WO2023134456A1 - Process chamber assembly, semiconductor process device and method therefor - Google Patents

Process chamber assembly, semiconductor process device and method therefor Download PDF

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Publication number
WO2023134456A1
WO2023134456A1 PCT/CN2022/143168 CN2022143168W WO2023134456A1 WO 2023134456 A1 WO2023134456 A1 WO 2023134456A1 CN 2022143168 W CN2022143168 W CN 2022143168W WO 2023134456 A1 WO2023134456 A1 WO 2023134456A1
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WIPO (PCT)
Prior art keywords
gas
chamber
uniform
exhaust port
exhaust
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PCT/CN2022/143168
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French (fr)
Chinese (zh)
Inventor
赵万辉
邓晓军
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北京北方华创微电子装备有限公司
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Publication of WO2023134456A1 publication Critical patent/WO2023134456A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Definitions

  • the invention relates to the field of semiconductor manufacturing, in particular to a process chamber assembly of semiconductor process equipment, semiconductor process equipment and a method thereof.
  • the existing decompression epitaxial process chamber consists of an upper chamber and a lower chamber to form a closed space, and the closed space is divided into upper and lower chambers with the bearing surface of the base as the dividing line, which is arranged in the upper chamber and is connected with the
  • the air inlet and the exhaust port connected to the upper chamber are set opposite to each other in the horizontal direction, and the process gas enters the upper chamber through the air inlet, and is discharged to the exhaust pipeline through the exhaust port.
  • the upper and lower chambers are made of transparent quartz, and the infrared heating lamps outside the upper and lower chambers radiate energy toward the base through the upper and lower chambers, so that the base can be heated rapidly to provide the energy required for the epitaxial reaction.
  • the diffusion free path of the process gas entering the process chamber is larger, and the process gas is easy to deposit on the lower chamber to form deposits.
  • the existence of the deposits will absorb the heat radiation of the heating lamp and make the The temperature of the lower chamber rises, which makes deposition more likely to occur on the lower chamber, forming a vicious circle.
  • the deposit When the deposit reaches a certain thickness, it will affect the uniformity of the room temperature field.
  • the existence of deposits will also affect the accuracy of pyrometer temperature measurement, causing drift of process results.
  • the lower chamber must be replaced or cleaned through chamber maintenance, which will shorten the maintenance cycle of the process chamber, resulting in shortened equipment online time and increased production costs.
  • the present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a process chamber component of semiconductor process equipment, semiconductor process equipment and method, which can effectively remove the deposits, which can greatly save the maintenance time of the chamber, prolong the online time of the equipment, and reduce the production cost.
  • a process chamber assembly of semiconductor process equipment including an upper chamber, a lower chamber and a base for carrying wafers arranged between the upper chamber and the lower chamber , an upper chamber is formed between the upper cavity and the bearing surface of the base, a lower chamber is formed between the lower cavity and the bearing surface, and the upper chamber communicates with the lower chamber , a first air inlet and a first exhaust port communicating with the upper chamber are provided between the upper cavity and the lower cavity, and the first exhaust port is used to communicate with the air extraction device; A plurality of second exhaust ports are provided at the bottom of the lower cavity;
  • the process chamber assembly also includes a gas uniform structure and a switching structure, wherein the gas uniform structure is located outside the lower chamber, the gas uniform structure has a gas uniform chamber, and the gas uniform chamber passes through the first
  • the second exhaust port communicates with the lower chamber, and a third exhaust port communicated with the uniform gas chamber is opened on the uniform gas structure, and the third exhaust port is used to communicate with the air extraction device connected;
  • the switching structure is used for selectively communicating one of the first exhaust port and the third exhaust port with the air extraction device.
  • the switching structure includes a first exhaust pipeline and a second exhaust pipeline, wherein the intake end of the first exhaust pipeline communicates with the first exhaust port, and the second exhaust pipeline
  • the outlet end of an exhaust pipeline is used to communicate with the air extraction device, and a first on-off valve is arranged on the first exhaust pipeline; the inlet end of the second exhaust pipeline is connected to the The third exhaust port is connected, the gas outlet end of the second exhaust pipeline is used to communicate with the suction device, and a second on-off valve is arranged on the second exhaust pipeline.
  • the gas uniform structure includes a gas uniform outer wall, the gas uniform outer wall is located outside the lower cavity, and is fixedly connected with the lower cavity; the inner surface of the gas uniform outer wall is connected to the lower cavity The area of the outer surface of the cavity opposite to the gas uniform outer wall encloses the gas uniform chamber, and the third exhaust port is arranged on the gas uniform outer wall.
  • the lower chamber includes a tapered cylindrical portion and a straight cylindrical portion, wherein the inner diameter of the tapered cylindrical portion decreases gradually along the direction away from the upper chamber; the upper end of the straight cylindrical portion is connected to the tapered The lower end of the barrel part is connected; a plurality of the second exhaust ports are all arranged on the tapered barrel part, and are evenly distributed along the circumference of the tapered barrel part;
  • the gas uniform outer wall is ring-shaped, and is arranged around the junction of the tapered cylinder part and the straight cylinder part, the inner surface of the gas uniform outer wall, the tapered cylinder part and the straight cylinder part are respectively outer
  • the area of the surface opposite to the gas uniform outer wall jointly encloses the gas uniform chamber.
  • the outer wall of the uniform gas is in the shape of a cone, and the inner diameter of the outer wall of the uniform gas decreases gradually along the direction away from the upper chamber.
  • the process chamber assembly further includes a rotating shaft and a driving device for driving the rotating shaft to rotate, wherein, one end of the rotating shaft is connected to the base, and the other end is away from the upper chamber.
  • the direction of the chamber runs through the bottom of the straight cylinder, extends to the outside of the straight cylinder and connects with the drive device;
  • a second air inlet is also provided at the bottom of the straight barrel portion for delivering purge gas to the lower chamber along a direction close to the upper chamber.
  • the ratio of the sum of the cross-sectional areas of all the second exhaust ports to the area of the area of the outer surface of the cavity opposite to the uniform gas outer wall is greater than or equal to one-third and less than or equal to half one.
  • a flow control valve is also provided on the second exhaust pipeline, the first exhaust pipeline communicates with the second exhaust pipeline, and the gas outlet end of the second exhaust pipeline connected at a position between downstream of the first on-off valve and upstream of the flow control valve.
  • the present invention also provides a semiconductor process equipment, including the above-mentioned process chamber assembly provided by the present invention.
  • the present invention also provides a process method for semiconductor processing equipment, which is applied to the above-mentioned process chamber assembly provided by the present invention, and the method includes:
  • a process gas is introduced into the upper chamber through the first gas inlet, and the first exhaust port is communicated with the pumping device;
  • the etching gas is fed into the upper chamber through the first gas inlet, and the third gas outlet is communicated with the pumping device.
  • the process chamber assembly of the semiconductor process equipment provided by the present invention selectively connects one of the first exhaust port and the third exhaust port with the pumping device through a switching structure.
  • the The first exhaust port communicates with the exhaust device, so that the process gas can flow into the upper chamber through the first air inlet, and after flowing through the wafer surface on the base, it can be discharged into the exhaust port through the first exhaust port.
  • the third gas outlet can be communicated with the gas extraction device, so that the etching gas can flow into the upper chamber through the first gas inlet , and discharged into the uniform gas chamber through each second exhaust port at the bottom of the lower chamber, and then discharged into the exhaust device through the third exhaust port, the etching gas will be combined with the inner surface of the lower chamber during the process
  • the deposit attached to it reacts chemically, so that the in-situ etching of the deposit can be realized without the maintenance of the chamber opening, which can greatly save the maintenance time of the chamber, prolong the online time of the equipment, and reduce the Cost of production.
  • the semiconductor processing equipment provided by the present invention by adopting the above-mentioned process chamber assembly provided by the present invention, can realize in-situ etching of deposits without performing chamber opening and maintenance, thereby greatly saving the cost of the chamber. Maintenance time is extended, equipment online time is extended, and production costs are reduced.
  • FIG. 1 is a schematic structural diagram of a process chamber assembly provided by an embodiment of the present invention
  • Fig. 2 is the top view of the lower cavity adopted in the embodiment of the present invention.
  • Fig. 3 is a side view of the lower cavity used in the embodiment of the present invention.
  • Fig. 4 is a gas flow path diagram of a process chamber assembly provided by an embodiment of the present invention.
  • the process chamber assembly of the semiconductor process equipment provided by the embodiment of the present invention, which includes an upper chamber 11, a lower chamber 12 and a device for carrying crystals arranged between the upper chamber 11 and the lower chamber 12.
  • Round base 5 an upper chamber 111 is formed between the upper chamber 11 and the bearing surface of the base 5, a lower chamber 112 is formed between the lower chamber 12 and the above-mentioned bearing surface, and the upper chamber 111 and the lower chamber 112 connected. That is to say, the upper chamber 11 and the lower chamber 12 form a closed space, and the closed space is divided into an upper chamber 111 and a lower chamber 112 with the bearing surface of the base 5 as a boundary.
  • a first air inlet 3 and a first exhaust port 4 communicating with the upper chamber 111 are provided between the upper cavity 11 and the lower cavity 12, the first air inlet 3 and the first exhaust port 4 For example, they are relatively arranged along the horizontal direction.
  • the first gas inlet 3 is used to pass process gas into the upper chamber 111, and the type of the process gas can be set according to the deposition process carried out;
  • the first exhaust port 4 is used to communicate with the pumping device 10 , so that the gas in the upper chamber 111 can be discharged.
  • an annular upper lining 22 and a lower lining 21 may be provided between the upper cavity 11 and the lower cavity 12, the upper cavity 11, the lower cavity 12, the upper cavity
  • the inner liner 22 and the lower inner liner 21 together form a closed space
  • the upper chamber 111 is the area above the bearing surface of the base 5 in the airtight space
  • the lower chamber 112 is the area below the bearing surface.
  • a first intake port 3 and a first exhaust port 4 facing each other.
  • the above-mentioned first gas inlet 3 and the first exhaust port 4 are, for example, one, and optionally, in order to increase the gas flow rate and improve the gas diffusion efficiency, thereby improving the flow rate of the process gas in the upper chamber
  • the uniformity of distribution in the chamber 111 , the above-mentioned first air inlet 3 and the first air outlet 4 are arc-shaped, and extend along the circumferential direction of the upper chamber 111 .
  • the number of the above-mentioned first air inlet 3 and the first air outlet 4 may also be multiple, and other structures may be adopted, which is not particularly limited in the embodiment of the present invention.
  • a plurality of second exhaust ports 123 communicating with the lower chamber 112 are provided at the bottom of the lower chamber 12 to discharge the gas in the lower chamber 112 .
  • eight second exhaust ports 123 are shown in FIG. 2 .
