CN111863694A - Transfer device and transfer method - Google Patents
Transfer device and transfer method Download PDFInfo
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- CN111863694A CN111863694A CN202010691445.4A CN202010691445A CN111863694A CN 111863694 A CN111863694 A CN 111863694A CN 202010691445 A CN202010691445 A CN 202010691445A CN 111863694 A CN111863694 A CN 111863694A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Abstract
The invention discloses a transfer device and a transfer method, wherein the transfer device comprises a substrate and at least one transfer head arranged on the substrate, and the transfer head comprises: the adsorption device comprises an adsorption device and a magnetic field generation device, wherein the magnetic field generation device is used for generating a magnetic field to adsorb magnetic particles to form a contact layer in the adsorption region, and the adsorption device adsorbs the Micro LED on the surface of the contact layer; the transfer device and the transfer method can ensure that the Micro LED can be fully contacted by magnetic particles, and further can solve the problem that the distance between the transfer head and the absorbed target seriously influences the magnitude of the adsorption force in the traditional electrostatic transfer head.
Description
Technical Field
The invention relates to the technical field of display, in particular to a transfer device and a transfer method.
Background
In the manufacturing process of the Micro light-emitting diode display, transferring the Micro LED from the middle bearing plate to the TFT substrate to carry out bonding between the Micro LED and the TFT substrate is a very critical step. In addition, for Micro LEDs with abnormal lighting after Bonding on the TFT substrate, the abnormal Micro LEDs need to be removed at fixed points.
Therefore, there is a need for an efficient Micro LED transfer tool that accomplishes the transfer reliably, accurately, quickly, and inexpensively. However, the existing Micro LED transfer heads have no way to transfer the Micro LEDs reliably, timely, quickly and cheaply due to their respective defects.
For example, in a conventional electrostatic transfer head, the distance between the electrostatic transfer head and the target to be sucked seriously affects the magnitude of the suction force. Fig. 1 is a schematic structural diagram of a conventional electrostatic transfer head, and as shown in fig. 1, when a Micro LED200 is sucked by using the electrostatic transfer head 200 in fig. 1, an electrostatic force of the electrostatic transfer head 200 to the Micro LED200 is inversely proportional to a square of a distance therebetween.
Therefore, it is desirable to provide a transferring apparatus and a transferring method with high reliability and precision and low cost to solve the above problems.
Disclosure of Invention
In order to solve the technical problems, the invention provides a transfer device and a transfer method, wherein a transfer head of the transfer device enables all micro LEDs to be fully contacted by magnetic particles through the matching of an electric field unit, a magnetic field generating device and the magnetic particles, and further the problem that the distance between a suction head and a sucked target seriously influences the magnitude of adsorption force in the traditional electrostatic transfer head can be solved.
In order to achieve the above purpose, the transfer device and the transfer method of the present invention adopt the following technical solutions.
The invention provides a transfer device, which comprises a substrate and at least one transfer head arranged on the substrate, wherein the transfer head comprises: a chucking device and a magnetic field generating device, wherein: the adsorption device is arranged on one surface of the substrate and comprises an adsorption area on the surface which is far away from the substrate, and the adsorption device is at least used for: adsorbing Micro LEDs within a preset distance range to the adsorption area, or releasing the Micro LEDs; the magnetic field generating device is disposed between the chucking device and the substrate and configured to generate a magnetic field at least for: adsorbing magnetic particles within a preset distance range on the adsorption zone to form a contact layer with a preset structure, so that the contact layer is in contact with the Micro LED adsorbed on the adsorption zone, or releasing the magnetic particles from the contact layer.
Further, the magnetic field generating device comprises at least one electromagnetic circuit layer, wherein the electromagnetic circuit layer comprises a first dielectric layer and at least one electromagnetic coil coated on the first dielectric layer; the electromagnetic coil is configured to receive an independent electromagnetic signal and generate a magnetic field in accordance with the electromagnetic signal; the first dielectric layer is arranged to cover or semi-cover the electromagnetic coil.
Furthermore, the electromagnetic circuit layers in two adjacent transferred magnetic field generating devices are respectively in the same layer and are respectively continuous through the first dielectric layer to form a magnetic field generating device layer.
Further, the first dielectric layer is SiNx、SiOxOr SiONxAt least one of (1).
