TW201446925A - Sheet - Google Patents
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- TW201446925A TW201446925A TW103108731A TW103108731A TW201446925A TW 201446925 A TW201446925 A TW 201446925A TW 103108731 A TW103108731 A TW 103108731A TW 103108731 A TW103108731 A TW 103108731A TW 201446925 A TW201446925 A TW 201446925A
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- TW
- Taiwan
- Prior art keywords
- sheet
- adhesive
- wafer
- plate
- adhesives
- Prior art date
Links
- 230000001070 adhesive effect Effects 0.000 claims abstract description 63
- 239000000853 adhesive Substances 0.000 claims abstract description 57
- 229920005989 resin Polymers 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 4
- 230000002940 repellent Effects 0.000 claims description 4
- 239000005871 repellent Substances 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 53
- 230000001681 protective effect Effects 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 239000012790 adhesive layer Substances 0.000 description 7
- 238000001179 sorption measurement Methods 0.000 description 7
- 239000011247 coating layer Substances 0.000 description 5
- 238000003851 corona treatment Methods 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/0007—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding involving treatment or provisions in order to avoid deformation or air inclusion, e.g. to improve surface quality
- B32B37/003—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding involving treatment or provisions in order to avoid deformation or air inclusion, e.g. to improve surface quality to avoid air inclusion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Quality & Reliability (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Adhesive Tapes (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
本發明是有關於一種透過供應至頂面的接著劑使晶圓等板狀物貼著之片材。 The present invention relates to a sheet in which a sheet such as a wafer is adhered through an adhesive supplied to a top surface.
使IC、LSI等數量多的裝置形成於表面，且使各個個別的裝置沿分割預定線(切割道)被區隔劃分的半導體晶圓，於經由磨削裝置在背面進行磨削以加工成預定的厚度之後，可透過切削裝置(晶片切割(dicing)裝置)切削分割預定線而分割成一個個的裝置，被分割的裝置廣泛地被使用於手機，電腦等各種電器機器上。 A semiconductor wafer having a large number of devices such as an IC or an LSI is formed on the surface, and the semiconductor wafers divided by the respective individual devices along the division planned line (cutting lane) are ground on the back side through the grinding device to be processed into a predetermined After the thickness, the device can be divided into individual devices by cutting a predetermined dividing line by a cutting device (dicing device), and the divided device is widely used in various electric appliances such as mobile phones and computers.
磨削半導體晶圓(以下，有時亦僅簡稱為晶圓)背面的磨削裝置設有，保持晶圓之夾頭台(chuck table)和，使具有用於磨削保持於該夾頭台上的晶圓之磨削研磨石之磨削轉盤可旋轉地安裝的磨削機構，而可高精度地將晶圓磨削成所要求的厚度。 Grinding device for grinding the back surface of a semiconductor wafer (hereinafter sometimes referred to simply as a wafer) is provided with a chuck table for holding the wafer and having a grinding table for holding the chuck The grinding machine on which the grinding wheel of the grinding stone is rotatably mounted can grind the wafer to a desired thickness with high precision.
於磨削半導體晶圓之背面時，由於須以夾頭台吸附保持形成有多數個裝置之晶圓的表面側，為了保護裝置，會將在聚氯乙烯、聚烯烴等基材的其中一面配設有丙 烯酸系黏著層所構成的保護膠帶貼著於半導體晶圓的表面。 When the back surface of the semiconductor wafer is ground, the surface side of the wafer on which a plurality of devices are formed is adsorbed and held by the chuck table, and in order to protect the device, one side of the substrate such as polyvinyl chloride or polyolefin is provided. With C A protective tape composed of an olefinic adhesive layer is attached to the surface of the semiconductor wafer.
於晶圓之背面磨削，雖然可以用夾頭台之保持面吸附保持表面貼有這種保護膠帶的保護膠帶側，並磨削晶圓的背面，以將晶圓薄化成相同厚度，但是由於保護膠帶的黏著層之厚度有厚薄不均的情形，要將晶圓磨削成相同厚度並不容易。特別是當晶圓的口徑越大時，於保護膠帶的黏著層越會發生厚度不均的情形，因此很難將晶圓磨削成相同厚度。 Grinding on the back side of the wafer, although the protective tape side of the protective tape may be adhered to the holding surface of the chuck table, and the back side of the wafer may be ground to thin the wafer to the same thickness, but The thickness of the adhesive layer of the protective tape is uneven in thickness, and it is not easy to grind the wafer to the same thickness. In particular, when the diameter of the wafer is larger, the thickness of the adhesive layer on the protective tape is uneven, so that it is difficult to grind the wafer to the same thickness.
