CN112018099A - Ultraviolet LED device capable of quickly dissipating heat and manufacturing method thereof - Google Patents
Ultraviolet LED device capable of quickly dissipating heat and manufacturing method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/645—Heat extraction or cooling elements the elements being electrically controlled, e.g. Peltier elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/648—Heat extraction or cooling elements the elements comprising fluids, e.g. heat-pipes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
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- General Physics & Mathematics (AREA)
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Abstract
The invention discloses a rapid heat dissipation ultraviolet LED device and a manufacturing method thereof, wherein the manufacturing method comprises the following steps: s10, manufacturing the LED module: manufacturing a ceramic base: manufacturing a ceramic base by using a ceramic material, wherein the ceramic base comprises a plurality of rows of grooves; manufacturing a metal frame: cutting a metal sheet into a plurality of metal strips, wherein the metal strips are arranged in parallel at intervals to form a metal frame; assembling the LED module: connecting a metal frame on the ceramic base, fixing the LED chip array on the metal frame, and carrying out air-tight packaging; s20, electric connection: the groove of the LED module is communicated with the liquid guide pipe, the groove and the liquid guide pipe are filled with electrolyte to form a sealed loop, the peristaltic pump and the power supply are connected, and the electrolyte circularly flows in the sealed loop and is electrically connected with the LED module. The LED device aims to solve the technical problems of low conductivity reliability and low heat dissipation efficiency of the existing LED device.
Description
Technical Field
The invention belongs to the field of semiconductor devices, and particularly relates to an ultraviolet LED device capable of quickly dissipating heat and a manufacturing method thereof.
Background
The UVC LED has low photoelectric conversion efficiency, most energy is converted into heat to be emitted, the UVC LED has higher junction temperature requirement and fast thermal attenuation, and a copper-clad aluminum nitride ceramic bracket with high thermal conductivity is mainly adopted in the current industry. Traditional UVC LED heat dissipation relies on perpendicular heat sink, and the heat is transmitted copper pad, aluminium nitride, SET wainscot tin cream layer, base plate by UVC LED chip, is the radiating element at last, need pass through 5 interfaces, in high-power UVC LED device, and this heat dissipation mode is more and more unable satisfy the requirement.
In order to increase the power of the UVC LED device, the size and the number of chips of the device must be increased, but two problems may occur in the manufacturing process of the LED device as follows: (1) the size of a device is increased, input current needs to be increased, and at present, both DPC (copper-clad laminate) and HTCC (high temperature copper-clad laminate) process aluminum nitride supports adopt a via hole (through hole and micropore) process for electrical connection, so that in a peak value reflow process or a eutectic soldering process in the device packaging process, abnormalities such as via hole protrusion and the like can occur due to high temperature, and failure can also occur easily along with the increase of the use current. The via hole process is complex, the processing cost is high, the size cannot be increased, and the via hole cannot be designed near a chip, so that a more reliable aluminum nitride substrate electric connection method with better conductivity is urgently needed in a high-power UVC LED device; (2) the size of a device is increased, the mode of one support with one chip is changed into the mode of one support with a plurality of chips, more light emitting designs and light reflecting designs are needed, light emitted by one UVC LED chip is prevented from entering other UVC LED chips and the mutual influence between each UVC LED chip is avoided, the existing copper-clad aluminum nitride support reflects UVC light mainly by a gold-plated surface, gold is plated on the surface of a copper material, copper grows through electroplating, but a light reflecting inclined plane with a certain shape grows through electroplating, the cost is high, and therefore a low-cost support manufacturing method for improving the light emitting efficiency of each chip is urgently needed.
Disclosure of Invention
Aiming at the defects or the improvement requirements of the prior art, the invention provides a rapid heat dissipation ultraviolet LED device and a manufacturing method thereof, and aims to solve the technical problems of low conductivity reliability and low heat dissipation efficiency of the existing LED device.