Further, the transfer device includes a plurality of transfer heads arranged in an array on the substrate; the transfer device also comprises a plurality of blocking dams, and the blocking dams are arranged between the adjacent transfer heads and at least used for defining the adsorption areas of the transfer heads.
In a preferred embodiment, each electromagnetic circuit layer in two adjacent transferred magnetic field generating devices is respectively in the same layer and is respectively continuous through the first dielectric layer to form a magnetic field generating device layer; the blocking dam is arranged on the surface of the magnetic field generation device layer, which is deviated from the substrate, and is positioned between the adjacent adsorption devices, and the blocking dam is at least used for separating the adsorption regions of the adjacent adsorption units.
Further, the adsorption device comprises at least one electrostatic circuit layer, and the electrostatic circuit layer comprises: the electrostatic electrode is arranged on one side of the magnetic field generating device, which is far away from the substrate; the second dielectric layer is arranged on one side of the electrostatic electrode, which is far away from the substrate, and covers the electrostatic electrode; wherein each electrostatic electrode is configured to receive an independent electrostatic signal and generate an electrostatic force acting on the Micro LED according to the electric signal.
Further, the electrostatic circuit layer comprises two electrostatic electrodes which are arranged at the same layer and at intervals, and the electrostatic electrodes are respectively configured with electrostatic signals with different polarities.
Further, the material of the second dielectric layer is SiNx、SiOxOr SiONxAt least one of (1).
Further, the magnetic particles are nano-magnetic particles, the nano-magnetic particles comprise a magnetic core and an insulating shell, wherein: the magnetic core is made of Fe2O3、Fe3O4At least one of Co or Ni; the insulating shell is made of SiNxSiOx or SiONxAt least one of (1).
Further, the size range of the magnetic particles is 5nm-10 um.
Further, the thickness range of the contact layer is 100nm-50 um.
The invention provides a transfer method based on any one transfer device, which is characterized by comprising the following steps: s1, starting the magnetic field generating device, enabling the transfer head to be close to the first bearing substrate loaded with the magnetic particles, enabling the transfer head to adsorb the magnetic particles, and forming a contact layer with a preset structure on the adsorption region; s2, enabling the transfer head to be close to a second bearing substrate loaded with Micro LEDs, and starting an electric field unit to enable the Micro LEDs to be adsorbed on the contact layer; s3, aligning the transfer head absorbed with the Micro LED to a preset position on a third substrate, and adjusting the electric field unit to release the Micro LED at the preset position; and S4, adjusting the magnetic field generating device to reset the magnetic particles and enter the next transfer operation.
The transfer device and the transfer method have the following beneficial effects:
according to the transfer device, the magnetic field generating device is additionally arranged, and the magnetic particles can be adsorbed on the adsorption area of the transfer head to form the contact layer, so that the Micro LEDs can be fully contacted by the magnetic particles, and the problem that the distance between the transfer head and an adsorbed target seriously influences the size of adsorption force in the traditional electrostatic transfer head can be solved; by additionally arranging the electric field unit, the magnetic field generating device and the magnetic particles, the adsorption electric field and the magnetic particles can be used for cooperatively adsorbing the Micro LED, so that the Micro LED can be efficiently adsorbed from the bearing substrate at a fixed point; by controlling the electromagnetic signal provided for the magnetic field generating device, the number and the shape of the magnetic particles can be adjusted to reset, the topographic shape after the thickness of the contact layer can be adjusted, and finally the Micro LED can be ensured to be in full contact with the magnetic particles.
Drawings
The technical solution and other advantages of the present invention will become apparent from the following detailed description of specific embodiments of the present invention, which is to be read in connection with the accompanying drawings.
Fig. 1 is a schematic structural diagram of a conventional electrostatic transfer head.
Fig. 2 is a schematic view of a first embodiment of the transfer device of the present invention.
Fig. 3 is a schematic view of a second embodiment of the transfer device of the present invention.
Fig. 4A-4D are schematic views illustrating the operation process of an embodiment of the transferring device according to the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.
