CN111933784A - Ceramic packaging method of laser chip and ceramic packaging chip structure - Google Patents
Ceramic packaging method of laser chip and ceramic packaging chip structure Download PDFInfo
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- CN111933784A CN111933784A CN202010937718.9A CN202010937718A CN111933784A CN 111933784 A CN111933784 A CN 111933784A CN 202010937718 A CN202010937718 A CN 202010937718A CN 111933784 A CN111933784 A CN 111933784A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 87
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 88
- 229910052751 metal Inorganic materials 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 34
- 238000005476 soldering Methods 0.000 claims abstract description 20
- WSNMPAVSZJSIMT-UHFFFAOYSA-N COc1c(C)c2COC(=O)c2c(O)c1CC(O)C1(C)CCC(=O)O1 Chemical compound COc1c(C)c2COC(=O)c2c(O)c1CC(O)C1(C)CCC(=O)O1 WSNMPAVSZJSIMT-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000003466 welding Methods 0.000 claims abstract description 8
- 238000005520 cutting process Methods 0.000 claims abstract description 7
- 230000000694 effects Effects 0.000 claims abstract description 7
- 238000009713 electroplating Methods 0.000 claims abstract description 4
- 238000001704 evaporation Methods 0.000 claims abstract description 4
- 230000008020 evaporation Effects 0.000 claims abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 2
- 238000010583 slow cooling Methods 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 claims 4
- 230000017525 heat dissipation Effects 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
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- 239000004332 silver Substances 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention belongs to the technical field of semiconductors, and provides a ceramic packaging method of a laser chip, which comprises the following steps: providing a ceramic substrate, and forming a through hole to obtain a structure I; a patterned photoresist layer is formed on one surface of the structure I, and then evaporation or electroplating is carried out to plate a metal layer to obtain a structure II; a patterned photoresist layer is also made on the other surface of the structure II, and then a metal layer is plated to obtain a structure III; carrying out photoresist stripping on the structure III, and removing the photoresist layer to obtain a structure IV; cutting the structure IV into a plurality of heat sink units; and welding the laser chip on the metal layer of one heat conduction area of the heat sink unit by using a soldering lug, then routing, and respectively connecting the anode and the cathode of the laser chip to the metal layer of the electrode area of the heat sink unit. The preparation method is simple, and the prepared ceramic packaging chip structure has smaller packaging volume and greatly improved heat dissipation effect, thereby effectively improving the performance and the service life of the laser chip.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a ceramic packaging method and a ceramic packaging chip structure of a laser chip.
Background
As a novel light source, the semiconductor LED has the incomparable advantages of energy conservation, environmental protection, long service life, high starting speed, capability of controlling a light-emitting spectrum and prohibiting the size of a band so as to enable the traditional light source to have higher chroma and the like, has good development prospect and continuously expands the application field. LED (semiconductor light emitting diode) packaging refers to packaging of a light emitting chip, and compared with packaging of an integrated circuit, the packaging is greatly different, the packaging function is to provide enough protection for the chip, the chip is prevented from being exposed in the air for a long time or from being failed due to mechanical damage, so that the stability of the chip is improved, good light extraction efficiency and good heat dissipation performance are required, and the good packaging can enable the LED to have better light emitting efficiency and heat dissipation environment, so that the service life of the LED is prolonged.
At present, LED's encapsulation is mostly the TO encapsulation, and is bulky, the radiating effect is poor, and plug-in installation, it is inconvenient TO install, and high power LED's ceramic package at present, adopt pottery as the heat sink, the welding material that the chip bonding used has been restricted, glue such as silver glue is adhered TO ceramic heat sink with the chip usually, but the cured layer heat conductivity of glue formation is not good, can hinder the heat-conduction between chip and the ceramic heat sink, the radiating effect remains further TO be improved, furthermore, under the environment of being heated, the cured layer adhesive strength that the glue formed easily weakens, lead TO combining strength poor, can take place the separation between chip and ceramic heat sink even. Therefore, the development of a ceramic packaging method of a laser chip and a ceramic packaging chip structure not only have urgent research values, but also have good economic benefits and industrial application potentials, which are the basis and the impetus for the completion of the invention.
Disclosure of Invention
The present inventors have conducted intensive studies to overcome the above-identified drawbacks of the prior art, and as a result, have completed the present invention after having made a great deal of creative efforts.
Specifically, the technical problems to be solved by the present invention are: the ceramic packaging method and the ceramic packaging chip structure of the laser chip are provided to solve the technical problems that the existing laser chip packaging device is large in size, poor in heat dissipation effect and influences the chip performance.
