CN111128832B - Micro-component transfer device and method for manufacturing the same - Google Patents
Micro-component transfer device and method for manufacturing the same Download PDFInfo
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- CN111128832B CN111128832B CN201811290521.XA CN201811290521A CN111128832B CN 111128832 B CN111128832 B CN 111128832B CN 201811290521 A CN201811290521 A CN 201811290521A CN 111128832 B CN111128832 B CN 111128832B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Abstract
A transfer device of a micro component and a method of manufacturing the same are disclosed, wherein the transfer device includes a substrate, a metal wiring, and a plurality of silicon electrodes. The metal wiring is formed on the flat surface of the substrate and includes a plurality of electrode driving units. The silicon electrodes are formed on one side of the metal wiring opposite to the substrate, and each silicon electrode is arranged corresponding to one electrode driving unit and is driven by the electrode driving unit to pick up or release the micro-component. The transfer device that this application provided can realize a large amount of shifts of microelement through electrostatic absorption, promotes transfer efficiency greatly.
Description
Technical Field
The present disclosure relates to the field of micro-component related technologies, and in particular, to a micro-component transfer device and a method for manufacturing the same.
Background
In the devices used in daily life, the miniaturization of elements becomes one of the development trends, for example, the application of Micro light Emitting diodes (Micro-LEDs) in display devices, i.e. the integration of a plurality of Micro-sized Light Emitting Diodes (LEDs) on a display panel, becomes one of the development directions of current display technologies. Particularly, as micro light emitting diodes have very high light emitting efficiency and life, more and more enterprises begin to develop micro light emitting diode display panels, and micro light emitting diodes are expected to become the next generation display technology.
For the current manufacturing of micro light emitting diode display panels, due to the limitation of the manufacturing process, the efficient batch transfer of micro light emitting diodes cannot be realized.
Disclosure of Invention
The application provides a transfer device of micro-components and a manufacturing method thereof, which are used for solving the problem that the batch transfer of the micro-components cannot be realized in the prior art.
In order to solve the above technical problems, the present application provides a transfer device for micro-components. The transfer device includes: a substrate, metal wiring, and a plurality of silicon electrodes. The substrate includes a planar surface; and a metal wiring formed on the flat surface of the substrate and including a plurality of electrode driving units. And the silicon electrodes are formed on one side of the metal wiring opposite to the substrate, and each silicon electrode is arranged corresponding to one electrode driving unit and is driven by the electrode driving unit to pick up or release the micro-component.
The metal wiring comprises an adhesion metal layer and a bonding metal layer which are sequentially stacked on the substrate, and the silicon electrode is formed on one side, back to the substrate, of the bonding metal layer.
The electrode driving unit comprises an electrode bonding area and a driving lead area; the silicon electrode is formed on a side of the electrode bonding region opposite the substrate.
The plurality of electrode driving units are arranged in an array, and the plurality of silicon electrodes are arranged in an array.
Wherein the metal wiring further includes a driving connection pad connected to the plurality of electrode driving units; the driving connecting sheet is used for connecting with an external circuit, so that the external circuit controls the electrode driving unit through the driving connecting sheet.
Wherein, a dielectric layer is laid on the surface of the silicon electrode.
Wherein the silicon electrode is a low-resistance silicon electrode.
In order to solve the above technical problems, the present application provides a method for manufacturing a micro device transfer apparatus. The manufacturing method comprises the following steps: a substrate is provided, the substrate including a planar surface. A metal wiring including a plurality of electrode driving units is formed on a flat surface of a substrate. A plurality of silicon electrodes are formed on the metal wiring, each of the silicon electrodes being disposed corresponding to one of the electrode driving units.
Wherein forming a plurality of silicon electrodes on the metal wiring includes: depositing a silicon electrode layer on the metal wiring; the silicon electrode layer is patterned to form a plurality of silicon electrodes.
Wherein forming a plurality of silicon electrodes on the metal wiring includes: providing a silicon wafer, wherein the silicon wafer comprises a substrate layer and top silicon; patterning the top layer silicon to form a plurality of silicon electrodes; a silicon wafer on which a plurality of silicon electrodes are formed is bonded to a substrate on which metal wirings are formed, so that the silicon electrodes are formed on the metal wirings.
