CN104505429A - Photolithographic process applied to crystalline silicon solar cells - Google Patents
Photolithographic process applied to crystalline silicon solar cells Download PDFInfo
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- CN104505429A CN104505429A CN201410671298.9A CN201410671298A CN104505429A CN 104505429 A CN104505429 A CN 104505429A CN 201410671298 A CN201410671298 A CN 201410671298A CN 104505429 A CN104505429 A CN 104505429A
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 230000008569 process Effects 0.000 title claims abstract description 43
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 171
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 171
- 239000010703 silicon Substances 0.000 claims abstract description 171
- 238000006243 chemical reaction Methods 0.000 claims abstract description 36
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 25
- 239000011248 coating agent Substances 0.000 claims abstract description 11
- 238000000576 coating method Methods 0.000 claims abstract description 11
- 238000007689 inspection Methods 0.000 claims abstract description 11
- 238000005507 spraying Methods 0.000 claims abstract description 11
- 238000001259 photo etching Methods 0.000 claims description 43
- 230000035484 reaction time Effects 0.000 claims description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 23
- 239000013078 crystal Substances 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 21
- 239000008367 deionised water Substances 0.000 claims description 18
- 238000013036 cure process Methods 0.000 claims description 16
- 230000005684 electric field Effects 0.000 claims description 11
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 7
- 238000011161 development Methods 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 4
- 238000007781 pre-processing Methods 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 abstract 1
- 230000006872 improvement Effects 0.000 description 11
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910018030 Cu2Te Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000002156 adsorbate Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention discloses a photolithographic process applied to crystalline silicon solar cells, comprising: pre-processing a front surface of a silicon wafer, coating a photoresist to the front surface of the silicon wafer in a rotating manner, performing a soft baking process on the silicon wafer, using an exposing machine to align and expose the silicon wafer, performing a post baking process on the silicon wafer, spraying a developing solution onto the surface of the silicon wafer, performing a hard baking process on the silicon wafer via an infrared light, performing a developing inspection, etching the surface of the silicon wafer by introducing CF4 gas, removing the photoresist, inspecting and finishing the photolithographic process. The photolithographic process of the present invention forms a complete and uniform antireflection texturized surface on the surface of the silicon wafer, prolongs the transmission path of sunlight on the surface of a cell, increases the sunlight absorption efficiency of the cell and improves the cell conversion efficiency.
Description
Technical field
The present invention relates to technical field of solar batteries, particularly relate to a kind of photoetching process being applied to crystal silicon solar batteries.
Background technology
Solar cell is that one absorbs solar radiant energy effectively, utilize photovoltaic effect that transform light energy is become the device of electric energy, when solar irradiation is in semiconductor P-N junction (P-N Junction), form new hole-electron to (V-E pair), under the effect of P-N junction electric field, hole flows to P district by N district, and electronics flows to N district by P district, just forms electric current after connecting circuit.Owing to being the solid semiconductor device utilizing the photovoltaic effect of various potential barrier solar energy to be converted to electric energy, therefore also known as solar cell or photovoltaic cell, be the significant components of solar array power-supply system.Solar cell mainly contains crystal silicon (Si) battery, three or five race semi-conductor cell (GaAs, Cds/Cu2S, Cds/CdTe, Cds/InP, CdTe/Cu2Te), without machine battery, organic battery etc., wherein crystal silicon solar batteries occupies market mainstream leading position.The stock of crystal silicon solar batteries is that purity reaches 99.9999%, resistivity at the p type single crystal silicon of 10 more than Ω-cm, comprise the parts such as front matte, front p-n junction, front surface antireflection film, positive backplate.Being front in component package adds printing opacity cover plate (glass as saturating in height and EVA) protection by plane of illumination, prevents battery to be subject to the radiation damage of high energy electron and proton in the Van Allen belt of outer space.
Conventional solar cell, on silicon chip surface, is all adopt wet-method etching technology usually, owing to using wet-method etching surface texturing techniques, controls poor, therefore cannot obtain more complete conforming suede structure for suede structure.
Summary of the invention
Technical problem to be solved by this invention is, provides a kind of photoetching process being applied to crystal silicon solar batteries, can form complete conforming antireflection matte at silicon chip surface.
