation method of the single-layer two-dimensional nano material MXene is provided and comprises the following steps:
ultrasonically dispersing the multilayer MXene solution for 5-12h, then crushing in a cell crusher for 10-30min, centrifuging to obtain supernatant containing monolayer MXene, and then vacuum drying to obtain monolayer MXene, wherein the ultrasonic and crushing processes are carried out under inert gas atmosphere or vacuum condition.
According to the scheme, the MXene chemical expression is Mn+1XnTXM is an early transition metal element Sc, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, X is carbon or nitrogen, n is 1,2 or 3, and Tx is a surface functional group-OH, F, O.
According to the scheme, the power of the cell crusher is 200-300W, and the operating frequency is 0.5-0.75 Hz.
According to the scheme, the centrifugal process comprises the following steps: centrifuging at 3500-; the vacuum drying conditions are as follows: 60-80 ℃ for 8-12 h.
According to the scheme, the multilayer MXene solution is prepared by etching MAX phase raw materials through HF solution.
According to the scheme, the preparation method of the multilayer MXene solution comprises the following specific operation steps: adding MAX phase raw materials into HF solution at the speed of 200-400mg/min, stirring for 18-36h at the temperature of 30-80 ℃, and cleaning to be neutral by using a centrifuge to obtain the multilayer MXene solution.
According to the scheme, the mass-volume ratio of the MAX phase raw material to the HF solution is as follows: (15-69) 1 mg/ml; the concentration of the HF solution is 30-69%.
According to the scheme, the molecular formula of the MAX phase raw material is Mn+1AXnWherein M is an early transition metal element Sc, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, wherein X is C, N, n is 1,2 or 3, and A is Al, Si, Sn or Ge. Preferably, the MAX phase source is Sc2AlC、Sc2AlN、Ti2AlC、Ti2AlN、V2AlC、V2AlN、Cr2AlC、Cr2AlN、Mo2GaC、Ti3AlC2、Ti3AlN2、V3AlC2、Ta3AlC2、Ti4AlN3、V4AlC3、Ta4NAl3、Nb4AlC3、Ti3SiC2At least one of (1).
The invention has the beneficial effects that:
the method comprises the steps of dispersing the clustered multiple layers of MXene by ultrasonic, and crushing by using a biological crusher to obtain the single layer of MXene, wherein the boundary size is 30-100nm, the thickness is 5-10nm, the shape is good, the steps are simplified, the sample can be prevented from being polluted by impurities due to the introduction of foreign substances, the cost is reduced, and the foundation is laid for large-scale production.
Drawings
FIG. 1 is a view of the multilayer Ti prepared in example 13C2TxScanning electron micrograph (c).
FIG. 2 is a multilayer Ti prepared in example 23C2TxScanning electron micrograph (c).
FIG. 3 is a multilayer Ti prepared in example 33C2TxScanning electron micrograph (c).
FIG. 4 shows a single layer of Ti prepared in example 13C2TxA projection electron microscope image of (a).
FIG. 5 shows a Ti layer having a small thickness obtained in comparative example 13C2TxA projection electron microscope image of (a).
FIG. 6 shows multi-and single-layered Ti prepared in example 13C2TxXRD pattern of (a).
FIG. 7 shows a single Ti layer prepared in example 13C2TxXPS spectra of (a).
Detailed Description
The invention will be further described with reference to specific examples, the advantages and features of which will become apparent from the description. The examples are merely illustrative and do not limit the scope of the invention in any way. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention, and that such changes and modifications may be made without departing from the spirit and scope of the invention.
Example 1
Providing a single-layer two-dimensional material Ti3C2TxThe preparation method comprises the following specific steps:
(1) under the argon gas atmosphere, 1g of Ti3AlC2The powder was added to 40ml HF (49%) solution at a rate of 200mg/min, stirred at 45 ℃ for 24h, centrifuged at 8000rpm for 3min in a centrifuge, and centrifuged several times until washed neutral (pH 7) to give multi-layered Ti3C2TxSolution, greenish black;
(2) subjecting the multilayer Ti obtained in the step (1)3C2TxUltrasonically dispersing the solution in argon gas atmosphere for 5h, then crushing in a cell crusher in argon gas atmosphere for 10min, wherein the cell crusher power is 200W, the operation frequency is 0.5Hz, centrifuging the solution at 3500rpm for 3min to obtain a monolayer Ti with the concentration of 0.4mg/ml3C2TxSupernatant fluid is dried for 10 hours in vacuum at 60 ℃ to obtain single-layer Ti3C2TxAnd (3) powder.
Example 2
Providing a single-layer two-dimensional material Ti3C2TxThe preparation process of (4) is substantially the same as in example 1 except that Ti is used in the step (1)3AlC2The amount was replaced with 2 g.
Example 3
Providing a single-layer two-dimensional material Ti3C2TxThe procedure of (3) was substantially the same as in example 1 except that 60ml of HF (49%) solution was used in step (1).
Comparative example 1
(1) Under argon atmosphere, 1g of Ti3AlC2The powder was added to 40ml HF (49%) solution at a rate of 200mg/min, stirred at 45 ℃ for 24h, centrifuged at 8000rpm for 3min in a centrifuge, and centrifuged several times until washed neutral (pH 7) to give multi-layered Ti3C2TxA solution;
(2) drying the solution to obtain a multilayer Ti3C2TxAdding the sample powder into 20ml DMSO solution, stirring for 12h at 500rpm/min in argon atmosphere, then centrifuging the solution at 8000rpm for 3min with deionized water, cleaning for 6 times, and freeze drying to obtain gray black powder.
FIGS. 1 to 3 are Ti multilayers obtained in examples 1 to 33C2TxScanning electron microscope images of; it can be seen that the multilayer Ti obtained by etching with HF3C2TxThe distribution is uniform, the appearance is excellent, the aluminum alloy is in an accordion shape, and the Al layer is successfully removed.
FIGS. 4 and 5 are each a single layer of Ti prepared in example 13C2TxAnd the Ti of less layer prepared in comparative example 13C2TxA projection electron microscope image of (a); as can be seen from the figure: single-layer Ti obtained by intercalation with DMSO organic solvent as intercalator in comparative example 13C2TxThe distribution is uneven, and the obtained sample shows a few-layer structure under TEM and is thicker in layer thickness. Single layer Ti obtained in example 13C2TxThe appearance is good, most of the thin slices with the boundary size of 30-100nm are observed under a transmission electron microscope, and the thickness is 5-10 nm.
FIG. 6 is a graph of multi-and single-layered Ti prepared in example 13C2TxAn XRD pattern of (a); the disappearance of the 39 ° peak is seen in the figure, demonstrating that HF etches away the Al layer, demonstrating that the etch was successful.
FIG. 7 shows a single Ti layer prepared in example 13C2TxThe XPS spectrum of the sample can be seen, and the Ti 2p peak and the common TiO of the prepared sample can be seen2The Ti 2p peak in the catalyst is similar and can be used in the field of photocatalysis.
The raw materials listed in the invention, the values of the upper limit and the lower limit and the interval of the raw materials, and the values of the upper limit and the lower limit and the interval of the process parameters can all realize the invention, and the implementation is not always carried out.

