CN112071924B - Infrared detector and preparation method thereof - Google Patents
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- CN112071924B CN112071924B CN202010771103.3A CN202010771103A CN112071924B CN 112071924 B CN112071924 B CN 112071924B CN 202010771103 A CN202010771103 A CN 202010771103A CN 112071924 B CN112071924 B CN 112071924B
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- 238000002360 preparation method Methods 0.000 title abstract description 14
- 238000010438 heat treatment Methods 0.000 claims description 28
- 238000000137 annealing Methods 0.000 claims description 19
- 239000002061 nanopillar Substances 0.000 claims description 19
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 238000004528 spin coating Methods 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 6
- 238000005275 alloying Methods 0.000 claims description 4
- 238000002425 crystallisation Methods 0.000 claims description 4
- 230000008025 crystallization Effects 0.000 claims description 4
- 239000002073 nanorod Substances 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 238000004321 preservation Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 abstract description 14
- 238000010521 absorption reaction Methods 0.000 abstract description 13
- 239000000969 carrier Substances 0.000 abstract description 9
- 238000000605 extraction Methods 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 7
- 230000005684 electric field Effects 0.000 abstract description 7
- 238000012546 transfer Methods 0.000 abstract description 6
- 230000031700 light absorption Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 20
- 230000009286 beneficial effect Effects 0.000 description 3
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- 239000010409 thin film Substances 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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Abstract
The invention discloses an infrared detector and a preparation method thereof, wherein the preparation method comprises the following steps: a first electrode; the Si-based infrared detector is connected with the first electrode; the Si-GeSi-Ge nano column is connected with the Si-based infrared detector; and the second electrode is connected with the Si-GeSi-Ge nano column. The Ge shell layer has stronger metal property, can form good interface contact with a metal electrode, and improves the extraction efficiency of a photon-generated carrier of the device; meanwhile, the whole external bias electric field can be distributed more uniformly, and the transfer path of the photon-generated carriers can be shortened. The Si-GeSi-Ge nano-columns can play a role of an antireflection film, and meanwhile, the quantum effect of the Si-GeSi-Ge nano-columns can help to improve the light absorption efficiency. Si and Ge can form a good heterojunction, and the absorption efficiency of light is improved.
Description
Technical Field
The invention relates to the field of sensor processing, in particular to an infrared detector and a preparation method thereof.
Background
The Si-based Photodiode (PD) and the Avalanche Photodiode (APD) have the advantages of low cost, mature process and the like, are widely applied to the field of infrared detection, and are one of the mainstream of the current infrared detectors. However, due to the limitation of materials and device structures, the infrared detector has low efficiency and is difficult to meet the requirement of deep infrared detection.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention provides an infrared detector and a preparation method thereof, which can improve the extraction efficiency of the photo-generated carriers of the device, shorten the migration path of the photo-generated carriers and improve the absorption efficiency of light.
The invention also provides a preparation method of the infrared detector with the advantages.
An infrared detector according to an embodiment of the first aspect of the present invention includes: a first electrode; the Si-based infrared detector is connected with the first electrode; the Si-GeSi-Ge nano column comprises a Ge shell layer and a GeSi intermediate layer, and is connected with the Si-based infrared detector; and the second electrode is connected with the Si-GeSi-Ge nano column.
The infrared detector according to the embodiment of the invention has at least the following beneficial effects: the first electrode is a back electrode, the second electrode is annular, the Ge shell layer has strong metal property and can form good interface contact with the metal electrode, and the extraction efficiency of a photon-generated carrier of the device is improved; meanwhile, the whole external bias electric field can be distributed more uniformly, and the transfer path of the photon-generated carriers can be shortened. The Si-GeSi-Ge nano-columns can play a role of an antireflection film, and meanwhile, the quantum effect of the Si-GeSi-Ge nano-columns can help to improve the light absorption efficiency. Si and Ge can form a good heterojunction, and the absorption efficiency of light is improved.
