CN112017933B - Liner, reaction chamber and semiconductor processing equipment - Google Patents
Liner, reaction chamber and semiconductor processing equipment Download PDFInfo
- Publication number
- CN112017933B CN112017933B CN201910469364.7A CN201910469364A CN112017933B CN 112017933 B CN112017933 B CN 112017933B CN 201910469364 A CN201910469364 A CN 201910469364A CN 112017933 B CN112017933 B CN 112017933B
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- Prior art keywords
- liner
- lining
- grounding
- reaction chamber
- grounding structure
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000012545 processing Methods 0.000 title claims abstract description 12
- 230000006698 induction Effects 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 12
- 238000004891 communication Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32504—Means for preventing sputtering of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/58—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation characterised by the form or material of the contacting members
- H01R4/64—Connections between or with conductive parts having primarily a non-electric function, e.g. frame, casing, rail
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a lining, a reaction chamber and semiconductor processing equipment, wherein the lining comprises a lining body, the lining body comprises an upper body and a lower body which are axially arranged along the lining body, a gap is arranged between the lower end face of the upper body and the upper end face of the lower body, an upper grounding structure is arranged at the upper end of the upper body and is electrically communicated with the chamber wall of the reaction chamber, a lower grounding structure is arranged at the lower end of the lower body, and the lower grounding structure is electrically communicated with a base. The lining provided by the invention can reduce or even eliminate the potential difference of the lining in the axial direction, and the grounding structure can be suitable for a high-temperature environment and is stable and reliable.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a lining, a reaction chamber and semiconductor processing equipment.
Background
In semiconductor manufacturing equipment, the distribution restriction and shielding of the liner to the plasma are critical to process parameters, and the grounding performance of the liner directly affects the stability of the rf loop, which plays a decisive role in the stability of the plasma.
In the existing semiconductor device, there are usually a plurality of rf circuits when performing a process, wherein the rf circuit of the lower electrode mainly has one circuit: the radio frequency current generated by the radio frequency power supply enters the lower electrode through the matcher, then enters the lining through the plasma, then flows back to the matcher through the grounded lining, and then returns to the radio frequency power supply.
In the prior art, the liner is grounded by being in electrical communication with the chamber walls of the reaction chamber. The specific grounding structure is as follows: the upper end of inside lining is provided with annular boss, and the lower surface of this annular boss is laminated mutually with the top surface of cavity lateral wall to realize the electric conduction of inside lining and reaction chamber.
However, since the upper end of the liner is well grounded and the lower end is not grounded, a potential difference exists in the axial direction of the liner, so that the radio frequency loop is unstable, the effect of shielding plasma by the liner is weakened, and sputtering is easy to generate.
Disclosure of Invention
The invention aims at solving at least one of the technical problems in the prior art, and provides a lining, a reaction chamber and semiconductor processing equipment, which can reduce or even eliminate the potential difference of the lining in the axial direction, and the grounding structure can be suitable for a high-temperature environment and is stable and reliable.
In order to achieve the above object, the present invention provides a liner, which comprises a liner body, wherein the liner body comprises an upper body and a lower body which are axially arranged along the liner body, a gap is arranged between the lower end surface of the upper body and the upper end surface of the lower body, an upper grounding structure is arranged at the upper end of the upper body, the upper grounding structure is electrically communicated with a chamber wall of a reaction chamber, a lower grounding structure is arranged at the lower end of the lower body, and the lower grounding structure is electrically communicated with a base.
Optionally, the lower grounding structure includes a grounding member connected to the lower body, and the grounding member includes a bonding surface bonded to an outer surface of the base.
Optionally, a conductive layer is disposed on an area where the outer surface of the base is attached to the attaching surface of the grounding member, and/or on the attaching surface of the grounding member.
Optionally, the grounding piece is a closed ring body circumferentially arranged along the circumference of the lower body; alternatively, the grounding member includes a plurality of sub-grounding members circumferentially surrounding and spaced apart from the lower body.
Optionally, the closed ring body is an annular flanging structure formed by folding the lower part of the lower body outwards after the inner side end of the lower body extends downwards.
Optionally, the plurality of sub-grounding members are a plurality of independent flanging structures formed by folding outwards after a plurality of non-adjacent areas on the inner side end of the lower part of the lower body extend downwards.
Optionally, the slit is a labyrinth channel capable of blocking the passage of plasma.