Fig. 2 is a schematic view of a first embodiment of the transfer device of the present invention, and fig. 3 is a schematic view of a second embodiment of the transfer device of the present invention. As shown in fig. 2 and 3, the present invention provides a transfer device, including: the transfer device comprises a substrate 100, at least one transfer head 200 arranged on the substrate 100 and barrier dams 300 positioned between the adjacent transfer heads 200.
As shown in fig. 2, the transfer head 200 includes: a magnetic field generating device 210 and a suction device 220. Wherein: the suction device 220 is disposed on a surface of the substrate 100 and includes a suction region 222 on a surface facing away from the substrate 100, the suction device 220 is configured to: adsorbing the Micro LEDs 400 within a preset distance range to the adsorption area 222, or releasing the Micro LEDs 400; the magnetic field generating device 210 is disposed between the adsorption device 220 and the substrate 100 and configured to generate a magnetic field at least for: adsorbing the magnetic particles 501 within a predetermined distance range on the adsorption region 222 to form a contact layer 500 having a predetermined structure, so that the contact layer 500 is in contact with the Micro LED400 adsorbed on the adsorption region 222, or releasing the magnetic particles 501 from the contact layer 500.
Specifically, the magnetic field generating device 210 can also make the magnetic particles 501 attract the Micro LED400 through the magnetic field.
Obviously, in the transfer head 200 of the present invention, the magnetic field generating device 210 is additionally arranged to adsorb the magnetic particles 501 on the adsorption region 222 to form the contact layer 500, so that the contact layer 500 can be fully contacted with the Micro LEDs 400 in different terrains, the problem that the distance between the transfer head and the adsorbed target seriously affects the magnitude of the electrostatic adsorption force in the conventional electrostatic transfer head can be further overcome, and the purpose of efficiently and fixedly adsorbing the Micro LEDs 400 from the carrier substrate can be finally achieved.
As shown in fig. 2, the substrate 100 is used to carry the adsorption device 220 or/and the magnetic field generating device 210. For example, in the present embodiment, the magnetic field generating device 210 and the suction device 220 are sequentially stacked on one surface of the substrate 100.
In particular implementations, the substrate 100 may be formed of various materials such as silicon, ceramics, and polymers.
As shown in fig. 2, the magnetic field generating device 210 is disposed on the substrate 100, and the magnetic field generating device 210 is configured to generate an attractive force to the magnetic particles 501 within a predetermined distance range to control the magnetic particles 501 to cover the attraction area 222.
As shown in fig. 2, the magnetic field generating device 210 includes at least one electromagnetic circuit layer 211, the electromagnetic circuit layer 211 includes a first dielectric layer 2111 and at least one electromagnetic coil 2112 disposed in the first dielectric layer 2111, and each electromagnetic coil 2112 is configured to receive an independent electromagnetic signal and generate a magnetic field acting on the magnetic particles 501 according to the electromagnetic signal.
By configuring each electromagnetic coil 2112 with an independent electromagnetic signal, separate control of each electromagnetic coil 2112 and the magnetic field generating device 210 can be achieved, and thus can be used to perform the transfer of a single Micro LED400 or the transfer of multiple Micro LEDs 400.
In a preferred embodiment, the electromagnetic circuit layers 211 in adjacent magnetic field generating devices 210 are respectively in the same layer and are respectively connected through the first dielectric layer 2111 to form a magnetic field generating device layer. For example, as will be understood by those skilled in the art, the magnetic field generating device layer can be formed by fabricating each of the first dielectric layers 2111 of the plurality of transfer heads 200 in a single layer, and distributing the electromagnetic coils 2112 in regions of each of the first dielectric layers 2111 corresponding to the transfer heads 200.
For example, as shown in fig. 2, in the present embodiment, the magnetic field generation devices 210 of the plurality of transfer heads 200 each include three electromagnetic wiring layers 211 sequentially laminated on the substrate 100, and the electromagnetic wiring layers 211 of the corresponding layers of the transfer heads 200 are respectively layered and continuous with each other.
It should be noted that fig. 2 is only a schematic structure of the magnetic field generating device 210 according to the present invention. The number of stacked layers or stacked structure of the electromagnetic circuit 211, the thickness, material or structure of the first dielectric layer 2111, or the material, structure or layout of the electromagnetic coil 2112 in the magnetic field generating device 210 are not limited in the present invention, as long as the specific configuration of the electromagnetic circuit 211, the first dielectric layer 2111 or the electromagnetic coil 2112 in the magnetic field generating device 210 is appropriate, and can be used for the adsorption or release of the magnetic particles 501 and the formation of the contact layer 500. For example, in one transfer apparatus, the number of layers 211 of electromagnetic lines, the thickness of the first dielectric layer 2111, or the arrangement of the electromagnetic coils 2112 in different transfer heads 200 may be different.