To achieve the above object, according to one aspect of the present invention, there is provided a rapid heat dissipation ultraviolet LED device, including:
s10, manufacturing the LED module: manufacturing a ceramic base: manufacturing a ceramic material into a ceramic base, wherein the ceramic base comprises a plurality of rows of grooves; manufacturing a metal frame: cutting a metal sheet into a plurality of metal strips, wherein the metal strips are arranged in parallel at intervals to form a metal frame; assembling the LED module: connecting the metal frame to the ceramic base, fixing the LED chip array on the metal frame, and carrying out air-tight packaging; s20, electric connection: and communicating the groove of the LED module with the liquid guide pipe, filling electrolyte into the groove and the liquid guide pipe to form a sealed loop, and connecting a power supply to realize the electrical connection with the LED module.
Preferably, the catheter includes a first tube and a second tube, and the step S20 includes: connecting the first port of the first pipeline to one end of the groove, and connecting the first port of the second pipeline to the other end of the groove; a power supply and a peristaltic pump are connected to the catheter; inserting the second port of the first pipeline and the second port of the second pipeline below the liquid level of a container filled with electrolyte, and starting the peristaltic pump to fill the groove and the liquid guide pipe with the electrolyte; and connecting the first pipeline with the second pipeline, and taking out the first pipeline and the second pipeline to form a sealed loop.
Preferably, the number of the LED modules is plural, and the step S20 includes: connecting a sealing ring at the port of the groove of the adjacent LED module, and locking the edges of all the LED devices through a locking clamp; communicating the liquid guide pipe with the grooves of the two LED modules on the outermost side, and connecting a power supply and a peristaltic pump to the liquid guide pipe; and loosening the locking clamp, putting all the LED modules below the liquid level of the electrolyte container, starting the peristaltic pump to fill the electrolyte into the groove and the liquid guide pipe, locking the locking clamp, and taking out the LED modules to form a sealed loop.
Preferably, the metal frame is made of any one or more of silver, copper, gold, aluminum, chromium, magnesium, calcium, sodium, tungsten, zinc, potassium, nickel, iron, tin, lead and mercury, and the electrolyte is any one or more of copper sulfate, sodium chloride and potassium chloride.
Preferably, the step S20 further includes connecting a cold row of a metal block structure to the catheter.
Preferably, in step S10, the manufacturing the ceramic base includes: stamping a thin blank of a mixture of a ceramic material and an additive by using a prefabricated die to form the groove, and sintering the groove in a high-temperature furnace to form the ceramic base; the sintering temperature is 1400-1600 ℃, and the sintering pressure is 200-300 Mpa.
Preferably, a CNC (computerized numerical control) processing method or a die-sinking pouring method is adopted to manufacture the inverted trapezoidal groove array on the surface of the metal sheet, and then the metal sheet is cut into a plurality of metal strips.
Preferably, the size of the bottom surface of the inverted trapezoidal groove is 1.4-1.6 times of the size of a single LED chip.
Preferably, in step S10, before the step of attaching the metal frame to the ceramic base, the method further includes: and plating a eutectic layer on the surface of the ceramic base, wherein the eutectic layer is made of any one of copper, nickel, gold and gold-tin alloy.
According to another aspect of the present invention, there is provided a rapid heat dissipation ultraviolet LED device, including: the LED module comprises a ceramic base, a metal frame and an LED chip array; a plurality of rows of grooves are formed in the ceramic base, the metal frame is arranged on the ceramic base and comprises a plurality of rows of metal strips crossing over the grooves, gaps exist between every two adjacent metal strips, and the LED chips in the LED chip array are arranged above the gaps and located between the adjacent metal strips; the liquid guide pipe and the groove are in electric communication with the power supply through filling electrolyte.
In general, compared with the prior art, the above technical solution contemplated by the present invention can achieve the following beneficial effects:
(1) the invention provides a manufacturing method of a rapid heat dissipation ultraviolet LED device, which avoids the traditional through hole punching and copper filling mode of a ceramic base during electric connection, and avoids the through hole process with high cost and poor reliability. Meanwhile, as the metal strip connected with the LED module is directly contacted with the electrolyte, the LED device manufactured by the method provided by the invention has greatly reduced heat conduction interface and higher heat dissipation efficiency compared with the prior art.