According to some embodiments of the present invention, the Si-GeSi-Ge nanopillars are circular or hexagonal in shape, have a diameter of 50-800nm, have a center-to-center distance of 150-1600nm between adjacent Si-GeSi-Ge nanopillars, and have a height of 50-500 nm; the thickness of the Ge shell layer is 5-50nm, and the thickness of the GeSi intermediate layer is 1-5 nm. The Ge shell layer has stronger metal property, can form good interface contact with a metal electrode, and improves the extraction efficiency of a photon-generated carrier of the device; meanwhile, the Ge shell layer enables the whole applied bias electric field to be distributed more uniformly, and is beneficial to shortening the migration path of the photon-generated carriers. The Si-GeSi-Ge nano column has the function of an anti-reflection film, and the quantum effect of the Si-GeSi-Ge nano column improves the absorption efficiency of light.
According to some embodiments of the invention, the Si-GeSi-Ge nanopillars further comprise a heterojunction between Si and Ge. The heterojunction improves the absorption efficiency of light.
According to a second aspect of the invention, the preparation method of the infrared detector comprises the following steps: spin-coating a photoresist, and uniformly spin-coating a layer of photoresist on the infrared light incidence surface by using a spin-coating instrument on the Si-based infrared detector; exposing, namely exposing and developing by using a photoetching machine; wet etching, namely etching by adopting a corrosive solution to obtain a Si nano-pillar array; cleaning, removing the photoresist, and cleaning the etching solution; preparing a Ge film, namely evaporating and plating the Ge film on the Si nano-column array by using a film plating machine; step annealing, including crystallization and infiltration; evaporating an electrode: and evaporating electrodes on the back and the front respectively, and alloying to obtain the Si-GeSi-Ge nano-column enhanced infrared detector.
The preparation method of the infrared detector provided by the embodiment of the invention at least has the following beneficial effects: the Ge shell layer has stronger metal property, can form good interface contact with a metal electrode, and improves the extraction efficiency of a photon-generated carrier of the device; meanwhile, the whole external bias electric field can be distributed more uniformly, and the transfer path of the photon-generated carriers can be shortened. The Si-GeSi-Ge nano column/prismoid can play a role of an antireflection film, and meanwhile, the quantum effect of the Si-GeSi-Ge nano column/prismoid can help to improve the absorption efficiency of light. Si and Ge can form a good heterojunction, and the absorption efficiency of light is improved.
According to some embodiments of the invention, the Ge thin film has a thickness of 5-50 nm.
According to some embodiments of the invention, the step annealing comprises: crystallizing, namely heating the Ge film for one time and preserving heat for one time to completely crystallize the Ge film; and (4) infiltrating, and heating and annealing the Ge film for the second time.
According to some embodiments of the invention, the one-time heating comprises heating to 300 ℃ at a rate of 5 ℃/min or heating to 400 ℃ at a rate of 10 ℃/min.
According to some embodiments of the invention, the first incubation is for 30 minutes for the Ge thin film.
According to some embodiments of the invention, the second ramping comprises ramping to 600 ℃ at a rate of 20 ℃/min or to 900 ℃ at a rate of 50 ℃/min.
According to some embodiments of the invention, the second post-ramp-up anneal comprises: if the temperature of the secondary heating is raised to 600 ℃ at the rate of 20 ℃, annealing for 120 minutes; and if the temperature of the second heating is increased to 900 ℃ at the rate of 50 ℃, annealing for 30 minutes.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic structural view of a Si-GeSi-Ge nanorod enhanced infrared detector;
FIG. 2 is a flow chart of a process for fabricating an enhanced infrared detector with Si-GeSi-Ge nano-pillars;
FIG. 3 is a step-by-step annealing flow chart of the Si-GeSi-Ge nanorod enhanced infrared detector manufacturing process;
reference numerals:
a first electrode 101,
A Si-based infrared detector 102,
Si-GeSi-Ge nano-columns 103,
A second electrode 104.