另一方面，使用線鋸等從晶柱切出的晶圓會有翹曲及波紋。這樣的晶圓可經由磨削進行平坦化加工。並有在此晶圓之磨削時，藉由在其中一面塗布樹脂，並使樹脂硬化，以將該其中一面側作為平坦面之後，再藉由保持該平坦面側，並以磨削研磨石接觸另一面進行磨削，以去除晶圓的波紋和翹曲之方法及裝置的方案被提出(參照日本專利特開2009-148866號公報)。 On the other hand, wafers cut out from the crystal column using a wire saw or the like may have warpage and corrugation. Such wafers can be planarized by grinding. In the grinding of the wafer, by coating the resin on one side and hardening the resin, the one side is used as a flat surface, and then the flat surface side is maintained, and the grinding stone is ground. A method and apparatus for removing the corrugation and warpage of the wafer by the other side is proposed (refer to Japanese Laid-Open Patent Publication No. 2009-148866).
在此公開公報上所記載的樹脂披覆裝置，以使具有接著劑作用之紫外線硬化樹脂與支撐紫外線硬化樹脂的支撐平台不固接的方式，在支撐平台上配設片材，連同片材於晶圓其中一面塗布樹脂並使其硬化，以將其中一面側作成平坦面。 In the resin coating device described in the publication, the sheet is disposed on the support platform in such a manner that the ultraviolet curable resin having the adhesive action and the support platform supporting the ultraviolet curable resin are not fixed to each other, together with the sheet One side of the wafer is coated with a resin and hardened to make one side thereof a flat surface.
如此地用壓機等將晶圓的表面側按壓至塗布於片材上之液狀樹脂以使液狀樹脂形成相同厚度後硬化之方法，取代保護膠帶，作為進行晶圓之背面磨削時用於保護 使用之晶圓表面的保護機構是有效的，特別是當晶圓的口徑越大時，其利用價值也越大。 In this way, the surface of the wafer is pressed against the liquid resin applied to the sheet by a press or the like to form the liquid resin to the same thickness and then cured, instead of the protective tape, for performing back grinding of the wafer. Protection The protection mechanism of the wafer surface used is effective, especially when the diameter of the wafer is larger, the greater the value of use.
專利文獻1：日本專利特開2009-148866號公報 Patent Document 1: Japanese Patent Laid-Open Publication No. 2009-148866
在專利文獻1所揭示的樹脂披覆方法為，在將晶圓按壓至於頂面供給接著劑之片材以進行貼著時，一旦在接著劑與晶圓間混入氣泡，因為有氣泡混入的部分局部地未受到接著劑支撐，而有會在後續的加工產生不良影響之問題。 In the resin coating method disclosed in Patent Document 1, when the wafer is pressed against the top surface of the sheet to which the adhesive is applied, the air bubbles are mixed between the adhesive and the wafer, because the air bubbles are mixed. Partially unsupported by the adhesive, there is a problem that it will have an adverse effect on subsequent processing.
具體而言，因為例如氣泡混入，致使磨削時無法吸附保持以確實固定晶圓時，在磨削加工中有時會發生晶圓從接著劑剝離等之問題。 Specifically, for example, when bubbles are mixed, the wafer cannot be adsorbed and held during grinding to secure the wafer, and problems such as peeling of the wafer from the adhesive may occur during the grinding process.
本發明是有鑒於此問題點而作成者，其目的為提供一種使氣泡難以混入接著劑與板狀物之間的片材。 The present invention has been made in view of the above problems, and an object thereof is to provide a sheet in which it is difficult to mix bubbles between an adhesive and a plate.
根據本發明所提供的片材，特徵在於，透過供給至頂面的接著劑使板狀物貼著之片材，且該片材之至少被供給接著劑之表面具有撥接著劑性以使供給至該片材之的該接著劑形成山形。 A sheet according to the present invention is characterized in that a sheet adhered to a sheet by an adhesive supplied to a top surface, and at least a surface of the sheet supplied with an adhesive has an adhesive property to supply The adhesive to the sheet forms a mountain shape.