(2) The manufacturing method of the metal frame comprises the step of manufacturing the inverted trapezoidal groove array on the surface of the metal sheet by adopting a CNC (computerized numerical control) processing method or a die sinking pouring method, so that the periphery of each LED chip is provided with the groove surface for reflecting light, the metal frame with the structure can prevent light emitted by one inverted LED chip from being emitted into other inverted LED chips, the light utilization rate of each inverted LED chip is improved, and the light emitting efficiency of a neat device is further improved. And the preparation method of the metal frame has low cost.
(3) The manufacturing method of the LED module avoids the copper electroplating dam enclosing process which is high in cost and difficult in manufacturing inclination angle, and the manufacturing method is simpler. Meanwhile, the invention omits the SMT (surface mount technology) process, avoids one-time thermal shock, and reduces the probability of failure caused by secondary heating of the product (after the UVC flip LED chip is subjected to die bonding in the traditional mode, the product can be subjected to one-time thermal shock in the lens packaging process, and can be subjected to one-time thermal shock in the SMT chip mounting process).
(4) According to the ultraviolet LED device capable of quickly dissipating heat, the conductive electrolyte circularly flows, meanwhile, the cold bar is connected during the manufacturing of the LED device, the temperature of the electrolyte flowing into the device after the electrolyte is subjected to the cold bar is low, the traditional vertical heat sink can be replaced by the electrolyte liquid cooling, the heat dissipation efficiency is further increased, and the working temperature of the LED device is reduced to be lower than the room temperature.
Drawings
FIG. 1 is a schematic structural diagram corresponding to each step of the manufacturing method in the manufacturing of the LED module;
FIG. 2 is a cross-sectional view of an LED module;
FIG. 3 is a top view of an LED module;
FIG. 4 is a schematic diagram of an electrical connection structure of an embodiment of a rapid heat dissipation ultraviolet LED device;
FIG. 5 is a schematic diagram of an electrical connection structure of another embodiment of a rapid heat dissipation ultraviolet LED device;
FIG. 6 is a schematic view of the structure of a single metal strip in a metal frame;
FIG. 7 is a schematic structural view of a cold row;
the same reference numbers will be used throughout the drawings to refer to the same or like elements or structures, wherein:
1-an LED module; 2-a ceramic base; 3-a metal frame; 4-LED chip; 5-a lens; 6-a groove; 7-cold discharging; 8-a peristaltic pump; 9-a power supply; 10-a catheter; 11-a sealing ring; 12-locking clips; 13-a semiconductor refrigerator; 14-a heat sink; 15-a first threaded connection; 16-a second threaded connection; 17-a cold discharge flow channel; 18-ribs.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The invention provides a method for manufacturing a rapid heat dissipation ultraviolet LED device, which comprises the following steps of S10, manufacturing an LED module: manufacturing a ceramic base: manufacturing a ceramic material into a ceramic base, wherein the ceramic base comprises a plurality of rows of grooves; manufacturing a metal frame: cutting a metal sheet into a plurality of metal strips, wherein the metal strips are arranged in parallel at intervals to form a metal frame; assembling the LED module: connecting the metal frame to the ceramic base, fixing the LED chip array on the metal frame, and carrying out air-tight packaging; s20, electric connection: and communicating the groove of the LED module with the liquid guide pipe, filling electrolyte into the groove and the liquid guide pipe to form a sealed loop, and connecting a power supply to realize the electrical connection with the LED module.
The manufacturing method avoids the mode of punching through holes on the ceramic base and filling the through holes with copper when the LED device prepared by the traditional method is electrically connected, and avoids the through hole process with high cost and poor reliability. Meanwhile, as the metal strip connected with the LED module is directly contacted with the electrolyte, the LED device manufactured by the method provided by the invention has greatly reduced heat conduction interface and higher heat dissipation efficiency compared with the prior art.
Example 1
As shown in fig. 1, the method for manufacturing a rapid heat dissipation ultraviolet LED device provided by the present invention specifically includes:
s10: manufacturing the LED module:
s101: manufacture of ceramic base
S1011, taking a thin aluminum nitride blank, punching the blank into an assembly having a shape of a plurality of rows of grooves 6 as shown in fig. 1 by using a prefabricated die, wherein the grooves 6 are used for the circulation of the electrolyte. Then sintering in a high-temperature sintering furnace to obtain the ceramic base 2, wherein the thickness of the bottom surface of the ceramic base is 300-600 um, and the total height of the ceramic base is 1200-2000 um; wherein the sintering temperature is 1400-1600 ℃, and the sintering pressure is 200-300 Mpa.