In order to solve the problems of the technologies described above, the invention provides a kind of photoetching process being applied to crystal silicon solar batteries, comprising:
A. carry out preliminary treatment to the front of silicon chip, described preliminary treatment comprises successively: carry out elevated pressure nitrogen gas blowout to silicon chip surface and sweep, and silicon chip is put into HF solution and soaks, by washed with de-ionized water, silicon chip is put into HCL solution to soak, by washed with de-ionized water, dry;
B. to the front coating photoresist of silicon chip;
C. soft baking process is carried out to silicon chip;
D. use exposure machine aim at silicon chip and expose, the power of exposure machine is 200-1000W, and the time for exposure is 1-50 second;
E. cure process after being carried out by silicon chip, stoving temperature is 80-150 DEG C, and the time of curing is 10-100 second;
F. at the surface sprinkling developer solution of silicon chip;
G. firmly cure process by infrared lamp to silicon chip, irradiation time is 5-20 minute;
H. to develop inspection;
I. CF is passed into
4gas etches silicon chip surface, and gas flow is 20-100sccm, and reaction pressure is 2-10Pa, and the reaction time is 2-20 minute;
J. photoresist is removed;
K. check, complete photoetching, the front of silicon chip forms photoetching matte;
L. film and positive electrode is penetrated at the front of silicon chip formation N-type emitter, passivated reflection reducing;
M. back of the body electric field and back electrode is formed at the back side of silicon chip;
N. high temperature sintering, forms solar cell.
As the improvement of such scheme, in steps A, described preliminary treatment comprises successively:
Carry out elevated pressure nitrogen gas blowout to silicon chip surface to sweep;
Silicon chip is put into HF solution to soak, reaction temperature 25-30 DEG C, reaction time 30-60 second;
By washed with de-ionized water;
Silicon chip is put into HCL solution to soak, reaction temperature 25-30 DEG C, reaction time 30-60 second;
By washed with de-ionized water;
By spraying into the vaporific hmds of hot nitrogen pressurization by silicon chip drying, reaction temperature 120-150 DEG C.
As the improvement of such scheme, in step B, be coated with photoresist to the front of silicon chip by rotation mode, working speed is 1000-5000rpm, and coating duration is 5-60 second, and photoresist is that chemistry amplifies the positive glue of photoetching.
As the improvement of such scheme, in step D, the power of exposure machine is 500-600W, and the time for exposure is 6-10 second.
As the improvement of such scheme, the width of the light shield of described exposure machine and the ratio of height are 0.3-0.8:2.5-3.5.
As the improvement of such scheme, the light shield of described exposure machine is circular along the cross section of horizontal direction, and diameter is 0.3-0.8 μm.
As the improvement of such scheme, in step e, after to cure process be realize by being placed on heated plate by silicon chip, stoving temperature is 100-110 DEG C, and the time of curing is 30-60 second.
As the improvement of such scheme, in step F, spray developer solution on the surface of silicon chip by spraying continuously or rotating, working speed is 300-500rpm.
As the improvement of such scheme, in step G, the distance of infrared lamp distance silicon chip is 5-6 centimetre, and irradiation time is 8-10 minute.
As the improvement of such scheme, in step I, CF
4the gas flow of gas is 40-60sccm, and reaction pressure is 4-6Pa, and the reaction time is 6-8 minute.
Implement the present invention, there is following beneficial effect:
The invention provides a kind of photoetching process being applied to crystal silicon solar batteries, photo-etching processes is a kind of Graphic transitions process of multi-step, is first form required figure on mask plate, afterwards by photoetching process by required Graphic transitions to silicon chip surface.Graphic transitions must by two steps, first, figure is transferred to photoresist layer, photoresist self property and structure after overexposure change and (become non-solubility material from original solable matter, or it is contrary), by developer solution, soluble part is removed again, finally obtain the on all four pattern with design configuration.Therefore, when described photoetching process is applied to crystal silicon solar batteries, have the following advantages:
(1) in preprocessing process, use HF can eliminate the organic contamination of silicon chip surface, use HCL can eliminate the metal impurities of silicon chip surface;
(2) utilize photo-etching processes can remove the mechanical damage layer of silicon chip surface, replace traditional wet acid system etching;
(3) complete conforming antireflection matte is formed at silicon chip surface, extend the propagation path of sunlight at battery surface, increase battery to the absorptivity of sunlight, reduce reflection, increase PN junction area, improve short circuit current (Isc), such that short-circuit current density promotes, series resistance significantly reduces, finally improve battery conversion efficiency (Eff)+0.55% (absolute value);
(4) photoetching process is applicable to industrialization large-scale production.