Claims (9)

1. A preparation method of a single-layer two-dimensional nano material is characterized by comprising the following steps:
ultrasonically dispersing the multilayer MXene solution for 5-12h, then crushing in a cell crusher for 10-30min, centrifuging to obtain supernatant containing monolayer MXene, and then vacuum drying to obtain monolayer MXene, wherein the ultrasonic and crushing processes are carried out under inert gas atmosphere or vacuum condition.
2. The method according to claim 1, wherein the MXene has a chemical formula of Mn+1XnTXM is an early transition metal element Sc, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, X is carbon or nitrogen, n is 1,2 or 3, and Tx is a surface functional group-OH, -F, -O.
3. The method as claimed in claim 1, wherein the power of the cell crusher is 200-300W and the operation frequency is 0.5-0.75 Hz.
4. The method of claim 1, wherein the centrifugation process is: centrifuging at 3500-; the vacuum drying conditions are as follows: 60-80 ℃ for 8-12 h.
5. The method of claim 1, wherein the plurality of layers of MXene solution is prepared by etching MAX phase starting material with HF solution.
6. The preparation method of claim 1, wherein the multi-layer MXene solution is prepared by the following specific operation steps: adding MAX phase raw materials into HF solution at the speed of 200-400mg/min, stirring for 18-36h at the temperature of 30-80 ℃, and cleaning to be neutral by using a centrifuge to obtain the multilayer MXene solution.
7. The method according to claim 6, wherein the mass to volume ratio of the MAX phase raw material to the HF solution is (15-69) 1 mg/ml; the concentration of the HF solution is 30-69%.
8. The method of claim 6, wherein the MAX phase starting material has the formula Mn+1AXnWherein M is an early transition metal element Sc, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, wherein X is a C or N element, N is 1,2 or 3, and A is Al, Si, Sn or Ge.
9. The method of claim 8, wherein the MAX phase source is Sc2AlC、Sc2AlN、Ti2AlC、Ti2AlN、V2AlC、V2AlN、Cr2AlC、Cr2AlN、Mo2GaC、Ti3AlC2、Ti3AlN2、V3AlC2、Ta3AlC2、Ti4AlN3、V4AlC3、Ta4NAl3、Nb4AlC3、Ti3SiC2At least one of (1).
CN202011060527.5A 2020-09-30 2020-09-30 Preparation method of single-layer two-dimensional nano material MXene Pending CN112142101A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011060527.5A CN112142101A (en) 2020-09-30 2020-09-30 Preparation method of single-layer two-dimensional nano material MXene