Preferably, the method for manufacturing the aluminum nitride thin blank sheet comprises the following steps: mixing amorphous alumina and carbon powder under the condition of nitrogen by adopting a carbothermic method, and carrying out an oxidation-reduction reaction at 1400-1800 ℃ to prepare aluminum nitride powder; taking aluminum nitride powder, mixing the aluminum nitride powder with additives such as an organic binding agent, a plasticizer, a suspending agent, a wetting agent and the like in a solvent to form uniform and stable suspended slurry, enabling the slurry to flow onto a base band from the lower part of a hopper during forming, forming a blank film through relative motion between the base band and a scraper, controlling the thickness of the blank film by the scraper, then sending the blank film and the base band to a drying chamber for drying, and forming a grid structure among ceramic particles by the organic binding agent after the solvent is evaporated to form an aluminum nitride blank sheet with certain strength and toughness;
preferably, the method further comprises plating a eutectic layer on the surface of the ceramic base 2, wherein the material of the eutectic layer comprises any one of copper, nickel, gold and gold-tin alloy. The method specifically comprises the following steps: a photoetching process is adopted, the part which does not need to be coated is covered by photoresist, and 0.5-3 um of metal Cu, 2-3 um of metal Ni and 0.05-1 um of metal Au0.05-1 um are sequentially sputtered on the frame of the aluminum nitride base and the subsequent area where the metal strip needs to be placed by a magnetron sputtering technology, as shown in S1012 in the figure 1; and finally, evaporating the AuSn alloy by using an electron beam evaporation technology, as shown in S1013 in the figure 1, so as to prevent the sputtered metal Cu from being oxidized, wherein the thickness of the sputtered metal Cu is 3-10 um.
S102: making metal racks
The manufacturing method comprises the steps of taking a copper sheet with the thickness of 600-1200 um, and etching an inverted trapezoidal groove array on the surface of the metal sheet by using a CNC (computer numerical control) machining method, wherein the structure of the inverted trapezoidal groove array is shown in figure 6, each metal strip comprises a bottom plate and a plurality of protruding strips 18 arranged above the bottom plate, and the light emitting angle of an LED chip is adjusted through the protruding strips so as to improve the light emitting efficiency of a device. Preferably, the metal strip is integrally formed, and the manufacturing process is simple and low in cost. Wherein, each groove can contain an LED chip, and the raised strips 18 surround the LED chips; preferably, the cross-sectional area of the ribs 18 is gradually narrowed away from the bottom surface, which is more favorable for preventing light emitted from one of the flip-chip LED chips from entering the other flip-chip LED chips and improving the light utilization efficiency. Preferably, the cross section of the convex strip 18 is triangular or trapezoidal, and the light emitting effect is better. The size of the bottom surface of the inverted trapezoidal groove is 1.4-1.6 times of the size of a single LED chip, and the light emitting effect under the condition is better; or opening the die, designing the die into a required shape, and forming the metal sheet with the patterned surface by adopting a pouring process. Finally, the metal sheet is cut into metal strips by a water jet, and the metal strips are arranged in parallel at intervals to form a copper metal frame 3. Through the metal frame with the structure, light emitted by one LED chip can be prevented from entering other LED chips, the light utilization rate of each LED chip is improved, and the light emitting efficiency of the tidying device is further improved. And the preparation method of the metal frame has low cost.
Preferably, the metal sheet may be made of any one or more of silver, gold, aluminum, chromium, magnesium, calcium, sodium, tungsten, zinc, potassium, nickel, iron, tin, lead and mercury.
Preferably, the method also comprises the step of carrying out surface treatment on the metal strip, and plating Ni 3-5um and Au 0.03-0.1um in an electrochemical plating mode to form a protective layer to prevent the metal from being oxidized.