Accompanying drawing explanation
Fig. 1 is the flow chart of photoetching process of the present invention;
Fig. 2 is the mask set figure of photoetching process of the present invention;
Fig. 3 is the close-up schematic view in the A portion of Fig. 2;
Fig. 4 is the vertical view of light shield shown in Fig. 2;
Fig. 5 is the front view of light shield shown in Fig. 2;
Fig. 6 is the left view of light shield shown in Fig. 2;
Fig. 7 is the structural representation of crystal silicon solar batteries of the present invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the present invention is described in further detail.
See Fig. 1, the invention provides a kind of photoetching process being applied to crystal silicon solar batteries, comprising:
S101, preliminary treatment is carried out to the front of silicon chip.
Described silicon chip is preferably P-type silicon, and described preliminary treatment comprises successively: (1) is carried out elevated pressure nitrogen gas blowout to silicon chip surface and swept; (2) silicon chip is put into HF solution to soak, reaction temperature is preferably 25-30 DEG C, and the reaction time is preferably 30-60 second; (3) by washed with de-ionized water; (4) silicon chip is put into HCL solution to soak, reaction temperature is preferably 25-30 DEG C, and the reaction time is preferably 30-60 second; (5) by washed with de-ionized water; (6) dry: this baking step can be undertaken by the vaporific hmds spraying into hot nitrogen pressurization, and reaction temperature is preferably 120-150 DEG C.
The advantage that preliminary treatment brings is: (1) removes the dirty and adsorbate in surface, improves surface cleanliness; (2) HF can eliminate the organic contamination of silicon chip surface; (3) HCL can eliminate the metal impurities of silicon chip surface; (4) photoresist surface-clinging ability is increased.
S102, by rotation mode, photoresist is coated with to the front of silicon chip.
Wherein, photoresist is that chemistry amplifies the positive glue of photoetching, and working speed is preferably 1000-5000rpm, and coating duration is preferably 5-60 second.Better, working speed is 2000-3000rpm, and coating duration is 15-25 second.
It should be noted that, chemically-amplified resist (CAR, Chemical Amplified Resist) is the photoresist that one is applicable to deep UV (DUV) wavelength.
S103, soft baking process is carried out to silicon chip.
Concrete, soft baking process silicon chip is placed on mobile belt IR bake, reaction temperature 50-100 DEG C, and the time of curing is 10-15 second.
S104, use exposure machine are aimed at silicon chip and expose.
The power of exposure machine is preferably 200-1000W, and the time for exposure is preferably 1-50 second.Better, the power of exposure machine is 500-600W, and the time for exposure is 6-10 second.
As shown in Figures 2 to 6, light shield is roughly in bowl structure, and light shield is circular along the cross section of horizontal direction, and diameter is preferably 0.3-1 μm for the light shield of exposure machine.Light shield is roughly U-shaped along the cross section of vertical direction, is highly preferably 2.5-3.5 μm.
Further, the width of light shield and the ratio of height are 0.3-0.8:2.5-3.5, can increase photon internal refraction, strengthen short wave response, make battery surface absorb more photoelectrons, promote conversion efficiency.Better, the width of light shield and the ratio of height are 0.5:3.
S105, silicon chip is carried out after cure process.
Preferably, after to cure process be realize by being placed on heated plate by silicon chip, stoving temperature is 80-150 DEG C, and the time of curing is 10-100 second.Better, stoving temperature is 100-110 DEG C, and the time of curing is 30-60 second.
S106, surface sprinkling developer solution at silicon chip.
Concrete, on the surface of silicon chip by spraying continuously or automatic rotation technology spray developing liquid, working speed is 300-500rpm.Developer solution can select TMAH developer solution, but is not limited thereto.
It should be noted that, TMAH is Tetramethylammonium hydroxide.
S107, by infrared lamp, firmly process is cured to silicon chip.
Preferably, the distance of infrared lamp distance silicon chip is 3-10 centimetre, and irradiation time is 5-20 minute.Better, the distance of infrared lamp distance silicon chip is 5-6 centimetre, and irradiation time is 8-10 minute.
S108, development inspection.
This development inspection can be realized by development range estimation, and object distinguishes those wafers having very low possibility to be checked by final mask, but be not limited thereto.
S109, pass into CF
4gas etches silicon chip surface.