Optionally, the cross-sectional shape of the labyrinth passage includes one or more combinations of diagonal, dog-leg, wavy, and arcuate; wherein, the height of the inclined labyrinth channel in the axial direction of the lining body is gradually increased from inside to outside.
Optionally, the cross section of the labyrinth passage is oblique, and the included angle between the extending direction of the oblique labyrinth passage and the axial direction of the lining body ranges from 20 degrees to 35 degrees.
Optionally, the width of the cross section of the labyrinth channel ranges from 0.5mm to 1mm.
Optionally, the upper grounding structure includes a boss protruding relative to the outer peripheral wall of the upper body, and the boss is stacked on an upper end surface of a chamber wall of the reaction chamber and an induction coil disposed between a lower end surface of the boss and the upper end surface of the chamber wall of the reaction chamber.
As another technical scheme, the invention also provides a reaction chamber, wherein a base and a lining are arranged in the reaction chamber, and the lining adopts the lining provided by the invention.
As another technical scheme, the invention also provides a semiconductor processing device, which comprises the reaction chamber provided by the invention.
The invention has the beneficial effects that:
the liner provided by the invention comprises a liner body, wherein the liner body comprises an upper body and a lower body which are axially arranged along the liner body, a gap is arranged between the lower end face of the upper body and the upper end face of the lower body, an upper grounding structure is arranged at the upper end of the upper body and is electrically communicated with a chamber wall of a reaction chamber, and a lower grounding structure is arranged at the lower end of the lower body and is electrically communicated with a base. Because the lining body is divided into the upper body and the lower body, the extension length of the upper body and the lower body in the axial direction is shortened relative to the integral lining body, so that the potential difference of the lining body in the axial direction can be reduced, the stability of a radio frequency loop can be improved, and the effect of the lining on shielding plasma is ensured. By means of the lower grounding structure, the upper end of the upper body of the lining can be grounded, and the lower end of the lower body of the lining can be grounded, so that potential difference of the lining in the axial direction of the lining can be reduced or even eliminated, the stability of a radio frequency loop can be improved, and the effect of shielding plasma by the lining is ensured. Meanwhile, as the lower end of the lining is close to the base, the two are easy to realize electric conduction, so that the limit on the lower grounding structure is less, namely, the grounding structure which is applicable to high-temperature environment and is stable and reliable can be allowed to be applied to the lining.
According to the reaction chamber provided by the invention, by adopting the lining provided by the invention, the potential difference of the lining in the axial direction can be reduced or even eliminated, and the grounding structure can be suitable for a high-temperature environment and is stable and reliable.
According to the semiconductor processing equipment provided by the invention, by adopting the reaction chamber provided by the invention, the potential difference of the lining in the axial direction of the lining can be reduced or even eliminated, and the grounding structure can be suitable for a high-temperature environment and is stable and reliable.
Drawings
FIG. 1 is a partial cross-sectional view of a liner provided in accordance with an embodiment of the present invention;
FIG. 2 is another partial cross-sectional view of a liner provided in accordance with an embodiment of the present invention;
FIG. 3 is yet another partial cross-sectional view of a liner provided in accordance with an embodiment of the present invention;
fig. 4 is a further partial cross-sectional view of a liner provided in accordance with an embodiment of the present invention.
Detailed Description
In order to better understand the technical scheme of the present invention, the lining, the reaction chamber and the semiconductor processing equipment provided by the present invention are described in detail below with reference to the accompanying drawings.
Referring to fig. 1, a liner according to a first embodiment of the present invention includes a liner body 3, an upper grounding structure 31 and a lower grounding structure 32, wherein the liner body 3 includes an upper body 301 and a lower body 302 disposed along an axial direction thereof, and a gap 33 is formed between a lower end surface of the upper body 301 and an upper end surface of the lower body 302. An upper ground structure 31 is provided at an upper end of the upper body 301 for electrical communication with the chamber wall 1 of the reaction chamber, and a lower ground structure 32 is provided at a lower end of the lower body 302, the lower ground structure 32 being for electrical communication with the susceptor 2.
Because the lining body 3 is divided into the upper body 301 and the lower body 302, the extension lengths of the upper body 301 and the lower body 302 in the axial direction are shortened relative to the integral lining body 3, so that the potential difference of the lining body 3 in the axial direction can be further reduced, the stability of a radio frequency loop can be further improved, and the effect of shielding plasma by the lining is ensured.