A micro-component transfer device includes a substrate, a metal wiring, and a plurality of silicon electrodes. And a metal wiring formed on the surface of the substrate and including a plurality of electrode driving units. And the silicon electrodes are formed on one side of the metal wiring opposite to the substrate, and each silicon electrode is arranged corresponding to one electrode driving unit and is driven by the electrode driving unit to pick up or release the micro-component. The transfer device of the application adopts the electrostatic adsorption micro-element to realize mass transfer of the micro-element, and transfer efficiency is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of an embodiment of a micro-component transfer device according to the present application;
FIG. 2 is a schematic structural diagram of another embodiment of a micro-component transfer device according to the present application;
FIG. 3 is a schematic diagram of a structure of an electrode driving unit in the embodiment of the micro-component transfer apparatus shown in FIG. 2;
FIG. 4 is a schematic view of another structure of an electrode driving unit in the embodiment of the micro-component transfer apparatus shown in FIG. 2;
FIG. 5 is a schematic flow chart illustrating one embodiment of a method for manufacturing a micro-component transfer device according to the present application;
FIG. 6 is a schematic flow chart of one embodiment of forming a plurality of silicon electrodes on metal wires in the fabrication method shown in FIG. 5;
FIG. 7 is a schematic process diagram of one embodiment of the manufacturing method shown in FIG. 6;
FIG. 8 is a schematic flow chart of another embodiment of forming a plurality of silicon electrodes on metal wires in the fabrication method shown in FIG. 5;
FIG. 9 is a schematic process diagram of one embodiment of the manufacturing method shown in FIG. 8.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present application, the present invention provides a transfer device of micro-components and a method for manufacturing the same, which is described in further detail below with reference to the accompanying drawings and the detailed description.
The transfer device is used for transferring micro elements, and by taking a micro light-emitting diode display panel as an example, the transfer device can be used for selectively transferring the micro light-emitting diodes in batches. Other micro elements with the same micro characteristics as the micro light-emitting diode can be selectively transferred in batches by adopting the transfer device. The micro light emitting diode, that is, the micro device described in this application, is used to realize self-luminescence of pixels in a display panel, and one micro device is used as one pixel. Generally, the micro-components are firstly spread on a growth substrate, and then the micro-components are transferred to a driving substrate by the growth substrate to form a display panel.
Specifically, please refer to fig. 1 for a transfer device of the present application, wherein fig. 1 is a schematic structural diagram of an embodiment of a micro-component transfer device of the present application. The micro-component transfer device 100 of the present embodiment includes a substrate 11, metal wirings 12, and a plurality of silicon electrodes 13.
The substrate 11 serves as a carrier for the metal wiring 12 and the silicon electrode 13 for electrostatic transfer, and the selected material may be a transparent or non-transparent material such as silicon or Pyrex glass. The substrate 11 is a flat structure, the surface of which the metal wiring is disposed is a flat surface 111, and the metal wiring 12 includes a plurality of electrode driving units formed on the flat surface 111 of the substrate 11. That is, by forming the metal wiring 12 on the flat surface 111 of the substrate 11 to form a plurality of electrode driving units, since the metal wiring 12 is formed on the flat surface 111 and is also formed as a flat layer, the metal wiring 12 formed on a plane in the present embodiment can be more miniaturized than that formed on a concave-convex surface. The metal wiring 12 constitutes an electrical transmission circuit, and individual driving of each electrode can be realized.
Further, the silicon electrode 13 is formed directly on the flat metal wiring 12, and a high electrostatic electrode can be provided, so that an electrostatic force of a certain strength is generated to the micro-component, and the electrostatic force of a certain height has a small influence on the electrostatic attraction of the adjacent micro-component. In the case of forming the metal wiring on the uneven structure to constitute the electrostatic electrode, the uneven structure cannot be too high, which is disadvantageous for the metal wiring. Therefore, the silicon electrode adopted in the embodiment has the advantages of simple structure and process, and is more efficient and stable in the adsorption of the micro-element. Further, the transfer device of the present embodiment constitutes an electrode driving unit by metal wiring to control each silicon electrode, which forms electrostatic attraction force to pick up a micro component when a voltage is applied to the metal wiring, that is, to the electrode driving unit. Each electrode driving unit of the transfer device of the present embodiment can be controlled individually, i.e. each silicon electrode can be driven independently, which in turn enables selective picking up or releasing of microcomponents.