Preferably, CF
4the gas flow of gas is 20-100sccm, and reaction pressure is 2-10Pa, and the reaction time is 2-20 minute; Better, CF
4the gas flow of gas is 40-60sccm, and reaction pressure is 4-6Pa, and the reaction time is 6-8 minute.
S110, removal photoresist.
S111, inspection, complete photoetching, and the front of silicon chip forms photoetching matte.
S112, form N-type emitter in the front of silicon chip, passivated reflection reducing penetrates film and positive electrode.
Wherein, N-type emitter diffuses to form preferably by phosphorus oxychloride, and passivated reflection reducing is penetrated film and is preferably silicon nitride layer, and positive electrode is preferably silver electrode.
S113, form back of the body electric field and back electrode at the back side of silicon chip.
Back of the body electric field is preferably aluminium electric field, and back electrode is preferably silver electrode.
S114, high temperature sintering, form solar cell.
The finished product of solar cell as shown in Figure 7, comprises back electrode 1 from the bottom to top successively, back of the body electric field 2, P-type silicon 3, photoetching matte 4, N-type emitter 5, passivated reflection reducing penetrates film 6 and positive electrode 7.Photoetching matte is located on the front of P-type silicon 3, and is connected with N-type emitter 5.
The crystal silicon solar batteries adopting photoetching process to make, has the following advantages: (1), in preprocessing process, uses HF can eliminate the organic contamination of silicon chip surface, uses HCL can eliminate the metal impurities of silicon chip surface; (2) mechanical damage layer of silicon chip surface is removed; (3) complete conforming antireflection matte is formed at silicon chip surface, extend the propagation path of sunlight at battery surface, increase battery to the absorptivity of sunlight, reduce reflection, increase PN junction area, improve short circuit current (Isc), such that short-circuit current density promotes, series resistance significantly reduces, finally improve battery conversion efficiency (Eff)+0.55% (absolute value).
The present invention is set forth further below with specific embodiment
Embodiment 1
A. preliminary treatment is carried out to the front of silicon chip, comprise successively: (a) carries out elevated pressure nitrogen gas blowout to silicon chip surface and sweep; B silicon chip is put into HF solution and is soaked by (), reaction temperature is 25 DEG C, and the reaction time is 30 seconds; C () uses washed with de-ionized water; D silicon chip is put into HCL solution and is soaked by (), reaction temperature is 25 DEG C, and the reaction time is 30 seconds; E () uses washed with de-ionized water; F () is dried by the vaporific hmds spraying into hot nitrogen pressurization, reaction temperature is 120 DEG C;
B. be coated with photoresist to the front of silicon chip by rotation mode, working speed is 1000rpm, and coating duration is 5 seconds;
C. soft baking process is carried out to silicon chip;
D. use exposure machine aim at silicon chip and expose, the power of exposure machine is 200W, and the time for exposure is 5 seconds;
E. be placed in by silicon chip after heated plate carries out and cure process, stoving temperature is 80 DEG C, and the time of curing is 10 seconds;
F. at the surface sprinkling developer solution of silicon chip;
G. firmly cure process by infrared lamp to silicon chip, the distance of infrared lamp distance silicon chip is 3 centimeters, and irradiation time is 5 minutes;
H. to develop inspection;
I. CF is passed into
4gas etches silicon chip surface, and gas flow is 20sccm, and reaction pressure is 2Pa, and the reaction time is 2 minutes;
J. photoresist is removed;
K. check, complete photoetching, the front of silicon chip forms photoetching matte;
L. film and positive electrode is penetrated at the front of silicon chip formation N-type emitter, passivated reflection reducing;