S103: LED module assembly
S1031: welding metal strips, placing the ceramic base 2 on a metal carrier plate, wherein the surface of the metal carrier plate is covered with a double-sided film, and the bottom surface of the ceramic base 1 is fixed on the double-sided film. The die bonder sucks the metal strips by adopting two suction heads or four suction heads, sequentially places the metal strips at corresponding positions of the ceramic base 2, and welds the metal strips to the ceramic base 2 by adopting a hot-pressing eutectic process or a spot-coating soldering flux vacuum eutectic process, namely, the metal frame 3 is connected to the ceramic base 2;
s1032: die bonding, namely assuming that the LED chip of the embodiment is a UVC LED chip, sucking the LED chip 4 to the grooves of the two metal strips by using a suction nozzle of a die bonder, and fixing the LED chip 4 by using a hot-pressing eutectic process or a spot soldering flux vacuum eutectic process;
s1303: the method comprises the following steps that a lens sealing cover is used for covering a quartz lens 5 with a gold-tin alloy plated at the edge of the bottom surface, the quartz lens 5 is sucked on a frame of a ceramic base 2 by a suction nozzle of an eutectic machine to be just clamped, the gold-tin alloy at the edge of the bottom surface of the quartz lens 5 is directly contacted with a metal coating of the frame of the ceramic base 2, the quartz lens 5 is welded on the ceramic base 2 by adopting a hot-pressing eutectic process or a spot-coating soldering flux vacuum eutectic process, the air-tight packaging of an LED chip is completed, and a completely packaged; or printing solder paste on the top of the edge of the ceramic base 2, sucking the solder paste on the frame of the ceramic base 2 by using a suction nozzle of an eutectic machine, and completing the airtight packaging of the lens by adopting a reflow soldering process to obtain a completely packaged LED module;
s20: electrical connection
Selecting electrolyte according to the magnitude of resistivity, preferably copper sulfate solution with low resistivity, and the resistivity is 0.01890 omega mm2And/m. Preferably, the electrolyte can also be other electrolytes, such as sodium chloride solution, and the resistivity is 0.0672 omega mm2M, potassium chloride solution, resistivity of 0.069. omega. mm2/m。
As shown in fig. 4, each device has N +1 grooves 6 if there are N rows of chips, N +1 rubber catheters 10 are selected, each catheter 10 includes a first pipeline and a second pipeline, a first port of the first pipeline is adhered to one end of the groove 6, and is sequentially connected with a power supply 9, a peristaltic pump 8 and a cold row 7, and a first port of the second pipeline is connected to the other end of the groove 6; inserting the second port of the first pipeline and the second port of the second pipeline below the liquid level of the container filled with the electrolyte, starting the peristaltic pump 8, and filling the groove 6 and the catheter 10 with the electrolyte by utilizing suction force; the first and second pipes are connected by the first and second screw-threaded portions 15 and 16, and then the first and second pipes are taken out, by which all the liquid guide tubes 10 are filled with the electrolyte and a sealed circuit is formed. Because the process of irritating liquid and the connection process (forming sealed loop process promptly) of first pipeline and second pipeline all go on below the liquid level of electrolyte container for the device during operation, be full of electrolyte always in the slot 6, electrolyte and metal frame 3 fully contact promptly, avoid appearing not irritating and can't realize the phenomenon of electricity intercommunication fully. Wherein, the access mode of the power supply 9 specifically is as follows: the double number of liquid guide pipes are arranged in a row, from the row head, positive electrode rods are inserted into the odd number of liquid guide pipes, negative electrode rods are inserted into the even number of liquid guide pipes, the positive electrode rods are connected with the positive electrode of the power supply 9, and the negative electrode rods are connected with the negative electrode of the power supply 9. A power supply 9 applies a certain voltage between the two electrodes to realize circuit conduction.
As shown in fig. 7, the cold row 13 is a metal block structure, a cold row flow channel 17 communicated with the liquid guide tube 10 is arranged in the cold row 13, and the electrolyte flows in the cold row flow channel 17; the top of the refrigerator is provided with a semiconductor refrigerator 13, and/or the lower part of the refrigerator is provided with a finned radiator 14 for enlarging the radiating area, so that the radiating effect can be enhanced. The temperature of the electrolyte flowing into the device after the electrolyte passes through the cold discharge 7 is low, the traditional vertical heat sink can be replaced by the liquid cooling of the electrolyte, the heat dissipation efficiency is further increased, and the working temperature of the LED device is reduced to be lower than the room temperature.