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011060527.5A CN112142101A (en) 2020-09-30 2020-09-30 Preparation method of single-layer two-dimensional nano material MXene

Publications (1)

Publication Number Publication Date
CN112142101A true CN112142101A (en) 2020-12-29

Family

ID=73951289

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011060527.5A Pending CN112142101A (en) 2020-09-30 2020-09-30 Preparation method of single-layer two-dimensional nano material MXene

Country Status (1)

Country Link
CN (1) CN112142101A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113401937A (en) * 2021-06-30 2021-09-17 河海大学 MXene-TiO2Preparation method of (1)
CN113456837A (en) * 2021-07-14 2021-10-01 山西医科大学 MXene @ BSA nano diagnosis and treatment agent with controllable size and preparation and application thereof
CN113578355A (en) * 2021-07-30 2021-11-02 陕西科技大学 Titanium dioxide/titanium carbide nanosheet with exposed (001) crystal face as well as preparation method and application thereof
CN113578356A (en) * 2021-07-30 2021-11-02 陕西科技大学 Titanium carbide MXene nanosheet and preparation method and application thereof
CN114804106A (en) * 2022-05-18 2022-07-29 中国科学技术大学 Vanadium titanium carbide MXene material and preparation method and application thereof
CN115196631A (en) * 2022-07-27 2022-10-18 陕西科技大学 Ultrathin single-layer vanadium-based MXene material and preparation method and application thereof
WO2023048081A1 (en) * 2021-09-24 2023-03-30 株式会社村田製作所 Two-dimensional particle, electrically conductive film, electrically conductive paste, and method for producing two-dimensional particle
WO2023149424A1 (en) * 2022-02-01 2023-08-10 国立大学法人東海国立大学機構 Mxene generation method, mxene material, mxene dispersion, and conductive mxene thin film

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103705928A (en) * 2013-12-27 2014-04-09 中国科学院高能物理研究所 Single-layer MoS2 nano-chip, preparation method and nano-drug carrier
CN108511733A (en) * 2018-05-16 2018-09-07 中国科学院金属研究所 A kind of MXene/ bimetallic oxides composite material and preparation method and lithium ion battery negative material
CN108686690A (en) * 2017-04-12 2018-10-23 中国科学院福建物质结构研究所 One kind being based on graphite phase carbon nitride g-C3N4Photochemical catalyst and its preparation method and application
CN110534741A (en) * 2019-09-06 2019-12-03 浙江大学 A kind of fast preparation method and application of few layer MXenes
CN111285359A (en) * 2020-01-14 2020-06-16 武汉理工大学 Preparation method of single-layer/few-layer MXene two-dimensional material

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103705928A (en) * 2013-12-27 2014-04-09 中国科学院高能物理研究所 Single-layer MoS2 nano-chip, preparation method and nano-drug carrier
CN108686690A (en) * 2017-04-12 2018-10-23 中国科学院福建物质结构研究所 One kind being based on graphite phase carbon nitride g-C3N4Photochemical catalyst and its preparation method and application
CN108511733A (en) * 2018-05-16 2018-09-07 中国科学院金属研究所 A kind of MXene/ bimetallic oxides composite material and preparation method and lithium ion battery negative material
CN110534741A (en) * 2019-09-06 2019-12-03 浙江大学 A kind of fast preparation method and application of few layer MXenes
CN111285359A (en) * 2020-01-14 2020-06-16 武汉理工大学 Preparation method of single-layer/few-layer MXene two-dimensional material