  • multiple second exhaust ports 123 are evenly distributed along the circumference of the lower cavity 12 . In this way, the gas in the lower chamber 112 can be uniformly discharged, so that the etching gas entering the lower chamber 112 can evenly flow through the inner surface of the lower chamber 12, thereby ensuring that the inner surface of the lower chamber 12 Each position on the surface has a better etching effect.
  • the plurality of second exhaust ports 123 may be arranged around the circumference of the lower cavity 12 in one or more circles.
  • the cross-sectional shape of each second exhaust port 123 includes oval, circular, triangular or other arbitrary shapes, preferably, the cross-sectional shape of each second exhaust port 123 is oval Or other shapes with an aspect ratio greater than 1, and the long axis of the shape is arranged along the radial direction of the lower cavity 12, which helps to improve the uniformity of gas distribution.
  • the above-mentioned process chamber assembly also includes a gas uniform structure 9 and a switching structure, wherein the gas uniform structure 9 is located outside the lower cavity 12, and the gas uniform structure 9 has a gas uniform chamber 113.
  • the uniform gas chamber 113 communicates with the lower cavity 12 through the second exhaust port 123, and a third exhaust port (not shown) communicated with the gas uniform chamber 113 is provided on the gas uniform structure 9.
  • the third row The air port is used to communicate with the air extraction device 10 .
  • the uniform gas chamber 113 communicates with each second exhaust port 123 , and the above-mentioned third exhaust port communicates with both the gas uniform chamber 113 and the air extraction device 10 .
  • the gas discharged from each of the second exhaust ports 123 will be discharged into the air extraction device 10 through the uniform gas chamber 113 and the third exhaust port successively.
  • the gas uniform structure 9 With the help of the gas uniform structure 9 , the gas can be uniformly flowed, so that the gas distribution uniformity in the lower chamber 112 can be improved.
  • the switching structure is used to selectively connect one of the first exhaust port 4 and the third exhaust port with the air extraction device 10, that is, when the first exhaust port 4 communicates with the air extraction device 10, the above-mentioned first exhaust port 4 communicates with the air extraction device 10.
  • the three exhaust ports are disconnected from the air extraction device 10 and cannot be exhausted; when the above-mentioned third exhaust port is connected to the air extraction device 10, the first exhaust port 4 is disconnected from the air extraction device 10 and cannot be exhausted.
  • the above-mentioned switching structure can be used to communicate the first exhaust port 4 with the pumping device 10.
  • the epitaxial growth gas flows into the upper chamber 111 through the first gas inlet 3, And after flowing through the wafer surface on the susceptor 5, it can be exhausted into the exhaust device 10 through the first exhaust port 4, so as to realize the epitaxial growth process.
  • etching gas such as hydrogen chloride
  • the gas flow is divided into two parts, one of which is After flowing through the surface of the susceptor 5, since the first exhaust port 4 is not in communication with the pumping device 10, it cannot be exhausted, and the etching gas will pass through the annular space between the susceptor 5 and the preheating ring 18 from the right side of the susceptor 5.
  • the gap flows into the lower chamber 112, and another part will flow into the lower chamber 112 directly from the left side of the base 5 through the annular gap between the base 5 and the preheating ring 18, and then, the etching gas entering the lower chamber 112 It will flow toward the second exhaust port 123 along the inner surface of the lower chamber 12, and in the process, the etching gas will chemically react with the deposits attached to the inner surface of the lower chamber 12, so that the etching gas can be processed without the chamber.
  • chamber opening maintenance in-situ etching of deposits can be realized, which can greatly save chamber maintenance time, prolong equipment online time, and reduce production costs.
  • the switching structure above includes a first exhaust pipeline 7 and a second exhaust pipeline 8, wherein the intake end of the first exhaust pipeline 7 is connected to the above-mentioned
  • the first exhaust port 4 communicates, the outlet end of the first exhaust pipeline 7 is used to communicate with the air extraction device 10, and a first on-off valve 71 is provided on the first exhaust pipeline 7 for connecting Or disconnect the first exhaust pipeline 7.
  • the intake end of the second exhaust pipeline 8 communicates with the above-mentioned third exhaust port, and the outlet end of the second exhaust pipeline 8 is used to communicate with the air extraction device 10, and is arranged on the second exhaust pipeline 8
  • the first on-off valve 71 can be opened, and the second on-off valve 81 can be closed to connect the first exhaust port 4 with the pumping device 10, and connect the above-mentioned third exhaust port to the pumping device 10.
  • the device 10 is disconnected; during the in-situ etching process, the second on-off valve 81 can be opened, and the first on-off valve 71 can be closed to connect the above-mentioned third exhaust port with the air extraction device 10, and the first The exhaust port 4 is disconnected from the suction device 10 .
  • a flow control valve 72 is also provided on the first exhaust pipeline 7 to adjust the gas flow in the first exhaust pipeline 7, so that the pressure in the cavity 1 can be controlled .
  • the air extraction device 10 includes an air extraction pump, and the first exhaust pipeline 7 and the second exhaust pipeline 8 share the air extraction pump.
  • the first exhaust pipeline 7 communicates with the second exhaust pipeline 8
  • the outlet end of the second exhaust pipeline 8 is connected between the downstream of the first on-off valve 71 and the upstream of the flow control valve 72 at the location.
  • the flow control valve 72 can control the pressure of the cavity 1 and the gas flow rate in the cavity 1 and other parameters. for precise control.
  • the air extraction device 10 can also include two air extraction pumps, the first exhaust pipeline 7 and the second exhaust pipeline 8 communicate with the two air extraction pumps respectively, and the first exhaust pipeline Both the pipeline 7 and the second exhaust pipeline 8 are provided with flow control valves.
  • the gas uniform structure 9 includes a gas uniform outer wall, which is located outside the lower cavity 12 and is fixedly connected to the lower cavity 12 . Moreover, the inner surface of the outer wall of the gas uniformity and the area of the outer surface of the lower chamber 12 opposite to the outer wall of the gas uniformity form a uniform gas chamber 113 , and the above-mentioned third exhaust port is arranged on the outer wall of the gas uniformity.
  • the outer wall of the uniform gas can be fixedly connected with the lower cavity 12 by welding, for example.
  • the sum of the cross-sectional areas of all the second exhaust ports 123 is equal to the area of the outer surface of the lower cavity 12 opposite to the above-mentioned uniform gas outer wall (for example, in Figure 2
  • the ratio of the area of the area C in ) is greater than or equal to one-third and less than or equal to one-half.
  • the process chamber assembly provided by the embodiment of the present invention can be, for example, an epitaxial growth process chamber assembly.
  • the upper chamber 11 and the lower chamber 12 are made of transparent materials, such as quartz.
  • An infrared heating lamp 6 is also arranged above the upper cavity 11 and below the lower cavity 12, for radiating heat toward the base 5 through the upper cavity 11 and the lower cavity 12, so that the base 5 can be rapidly heated to provide The energy required for the epitaxial reaction.
  • the material of the base 5 is, for example, a graphite base, and the outer surface of the graphite base is covered with a silicon carbide layer.
  • an upper pyrometer 16 and a lower pyrometer 17 are arranged above the upper chamber 11 and below the lower chamber 12 respectively, to measure the temperature and temperature of the wafer surface through the upper chamber 11 and the lower chamber 12 respectively.
  • the temperature of the lower surface of the base 5 is detected to accurately control the heating temperature of the infrared heating lamp 6 .
  • transparent quartz in the cavity 1 favorable conditions can be provided for the infrared heating lamp 6 to heat the pedestal 5, the upper pyrometer 16 to measure the wafer surface temperature, and the lower pyrometer 17 to measure the pedestal temperature.
  • the upper end of the lower cavity 12 is provided with an annular support portion 13 for supporting the above-mentioned upper lining 22 and lower inner lining 21.
  • the annular support portion 13 is made of foamed quartz As a result, the foamed quartz can provide higher mechanical strength and have good thermal insulation properties.
  • a preheating ring 18 is provided around the base 5, which can be made of the same material as the base 5, and is used to prevent the heat from entering the upper chamber 111 through the first air inlet 3.
  • the process gas plays a preheating role, which can improve the reaction efficiency of the process gas.
  • there is an annular gap between the preheating ring 18 and the base 5 through which the gas in the upper chamber 111 can flow into the lower chamber 112 .
  • the lower chamber 12 includes a tapered cylindrical portion 121 and a straight cylindrical portion 122, wherein the inner diameter of the tapered cylindrical portion 121 is along a direction away from the upper chamber 111 (for example, by from top to bottom), which is funnel-shaped, for example, so that the lower cavity 12 as a whole can have better pressure resistance.
  • the upper end of the straight barrel portion 122 is connected to the lower end of the tapered barrel portion 121, such as being integrated; a plurality of second exhaust ports 123 are all arranged on the tapered barrel portion 121, and are evenly distributed along the circumferential direction of the tapered barrel portion 121 , so that when the deposit on the lower cavity 12 is subjected to an in-situ etching process, it helps to enable the etching gas to flow through various positions on the inner surface of the lower cavity 12, thereby ensuring that the inner surface of the lower cavity 12 Each position has a better etching effect.
  • a plurality of second exhaust ports 123 are all located near the lower end of the tapered barrel portion 121 , so that the etching gas can flow through various positions on the inner surface of the lower cavity 12 .
  • the gas uniform outer wall is ring-shaped, and is arranged around the junction of the tapered cylinder part 121 and the straight cylinder part 122 , and the gas uniform outer wall
  • the above-mentioned gas uniform outer wall is in the shape of a conical cylinder, and the inner diameter of the gas uniform outer wall decreases along the direction away from the upper chamber 111 (for example, from top to bottom), so that the occupied space of the gas uniform structure 9 can be reduced, simplifying
  • the gas uniform structure 9 can prevent the gas uniform structure 9 from interfering with the radiation of the infrared heating lamp 6 .
  • the structure of the above-mentioned uniform gas outer wall is not limited thereto. In practical applications, the above-mentioned gas uniform outer wall can also be straight cylindrical (closed at the bottom), arc cylindrical, irregular cylindrical or other arbitrary shapes.
  • the embodiment has no particular limitation on this.
  • the process chamber assembly further includes a rotating shaft 14 and a driving device 15 for driving the rotating shaft 14 to rotate, wherein one end of the rotating shaft 14 is connected to the base 5 , and the other end runs through the bottom of the straight barrel 122 in a direction away from the upper chamber 111 (for example, vertically downward), and extends to the outside of the straight barrel 122 to connect with the driving device 15 .
  • the rotating shaft 14 can drive the base 5 to rotate, so that the temperature field and air flow field of the upper chamber 111 can be made more uniform.
  • a second air inlet (not shown in the figure) is also provided at the bottom of the straight cylinder portion 122, for Bottom-up) delivers purge gas to the lower chamber 112 .
  • a deposition process such as an epitaxial growth process
  • the part of the rotating shaft 14 located in the straight cylinder part 122 generally metal Material
  • the process gas so that the service life of the rotating shaft 14 can be improved.