Detailed Description
The infrared detector and the preparation method thereof in the first aspect of the embodiment of the invention comprise a first electrode 101; a Si-based infrared detector 102, the Si-based infrared detector 102 being connected to the first electrode 101; the Si-GeSi-Ge nano column 103 comprises a Ge shell layer and a GeSi intermediate layer, and the Si-GeSi-Ge nano column 103 is connected with the Si-based infrared detector 102; and a second electrode 104, wherein the second electrode 104 is connected with the Si-GeSi-Ge nanorod 103. The first electrode 101 is a back electrode, the second electrode 104 is annular, and the Ge shell layer has a strong metal property and can form good interface contact with the metal electrode, so that the extraction efficiency of a photon-generated carrier of the device is improved; meanwhile, the whole external bias electric field can be distributed more uniformly, and the transfer path of the photon-generated carriers can be shortened. The Si-GeSi-Ge nanopillars 103 may function as an antireflective film, while their quantum effects may help to improve the absorption efficiency of light. Si and Ge can form a good heterojunction, and the absorption efficiency of light is improved.
Further, in some embodiments of the invention, the shape of the Si-GeSi-Ge nanopillars 103 is circular or hexagonal, the diameter of the Si-GeSi-Ge nanopillars 103 is 50-800nm, the center-to-center distance between adjacent Si-GeSi-Ge nanopillars 103 is 150-1600nm, and the height of the Si-GeSi-Ge nanopillars 103 is 50-500 nm; the thickness of the Ge shell layer is 5-50nm, and the thickness of the GeSi intermediate layer is 1-5 nm. The Ge shell layer has stronger metal property, can form good interface contact with a metal electrode, and improves the extraction efficiency of a photon-generated carrier of the device; meanwhile, the whole external bias electric field can be distributed more uniformly, and the transfer path of the photon-generated carriers can be shortened. The Si-GeSi-Ge nanopillars 103 may function as an antireflective film, and the quantum effect thereof may help to improve the absorption efficiency of light.
In an embodiment according to the second aspect of the present invention, the Si-GeSi-Ge nanopillar 103 further comprises a heterojunction between Si and Ge. The absorption efficiency of light is improved.
In some embodiments of the present invention, the infrared detector and the method for manufacturing the same according to the above first aspect of the present invention are utilized. The method comprises the following steps:
s201: spin-coating a photoresist, and uniformly spin-coating a layer of photoresist on the infrared light incidence surface on the Si-based infrared detector 102 by using a spin coater;
s202: exposing, namely exposing and developing by using a photoetching machine;
s203: wet etching, namely etching by adopting a corrosive solution to obtain a Si nano-pillar array;
s204: cleaning, removing the photoresist, and cleaning the etching solution;
s205: preparing a Ge film, namely evaporating and plating the Ge film on the Si nano-column array by using a film plating machine;
s206: step annealing, including crystallization and infiltration;
s207: evaporating an electrode: and evaporating electrodes on the back and the front respectively, and alloying to obtain the Si-GeSi-Ge nano column 103 enhanced infrared detector. The Ge shell layer has stronger metal property, can form good interface contact with a metal electrode, and improves the extraction efficiency of a photon-generated carrier of the device; meanwhile, the whole external bias electric field can be distributed more uniformly, and the transfer path of the photon-generated carriers can be shortened. The Si-GeSi-Ge nano-pillars 103/prismatic table can play a role of an antireflection film, and meanwhile, the quantum effect of the film can help to improve the absorption efficiency of light. Si and Ge can form a good heterojunction, and the absorption efficiency of light is improved.
In some embodiments of the present invention, the Ge thin film has a thickness of 5-50 nm.
In some embodiments of the invention, the step annealing comprises:
s301: crystallizing, namely heating the Ge film for one time and preserving heat for one time to completely crystallize the Ge film;
s302: and (4) infiltrating, and heating and annealing the Ge film for the second time.
The invention also provides the following specific preparation examples, wherein the primary heating comprises heating to 300 ℃ at the speed of 5 ℃/min or heating to 400 ℃ at the speed of 10 ℃/min.
The invention also provides the following specific preparation embodiment, wherein the primary heat preservation is to preserve the heat of the Ge film for 30 minutes.
The invention also provides the following specific preparation examples, wherein the secondary heating comprises heating to 600 ℃ at the speed of 20 ℃/min or heating to 900 ℃ at the speed of 50 ℃/min.
