CN111943132A - Method for plane expansion of a fragmented sample and plane expanded fragmented sample - Google Patents
Method for plane expansion of a fragmented sample and plane expanded fragmented sample Download PDFInfo
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- CN111943132A CN111943132A CN202010834812.1A CN202010834812A CN111943132A CN 111943132 A CN111943132 A CN 111943132A CN 202010834812 A CN202010834812 A CN 202010834812A CN 111943132 A CN111943132 A CN 111943132A
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- 238000000034 method Methods 0.000 title claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 239000012634 fragment Substances 0.000 claims abstract description 52
- 238000012545 processing Methods 0.000 claims abstract description 29
- 239000000945 filler Substances 0.000 claims abstract description 24
- 238000003825 pressing Methods 0.000 claims abstract description 11
- 239000003292 glue Substances 0.000 claims description 18
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 12
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 238000001312 dry etching Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 3
- -1 polydimethylsiloxane Polymers 0.000 claims description 3
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 3
- 229920001187 thermosetting polymer Polymers 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 11
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910003460 diamond Inorganic materials 0.000 description 11
- 239000010432 diamond Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000012761 high-performance material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/00373—Selective deposition, e.g. printing or microcontact printing
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a plane expansion method of a fragment sample and the fragment sample subjected to plane expansion. Wherein, the method comprises the following steps: obtaining a first planar substrate and a second planar substrate, wherein the first planar substrate and the second planar substrate are both planar substrates with smooth surfaces and the size larger than that of the fragment sample; placing the debris sample on a first planar substrate; obtaining a clamp, wherein the clamp is provided with a hollow device which is used for accommodating a fragment sample; pressing the clamp on a first plane substrate, wherein the hollow arrangement of the clamp is sleeved on the fragment substrate; applying a filler to the hollow portion of the jig; pressing the second planar substrate on a fixture; and stripping the first planar substrate and the second planar substrate to obtain a fragment sample after planar expansion. The method is simple to implement, improves the uniformity of small-size fragment samples in the photoresist homogenizing process, particularly the photoresist at the edges of the small-size samples, enables the fragment samples to be compatible with the existing wafer processing equipment, and reduces the processing cost.
Description
Technical Field
The invention relates to the technical field of micro-nano manufacturing and processing, in particular to a plane expansion method of a fragment sample and the fragment sample subjected to plane expansion.
Background
The micro-nano processing technology refers to the optimization design, processing, assembly, system integration and the like of elements and parts or systems formed by the elements on the scale of submillimeter, micron and nanometer, relates to a plurality of fields and disciplines, and is an important component part for advanced manufacturing. Nowadays, research and exploration can be carried out on new materials, new devices and new functions based on micro-nano processing technology, so that technological progress is promoted and industrial development is promoted. However, some processing difficulties are inevitably encountered during the processing.
In the process of implementing the concept of the present invention, the inventor finds that at least the following problems exist in the related art, for the research and manufacture of some novel high performance material devices, because of the limited material preparation technology and cost limitation, the standard-sized wafers cannot be provided, the processing of samples with the size of 2 inches or less is often involved, and the processing of samples with the small size is faced with many problems at present. For example, the uniformity of the photoresist leveling is poor, the compatibility of the processing equipment and the sample is poor, the operability of the processing process is poor, and the like.
Disclosure of Invention
Technical problem to be solved
The present invention provides a method of planar expansion of a fragment sample and a planar expanded fragment sample to at least partially solve the above problems.
(II) technical scheme
One aspect of the present invention provides a method of planar expansion of a fragmented sample, comprising: obtaining a first planar substrate and a second planar substrate, wherein the first planar substrate and the second planar substrate are both planar substrates with smooth surfaces and the size larger than that of the fragment sample; placing the debris sample on the first planar substrate; obtaining a fixture having a hollow setting for receiving the debris sample; pressing the clamp on the first planar substrate, wherein the hollow arrangement of the clamp is sleeved on the fragment substrate; applying a filler at the hollow location of the fixture; pressing the second planar substrate onto the fixture; and stripping the first planar substrate and the second planar substrate to obtain the fragment sample after planar expansion.
Optionally, the material of the first planar substrate and the second planar substrate comprises polydimethylsiloxane.
Optionally, the obtaining jig comprises: the clamp is obtained through the modes of mechanical processing, laser processing, wet etching and dry etching.