較佳地，片材是由具有使供給至片材上的接著劑形成山形的撥接著劑性的材質所構成。較佳地，接著劑是由會因紫外線之照射而硬化的紫外線硬化樹脂所構成，且片材可讓紫外線透過。 Preferably, the sheet is composed of a material having a repellent property in which an adhesive applied to the sheet is formed into a mountain shape. Preferably, the adhesive is composed of an ultraviolet curable resin which is hardened by irradiation of ultraviolet rays, and the sheet allows ultraviolet rays to pass therethrough.
本發明的片材為，片材之至少被供給接著劑之表面具有撥接著劑性，以使所供給之接著劑形成山形。因此，由於讓供給至片材上的接著劑形成山形，使板狀物相對於接著劑接近移動時，板狀物大致以點接觸與接著劑接觸之後，可以用板狀物推壓擴展接著劑而使板狀物貼著於片材上。據此，可以防止空氣進入接著劑與板狀物之間，因而使氣泡難以混入接著劑與板狀物之間。 In the sheet of the present invention, at least the surface of the sheet to which the adhesive is supplied has a repellent property so that the supplied adhesive forms a mountain shape. Therefore, since the adhesive supplied to the sheet is formed into a mountain shape and the plate is moved close to the adhesive, the plate can be pressed with the adhesive after the contact of the plate is substantially in point contact with the adhesive. The plate is attached to the sheet. According to this, it is possible to prevent air from entering between the adhesive and the plate, thereby making it difficult for air bubbles to be mixed between the adhesive and the plate.
10、12‧‧‧片材 10,12‧‧‧Sheet
11‧‧‧半導體晶圓 11‧‧‧Semiconductor wafer
11a‧‧‧表面 11a‧‧‧ surface
11b‧‧‧背面 11b‧‧‧Back
12a‧‧‧被貼著面 12a‧‧‧ was affixed
13‧‧‧分割預定線 13‧‧‧Division line
14‧‧‧氟化樹脂塗布層 14‧‧‧Fluorinated resin coating layer
15‧‧‧裝置 15‧‧‧ device
16‧‧‧支撐台 16‧‧‧Support table
16a‧‧‧支撐面 16a‧‧‧Support surface
18‧‧‧接著劑 18‧‧‧Adhesive
18a‧‧‧接著劑層 18a‧‧‧Binder layer
20‧‧‧壓製裝置 20‧‧‧Compression device
22‧‧‧保持平台 22‧‧‧Maintaining the platform
24‧‧‧吸附保持部 24‧‧‧Adsorption and retention department
26‧‧‧電磁切換閥 26‧‧‧Electromagnetic switching valve
28‧‧‧吸附源 28‧‧‧Adsorption source
30‧‧‧紫外線燈 30‧‧‧UV light
32‧‧‧保護片 32‧‧‧Protection film
A、B‧‧‧箭頭 A, B‧‧ arrows
圖1(A)為本發明第1實施形態之片材的截面圖，圖1(B)為第2實施形態之片材的截面圖；圖2表示接著劑供給步驟的側視圖；圖3為半導體晶圓的表面側立體圖；圖4(A)、(B)表示按壓步驟的局部截面側視圖；及圖5表示接著劑硬化步驟的局部截面側視圖。 Fig. 1 (A) is a cross-sectional view of a sheet according to a first embodiment of the present invention, Fig. 1 (B) is a cross-sectional view of a sheet of the second embodiment, and Fig. 2 is a side view showing a step of supplying an adhesive; A side cross-sectional view of the semiconductor wafer; FIGS. 4(A) and 4(B) are partial cross-sectional side views showing a pressing step; and FIG. 5 is a partial cross-sectional side view showing an adhesive hardening step.
以下，將參照圖式對本發明的實施形態進行詳細的說明。參照圖1(A)，顯示本發明第1實施型態之片材10的 截面圖。片材10是由具有撥接著劑性的材質所形成，可為例如聚苯乙烯片材。在此所謂的「撥接著劑性」，其定義是指可彈開接著劑程度之潤濕性低的性質。較佳地，片材10相對紫外線是透明的。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Referring to Fig. 1(A), a sheet 10 of a first embodiment of the present invention is shown. Sectional view. The sheet 10 is formed of a material having a release property, and may be, for example, a polystyrene sheet. The term "repellency" as used herein refers to a property which is low in wettability to the extent that the adhesive can be bounced off. Preferably, sheet 10 is transparent to ultraviolet light.