In order to solve the technical problems, the technical scheme of the invention is as follows:
a ceramic packaging method of a laser chip comprises the following steps:
s1, providing a ceramic substrate, and forming a through hole on the ceramic substrate to obtain a structure I;
s2, forming a photoresist layer on one surface of the structure I, patterning the photoresist layer through exposure and development processes, wherein the patterned photoresist layer is positioned on one side of the through hole, then performing evaporation or electroplating on one surface of the ceramic substrate with the patterned photoresist layer, and plating a metal layer to obtain a structure II;
s3, repeating the step S2, forming a graphical photoresist layer on the other surface of the structure II, and then plating a metal layer to obtain a structure III with both surfaces plated with metal layers, wherein the metal layers at the positions of the through holes are connected through the through holes;
s4, carrying out photoresist stripping on the structure III through a photoresist stripping process, and removing the photoresist layer to obtain a structure IV;
s5, cutting the structure IV into a plurality of heat sink units, wherein the metal layers on the two sides of each heat sink unit are correspondingly arranged and comprise a middle heat conduction area and electrode areas on the two sides, and the metal layers on the electrode areas on the two sides of the ceramic substrate are respectively connected through the through holes;
and S6, welding the laser chip on the metal layer of one heat conducting area of the heat sink unit by using a soldering lug, then routing, and respectively connecting the anode and the cathode of the laser chip to the metal layer of the electrode area of the heat sink unit by using metal wires.
As an improved technical solution, in step S1, the ceramic substrate is an AlN-based ceramic substrate with a thickness of 200-.
In step S2, the metal layer is a combination of Cr, Al, Ti, Pt, Au or Ni, Al, Ti, Pt, Au, and the thickness of the metal layer is 40-60 μm.
As an improved technical solution, in step S6, the soldering lug is placed between the laser chip and the metal layer of the heat conducting area, the soldering lug is a preformed gold-tin soldering lug of Au80% and Sn20%, the soldering lug is melted by a reflow soldering technique and using nitrogen as a protective gas under the conditions of 280-.
As an improved technical solution, in step S6, the metal wire is a 40-60 μm gold wire, the laser chip is connected to the metal layer in the electrode area through the metal wire, and the positive and negative electrodes of the laser chip are respectively transferred to the metal layer in the two electrode areas on the back of the heat sink unit.
The invention also discloses a ceramic packaging chip structure which is manufactured by the method and comprises a ceramic substrate, wherein the two end parts of the ceramic substrate are respectively provided with the through holes, the two surfaces of the ceramic substrate are respectively plated with a metal layer, the metal layers comprise a middle heat conduction area and an electrode area arranged at the position of the through holes, the heat conduction area and the electrode area are respectively provided with a separation distance, the metal layers of the electrode areas on the two surfaces of the ceramic substrate are respectively connected through the through holes, a laser chip is fixedly welded on the metal layer of one electrode area, and the positive electrode and the negative electrode of the laser chip are respectively connected with the metal layers of the electrode areas through metal wires.
As an improved technical scheme, four through holes are formed in the ceramic substrate, and the four through holes are respectively and correspondingly arranged at two end parts of the ceramic substrate.
As an improved technical scheme, the thickness of the ceramic substrate is 300 microns, the thickness of the metal layer is 50 microns, and the laser chip is fixedly connected with the metal layer of the heat conduction area through a gold-tin soldering sheet.
After the technical scheme is adopted, the invention has the beneficial effects that:
the ceramic packaging method of the laser chip is simple in preparation method, high-efficiency preparation of the heat sink unit can be achieved, and the prepared ceramic packaging chip structure is smaller in packaging volume compared with a traditional TO packaging device, the positive electrode and the negative electrode of the laser chip are converted TO the back of the ceramic substrate through routing and the metal layer of the electrode area and can be used through surface-mount welding.
Drawings
In order to more clearly illustrate the detailed description of the invention or the technical solutions in the prior art, the drawings that are needed in the detailed description of the invention or the prior art will be briefly described below. Throughout the drawings, like elements or portions are generally identified by like reference numerals. In the drawings, elements or portions are not necessarily drawn to scale.