By means of the lower grounding structure 32, the upper end of the upper body 301 can be grounded while the lower end of the lower body 302 is grounded, so that the potential difference of the liner in the axial direction of the liner can be reduced or even eliminated, the stability of the radio frequency loop can be improved, and the effect of shielding the liner from plasma can be ensured. Meanwhile, since the lower end of the lower body 302 is closer to the base 2, the two are easily electrically conducted, so that the lower grounding structure 32 is less limited, i.e., the grounding structure can be allowed to be applied to a high-temperature environment, and is stable and reliable.
In other words, if the lower end of the lower body 302 is grounded through the bottom chamber wall of the reaction chamber, a longer grounding structure is needed to achieve the electrical conduction of the two because of the longer distance between the two, which not only occupies a larger space, but also the grounding structure under the base may generate an induced magnetic field to affect the rf stability of the lower electrode. In addition, in order to ensure good grounding, a grounding structure with elasticity or flexibility needs to be selected to meet the requirement of long-distance electric contact, however, the grounding structure is difficult to be suitable for a high-temperature environment, and the elastic piece is easy to lose elasticity due to aging, so that the service life is short, the maintenance frequency is high, and further the maintenance cost is increased. Compared with the liner provided by the embodiment, the lower end of the lower body 302 is grounded through the base 2, and the common grounding structure with surface contact can ensure good grounding due to the close distance between the lower body and the base, so that the liner can be selectively applied to a high-temperature environment, and the stable and reliable grounding structure can be applied to the liner.
In the present embodiment, the lower grounding structure 32 includes a grounding member connected with the lower body 302, and the grounding member includes an abutment surface 321 that abuts against the upper surface (i.e., upwardly facing surface) 21 of the base 2. In this way, the grounding piece and the base 2 are electrically conducted in a surface contact mode, and the conduction mode can be suitable for a high-temperature environment and is stable and reliable. Meanwhile, since the lower end of the liner body 3 is located above the base 2, the grounding member is most simply in surface contact with the upper surface 21 of the base 2. Of course, in practical application, the contact surface 321 of the grounding member may also contact with an outer surface of the base 2, such as a side surface or a lower surface.
Preferably, a conductive layer is disposed on the region where the outer surface of the base 2 is attached to the attaching surface 321 of the grounding member and/or on the attaching surface 321 of the grounding member, so as to enhance the electrical conduction effect. Alternatively, the conductive layer may be obtained by subjecting the bonding region of the outer surface of the base 2 and/or the bonding surface of the ground member to a surface nickel plating treatment. In addition, it is preferable that a protective layer is provided on other surfaces of the base 2 and/or the ground member that are not bonded to each other for improving corrosion resistance. Alternatively, the protective layer may be obtained by hard anodizing the susceptor 2 and/or the ground.
In this embodiment, the grounding member is a closed ring body circumferentially disposed along the circumferential direction of the liner body 3, so that the contact area with the base 2 can be increased, and the electrical conduction effect is enhanced. Of course, in practical application, the grounding member may also be in a split structure, that is, include a plurality of sub-grounding members circumferentially surrounding and spaced from the liner body.
Specifically, as shown in fig. 1, the closed ring is an annular flanging structure formed by extending the inner side end (close to the base 2) of the lower portion (horizontal portion) of the lower body 302 downward and then folding the lower side (away from the base 2) outward, and the cross-sectional shape of the annular flanging structure is similar to an "L" shape. By means of the annular flanging structure, the contact area between the closed ring body and the base 2 can be increased, and thus the electric conduction effect can be further enhanced. If the grounding member is composed of a plurality of sub-grounding members that are circumferentially encircling the liner body and are disposed at intervals, each sub-grounding member may have a flanging structure similar to the above-mentioned closed ring, that is, a plurality of independent flanging structures formed by folding the inner side end of the lower portion of the lower body 302 outward after a plurality of non-adjacent regions extend downward. Of course, in practical applications, any other structure may be used for the closed loop or the sub-grounding member, as long as the electrical conduction between the lower body 302 and the base 2 can be achieved.