  • the purge gas enters the lower chamber 112 , enters the upper chamber 111 through the annular gap between the preheating ring 18 and the susceptor 5 , and then is discharged from the first exhaust port 4 .
  • the purge gas still needs to pass into the straight barrel 122 to protect the part of the rotating shaft 14 inside the straight barrel 122, but due to the The ports 123 are all located near the lower end of the tapered barrel portion 121, so that the purge gas flowing out of the straight barrel portion 122 can be directly discharged through each second exhaust port 123 without any impact on the flow of the etching gas. interference, the flow path of the purge gas is shown by arrow B in Figure 4. It should be noted that the above-mentioned straight cylindrical portion 122 surrounds the rotating shaft 14 and helps the purge gas to protect the rotating shaft 14 .
  • the process chamber assembly of the semiconductor process equipment provided by the embodiment of the present invention selectively connects one of the first exhaust port and the third exhaust port with the exhaust device through a switching structure, and performs During the deposition process, the deposition process gas can flow into the upper chamber through the first air inlet by connecting the first exhaust port with the pumping device, and after flowing through the wafer surface on the base, it can pass through The first exhaust port is discharged into the air extraction device; when it is necessary to etch and remove the deposits on the inner surface of the lower cavity, the third exhaust port can be communicated with the air extraction device so that the etching gas can pass through the first exhaust port.
  • the gas inlet flows into the upper chamber, and is discharged into the uniform gas chamber through each second exhaust port at the bottom of the lower chamber, and then discharged into the suction device through the third exhaust port, and the etching gas flows through the lower chamber
  • the inner surface of the body will chemically react with the deposits attached to it, so that the in-situ etching of the deposits can be realized without the maintenance of the chamber opening, which can greatly save the maintenance of the chamber Time, prolong equipment online time, reduce production cost.
  • an embodiment of the present invention also provides a semiconductor process equipment, which includes the above-mentioned process chamber assembly provided by the embodiment of the present invention.
  • the process chamber assembly is, for example, the process chamber assembly shown in FIG. 1 , because The structure and function of the process chamber components have been described in detail above, and will not be repeated here.
  • the semiconductor processing equipment provided by the embodiment of the present invention can achieve in-situ etching of deposits without performing chamber opening maintenance by using the above-mentioned process chamber assembly provided by the embodiment of the present invention, thereby greatly improving the Save chamber maintenance time, extend equipment online time, and reduce production costs.
  • an embodiment of the present invention also provides a semiconductor process equipment processing method, which is applied to the above-mentioned process chamber assembly provided by the embodiment of the present invention.
  • the Semiconductor process methods include:
  • a process gas is introduced into the upper chamber 111 through the first gas inlet 3, and the first exhaust port 4 is communicated with the pumping device 10; at this time, the process gas passes through the first gas inlet 3
  • An air inlet 3 flows into the upper chamber 111 , and after flowing through the surface of the wafer on the base 5 , it can be exhausted into the exhaust device 10 through the first exhaust port 4 , so as to realize the epitaxial growth process.
  • an etching gas (such as hydrogen chloride) is introduced into the upper chamber 111 through the first gas inlet 3 , and the third gas exhaust port is communicated with the exhaust device 10 . At this time, the etching gas flows into the upper chamber 111 through the first gas inlet 3, and its flow path is shown by arrow A in FIG.
  • One exhaust port 4 is not in communication with the exhaust device 10, so it cannot be exhausted.
  • the etching gas will flow into the lower chamber 112 from the right side of the base 5 through the annular gap between the base 5 and the preheating ring 18, and the other part Will directly flow into the lower chamber 112 from the left side of the base 5 through the annular gap between the base 5 and the preheating ring 18, and then, the etching gas entering the lower chamber 112 will flow along the inner surface of the lower chamber 12 towards The second exhaust port 123 flows, and during this process, the etching gas will chemically react with the deposits attached to the inner surface of the lower chamber 12, so that the deposition can be realized without performing chamber opening maintenance.
  • the in-situ etching of objects can greatly save the maintenance time of the chamber, prolong the online time of the equipment, and reduce the production cost.
  • the process method of the semiconductor process equipment provided by the embodiment of the present invention by using the above-mentioned process chamber assembly provided by the present invention, can realize in-situ etching of deposits without performing chamber opening maintenance, so that It greatly saves the maintenance time of the chamber, prolongs the online time of the equipment, and reduces the production cost.

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Abstract

The present invention provides a process chamber assembly of a semiconductor process device, the semiconductor process device and a method therefor. In the process chamber assembly, a first air inlet and a first air outlet communicating with an upper cavity are formed between the upper cavity and a lower cavity, and the first air outlet is used for communicating with an air extraction apparatus; a plurality of second air outlets are formed in the bottom of the lower cavity; the process chamber assembly further comprises an air uniformizing structure and a switching structure, wherein the air uniformizing structure is located outside the lower cavity, the air uniformizing structure is provided with an air uniformizing chamber, the air uniformizing chamber communicates with the lower cavity by means of the second air outlets, a third air outlet communicating with the air uniformizing chamber is formed in the air uniformizing structure, and the third air outlet is used for communicating with the air extraction apparatus; the switching structure is used for selectively communicating one of the first air outlet and the third air outlet with the air extraction apparatus. According to the technical solution of the present invention, sediments can be effectively removed under the condition that cavity maintenance is not carried out.

Description

工艺腔室组件、半导体工艺设备及其方法Process chamber assembly, semiconductor process equipment and method thereof 技术领域technical field
本发明涉及半导体制造领域，具体地，涉及一种半导体工艺设备的工艺腔室组件及半导体工艺设备及其方法。The invention relates to the field of semiconductor manufacturing, in particular to a process chamber assembly of semiconductor process equipment, semiconductor process equipment and a method thereof.
背景技术Background technique
随着半导体技术的发展，集成电路硅外延片向更大的尺寸发展，集成电路特征尺寸向更小的尺寸发展，并伴随有许多复杂的新工艺需求的产生。为了满足新工艺需求减压外延技术应运而生，减压外延在控制自掺杂和图形畸变与漂移方面有着很大的优势。With the development of semiconductor technology, silicon epitaxial wafers of integrated circuits are developing to larger dimensions, and the feature size of integrated circuits is developing to smaller dimensions, accompanied by the emergence of many complex new process requirements. In order to meet the needs of new processes, decompression epitaxy technology has emerged, and decompression epitaxy has great advantages in controlling self-doping and pattern distortion and drift.
现有的减压外延工艺腔室由上、下腔体构成密闭空间，并以基座的承载面为分界线把该密闭空间分为上、下腔室，设置在上腔室中，且与上腔室连通的进气口和排气口在水平方向上相对设置，工艺气体由进气口进入上腔室，由排气口排出到排气管路。并且，上、下腔体由透明石英组成，上、下腔体外部的红外加热灯透过上、下腔体朝向基座辐射能量，以使基座快速升温提供外延反应所需的能量。The existing decompression epitaxial process chamber consists of an upper chamber and a lower chamber to form a closed space, and the closed space is divided into upper and lower chambers with the bearing surface of the base as the dividing line, which is arranged in the upper chamber and is connected with the The air inlet and the exhaust port connected to the upper chamber are set opposite to each other in the horizontal direction, and the process gas enters the upper chamber through the air inlet, and is discharged to the exhaust pipeline through the exhaust port. Moreover, the upper and lower chambers are made of transparent quartz, and the infrared heating lamps outside the upper and lower chambers radiate energy toward the base through the upper and lower chambers, so that the base can be heated rapidly to provide the energy required for the epitaxial reaction.
但是，在减压的工况下，进入工艺腔室的工艺气体的扩散自由程更大，工艺气体很容易在下腔体上沉积形成沉积物，该沉积物的存在会吸收加热灯的热辐射使下腔体温度升高，从而使下腔体上更易发生沉积，形成恶性循环，当沉积物达到一定厚度时会影响腔室温场均匀性。而且，沉积物的存在还会影响高温计测温的准确性，使工艺结果产生漂移。目前，在下腔体出现一定厚度的沉积物时，必须通过腔室维护更换或清洗下腔体，这样会缩短工艺腔室的维护周期，从而导致设备在线时间缩短，生产成本增加。However, under the condition of reduced pressure, the diffusion free path of the process gas entering the process chamber is larger, and the process gas is easy to deposit on the lower chamber to form deposits. The existence of the deposits will absorb the heat radiation of the heating lamp and make the The temperature of the lower chamber rises, which makes deposition more likely to occur on the lower chamber, forming a vicious circle. When the deposit reaches a certain thickness, it will affect the uniformity of the room temperature field. Moreover, the existence of deposits will also affect the accuracy of pyrometer temperature measurement, causing drift of process results. At present, when deposits of a certain thickness appear in the lower chamber, the lower chamber must be replaced or cleaned through chamber maintenance, which will shorten the maintenance cycle of the process chamber, resulting in shortened equipment online time and increased production costs.
发明内容Contents of the invention
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种半导体工艺设备的工艺腔室组件及半导体工艺设备和方法，其可以在不进行腔室开腔维护的情况下有效去除沉积物，从而可以大大节约腔室的维护时间，延长设备在线时间，降低生产成本。The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a process chamber component of semiconductor process equipment, semiconductor process equipment and method, which can effectively remove the deposits, which can greatly save the maintenance time of the chamber, prolong the online time of the equipment, and reduce the production cost.
为实现本发明的目的而提供一种半导体工艺设备的工艺腔室组件，包括上腔体、下腔体和设置在所述上腔体和下腔体之间的用于承载晶圆的基座，所述上腔体和所述基座的承载面之间形成上腔室，所述下腔体与所述承载面之间形成下腔室，所述上腔室与所述下腔室连通，在所述上腔体和下腔体之间设置有与所述上腔室连通的第一进气口和第一排气口，所述第一排气口用于与抽气装置连通；在所述下腔体的底部设置有多个第二排气口；In order to realize the purpose of the present invention, a process chamber assembly of semiconductor process equipment is provided, including an upper chamber, a lower chamber and a base for carrying wafers arranged between the upper chamber and the lower chamber , an upper chamber is formed between the upper cavity and the bearing surface of the base, a lower chamber is formed between the lower cavity and the bearing surface, and the upper chamber communicates with the lower chamber , a first air inlet and a first exhaust port communicating with the upper chamber are provided between the upper cavity and the lower cavity, and the first exhaust port is used to communicate with the air extraction device; A plurality of second exhaust ports are provided at the bottom of the lower cavity;
所述工艺腔室组件还包括匀气结构和切换结构，其中，所述匀气结构位于所述下腔体的外部，所述匀气结构具有匀气室，所述匀气室通过所述第二排气口与所述下腔室连通，在所述匀气结构上开设有与所述匀气室连通的第三排气口，所述第三排气口用于与所述抽气装置连通；The process chamber assembly also includes a gas uniform structure and a switching structure, wherein the gas uniform structure is located outside the lower chamber, the gas uniform structure has a gas uniform chamber, and the gas uniform chamber passes through the first The second exhaust port communicates with the lower chamber, and a third exhaust port communicated with the uniform gas chamber is opened on the uniform gas structure, and the third exhaust port is used to communicate with the air extraction device connected;
所述切换结构用于选择性地将所述第一排气口和所述第三排气口中的一者与所述抽气装置连通。The switching structure is used for selectively communicating one of the first exhaust port and the third exhaust port with the air extraction device.