參照圖1(B)，顯示本發明第2實施形態之片材12的截面圖。片材12是由例如，與保護膠帶之基材相同的聚氯乙烯、聚烯烴等樹脂所形成。 Referring to Fig. 1(B), a cross-sectional view of a sheet 12 according to a second embodiment of the present invention is shown. The sheet 12 is formed of, for example, a resin such as polyvinyl chloride or polyolefin which is the same as the base material of the protective tape.
片材12的表面(被貼著面)12a上，可施加例如，Teflon(鐵氟龍)(登錄商標)塗布層等的氟樹塗布層14。透過這種氟樹脂塗布層14，可以對片材12的被貼著面12a賦予撥接著劑性。 For example, a fluorine-coated layer 14 such as a Teflon (registered trademark) coating layer can be applied to the surface (adhered surface) 12a of the sheet 12. The fluororesin coating layer 14 can impart an adhesive property to the adhering surface 12a of the sheet 12.
也可以在片材12的被貼著面12a施以電暈放電處理，以作為替代的實施形態。即使透過電暈放電處理，也可以賦予片材12的被貼著面12a撥接著劑性。較佳地，片材12相對紫外線也是透明的。 Alternatively, a corona discharge treatment may be applied to the adhering surface 12a of the sheet 12 as an alternative embodiment. Even if it is subjected to corona discharge treatment, it is possible to impart an adhesive property to the adhering surface 12a of the sheet 12. Preferably, sheet 12 is also transparent to ultraviolet light.
在此，並不需要對片材12的被貼著面12a的整面施加氟化樹脂塗布層14或電暈放電處理，進行為對片材12之至少被供給接著劑之表面施加賦予撥接著劑性的氟樹脂塗布層或電暈放電處理亦可。 Here, it is not necessary to apply the fluorinated resin coating layer 14 or the corona discharge treatment to the entire surface of the sheet 12 to be adhered to the surface 12a, and to apply an application to the surface of the sheet 12 to which at least the adhesive is supplied. A fluororesin coating layer or a corona discharge treatment may also be used.
參照圖2，為表示接著劑供給步驟的側視圖。首先，在由玻璃等所形成的支撐台16的支撐面16a上載置具有撥接著劑性的片材10，並在片材10上滴下液狀的接著劑18時，由於使片材10具有可撥動接著劑程度之濕潤性低的性質(撥接著劑性)，故接著劑18可***成山形或半球形。在 此，較佳的是，由紫外線硬化樹脂構成接著劑18，更佳則是，由紫外線硬化環氧樹脂構成。 Referring to Fig. 2, there is shown a side view showing an adhesive supply step. First, when the sheet 10 having the repellent property is placed on the support surface 16a of the support table 16 formed of glass or the like, and the liquid adhesive 18 is dropped on the sheet 10, the sheet 10 is made available. The property of the degree of wettability of the adhesive is low (the adhesive property), so that the adhesive 18 can be bulged into a mountain shape or a hemispherical shape. in Therefore, it is preferable that the adhesive 18 is composed of an ultraviolet curable resin, and more preferably, it is composed of an ultraviolet curable epoxy resin.
參照圖3，表示貼著本發明片材10之為板狀物的一種的半導體晶圓(以下，有時亦僅簡稱為晶圓)11表面側立體圖。在半導體晶圓11的表面11a使複數條分割預定線(切割道)13形成為格子狀，同時在分割預定線13所區隔劃分的各區域中形成IC、LSI等裝置15。半導體晶元11是由例如矽晶圓所構成，其厚度為約700μm左右。11b為晶圓11之背面。 Referring to Fig. 3, a perspective view of a surface of a semiconductor wafer (hereinafter, simply referred to as a wafer) 11 in which a sheet 10 of the present invention is applied as a plate member is shown. On the surface 11a of the semiconductor wafer 11, a plurality of predetermined dividing lines (cutting streets) 13 are formed in a lattice shape, and devices 15 such as ICs and LSIs are formed in the respective regions divided by the dividing planned lines 13. The semiconductor wafer 11 is made of, for example, a germanium wafer and has a thickness of about 700 μm. 11b is the back side of the wafer 11.