Based on the embodiment of the transfer device shown in fig. 1, the present application further proposes another embodiment, and referring to fig. 2, fig. 2 is a schematic structural diagram of another embodiment of the transfer device of the present application. The transfer device 200 includes a substrate 21, metal wirings 22, a plurality of silicon electrodes 23, an insulating layer 24, and a dielectric layer 25. The description of the embodiment shown in fig. 1 can be applied to the embodiment shown in fig. 2, and is not repeated herein.
In the embodiment, the thickness of the substrate 21 is 250 to 1000 μm, a flat insulating layer 24 is further formed on the surface of the substrate, the metal wire 22 is formed on the surface of the insulating layer 24, and the insulating layer 24 may be formed by depositing a material such as silicon oxide, silicon nitride, or aluminum trioxide, so as to facilitate the deposition of the metal wire 22 and prevent the substrate 21 of a silicon material from affecting the metal wire 22. The thickness of the insulating layer 24 may be 0.1 to 3 μm.
The metal wire 22 may be made of a single layer metal, and specifically, a microelectronic metal material, such as Cr, Cu, Au, Ni, W, Mo, Ti, TiN, etc., may have a thickness of 0.1 to 1 μm. The metal wiring 22 may also be formed using a multilayer metal fabrication. For example, in the embodiment, the metal wire 22 includes an adhesion metal layer and a bonding metal layer stacked on the substrate in sequence, wherein the adhesion metal layer is made of metal such as Ti, TiN, etc. that easily adheres to the insulating layer 24, and has a thickness of 0.1 to 1 μm, and the bonding metal layer is made of material such as Au that easily bonds with a silicon electrode, and has a thickness of 0.1 to 2 μm. A silicon electrode 23 is also formed on the side of the bonding metal layer facing away from the substrate 21.
The silicon electrode 23 is formed on the side of the bonding metal layer facing away from the substrate. The silicon electrode 23 may be a single electrode or a double electrode, and the metal wiring 22 is designed differently for different types of electrodes, i.e., the electrode driving unit 221 is formed to have a different structure accordingly.
Referring to fig. 3 and 4, fig. 3 is a schematic structural diagram of an electrode driving unit in the embodiment of the micro-component transferring device shown in fig. 2, and fig. 4 is a schematic structural diagram of an electrode driving unit in the embodiment of the micro-component transferring device shown in fig. 2.
The electrode driving unit structures of fig. 3 and 4 correspond to a single electrode and a dual electrode, respectively, and the electrode driving unit 221 of fig. 3 includes a driving lead region 2211 and an electrode bonding region 2212; while the electrode driving unit 221 of fig. 4 includes two electrode driving lines 2211 and two electrode bonding areas 2212.
Wherein the driving lead regions 2211 are used for connecting to driving lines and the electrode bonding regions 2212 are used for connecting to silicon electrodes 23, in this embodiment, the adhesion metal layer mainly constitutes the driving lead regions 2211 and the bonding metal layer mainly constitutes the electrode bonding regions 2212. The silicon electrode 23 is formed on a side of the electrode bonding region 2212 opposite the substrate 21.
For the micro light emitting diodes arranged in an array in the similar micro light emitting diode display panel, the present application also correspondingly adopts the design of the array arrangement for the transfer of the micro elements arranged in the array, that is, the plurality of electrode driving units 221 in the metal wiring 22 adopt the array arrangement, and the silicon electrodes 23 formed on the metal wiring 22 also adopt the array arrangement.
In order to realize the electric driving of the electrode driving units 221, the metal wiring 22 is further formed to include a driving connection pad 222, and the driving connection pad 222 is connected between the plurality of electrode driving units 221 and an external circuit, so that the external circuit controls the electrode driving units 221 through the driving connection pad 222.