可选的，所述切换结构包括第一排气管路和第二排气管路，其中，所述第一排气管路的进气端与所述第一排气口连通，所述第一排气管路的出气端用于与所述抽气装置连通，且在所述第一排气管路上设置有第一通断阀；所述第二排气管路的进气端与所述第三排气口连通，所述第二排气管路的出气端用于与所述抽气装置连通，且在所述第二排气管路上设置有第二通断阀。Optionally, the switching structure includes a first exhaust pipeline and a second exhaust pipeline, wherein the intake end of the first exhaust pipeline communicates with the first exhaust port, and the second exhaust pipeline The outlet end of an exhaust pipeline is used to communicate with the air extraction device, and a first on-off valve is arranged on the first exhaust pipeline; the inlet end of the second exhaust pipeline is connected to the The third exhaust port is connected, the gas outlet end of the second exhaust pipeline is used to communicate with the suction device, and a second on-off valve is arranged on the second exhaust pipeline.
可选的，所述匀气结构包括匀气外壁，所述匀气外壁位于所述下腔体的外部，且与所述下腔体固定连接；所述匀气外壁的内表面与所述下腔体外表面的与所述匀气外壁相对的区域围成所述匀气室，所述第三排气口设置于所 述匀气外壁上。Optionally, the gas uniform structure includes a gas uniform outer wall, the gas uniform outer wall is located outside the lower cavity, and is fixedly connected with the lower cavity; the inner surface of the gas uniform outer wall is connected to the lower cavity The area of the outer surface of the cavity opposite to the gas uniform outer wall encloses the gas uniform chamber, and the third exhaust port is arranged on the gas uniform outer wall.
可选的，所述下腔体包括锥形筒部和直筒部，其中，所述锥形筒部的内径沿远离所述上腔室的方向递减；所述直筒部的上端与所述锥形筒部的下端连接；多个所述第二排气口均设置于所述锥形筒部上，且沿所述锥形筒部的周向均匀分布；Optionally, the lower chamber includes a tapered cylindrical portion and a straight cylindrical portion, wherein the inner diameter of the tapered cylindrical portion decreases gradually along the direction away from the upper chamber; the upper end of the straight cylindrical portion is connected to the tapered The lower end of the barrel part is connected; a plurality of the second exhaust ports are all arranged on the tapered barrel part, and are evenly distributed along the circumference of the tapered barrel part;
所述匀气外壁呈环状，且环绕设置于所述锥形筒部与所述直筒部的连接处，所述匀气外壁的内表面、所述锥形筒部和所述直筒部各自外表面的与所述匀气外壁相对的区域共同围成所述匀气室。The gas uniform outer wall is ring-shaped, and is arranged around the junction of the tapered cylinder part and the straight cylinder part, the inner surface of the gas uniform outer wall, the tapered cylinder part and the straight cylinder part are respectively outer The area of the surface opposite to the gas uniform outer wall jointly encloses the gas uniform chamber.
可选的，所述匀气外壁呈锥形筒状，且所述匀气外壁的内径沿远离所述上腔室的方向递减。Optionally, the outer wall of the uniform gas is in the shape of a cone, and the inner diameter of the outer wall of the uniform gas decreases gradually along the direction away from the upper chamber.
可选的，所述工艺腔室组件还包括旋转轴和用于驱动所述旋转轴旋转的驱动装置，其中，所述旋转轴的一端与所述基座连接，另一端沿远离所述上腔室的方向贯穿所述直筒部的底部，延伸至所述直筒部的外部与所述驱动装置连接；Optionally, the process chamber assembly further includes a rotating shaft and a driving device for driving the rotating shaft to rotate, wherein, one end of the rotating shaft is connected to the base, and the other end is away from the upper chamber. The direction of the chamber runs through the bottom of the straight cylinder, extends to the outside of the straight cylinder and connects with the drive device;
在所述直筒部的底部还设置有第二进气口，用于沿靠近所述上腔室的方向向所述下腔室输送吹扫气体。A second air inlet is also provided at the bottom of the straight barrel portion for delivering purge gas to the lower chamber along a direction close to the upper chamber.
可选的，所有的所述第二排气口的横截面面积之和与所述腔体外表面的与所述匀气外壁相对的区域面积的比值大于等于三分之一，且小于等于二分之一。Optionally, the ratio of the sum of the cross-sectional areas of all the second exhaust ports to the area of the area of the outer surface of the cavity opposite to the uniform gas outer wall is greater than or equal to one-third and less than or equal to half one.
可选的，所述第二排气管路上还设置有流量控制阀，所述第一排气管路与所述第二排气管路连通，且所述第二排气管路的出气端连接在所述第一通断阀的下游和所述流量控制阀的上游之间的位置处。Optionally, a flow control valve is also provided on the second exhaust pipeline, the first exhaust pipeline communicates with the second exhaust pipeline, and the gas outlet end of the second exhaust pipeline connected at a position between downstream of the first on-off valve and upstream of the flow control valve.
作为另一个技术方案，本发明还提供一种半导体工艺设备，包括本发明提供的上述工艺腔室组件。As another technical solution, the present invention also provides a semiconductor process equipment, including the above-mentioned process chamber assembly provided by the present invention.
作为另一个技术方案，本发明还提供一种半导体工艺设备的工艺方法， 应用于本发明提供的上述工艺腔室组件，所述方法包括：As another technical solution, the present invention also provides a process method for semiconductor processing equipment, which is applied to the above-mentioned process chamber assembly provided by the present invention, and the method includes:
在进行沉积工艺时，通过所述第一进气口向所述上腔室内通入工艺气体，并将所述第一排气口与所述抽气装置连通；When the deposition process is performed, a process gas is introduced into the upper chamber through the first gas inlet, and the first exhaust port is communicated with the pumping device;
在进行沉积物的原位刻蚀工艺时，通过所述第一进气口向所述上腔室通入刻蚀气体，并将所述第三排气口与所述抽气装置连通。When performing the in-situ etching process of the deposit, the etching gas is fed into the upper chamber through the first gas inlet, and the third gas outlet is communicated with the pumping device.
本发明具有以下有益效果：The present invention has the following beneficial effects:
本发明提供的半导体工艺设备的工艺腔室组件，其通过切换结构选择性地将第一排气口和第三排气口中的一者与抽气装置连通，在进行沉积工艺时，可以通过将第一排气口与抽气装置连通，使工艺气体可以通过第一进气口流入上腔室中，并在流经基座上的晶圆表面之后，可以通过第一排气口排入抽气装置；在需要刻蚀去除下腔体的内表面上的沉积物时，可以通过将第三排气口与抽气装置连通，使刻蚀气体可以通过第一进气口流入上腔室中，并通过下腔体底部的各个第二排气口排入匀气室中，再经由第三排气口排入抽气装置，刻蚀气体在流经下腔体的内表面过程中会与附着在其上的沉积物发生化学反应，从而可以在不进行腔室开腔维护的情况下，实现对沉积物的原位刻蚀，从而可以大大节约腔室的维护时间，延长设备在线时间，降低生产成本。The process chamber assembly of the semiconductor process equipment provided by the present invention selectively connects one of the first exhaust port and the third exhaust port with the pumping device through a switching structure. When performing a deposition process, the The first exhaust port communicates with the exhaust device, so that the process gas can flow into the upper chamber through the first air inlet, and after flowing through the wafer surface on the base, it can be discharged into the exhaust port through the first exhaust port. gas device; when it is necessary to etch and remove the deposits on the inner surface of the lower chamber, the third gas outlet can be communicated with the gas extraction device, so that the etching gas can flow into the upper chamber through the first gas inlet , and discharged into the uniform gas chamber through each second exhaust port at the bottom of the lower chamber, and then discharged into the exhaust device through the third exhaust port, the etching gas will be combined with the inner surface of the lower chamber during the process The deposit attached to it reacts chemically, so that the in-situ etching of the deposit can be realized without the maintenance of the chamber opening, which can greatly save the maintenance time of the chamber, prolong the online time of the equipment, and reduce the Cost of production.
本发明提供的半导体加工设备，其通过采用本发明提供的上述工艺腔室组件，可以在不进行腔室开腔维护的情况下，实现对沉积物的原位刻蚀，从而可以大大节约腔室的维护时间，延长设备在线时间，降低生产成本。The semiconductor processing equipment provided by the present invention, by adopting the above-mentioned process chamber assembly provided by the present invention, can realize in-situ etching of deposits without performing chamber opening and maintenance, thereby greatly saving the cost of the chamber. Maintenance time is extended, equipment online time is extended, and production costs are reduced.
附图说明Description of drawings
图1为本发明实施例提供的工艺腔室组件的结构示意图；FIG. 1 is a schematic structural diagram of a process chamber assembly provided by an embodiment of the present invention;
图2为本发明实施例采用的下腔体的俯视图；Fig. 2 is the top view of the lower cavity adopted in the embodiment of the present invention;
图3为本发明实施例采用的下腔体的侧视图；Fig. 3 is a side view of the lower cavity used in the embodiment of the present invention;
图4为本发明实施例提供的工艺腔室组件的气体流动路径图。Fig. 4 is a gas flow path diagram of a process chamber assembly provided by an embodiment of the present invention.
具体实施方式Detailed ways
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来对本发明提供的半导体工艺设备的工艺腔室组件及半导体工艺设备及其方法进行详细描述。In order to enable those skilled in the art to better understand the technical solutions of the present invention, the process chamber components of the semiconductor process equipment, semiconductor process equipment and methods thereof provided by the present invention will be described in detail below in conjunction with the accompanying drawings.
请参阅图1，本发明实施例提供的半导体工艺设备的工艺腔室组件，其包括上腔体11、下腔体12和设置在上腔体11和下腔体12之间的用于承载晶圆的基座5，上腔体11和基座5的承载面之间形成上腔室111，下腔体12与上述承载面之间形成下腔室112，上腔室111与下腔室112连通。也就是说，由上腔体11、下腔体12构成密闭空间，并以基座5的承载面为分界线把该密闭空间分为上腔室111与下腔室112。Please refer to FIG. 1 , the process chamber assembly of the semiconductor process equipment provided by the embodiment of the present invention, which includes an upper chamber 11, a lower chamber 12 and a device for carrying crystals arranged between the upper chamber 11 and the lower chamber 12. Round base 5, an upper chamber 111 is formed between the upper chamber 11 and the bearing surface of the base 5, a lower chamber 112 is formed between the lower chamber 12 and the above-mentioned bearing surface, and the upper chamber 111 and the lower chamber 112 connected. That is to say, the upper chamber 11 and the lower chamber 12 form a closed space, and the closed space is divided into an upper chamber 111 and a lower chamber 112 with the bearing surface of the base 5 as a boundary.