接著，參照圖4及圖5，針對於晶圓11之表面11a貼著由硬化的接著劑層18a與片材10所形成的保護片32的方法作說明。參照圖4(A)，壓製裝置20設有具有由多孔陶瓷等所形成的吸附保持部24的保持平台22，而吸附保持部24透過電磁切換閥26選擇性地連接至吸附源28。 Next, a method of adhering the protective sheet 32 formed of the cured adhesive layer 18a and the sheet 10 to the surface 11a of the wafer 11 will be described with reference to FIGS. 4 and 5. Referring to Fig. 4(A), the pressing device 20 is provided with a holding stage 22 having an adsorption holding portion 24 formed of porous ceramics or the like, and the adsorption holding portion 24 is selectively connected to the adsorption source 28 through the electromagnetic switching valve 26.
如圖4(A)所示，以壓製裝置20的保持平台22吸附保持晶圓11的背面11b側，使保持平台22往箭頭A方向降下，如圖4(B)所示，可使晶圓11的表面11a與半球狀的接著劑18形成點接觸。 As shown in FIG. 4(A), the holding platform 22 of the pressing device 20 adsorbs and holds the back surface 11b side of the wafer 11, and the holding platform 22 is lowered in the direction of the arrow A. As shown in FIG. 4(B), the wafer can be made. The surface 11a of the 11 is in point contact with the hemispherical adhesive 18.
在此狀態下，再緩緩調降保持平台22以相對於片材10按壓接著劑18時，接著劑18會朝箭頭B方向同等地延展，使片材10藉著同等地延展的接著劑18貼著在晶圓11的表面11a。 In this state, when the holding platform 22 is gradually lowered to press the adhesive 18 with respect to the sheet 10, the adhesive 18 is equally extended in the direction of the arrow B, so that the sheet 10 is stretched by the adhesive 18 which is equally stretched. Adhered to the surface 11a of the wafer 11.
在此狀態下，如圖5所示，以配置在玻璃等透明材料所形成的支撐台16下方的紫外線燈30照射，可通過支撐台16以及具有紫外線穿透性質的片材10，對同等地延展 的接著劑18照射紫外線，而使接著劑18硬化並形成具有接著性的接著劑層18a。調升壓製裝置20的保持平台22，可在晶圓11的表面11a貼著由片材10與接著劑層18a所形成的保護片32。 In this state, as shown in FIG. 5, the ultraviolet lamp 30 disposed under the support table 16 formed of a transparent material such as glass is irradiated, and the support table 16 and the sheet 10 having ultraviolet penetrating properties can be equally Extension The adhesive 18 is irradiated with ultraviolet rays to harden the adhesive 18 and form an adhesive layer 18a having an adhesiveness. The holding stage 22 of the boosting device 20 can be attached to the protective sheet 32 formed of the sheet 10 and the adhesive layer 18a on the surface 11a of the wafer 11.
本發明之使用片材10、12的保護片貼著步驟，由於供給至片材10上的接著劑是形成山形或半球形，在使晶圓11相對於接著劑18接近移動的情況下，使晶圓11大致以點接觸與接著劑18接觸之後，可以利用晶圓11使接著劑18被同等地推壓擴展而使晶圓11貼著於片材10上。 In the protective sheet adhering step of the sheets 10 and 12 of the present invention, since the adhesive supplied to the sheet 10 is formed into a mountain shape or a hemispherical shape, in the case where the wafer 11 is moved close to the adhesive 18, After the wafer 11 is in contact with the adhesive 18 in a point contact, the wafer 11 can be pressed and expanded by the wafer 11 to adhere the wafer 11 to the sheet 10.
亦即，可在晶圓11的表面11a貼著由片材10及硬化的接著劑層18a所形成的保護片32。因此，可以防止接著劑18與晶圓11之間滲入空氣，而得以抑制氣泡混入接著劑18與晶圓11之間。 That is, the protective sheet 32 formed of the sheet 10 and the cured adhesive layer 18a may be adhered to the surface 11a of the wafer 11. Therefore, it is possible to prevent air from infiltrating between the adhesive 18 and the wafer 11, and it is possible to suppress the air bubbles from being mixed between the adhesive 18 and the wafer 11.