FIG. 1 is a flow chart of a ceramic packaging method for a laser chip according to the present invention;
FIG. 2 is a schematic structural view of a ceramic substrate according to the present invention;
FIG. 3 is a schematic structural view of structure I of the present invention;
FIG. 4 is a schematic diagram of a structure of forming a photoresist layer on one side of the structure I according to the present invention;
FIG. 5 is a schematic structural view of structure II of the present invention;
FIG. 6 is a schematic structural view of structure III of the present invention;
FIG. 7 is a schematic diagram of structure IV of the present invention;
fig. 8 is a schematic structural diagram of a heat sink unit of the present invention;
FIG. 9 is a schematic structural diagram of a ceramic packaged chip according to the present invention;
reference numerals: 1-a ceramic substrate; 101-a through hole; 2-a photoresist layer; 3-a metal layer; 4-laser chip; 5-wire.
Detailed Description
The invention is further illustrated by the following specific examples. The use and purpose of these exemplary embodiments are to illustrate the present invention, not to limit the actual scope of the present invention in any way, and not to limit the scope of the present invention in any way.
As shown in fig. 1, the present embodiment provides a ceramic packaging method for a laser chip 4, which includes the following steps:
step S1: a ceramic substrate 1 is provided, and a through hole 101 is opened on the ceramic substrate 1, so as to obtain a structure I, as shown in fig. 2 and 3.
In the step, the ceramic substrate 1 is an AlN-based ceramic substrate, the AlN-based ceramic substrate has better heat-conducting property and better heat-dissipating effect than alumina, and the thickness of the ceramic substrate 1 is 200-500 μm, in the embodiment, the thickness of the ceramic substrate 1 is 300 μm.
In this step, a plurality of through holes 101 are provided, and at least two of the through holes 101 are correspondingly provided, and the correspondingly provided through holes 101 are respectively located at two end portions of the post-cutting heat sink unit, and the equipment and the process for opening the ceramic substrate 1 are well known to those skilled in the art and are not described herein again.
Step S2: forming a photoresist layer 2 on one side of the structure I, patterning the photoresist layer 2 through an exposure and development process, wherein the patterned photoresist layer 2 is located on one side of the through hole 101, as shown in fig. 4, and then performing evaporation or electroplating on the side of the ceramic substrate 1 having the patterned photoresist layer 2, and plating a metal layer 3 to obtain a structure II, as shown in fig. 5.
In this step, patterning the photoresist is a conventional process, which is not described herein, the metal layer 3 is a Cr, Al, Ti, Pt, Au or a combination structure of Ni, Al, Ti, Pt, Au metals, and the thickness of the metal layer 3 is 40-60 μm, in this embodiment, the thickness of the metal layer 3 is 50 μm.
Step S3: repeating the step S2, forming a patterned photoresist layer 2 on the other surface of the structure II, and then plating a metal layer 3 to obtain a structure III with both surfaces plated with the metal layer 3, wherein the metal layers 3 at the positions of the through holes 101 are connected through the through holes 101, as shown in fig. 6.
In this step, when the metal layer 3 is plated, metal is plated in the through hole 101, so as to connect the metal layers 3 on both sides of the ceramic substrate 1.
Step S4: and (3) carrying out photoresist stripping on the structure III through a photoresist stripping process, and removing the photoresist layer 2 to obtain a structure IV, as shown in FIG. 7.
In this step, when the photoresist is stripped, the metal layer 3 plated on the photoresist is removed along with the stripping of the photoresist, leaving the metal layer 3 plated on the ceramic substrate 1.
Step S5: cutting the structure IV into a plurality of heat sink units, as shown in fig. 8, the metal layers 3 on both sides of each heat sink unit are correspondingly disposed, and each metal layer 3 includes a middle heat conduction area and electrode areas on both sides, and the metal layers 3 on the electrode areas on both sides of the ceramic substrate 1 are respectively connected through the through holes 101.
In this step, it is well known to those skilled in the art that a cutting device is used to cut the ceramic substrate 1, and details are not described herein, the cut single heat sink unit is used to implement the encapsulation of the laser chip 4, and the heat conduction area in the middle of the heat sink unit is the most thick area of the metal layer 3, so as to implement effective heat conduction and heat dissipation.
Step S6: the laser chip 4 is welded to the metal layer 3 of one of the heat conducting areas of the heat sink unit by using a soldering lug, then routing is carried out, and the anode and the cathode of the laser chip 4 are respectively connected to the metal layer 3 of the electrode area of the heat sink unit by using metal wires 5, as shown in fig. 9.