When the liquid level is lower than the liquid level of the electrolyte, the first pipe and the second pipe may be connected by other means than a screw, as long as the sealing property is ensured.
S30: work by
Opening a switch of a peristaltic pump 8, enabling electrolyte to flow in a pipeline in a circulating mode, and enabling the temperature of the electrolyte flowing into the LED module to be 12-15 ℃ through a cold row 13; the power supply 9 is connected with the electrolyte through the gold-plated electrode, so that a set potential difference exists between electrolyte pipelines connected with the LED module, and the UVC LED chip is electrically conducted. When the UVC LED chip works, a large amount of heat is emitted and absorbed by the electrolyte, the electrolyte is heated to promote the movement of ions and reduce the resistivity of the electrolyte, so that the conductivity is enhanced, and the output optical power of the UVC LED chip is improved.
Example 2
The difference between this embodiment and embodiment 1 lies in that the electrical connection process is different, specifically:
selecting N +1 rubber liquid guide pipes 10, connecting sealing rings 11 at the ports of the grooves 6 of the adjacent LED modules 1, and locking the edges of all LED devices through locking clamps 12; the liquid guide tube 10 is communicated with the grooves 6 of the two LED modules 1 at the outermost side, and a power supply 9, a peristaltic pump 8 and a cold row 7 are connected to the liquid guide tube 10;
and loosening the locking clamp 12, putting all the LED modules below the liquid level of the electrolyte container, starting the peristaltic pump 8 to fill the electrolyte into the groove 6 and the liquid guide pipe 10, locking the locking clamp 12, and taking out the LED modules to form a sealed loop.
As shown in fig. 5, one end of the liquid guide tube 10 is adhered to the first liquid guide port (i.e. one end of the groove) of the first UVC LED module, and then the power supply 9, the peristaltic pump 8 and the cold row 7 are connected in sequence, and the other end is adhered to the second liquid guide port (i.e. one end of the groove) of the second UVC LED package device, and then the rubber sealing ring 11 with a size matched with the size of the port of the groove 6 is adhered to the second liquid guide port (i.e. the other end of the groove) of the first UVC LED module; aligning a sealing ring of a second liquid guide port of the first UVC LED module with a second liquid guide port (namely the other end of a groove) of a second UVC LED packaging device, and locking the edges of the first UVC LED module and the second UVC LED module by using a locking clamp 12 to form a complete loop; the opening and closing locking clamp 12 is loosened, the first UVC LED module, the second UVC LED module and the locking clamp 12 are all inserted below the liquid level of the electrolyte container, the peristaltic pump 8 is started, the electrolyte is sucked to fill the flow path by suction, then the locking clamp 12 is locked, and the first UVC LED module, the second UVC LED module and the locking clamp 12 are taken out of the electrolyte, so that all the rubber liquid guide pipes 10 are filled with the electrolyte and a sealed loop is formed.
Example 3
As shown in fig. 2 and fig. 3, the present invention provides a fast heat dissipation ultraviolet LED device, which includes an LED module 1, a power supply 9 and a liquid guide tube 10, wherein the LED module 1 includes a ceramic base 2, a metal frame 3 and an LED chip array; a plurality of rows of grooves 6 are formed in the ceramic base 2, the metal frame 3 is arranged on the ceramic base 2, the metal frame 3 comprises a plurality of rows of metal strips crossing over the grooves 6, gaps exist between the adjacent metal strips, and the LED chips 4 in the LED chip array are arranged above the gaps and are positioned between the adjacent metal strips; the catheter 10 and the channel 6 are in electrical communication with the power source by being filled with electrolyte.
