CN112078041B - Cutting process for electroplated diamond wire after thinning - Google Patents
Cutting process for electroplated diamond wire after thinning Download PDFInfo
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- CN112078041B CN112078041B CN202010754294.2A CN202010754294A CN112078041B CN 112078041 B CN112078041 B CN 112078041B CN 202010754294 A CN202010754294 A CN 202010754294A CN 112078041 B CN112078041 B CN 112078041B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0064—Devices for the automatic drive or the program control of the machines
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
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Abstract
The invention relates to a cutting process of an electroplated diamond wire after thinning, which belongs to the field of cutting of hard and brittle materials, wherein a thinned electroplated gold steel wire is adopted to cut crystalline silicon by bypassing a U-shaped wire groove on a cutting roller, and the wire inlet length of the electroplated gold steel wire is greater than the wire return length, and the cutting process comprises the following steps of zero point setting: setting the position of the silicon single crystal rod just contacting with the wire net as a zero point during cutting, wherein the coordinate of the cutting starting position is-0.5 mm; setting a spraying mode and a spraying position; setting process parameters; and starting the machine, clicking a cutting confirmation button, and enabling the equipment to enter an automatic cutting state.
Description
Technical Field
The invention belongs to the field of cutting of hard and brittle materials, and particularly relates to a cutting process of an electroplated diamond wire after thinning.
Background
At present, the photovoltaic industry is increasingly severe in form, cost reduction and efficiency improvement are particularly important, and the slicing end is used for improving the utilization rate of silicon materials, so that the diameter of a bus (thinning), the groove distance and the number of slices are reduced, the utilization rate of each kilogram of silicon materials is improved, and the purposes of cost reduction and efficiency improvement are achieved. And a matched cutting process is needed to stabilize the yield and the surface quality of a silicon wafer to realize the thinning, and how to realize the cutting of the thinned diamond wire to crystalline silicon and improve the slicing efficiency is the problem to be solved.
Disclosure of Invention
Aiming at various defects in the prior art, the cutting process for the refined diamond wire is provided, and the slicing rate can be effectively improved.
In order to achieve the purpose, the invention provides the following technical scheme:
a cutting process after thinning of an electroplating diamond wire is characterized in that a thinned electroplating gold steel wire bypasses a U-shaped wire groove in a cutting roller to cut crystalline silicon, and the wire inlet length of the electroplating gold steel wire is larger than the wire return length.
Preferably, the method comprises the following steps:
s1: setting a zero point: setting the position of the silicon single crystal rod just contacting with a wire net as a zero point during cutting, wherein the coordinate of the cutting starting position is-0.5 mm;
s2: setting a spraying mode and a spraying position;
s3: setting process parameters;
s4: and starting the machine, clicking a cutting confirmation button, and enabling the equipment to enter an automatic cutting state.
Preferably, the electroplated gold steel wire is an electroplated diamond wire with the bus wire diameter of 35-50 microns, and the diameter of a finished product is 48-68 microns.
Preferably, the spraying mode adopts an overflow pipe form, and the height of the lower end of the overflow pipe from a wire net is 5-7 mm.
Preferably, step S3 includes the following steps:
step a: setting the speed of a cutter feeding table to be 1300-1700 mu m/min, and initially cutting the old wire, wherein the wire feeding amount is greater than the wire returning amount;
step b: a stage of raising the table speed, wherein the table speed is set to be 2800-4000 mu m/min, and the temperature is set to be 16-20 ℃;
step c: and in the stage of reducing the speed of the cutter retracting table, the table speed is gradually reduced to 100-300 mu m/min, and the wire inlet quantity is greater than the wire return quantity.
Preferably, in the step a, the incoming line quantity is set to be 800-1100 m, and the return line quantity is set to be 700-1050 m; in the step b, the wire inlet amount is 550-780 m, and the wire return amount is 500-730 m; in step c, the incoming line amount is set to 900-1200 m, and the return line amount is set to 800-1200 m.
Preferably, the longitudinal section of the U-shaped wire casing is U-shaped, and the longitudinal section of the U-shaped bottom is semicircular.
Preferably, the slot distance between two adjacent U-shaped wire slots is equal to the thickness of a silicon wafer, the diameter of a steel wire and the saw damage; the depth of the groove is equal to the diameter of the electroplated gold steel wire 4.
Preferably, the included angle between the two side edges of the U-shaped wire groove and the lowest position of the groove bottom is 30-50 degrees.
Preferably, the radius of the bottom of the U-shaped wire groove is equal to the diameter of the gold-plated steel wire/2 +1 μm.