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113401937A (en) * 2021-06-30 2021-09-17 河海大学 MXene-TiO2Preparation method of (1)
CN113456837A (en) * 2021-07-14 2021-10-01 山西医科大学 MXene @ BSA nano diagnosis and treatment agent with controllable size and preparation and application thereof
CN113578355A (en) * 2021-07-30 2021-11-02 陕西科技大学 Titanium dioxide/titanium carbide nanosheet with exposed (001) crystal face as well as preparation method and application thereof
CN113578356A (en) * 2021-07-30 2021-11-02 陕西科技大学 Titanium carbide MXene nanosheet and preparation method and application thereof
CN113578356B (en) * 2021-07-30 2023-11-17 陕西科技大学 Titanium carbide MXene nano-sheet and preparation method and application thereof
CN113578355B (en) * 2021-07-30 2023-11-17 陕西科技大学 Titanium dioxide/titanium carbide nanosheet with exposed (001) crystal face as well as preparation method and application thereof
WO2023048081A1 (en) * 2021-09-24 2023-03-30 株式会社村田製作所 Two-dimensional particle, electrically conductive film, electrically conductive paste, and method for producing two-dimensional particle
WO2023149424A1 (en) * 2022-02-01 2023-08-10 国立大学法人東海国立大学機構 Mxene generation method, mxene material, mxene dispersion, and conductive mxene thin film
CN114804106A (en) * 2022-05-18 2022-07-29 中国科学技术大学 Vanadium titanium carbide MXene material and preparation method and application thereof
CN114804106B (en) * 2022-05-18 2024-03-01 中国科学技术大学 Vanadium titanium carbide MXene material, and preparation method and application thereof
CN115196631A (en) * 2022-07-27 2022-10-18 陕西科技大学 Ultrathin single-layer vanadium-based MXene material and preparation method and application thereof
CN115196631B (en) * 2022-07-27 2023-12-08 陕西科技大学 Ultrathin single-layer vanadium-based MXene material and preparation method and application thereof

Similar Documents

Publication Publication Date Title
CN112142101A (en) Preparation method of single-layer two-dimensional nano material MXene
Li et al. Advances in MXene films: synthesis, assembly, and applications
Xie et al. Two-dimensional layered compound based anode materials for lithium-ion batteries and sodium-ion batteries
Lei et al. Tailoring MXene-based materials for sodium-ion storage: synthesis, mechanisms, and applications
CN111799464B (en) MXene/graphene composite nanosheet, preparation method and application thereof, electrode plate and application thereof
Tan et al. Metal–organic framework-derived high conductivity Fe3C with porous carbon on graphene as advanced anode materials for aqueous battery-supercapacitor hybrid devices
CN108658122B (en) Two-dimensional metal carbonitride derivative nano material and preparation method thereof
CN111286078A (en) Flexible conductive MXene-based foam and preparation method thereof
US9359675B2 (en) Producing two-dimensional sandwich nanomaterials based on graphene
WO2017084561A1 (en) Preparation method for large-size graphene oxide or graphene
CN106882796B (en) Preparation method of three-dimensional graphene structure/high-quality graphene
CN106219608B (en) A kind of preparation method of two-dimensional material
Zhang et al. Hierarchical utilization of raw Ti 3 C 2 T x MXene for fast preparation of various Ti 3 C 2 T x MXene derivatives
KR20130097640A (en) Method for producing two-dimensional sandwich nanomaterials based on graphene
JP2014505650A (en) Graphene derivative-carbon nanotube composite material and manufacturing method thereof
Hu et al. One-step synthesis for cations intercalation of two-dimensional carbide crystal Ti3C2 MXene
WO2012120291A1 (en) Electrolytic exfoliation of graphite
CN112850710B (en) Method for preparing single-layer Mxene nanosheet by using steam stripping technology
CN105905908A (en) Method of preparing nano silicon on the basis of halloysite raw material
CN104386677A (en) Micro-oxidized graphene and preparation method thereof
CN111792669B (en) TiO 22Nano-rod/multilayer graphene composite material and preparation method thereof
Xia et al. Microwave-assisted facile and rapid synthesis of layered metal hydroxide nanosheet arrays towards high-performance aqueous hybrid supercapacitors
US20200102227A1 (en) Nanoporous copper supported copper oxide nanosheet array composites and method thereof
Anjum et al. Ti-based MXenes for energy storage applications: structure, properties, processing parameters and stability
Yang et al. Porous silicon from industrial waste engineered for superior stability lithium-ion battery anodes

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20201229

RJ01 Rejection of invention patent application after publication