In this embodiment, a dielectric layer 25 is further disposed on the surface of the silicon electrode 23 to effectively prevent charges from escaping. The material of the insulating layer 24 and the dielectric layer 25 may be the same, simplifying the manufacturing process. The materials can adopt insulating media such as silicon dioxide, silicon nitride, aluminum oxide and the like, and the thickness is set to be 0.1-2 mu m. In addition, the silicon electrode 23 can be made of low-resistance silicon, and has better conductivity.
In the embodiment, the metal wiring of the mobile device is further improved, all the metal wiring is arranged on the surface of the flat insulating layer, each silicon electrode can be independently controlled, and the manufacturing of the process is facilitated.
Because the volume of the Micro-component is very small, the silicon electrode of the transfer device is also designed to be very small, and the Micro-component transfer device is mainly manufactured by utilizing a Micro-Electro-Mechanical System (MEMS) process. MEMS refers to high-tech devices with dimensions of several millimeters or even smaller, and the internal structure is usually in the order of micrometers or even nanometers, and is an independent intelligent system.
Referring to fig. 5, fig. 5 is a schematic flow chart of an embodiment of a method for manufacturing a micro device transfer apparatus according to the present application.
S11: a substrate is provided.
In this embodiment, a single crystal silicon wafer can be selected as the substrate, and the thickness of the single crystal silicon wafer is 250 to 1000 μm.
S12: an insulating layer is formed on the flat surface of the substrate.
An insulating layer is formed on a flat surface of the substrate, and the insulating layer can be formed by selectively depositing insulating materials such as silicon dioxide or silicon nitride, and the thickness of the insulating layer can be selected to be 0.1-3 μm.
S13: and forming a metal wiring on the surface of the insulating layer, wherein the metal wiring comprises a plurality of electrode driving units.
In this embodiment, a sputtering process may be used to complete the fabrication of the metal wiring, and the metal wiring may be a single layer metal or a multi-layer metal corresponding to the above embodiments. Taking two layers of metal as an example, a metal layer can be sputtered and adhered on the surface of the insulating layer to be used as wiring metal, the material can be Ti and TiN, and the thickness is 0.1-2 microns; and then, forming a bonding metal layer by a sputtering process, wherein the material can be Au, and the thickness is 0.1-2 microns. And finally, photoetching and corroding to pattern metal wiring to form an electrode driving unit and a driving connecting sheet.
S14: a plurality of silicon electrodes are formed on the metal wiring, each of the silicon electrodes being disposed corresponding to one of the electrode driving units.
The formation of the silicon electrode in step S14 can be accomplished by a variety of processes. Referring to fig. 6 and 7, fig. 6 is a schematic flow chart of an embodiment of forming a plurality of silicon electrodes on metal wires in the manufacturing method shown in fig. 5, and fig. 7 is a schematic process diagram of an embodiment of the manufacturing method shown in fig. 6.
S141: and depositing a silicon electrode layer on the metal wiring.
The silicon electrode layer may be formed by Deposition on the metal wiring and the substrate by Chemical Vapor Deposition (CVD) or ion implantation, and particularly, low-resistance silicon may be used.
S143: the silicon electrode layer is patterned to form a plurality of silicon electrodes.
The silicon electrode layer 20 may be etched using photolithography to finally form a patterned bumped silicon electrode corresponding to the electrode driving unit.
The method mainly adopts deposition and etching processes to complete the silicon electrode structure, and the process is simple.
Next, referring to fig. 8 and 9, fig. 8 is a schematic flow chart of another embodiment of forming a plurality of silicon electrodes on metal wires in the manufacturing method shown in fig. 5. FIG. 9 is a schematic process diagram of one embodiment of the manufacturing method shown in FIG. 8.
S142: a silicon wafer is provided, which comprises a substrate layer and a top layer silicon.
The silicon wafer 30 may be selected from a silicon-on-insulator (SOI) material, which specifically includes a top silicon layer and a substrate layer with a buried oxide layer therebetween. The silicon chip with the structure reduces parasitic capacitance and has lower power consumption. The thickness of the top layer silicon is selected to be 1-100 microns, and the resistivity is less than 1 ohm per centimeter.
S144: the top layer silicon is patterned to form a plurality of silicon electrodes.
