CN112103252B - Refrigeration type LTCC micro-system based on metal micro-channel and preparation method thereof - Google Patents
Refrigeration type LTCC micro-system based on metal micro-channel and preparation method thereof Download PDFInfo
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- CN112103252B CN112103252B CN202010790503.9A CN202010790503A CN112103252B CN 112103252 B CN112103252 B CN 112103252B CN 202010790503 A CN202010790503 A CN 202010790503A CN 112103252 B CN112103252 B CN 112103252B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
Abstract
The invention discloses a refrigeration type LTCC micro-system based on a metal micro-channel and a preparation method thereof, wherein the preparation method comprises the following steps: the device comprises an LTCC substrate, a metal block with a plurality of micro channels, a heat source chip, a plurality of TEC chips, a plurality of devices, a surrounding frame, a cover plate and a plurality of pins. The cold end cold energy of the TEC chip is used for cooling the heat source chip and simultaneously ensuring that the temperature in the closed space of the upper layer can reach a low-temperature state. The heat generated by the hot end of the TEC chip is transferred to the cooling liquid in the micro-channel in the metal block through the large-area metal block below the metal block, and the cooling liquid brings the heat to the outside of the LTCC substrate through the micro-channel 7 to achieve the purpose of heat dissipation.
Description
Technical Field
The invention belongs to the technical field of microelectronic integrated heat dissipation refrigeration, and particularly relates to a refrigeration type LTCC (Low temperature Co-fired ceramic) microsystem based on a metal micro-channel and a preparation method thereof.
Background
The rapid development of the microelectronic technology and the miniaturization development of the electronic products make LTCC (Low Temperature Co-fired Ceramic) substrates with high density integration characteristics more and more paid attention, no matter in the fields of radio communication, military, civil and the like, the LTCC technology is related, the miniaturization of the whole system can be ensured by the aid of the LTCC technology and a combination method of a cover plate and a surrounding frame added on the LTCC technology, but the thermal conductivity of the LTCC is generally 2-3W/mk, the heat dissipation requirement of a high-power chip in a micro-system is difficult to meet, in order to solve the problem of Low self heat dissipation of the LTCC technology, a micro-channel technology built in the LTCC Ceramic substrate is developed, the technology is that a hollow cavity and an embedded cavity are embedded in the LTCC substrate, a metal column array is arranged in the hollow cavity, the other parts of the hollow cavity and the embedded cavity are filled with sacrificial materials, the sacrificial materials are volatilized to form a micro-channel with metal columns in the sintering process, and the heat generated by a heat source can be transferred to cold liquid in the micro-channel, and the micro-channel can absorb the heat through the flowing liquid to realize the purpose of transferring the heat dissipation of the micro-channel. However, the heat dissipation in this way can only ensure that the whole system works at a proper temperature, and the whole micro-system packaging cavity can not work at a lower temperature only by means of efficient heat dissipation.
In the field of refrigeration at present, new semiconductor refrigeration technology is increasingly applied to isothermal control scenes in industrial production. A TEC (semiconductor Cooler) is attached below a heat source chip on an LTCC substrate, the temperature of the inner space of the enclosure frame is accurately reduced by utilizing the advantages of high refrigerating speed, small volume, no pollution, high precision and the like, and meanwhile, the heat dissipation of the TEC chip is realized by depending on a micro-channel in a metal block. The cavity above the heat source chip is ensured to be in a low temperature state while the heat dissipation is ensured, and the LTCC refrigeration technology packaging technology is a key technology for realizing the LTCC refrigeration technology packaging.
The introduction of microchannels has brought about many problems, with the existing disadvantages: (1) When the micro-channel is prepared, sacrificial materials need to be filled into the micro-channel, and the shape of the sacrificial materials needs to be precisely matched with the shape of the prepared micro-channel, so that the difficulty is brought to the process, the precise processing is very difficult, and the micro-channel is difficult to be accurately filled into the micro-channel; (2) At present, graphite and carbon ribbons are mostly used as sacrificial materials, and if the materials cannot be completely burnt in the co-firing process, impurities such as carbon and the like are left, so that the characteristics of the circuit are greatly influenced; (3) If the sacrificial material is improperly prepared and cannot be matched with the ceramic forming characteristics of the LTCC material, serious problems of collapse, deformation and the like of the substrate can be caused; (4) The size of the micro-channel prepared by the prior art is limited.