The quick heat dissipation ultraviolet LED device realizes the electric connection of the LED chip through the electrolyte, the contact area of the metal strip connected with the LED module and the electrolyte is large, and the heat generated by the LED module can be continuously taken away through the circulating flow of the electrolyte, so that the LED module is high in working reliability and good in heat dissipation effect.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. A manufacturing method of a rapid heat dissipation ultraviolet LED device is characterized by comprising the following steps:
s10, manufacturing the LED module:
manufacturing a ceramic base: manufacturing a ceramic material into a ceramic base, wherein the ceramic base comprises a plurality of rows of grooves;
manufacturing a metal frame: cutting a metal sheet into a plurality of metal strips, wherein the metal strips are arranged in parallel at intervals to form a metal frame;
assembling the LED module: connecting the metal frame to the ceramic base, fixing the LED chip array on the metal frame, and carrying out air-tight packaging;
s20, electric connection: and communicating the groove of the LED module with the liquid guide pipe, filling electrolyte into the groove and the liquid guide pipe to form a sealed loop, and connecting a power supply to realize the electrical connection with the LED module.
2. The method for manufacturing a rapid heat dissipation ultraviolet LED device as claimed in claim 1, wherein the liquid guiding tube comprises a first tube and a second tube, and the step S20 includes:
connecting the first port of the first pipeline to one end of the groove, and connecting the first port of the second pipeline to the other end of the groove; a power supply and a peristaltic pump are connected to the catheter;
inserting the second port of the first pipeline and the second port of the second pipeline below the liquid level of a container filled with electrolyte, and starting the peristaltic pump to fill the groove and the liquid guide pipe with the electrolyte;
and connecting the first pipeline with the second pipeline, and taking out the first pipeline and the second pipeline to form a sealed loop.
3. The method for manufacturing the rapid heat dissipation ultraviolet LED device according to claim 1, wherein the number of the LED modules is plural, and the step S20 includes:
connecting a sealing ring at the port of the groove of the adjacent LED module, and locking the edges of all the LED devices through a locking clamp; communicating the liquid guide pipe with the grooves of the two LED modules on the outermost side, and connecting a power supply and a peristaltic pump to the liquid guide pipe;
and loosening the locking clamp, putting all the LED modules below the liquid level of the electrolyte container, starting the peristaltic pump to fill the electrolyte into the groove and the liquid guide pipe, locking the locking clamp, and taking out the LED modules to form a sealed loop.
4. The method for manufacturing the rapid heat dissipation ultraviolet LED device as claimed in any one of claims 1 to 3, wherein the metal frame is made of any one or more of silver, copper, gold, aluminum, chromium, magnesium, calcium, sodium, tungsten, zinc, potassium, nickel, iron, tin, lead and mercury, and the electrolyte is any one or more of copper sulfate, sodium chloride and potassium chloride.
5. The method of claim 1, wherein the step S20 further comprises connecting a cold row of a metal block structure to the liquid guide tube.
6. The method for manufacturing a rapid heat dissipation ultraviolet LED device as claimed in claim 1, wherein in step S10, the manufacturing the ceramic base includes: stamping a thin blank sheet of a ceramic material by using a prefabricated die to form the groove, and sintering the groove in a high-temperature furnace to form the ceramic base; the sintering temperature is 1400-1600 ℃, and the sintering pressure is 200-300 Mpa.
7. The method for manufacturing a rapid heat dissipation ultraviolet LED device as claimed in claim 1, wherein in the step S10, the manufacturing the metal strip includes: and manufacturing an inverted trapezoidal groove array on the surface of the metal sheet by adopting a CNC (computerized numerical control) processing method or a die sinking pouring method, and then cutting the metal sheet into a plurality of metal strips.
8. The method according to claim 7, wherein the size of the bottom surface of the inverted trapezoidal groove is 1.4 to 1.6 times the size of a single LED chip.
9. The method for manufacturing a rapid heat dissipation ultraviolet LED device as recited in claim 1, wherein in step S10, before the step of attaching the metal frame to the ceramic base, the method further comprises: and plating a eutectic layer on the surface of the ceramic base, wherein the eutectic layer is made of any one of copper, nickel, gold and gold-tin alloy.
10. A rapid heat dissipation ultraviolet LED device, comprising: the LED module comprises a ceramic base, a metal frame and an LED chip array; a plurality of rows of grooves are formed in the ceramic base, the metal frame is arranged on the ceramic base and comprises a plurality of rows of metal strips crossing over the grooves, gaps exist between every two adjacent metal strips, and the LED chips in the LED chip array are arranged above the gaps and located between the adjacent metal strips; the liquid guide pipe and the groove are in electric communication with the power supply through filling electrolyte.
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