And etching the top silicon layer to form a plurality of silicon electrodes, wherein the etching depth is 1-100 microns, and the etching depth is finally used as the height of the obtained silicon electrodes.
S146: a silicon wafer on which a plurality of silicon electrodes are formed is bonded to a substrate on which metal wirings are formed, so that the silicon electrodes are formed on the metal wirings.
The silicon wafer 30 and the substrate are wafer bonded, for example, if the bonding metal of the metal wiring on the substrate is gold, the step can be completed by a bonding method such as gold-silicon eutectic bonding. The substrate layer and the buried oxide layer of the silicon wafer 30 are then removed by an etching process to finally form a bumped silicon electrode on the substrate.
In the embodiment, the silicon electrode is manufactured mainly through wafer bonding and etching processes, and the process is simple.
After step S14 is completed, further, step S15 is performed in this embodiment.
S15: a dielectric layer is laid on the surface of the silicon electrode, and drive connection pads are formed on the transfer device.
A dielectric layer is paved on the surface of the silicon electrode, in the embodiment, dense aluminum oxide can be grown through atomic layer deposition, and the thickness can be 0.1-2 microns. Alumina is a compound with high hardness, has no conductivity, and is an insulating medium with protective effect. Finally, a portion of the dielectric layer may be etched using photolithography to expose a portion of the metal wiring as a drive pad that can be connected to external circuitry.
The embodiment discloses a manufacturing method of a micro-element transfer device, which is simple to operate, simple in process, easy to manufacture in large batch in actual production and high in practicability and usability.
The above description is only for the purpose of illustrating embodiments of the present application and is not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes, which are made by the contents of the specification and the drawings of the present application or are directly or indirectly applied to other related technical fields, are also included in the scope of the present application.
Claims (8)
1. A transfer device for microcomponents, comprising:
a substrate including a flat surface formed with an insulating layer;
a metal wiring formed on the insulating layer of the flat surface of the substrate, including a plurality of electrode driving units;
a plurality of silicon electrodes formed on a side of the metal wiring opposite to the substrate, each of the silicon electrodes being disposed corresponding to one of the electrode driving units and driven by the electrode driving unit to pick up or release the micro-component;
the metal wiring comprises an adhesion metal layer and a bonding metal layer which are sequentially stacked on the insulating layer, and the silicon electrode is formed on one side, back to the substrate, of the bonding metal layer; wherein the silicon electrode is wafer bonded with the bonding metal layer;
the electrode driving unit comprises an electrode bonding area and a driving lead area; the silicon electrode is formed on a side of the electrode bonding region opposite the substrate, wherein the adhesion metal layer forms the drive wire region and the bonding metal layer forms the electrode bonding region.
2. The transfer device of claim 1, wherein the plurality of electrode drive units are arranged in an array and the plurality of silicon electrodes are arranged in an array.
3. The transfer device of claim 1, wherein the metal wiring further comprises a drive connection pad connected to the plurality of electrode drive units; the driving connecting sheet is used for being connected with an external circuit, so that the external circuit controls the electrode driving unit through the driving connecting sheet.
4. A transfer device according to claim 1, wherein the surface of the silicon electrode is provided with a dielectric layer.
5. The transfer device of claim 1 wherein the silicon electrode is a low resistance silicon electrode.
6. A method of manufacturing a micro-component transfer device, the method comprising:
providing a substrate, wherein the substrate comprises a flat surface, and an insulating layer is formed on the flat surface;
forming a metal wiring on an insulating layer of a flat surface of the substrate, the metal wiring including a plurality of electrode driving units;
forming a plurality of silicon electrodes on the metal wiring, each silicon electrode being disposed corresponding to an electrode driving unit;
an adhesion metal layer and a bonding metal layer which are sequentially laminated on the insulating layer on the metal wiring, wherein the silicon electrode is formed on one side of the bonding metal layer, which faces away from the substrate; wherein the silicon electrode is wafer bonded with the bonding metal layer;
the electrode driving unit comprises an electrode bonding area and a driving lead area; the silicon electrode is formed on a side of the electrode bonding region opposite the substrate, wherein the adhesion metal layer forms the drive wire region and the bonding metal layer forms the electrode bonding region.