Chinese patent CN109449088A discloses a high heat dissipation LTCC substrate with built-in micro-channels, which is prepared by a combination method of arranging metal columns on the upper layer, arranging micro-channels and hollow cavities on the middle layer, and arranging cooling liquid inlets and outlets on the lower layer, thereby improving the heat dissipation performance of the substrate. But the refrigeration can not be realized, the process requires that the upper layer metal columns and the middle layer metal columns are in one-to-one correspondence, and the joint gap between the pure carbon ribbon in the micro flow channel and the carbon ribbon with the metal array can not be larger than 200 mu m, which puts a strict requirement on the process technology and leads to the collapse of lamination by a little carelessness. The production qualification rate is low, and the large-scale manufacturing can not be met.
Chinese patent CN109830443A discloses a large-scale micro-flow channel manufacturing method based on LTCC technology, which manufactures a large-scale micro-flow channel by processing a sacrificial material and a supporting material into a composite material and placing the composite material into an LTCC substrate during lamination. However, sintering is used to volatilize the sacrificial material to ensure the formation of the micro-channel without refrigeration effect, and if the cross-sectional area of the micro-channel is further enlarged, collapse and other problems may occur.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a refrigeration type LTCC micro-system based on a metal micro-channel and a preparation method thereof. The technical problem to be solved by the invention is realized by the following technical scheme:
a refrigeration type LTCC microsystem based on metal microchannel includes:
the LTCC substrate is provided with a groove which penetrates through the LTCC substrate along a first direction;
the metal block is provided with a plurality of micro channels, the metal block is arranged in the groove of the LTCC substrate, and the micro channels are through holes which penetrate through the metal block along a first direction;
the heat source chip is arranged on the LTCC substrate and stretches across the groove of the LTCC substrate;
the TEC chips are arranged on the lower surface of the heat source chip, are positioned between the metal block and the heat source chip, and have cold ends facing the heat source chip;
a plurality of devices disposed over the LTCC substrate;
an enclosure frame disposed over the LTCC substrate;
the cover plate is arranged on the enclosing frame, the LTCC substrate, the enclosing frame and the cover plate enclose a sealed cavity, and the heat source chip, the TEC chip and the device are all located in the cavity;
the pins are arranged on the side wall of the LTCC substrate.
In an embodiment of the invention, the refrigeration type LTCC microsystem further includes a plurality of connecting pipes, and two ends of the micro channel of each metal block are respectively provided with one connecting pipe.
An embodiment of the present invention further provides a method for preparing a refrigeration type LTCC micro system based on a metal micro channel, which is used for preparing the refrigeration type LTCC micro system of the above embodiment, and the method for preparing the refrigeration type LTCC micro system includes:
preparing an LTCC substrate, wherein a groove penetrating through the LTCC substrate along a first direction is formed in the LTCC substrate;
welding the enclosure frame on the LTCC substrate;
bonding a plurality of TEC chips on the lower surface of the heat source chip, wherein the cold ends of the TEC chips face the heat source chip;
bonding a heat source chip on the LTCC substrate, wherein the heat source chip stretches across the groove of the LTCC substrate;
inserting a metal block with a plurality of micro-channels into the groove of the LTCC substrate, wherein the micro-channels are through holes which penetrate through the metal block along a first direction;
coating heat-conducting glue on the upper surface of the metal block, wherein the heat-conducting glue surrounds the TEC chip to seal the LTCC micro-system;
welding a cover plate on the enclosure frame;
and welding a plurality of pins on the side wall of the LTCC substrate.
In an embodiment of the present invention, after the welding the enclosure frame on the LTCC substrate, the welding further includes:
and welding a plurality of devices on the LTCC substrate, wherein the devices are positioned in a cavity surrounded by the surrounding frame.