In the present embodiment, the upper grounding structure 31 includes a boss protruding with respect to the outer peripheral wall of the upper body 301, which is superposed on the upper end face of the chamber wall 1 of the reaction chamber, and an induction coil 4 is provided between the lower end face of the boss and the upper end face of the chamber wall 1 of the reaction chamber for improving the grounding stability, enhancing the electrical conduction effect. In practical application, when the reaction chamber is in a vacuum state, the sealing ring 5 arranged between the lower end face of the boss and the upper end face of the chamber wall 1 of the reaction chamber is compressed, and the induction coil 4 is also compressed at the moment, so that good contact between the lower end face of the boss and the upper end face of the chamber wall 1 of the reaction chamber is ensured.
In this embodiment, the gap 33 between the lower end surface of the upper body 301 and the upper end surface of the lower body 302 adopts a labyrinth passage capable of blocking the passage of plasma, so as to ensure the distribution restriction and shielding effect of the liner on the plasma. By labyrinth channel is meant that the passage of plasma is blocked by adopting a specific channel shape. Alternatively, the cross-sectional shape of the labyrinth passage includes one or a combination of a diagonal shape, a fold shape, a wavy shape, and a curved shape. For example, as shown in fig. 1, the cross-sectional shape of the labyrinth passage is a diagonal shape, and the height of the labyrinth passage in the axial direction of the liner body is gradually increased from inside to outside. Preferably, the included angle a between the extending direction of the oblique line channel and the axial direction of the lining body 3 is within the range of 20-35 degrees. By controlling the included angle a within this range, the passage of plasma can be blocked.
As another example, as shown in fig. 2, the cross-sectional shape of the slit 33' is a dogleg shape, and in particular, the dogleg-shaped labyrinth passage is similar to an inverted "V" shaped passage. As another example, as shown in fig. 3, the slit 33″ has a cross-sectional shape of a broken line channel, and in particular, the broken line-shaped labyrinth channel is similar to an "M" -shaped channel. As also shown in fig. 4, the slit 33' "has a longitudinal cross-sectional shape of an arc, and in particular, the arcuate labyrinth passage is similarly an" arcuate "passage.
Optionally, the width D of the longitudinal cross section of any one of the labyrinth channels is in the range of 0.5mm to 1mm. By controlling the width D within this range, the passage of plasma can be effectively blocked.
In summary, the liner provided by the embodiment of the invention includes a liner body, the liner body includes an upper body and a lower body disposed along an axial direction thereof, a gap is formed between a lower end surface of the upper body and an upper end surface of the lower body, an upper grounding structure is disposed at an upper end of the upper body, the upper grounding structure is electrically connected to a chamber wall of the reaction chamber, a lower grounding structure is disposed at a lower end of the lower body, and the lower grounding structure is electrically connected to the base. Because the lining body is divided into the upper body and the lower body, the extension length of the upper body and the lower body in the axial direction is shortened relative to the integral lining body, so that the potential difference of the lining body in the axial direction can be reduced, the stability of a radio frequency loop can be improved, and the effect of the lining on shielding plasma is ensured. By means of the lower grounding structure, the upper end of the lower body can be grounded, and meanwhile, the lower end of the lining body is grounded, so that potential difference of the lining in the axial direction of the lining can be reduced or even eliminated, the stability of a radio frequency loop can be improved, and the effect of shielding plasma by the lining is ensured. Meanwhile, as the lower end of the lining is close to the base, the two are easy to realize electric conduction, so that the limit on the lower grounding structure is less, namely, the grounding structure which is applicable to high-temperature environment and is stable and reliable can be allowed to be applied to the lining.
As another technical solution, an embodiment of the present invention further provides a reaction chamber, in which a base and a liner are disposed, and the liner is provided by using the liner provided in each of the foregoing embodiments of the present invention.
According to the reaction chamber provided by the embodiment of the invention, by adopting the lining provided by the embodiment of the invention, the potential difference of the lining in the axial direction can be reduced or even eliminated, and the grounding structure can be suitable for a high-temperature environment and is stable and reliable.
As another technical solution, an embodiment of the present invention further provides a semiconductor processing apparatus, where the semiconductor processing apparatus adopts the reaction chamber provided in each of the foregoing embodiments of the present invention.
According to the semiconductor processing equipment provided by the embodiment of the invention, through the adoption of the reaction chamber provided by the embodiment of the invention, the potential difference of the lining in the axial direction of the lining can be reduced or even eliminated, and the grounding structure can be suitable for a high-temperature environment and is stable and reliable.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.