而且，在上腔体11和下腔体12之间设置有与上腔室111连通的第一进气口3和第一排气口4，第一进气口3和第一排气口4例如沿水平方向相对设置。其中，第一进气口3用于向上腔室111中通入工艺气体，该工艺气体的种类可以根据所进行的沉积工艺而设定；第一排气口4用于与抽气装置10连通，以能够排出上腔室111中的气体。Moreover, a first air inlet 3 and a first exhaust port 4 communicating with the upper chamber 111 are provided between the upper cavity 11 and the lower cavity 12, the first air inlet 3 and the first exhaust port 4 For example, they are relatively arranged along the horizontal direction. Wherein, the first gas inlet 3 is used to pass process gas into the upper chamber 111, and the type of the process gas can be set according to the deposition process carried out; the first exhaust port 4 is used to communicate with the pumping device 10 , so that the gas in the upper chamber 111 can be discharged.
在一些可选的实施例中，在上腔体11和下腔体12之间可以设置有均呈环状的上内衬22和下内衬21，上腔体11、下腔体12、上内衬22和下内衬21共同构成密闭空间，该密闭空间位于基座5的承载面以上的区域为上述上腔室111，位于该承载面以下的区域为上述下腔室112。并且，在上内衬22和下内衬21之间形成有彼此相对的第一进气口3和第一排气口4。In some optional embodiments, an annular upper lining 22 and a lower lining 21 may be provided between the upper cavity 11 and the lower cavity 12, the upper cavity 11, the lower cavity 12, the upper cavity The inner liner 22 and the lower inner liner 21 together form a closed space, the upper chamber 111 is the area above the bearing surface of the base 5 in the airtight space, and the lower chamber 112 is the area below the bearing surface. And, between the upper liner 22 and the lower liner 21 are formed a first intake port 3 and a first exhaust port 4 facing each other.
在一些可选的实施例中，上述第一进气口3和第一排气口4例如均为一个，而且可选地，为了增加气体流量，提高气体扩散效率，从而提高工艺气体在上腔室111中的分布均匀性，上述第一进气口3和第一排气口4均呈圆弧状，且沿上腔室111的周向延伸设置。当然，上述第一进气口3和第一排气口4的数量还可以为多个，且可以采用其他结构，本发明实施例对此没有 特别的限制。In some optional embodiments, the above-mentioned first gas inlet 3 and the first exhaust port 4 are, for example, one, and optionally, in order to increase the gas flow rate and improve the gas diffusion efficiency, thereby improving the flow rate of the process gas in the upper chamber The uniformity of distribution in the chamber 111 , the above-mentioned first air inlet 3 and the first air outlet 4 are arc-shaped, and extend along the circumferential direction of the upper chamber 111 . Certainly, the number of the above-mentioned first air inlet 3 and the first air outlet 4 may also be multiple, and other structures may be adopted, which is not particularly limited in the embodiment of the present invention.
而且，如图2所示，在下腔体12的底部还设置有与下腔室112连通的多个第二排气口123，用以排出下腔室112中的气体。例如，图2中示出了8个第二排气口123，可选的，多个第二排气口123沿下腔体12的周向均匀分布。这样，可以使下腔室112中的气体能够均匀地排出，从而可以使进入下腔室112中的刻蚀气体能够均匀地流过下腔体12的内表面，从而可以保证下腔体12内表面的各个位置均有较好的刻蚀效果。Moreover, as shown in FIG. 2 , a plurality of second exhaust ports 123 communicating with the lower chamber 112 are provided at the bottom of the lower chamber 12 to discharge the gas in the lower chamber 112 . For example, eight second exhaust ports 123 are shown in FIG. 2 . Optionally, multiple second exhaust ports 123 are evenly distributed along the circumference of the lower cavity 12 . In this way, the gas in the lower chamber 112 can be uniformly discharged, so that the etching gas entering the lower chamber 112 can evenly flow through the inner surface of the lower chamber 12, thereby ensuring that the inner surface of the lower chamber 12 Each position on the surface has a better etching effect.
需要说明的是，在实际应用中，多个第二排气口123可以围绕下腔体12的周向排布一圈或多圈。It should be noted that, in practical applications, the plurality of second exhaust ports 123 may be arranged around the circumference of the lower cavity 12 in one or more circles.
在一些可选的实施例中，各个第二排气口123的横截面形状包括椭圆形、圆形、三角形或者其他任意形状，优选的，各个第二排气口123的横截面形状为椭圆形或者其他长宽比大于1的形状，并且该形状的长轴沿下腔体12的径向设置，这样有助于提高气体分布均匀性。In some optional embodiments, the cross-sectional shape of each second exhaust port 123 includes oval, circular, triangular or other arbitrary shapes, preferably, the cross-sectional shape of each second exhaust port 123 is oval Or other shapes with an aspect ratio greater than 1, and the long axis of the shape is arranged along the radial direction of the lower cavity 12, which helps to improve the uniformity of gas distribution.
如图1至图3所示，上述工艺腔室组件还包括匀气结构9和切换结构，其中，匀气结构9位于下腔体12的外部，该匀气结构9具有匀气室113，该匀气室113通过第二排气口123与下腔体12连通，在匀气结构9上开设有与匀气室113连通的第三排气口(图中未示出)，该第三排气口用于与抽气装置10连通。匀气室113与各个第二排气口123连通，且上述第三排气口与匀气室113和抽气装置10均连通。这样，从各个第二排气口123排出的气体会先后经由匀气室113和第三排气口排入抽气装置10。借助匀气结构9，可以对气体起到匀流作用，从而可以提高下腔室112中的气体分布均匀性。As shown in Figures 1 to 3, the above-mentioned process chamber assembly also includes a gas uniform structure 9 and a switching structure, wherein the gas uniform structure 9 is located outside the lower cavity 12, and the gas uniform structure 9 has a gas uniform chamber 113. The uniform gas chamber 113 communicates with the lower cavity 12 through the second exhaust port 123, and a third exhaust port (not shown) communicated with the gas uniform chamber 113 is provided on the gas uniform structure 9. The third row The air port is used to communicate with the air extraction device 10 . The uniform gas chamber 113 communicates with each second exhaust port 123 , and the above-mentioned third exhaust port communicates with both the gas uniform chamber 113 and the air extraction device 10 . In this way, the gas discharged from each of the second exhaust ports 123 will be discharged into the air extraction device 10 through the uniform gas chamber 113 and the third exhaust port successively. With the help of the gas uniform structure 9 , the gas can be uniformly flowed, so that the gas distribution uniformity in the lower chamber 112 can be improved.
切换结构用于选择性地将第一排气口4和上述第三排气口中的一者与抽气装置10连通，即，在第一排气口4与抽气装置10连通时，上述第三排气口与抽气装置10断开，无法排气；在上述第三排气口与抽气装置10连通时，第一排气口4与抽气装置10断开，无法排气。The switching structure is used to selectively connect one of the first exhaust port 4 and the third exhaust port with the air extraction device 10, that is, when the first exhaust port 4 communicates with the air extraction device 10, the above-mentioned first exhaust port 4 communicates with the air extraction device 10. The three exhaust ports are disconnected from the air extraction device 10 and cannot be exhausted; when the above-mentioned third exhaust port is connected to the air extraction device 10, the first exhaust port 4 is disconnected from the air extraction device 10 and cannot be exhausted.
当进行沉积工艺时，例如进行外延生长工艺，可以利用上述切换结构将第一排气口4与抽气装置10连通，此时外延生长气体通过第一进气口3流入上腔室111中，并在流经基座5上的晶圆表面之后，可以通过第一排气口4排入抽气装置10，从而实现外延生长工艺。When performing a deposition process, such as an epitaxial growth process, the above-mentioned switching structure can be used to communicate the first exhaust port 4 with the pumping device 10. At this time, the epitaxial growth gas flows into the upper chamber 111 through the first gas inlet 3, And after flowing through the wafer surface on the susceptor 5, it can be exhausted into the exhaust device 10 through the first exhaust port 4, so as to realize the epitaxial growth process.
当下腔体12上产生一定厚度的沉积物(例如硅)时，需要进行原位刻蚀工艺，以去除该沉积物，在这种情况下，可以利用上述切换结构将上述第三排气口与抽气装置10连通，此时刻蚀气体(例如氯化氢)通过第一进气口3流入上腔室111中，其流动路径如图4中的箭头A所示，气流分为两个部分，其中一部分流经基座5表面之后，由于第一排气口4未与抽气装置10连通，无法排气，刻蚀气体会从基座5右侧经由基座5与预热环18之间的环形间隙流入下腔室112中，另一部分会从基座5左侧直接经由基座5与预热环18之间的环形间隙流入下腔室112中，然后，进入下腔室112的刻蚀气体会沿下腔体12的内表面朝第二排气口123流动，在此过程中，刻蚀气体会与附着在下腔体12的内表面上的沉积物发生化学反应，从而可以在不进行腔室开腔维护的情况下，实现对沉积物的原位刻蚀，从而可以大大节约腔室的维护时间，延长设备在线时间，降低生产成本。When a deposit (such as silicon) of a certain thickness is produced on the lower cavity 12, an in-situ etching process is required to remove the deposit. In this case, the above-mentioned switching structure can be used to connect the above-mentioned third exhaust port with The pumping device 10 is communicated. At this time, etching gas (such as hydrogen chloride) flows into the upper chamber 111 through the first gas inlet 3, and its flow path is shown by arrow A in FIG. 4. The gas flow is divided into two parts, one of which is After flowing through the surface of the susceptor 5, since the first exhaust port 4 is not in communication with the pumping device 10, it cannot be exhausted, and the etching gas will pass through the annular space between the susceptor 5 and the preheating ring 18 from the right side of the susceptor 5. The gap flows into the lower chamber 112, and another part will flow into the lower chamber 112 directly from the left side of the base 5 through the annular gap between the base 5 and the preheating ring 18, and then, the etching gas entering the lower chamber 112 It will flow toward the second exhaust port 123 along the inner surface of the lower chamber 12, and in the process, the etching gas will chemically react with the deposits attached to the inner surface of the lower chamber 12, so that the etching gas can be processed without the chamber. In the case of chamber opening maintenance, in-situ etching of deposits can be realized, which can greatly save chamber maintenance time, prolong equipment online time, and reduce production costs.