In one embodiment of the present invention, preparing an LTCC substrate comprises:
selecting a plurality of lower layer green ceramic chips and a plurality of upper layer green ceramic chips;
sequentially carrying out punching, metal hole filling, pre-drying, circuit silk-screen printing and secondary drying treatment on the lower-layer green ceramic chip to obtain a treated lower-layer green ceramic chip;
cutting off the part, which is equal to the width of the groove, of the upper green ceramic chip at the position corresponding to the groove, and then sequentially carrying out punching, metal hole filling, pre-drying, circuit screen printing and secondary drying treatment on the rest upper green ceramic chip to obtain the processed upper green ceramic chip;
sequentially laminating all the processed lower-layer green ceramic chips positioned below on a laminating die according to a sequence, sequentially laminating all the processed upper-layer green ceramic chips positioned above the lower-layer green ceramic chips according to the sequence, and forming a green body after the lamination is completed;
taking the green body off the lamination die, fixing the green body on a pressure bearing plate by using a clamp, and then carrying out isostatic pressing process treatment on the green body by using mechanical hydrostatic pressure to obtain a laminated green body;
and carrying out hot cutting and sintering treatment on the laminated green body to obtain the LTCC substrate.
In one embodiment of the present invention, the soldering the enclosure frame to the LTCC substrate includes:
coating soldering flux on the periphery of the LTCC substrate, placing the enclosing frame on the soldering flux, and then welding the enclosing frame on the LTCC substrate in an eutectic welding mode.
In one embodiment of the present invention, attaching a heat source chip on the LTCC substrate includes:
and coating conductive adhesive or heat-conducting adhesive on the LTCC substrate, then placing the heat source chip on the conductive adhesive or the heat-conducting adhesive, and finally carrying out curing treatment to bond the heat source chip on the LTCC substrate.
In an embodiment of the present invention, bonding a plurality of TEC chips to a lower surface of the heat source chip includes:
and coating heat-conducting silicone grease and silicone rubber on the lower surface of the heat source chip, placing the TEC chip on the heat-conducting silicone grease and the silicone rubber, and then carrying out curing treatment to bond the TEC chip on the lower surface of the heat source chip.
In one embodiment of the present invention, bonding a heat source die on the LTCC substrate comprises:
and bonding the heat source chip on the LTCC substrate in a gold wire bonding mode.
The invention has the beneficial effects that:
the invention adopts the LTCC technology to manufacture the substrate, the enclosing frame and the cover plate are manufactured on the LTCC substrate, the TEC chip is pasted below the heat source chip on the surface of the LTCC substrate, and the metal block with the micro-channel is inserted into the groove of the LTCC substrate, thereby successfully developing the micro-system packaging technology with the TEC refrigeration and the micro-channel heat radiation based on the LTCC technology. The cold end of the TEC is used for realizing the work of the space above the LTCC substrate at low temperature, meanwhile, the cold end of the TEC can also cool a heat source chip, the hot end of the TEC transfers heat to a micro-channel through a metal block, and the forced flow of cooling liquid in the micro-channel can rapidly take the heat out, so that efficient refrigeration and heat dissipation are realized. The invention avoids introducing sacrificial materials into the LTCC, avoids the process problem that the shape of the sacrificial materials and the shape of the micro-channel need to be accurate, and the difficult problems of difficult co-firing matching with the LTCC substrate, collapse and rupture during firing, influence on circuit characteristics caused by partial impurities left in the co-firing process and the like.
In addition, the micro-channel manufactured by the invention is arranged in the metal block, the structure has simple process and convenient processing, the size of the manufactured micro-channel is far higher than that of other methods, and the manufactured micro-channel is not limited by the factors brought by the process and the like, and can realize large-scale manufacturing. Compared with the existing micro-system packaging technology, the invention utilizes the advantages of high refrigeration speed, small volume and controllable refrigeration precision of the TEC, integrates the TEC into the system and provides conditions for the internal work of the whole micro-system to work under constant low temperature.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of a refrigeration type LTCC micro-system based on a metal micro-channel according to an embodiment of the present invention;
fig. 2 is a front view of a refrigeration type LTCC micro system based on a metal micro channel according to an embodiment of the present invention;
fig. 3 is a left side view of a refrigeration type LTCC micro system based on a metal micro channel according to an embodiment of the present invention;
FIG. 4 is a flow chart of a process for preparing a package for a micro-system with a TEC and a micro-channel according to an embodiment of the present invention;
fig. 5 is a flow chart of a process for preparing a grooved LTCC substrate according to an embodiment of the present invention;
fig. 6 is a schematic diagram of a sintering process of a grooved LTCC substrate according to an embodiment of the present invention.