Claims (9)
1. The lining comprises a lining body, and is characterized in that the lining body comprises an upper body and a lower body which are axially arranged along the lining body, a gap is formed between the lower end face of the upper body and the upper end face of the lower body, an upper grounding structure is arranged at the upper end of the upper body and is electrically communicated with a chamber wall of a reaction chamber, a lower grounding structure is arranged at the lower end of the lower body, and the lower grounding structure is electrically communicated with a base;
the lower grounding structure comprises a grounding piece connected with the lower body, and the grounding piece comprises a fitting surface fitting with the outer surface of the base;
the grounding piece is a closed ring body which is circumferentially arranged along the circumference of the lower body, and the closed ring body is an annular flanging structure formed by extending the inner side end of the lower part of the lower body downwards and then outwards turning over; or, the grounding piece comprises a plurality of sub-grounding pieces which are circumferentially surrounded and arranged at intervals along the lower body, and the plurality of sub-grounding pieces are a plurality of independent flanging structures formed by downward extending and outward folding of a plurality of non-adjacent areas on the inner side end of the lower part of the lower body.
2. The liner of claim 1, wherein a conductive layer is provided on an area of the outer surface of the base that is in contact with the contact surface of the ground contact member and/or on the contact surface of the ground contact member.
3. A liner according to claim 1 or claim 2, wherein the slit is a labyrinth passage capable of blocking passage of plasma.
4. The liner of claim 3, wherein the cross-sectional shape of the labyrinth passage comprises a combination of one or more of diagonal, dog-leg, wavy, and curved; wherein, the height of the inclined labyrinth channel in the axial direction of the lining body is gradually increased from inside to outside.
5. The liner according to claim 4, wherein the cross-sectional shape of the labyrinth passage is a diagonal shape, and the included angle between the extending direction of the diagonal labyrinth passage and the axial direction of the liner body is in the range of 20 ° -35 °.
6. A liner according to claim 3, wherein the cross-section of the labyrinth passage has a width in the range of 0.5mm to 1mm.
7. The liner according to claim 1 or 2, wherein the upper grounding structure comprises a boss protruding with respect to an outer peripheral wall of the upper body, the boss being superposed on an upper end face of a chamber wall of the reaction chamber and an induction coil provided between a lower end face of the boss and the upper end face of the chamber wall of the reaction chamber.
8. A reaction chamber in which a susceptor and a liner are provided, characterized in that the liner is according to any one of claims 1-7.
9. A semiconductor processing apparatus comprising the reaction chamber of claim 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910469364.7A CN112017933B (en) | 2019-05-31 | 2019-05-31 | Liner, reaction chamber and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910469364.7A CN112017933B (en) | 2019-05-31 | 2019-05-31 | Liner, reaction chamber and semiconductor processing equipment |
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| Publication Number | Publication Date |
|---|---|
| CN112017933A CN112017933A (en) | 2020-12-01 |
| CN112017933B true CN112017933B (en) | 2024-03-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910469364.7A Active CN112017933B (en) | 2019-05-31 | 2019-05-31 | Liner, reaction chamber and semiconductor processing equipment |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114361000B (en) * | 2022-01-04 | 2024-04-16 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber and semiconductor process equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101926232A (en) * | 2008-01-28 | 2010-12-22 | 应用材料公司 | Etching chamber having flow equalizer and lower liner |
| CN107578975A (en) * | 2017-08-17 | 2018-01-12 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
| CN107731650A (en) * | 2016-08-10 | 2018-02-23 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
| CN108735620A (en) * | 2017-04-19 | 2018-11-02 | 北京北方华创微电子装备有限公司 | A kind of reaction chamber |
| CN109735822A (en) * | 2018-11-14 | 2019-05-10 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor equipment |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090242383A1 (en) * | 2008-03-31 | 2009-10-01 | Tokyo Electron Limited | Apparatus and method for rf grounding of ipvd table |
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2019
- 2019-05-31 CN CN201910469364.7A patent/CN112017933B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101926232A (en) * | 2008-01-28 | 2010-12-22 | 应用材料公司 | Etching chamber having flow equalizer and lower liner |
| CN107731650A (en) * | 2016-08-10 | 2018-02-23 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
| CN108735620A (en) * | 2017-04-19 | 2018-11-02 | 北京北方华创微电子装备有限公司 | A kind of reaction chamber |
| CN107578975A (en) * | 2017-08-17 | 2018-01-12 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
| CN109735822A (en) * | 2018-11-14 | 2019-05-10 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor equipment |
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| CN112017933A (en) | 2020-12-01 |
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