Specifically, the first dielectric layer 2111 is SiNx、SiOxOr SiONxAt least one of (1). For example, in the present embodiment, SiON is selected as the first dielectric layer 2111 x。
Specifically, the electromagnetic coil 2112 is a metal coil made of copper, aluminum, or the like. In specific implementation, the electromagnetic coil 2112 is a coil with a spiral structure.
It should be noted that fig. 2 only schematically shows the layout structure, material, or shape of the electromagnetic coil 2112. In practical implementation, the layout structure, material or shape of the electromagnetic coil 2112 can be flexibly set according to actual conditions.
In particular, the electromagnetic signal is a current signal. By applying a current signal to the electromagnetic coil 2112, the electromagnetic coil 2112 generates a magnetic field acting on the magnetic particles 501.
In practical implementation, the current signal supplied to the electromagnetic coil 2112 is controlled, so that the strength or direction of the magnetic field generated by the electromagnetic coil 2112 can be adjusted, and the number of the magnetic particles 501 attached, the stacked shape, or the reset can be adjusted. That is, by controlling the current signal supplied to the electromagnetic coil 2112, the structure of the contact layer 500 formed by the magnetic particles 501 attached thereto can be controlled.
As shown in fig. 2, the magnetic particles 501 within the predetermined distance range can be adsorbed on the adsorption region 222 under the action of the magnetic field generated by the magnetic field generating device 210 to form a contact layer 500 with a predetermined structure. Specifically, when the magnetic particles 501 are disposed toward the attraction region 222 of the transfer head 200 and are within the range of action of the magnetic field generated by the magnetic field generation device 210, the magnetic particles 501 can be held on the attraction region 222 by the attraction of the magnetic field, thereby forming the contact layer 500 covering the attraction region 222.
By adopting the contact layer 500 formed by stacking the magnetic particles 501, the shape and the thickness of the contact layer 500 can be adjusted through a magnetic field, so that the Micro LED400 can be fully contacted with the adsorption head 100, and the strong adsorption effect of the adsorption device 220 on the Micro LED400 can be ensured.
As shown in fig. 2, the contact layer 500 covers a side of the adsorption region 222 facing away from the substrate 100 for contacting the Micro LEDs 400 adsorbed to the adsorption region 222. Also, the contact layer 500 is composed of the magnetic particles 501 attracted and held on the attraction region 222 by the magnetic field generation device 210.
As mentioned above, in a specific implementation, the electromagnetic signal accessed by the magnetic field generating device 210 can be controlled to control the stacking number or the stacking shape of the magnetic particles 501 in the adsorption region 222, so as to control the topographic structure or the thickness variation of the contact layer 500.
Specifically, the contact layer 500 has a thickness ranging from 100nm to 50 um. The thickness of the contact layer 500 is controlled within the above range to ensure a close fitting effect and a strong adsorption force of the transfer head 200 to the Micro LED 400.
Specifically, the magnetic particles 501 are nano-magnetic particles, and the nano-magnetic particles include a magnetic core and an insulating shell. Wherein the magnetic core is made of Fe2O3,Fe3O4Co, or Ni. The insulating shell is made of SiOx. In other embodiments, the material forming the magnetic core may also be nickel oxide or cobalt oxideAnd (4) melting the mixture. The material of the insulating shell is silicon nitride or a compound of silicon oxide and silicon nitride.
Specifically, the magnetic particles 501 range in size from 5nm to 10 um. By controlling the size of the magnetic particles 501 within a certain range, the topographic structure or thickness variation of the contact layer 500 can be more precisely controlled, and thus, the transfer head 200 and each uneven Micro LED400 can be fully contacted.