Description of the reference numerals:
a cover plate-1; a surrounding frame-2; TEC chip-3; a heat source chip-4; LTCC substrate-5; a metal block with a micro-channel-6; micro flow channel-7; a groove-8; device-9; pin-10.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 1, fig. 2 and fig. 3, fig. 1 is a schematic structural view of a refrigeration type LTCC micro-system based on a metal micro-channel according to an embodiment of the present invention, fig. 2 is a front view of a refrigeration type LTCC micro-system based on a metal micro-channel according to an embodiment of the present invention, and fig. 3 is a left view of a refrigeration type LTCC micro-system based on a metal micro-channel according to an embodiment of the present invention. This embodiment provides a refrigeration type LTCC microsystem based on metal microchannel, this refrigeration type LTCC microsystem includes: the device comprises an LTCC substrate 5, a metal block 6 with a plurality of micro-channels 7, a heat source chip 4, a plurality of TEC chips 3, a plurality of devices 9, a surrounding frame 2, a cover plate 1 and a plurality of pins 10, wherein a groove 8 penetrating through the LTCC substrate along a first direction is formed in the LTCC substrate 5, the first direction is the length direction of the LTCC substrate 5, and the cross section of the groove 8 is square; the metal block 6 is arranged in a groove 8 of the LTCC substrate 5, the micro-channels 7 are through holes penetrating through the metal block 6 along a first direction, the cross section of the metal block 6 is square, the length of the metal block 6 is equal to that of the LTCC substrate 5, the width of the metal block 6 is equal to that of the groove 8, the thickness of the metal block 6 is smaller than that of the groove 8, the micro-channels 7 are circular, and the number of the micro-channels 7 is two; the heat source chip 4 is arranged on the LTCC substrate 5 and stretches across the groove 8 of the LTCC substrate 5, the heat source chip 4 is a high-power chip needing heat dissipation, and the heat source chip 4 is in a bare chip form and has no welding spots in the front and the back; the TEC chips 3 are disposed on the lower surface of the heat source chip 4, the TEC chips 3 are located between the metal block 6 and the heat source chip 4, and the cold ends of the TEC chips face the heat source chip 4, preferably, the sum of the thickness of the TEC chips 3 and the thickness of the metal block 6 is equal to the thickness of the groove 8, while in actual use, a thin layer of heat-conducting silicone grease may be disposed between the TEC chips 3 and the metal block 6, at this time, the sum of the thickness of the TEC chips 3, the thickness of the metal block 6 and the heat-conducting silicone grease layer is equal to the thickness of the groove 8, and the number of the TEC chips 3 is, for example, two; a device 9 is arranged on the LTCC substrate 5, the device 9 being for example a resistor, a capacitor or a die with low heating power; the enclosure frame 2 is arranged on the LTCC substrate 5; the cover plate 1 is arranged on the enclosing frame 2, the LTCC substrate 5, the enclosing frame 2 and the cover plate 1 enclose a sealed cavity, and the heat source chip 4, the TEC chip 3 and the device 9 are all positioned in the cavity; the pins 10 are disposed on the sidewalls of the LTCC substrate 5. The both ends at every miniflow channel of metal block can be provided with a connecting pipe respectively, wherein, a connecting pipe connects the micropump, heat abstractor is connected to another connecting pipe, like this after the coolant liquid that will supply water the case when the micropump sends into the miniflow channel through a connecting pipe, the connecting pipe of the other end can be sent into to heat abstractor with carrying thermal liquid, heat abstractor can send the coolant liquid of handling to the water supply case once more, thereby make the coolant liquid can recycle, the connecting pipe is the hose for example.
The cold end cold energy of the TEC chip 3 of this embodiment is used for cooling the heat source chip 4 and ensures that the temperature in the upper confined space can reach a low temperature state. The heat generated by the hot end of the TEC chip 3 of this embodiment is transferred to the cooling liquid in the micro flow channel 7 in the metal block 6 through the metal block 6 with a large area thereunder, and the cooling liquid brings the heat to the outside of the LTCC substrate 5 through the micro flow channel 7 to achieve the purpose of heat dissipation.