7. The method of manufacturing of claim 6, wherein the forming a plurality of silicon electrodes on the metal wiring comprises:
depositing a silicon electrode layer on the metal wiring;
the silicon electrode layer is patterned to form the plurality of silicon electrodes.
8. The method of manufacturing of claim 6, wherein the forming a plurality of silicon electrodes on the metal wiring comprises:
providing a silicon wafer, wherein the silicon wafer comprises a substrate layer and a top layer;
patterning the top layer silicon to form the plurality of silicon electrodes;
and bonding a silicon wafer on which a plurality of the silicon electrodes are formed with a substrate on which metal wirings are formed, so that the silicon electrodes are formed on the metal wirings.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811290521.XA CN111128832B (en) | 2018-10-31 | 2018-10-31 | Micro-component transfer device and method for manufacturing the same |
| KR1020217016394A KR102518916B1 (en) | 2018-10-31 | 2019-02-18 | micro device transfer device |
| PCT/CN2019/075410 WO2020087801A1 (en) | 2018-10-31 | 2019-02-18 | Micro-component transfer device and manufacturing method therefor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811290521.XA CN111128832B (en) | 2018-10-31 | 2018-10-31 | Micro-component transfer device and method for manufacturing the same |
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| CN111128832A CN111128832A (en) | 2020-05-08 |
| CN111128832B true CN111128832B (en) | 2021-10-22 |
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| KR (1) | KR102518916B1 (en) |
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| CN111129235B (en) * | 2018-10-31 | 2021-10-22 | 成都辰显光电有限公司 | Batch transfer method of micro-elements |
| CN111613699B (en) * | 2020-05-25 | 2021-06-01 | 深圳市华星光电半导体显示技术有限公司 | Micro light-emitting diode and manufacturing method thereof |
| CN111725125B (en) * | 2020-06-11 | 2023-07-04 | 深圳市华星光电半导体显示技术有限公司 | Microarray adsorption substrate, driving circuit and display device |
| CN113830727A (en) * | 2021-09-09 | 2021-12-24 | 中国人民解放军军事科学院国防科技创新研究院 | Micro-nano part transfer method |
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| US8333860B1 (en) * | 2011-11-18 | 2012-12-18 | LuxVue Technology Corporation | Method of transferring a micro device |
| US9105492B2 (en) * | 2012-05-08 | 2015-08-11 | LuxVue Technology Corporation | Compliant micro device transfer head |
| US9034754B2 (en) * | 2012-05-25 | 2015-05-19 | LuxVue Technology Corporation | Method of forming a micro device transfer head with silicon electrode |
| US8415771B1 (en) * | 2012-05-25 | 2013-04-09 | LuxVue Technology Corporation | Micro device transfer head with silicon electrode |
| WO2014008110A1 (en) * | 2012-07-06 | 2014-01-09 | LuxVue Technology Corporation | Compliant bipolar micro device transfer head with silicon electrodes |
| US9136161B2 (en) * | 2013-06-04 | 2015-09-15 | LuxVue Technology Corporation | Micro pick up array with compliant contact |
| US20170215280A1 (en) * | 2016-01-21 | 2017-07-27 | Vuereal Inc. | Selective transfer of micro devices |
| CN106229287B (en) * | 2016-09-30 | 2019-04-05 | 厦门市三安光电科技有限公司 | For shifting the transposition head of microcomponent and the transfer method of microcomponent |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105576088A (en) * | 2015-11-06 | 2016-05-11 | 友达光电股份有限公司 | Method for transposing micro-components |
| CN107039298A (en) * | 2016-11-04 | 2017-08-11 | 厦门市三安光电科技有限公司 | Transfer device, transfer method, manufacture method, device and the electronic equipment of microcomponent |
| CN107863316A (en) * | 2017-11-06 | 2018-03-30 | 上海天马微电子有限公司 | Micro LED transporters, conveyer method and preparation method thereof |
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| CN111128832A (en) | 2020-05-08 |
| KR20210072109A (en) | 2021-06-16 |
| WO2020087801A1 (en) | 2020-05-07 |
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