Optionally, the material of the clamp comprises silicon, glass or metal.
Optionally, the shape and size of the clamp are selected and adapted according to the requirements of the processing equipment on the shape and size of the sample; the shape of the clamp comprises a square, a rectangle or a circle.
Optionally, the filler comprises uv glue, polymethylmethacrylate, or thermosetting glue.
Optionally, applying a filler at the hollow location of the fixture further comprises: and waiting for a first preset time to enable the filler to spread on the clamp.
Optionally, pressing the second planar substrate onto the holder further comprises: waiting a second preset time for the filler to completely fill the gap between the fragment sample, the first planar substrate, the second planar substrate and the clamp.
Optionally, pressing the second planar substrate onto the holder further comprises: and waiting for a third preset time under a preset environment to solidify the filler.
Another aspect of the invention provides a flat extended chip sample obtained by the method described above.
(III) advantageous effects
The plane expansion method of the fragment sample and the fragment sample subjected to plane expansion have the following beneficial effects:
(1) the invention provides a plane expanding method for small-size fragment samples, overcomes the defects of the prior art, and can solve the technical problems of uneven glue homogenizing, difficult operation and the like in the processing process of the existing small-size fragment samples;
(2) compared with the prior art, the method has the advantages that the process is simple, the plane expansion of the small-size fragment sample is realized, the uniformity of the small-size fragment sample, particularly the edge glue homogenizing is improved, the method is compatible with the mainstream equipment of the prior art, the micro-nano processing of the small-size fragment sample is convenient, and the processing cost is reduced.
Drawings
FIG. 1 schematically illustrates a flow diagram of a method of planar expansion of a debris sample according to an embodiment of the invention;
FIG. 2 schematically illustrates a block diagram of a fixture according to an embodiment of the invention; and
fig. 3 to 7 schematically show specific example views of plane expansion of a chip sample according to an embodiment of the present invention.
In the figure:
planar substrate 1 diamond chips 2
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. It is to be understood that such description is merely illustrative and not intended to limit the scope of the present invention. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the invention. It may be evident, however, that one or more embodiments may be practiced without these specific details. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The terms "comprises," "comprising," and the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It is noted that the terms used herein should be interpreted as having a meaning that is consistent with the context of this specification and should not be interpreted in an idealized or overly formal sense.
The small-sized samples at present may include, for example, aluminum nitride, which is called fourth generation semiconductor material with a forbidden band width of more than 3.5eV, semiconductor diamond, gallium oxide, cubic boron nitride, zinc beryllium oxide, and the like. For example, the research on the fabrication of quantum sensors based on spin defects in crystals can also be applied to small-sized crystals with electronic purity, such as diamond, silicon nitride, and boron nitride, for micro-nano fabrication.
In the process of implementing the invention, the inventor finds that the standard of the micro-nano manufacturing industry mainly aims at large-size wafers, such as 8-inch or 12-inch standard commonly used in the semiconductor industry. And the compatibility problem of processing equipment occurs when small-size fragment samples are processed, and the equipment customization cost is huge.
In the process of implementing the invention, the inventor also finds that the small-size fragment sample is often difficult to ensure the photoresist uniformity under the influence of the tension of the fragment edge, and the stability and quality of the subsequent photoetching process are directly influenced by the uniformity of the photoresist in the micro-nano processing.
In the process of implementing the invention, the inventor also finds that the fragment sample in actual operation is difficult to be independently operated due to small size and is easy to lose.
Furthermore, in carrying out the present invention, the inventors have also found that there are two main ways to machine small size chip samples at present. The first method is to stick small-sized fragment samples on a clamp substrate with a larger size, but the stuck fragment samples are not particularly smooth, the edges of the fragments and a base are stepped, the glue coating thickness and particularly the edges of the fragments are still uneven, the exposure dose at each position is different during photoetching exposure, a good pattern cannot be obtained, and the pattern is easy to fall off during pattern development and even influences other part patterns so as to influence the subsequent etching process. The second is to customize or modify the processing equipment, design some special fixtures, such as fixtures with vacuum adsorption structure, or adopt processes such as glue spraying during glue leveling, but this will greatly increase the research and processing costs.
In view of the above, an embodiment of the present invention provides a method for plane expansion of a fragmented sample.