Example two
Referring to fig. 4, fig. 4 is a flowchart of a packaging process for preparing a microsystem with a TEC and a micro channel according to an embodiment of the present invention. On the basis of the embodiment, the invention also provides a preparation method of the refrigeration type LTCC micro-system based on the metal micro-channel, which comprises the following steps:
step 1, please refer to fig. 5, an LTCC substrate 5 is prepared, and a groove 8 penetrating through the LTCC substrate 5 along a first direction is disposed on the LTCC substrate 5.
Step 1.1, selecting a plurality of lower layer green ceramic chips and a plurality of upper layer green ceramic chips.
Specifically, the raw ceramic tile material is, for example, duPont951, all the raw ceramic tiles are classified, and the raw ceramic tiles are divided into lower layer raw ceramic tiles and upper layer raw ceramic tiles, wherein the thickness of the single layer of the lower layer raw ceramic tiles is 0.1mm, and in this embodiment, for example, the raw ceramic tiles with the thickness of 1mm are required, so that the number of the raw ceramic tiles required to be prepared is 1 ÷ 0.1= 10. The thickness of the upper layer green ceramic chip is 0.2mm, the number of the green ceramic chips with the required thickness of 4mm is 4/0.2 = 20.
And step 1.2, sequentially carrying out punching, metal hole filling, pre-drying, circuit silk-screen printing and secondary drying treatment on the lower-layer green ceramic chip to obtain the processed lower-layer green ceramic chip.
Specifically, mechanical punching is carried out on the lower layer of green porcelain, the hole diameter of the punching is 75-100 μm, and is preferably 80 μm in consideration of 85% shrinkage during lamination, and then metal hole filling, pre-drying, circuit screen printing and secondary drying are carried out.
And step 1.3, cutting off a part with the same width as the groove 8 at the position, corresponding to the groove 8, of the upper-layer green ceramic chip, and then sequentially carrying out punching, metal hole filling, pre-drying, circuit screen printing and secondary drying treatment on the rest upper-layer green ceramic chip to obtain the processed upper-layer green ceramic chip.
Specifically, the upper green ceramic chip is cut at the position where the groove 8 is required to be formed on the LTCC substrate 5, the width of the cut part is equal to the width of the groove 8 to be formed finally, for example, the thickness of the groove 8 is 4mm, the width is 14mm, and the length is 50mm, then the upper green ceramic chip with the width of 14mm is cut at the position of the upper green ceramic chip corresponding to the groove 8, then mechanical punching is performed on other parts of the upper green ceramic chip, the punching aperture range is 75-100 μm, and 80 μm is selected in consideration of 85% shrinkage during lamination, and then metal filling, pre-drying, and single circuit screen printing and secondary drying are performed on the surface layer of the upper green ceramic chip.
And step 1.4, sequentially laminating all the processed lower-layer green ceramic chips positioned below on a laminating die according to the sequence, sequentially laminating all the processed upper-layer green ceramic chips positioned above the lower-layer green ceramic chips according to the sequence, and forming a green body after the lamination is completed.
Specifically, the lamination is arranged, all the lower-layer green ceramic chips are laminated in sequence on a lamination die, and then all the upper-layer green ceramic chips are laminated in sequence according to the direction, so that the through holes of the upper-layer green ceramic chips and the circuit wiring of the lower-layer green ceramic chips completely correspond to each other, and a green body is formed after the lamination is completed.
Step 1.5, taking the green body from the lamination die, fixing the green body on a pressure bearing plate by using a clamp, wherein the green body is in contact with the pressure bearing plate and is the lower layer green ceramic chip at the bottommost layer, namely, the lower layer green ceramic chip at the bottommost layer is pasted on the pressure bearing plate, then carrying out isostatic pressing process treatment on the green body by using mechanical static pressure to obtain the laminated green body, wherein the pressure used by the isostatic pressing process is equal to 3000psi for example.
And step 1.6, carrying out hot cutting and sintering treatment on the laminated green body to obtain the LTCC substrate 5.
Specifically, the laminated green body is cut into a square shape with a length of 50mm and a width of 50mm by hot cutting, and the cut green body is subjected to low-temperature co-firing treatment, as shown in fig. 6, the temperature is first raised from room temperature to 550 ℃, the temperature raising rate is 2 ℃/min, then the temperature is maintained at 550 ℃ for 2h, then the temperature is raised from 550 ℃ to 870 ℃, the temperature raising rate is 3 ℃/min, then the temperature is maintained at 870 ℃ for 1h, and finally the temperature is lowered from 870 ℃ to room temperature for natural cooling, wherein the room temperature is different according to the sintering temperature.