M. back of the body electric field and back electrode is formed at the back side of silicon chip;
N. high temperature sintering, forms solar cell.
Embodiment 2
A. preliminary treatment is carried out to the front of silicon chip, comprise successively: (a) carries out elevated pressure nitrogen gas blowout to silicon chip surface and sweep; B silicon chip is put into HF solution and is soaked by (), reaction temperature is 26 DEG C, and the reaction time is 40 seconds; C () uses washed with de-ionized water; D silicon chip is put into HCL solution and is soaked by (), reaction temperature is 26 DEG C, and the reaction time is 40 seconds; E () uses washed with de-ionized water; F () is dried by the vaporific hmds spraying into hot nitrogen pressurization, reaction temperature is 130 DEG C;
B. be coated with photoresist to the front of silicon chip by rotation mode, working speed is 2000rpm, and coating duration is 20 seconds;
C. soft baking process is carried out to silicon chip;
D. use exposure machine aim at silicon chip and expose, the power of exposure machine is 500W, and the time for exposure is 6 seconds;
E. be placed in by silicon chip after heated plate carries out and cure process, stoving temperature is 100 DEG C, and the time of curing is 30 seconds;
F. at the surface sprinkling developer solution of silicon chip;
G. firmly cure process by infrared lamp to silicon chip, the distance of infrared lamp distance silicon chip is 5 centimeters, and irradiation time is 10 minutes;
H. to develop inspection;
I. CF is passed into
4gas etches silicon chip surface, and gas flow is 40sccm, and reaction pressure is 4Pa, and the reaction time is 7 minutes;
J. photoresist is removed;
K. check, complete photoetching, the front of silicon chip forms photoetching matte;
L. film and positive electrode is penetrated at the front of silicon chip formation N-type emitter, passivated reflection reducing;
M. back of the body electric field and back electrode is formed at the back side of silicon chip;
N. high temperature sintering, forms solar cell.
Embodiment 3
A. preliminary treatment is carried out to the front of silicon chip, comprise successively: (a) carries out elevated pressure nitrogen gas blowout to silicon chip surface and sweep; B silicon chip is put into HF solution and is soaked by (), reaction temperature is 28 DEG C, and the reaction time is 50 seconds; C () uses washed with de-ionized water; D silicon chip is put into HCL solution and is soaked by (), reaction temperature is 28 DEG C, and the reaction time is 50 seconds; E () uses washed with de-ionized water; F () is dried by the vaporific hmds spraying into hot nitrogen pressurization, reaction temperature is 140 DEG C;
B. be coated with photoresist to the front of silicon chip by rotation mode, working speed is 3000rpm, and coating duration is 30 seconds;
C. soft baking process is carried out to silicon chip;
D. use exposure machine aim at silicon chip and expose, the power of exposure machine is 600W, and the time for exposure is 15 seconds;
E. be placed in by silicon chip after heated plate carries out and cure process, stoving temperature is 110 DEG C, and the time of curing is 50 seconds;
F. at the surface sprinkling developer solution of silicon chip;
G. firmly cure process by infrared lamp to silicon chip, the distance of infrared lamp distance silicon chip is 6 centimeters, and irradiation time is 10 minutes;
H. to develop inspection;
I. CF is passed into
4gas etches silicon chip surface, and gas flow is 60sccm, and reaction pressure is 6Pa, and the reaction time is 8 minutes;
J. photoresist is removed;
K. check, complete photoetching, the front of silicon chip forms photoetching matte;
L. film and positive electrode is penetrated at the front of silicon chip formation N-type emitter, passivated reflection reducing;
M. back of the body electric field and back electrode is formed at the back side of silicon chip;
N. high temperature sintering, forms solar cell.
Embodiment 4
A. preliminary treatment is carried out to the front of silicon chip, comprise successively: (a) carries out elevated pressure nitrogen gas blowout to silicon chip surface and sweep; B silicon chip is put into HF solution and is soaked by (), reaction temperature is 30 DEG C, and the reaction time is 60 seconds; C () uses washed with de-ionized water; D silicon chip is put into HCL solution and is soaked by (), reaction temperature is 30 DEG C, and the reaction time is 60 seconds; E () uses washed with de-ionized water; F () is dried by the vaporific hmds spraying into hot nitrogen pressurization, reaction temperature is 150 DEG C;
B. be coated with photoresist to the front of silicon chip by rotation mode, working speed is 4000rpm, and coating duration is 60 seconds;
C. soft baking process is carried out to silicon chip;
D. use exposure machine aim at silicon chip and expose, the power of exposure machine is 800W, and the time for exposure is 30 seconds;
E. be placed in by silicon chip after heated plate carries out and cure process, stoving temperature is 120 DEG C, and the time of curing is 60 seconds;
F. at the surface sprinkling developer solution of silicon chip;
G. firmly cure process by infrared lamp to silicon chip, the distance of infrared lamp distance silicon chip is 8 centimeters, and irradiation time is 15 minutes;
H. to develop inspection;
I. CF is passed into
4gas etches silicon chip surface, and gas flow is 80sccm, and reaction pressure is 8Pa, and the reaction time is 20 minutes;
J. photoresist is removed;
K. check, complete photoetching, the front of silicon chip forms photoetching matte;
L. film and positive electrode is penetrated at the front of silicon chip formation N-type emitter, passivated reflection reducing;