The invention also provides the following specific preparation embodiment, wherein the annealing after the secondary temperature rise comprises the following steps: if the temperature of the secondary heating is raised to 600 ℃ at the rate of 20 ℃, annealing for 120 minutes; and if the temperature of the second heating is increased to 900 ℃ at the rate of 50 ℃, annealing for 30 minutes.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (9)
1. An infrared detector, comprising:
a first electrode;
the Si-based infrared detector is connected with the first electrode;
the Si-GeSi-Ge nano column comprises a Ge shell layer and a GeSi intermediate layer, and is connected with the Si-based infrared detector;
a second electrode connected to the Si-GeSi-Ge nanopillar;
the infrared detector is prepared by the following steps:
spin-coating a photoresist, and uniformly spin-coating a layer of photoresist on the infrared light incidence surface of the Si-based infrared detector on the Si-based infrared detector;
exposing, and carrying out exposure development on the Si-based infrared detector;
wet etching, namely etching by adopting a corrosive solution to obtain a Si nano-pillar array;
cleaning, removing the photoresist, and cleaning the etching solution;
preparing a Ge film, namely evaporating and plating a Ge film on the Si nano-pillar array;
step-by-step annealing, including crystallization, heating the Ge film for one time and preserving heat for one time to completely crystallize and infiltrate the Ge film, and heating and annealing the Ge film for the second time;
and evaporating an electrode, and alloying to obtain the Si-GeSi-Ge nano-column enhanced infrared detector.
2. An infrared detector according to claim 1, characterized in that: the Si-GeSi-Ge nano columns are circular or hexagonal in shape, the diameter of each Si-GeSi-Ge nano column is 50-800nm, the center distance between every two adjacent Si-GeSi-Ge nano columns is 150-1600nm, and the height of each Si-GeSi-Ge nano column is 50-500 nm; the thickness of the Ge shell layer is 5-50nm, and the thickness of the GeSi intermediate layer is 1-5 nm.
3. An infrared detector according to claim 1, characterized in that: the Si-GeSi-Ge nanorod further comprises a heterojunction, and the heterojunction is located between the Si and the Ge.
4. A method of manufacturing an infrared detector as claimed in any one of claims 1 to 3, comprising the steps of:
spin-coating a photoresist, and uniformly spin-coating a layer of photoresist on the infrared light incidence surface of the Si-based infrared detector on the Si-based infrared detector;
exposing, and carrying out exposure development on the Si-based infrared detector;
wet etching, namely etching by adopting a corrosive solution to obtain a Si nano-pillar array;
cleaning, removing the photoresist, and cleaning the etching solution;
preparing a Ge film, namely evaporating and plating a Ge film on the Si nano-pillar array;
step-by-step annealing, including crystallization, heating the Ge film for one time and preserving heat for one time to completely crystallize and infiltrate the Ge film, and heating and annealing the Ge film for the second time;
and evaporating an electrode, and alloying to obtain the Si-GeSi-Ge nano-column enhanced infrared detector.
5. The method for manufacturing an infrared detector according to claim 4, wherein: the thickness of the Ge film is 5-50 nm.
6. The method for manufacturing an infrared detector according to claim 4, wherein: the primary heating comprises heating to 300 ℃ at a rate of 5 ℃/min or heating to 400 ℃ at a rate of 10 ℃/min.
7. The method for manufacturing an infrared detector according to claim 6, wherein: and the primary heat preservation is to preserve the heat of the Ge film for 30 minutes.
8. The method for manufacturing an infrared detector according to claim 4, wherein: the secondary heating comprises heating to 600 ℃ at a rate of 20 ℃/min or to 900 ℃ at a rate of 50 ℃/min.
9. The method for manufacturing an infrared detector according to claim 8, wherein: the annealing after the secondary temperature rise comprises the following steps:
if the temperature of the secondary heating is raised to 600 ℃ at the rate of 20 ℃, annealing for 120 minutes;
and if the temperature of the second heating is increased to 900 ℃ at the rate of 50 ℃, annealing for 30 minutes.
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