After the LTCC substrate 5 is manufactured, the obtained LTCC substrate 5 needs to be checked, whether the width, the thickness and the length of the LTCC substrate 5 are the same as those of the designed LTCC substrate 5 or not is checked, whether the X-ray detection silk-screen printing is complete or not, whether holes are communicated or not is further required, and the like.
And 2, welding the enclosure frame 2 on the LTCC substrate 5.
Specifically, the periphery of the LTCC substrate 5 is coated with the soldering flux, the enclosing frame 2 is placed on the soldering flux, and then the enclosing frame 2 is welded on the LTCC substrate 5 in an eutectic welding mode.
Further, the length and the width of the surrounding frame 2 are equal to those of the LTCC substrate 5, for example, the length is 50mm, the width is 50mm, the thickness of the surrounding frame 2 is 4mm, for example, the material of the surrounding frame 2 is 4J29, before the surrounding frame 2 is welded, the LTCC substrate 5 needs to be cleaned first, then the flux is coated around the LTCC substrate 5, the surrounding frame 2 is placed on the flux, the surrounding frame 2 is fixed by a fixture, then the surrounding frame 2 is welded on the LTCC substrate 5 by using a eutectic welding method, and finally cleaning, checking, repairing and the like are performed.
And 3, welding a plurality of devices 9 on the LTCC substrate 5, wherein the plurality of devices 9 are positioned in a cavity surrounded by the surrounding frame 2.
Specifically, since the enclosure frame 2 is welded at a high temperature, in order to prevent the high temperature from affecting the device 9, the surface of the LTCC substrate 5 on which the enclosure frame 2 is welded is cleaned after the enclosure frame 2 is welded, and then the LTCC substrate 5 is coated with solder paste and the device 9 is placed, so as to weld the device 9, and then plasma cleaning, inspection, repair, and the like are performed after the welding. The device 9 may be a resistor, a capacitor, or a die with very little heat generation power.
And 4, bonding the plurality of TEC chips 3 on the lower surface of the heat source chip 4, wherein the cold ends of the TEC chips 3 face the heat source chip 4.
Specifically, after the heat source chip 4 is stabilized, the cold end of the selected TEC chip 3 is turned up, the lower surface of the heat source chip 4 is coated with heat-conducting silicone grease and silicone rubber, the TEC chip 3 is bonded to the heat source chip 4, and after several minutes, the silicone rubber is cured, the number of the TEC chips 3 is two, for example, and the type of the TEC chip 3 is TES1-031208383, for example.
And 5, adhering the heat source chip 4 on the LTCC substrate 5, wherein the heat source chip 4 stretches across the groove 8 of the LTCC substrate 5.
Specifically, a conductive adhesive or a heat conductive adhesive is coated on the LTCC substrate 5, then the heat source chip 4 is placed on the conductive adhesive or the heat conductive adhesive, and finally, a high temperature curing process is performed to bond the heat source chip 4 on the LTCC substrate 5, wherein the heat source chip 4 is a bare chip and has no front and back solder joints, and the specification of the heat source chip 4 is, for example, 16mm in width, 27mm in length, and 1mm in thickness.
And 6, bonding the heat source chip 4 on the LTCC substrate 5.
Specifically, the bonded heat source chip 4 is subjected to plasma cleaning, then the heat source chip 4 is bonded on the LTCC substrate 5 in a gold wire bonding mode, so that the heat source chip 4 is bonded on the LTCC substrate 5, and finally, the inspection is carried out.
And 7, inserting the metal block 6 with a plurality of micro-channels 7 into the groove 8 of the LTCC substrate 5, wherein the micro-channels 7 are through holes penetrating through the metal block 6 along the first direction.