In the step, when the laser chip 4 is welded on the heat sink unit, the soldering lug is placed between the laser chip 4 and the metal layer 3 of the heat conducting area, the soldering lug is a preformed gold-tin soldering lug of Au80% and Sn20%, the soldering lug is melted under the conditions of 280 plus materials, 320 ℃ and 5-30s by using a reflow soldering technology and nitrogen as protective gas, and then the bonding effect is achieved by a slow cooling mode, so that the laser chip 4 is welded and fixed on the heat sink unit.
In this embodiment, the temperature for welding the laser chip 4 is controlled to be about 300 ℃, the heating time is 25s, the gold-tin soldering lug can be effectively melted, and the efficient welding of the laser chip 4 is realized.
In the step, the metal wire 5 is a 40-60 μm gold wire, the laser chip 4 is connected with the metal layer 3 of the electrode area through the metal wire 5, and the anode and the cathode of the laser chip 4 are respectively transferred to the metal layer 3 of the two electrode areas on the back of the heat sink unit, so that the use of surface mounting is facilitated.
The invention also provides a ceramic packaged chip structure, as shown in fig. 9, which is manufactured by the above manufacturing method, the ceramic packaged chip structure is a packaged device finally obtained after step S6, and includes a ceramic substrate 1, through holes 101 are formed at both ends of the ceramic substrate 1, metal layers 3 are plated on both sides of the ceramic substrate 1, each metal layer 3 includes a middle heat conduction region and an electrode region arranged at the position of the through hole 101, a separation distance is respectively provided between the heat conduction region and the electrode region, the metal layers 3 of the electrode regions on both sides of the ceramic substrate 1 are respectively connected through the through holes 101, wherein a laser chip 4 is fixedly welded on the metal layer 3 of one electrode region, and the positive and negative electrodes of the laser chip 4 are respectively connected with the metal layers 3 of the electrode regions through metal wires 5.
In this embodiment, four through holes 101 are formed and are correspondingly disposed at two ends of the ceramic substrate 1, respectively, so as to ensure effective connection between the metal layers 3 in the electrode regions at two sides of the ceramic substrate 1.
In the ceramic package chip structure prepared by the preparation method in the embodiment, the thickness of the ceramic substrate 1 is 300 μm, the thickness of the metal layer 3 is 50 μm, and the laser chip 4 and the metal layer 3 in the heat conduction region are fixedly connected by the gold-tin soldering sheet, so that the heat conduction and heat dissipation performance is good.
The ceramic packaging method of the laser chip 4 based on the steps is simple in preparation method, the high-efficiency preparation of the heat sink unit can be realized, and the prepared ceramic packaging chip structure is characterized in that the anode and the cathode of the laser chip 4 are converted TO the back of the ceramic substrate 1 through routing and the metal layer 3 of the electrode area, and the ceramic packaging chip structure can be used through surface-mount welding.
It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. Further, it should also be understood that various alterations, modifications and/or variations can be made to the present invention by those skilled in the art after reading the technical content of the present invention, and all such equivalents fall within the protective scope defined by the claims of the present application.
Claims (8)
1. A ceramic packaging method of a laser chip is characterized by comprising the following steps:
s1, providing a ceramic substrate, and forming a through hole on the ceramic substrate to obtain a structure I;
s2, forming a photoresist layer on one surface of the structure I, patterning the photoresist layer through exposure and development processes, wherein the patterned photoresist layer is positioned on one side of the through hole, then performing evaporation or electroplating on one surface of the ceramic substrate with the patterned photoresist layer, and plating a metal layer to obtain a structure II;
s3, repeating the step S2, forming a graphical photoresist layer on the other surface of the structure II, and then plating a metal layer to obtain a structure III with both surfaces plated with metal layers, wherein the metal layers at the positions of the through holes are connected through the through holes;
s4, carrying out photoresist stripping on the structure III through a photoresist stripping process, and removing the photoresist layer to obtain a structure IV;
s5, cutting the structure IV into a plurality of heat sink units, wherein the metal layers on the two sides of each heat sink unit are correspondingly arranged and comprise a middle heat conduction area and electrode areas on the two sides, and the metal layers on the electrode areas on the two sides of the ceramic substrate are respectively connected through the through holes;
and S6, welding the laser chip on the metal layer of one heat conducting area of the heat sink unit by using a soldering lug, then routing, and respectively connecting the anode and the cathode of the laser chip to the metal layer of the electrode area of the heat sink unit by using metal wires.
2. The method for ceramic package of a laser chip as claimed in claim 1, wherein in step S1, the ceramic substrate is an AlN-based ceramic substrate with a thickness of 200-500 μm, the plurality of through holes are provided, and at least two of the plurality of through holes are disposed correspondingly, and the correspondingly disposed through holes are respectively located at two ends of the heat sink unit after cutting.