Fig. 1 schematically shows a flow chart of a method of plane expansion of a debris sample according to an embodiment of the present invention.
As shown in fig. 1, the method includes operations S101 to S107.
In operation S101, a first planar substrate and a second planar substrate are obtained, where the first planar substrate and the second planar substrate are both planar substrates with smooth surfaces and sizes larger than the size of the debris sample.
In operation S102, a debris sample is placed on a first planar substrate.
According to the embodiment of the present invention, the material of the planar substrate (including the first planar substrate and the second planar substrate) may be PDMS (polydimethylsiloxane), and the size and shape thereof may be adjusted according to actual situations.
According to the embodiment of the invention, two plane substrates with smooth surfaces and larger size than the small-size fragment sample are prepared, and the small-size fragment sample is placed on one of the plane substrates.
In operation S103, a clamp is obtained, the clamp having a hollow arrangement for receiving a debris sample.
In operation S104, the jig is pressed on the first planar substrate, and the hollow set of the jig is fitted over the fragmented substrate;
according to the embodiment of the invention, the clamp is manufactured by a precision machining process, such as machining, laser machining, wet etching, dry etching and the like. The material of the clamp is silicon, glass or metal, preferably silicon. The shape and the size of the clamp are selected and adapted according to the requirements of processing equipment on the shape and the size of the sample; the shape of the clamp comprises a square, a rectangle or a circle, and other figures can be adopted.
According to the embodiment of the invention, on the basis of the operation, according to the size of the fragment sample, a proper clamp is selected and sleeved on the fragment sample. Wherein the size of the clamp is larger than that of the fragment sample.
In operation S105, a filler is applied at the hollow setting of the jig;
in operation S106, the second planar substrate is pressed onto the jig;
according to an embodiment of the invention, the filler is a plastic filler, which may be, for example, uv glue, PMMA or thermosetting glue, preferably uv glue.
According to the embodiment of the invention, on the basis of the operation, a plastic filler is applied in a spot mode, and then another plane substrate is pressed on the clamp.
In operation S107, the first and second planar substrates are peeled off to obtain a debris sample after planar expansion.
Through the specific embodiment, the plane expansion of the small-size fragment sample can be realized through a simpler and low-cost method, so that the glue homogenizing uniformity of the small-size fragment sample is improved, the main flow equipment for processing is compatible, and the convenient micro-nano processing of the small-size fragment sample is realized.
According to other embodiments of the present invention, in operation S105, the method further includes waiting for a first preset time to allow the filler to spread over the clamp.
According to other embodiments of the present invention, in operation S106, waiting for a second preset time for the filler to completely fill the gap between the debris sample, the two planar substrates and the clamp is further included.
According to other embodiments of the present invention, in operation S107, the method further includes waiting for a third preset time under the preset environment to cure the filler. Specifically, the plastic filler is cured and shaped according to the filler property, and the plastic filler is not adhered to the two planar substrates in step S101 after being cured and shaped, or is easily separated after being adhered. And then removing the planar substrate after the shaping is finished and taking out the fragment clamp.
The materials, manufacturing processes, dimensions, sizes, installation manners, waiting times required for implementation, and the like of the respective components are adjusted according to actual conditions, and are not limited herein. The manufacturing flow in the specific implementation is not limited to the above.
In order to further illustrate the present invention, the following describes a method for expanding the plane of a small-sized fragment sample according to the present invention in detail with reference to specific examples.
FIG. 2 schematically shows a block diagram of a fixture according to an embodiment of the invention.
This example provides two flat cured PDMS planar substrates 1, diamond chips 2, a "square" silicon jig 3 as shown in figure 2, and uv glue fill 4. The PDMS planar substrate is a square with a side length of about 15mm and a thickness of about 2mm, and the diamond is a square fragment with a side length of 2mm and a thickness of 0.5 mm. The side length of an external square of the square-shaped silicon clamp is 10mm, the side length of a central square of the square-shaped silicon clamp is 3mm, and the thickness of the silicon clamp is 0.5 mm. Wherein PDMS can be prepared by commercially available materials, and the silicon clamp shaped like the Chinese character 'hui' is obtained by laser processing.
Fig. 3 to 7 schematically show specific example views of plane expansion of a chip sample according to an embodiment of the present invention.