Specifically, the metal block 6 with the micro flow channel 7 is prepared and the metal block 6 is inserted into the groove 8 of the LTCC substrate 5. The specific preparation method of the metal block 6 with the micro-channel 7 comprises the following steps: the method comprises the steps of firstly cutting a metal block 6 with required thickness, width and length, wherein the thickness is 1.7mm for example, the width is 14mm for example, and the length is 50mm for example, the material of the metal block is a material with good heat conductivity, such as gold, silver, copper, aluminum or alloy, then forming a plurality of circular holes on any one side surface, the number of the circular holes is two for example, the distance between the two circular holes is 3mm, the distance between the circular holes and the upper surface and the lower surface of the metal block 6 is 0.1mm, the aperture is 1.5mm, the circular holes are punched to be arranged at the bottom to form two parallel micro channels 7, connecting pipes are respectively inserted into an inlet and an outlet of each micro channel 7, the connecting pipes are 1.5mm for example, one of the connecting pipes is connected with an external micro pump, the micro pump is connected with a water supply tank to provide circulating power, and the connecting pipes are hoses for example.
And 8, coating heat-conducting glue on the upper surface of the metal block 6, wherein the heat-conducting glue surrounds the TEC chip 3 to seal the LTCC micro system.
Specifically, heat conducting glue is evenly coated on the upper surface of the metal block 6 inserted into the groove 8, the heat conducting glue is coated around the TEC chip 3, and after a period of time, the heat conducting glue is cured, so that the space around the TEC chip 3 is sealed, and good sealing performance is achieved, wherein the heat conducting glue is Kaffet silica gel K-5205.
And 9, welding the cover plate 1 on the surrounding frame 3.
Specifically, the width and the length of the cover plate 1 are the same as those of the LTCC substrate 5, the specification of the cover plate 1 is, for example, 0.25mm in thickness, 50mm in length, and 50mm in width, the material of the cover plate 1 is, for example, the composite material 4J42, the LTCC substrate 5 with the enclosure frame 3 prepared in the previous step is fixed by using a clamp, and then the cover plate 1 is covered on the enclosure frame 3 by using parallel sealing welding, so that the LTCC substrate 5, the enclosure frame 2, and the cover plate 1 enclose a sealed cavity.
And 10, welding a plurality of pins 10 on the side wall of the LTCC substrate 5.
Through the process and the design, the refrigeration type LTCC micro-system package based on the metal micro-channel can be manufactured, the micro-system ensures the miniaturization of the module, the TEC chip ensures that the upper cavity can work at low temperature while the heat source chip is greatly cooled, and the micro-channel ensures the heat dissipation of the TEC, so that the dual effects of refrigeration and heat dissipation of the whole micro-system are improved.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic data point described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
The foregoing is a further detailed description of the invention in connection with specific preferred embodiments and it is not intended to limit the invention to the specific embodiments described. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. The utility model provides a refrigeration type LTCC microsystem based on metal microchannel which characterized in that includes:
the LTCC substrate is provided with a groove which penetrates through the LTCC substrate along a first direction;
the metal block is provided with a plurality of micro channels, the metal block is arranged in the groove of the LTCC substrate, and the micro channels are through holes which penetrate through the metal block along a first direction;
the heat source chip is arranged on the LTCC substrate and stretches across the groove of the LTCC substrate;
the TEC chips are arranged on the lower surface of the heat source chip, are positioned between the metal block and the heat source chip, and have cold ends facing the heat source chip;
a number of devices disposed over the LTCC substrate;
an enclosure frame disposed over the LTCC substrate;
the cover plate is arranged on the enclosing frame, the LTCC substrate, the enclosing frame and the cover plate enclose a sealed cavity, and the heat source chip, the TEC chip and the device are all positioned in the cavity;
the pins are arranged on the side wall of the LTCC substrate.
2. The refrigeration type LTCC microsystem as claimed in claim 1, further comprising a plurality of connecting tubes, one connecting tube being disposed at each end of the micro flow channel of each metal block.
3. A method for preparing a refrigeration type LTCC microsystem based on a metal micro flow channel, which is used for preparing the refrigeration type LTCC microsystem of claim 1 or 2, the method for preparing the refrigeration type LTCC microsystem comprising:
preparing an LTCC substrate, wherein a groove penetrating through the LTCC substrate along a first direction is formed in the LTCC substrate;
welding the enclosure frame on the LTCC substrate;
bonding a plurality of TEC chips on the lower surface of the heat source chip, wherein the cold ends of the TEC chips face the heat source chip;
bonding a heat source chip on the LTCC substrate, wherein the heat source chip stretches across the groove of the LTCC substrate;
inserting a metal block with a plurality of micro-channels into the groove of the LTCC substrate, wherein the micro-channels are through holes penetrating through the metal block along a first direction;
coating heat-conducting glue on the upper surface of the metal block, wherein the heat-conducting glue surrounds the TEC chip to seal the LTCC micro-system;
welding a cover plate on the enclosure frame;
and welding a plurality of pins on the side wall of the LTCC substrate.