As shown in fig. 2, the adsorption device 220 is disposed on a surface of the magnetic field generating device 210 facing away from the substrate 100, and the surface of the adsorption device 220 facing away from the substrate 100 has an adsorption region 222, and the adsorption device 220 is configured to adsorb Micro LEDs 400 in a predetermined distance range to the adsorption region 222 or release the Micro LEDs 400. It should be noted that the preset distance range is not specifically limited by the present invention, as long as the transfer head 200 can adsorb the Micro LED400 to the adsorption region 222 thereof.
As shown in fig. 2, the adsorption device 220 includes: at least one electrostatic circuit layer 221, said electrostatic circuit layer 221 comprising one or more electrostatic electrodes 2212 and a second dielectric layer 2211. Wherein a second dielectric layer 2211 is arranged on a side of the electrostatic electrode 2212 facing away from the substrate 100 and covering the electrostatic electrode 2212, wherein the electrostatic electrode 2212 is configured to receive an independent electrostatic signal and to generate an electrostatic force acting on the Micro LED400 according to the electrostatic signal.
By configuring each electrostatic electrode 2212 with an independent electrostatic signal, each electrostatic electrode 2212 and each adsorption device 220 can be independently controlled, so that the method can be used for executing single Micro LED400 transfer or multiple Micro LED400 transfers.
Specifically, the electrostatic circuit layer 221 includes two electrostatic electrodes 2212 disposed at an interval in the same layer, and the two electrostatic electrodes 2212 are respectively configured with electrostatic signals of different polarities. For example, as shown in fig. 2, in the present embodiment, the electrostatic circuit layers 221 of different transfer heads 200 are respectively configured to include one or two electrostatic electrodes 2212.
Specifically, the material of the electrostatic electrode 2212 is copper or aluminum. In other embodiments, the material of the electrostatic electrode 2212 may also be nickel or silver.
Specifically, the electrostatic electrode 2212 may have a single-layer structure or a stacked-layer structure, which is not limited in this embodiment. Fig. 2 illustrates an example in which the electrostatic electrode has a single-layer structure.
Specifically, the second dielectric layer 2111 is SiNx、SiOxOr SiONxAt least one of (1). For example, in the present embodiment, SiON is selected as the second dielectric layer 2111x。
So far, in the process of transferring the Micro LED400 by using a transfer head 200: before the Micro LED400 is attracted to the attraction area 222, the transfer head 200 can attract and control the magnetic particles 501 to form the contact layer 500 with a preset structure in the attraction area 222 by controlling the electromagnetic signal of the magnetic field generating device 210 therein, so that the subsequently attracted Micro LED400 can be ensured to be in sufficient contact with the contact layer 500. Based on the above process, the transfer head 200 can generate a strong adsorption effect on the Micro LED400 through the adsorption effect of the adsorption device 220 or/and the magnetic particles 501 in the contact layer 500, so that the Micro LED400 can be efficiently attracted from the carrier substrate at a fixed point.
As shown in fig. 2, a plurality of barrier dams 300 are further disposed on the substrate 100, and the barrier dams 300 are located between adjacent transfer heads 200 and at least define the suction regions 222 of the transfer heads 200.
For example, as shown in fig. 2, in the present embodiment, the electromagnetic circuit layers 211 in the magnetic field generating devices 210 of two adjacent transfer heads 200 are respectively in the same layer and are respectively continuous through the first dielectric layer 2111 to form a magnetic field generating device layer, and the blocking dam 300 is disposed on a side of the magnetic field generating device layer away from the substrate 100 and between the adjacent adsorption devices 220 to separate the adsorption regions 222 of the adjacent adsorption devices 220.
It should be noted that, in order to be able to pick up a plurality of light emitting diodes at the same time, the above-mentioned transfer device includes a plurality of transfer heads 200, in each drawing in the embodiment of the present invention, in order to illustrate the structure of the transfer device more clearly, only one or two transfer heads 200 in the transfer device are taken as an example for illustration, and in the specific implementation, the number and distribution of the transfer heads 200 may be set according to actual needs, and the present invention is not limited herein.
Fig. 3 is a schematic view of a second embodiment of the transfer device of the present invention. The main difference of the transfer apparatus shown in fig. 3 compared with the transfer apparatus shown in fig. 2 is that in the adsorption device 220 of the transfer head 200, each electrostatic circuit layer 221 includes only one electrostatic electrode 2212.