3. The ceramic packaging method of the laser chip according to claim 2, wherein in step S2, the metal layer is a combination of Cr, Al, Ti, Pt, Au or Ni, Al, Ti, Pt, Au, and has a thickness of 40-60 μm.
4. The method for ceramic packaging of a laser chip as claimed in claim 3, wherein in step S6, the solder pad is placed between the laser chip and the metal layer of the heat conducting area, the solder pad is a preformed Au80% and Sn20% solder pad, the solder pad is melted by reflow soldering technology and using nitrogen as a protective gas under the conditions of 280-320 ℃ and 5-30S, and then the bonding effect is achieved by slow cooling, so as to realize the soldering fixation of the laser chip on the heat sink unit.
5. The ceramic packaging method for the laser chip as claimed in claim 4, wherein in step S6, the metal wire is a 40-60 μm gold wire, the laser chip is connected to the metal layer in the electrode area through the metal wire, and the anode and the cathode of the laser chip are respectively transferred to the metal layer in the two electrode areas on the back of the heat sink unit.
6. A ceramic package chip structure is characterized by being manufactured by the method of claim 1, and comprising a ceramic substrate, wherein the through holes are formed in two end parts of the ceramic substrate, metal layers are plated on two surfaces of the ceramic substrate, each metal layer comprises a middle heat conduction area and an electrode area arranged at the position of the through hole, a separation distance is formed between each heat conduction area and each electrode area, the metal layers of the electrode areas on the two surfaces of the ceramic substrate are respectively connected through the through holes, a laser chip is fixedly welded on the metal layer of one electrode area, and the positive electrode and the negative electrode of the laser chip are respectively connected with the metal layers of the electrode areas through metal wires.
7. The ceramic packaged chip structure of claim 6, wherein: the number of the through holes is four, and the through holes are respectively and correspondingly arranged at two end parts of the ceramic substrate.
8. The ceramic packaged chip structure of claim 7, wherein: the thickness of the ceramic substrate is 300 microns, the thickness of the metal layer is 50 microns, and the laser chip is fixedly connected with the metal layer of the heat conduction area through a gold-tin soldering sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202010937718.9A CN111933784A (en) | 2020-09-09 | 2020-09-09 | Ceramic packaging method of laser chip and ceramic packaging chip structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010937718.9A CN111933784A (en) | 2020-09-09 | 2020-09-09 | Ceramic packaging method of laser chip and ceramic packaging chip structure |
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| CN111933784A true CN111933784A (en) | 2020-11-13 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113937614A (en) * | 2021-09-30 | 2022-01-14 | 温州泛波激光有限公司 | Low-thermal-resistance BAR packaging process |
| CN116598884A (en) * | 2023-07-14 | 2023-08-15 | 中国科学院半导体研究所 | Semiconductor laser and method for manufacturing the same |
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| US6531328B1 (en) * | 2001-10-11 | 2003-03-11 | Solidlite Corporation | Packaging of light-emitting diode |
| CN102237482A (en) * | 2010-05-07 | 2011-11-09 | 陈一璋 | High heat radiation LED (Light Emitting Diode) nonmetal substrate and high heat radiation LED element as well as making method thereof |
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2020
- 2020-09-09 CN CN202010937718.9A patent/CN111933784A/en active Pending
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| US6531328B1 (en) * | 2001-10-11 | 2003-03-11 | Solidlite Corporation | Packaging of light-emitting diode |
| CN102237482A (en) * | 2010-05-07 | 2011-11-09 | 陈一璋 | High heat radiation LED (Light Emitting Diode) nonmetal substrate and high heat radiation LED element as well as making method thereof |
| CN103117333A (en) * | 2011-11-16 | 2013-05-22 | 常州光电技术研究所 | Transparent electrode manufacturing method improving device yield rate |
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| Title |
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| 美）仝兴存: "《电子封装热管理先进材料》", 30 April 2016 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113937614A (en) * | 2021-09-30 | 2022-01-14 | 温州泛波激光有限公司 | Low-thermal-resistance BAR packaging process |
| CN113937614B (en) * | 2021-09-30 | 2023-08-18 | 温州泛波激光有限公司 | Low thermal resistance BAR strip packaging technology |
| CN116598884A (en) * | 2023-07-14 | 2023-08-15 | 中国科学院半导体研究所 | Semiconductor laser and method for manufacturing the same |
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