4. The method of making a refrigerant-type LTCC microsystem as claimed in claim 3, further comprising, after soldering said enclosure to said LTCC substrate:
and welding a plurality of devices on the LTCC substrate, wherein the devices are positioned in a cavity surrounded by the surrounding frame.
5. The method of making a refrigerated LTCC microsystem as claimed in claim 3, further comprising after attaching a plurality of TEC chips to the lower surface of the heat source chip:
bonding the heat source chip on the LTCC substrate.
6. The method of making a cryogenic LTCC microsystem as claimed in claim 3, wherein the step of making the LTCC substrate comprises:
selecting a plurality of lower layer green ceramic chips and a plurality of upper layer green ceramic chips;
sequentially carrying out punching, metal hole filling, pre-drying, circuit silk-screen printing and secondary drying treatment on the lower-layer green ceramic chip to obtain a treated lower-layer green ceramic chip;
cutting off a part with the width equal to that of the groove at the position, corresponding to the groove, of the upper-layer green ceramic chip, and then sequentially carrying out punching, metal hole filling, pre-drying, circuit screen printing and secondary drying treatment on the remaining upper-layer green ceramic chip to obtain a treated upper-layer green ceramic chip;
sequentially laminating all the processed lower-layer green ceramic chips positioned below on a laminating die according to a sequence, sequentially laminating all the processed upper-layer green ceramic chips positioned above the lower-layer green ceramic chips according to the sequence, and forming a green body after the lamination is completed;
taking the green body off the lamination die, fixing the green body on a pressure bearing plate by using a clamp, and then carrying out isostatic pressing process treatment on the green body by using mechanical hydrostatic pressure to obtain a laminated green body;
and carrying out hot cutting and sintering treatment on the laminated green body to obtain the LTCC substrate.
7. The method of making a cryogenic LTCC microsystem as claimed in claim 3, wherein said soldering said enclosure to said LTCC substrate comprises:
coating soldering flux on the periphery of the LTCC substrate, placing the enclosing frame on the soldering flux, and then welding the enclosing frame on the LTCC substrate in an eutectic welding mode.
8. The method of making a cryogenic LTCC microsystem as claimed in claim 3, wherein attaching a heat source die to said LTCC substrate comprises:
and coating conductive adhesive or heat-conducting adhesive on the LTCC substrate, then placing the heat source chip on the conductive adhesive or the heat-conducting adhesive, and finally carrying out curing treatment to bond the heat source chip on the LTCC substrate.
9. The method of making a refrigerated LTCC microsystem as claimed in claim 3, wherein attaching a plurality of TEC chips to a lower surface of the heat source chip comprises:
and coating heat-conducting silicone grease and silicone rubber on the lower surface of the heat source chip, placing the TEC chip on the heat-conducting silicone grease and the silicone rubber, and then carrying out curing treatment to bond the TEC chip on the lower surface of the heat source chip.
10. The method of making a cryogenic LTCC microsystem as claimed in claim 5, wherein bonding said heat source die to said LTCC substrate comprises:
and bonding the heat source chip on the LTCC substrate in a gold wire bonding mode.
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| CN101635285A (en) * | 2008-07-24 | 2010-01-27 | 达方电子股份有限公司 | Ceramic substrate structure with radiating function and manufacturing method thereof |
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| CN111125923A (en) * | 2019-12-30 | 2020-05-08 | 西安电子科技大学 | Micro-channel radiator design method based on active phased-array antenna radiation |
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| CN101635285A (en) * | 2008-07-24 | 2010-01-27 | 达方电子股份有限公司 | Ceramic substrate structure with radiating function and manufacturing method thereof |
| CN109449088A (en) * | 2018-10-30 | 2019-03-08 | 西安微电子技术研究所 | A kind of high heat dissipation ltcc substrate and its manufacturing method of built-in fluidic channels |
| CN111125923A (en) * | 2019-12-30 | 2020-05-08 | 西安电子科技大学 | Micro-channel radiator design method based on active phased-array antenna radiation |
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