The beneficial effects of the invention are:
1. the process disclosed by the invention is matched with the electroplating diamond wire with the thinned bus diameter, so that the thinned diamond wire is ensured to efficiently cut crystalline silicon, the groove pitch is reduced, the number of pieces is obviously increased, the utilization rate of silicon materials per kilogram is increased, and cost reduction and efficiency improvement are realized.
2. The longitudinal section of U-shaped wire casing becomes the U-shaped, and the longitudinal section of U-shaped bottom is semi-circular, and this design can make the electroplating buddha's warrior attendant line after refining firmly fix in the tank bottom, and very big reduction is rocked, guarantees the slicing quality.
Drawings
Fig. 1 is a structural schematic diagram of a U-shaped wire casing.
In the drawings: 1-U-shaped wire groove and 101-side edge.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions of the present invention are described below clearly and completely with reference to the accompanying drawings of the present invention, and based on the embodiments in the present application, other similar embodiments obtained by a person of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present application. In addition, directional terms such as "upper", "lower", "left", "right", etc. in the following embodiments are directions with reference to the drawings only, and thus, the directional terms are used for illustrating the present invention and not for limiting the present invention.
The invention is further described with reference to the drawings and the preferred embodiments.
As shown in figure 1, in the cutting process after the thinning of the electroplated diamond wire, a thinned electroplated gold steel wire is adopted to bypass a U-shaped wire groove on a cutting roller to cut crystalline silicon, and the wire inlet length of the electroplated gold steel wire is greater than the wire return length.
The longitudinal section of each U-shaped wire slot 1 is U-shaped, the longitudinal section of the bottom of each U-shaped wire slot is semicircular, and the slot distance between every two adjacent U-shaped wire slots is equal to the thickness of a silicon wafer, the diameter of a steel wire and the saw damage; the depth (mum) of groove is 4 for electrogilding copper wire diameter (mum), and the degree of depth of groove can be stabilized the electrogilding copper wire in the ditch inslot, the contained angle between two sides 101 of U-shaped wire casing and the bottom of the groove bottom minimum is 30 ~ 50, does benefit to and stabilizes the copper wire. The radius of the bottom of the U-shaped wire groove is equal to the diameter of the electrogilding steel wire/2 +1 mu m, so that the electrogilding steel wire can be better fixed, the shaking of the electrogilding steel wire at the bottom of the wire groove is reduced, the TTV value of the silicon wafer can be greatly reduced, and the surface quality of the silicon wafer is improved.
Example one
A cutting process after the thinning of an electroplating diamond wire comprises the following steps:
the method comprises the following steps: the coordinate of the starting cutting position of the silicon rod is-0.5 mm, and the coordinate of the silicon rod gradually increases as the silicon rod is pressed down when cutting starts. Stand and watch silicon rod and gauze gap in silicon rod one side, when guaranteeing that zero point position gauze does not have the complete dark seeing through of-0.5 mm position see through light more better, that is to say, the gap is big more better, guarantees that the gauze keeps away from the silicon rod completely.
Step two: the spraying mode is set, the spraying mode adopts an overflow pipe form, and the lower end of the overflow pipe is 5-7 mm away from the height of a wire net. In this embodiment, the lower end of the overflow pipe is set to be 5mm from the wire mesh.
Step three: setting technological parameters, comprising the following three steps:
step a: setting the speed of a cutter feeding table to be 1500-1700 mu m/min, wherein the speed is initially used for cutting the old wire, and the cutting force of the steel wire is weak, so that the steel wire is not suitable for being quickly fed; in order to improve the situation that an old wire enters a cutter, a large-period wire inlet and a large-period wire return are used, the service length of a steel wire is increased, the cutting force is improved, the wire inlet amount is larger than the wire return amount, the wire inlet amount is set to be 900-1100 m, and the wire return amount is set to be 850-1050 m; due to the problem of thickness of the cutter, the cutter is fed at a low linear speed which is set to 1600 m/min; the friction of the cutter is small, and the generated temperature is low, so the temperature is set to be 20-22 ℃;
step b: in the stage of raising the table speed, the cutting force of the steel wire is strongest, the table speed is the largest, in order to obtain better cutting lines, the problem is solved by adopting a small period, the wire inlet amount is 630-780 m, and the wire return amount is 530-730 m; at this time, the cutting force is increased to the maximum, so the table speed is set to be 2800 to 3600 μm/min; the friction is maximum at this time, and the generated temperature is maximum, so the temperature can be set to be 16-18 ℃;
step c: in the stage of reducing the speed of the knife retracting table, the table speed is gradually reduced to 100-300 μm/min, in order to improve the knife retracting situation, a large period is adopted for cutting, the wire feeding amount is greater than the wire returning amount, the wire feeding amount is set to be 900-1100 m, and the wire returning amount is set to be 1000-1200 m.