在一些可选的实施例中，如图1所示，上述切换结构包括第一排气管路7和第二排气管路8，其中，第一排气管路7的进气端与上述第一排气口4连通，第一排气管路7的出气端用于与抽气装置10连通，且在第一排气管路7上设置有第一通断阀71，用于接通或断开第一排气管路7。第二排气管路8的进气端与上述第三排气口连通，第二排气管路8的出气端用于与抽气装置10连通，且在第二排气管路8上设置有第二通断阀81。In some optional embodiments, as shown in FIG. 1, the switching structure above includes a first exhaust pipeline 7 and a second exhaust pipeline 8, wherein the intake end of the first exhaust pipeline 7 is connected to the above-mentioned The first exhaust port 4 communicates, the outlet end of the first exhaust pipeline 7 is used to communicate with the air extraction device 10, and a first on-off valve 71 is provided on the first exhaust pipeline 7 for connecting Or disconnect the first exhaust pipeline 7. The intake end of the second exhaust pipeline 8 communicates with the above-mentioned third exhaust port, and the outlet end of the second exhaust pipeline 8 is used to communicate with the air extraction device 10, and is arranged on the second exhaust pipeline 8 There is a second on-off valve 81 .
当进行沉积工艺时，可以打开第一通断阀71，并关闭第二通断阀81，以将第一排气口4与抽气装置10连通，并将上述第三排气口与抽气装置10断开；当原位刻蚀工艺时，可以打开第二通断阀81，并关闭第一通断阀71， 以将上述第三排气口与抽气装置10连通，并将第一排气口4与抽气装置10断开。When the deposition process is performed, the first on-off valve 71 can be opened, and the second on-off valve 81 can be closed to connect the first exhaust port 4 with the pumping device 10, and connect the above-mentioned third exhaust port to the pumping device 10. The device 10 is disconnected; during the in-situ etching process, the second on-off valve 81 can be opened, and the first on-off valve 71 can be closed to connect the above-mentioned third exhaust port with the air extraction device 10, and the first The exhaust port 4 is disconnected from the suction device 10 .
在一些可选的实施例中，在第一排气管路7上还设置有流量控制阀72，用于调节第一排气管路7中的气体流量，从而可以控制腔体1内的压力。In some optional embodiments, a flow control valve 72 is also provided on the first exhaust pipeline 7 to adjust the gas flow in the first exhaust pipeline 7, so that the pressure in the cavity 1 can be controlled .
在一些可选的实施例中，为了简化设备结构，降低设备成本，抽气装置10包括一个抽气泵，第一排气管路7和第二排气管路8共用该抽气泵，在这种情况下，第一排气管路7和第二排气管路8连通，且第二排气管路8的出气端连接在第一通断阀71的下游和流量控制阀72的上游之间的位置处。这样，无论是第一排气管路7被接通，还是第二排气管路8被接通，流量控制阀72均可以对腔体1的压力以及腔体1中的气体流速等的参数进行精确控制。当然，在实际应用中，抽气装置10也可以包括两个抽气泵，第一排气管路7和第二排气管路8分别与这两个抽气泵连通，而且在第一排气管路7和第二排气管路8上均设置有流量控制阀。In some optional embodiments, in order to simplify the equipment structure and reduce equipment cost, the air extraction device 10 includes an air extraction pump, and the first exhaust pipeline 7 and the second exhaust pipeline 8 share the air extraction pump. In this In this case, the first exhaust pipeline 7 communicates with the second exhaust pipeline 8, and the outlet end of the second exhaust pipeline 8 is connected between the downstream of the first on-off valve 71 and the upstream of the flow control valve 72 at the location. In this way, whether the first exhaust pipeline 7 is connected or the second exhaust pipeline 8 is connected, the flow control valve 72 can control the pressure of the cavity 1 and the gas flow rate in the cavity 1 and other parameters. for precise control. Of course, in practical applications, the air extraction device 10 can also include two air extraction pumps, the first exhaust pipeline 7 and the second exhaust pipeline 8 communicate with the two air extraction pumps respectively, and the first exhaust pipeline Both the pipeline 7 and the second exhaust pipeline 8 are provided with flow control valves.
在一些可选的实施例中，如图3所示，匀气结构9包括匀气外壁，该匀气外壁位于下腔体12的外部，且与下腔体12固定连接。并且，该匀气外壁的内表面与下腔体12外表面的与该匀气外壁相对的区域围成匀气室113，上述第三排气口设置于该匀气外壁上。匀气外壁例如可以采用焊接的方式与下腔体12固定连接。In some optional embodiments, as shown in FIG. 3 , the gas uniform structure 9 includes a gas uniform outer wall, which is located outside the lower cavity 12 and is fixedly connected to the lower cavity 12 . Moreover, the inner surface of the outer wall of the gas uniformity and the area of the outer surface of the lower chamber 12 opposite to the outer wall of the gas uniformity form a uniform gas chamber 113 , and the above-mentioned third exhaust port is arranged on the outer wall of the gas uniformity. The outer wall of the uniform gas can be fixedly connected with the lower cavity 12 by welding, for example.
在一些可选的实施例中，如图2所示，所有的第二排气口123的横截面面积之和与下腔体12外表面的与上述匀气外壁相对的区域面积(例如图2中的区域C的面积)的比值大于等于三分之一，且小于等于二分之一。通过将上述比值设定在该数值范围内，既可以避免第二排气口123的横截面面积之和过大，保证下腔体12具有较好的机械性能，又可以避免第二排气口123的横截面面积之和过小，保证对下腔体12上的沉积物进行原位刻蚀工艺具有良好的刻蚀效果。In some optional embodiments, as shown in Figure 2, the sum of the cross-sectional areas of all the second exhaust ports 123 is equal to the area of the outer surface of the lower cavity 12 opposite to the above-mentioned uniform gas outer wall (for example, in Figure 2 The ratio of the area of the area C in ) is greater than or equal to one-third and less than or equal to one-half. By setting the above-mentioned ratio within this value range, the sum of the cross-sectional areas of the second exhaust ports 123 can be avoided from being too large, ensuring that the lower cavity 12 has better mechanical properties, and the second exhaust port can be avoided. The sum of the cross-sectional areas of 123 is too small to ensure that the in-situ etching process for deposits on the lower cavity 12 has a good etching effect.
本发明实施例提供的工艺腔室组件例如可以为外延生长工艺腔室组件，在这种情况下，如图1所示，上腔体11和下腔体12均为透明材料制成，例如透明石英。在上腔体11的上方和下腔体12的下方还设置有红外加热灯6，用于透过上腔体11和下腔体12朝基座5辐射热量，以使基座5快速升温提供外延反应所需的能量。可选的，该基座5的材质例如为石墨基座，且在石墨基座的外表面覆盖有碳化硅层。此外，在上腔体11的上方和下腔体12的下方分别设置有上高温计16和下高温计17，用以分别透过上腔体11和下腔体12对晶圆表面的温度和基座5下表面的温度进行检测，以能够准确控制红外加热灯6的加热温度。上述腔体1通过采用透明石英，可以给红外加热灯6的红外辐射加热基座5、上高温计16测量晶圆表面温度和下高温计17测量基座温度提供有利的条件。The process chamber assembly provided by the embodiment of the present invention can be, for example, an epitaxial growth process chamber assembly. In this case, as shown in FIG. 1, the upper chamber 11 and the lower chamber 12 are made of transparent materials, such as quartz. An infrared heating lamp 6 is also arranged above the upper cavity 11 and below the lower cavity 12, for radiating heat toward the base 5 through the upper cavity 11 and the lower cavity 12, so that the base 5 can be rapidly heated to provide The energy required for the epitaxial reaction. Optionally, the material of the base 5 is, for example, a graphite base, and the outer surface of the graphite base is covered with a silicon carbide layer. In addition, an upper pyrometer 16 and a lower pyrometer 17 are arranged above the upper chamber 11 and below the lower chamber 12 respectively, to measure the temperature and temperature of the wafer surface through the upper chamber 11 and the lower chamber 12 respectively. The temperature of the lower surface of the base 5 is detected to accurately control the heating temperature of the infrared heating lamp 6 . By using transparent quartz in the cavity 1, favorable conditions can be provided for the infrared heating lamp 6 to heat the pedestal 5, the upper pyrometer 16 to measure the wafer surface temperature, and the lower pyrometer 17 to measure the pedestal temperature.
在一些可选的实施例中，下腔体12的上端设置有环形支撑部13，用于支撑上述上内衬22和下内衬21，可选的，该环形支撑部13采用发泡石英制成，该发泡石英可以提供更高的机械强度和具有良好的热隔离性能。In some optional embodiments, the upper end of the lower cavity 12 is provided with an annular support portion 13 for supporting the above-mentioned upper lining 22 and lower inner lining 21. Optionally, the annular support portion 13 is made of foamed quartz As a result, the foamed quartz can provide higher mechanical strength and have good thermal insulation properties.
在一些可选的实施例中，在基座5的周围环绕设置有预热环18，其可以采用与基座5相同的材料制作，用于对经由第一进气口3进入上腔室111的工艺气体起到预热作用，从而可以提高工艺气体的反应效率。并且，预热环18与基座5之间具有环形间隙，上腔室111中的气体能够经由该环形间隙流入下腔室112中。In some optional embodiments, a preheating ring 18 is provided around the base 5, which can be made of the same material as the base 5, and is used to prevent the heat from entering the upper chamber 111 through the first air inlet 3. The process gas plays a preheating role, which can improve the reaction efficiency of the process gas. Moreover, there is an annular gap between the preheating ring 18 and the base 5 , through which the gas in the upper chamber 111 can flow into the lower chamber 112 .
在一些可选的实施例中，如图3所示，下腔体12包括锥形筒部121和直筒部122，其中，锥形筒部121的内径沿远离上腔室111的方向(例如由上而下)递减，其例如呈漏斗状，这样可以使下腔体12的整体具有更好的耐压能力。直筒部122的上端与锥形筒部121的下端连接，例如连为一体；多个第二排气口123均设置于锥形筒部121上，且沿锥形筒部121的周向均匀分布，这样在对下腔体12上的沉积物进行原位刻蚀工艺时，有助于使刻蚀气 体能够流经下腔体12内表面的各个位置处，从而可以保证下腔体12内表面的各个位置均有较好的刻蚀效果。可选的，多个第二排气口123均位于靠近锥形筒部121的下端的位置处，以使刻蚀气体能够流经下腔体12内表面的各个位置处。In some optional embodiments, as shown in FIG. 3 , the lower chamber 12 includes a tapered cylindrical portion 121 and a straight cylindrical portion 122, wherein the inner diameter of the tapered cylindrical portion 121 is along a direction away from the upper chamber 111 (for example, by from top to bottom), which is funnel-shaped, for example, so that the lower cavity 12 as a whole can have better pressure resistance. The upper end of the straight barrel portion 122 is connected to the lower end of the tapered barrel portion 121, such as being integrated; a plurality of second exhaust ports 123 are all arranged on the tapered barrel portion 121, and are evenly distributed along the circumferential direction of the tapered barrel portion 121 , so that when the deposit on the lower cavity 12 is subjected to an in-situ etching process, it helps to enable the etching gas to flow through various positions on the inner surface of the lower cavity 12, thereby ensuring that the inner surface of the lower cavity 12 Each position has a better etching effect. Optionally, a plurality of second exhaust ports 123 are all located near the lower end of the tapered barrel portion 121 , so that the etching gas can flow through various positions on the inner surface of the lower cavity 12 .