Fig. 4A-4D are schematic views illustrating the operation of the transfer device according to the present invention. As shown in fig. 4A to 4D, the present invention further provides a transferring method based on the transferring apparatus of the present invention, the transferring method comprising the steps of:
s0, providing a transfer device of the invention;
s1, starting the magnetic field generating device, enabling the transfer head to be close to the first bearing substrate loaded with the magnetic particles, enabling the transfer head to adsorb the magnetic particles, and forming a contact layer with a preset structure on the adsorption region;
s2, enabling the transfer head to be close to a second bearing substrate loaded with Micro LEDs, and starting an electric field unit to enable the Micro LEDs to be adsorbed on the contact layer;
s3, aligning the transfer head absorbed with the Micro LED to a preset position on a third substrate, and adjusting the electric field unit to release the Micro LED at the preset position; and the number of the first and second groups,
and S4, adjusting the magnetic field generating device to reset the magnetic particles and enter the next transfer operation.
In step SO, the transfer device according to the invention is first provided. For example, as shown in fig. 4A to 4D, in the present embodiment, the transfer device shown in fig. 3 described above is employed. In other embodiments, the transfer device shown in fig. 2 may be employed.
It should be noted that fig. 2 and 3 are only schematic structural views of the transfer device according to the present invention. The transfer method of the present invention is not limited to the transfer apparatus shown in fig. 2 and 3.
As shown in fig. 4A, in step S1, the magnetic field generating device 210 of the transfer head 200 in the transfer apparatus is controlled to be turned on, and the side of the adsorption region 220 of the transfer head 200 facing the carrier substrate 110 and carrying the magnetic particles 501 is approached within a predetermined distance, so that the magnetic particles 501 are adsorbed to the adsorption region 220 to form the contact layer 500 with a predetermined thickness or a predetermined structure.
It should be understood that the present disclosure is not limited to the electromagnetic circuit layers 211 in all transfer heads 200 in the transfer device being turned on to simultaneously access the electromagnetic signals. In specific implementation, the specific topography and topography of the micro led400 to be transferred in horizontal and/or vertical directions may be selectively turned on as needed to control the thickness or topography of the contact layer 500. Or, depending on the actual position or topography of the Micro LED400 to be transferred, a part or all of the electromagnetic circuit layers 211 in the transfer head 200 corresponding to the Micro LED400 to be transferred are selectively turned on or controlled.
As shown in fig. 4B, in step S2, the transferring device formed with the contact layer 500 obtained in step S1 is pressed toward the side of the second carrier substrate 120 carrying the Micro LED400 to a predetermined distance range, and the corresponding suction device 210 is controlled to be turned on. In this process, the transfer head 200 adsorbs the Micro LED400 to the contact layer 500 by using the adsorption effect of the adsorption device 210 on the Micro LED400, so that the Micro LED400 is in contact with the contact layer 500 and is held on the contact layer 500.
Similarly, it is not limited herein that the electromagnetic signal is connected to all the adsorption devices in all the transfer heads 200 or all the electrostatic circuit layers 221 in the transfer apparatus. In specific implementation, the Micro LEDs 400 to be transferred may be selectively turned on according to the horizontal arrangement and the specific topography and topography in the vertical height direction, so as to control the size of the adsorption region of the transfer device or the adsorption effect of the corresponding transfer head 200.
As shown in fig. 4C and 4D, controlling the transfer device having the Micro LEDs 400 absorbed thereon obtained in the step S2 to be adjacent to the third carrier substrate 130 having the preset mounting position, and aligning the Micro LEDs 400 held on the transfer device with the preset mounting position; then, the adsorption device 220 is controlled to release the Micro LEDs held on the transfer device to the preset mounting position.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The foregoing describes in detail a transfer apparatus and a transfer method provided in an embodiment of the present invention, and a specific example is applied in the description to explain the principle and the implementation of the present invention, and the description of the foregoing embodiment is only used to help understanding the technical solution and the core idea of the present invention; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (12)
1. A transfer device comprising a substrate and at least one transfer head disposed on said substrate, said transfer head comprising: a chucking device and a magnetic field generating device, wherein:
the adsorption device is arranged on one surface of the substrate and comprises an adsorption area on the surface which is far away from the substrate, and the adsorption device is at least used for: adsorbing Micro LEDs within a preset distance range to the adsorption area, or releasing the Micro LEDs;
The magnetic field generating device is disposed between the chucking device and the substrate and configured to generate a magnetic field at least for: adsorbing magnetic particles within a preset distance range on the adsorption zone to form a contact layer with a preset structure, so that the contact layer is in contact with the Micro LED adsorbed on the adsorption zone, or releasing the magnetic particles from the contact layer.