And starting the machine, clicking a cutting confirmation button, and enabling the equipment to enter an automatic cutting state. Setting tension: cutting tension 0.57.
In this embodiment, the electroplated gold steel wire is an electroplated diamond wire with a bus diameter of 35 μm.
Example two
A cutting process after the thinning of an electroplating diamond wire comprises the following steps:
the method comprises the following steps: the coordinate of the starting cutting position of the silicon rod is-0.5 mm, and the coordinate of the silicon rod gradually increases as the silicon rod is pressed down when cutting starts. Stand and watch silicon rod and gauze gap in silicon rod one side, when guaranteeing that zero point position gauze does not have the complete dark seeing through of-0.5 mm position see through light more better, that is to say, the gap is big more better, guarantees that the gauze keeps away from the silicon rod completely.
Step two: the spraying mode is set, the spraying mode adopts an overflow pipe form, and the lower end of the overflow pipe is 5-7 mm away from the height of a wire net. In this embodiment, the lower extreme of overflow pipe sets up to 6mm apart from the gauze height.
Step three: setting technological parameters, comprising the following three steps:
a, step a: setting the speed of a cutter feeding table to be 1400-1600 mu m/min, wherein the cutting is performed by the old wire, the cutting force of the steel wire is weak, and the steel wire is not suitable for being rapidly fed; in order to improve the condition that an old wire enters a cutter, a large-period incoming wire and a large-period return wire are used, the using length of a steel wire is increased, the cutting force is improved, the incoming wire amount is larger than the return wire amount, the incoming wire amount is set to be 900-1100 m, and the return wire amount is set to be 800-1000 m; due to the problem of the thickness of the cutter, the cutter is fed at a low linear speed which is set to 1600 m/min; the friction of the cutter is small, and the generated temperature is low, so the temperature is set to be 20-22 ℃;
step b: in the stage of raising the table speed, the cutting force of the steel wire is strongest, the table speed is the largest, and in order to obtain better cutting lines, the problem is solved in a small period, wherein the wire inlet amount is 600-750 m, and the wire return amount is 550-700 m; at this time, the cutting force is increased to the maximum, so the linear speed is set to 3000-3800 μm/min; the friction is maximum at this time, and the generated temperature is maximum, so the temperature can be set to be 17-19 ℃;
step c: in the stage of reducing the speed of the knife retracting table, the table speed is gradually reduced to 100-300 μm/min, so as to improve the knife retracting situation, a large period is adopted for cutting, the wire feeding amount is greater than the wire returning amount, the wire feeding amount is set to be 1000-1200 m, and the wire returning amount is set to be 900-1100 m.
And starting the machine, clicking a cutting confirmation button, and enabling the equipment to enter an automatic cutting state. Setting tension: cutting tension 0.57.
In this embodiment, the electroplated gold steel wire is a plated diamond wire with a bus diameter of 45 μm.
EXAMPLE III
A cutting process after the thinning of an electroplating diamond wire comprises the following steps:
the method comprises the following steps: the coordinate of the starting cutting position of the silicon rod is-0.5 mm, and the coordinate of the silicon rod gradually increases along with the pressing down of the starting cutting silicon rod. Stand and watch silicon rod and gauze gap in silicon rod one side, when guaranteeing that zero point position gauze does not have the complete dark seeing through of-0.5 mm position see through light more better, that is to say, the gap is big more better, guarantees that the gauze keeps away from the silicon rod completely.
Step two: the spraying mode adopts an overflow pipe form, and the lower end of the overflow pipe is 5-7 mm away from the wire net. In this embodiment, the lower extreme of overflow pipe sets up to 7mm apart from the gauze height.