M. back of the body electric field and back electrode is formed at the back side of silicon chip;
N. high temperature sintering, forms solar cell.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.
Claims (10)
1. be applied to a photoetching process for crystal silicon solar batteries, it is characterized in that, comprising:
A, carry out preliminary treatment to the front of silicon chip, described preliminary treatment comprises successively: carry out elevated pressure nitrogen gas blowout to silicon chip surface and sweep, and silicon chip is put into HF solution and soaks, and by washed with de-ionized water, silicon chip is put into HCL solution and soaks, and by washed with de-ionized water, dries;
B, to the front of silicon chip coating photoresist;
C, soft baking process is carried out to silicon chip;
D, use exposure machine are aimed at silicon chip and expose, and the power of exposure machine is 200-1000W, and the time for exposure is 1-50 second;
E, silicon chip is carried out after cure process, stoving temperature is 80-150 DEG C, and the time of curing is 10-100 second;
F, surface sprinkling developer solution at silicon chip;
G, firmly cure process by infrared lamp to silicon chip, irradiation time is 5-20 minute;
H, development inspection;
I, pass into CF
4gas etches silicon chip surface, and gas flow is 20-100sccm, and reaction pressure is 2-10Pa, and the reaction time is 2-20 minute;
J, removal photoresist;
K, inspection, complete photoetching, and the front of silicon chip forms photoetching matte;
L, form N-type emitter in the front of silicon chip, passivated reflection reducing penetrates film and positive electrode;
M, form back of the body electric field and back electrode at the back side of silicon chip;
N, high temperature sintering, form solar cell.
2. be applied to the photoetching process of crystal silicon solar batteries as claimed in claim 1, it is characterized in that, in steps A, described preliminary treatment comprises successively:
Carry out elevated pressure nitrogen gas blowout to silicon chip surface to sweep;
Silicon chip is put into HF solution to soak, reaction temperature 25-30 DEG C, reaction time 30-60 second;
By washed with de-ionized water;
Silicon chip is put into HCL solution to soak, reaction temperature 25-30 DEG C, reaction time 30-60 second;
By washed with de-ionized water;
By spraying into the vaporific hmds of hot nitrogen pressurization by silicon chip drying, reaction temperature 120-150 DEG C.
3. be applied to the photoetching process of crystal silicon solar batteries as claimed in claim 1, it is characterized in that, in step B, by rotation mode, photoresist is coated with to the front of silicon chip, working speed is 1000-5000rpm, and coating duration is 5-60 second, and photoresist is that chemistry amplifies the positive glue of photoetching.
4. be applied to the photoetching process of crystal silicon solar batteries as claimed in claim 1, it is characterized in that, in step D, the power of exposure machine is 500-600W, and the time for exposure is 6-10 second.
5. be applied to the photoetching process of crystal silicon solar batteries as claimed in claim 4, it is characterized in that, the width of the light shield of described exposure machine and the ratio of height are 0.3-0.8:2.5-3.5.
6. be applied to the photoetching process of crystal silicon solar batteries as claimed in claim 5, it is characterized in that, the light shield of described exposure machine is circular along the cross section of horizontal direction, and diameter is 0.3-0.8 μm.
7. be applied to the photoetching process of crystal silicon solar batteries as claimed in claim 1, it is characterized in that, in step e, after to cure process be realize by being placed on heated plate by silicon chip, stoving temperature is 100-110 DEG C, and the time of curing is 30-60 second.
8. be applied to the photoetching process of crystal silicon solar batteries as claimed in claim 1, it is characterized in that, in step F, spray developer solution on the surface of silicon chip by spraying continuously or rotating, working speed is 300-500rpm.
9. be applied to the photoetching process of crystal silicon solar batteries as claimed in claim 1, it is characterized in that, in step G, the distance of infrared lamp distance silicon chip is 5-6 centimetre, and irradiation time is 8-10 minute.
10. be applied to the photoetching process of crystal silicon solar batteries as claimed in claim 1, it is characterized in that, in step I, CF
4the gas flow of gas is 40-60sccm, and reaction pressure is 4-6Pa, and the reaction time is 6-8 minute.
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