上述的實施形態是針對藉由接著劑18以將本發明之片材10、12貼著於晶圓11的表面11a之例作說明，但是，被加工物並不只限於晶圓，也包含一般的板狀被加工物(板狀物)。 The above embodiment is an example in which the sheets 10 and 12 of the present invention are attached to the surface 11a of the wafer 11 by the adhesive 18, but the workpiece is not limited to the wafer, and includes general Plate-like workpiece (plate).
10‧‧‧片材 10‧‧‧Sheet
11‧‧‧半導體晶圓 11‧‧‧Semiconductor wafer
11a‧‧‧表面 11a‧‧‧ surface
11b‧‧‧背面 11b‧‧‧Back
15‧‧‧裝置 15‧‧‧ device
16‧‧‧支撐台 16‧‧‧Support table
16a‧‧‧支撐面 16a‧‧‧Support surface
18‧‧‧接著劑 18‧‧‧Adhesive
20‧‧‧壓製裝置 20‧‧‧Compression device
22‧‧‧保持平台 22‧‧‧Maintaining the platform
24‧‧‧吸附保持部 24‧‧‧Adsorption and retention department
26‧‧‧電磁切換閥 26‧‧‧Electromagnetic switching valve
28‧‧‧吸附源 28‧‧‧Adsorption source
A、B‧‧‧箭頭 A, B‧‧ arrows
Claims (3)
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| JP2013087144A JP6288935B2 (en) | 2013-04-18 | 2013-04-18 | Sheet |
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| TW201446925A true TW201446925A (en) | 2014-12-16 |
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| JP (1) | JP6288935B2 (en) |
| KR (1) | KR102116585B1 (en) |
| CN (1) | CN104108063B (en) |
| TW (1) | TW201446925A (en) |
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| JP2017224670A (en) * | 2016-06-14 | 2017-12-21 | 株式会社ディスコ | Protective-member forming apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP1164154A1 (en) * | 2000-06-15 | 2001-12-19 | Ag Bayer | Pressure-sensitive adhesives with improved shearing resistance at higher temperatures |
| JP2002203827A (en) * | 2000-12-28 | 2002-07-19 | Lintec Corp | Method for grinding back side of semiconductor wafer |
| JP2005206664A (en) * | 2004-01-21 | 2005-08-04 | Nitto Denko Corp | Semiconductor sealing resin composition |
| JP2006066625A (en) * | 2004-08-26 | 2006-03-09 | Nec Corp | Bare chip mounting apparatus, bare chip mounting method, and sheet |
| JP4954663B2 (en) * | 2005-10-17 | 2012-06-20 | 東京エレクトロン株式会社 | Bonding device |
| JP2008194886A (en) * | 2007-02-09 | 2008-08-28 | Nippon Shokubai Co Ltd | Surface protective film |
| JP5089370B2 (en) | 2007-12-21 | 2012-12-05 | 株式会社ディスコ | Resin coating method and apparatus |
| JP2010062269A (en) * | 2008-09-02 | 2010-03-18 | Three M Innovative Properties Co | Method and apparatus for manufacturing wafer laminate, wafer laminate manufacturing method, method for exfoliating support layer, and method for manufacturing wafer |
| JP5324212B2 (en) * | 2008-12-26 | 2013-10-23 | 株式会社ディスコ | Resin coating method and resin coating apparatus |
| JP5503951B2 (en) * | 2009-12-07 | 2014-05-28 | 株式会社ディスコ | Sticking device |
| EP2416633A1 (en) * | 2010-08-04 | 2012-02-08 | AT & S Austria Technologie & Systemtechnik Aktiengesellschaft | Method for fixing and/or embedding an electronic component and adhesive for use in such a method |
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2013
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| Publication number | Publication date |
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| KR102116585B1 (en) | 2020-05-28 |
| KR20140125295A (en) | 2014-10-28 |
| JP6288935B2 (en) | 2018-03-07 |
| CN104108063A (en) | 2014-10-22 |
| CN104108063B (en) | 2019-01-01 |
| JP2014212187A (en) | 2014-11-13 |
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