Step three: setting technological parameters:
step a: setting the speed of a cutter feeding table to be 1300-1500 mu m/min, wherein the speed is originally old wire cutting, and the cutting force of a steel wire is weak, so that the steel wire is not suitable for being quickly fed; in order to improve the condition that an old wire enters a cutter, a large-period incoming wire and a large-period return wire are used, the using length of a steel wire is increased, the cutting force is improved, the incoming wire quantity is larger than the return wire quantity, the incoming wire quantity is set to be 800-1000 m, and the return wire quantity is set to be 700-900 m; due to the problem of the thickness of the cutter, the cutter is fed at a low linear speed which is set to be 1500 m/min; the friction of the cutter is small, and the generated temperature is low, so the temperature is set to be 20-22 ℃;
step b: in the stage of raising the table speed, the cutting force of the steel wire is strongest, the table speed is the largest, and in order to obtain better cutting lines, the problem is solved by adopting a small period, wherein the wire inlet quantity is 550-700 m, and the wire return quantity is 500-650 m; at this time, the cutting force is increased to the maximum, so the table speed is set to 3300-4000 μm/min; the friction is maximum at this time, and the generated temperature is maximum, so the temperature can be set to be 17-20 ℃;
step c: in the stage of reducing the speed of the knife retracting table, the table speed is gradually reduced to 100-300 μm/min, so as to improve the knife retracting situation, a large period is adopted for cutting, the wire feeding amount is greater than the wire returning amount, the wire feeding amount is set to 900-1200 m, and the wire returning amount is set to 800-1100 m.
And starting the machine, clicking a cutting confirmation button, and enabling the equipment to enter an automatic cutting state. Setting tension: cutting tension 0.57.
In this embodiment, the electroplated gold steel wire is an electroplated diamond wire with a bus wire diameter of 50 μm.
Experimental example one
And (3) cutting the monocrystalline silicon by the method in the first to third embodiments, wherein the thickness of the silicon wafer is 175 microns, the groove distance is 228-246 microns, meanwhile, a control group is set, a common wire groove is adopted, the diameter of a bus is 60 microns, the monocrystalline silicon is cut, and the thickness of the silicon wafer is 175 microns. The experimental results are shown in table one.
According to the design scheme of the cutting process after the diameter of the electroplated diamond wire is reduced, when the diameter of the diamond wire bus is 50 micrometers, 45 micrometers and 35 micrometers, the chip yield is respectively improved by 4.1%, 6.3% and 10.9% compared with that of a control group, the utilization rate of a silicon material is greatly improved, the loss is reduced, the cost expenditure is reduced, and the slicing quality (chromatic aberration, TTV and line marks) meets the market demand.
The present invention has been described in detail, and it should be understood that the detailed description and specific examples, while indicating the preferred embodiment of the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention.
Claims (1)
1. A cutting process after thinning of an electroplated diamond wire is characterized in that a thinned electroplated gold steel wire is adopted to bypass a U-shaped wire groove in a cutting roller to cut crystalline silicon, and the incoming line length of the electroplated gold steel wire is greater than the return line length;
the longitudinal section of the U-shaped wire groove is U-shaped, and the longitudinal section of the U-shaped bottom is semicircular;
the distance between two adjacent U-shaped wire grooves is equal to the thickness of a silicon wafer, the diameter of a steel wire and the saw damage; the depth of the groove is equal to the diameter of the electroplated gold steel wire 4;
the included angle between the two side edges of the U-shaped wire groove and the lowest position of the groove bottom is 30-50 degrees;
the radius of the bottom of the U-shaped wire groove is equal to the diameter of the electrogilding steel wire/2 +1 mu m;
the groove distance of two adjacent U-shaped wire grooves is set to be 228-246 mu m,
the cutting process after the electroplated diamond wire is thinned comprises the following steps:
s1: setting a zero point: setting the position of the silicon single crystal rod just contacting with the wire net as a zero point during cutting, wherein the coordinate of the cutting starting position is-0.5 mm;
s2: setting a spraying mode and a spraying position; the spraying mode adopts an overflow pipe form, and the lower end of the overflow pipe is 5-7 mm away from the wire net;
s3: setting process parameters; in step S3, the method includes the steps of:
a, step a: setting the speed of a cutter feeding table to be 1300-1700 mu m/min, wherein the wire feeding amount is greater than the wire returning amount;
step b: a stage of raising the table speed, wherein the table speed is set to be 2800-4000 mu m/min, and the temperature is set to be 16-20 ℃;
step c: in the stage of reducing the speed of the cutter retracting table, the table speed is gradually reduced to 100-300 mu m/min, and the wire inlet quantity is greater than the wire return quantity;
in the step a, the incoming line quantity is set to be 800-1100 m, and the return line quantity is set to be 700-1050 m; in the step b, the incoming line amount is set to be 550-780 m, and the loop amount is set to be 500-730 m; in step c, the incoming line quantity is set to be 900-1200 m, and the return line quantity is set to be 800-1200 m;
s4: starting up the machine, clicking a cutting confirmation button, and enabling the equipment to enter an automatic cutting state;
the electroplated gold steel wire is an electroplated diamond wire with the bus wire diameter of 35-50 microns, and the diameter of a finished product is 48-68 microns.
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| CN112078041A (en) | 2020-12-15 |
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