As shown in FIG. 3, first, the diamond chips are carefully placed on one of the PDMS planar substrates with smooth surfaces by using tweezers, and then the "back" shaped silicon clamp is centered on the diamond chip sample and tightly attached to the PDMS planar substrate by using tweezers, and the result is shown in FIG. 4. Then, a proper amount of ultraviolet glue is dropped on the diamond chips as shown in fig. 5. Waiting for several seconds to allow the ultraviolet glue to diffuse to the back-shaped silicon fixture, pressing another PDMS planar substrate on the diamond fragment sample, waiting for several seconds to allow the ultraviolet glue between the diamond fragment sample and the PDMS planar substrate to diffuse and fill the gap, wherein the whole structure is as shown in FIG. 6. The shaping was completed by curing under a conventional uv lamp for 8 minutes. And finally, slowly removing the PDMS planar substrates on the upper surface and the lower surface by using tweezers, taking out the fragment clamps, wherein the surfaces of the diamond fragment samples and the silicon clamps shaped like Chinese character 'hui' are in the same plane as shown in figure 7, so that the plane expansion of the fragment samples is realized, and the back surface is a thin and flat layer of cured ultraviolet glue.
Another embodiment of the present invention provides a plane-extended chip sample by using the above-described plane extension method of a chip sample.
Through this embodiment, through extension piece size, can solve the even technical problem such as inhomogeneous, the difficult operation of gluing in the current small-size piece sample course of working.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A method of planar expansion of a fragmented sample, comprising:
obtaining a first planar substrate and a second planar substrate, wherein the first planar substrate and the second planar substrate are both planar substrates with smooth surfaces and the size larger than that of the fragment sample;
placing the debris sample on the first planar substrate;
obtaining a fixture having a hollow setting for receiving the debris sample;
pressing the clamp on the first planar substrate, wherein the hollow arrangement of the clamp is sleeved on the fragment substrate;
applying a filler at the hollow location of the fixture;
pressing the second planar substrate onto the fixture;
and stripping the first planar substrate and the second planar substrate to obtain the fragment sample after planar expansion.
2. The method of claim 1, wherein the material of the first planar substrate and the second planar substrate comprises polydimethylsiloxane.
3. The method of claim 1, wherein the acquiring fixture comprises:
the clamp is obtained by means of mechanical processing, laser processing, wet etching or dry etching.
4. The method of claim 1, wherein the material of the fixture comprises silicon, glass, or metal.
5. The method of claim 1, wherein the shape and size of the fixture is selected and adapted according to the shape and size requirements of the sample for the processing equipment; the shape of the clamp comprises a square, a rectangle or a circle.
6. The method of claim 1, wherein the filler comprises an ultraviolet glue, a polymethylmethacrylate, or a thermosetting glue.
7. The method of claim 1, wherein applying a filler at the hollow setting of the fixture further comprises:
and waiting for a first preset time to enable the filler to spread on the clamp.
8. The method of claim 1, wherein pressing the second planar substrate onto the fixture further comprises:
waiting a second preset time for the filler to completely fill the gap between the fragment sample, the first planar substrate, the second planar substrate and the clamp.
9. The method of claim 1, wherein pressing the second planar substrate onto the fixture further comprises:
and waiting for a third preset time under a preset environment to solidify the filler.
10. A flat expanded fragment sample obtained by the method of any one of claims 1 to 9.
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| CN202010834812.1A CN111943132B (en) | 2020-08-18 | 2020-08-18 | Planar expansion method for chip sample and planar expanded chip sample |
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| CN202010834812.1A CN111943132B (en) | 2020-08-18 | 2020-08-18 | Planar expansion method for chip sample and planar expanded chip sample |
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| CN111943132B CN111943132B (en) | 2024-02-23 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113031392A (en) * | 2021-03-22 | 2021-06-25 | 中国科学院半导体研究所 | Method applied to photoetching process of small-size sample |
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| CN110526207A (en) * | 2019-09-16 | 2019-12-03 | 安徽科技学院 | A kind of adhering method of MEMS chip |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113031392A (en) * | 2021-03-22 | 2021-06-25 | 中国科学院半导体研究所 | Method applied to photoetching process of small-size sample |
| CN113031392B (en) * | 2021-03-22 | 2022-12-30 | 中国科学院半导体研究所 | Method applied to photoetching process of small-size sample |
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