在一些可选的实施例中，如图3所示，匀气结构9中，匀气外壁呈环状，且环绕设置于锥形筒部121与直筒部122的连接处，该匀气外壁的内表面、锥形筒部121和直筒部122各自外表面的与匀气外壁相对的区域共同围成上述匀气室113。可选的，上述匀气外壁呈锥形筒状，且匀气外壁的内径沿远离上腔室111的方向(例如由上而下)递减，这样可以减小匀气结构9的占用空间，简化匀气结构9，从而可以避免匀气结构9干扰红外加热灯6的辐射。当然，上述匀气外壁的结构并不局限于此，在实际应用中，上述匀气外壁还可以呈直筒状(底部封闭)、弧形圆筒状、不规则筒状或者其他任意形状，本发明实施例对此没有特别的限制。In some optional embodiments, as shown in FIG. 3 , in the gas uniform structure 9 , the gas uniform outer wall is ring-shaped, and is arranged around the junction of the tapered cylinder part 121 and the straight cylinder part 122 , and the gas uniform outer wall The inner surface, the area of the respective outer surfaces of the tapered cylindrical portion 121 and the straight cylindrical portion 122 , which are opposite to the outer wall of the gas uniformity, together define the gas uniformity chamber 113 . Optionally, the above-mentioned gas uniform outer wall is in the shape of a conical cylinder, and the inner diameter of the gas uniform outer wall decreases along the direction away from the upper chamber 111 (for example, from top to bottom), so that the occupied space of the gas uniform structure 9 can be reduced, simplifying The gas uniform structure 9 can prevent the gas uniform structure 9 from interfering with the radiation of the infrared heating lamp 6 . Of course, the structure of the above-mentioned uniform gas outer wall is not limited thereto. In practical applications, the above-mentioned gas uniform outer wall can also be straight cylindrical (closed at the bottom), arc cylindrical, irregular cylindrical or other arbitrary shapes. The present invention The embodiment has no particular limitation on this.
在一些可选的实施例中，如图1所示，工艺腔室组件还包括旋转轴14和用于驱动该旋转轴14旋转的驱动装置15，其中，旋转轴14的一端与基座5连接，另一端沿远离上腔室111的方向(例如竖直向下)贯穿直筒部122的底部，延伸至直筒部122的外部与驱动装置15连接。在进行沉积工艺时，在驱动装置15的驱动下，旋转轴14可以带动基座5旋转，从而可以使上腔室111的温场和气流场更加均匀。In some optional embodiments, as shown in FIG. 1 , the process chamber assembly further includes a rotating shaft 14 and a driving device 15 for driving the rotating shaft 14 to rotate, wherein one end of the rotating shaft 14 is connected to the base 5 , and the other end runs through the bottom of the straight barrel 122 in a direction away from the upper chamber 111 (for example, vertically downward), and extends to the outside of the straight barrel 122 to connect with the driving device 15 . During the deposition process, driven by the driving device 15 , the rotating shaft 14 can drive the base 5 to rotate, so that the temperature field and air flow field of the upper chamber 111 can be made more uniform.
在一些可选的实施例中，如图1所示，在直筒部122的底部还设置有第二进气口(图中未示出)，用于沿靠近上腔室111的方向(例如由下而上)向下腔室112输送吹扫气体。当进行沉积工艺时，例如进行外延生长工艺，通过经由第二进气口由下而上向下腔室112输送吹扫气体，可以保护旋转轴14的位于直筒部122内的部分(一般为金属材质)不被工艺气体腐蚀，从而可以提高旋转轴14的使用寿命。In some optional embodiments, as shown in FIG. 1 , a second air inlet (not shown in the figure) is also provided at the bottom of the straight cylinder portion 122, for Bottom-up) delivers purge gas to the lower chamber 112 . When performing a deposition process, such as an epitaxial growth process, by sending purge gas from bottom to top to the lower chamber 112 through the second gas inlet, the part of the rotating shaft 14 located in the straight cylinder part 122 (generally metal Material) is not corroded by the process gas, so that the service life of the rotating shaft 14 can be improved.
当进行沉积工艺时，吹扫气体在进入下腔室112之后，通过预热环18和基座5之间的环形间隙进入上腔室111，然后从第一排气口4排出。当对下腔体12上的沉积物进行原位刻蚀工艺时，吹扫气体仍然需要通入直筒部122，以保护旋转轴14的位于直筒部122内的部分，但是由于各个第二排气口123均位于靠近锥形筒部121的下端的位置处，这使得从直筒部122流出的吹扫气体可以直接经由各个第二排气口123排出，而不会对刻蚀气体的流动产生任何干扰，吹扫气体的流动路径如图4中的箭头B所示。需要说明的是，上述直筒部122环绕在旋转轴14的周围，有助于吹扫气体对旋转轴14进行保护。When the deposition process is performed, the purge gas enters the lower chamber 112 , enters the upper chamber 111 through the annular gap between the preheating ring 18 and the susceptor 5 , and then is discharged from the first exhaust port 4 . When performing an in-situ etching process on the deposits on the lower cavity 12, the purge gas still needs to pass into the straight barrel 122 to protect the part of the rotating shaft 14 inside the straight barrel 122, but due to the The ports 123 are all located near the lower end of the tapered barrel portion 121, so that the purge gas flowing out of the straight barrel portion 122 can be directly discharged through each second exhaust port 123 without any impact on the flow of the etching gas. interference, the flow path of the purge gas is shown by arrow B in Figure 4. It should be noted that the above-mentioned straight cylindrical portion 122 surrounds the rotating shaft 14 and helps the purge gas to protect the rotating shaft 14 .
综上所述，本发明实施例提供的半导体工艺设备的工艺腔室组件，其通过切换结构选择性地将第一排气口和第三排气口中的一者与抽气装置连通，在进行沉积工艺时，可以通过将第一排气口与抽气装置连通，使沉积工艺气体可以通过第一进气口流入上腔室中，并在流经基座上的晶圆表面之后，可以通过第一排气口排入抽气装置；在需要刻蚀去除下腔体的内表面上的沉积物时，可以通过将第三排气口与抽气装置连通，使刻蚀气体可以通过第一进气口流入上腔室中，并通过下腔体底部的各个第二排气口排入匀气室中，再经由第三排气口排入抽气装置，刻蚀气体在流经下腔体的内表面过程中会与附着在其上的沉积物发生化学反应，从而可以在不进行腔室开腔维护的情况下，实现对沉积物的原位刻蚀，从而可以大大节约腔室的维护时间，延长设备在线时间，降低生产成本。To sum up, the process chamber assembly of the semiconductor process equipment provided by the embodiment of the present invention selectively connects one of the first exhaust port and the third exhaust port with the exhaust device through a switching structure, and performs During the deposition process, the deposition process gas can flow into the upper chamber through the first air inlet by connecting the first exhaust port with the pumping device, and after flowing through the wafer surface on the base, it can pass through The first exhaust port is discharged into the air extraction device; when it is necessary to etch and remove the deposits on the inner surface of the lower cavity, the third exhaust port can be communicated with the air extraction device so that the etching gas can pass through the first exhaust port. The gas inlet flows into the upper chamber, and is discharged into the uniform gas chamber through each second exhaust port at the bottom of the lower chamber, and then discharged into the suction device through the third exhaust port, and the etching gas flows through the lower chamber The inner surface of the body will chemically react with the deposits attached to it, so that the in-situ etching of the deposits can be realized without the maintenance of the chamber opening, which can greatly save the maintenance of the chamber Time, prolong equipment online time, reduce production cost.
作为另一个技术方案，本发明实施例还提供一种半导体工艺设备，其包括本发明实施例提供的上述工艺腔室组件，该工艺腔室组件例如采用图1所示的工艺腔室组件，由于该工艺腔室组件的结构和功能在上文中已有了详细描述，在此不再赘述。As another technical solution, an embodiment of the present invention also provides a semiconductor process equipment, which includes the above-mentioned process chamber assembly provided by the embodiment of the present invention. The process chamber assembly is, for example, the process chamber assembly shown in FIG. 1 , because The structure and function of the process chamber components have been described in detail above, and will not be repeated here.
本发明实施例提供的半导体加工设备，其通过采用本发明实施例提供的 上述工艺腔室组件，可以在不进行腔室开腔维护的情况下，实现对沉积物的原位刻蚀，从而可以大大节约腔室的维护时间，延长设备在线时间，降低生产成本。The semiconductor processing equipment provided by the embodiment of the present invention can achieve in-situ etching of deposits without performing chamber opening maintenance by using the above-mentioned process chamber assembly provided by the embodiment of the present invention, thereby greatly improving the Save chamber maintenance time, extend equipment online time, and reduce production costs.
作为另一个技术方案，本发明实施例还提供一种半导体工艺设备的工艺方法，其应用于本发明实施例提供的上述工艺腔室组件，以图1示出的工艺腔室组件为例，该半导体工艺方法包括：As another technical solution, an embodiment of the present invention also provides a semiconductor process equipment processing method, which is applied to the above-mentioned process chamber assembly provided by the embodiment of the present invention. Taking the process chamber assembly shown in FIG. 1 as an example, the Semiconductor process methods include:
在进行沉积工艺时，例如进行外延生长工艺，通过第一进气口3向上腔室111内通入工艺气体，并将第一排气口4与抽气装置10连通；此时工艺气体通过第一进气口3流入上腔室111中，并在流经基座5上的晶圆表面之后，可以通过第一排气口4排入抽气装置10，从而实现外延生长工艺。When performing a deposition process, such as an epitaxial growth process, a process gas is introduced into the upper chamber 111 through the first gas inlet 3, and the first exhaust port 4 is communicated with the pumping device 10; at this time, the process gas passes through the first gas inlet 3 An air inlet 3 flows into the upper chamber 111 , and after flowing through the surface of the wafer on the base 5 , it can be exhausted into the exhaust device 10 through the first exhaust port 4 , so as to realize the epitaxial growth process.