2. The transfer device of claim 1, wherein the magnetic field generating means comprises at least one electromagnetic circuit layer including a first dielectric layer and at least one electromagnetic coil coated on the first dielectric layer;
the electromagnetic coil is configured to receive an independent electromagnetic signal and generate a magnetic field in accordance with the electromagnetic signal.
3. The transfer apparatus according to claim 2, wherein each of said electromagnetic wiring layers in the magnetic field generating devices of two adjacent transfer heads are respectively layered and respectively continuous through said first dielectric layer to constitute a magnetic field generating device layer.
4. The transfer device of claim 2, wherein the first dielectric layer is SiNx、SiOxOr SiONxAt least one of (1).
5. The transfer device of claim 1, wherein the transfer device comprises a plurality of the transfer heads arranged in an array on the substrate;
the transfer device also comprises a plurality of blocking dams, and the blocking dams are arranged between the adjacent transfer heads and at least used for defining the adsorption areas of the transfer heads.
6. The transfer device of claim 1, wherein the adsorption means comprises at least one electrostatic circuit layer, the electrostatic circuit layer comprising:
the electrostatic electrode is arranged on one side of the magnetic field generating device, which is far away from the substrate; and the number of the first and second groups,
the second dielectric layer is arranged on one side of the electrostatic electrode, which is far away from the substrate, and covers the electrostatic electrode;
wherein each electrostatic electrode is configured to receive an independent electrostatic signal and generate an electrostatic force acting on the Micro LED according to the electric signal.
7. The transfer device according to claim 6, wherein the electrostatic circuit layer comprises two electrostatic electrodes disposed at intervals in the same layer, and the electrostatic electrodes are respectively configured with electrostatic signals of different polarities.
8. The transfer device of claim 6, wherein the material of the second dielectric layer is SiN x、SiOxOr SiONxAt least one of (1).
9. The transfer device of claim 1, wherein the magnetic particles are nanomagnetic particles comprising a magnetic core and an insulating shell, wherein:
the magnetic core is made of Fe2O3、Fe3O4At least one of Co or Ni;
the insulating shell is made of SiNxSiOx or SiONxAt least one of (1).
10. The transfer device of claim 1, wherein the magnetic particles range in size from 5nm to 10 um.
11. The transfer device of claim 1, wherein the contact layer has a thickness in the range of 100nm to 50 um.
12. A transfer method based on the transfer device according to any one of claims 1 to 11, characterized in that the transfer method comprises the steps of:
s1, starting the magnetic field generating device, enabling the transfer head to be close to the first bearing substrate loaded with the magnetic particles, enabling the transfer head to adsorb the magnetic particles, and forming a contact layer with a preset structure on the adsorption region;
s2, enabling the transfer head to be close to a second bearing substrate loaded with Micro LEDs, and starting an electric field unit to enable the Micro LEDs to be adsorbed on the contact layer;
S3, aligning the transfer head absorbed with the Micro LED to a preset position on a third substrate, and adjusting the electric field unit to release the Micro LED at the preset position; and the number of the first and second groups,
and S4, adjusting the magnetic field generating device to reset the magnetic particles and enter the next transfer operation.
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| CN202010691445.4A CN111863694B (en) | 2020-07-17 | 2020-07-17 | Transfer device and transfer method |
| PCT/CN2020/123250 WO2022011877A1 (en) | 2020-07-17 | 2020-10-23 | Transfer device and transfer method |
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| CN202010691445.4A CN111863694B (en) | 2020-07-17 | 2020-07-17 | Transfer device and transfer method |
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| CN112992765A (en) * | 2021-02-08 | 2021-06-18 | 厦门乾照半导体科技有限公司 | Transfer device and transfer method |
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| WO2022011877A1 (en) | 2022-01-20 |
| CN111863694B (en) | 2022-03-29 |
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