在进行沉积物的原位刻蚀工艺时，通过第一进气口3向上腔室111通入刻蚀气体(例如氯化氢)，并将第三排气口与抽气装置10连通。此时刻蚀气体通过第一进气口3流入上腔室111中，其流动路径如图4中的箭头A所示，气流分为两个部分，其中一部分流经基座5表面之后，由于第一排气口4未与抽气装置10连通，无法排气，刻蚀气体会从基座5右侧经由基座5与预热环18之间的环形间隙流入下腔室112中，另一部分会从基座5左侧直接经由基座5与预热环18之间的环形间隙流入下腔室112中，然后，进入下腔室112的刻蚀气体会沿下腔体12的内表面朝第二排气口123流动，在此过程中，刻蚀气体会与附着在下腔体12的内表面上的沉积物发生化学反应，从而可以在不进行腔室开腔维护的情况下，实现对沉积物的原位刻蚀，从而可以大大节约腔室的维护时间，延长设备在线时间，降低生产成本。When performing the in-situ etching process of deposits, an etching gas (such as hydrogen chloride) is introduced into the upper chamber 111 through the first gas inlet 3 , and the third gas exhaust port is communicated with the exhaust device 10 . At this time, the etching gas flows into the upper chamber 111 through the first gas inlet 3, and its flow path is shown by arrow A in FIG. One exhaust port 4 is not in communication with the exhaust device 10, so it cannot be exhausted. The etching gas will flow into the lower chamber 112 from the right side of the base 5 through the annular gap between the base 5 and the preheating ring 18, and the other part Will directly flow into the lower chamber 112 from the left side of the base 5 through the annular gap between the base 5 and the preheating ring 18, and then, the etching gas entering the lower chamber 112 will flow along the inner surface of the lower chamber 12 towards The second exhaust port 123 flows, and during this process, the etching gas will chemically react with the deposits attached to the inner surface of the lower chamber 12, so that the deposition can be realized without performing chamber opening maintenance. The in-situ etching of objects can greatly save the maintenance time of the chamber, prolong the online time of the equipment, and reduce the production cost.
本发明实施例提供的半导体工艺设备的工艺方法，其通过采用本发明提供的上述工艺腔室组件，可以在不进行腔室开腔维护的情况下，实现对沉积物的原位刻蚀，从而可以大大节约腔室的维护时间，延长设备在线时间，降低生产成本。The process method of the semiconductor process equipment provided by the embodiment of the present invention, by using the above-mentioned process chamber assembly provided by the present invention, can realize in-situ etching of deposits without performing chamber opening maintenance, so that It greatly saves the maintenance time of the chamber, prolongs the online time of the equipment, and reduces the production cost.
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。It can be understood that, the above embodiments are only exemplary embodiments adopted for illustrating the principle of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also regarded as the protection scope of the present invention.

Claims (10)

  1. 一种半导体工艺设备的工艺腔室组件，包括上腔体、下腔体和设置在所述上腔体和下腔体之间的用于承载晶圆的基座，所述上腔体和所述基座的承载面之间形成上腔室，所述下腔体与所述承载面之间形成下腔室，所述上腔室与所述下腔室连通，其特征在于，在所述上腔体和下腔体之间设置有与所述上腔室连通的第一进气口和第一排气口，所述第一排气口用于与抽气装置连通；在所述下腔体的底部设置有多个第二排气口；A process chamber assembly of a semiconductor process equipment, comprising an upper chamber, a lower chamber and a base for carrying a wafer arranged between the upper chamber and the lower chamber, the upper chamber and the An upper chamber is formed between the bearing surfaces of the base, a lower chamber is formed between the lower cavity and the bearing surface, and the upper chamber communicates with the lower chamber, and it is characterized in that, in the A first air inlet and a first exhaust port communicating with the upper chamber are provided between the upper cavity and the lower cavity, and the first exhaust port is used to communicate with the air extraction device; The bottom of the cavity is provided with a plurality of second exhaust ports;
    所述工艺腔室组件还包括匀气结构和切换结构，其中，所述匀气结构位于所述下腔体的外部，所述匀气结构具有匀气室，所述匀气室通过所述第二排气口与所述下腔室连通，在所述匀气结构上开设有与所述匀气室连通的第三排气口，所述第三排气口用于与所述抽气装置连通；The process chamber assembly also includes a gas uniform structure and a switching structure, wherein the gas uniform structure is located outside the lower chamber, the gas uniform structure has a gas uniform chamber, and the gas uniform chamber passes through the first The second exhaust port communicates with the lower chamber, and a third exhaust port communicated with the uniform gas chamber is opened on the uniform gas structure, and the third exhaust port is used to communicate with the air extraction device connected;
    所述切换结构用于选择性地将所述第一排气口和所述第三排气口中的一者与所述抽气装置连通。The switching structure is used for selectively communicating one of the first exhaust port and the third exhaust port with the air extraction device.
  2. 根据权利要求1所述的工艺腔室组件，其特征在于，所述切换结构包括第一排气管路和第二排气管路，其中，所述第一排气管路的进气端与所述第一排气口连通，所述第一排气管路的出气端用于与所述抽气装置连通，且在所述第一排气管路上设置有第一通断阀；所述第二排气管路的进气端与所述第三排气口连通，所述第二排气管路的出气端用于与所述抽气装置连通，且在所述第二排气管路上设置有第二通断阀。The process chamber assembly according to claim 1, wherein the switching structure comprises a first exhaust pipeline and a second exhaust pipeline, wherein the inlet end of the first exhaust pipeline is connected to the The first exhaust port is connected, the outlet end of the first exhaust pipeline is used to communicate with the air extraction device, and a first on-off valve is arranged on the first exhaust pipeline; The inlet end of the second exhaust pipeline communicates with the third exhaust port, the outlet end of the second exhaust pipeline is used to communicate with the air extraction device, and is connected to the second exhaust pipe. A second on-off valve is provided on the road.
  3. 根据权利要求1或2所述的工艺腔室组件，其特征在于，所述匀气结构包括匀气外壁，所述匀气外壁位于所述下腔体的外部，且与所述下腔体固定连接；所述匀气外壁的内表面与所述下腔体外表面的与所述匀气外壁相对的区域围成所述匀气室，所述第三排气口设置于所述匀气外壁上。The process chamber assembly according to claim 1 or 2, wherein the gas uniform structure comprises a gas uniform outer wall, and the gas uniform outer wall is located outside the lower cavity and is fixed to the lower cavity connection; the inner surface of the outer wall of the uniform gas and the area of the outer surface of the lower cavity opposite to the outer wall of the uniform gas surround the uniform gas chamber, and the third exhaust port is arranged on the outer wall of the uniform gas .
  4. 根据权利要求3所述的工艺腔室组件，其特征在于，所述下腔体包括锥形筒部和直筒部，其中，所述锥形筒部的内径沿远离所述上腔室的方向递减；所述直筒部的上端与所述锥形筒部的下端连接；多个所述第二排气口均设置于所述锥形筒部上，且沿所述锥形筒部的周向均匀分布；The process chamber assembly according to claim 3, wherein the lower chamber comprises a tapered cylindrical portion and a straight cylindrical portion, wherein the inner diameter of the tapered cylindrical portion decreases gradually in a direction away from the upper chamber The upper end of the straight barrel part is connected to the lower end of the tapered barrel part; a plurality of the second exhaust ports are all arranged on the tapered barrel part, and are evenly distributed along the circumferential direction of the tapered barrel part distributed;
    所述匀气外壁呈环状，且环绕设置于所述锥形筒部与所述直筒部的连接处，所述匀气外壁的内表面、所述锥形筒部和所述直筒部各自外表面的与所述匀气外壁相对的区域共同围成所述匀气室。The gas uniform outer wall is ring-shaped, and is arranged around the junction of the tapered cylinder part and the straight cylinder part, the inner surface of the gas uniform outer wall, the tapered cylinder part and the straight cylinder part are respectively outer The area of the surface opposite to the gas uniform outer wall jointly encloses the gas uniform chamber.
  5. 根据权利要求4所述的工艺腔室组件，其特征在于，所述匀气外壁呈锥形筒状，且所述匀气外壁的内径沿远离所述上腔室的方向递减。The process chamber assembly according to claim 4, wherein the gas uniform outer wall is in the shape of a cone, and the inner diameter of the gas uniform outer wall decreases along a direction away from the upper chamber.
  6. 根据权利要求4所述的工艺腔室组件，其特征在于，所述工艺腔室组件还包括旋转轴和用于驱动所述旋转轴旋转的驱动装置，其中，所述旋转轴的一端与所述基座连接，另一端沿远离所述上腔室的方向贯穿所述直筒部的底部，延伸至所述直筒部的外部与所述驱动装置连接；The process chamber assembly according to claim 4, wherein the process chamber assembly further comprises a rotating shaft and a driving device for driving the rotating shaft to rotate, wherein one end of the rotating shaft is connected to the The base is connected, and the other end passes through the bottom of the straight cylinder in a direction away from the upper chamber, and extends to the outside of the straight cylinder to connect with the driving device;
    在所述直筒部的底部还设置有第二进气口，用于沿靠近所述上腔室的方向向所述下腔室输送吹扫气体。A second air inlet is also provided at the bottom of the straight barrel portion for delivering purge gas to the lower chamber along a direction close to the upper chamber.
  7. 根据权利要求3所述的工艺腔室组件，其特征在于，所有的所述第二排气口的横截面面积之和与所述腔体外表面的与所述匀气外壁相对的区域面积的比值大于等于三分之一，且小于等于二分之一。The process chamber assembly according to claim 3, wherein the ratio of the sum of the cross-sectional areas of all the second exhaust ports to the area of the outer surface of the chamber opposite to the uniform gas outer wall Greater than or equal to one-third, and less than or equal to one-half.
  8. 根据权利要求2所述的工艺腔室组件，其特征在于，所述第二排气管路上还设置有流量控制阀，所述第一排气管路与所述第二排气管路连通，且所述第二排气管路的出气端连接在所述第一通断阀的下游和所述流量控制阀的上游之间的位置处。The process chamber assembly according to claim 2, wherein a flow control valve is further arranged on the second exhaust pipeline, the first exhaust pipeline communicates with the second exhaust pipeline, And the gas outlet end of the second exhaust pipeline is connected at a position between the downstream of the first on-off valve and the upstream of the flow control valve.
  9. 一种半导体工艺设备，其特征在于，包括权利要求1-8任意一项所述的工艺腔室组件。A semiconductor process equipment, characterized by comprising the process chamber assembly described in any one of claims 1-8.
  10. 一种半导体工艺设备的工艺方法，其特征在于，应用于权利要求1-8任意一项所述的工艺腔室组件，所述方法包括：A process method for semiconductor process equipment, characterized in that it is applied to the process chamber assembly described in any one of claims 1-8, the method comprising:
    在进行沉积工艺时，通过所述第一进气口向所述上腔室内通入工艺气体，并将所述第一排气口与所述抽气装置连通；When the deposition process is performed, a process gas is introduced into the upper chamber through the first gas inlet, and the first exhaust port is communicated with the pumping device;
    在进行沉积物的原位刻蚀工艺时，通过所述第一进气口向所述上腔室通入刻蚀气体，并将所述第三排气口与所述抽气装置连通。When performing the in-situ etching process of the deposit, the etching gas is fed into the upper chamber through the first gas inlet, and the third gas outlet is communicated with the pumping device.
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